CN102916037B - Active-matrix organic light-emitting display and display device - Google Patents
Active-matrix organic light-emitting display and display device Download PDFInfo
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- CN102916037B CN102916037B CN201210387826.9A CN201210387826A CN102916037B CN 102916037 B CN102916037 B CN 102916037B CN 201210387826 A CN201210387826 A CN 201210387826A CN 102916037 B CN102916037 B CN 102916037B
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Abstract
The invention discloses an active-matrix organic light-emitting display and a display device. A threadlike power supply signal wire in the prior art is redesigned and optimized in the way that the threadlike power supply signal wire is changed into a plurality of layers of electrically connected planar power supply signal electrodes covering the whole panel display area. Compared with a threadlike power supply signal wire in an AMLOED (Active Matrix/Organic Light Emitting Diode) in the prior art, the whole multi-layer planar power supply signal electrode can greatly reduce the resistance, so that IR drop caused when the power supply signal electrode transmits a power supply voltage signal is reduced, the influence on the display effect from the IR drop is effectively reduced and the power consumption of the panel is also effectively reduced.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of active matrix organic electroluminescent display device and display unit.
Background technology
Organic elctroluminescent device (OLED, Organic Light-Emitting Display) refers to that organic semiconductor luminescent material is under electric field driven, by the phenomenon of carrier injection and composite guide photoluminescence.Its principle of luminosity utilizes indium tin metal oxide (ITO, Indium Tin Oxides) transparency electrode and metal electrode be respectively as the anode of device and negative electrode, under certain voltage drives, electronics and hole are injected into electronics and hole transmission layer from negative electrode and anode respectively, electronics and hole move to luminescent layer respectively through electronics and hole transmission layer, and the formation exciton that meets in luminescent layer makes light emitting molecule excite, the latter sends visible ray through radiative relaxation.OLED has thinner lighter, active illuminating (not needing backlight), without viewing angle problem, high definition, high brightness, response is quick, energy consumption is low, serviceability temperature scope is wide, shock resistance is strong, cost is low and can realize the advantages such as softness display.
OLED can be divided into passive drive and active matrix driving two large class, i.e. direct addressin and thin-film transistor (TFT) matrix addressing two class according to type of drive.Wherein, active matrix driving is independently controlled by TFT addressing also referred to as each luminescence unit in active matrix (AM) type.The dot structure of luminescence unit and TFT addressing circuit composition needs to load direct current power source voltage signal (VDD) by power signal line to it and drives.
And the current wire laying mode of power signal line in AMOLED panel, as shown in Figure 1, generally arrange and dot structure power signal line one to one at the gap location of every row dot structure, and the peripheral power supply holding wire of a trap conjunction is set outside the viewing area of panel, the direct current power source voltage signal (VDD) from signal source IC is transferred in coupled dot structure respectively by these power signal lines.As shown in Figure 2, it is the wire laying mode of another kind of power signal line, relative to the wire laying mode shown in Fig. 1, the wire laying mode of Fig. 2 is often adding power signal line between row dot structure, by the power signal line of newly-increased transverse direction wiring and the power signal line interconnection of longitudinally wiring, form a network structure, and be connected with the peripheral power supply holding wire outside viewing area, this wire laying mode effectively can reduce the voltage attenuation (IR Drop) when direct current power source voltage signal transmits on power signal line, thus the power consumption of reduction AMOLED panel and voltage attenuation are on the impact of display effect.
When the wire laying mode of above-mentioned power signal line is used for undersized AMOLED, effectively can improve the impact of the voltage attenuation on power signal line on display effect, and the power consumption of panel is decreased, but along with the increase of AMOLED size, the wire laying mode of above-mentioned power signal line can not solve voltage attenuation effectively on the impact of display effect and panel power problems.
Summary of the invention
Embodiments provide a kind of active matrix organic electroluminescent display device and display unit, in order to the impact on display effect and panel power consumption of the voltage attenuation that effectively reduces power signal line in existing AMOLED.
A kind of active matrix organic electroluminescent display device that the embodiment of the present invention provides, comprise multiple dot structures of the arrangement in matrix, also comprise: for each described dot structure provides the power supply signal structure of power supply signal, described power supply signal structure comprises at least two-layer power supply signal electrode be electrical connected, and every layer of described power supply signal electrode has planar structure.
A kind of display unit that the embodiment of the present invention provides, comprises the above-mentioned active matrix organic electroluminescent display device that the embodiment of the present invention provides.
The beneficial effect of the embodiment of the present invention comprises:
A kind of active matrix organic electroluminescent display device that the embodiment of the present invention provides and display unit, the power signal line of wire in prior art is carried out redesign optimizing, it is changed to the power supply signal electrode of the planar structure of whole the cover plate viewing area that multilayer is electrical connected by wire, relative to the power signal line of wire in AMOLED in prior art, the power supply signal electrode of multilayer monoblock planar can greatly reduce its resistance, thus voltage attenuation when reducing power supply signal electrode transmission power supply voltage signal, effective reduction voltage attenuation is on the impact of display effect, and effectively reduce the power consumption of panel.
