CN102916137A - Packaging structure and packaging method of organic electroluminescence device - Google Patents
Packaging structure and packaging method of organic electroluminescence device Download PDFInfo
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- CN102916137A CN102916137A CN201210435587XA CN201210435587A CN102916137A CN 102916137 A CN102916137 A CN 102916137A CN 201210435587X A CN201210435587X A CN 201210435587XA CN 201210435587 A CN201210435587 A CN 201210435587A CN 102916137 A CN102916137 A CN 102916137A
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Abstract
The invention discloses a packaging structure and method of an organic electroluminescence device. Low-smelting-point indium and indium alloy are used for packaging a substrate and a cover plate of the organic electroluminescence device; a resistor heating layer is arranged below an indium packaging layer of the substrate; and in a packaging process, when current flows through the resistor heating layer, the resistor heating layer generates heat so that the indium packaging layer is heated to smelt the indium or the indium alloy, this finishing the packaging of the substrate and a panel of the organic electroluminescence device. According to the packaging structure and method of the organic electroluminescence device, a heating part is limited to a packaging part of the edge of the organic electroluminescence device in the indium packaging process, so as to avoid performance reduction or efficiency loss of a light emitting material, which is caused by that the temperature rise of theorganic light emitting material in the middle of the organic electroluminescence device is too high.
Description
Technical field
The invention belongs to the encapsulation technology field of organic electro-optic device, be specifically related to a kind of encapsulating structure and method for packing of organic electroluminescence device.
Background technology
Organic electroluminescence device (OLED) has that active illuminating, brightness are high, full color shows, driving voltage is low, thickness of detector is thin, can realize the characteristics such as flexible demonstration, having a good application prospect aspect large screen flat plate display and the flexible display.
Luminous organic material in the organic electroluminescence device is very responsive to steam and oxygen, and seldom steam and the oxygen of amount just can damage luminous organic material, make the luminescent properties of device deteriorated.Therefore, guarantee that device has the useful life that can satisfy commercial application, steam and oxygen should be lower than 10 to the permeability of the encapsulating material of device
-6G/m
2The level of/day.
The substrate of conventional package organic electroluminescence device and the seal, sealing materials between the cover plate, in majority is used, adopt ultra-violet curing epoxy resin (also claiming UV glue), its shortcoming is poor to the barrier property of water and oxygen, and for example water is that 1 millimeter ultra-violet curing epoxy resin and the permeability of heat-curable epoxy resin thin slice are 10 to thickness
0～10
-1G/m
2/ day magnitude can not satisfy the encapsulation requirement of long-life organic electroluminescence device.
In order to solve the encapsulation problem of long-life organic electroluminescence device, can adopt low-melting-point metal, carry out heat-sealable such as indium and indium alloy as the encapsulating material of device.In the relevant patent of existing indium sealing-in, the method that when adopting sealing-in whole device is heated is finished sealing-in between panel and cover plate with fusing indium sealing layer.The shortcoming of this method is to cause the temperature of device middle part luminous organic material the same high with the temperature at device edge sealing-in position, and the luminous organic material that can not bear higher temperature is damaged.And sealing temperature is excessively low, can cause again the fusing of indium or indium alloy not enough, can not form fine and close indium sealing layer, causes sealing layer gas leakage.
Summary of the invention
The too high problem of device middle part luminous organic material temperature rise when solving the sealing-in of organic luminescent device indium.
The present invention adopts following technical scheme: a kind of encapsulating structure of organic electroluminescence device, comprise substrate, cover plate and sealing layer, and it is characterized in that: also comprise for the built-in resistance heating layer to the sealing layer heating.
Be provided with the ITO electrode layer on the substrate described in the present invention, be provided with the ITO electrode dielectric layer on the sealing region of ITO electrode layer, the sealing layer top and bottom are provided with transition zone, and the transition zone lower surface of substrate one side arranges resistance heating layer, and described resistance heating layer surface is coated with insulating barrier.
Resistance heating layer described in the present invention ringwise, its width, thickness and material are all identical, and two resistance heating layer equal in length of drawing between the line end of resistance heating layer.Equal to guarantee by the electric current on each limit of resistance heating layer, the heating power of unit are is consistent on the resistance heating layer, thus sealing layer temperature uniformity everywhere when guaranteeing sealing-in
The material of the substrate described in the present invention and cover plate can be glass, metal or mica.
