CN102915920A - Method for lowering particle defects after chemical mechanical polishing - Google Patents
Method for lowering particle defects after chemical mechanical polishing Download PDFInfo
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- CN102915920A CN102915920A CN2012103757245A CN201210375724A CN102915920A CN 102915920 A CN102915920 A CN 102915920A CN 2012103757245 A CN2012103757245 A CN 2012103757245A CN 201210375724 A CN201210375724 A CN 201210375724A CN 102915920 A CN102915920 A CN 102915920A
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Abstract
The invention discloses a method for lowering particle defects after chemical mechanical polishing and belongs to the technical field of chemical mechanical polishing. An ion blower gun is added to an ultrapure water supply pipeline of a chemical mechanical polishing device. The ion blower gun is used for adding positive and negative ions to a silicon wafer. The positive and negative ions are used for neutralizing and releasing electostatic charge, accumulated on the surface, contacted with the positive and negative ions, of the silicon wafer. The method has the advantages that the positive and negative ions are introduced by the ion blower gun to improve conductivity of the silicon wafer and neutralize and release electostatic charge, accumulated on the surface, contacted with the positive and negative ions, of the silicon wafer, attraction to surrounding charge particles is reduced, and the particle defects after chemical mechanical polishing are lowered.
Description
Technical field
The present invention relates to the chemico-mechanical polishing field, relate in particular to a kind of method that reduces particle defects after the chemico-mechanical polishing.
Background technology
At integrated circuit (Integrated Circuit, IC) in the manufacturing, chemico-mechanical polishing (Chemical Mechanical Planarization, CMP) as unique technology that can realize overall planarization at the shallow trench isolation of realizing device from (Shallow Trench Isolation, STI) and the aspects such as interconnection of multi-layer metal structure be widely applied, become one of main flow key technology that semiconductor makes.Matting behind the CMP is an important composition part of CMP integrated artistic.Along with constantly dwindling of chip features size and improving constantly of chip integration, also more and more higher to the control requirement of silicon chip surface particle defects behind the CMP.
The adhesive force that particulate is adsorbed onto silicon chip surface mainly comprises capillary force, Van der Waals force and electrostatic force.Generally speaking; be attached to particulate or other defective of silicon chip surface because of capillarity; such as washmarking (Water Mark); can be avoided by the wetability of adding surfactant and improve hydrophobic surface; or adopt anhydrous seasoning; such as isopropyl alcohol (Iso-Propyl alcohol, IPA) vapour seasoning method, avoid between silicon chip and particulate forming liquid film and improve.The size of Van der Waals force depends on the distance of diameter of particle size and particulate and silicon chip surface.Particulate and surface distance are larger, and Van der Waals force can corresponding reducing.Generally can pass through external force, overcome Van der Waals force such as brushing piece (Scrubbing) or ultrasonic wave particulate and silicon chip are separated.
It is generally acknowledged, Electrostatic Absorption accounts for Main Function in the formation of CMP particle defects.Because the CMP process relates to frequently flowing of high resistance liquid (deionized water, ultra-pure water, cleaning fluid etc.); Macromolecular material (grinding pad, brush) is to mechanical processes such as the grinding of silicon chip or scourings.Easily cause separation of charge.In addition, because abrasive action is so that there are the high density dangling bonds in the chemical bond rupture of silicon chip surface, energy is high, and polarity is strong.So the silicon chip surface behind the CMP is easy to accumulate electrostatic charge, the charged bur around strong the attraction.Particle diameter is less, electrically stronger, more easily absorption.These charged burs can be that particle is stained and metal impurities.Particle is stained and is mainly derived from the residual particulates that polishing pad wearing and tearing generate, the insulating barrier or the metal level material particulate grain that grind from silicon chip, or suspension abrasive particles, especially silica flour and oxide particle in the polishing fluid.Metal impurities then result from and participate in the related metallochemistry reaction of CMP technique and reactant and the product of electrochemical reaction.If do not carry out effectively cleaning rapidly removing for these burs behind the CMP, namely can continue corrosion or finally form the extremely difficult chemical bonding of removing along with the prolongation of time changes chemisorbed into by physical absorption at silicon chip surface, the blemish that causes thus with stain.How effectively removing the bur that is attached to silicon chip surface behind the CMP becomes the significant challenge of CMP technique.
Generally grind the stage in the later stage of CMP technique, need to use ultra-pure water carry out water mill (Water Polishing) and high pressure washing to silicon chip, with the chemical constituent of the participation of adhering to the in a large number reaction of removing silicon chip surface, grind the abrasive particles of residual particulates and suspension.As shown in Figure 1, the conductance of this high purity water is very low, is unfavorable for the release of electrostatic charge.
As shown in Figure 2, show according to experiment, the particle after the CMP technique is stained (Particle Defect) significantly to be increased with the prolongation of milling time.This may come from long grinding and cause a large amount of static charge accumulations at silicon chip surface, has adsorbed more charged corpuscle and is difficult to remove in follow-up cleaning.
Studies show that can be by changing the x electromotive force of silicon chip and microparticle surfaces, as utilize the characteristic of non-ionic surface active agent, change electrostatic force polarity between silicon chip surface and particle, effectively control the particle absorption (" utilizing surfactant effectively to remove ULSI silicon substrate adsorption particle " of silicon chip surface, Journal of Electron Devices, Vol.23, No.4, Dec.2000).If but the method misapplication, the spontaneous gathering formation micella of surfactant molecule meeting or micelle are to reduce free energy.This micella deposits to silicon chip surface, is unfavorable on the contrary the removal of particulate contaminants.Although the surface potential that can also control particulate and silicon chip by regulating pH value in lapping liquid or the cleaning fluid and ionic strength, this adjusting must be not affecting other grinding or cleaning characteristics as criterion, thereby are very limited.