Accompanying drawing explanation
Fig. 1 is one of wire structures schematic diagram of power signal line in the AMOLED of prior art;
Fig. 2 is the wire structures schematic diagram two of power signal line in the AMOLED of prior art;
What Fig. 3 provided for the embodiment of the present invention has one of structural representation of the AMOLED panel of power supply signal structure;
The concrete structure schematic diagram of dot structure in the AMOLED that Fig. 4 provides for the embodiment of the present invention;
The structural representation two with the AMOLED panel of power supply signal structure that Fig. 5 provides for the embodiment of the present invention;
The structural representation of the bottom emission type AMOLED that Fig. 6 a, Fig. 6 b and Fig. 6 c provide for the embodiment of the present invention;
The structural representation of the top emission type AMOLED that Fig. 7 a, Fig. 7 b and Fig. 7 c provide for the embodiment of the present invention;
The structural representation with the AMOLED panel of power supply signal electrode and electrode signal line that Fig. 8 and Fig. 9 provides for the embodiment of the present invention;
The structural representation of low level signal electrode in the AMOLED that Figure 10 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the active matrix organic electroluminescent display device provide the embodiment of the present invention and the embodiment of display unit are described in detail.
In accompanying drawing, each layer film thickness and area size do not reflect actual proportions, and object just signal illustrates content of the present invention.
A kind of active matrix organic electroluminescent display device (OLED) that the embodiment of the present invention provides, as shown in Figure 3, specifically comprise: multiple dot structures of the arrangement in matrix, also comprise: for each dot structure provides the power supply signal structure of power supply signal, this power supply signal structure comprises at least two-layer power supply signal electrode be electrical connected, and every layer of power supply signal electrode has planar structure.
The above-mentioned AMOLED that the embodiment of the present invention provides, the power signal line of wire in prior art is carried out redesign optimizing, it is changed to the power supply signal electrode of the planar structure of multilayer whole cover plate viewing area by wire, the power supply signal electrode of multilayer monoblock planar can greatly reduce its resistance, thus voltage attenuation when reducing power supply signal electrode transmission power supply voltage signal, effective reduction voltage attenuation on the impact of display effect, and effectively reduces the power consumption of panel.
Below the dot structure of above-mentioned AMOLED and the concrete structure of power supply signal structure are described in detail.
Particularly, in AMOLED dot structure generally by the resilient coating be positioned at successively on lower underlay substrate, control TFT structure, organic EL ray structure and on underlay substrate form, as shown in Figure 4, control TFT structure can specifically comprise: active layer, gate insulation layer, grid, protective layer, source-drain electrode, the first insulating barrier; In addition, control TFT structure and also can be traditional top gate type or bottom-gate type configuration, do not limit at this.Organic electroluminescence EL ray structure can specifically comprise: pixel electrode, edge protection layer, hole transmission layer, organic luminous layer, electron transfer layer, negative electrode; In addition, the such as rete such as electronic barrier layer and hole blocking layer can also be comprised, do not describe in detail at this.
In prior art, the power signal line of wire is general is arranged with layer with source-drain electrode, namely by a patterning processes formation power signal line and source-drain electrode, and in the AMOLED that the embodiment of the present invention provides, power signal line is redesigned into the multilayer power supply signal electrode of planar structure, in order to not affect the normal work of dot structure, in the specific implementation, specifically comprise two-layer power supply signal electrode i.e. the first power supply signal electrode and second source signal electrode for power supply signal structure to illustrate, as shown in Figure 5, first power supply signal electrode can be arranged between resilient coating and lower underlay substrate, second source signal electrode can be arranged between negative electrode in organic EL ray structure and upper underlay substrate, and by the second insulating barrier and negative electrode mutually insulated.Certainly this two-layer power supply signal electrode also can be arranged between resilient coating and lower underlay substrate or between negative electrode and upper underlay substrate simultaneously, and also can form power supply signal structure by two-layer above power supply signal electrode, does not limit at this.
Particularly, the above-mentioned AMOLED that the embodiment of the present invention provides can be applied to top emission type and bottom emission type AMOLED.And, in order to reduce resistance, multilayer power supply signal electrode is generally by opaque metal, like this, in order to not affect the normal luminous of dot structure, in the specific implementation, when dot structure is bottom emission type, the first power supply signal electrode between resilient coating and lower underlay substrate, as shown in Fig. 6 a, Fig. 6 b and Fig. 6 c, the pattern without the first power supply signal electrode should be arranged to, to ensure that the light that organic luminous layer inspires normally can be penetrated by luminescence window in the region corresponding with the luminescence window of each dot structure.