The material of the ITO electrode dielectric layer described in the present invention and insulating barrier is Al
2O
3Or SiO
2, its thickness is 0.2～10 μ m, the wide 1～2mm of the width of its Width resistance heating layer.
The material of resistance heating layer of the present invention is nichrome, and its composition is that nickel is 80%, and chromium is 20%; The material of resistance heating layer is the available iron Cr-Al alloy also, and its composition is that chromium is 12%～28%, and aluminium is 4%～7%, and iron is 84%～65%.The thickness of resistance heating layer is 1～10 μ m, and width is identical with sealing layer.
The material of the transition zone described in the present invention is a kind of in Au, Ag, Pt or the AgCu alloy; The composition of AgCu alloy is that silver is 5%～45%, and surplus is copper.The thickness of transition zone is 0.1～50 μ m, the wide 0.5～1mm of the width of Width sealing layer.
The material of sealing layer described in the present invention is a kind of in indium, indium stannum alloy or the indium bismuth alloy, and the composition of indium stannum alloy is: indium 40～60%, tin 60～40%.The composition of indium bismuth alloy is: indium 60～70%, bismuth 40～30%.The thickness of sealing layer is 1～50 μ m, and the sealing layer width is 0.5～3mm.
The present invention also provides a kind of method for packing of encapsulating structure of organic electroluminescence device, may further comprise the steps:
(1) before substrate is coated with organic luminous layer and cathode layer; in atmosphere or protective gas atmosphere; use hot cladding process or print process; apply sealing layer on the transition zone surface of substrate and cover plate respectively; material is indium or indium stannum alloy or indium bismuth alloy; its thickness is 1～50 μ m, and particularly preferred thickness is 2～10 μ m, and width is 0.5～3mm.
(2) substrate that has applied sealing layer and cover plate are placed in the heatable container, are heated to above 10～20 ℃ of sealing layer melting temperatures, sealing layer is fully melted, and form good infiltration and combination with transition zone.
(3) be coated with organic luminous layer and cathode layer at substrate.
(4) in the protective gas atmosphere, the sealing layer of substrate is placed on the platform up, the sealing layer alignment and congruence of substrate and cover plate, on the cover board places a weight, and making the pressure between cover plate sealing layer and the substrate sealing layer is 1～2kg/cm
2
(5) under protective gas atmosphere; draw line end for two at resistance heating layer; connect direct current or AC power that an output voltage or output current can be regulated; the electric current that the regulating resistance zone of heating passes through; make the temperature of indium sealing layer be higher than 10～20 ℃ of sealing layer melting temperatures, the sealing-in of completing substrate and cover plate.
Among the present invention, when described sealing-in substrate and cover plate, the kind of protective gas is a kind of of nitrogen or inert gas, and purity is 99.99%～99.999%.
The present invention compared with prior art has following beneficial effect:
Only the sealing layer to the device edge position heats in organic light-emitting device sealing-in process, it is temperature required to sealing-in effectively to heat the indium sealing layer, can avoid again causing it to damage to the luminous organic material heating-up temperature at device middle part is too high, can effectively improve the yields of sealing-in.
Description of drawings
Fig. 1 is the structural representation of encapsulating structure of the present invention;
Fig. 2 is plan structure schematic diagram of the present invention.
Wherein, 1 substrate, 2 cover plates, the 3ITO electrode layer, 4, the ITO electrode dielectric layer, 5 resistance heating layers, 6 insulating barriers, 7 transition zones, 8 sealing layers, 15 organic luminous layers and cathode layer, 16 draw line end.
Embodiment
The invention will be further described below in conjunction with the drawings and the specific embodiments.
As depicted in figs. 1 and 2, the encapsulating structure of organic electroluminescence device comprises substrate 1, cover plate 2 and sealing layer 8, also comprises for the built-in resistance heating layer 5 to sealing layer 8 heating.
Be provided with ITO electrode layer 3 on the described substrate 1, be provided with ITO electrode dielectric layer 4 on the sealing region of ITO electrode layer 3, sealing layer 8 top and bottom are provided with transition zone 8, and transition zone 7 lower surfaces of substrate 1 one sides arrange resistance heating layer 5, and described resistance heating layer 5 surfaces are coated with insulating barrier 6.