In like manner, in the specific implementation, when dot structure is top emission type, second source signal electrode between negative electrode and upper underlay substrate, as shown in Fig. 7 a, Fig. 7 b and Fig. 7 c, the pattern without second source signal electrode should be arranged to, to ensure that the light that organic luminous layer inspires normally can be penetrated by luminescence window in the region corresponding with the luminescence window of each dot structure.
Particularly, because power supply signal structure is not arranged in each rete of dot structure, in order to ensure that power supply signal structure normally can provide power supply voltage signal to dot structure, in the specific implementation, first power supply signal electrode and second source signal electrode directly can be electrical connected by via hole, and by the first power supply signal electrode or second source signal electrode by via hole and the active layer controlled in TFT structure, pixel electrode in source-drain electrode or organic EL ray structure is electrical connected, such as: as shown in Fig. 6 c and Fig. 7 c, first power electrode and second source electrode are directly electrical connected by via hole, first power supply signal electrode is electrical connected by via hole and source-drain electrode.In the specific implementation, first power supply signal electrode and second source signal electrode can also be electrical connected with the pixel electrode in the active layer, source-drain electrode or the organic EL ray structure that control in TFT structure respectively by via hole, such as: as illustrated in figures 6 a and 7 a, first power supply signal electrode is electrical connected by via hole and active layer, and second source signal electrode is electrical connected by via hole and pixel electrode; As shown in Fig. 6 b and 7b, the first power supply signal electrode is electrical connected by via hole and source-drain electrode, and second source signal electrode is electrical connected by via hole and pixel electrode.The above-mentioned annexation just illustrating each rete in the first power supply signal electrode and second source signal electrode and dot structure, is not limited thereto in the specific implementation.
Below for the AMOLED structure shown in Fig. 6 a, be described in detail to its preparation process, its preparation technology specifically comprises the following steps:
1, namely descend on underlay substrate to deposit layer of metal layer at blank glass, utilize the technique such as etching, photoresist lift off of the exposure of a patterning processes and mask plate, development, metal level, form power supply signal electrode pattern.
2, buffer layer on power supply signal electrode pattern, this resilient coating can use SiNx/SiO
2double layer material formed, being formed for connecting power supply signal electrode and the via hole of the active layer that will be formed by patterning processes, power supply voltage signal can be transferred in the active layer of dot structure by this via hole power supply signal electrode.
3, deposited amorphous silicon semiconductor layer on the buffer layer, adopts low temperature polysilicon process by its amorphous silicon crystallization afterwards, forms polysilicon (P-Si), utilizes a patterning processes to form active layer pattern afterwards.
4, on the figure of active layer, form gate insulation layer (GI), specifically this GI layer can use SiO
2the double layer material of/SiNx is formed.
5, deposition of gate metal level on GI layer, utilizes one-time process to form grid and signal line graph.
6, utilize the grid formed as barrier layer, ion implantation (Doping) technique is carried out in the region corresponding with the source-drain electrode that will be formed to active layer, carries out ion-activated technique afterwards.
7, on the figure of grid and signal line, form protective layer (ILD), and form the via hole for being connected to active layer and the source-drain electrode that will be formed by patterning processes.
8, form source-drain electrode metal level on the protection layer, and pass through the figure of a patterning processes formation source-drain electrode and data signal line.
9, depositing first insulator layer (SiNx/SiO on source-drain electrode metal level
2) and planarization layer (PLN) and resin material, carry out hydrogenation process afterwards to promote the crystallization characteristic of active layer.Patterning processes is utilized to be formed for the via hole of pixel electrode connecting source-drain electrode and will be formed.
10, pixel deposition electrode layer (ITO) on the first insulating barrier and planarization layer, and form pixel electrode figure by a patterning processes.
11, on pixel electrode figure, edge protection layer (PDL), hole transmission layer, organic luminous layer, electron transfer layer and negative electrode is formed successively, the upper underlay substrate of finally laminating.
Preferably, in order to reduce the resistance of power supply signal electrode further, the above-mentioned AMOLED that the embodiment of the present invention provides, as shown in Figure 8, power supply signal structure can also comprise: the power signal line arranged with layer with the source-drain electrode controlled in TFT structure, this power signal line is in parallel with every layer of power supply signal electrode, reduces the resistance of each layer power supply signal electrode further, thus reduces the voltage attenuation of power supply voltage signal when transmitting.In the specific implementation, such as: by via hole, power signal line and active layer can be electrical connected, and each layer power supply signal electrode and active layer are electrical connected by via hole, like this, power signal line and each layer power supply signal electrode just define parallel-connection structure, as shown in Figure 9, by other concrete structures, both can certainly be formed parallel-connection structure, not limit at this.