The thickness of described resistance heating layer 5 is 1～10 μ m, and width is identical with sealing layer 8, and its material is nichrome or Aludirome, and the composition of described nichrome is that nickel is 80%, chromium is 20%; The composition of described Aludirome is that chromium is 12%～28%, aluminium is 4%～7%, iron is 84%～65%.
Described resistance heating layer 5 ringwise, its width, thickness and material are all identical, and resistance heating layer 5 equal in length between two exits of resistance heating layer 5.
The material of described substrate 1 and cover plate 2 is glass, metal or mica.
The material of described ITO electrode dielectric layer 4 and insulating barrier 6 is Al
2O
3Or SiO
2, its thickness is 0.2～10 μ m, the wide 1～2mm of the width of its Width resistance heating layer 5.
The material of described transition zone 7 is a kind of in Au, Ag, Pt or the AgCu alloy; The composition of AgCu alloy is that silver is 5%～45%, and surplus is copper; The thickness of transition zone 7 is 0.1～50 μ m, the wide 0.5～1mm of the width of Width sealing layer 8.
The material of described sealing layer 8 is a kind of in indium, indium stannum alloy or the indium bismuth alloy, and the composition of indium stannum alloy is: indium 40～60%, tin 60～40%; The composition of indium bismuth alloy is: indium 60～70%, bismuth 40～30%; The thickness of sealing layer 8 is 1～50 μ m, and width is 0.5～3mm.
The preparation process of the encapsulating structure of embodiment 1 organic electroluminescence device
Step (1): use the magnetically controlled DC sputtering coating method, at substrate 1 preparation ITO electrode layer 3;
Step (2): use the rf magnetron sputtering coating method, at the sealing region preparation ITO of ITO electrode layer 3 electrode dielectric layer 4;
Step (3): deposited by electron beam evaporation method or vacuum vapor deposition method, at the sealing region place of substrate 1 and cover plate 2 frames, preparation transition zone 7;
Step (4): with hot cladding process or print process, on transition zone 7 surfaces of substrate 1 and cover plate 2, apply respectively sealing layer 8;
Step (5): substrate 1 and the cover plate 2 that will apply sealing layer 8 are put into a heating chamber, to substrate 1 and cover plate 2 heating; Heating-up temperature is up to above 10-20 ℃ of sealing layer 8 fusing point, makes the fully infiltration and bonding of sealing layer and transition zone surface, then cools to room temperature, and substrate 1 and cover plate 2 are taken out in heating chamber.
Step (6): adopt vacuum evaporatation, at substrate 1 preparation organic luminous layer 15 and cathode layer.
The encapsulation step of embodiment 2 organic electroluminescence devices
Step (1): under vacuum environment, substrate 1 and cover plate 2 are transplanted in the glove box that is in vacuum, then this glove box is filled with high pure nitrogen or high purity inert gas; The sealing layer of substrate 1 and cover plate 2 face-to-face alignment overlay on the platform in the glove box, press a weight at the substrate 1 that stacks and lid 2 plates; The pressure that the weight of this weight will reach on sealing layer 8 contact-making surfaces that make substrate 1 and cover plate 2 is 1-2kg/cm
2
Step (2): draw line end 16 two of resistance heating layer 5 and connect direct current or the AC power that an output voltage or output current can be regulated, be adjusted in the electric current that flows through in the resistance heating layer, make the temperature of sealing layer 8 reach the temperature of above 10-20 ℃ of sealing layer 8 melting temperature, then be incubated 20-30 minute, make sealing layer 8 fusings and fusion between substrate 1 and the cover plate 2.
Step (3): stopped heating resistance heating layer 5, after sealing layer 8 temperature of device are reduced to room temperature, take out the organic luminescent device that sealing-in is finished from glove box.
Claims (10)
1. the encapsulating structure of organic electroluminescence device comprises substrate, cover plate and sealing layer, it is characterized in that: also comprise for the built-in resistance heating layer to the sealing layer heating.
2. the encapsulating structure of organic electroluminescence device according to claim 1, it is characterized in that: be provided with the ITO electrode layer on the described substrate, be provided with the ITO electrode dielectric layer on the sealing region of ITO electrode layer, the sealing layer top and bottom are provided with transition zone, the transition zone lower surface of substrate one side arranges resistance heating layer, and described resistance heating layer surface is coated with insulating barrier.
3. the encapsulating structure of organic electroluminescence device according to claim 2, it is characterized in that: the thickness of described resistance heating layer is 1～10 μ m, width is identical with sealing layer, and its material is nichrome or Aludirome, and the composition of described nichrome is that nickel is 80%, chromium is 20%; The composition of described Aludirome is that chromium is 12%～28%, aluminium is 4%～7%, iron is 84%～65%.
4. the encapsulating structure of organic electroluminescence device according to claim 2 is characterized in that: described resistance heating layer ringwise, its width, thickness and material are all identical, and two resistance heating layer equal in length of drawing between the line end of resistance heating layer.
5. the encapsulating structure of organic electroluminescence device according to claim 2, it is characterized in that: the material of described substrate and cover plate is glass, metal or mica.
6. the encapsulating structure of organic electroluminescence device according to claim 2, it is characterized in that: the material of described ITO electrode dielectric layer and insulating barrier is Al
2O
3Or SiO
2, its thickness is 0.2～10 μ m, the wide 1～2mm of the width of its Width resistance heating layer.
7. the encapsulating structure of organic electroluminescence device according to claim 2 is characterized in that: the material of described transition zone is a kind of in Au, Ag, Pt or the AgCu alloy; The composition of AgCu alloy is that silver is 5%～45%, and surplus is copper; The thickness of transition zone is 0.1～50 μ m, the wide 0.5～1mm of the width of Width sealing layer.
8. the encapsulating structure of organic electroluminescence device according to claim 2 is characterized in that: the material of described sealing layer is a kind of in indium, indium stannum alloy or the indium bismuth alloy, and the composition of indium stannum alloy is: indium 40～60%, tin 60～40%; The composition of indium bismuth alloy is: indium 60～70%, bismuth 40～30%; The thickness of sealing layer is 1～50 μ m, and the sealing layer width is 1～3mm.
9. the method for packing of the encapsulating structure of each described organic electroluminescence device is characterized in that according to claim 1～8, may further comprise the steps:
(1) before substrate is coated with organic luminous layer and cathode layer; in atmosphere or protective gas atmosphere; use hot cladding process or print process; apply sealing layer on the transition zone surface of substrate and cover plate respectively; material is indium or indium stannum alloy or indium bismuth alloy; its thickness is 1～50 μ m, and width is 0.5～3mm.
(2) substrate that has applied sealing layer and cover plate are placed in the heatable container, are heated to above 10～20 ℃ of sealing layer melting temperatures, sealing layer is fully melted, and form good infiltration and combination with transition zone;
(3) be coated with organic luminous layer and cathode layer at substrate;
(4) in the protective gas atmosphere, the sealing layer of substrate is placed on the platform up, the sealing layer alignment and congruence of substrate and cover plate, on the cover board places a weight, and making the pressure between cover plate sealing layer and the substrate sealing layer is 1～2kg/cm
2
(5) under protective gas atmosphere; draw line end for two at resistance heating layer; connect direct current or AC power that an output voltage or output current can be regulated; the electric current that the regulating resistance zone of heating passes through; make the temperature of indium sealing layer be higher than 10～20 ℃ of sealing layer melting temperatures, the sealing-in of completing substrate and cover plate.
10. the method for packing of the encapsulating structure of organic electroluminescence device according to claim 9, it is characterized in that: when described sealing-in substrate and cover plate, the kind of protective gas is a kind of of nitrogen or inert gas, and purity is 99.99%～99.999%.
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| CN201210435587.XA CN102916137B (en) | 2012-11-05 | 2012-11-05 | A kind of encapsulating structure of organic electroluminescence device and method for packing |
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|---|---|---|---|
| CN201210435587.XA CN102916137B (en) | 2012-11-05 | 2012-11-05 | A kind of encapsulating structure of organic electroluminescence device and method for packing |
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| CN102916137B CN102916137B (en) | 2015-10-14 |
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| CN103515546A (en) * | 2013-10-24 | 2014-01-15 | 四川虹视显示技术有限公司 | OLED (Organic Light Emitting Diode) substrate cutting protection device and cutting method |
| CN106711357A (en) * | 2017-01-20 | 2017-05-24 | 深圳市华星光电技术有限公司 | OLED (Organic Light-Emitting Diode) encapsulation method |
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