Further, in the above-mentioned AMOLED that the embodiment of the present invention provides, can also comprise: at least one deck low level signal electrode (VSS) be electrical connected with the negative electrode in organic EL ray structure, every layer of low level signal electrode all has planar structure.Particularly, as shown in Figure 10, every layer of low level signal electrode can be electrical connected by via hole, reduces the resistance of low level signal electrode further, thus reduces the power consumption of VSS.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of display unit, comprise the above-mentioned active matrix organic electroluminescent display device that the embodiment of the present invention provides, the enforcement of this display unit see the embodiment of above-mentioned active matrix organic electroluminescent display device, can repeat part and repeats no more.
A kind of active matrix organic electroluminescent display device that the embodiment of the present invention provides and display unit, the power signal line of wire in prior art is carried out redesign optimizing, it is changed to the power supply signal electrode of the planar structure of multilayer whole cover plate viewing area by wire, relative to the power signal line of wire in AMOLED in prior art, the power supply signal electrode of multilayer monoblock planar can greatly reduce its resistance, thus voltage attenuation when reducing power supply signal electrode transmission power supply voltage signal, effective reduction voltage attenuation is on the impact of display effect, and effectively reduce the power consumption of panel.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. an active matrix organic electroluminescent display device, comprise multiple dot structures of the arrangement in matrix, it is characterized in that, also comprise: for each described dot structure provides the power supply signal structure of power supply signal, described power supply signal structure comprises at least two-layer power supply signal electrode be electrical connected, and every layer of described power supply signal electrode has planar structure; At least one deck low level signal electrode be electrical connected with the negative electrode in the organic EL ray structure in described dot structure, every layer of described low level signal electrode has planar structure.
2. device as claimed in claim 1, is characterized in that, described dot structure has the resilient coating be positioned at successively on lower underlay substrate, controls thin-film transistor TFT structure, organic electroluminescence EL ray structure and upper underlay substrate;
Described power supply signal structure also comprises: the power signal line arranged with layer with the source-drain electrode in described control TFT structure, and described power signal line is in parallel with power supply signal electrode every layer described.
3. device as claimed in claim 2, it is characterized in that, described power supply signal structure specifically comprises the first power supply signal electrode and second source signal electrode; Wherein,
Described first power supply signal electrode is between described resilient coating and lower underlay substrate;
Between the negative electrode of described second source signal electrode in described organic EL ray structure and upper underlay substrate, and by the second insulating barrier and described negative electrode mutually insulated.
4. device as claimed in claim 3, it is characterized in that, described dot structure is bottom emission type, described first power supply signal electrode in the region corresponding with the luminescence window of each dot structure without the pattern of described first power supply signal electrode.
5. device as claimed in claim 3, it is characterized in that, described dot structure is top emission type, described second source signal electrode in the region corresponding with the luminescence window of each dot structure without the pattern of described second source signal electrode.
6. the device as described in any one of claim 3-5, it is characterized in that, described first power supply signal electrode and second source signal electrode are electrical connected by via hole, and described first power supply signal electrode or second source signal electrode are electrical connected by the pixel electrode in the active layer in via hole and described control TFT structure, source-drain electrode or organic EL ray structure.
7. the device as described in any one of claim 3-5, it is characterized in that, described first power supply signal electrode and second source signal electrode by via hole respectively with the active layer in described control TFT structure, source-drain electrode or, pixel electrode in organic EL ray structure is electrical connected.
8. a display unit, is characterized in that, comprises the active matrix organic electroluminescent display device as described in any one of claim 1-7.
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| CN103531106B (en) | 2013-10-28 | 2015-06-03 | 京东方科技集团股份有限公司 | Active matrix and organic light emission diode displaying back plate and active and organic light emitting diode displaying equipment |
| CN103745985B (en) * | 2013-12-27 | 2015-03-18 | 京东方科技集团股份有限公司 | Active matrix OLED (Organic Light-Emitting Diode) display substrate and display device |
| CN104050915B (en) * | 2014-05-30 | 2015-06-03 | 京东方科技集团股份有限公司 | AMOLED display panel and AMOLED display device |
| CN106024845B (en) * | 2016-08-01 | 2019-02-26 | 深圳市华星光电技术有限公司 | A kind of organic light emitting diode display and preparation method thereof |
| CN107871757B (en) * | 2016-09-23 | 2020-04-14 | 京东方科技集团股份有限公司 | Organic light emitting diode array substrate, preparation method thereof and display device |
| US12016215B2 (en) | 2019-10-14 | 2024-06-18 | Chongqing Boe Optoelectronics Technology Co., Ltd. | Display substrate and AMOLED display device |
| CN112928195B (en) * | 2021-01-29 | 2022-12-02 | 京东方科技集团股份有限公司 | Light-emitting substrate, method for preparing light-emitting substrate and display device |
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