If the suitable introducing ion that can not pollute in this high purity water can significantly improve the conductivity of water, equilibrium,transient and discharge the electrostatic charge of silicon chip surface accumulation, the particle absorption of effect ground control silicon chip surface.And the limitation when not using surfactant.
Be illustrated in figure 3 as the conductivity schematic diagram of different ions in water-carbon dioxide system, can see that wherein carbon dioxide is on the impact of the conductivity of pure water.
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Summary of the invention
According to the defective that exists in the prior art, a kind of method that reduces particle defects after the chemico-mechanical polishing now is provided, specific as follows:
A kind of method that reduces particle defects after the chemico-mechanical polishing wherein, increases ion wind gun in the ultra-pure water supply line of chemical-mechanical polisher, described ion wind gun is used for adding negative ions to silicon chip; Described negative ions is used for the electrostatic charge that neutralization discharges the surface accumulation of the described silicon chip that contacts with described negative ions.
Preferably, the method for particle defects after this reduction chemico-mechanical polishing, wherein, the addition of described negative ions is regulated by the curtage of described ion wind gun.
Preferably, the method for particle defects after this reduction chemico-mechanical polishing wherein, increases described ion wind gun in the pure water supply terminal of described chemical-mechanical polisher.
Preferably, the method for particle defects wherein, accesses described ion wind gun from the outside of described chemical-mechanical polisher after this reduction chemico-mechanical polishing.
Preferably, the method for particle defects after this reduction chemico-mechanical polishing wherein, increases a watch-dog in described chemical-mechanical polisher, and described watch-dog is connected with described ion wind gun; Described watch-dog is used for monitoring the addition of described negative ions.
Preferably, the method for particle defects after this reduction chemico-mechanical polishing, wherein, described watch-dog is integrated in the described chemical-mechanical polisher.
Preferably, the method for particle defects after this reduction chemico-mechanical polishing, wherein, described watch-dog separates from outside the described chemical-mechanical polisher.
The beneficial effect of technique scheme is: utilize ion wind gun to introduce negative ions, strengthen the conductivity of silicon chip, neutralization discharges the electrostatic charge of the silicon chip surface accumulation of with it contact, reduces the attraction of charged particle on every side, thereby has reduced the particle defects after the chemico-mechanical polishing.
Description of drawings
Fig. 1 is the signal chart of pure water conductivity in the prior art;
Fig. 2 is the schematic diagram that CMP stains level for later particle in the prior art;
Fig. 3 is the signal chart of different ions conductivity in water-carbon dioxide system in the prior art;
Fig. 4 is the schematic diagram that particle is stained level behind the introducing negative ions in one embodiment of the present of invention.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments, but not as limiting to the invention.
Ion wind gun is a kind of effective tool of introducing negative ions.Its operation principle is to utilize external high-pressure generator supply power supply, ion pin in the rifle mouth produces corona discharge under High Pressure, the high pressure draught that will pass through ionization is a large amount of negative ions, and ion wind blows to rapidly the static of the zone that needs to remove static in should the zone and neutralizes.
Utilize ion wind gun can effectively prevent from producing accumulation of static electricity in the processes such as grinding, cleaning, eliminate Electrostatic Absorption.The final ion air pressure gun is just introduced negative ions and is not produced residual impurity, does not cause secondary pollution, nor can change the pH value of lapping liquid, can not cause abrasive grains to assemble at grinding pad.
One embodiment of the present of invention provide a kind of method that reduces particle defects after the chemico-mechanical polishing, particle defects after employing increases ion wind gun in the ultra-pure water supply line of chemical-mechanical polisher mode reduces CMP, this ion wind gun are used for adding negative ions to silicon chip; Negative ions is used for the electrostatic charge that neutralization discharges the surface accumulation of the silicon chip that contacts with negative ions; The addition of negative ions is regulated by the curtage of ion wind gun.And can carry out Real Time Monitoring by a watch-dog, this watch-dog is connected with the rifle mouth of ion wind gun, and is integrated within the CMP equipment or separates from outside the CMP equipment.
The position of this ion wind gun can also be placed in the pure water supply terminal of chemical-mechanical polisher except in the ultra-pure water supply line, can directly blow ion wind to silicon chip in process of lapping or rear cleaning process.
Except above-mentioned position, can also connect ion gun equipment by external mode and introduce negative ions.
In one embodiment of the present of invention, provide a CMP equipment.Silicon chip grinds by three grinding pads 1,2,3 successively, in general, leads grinding at grinding pad 1,2, carries out water mill at grinding pad 3.After grinding was finished, (Desica Cleaner) carried out the cleaning of silicon chip at the afterwash device.In general, the afterwash process comprises 4 steps, that is:
Step 1: carry out Ultrasonic Cleaning.
Step 2: with the soft brush of polymer silicon chip is cleaned, when soft brush is scrubbed silicon chip, spray the hydrofluoric acid of certain hour to strengthen cleansing power, wash with ultra-pure water more afterwards.
Step 3: with the soft brush of polymer silicon chip is cleaned, when soft brush is scrubbed silicon chip, spray the ammoniacal liquor of certain hour to strengthen cleansing power, wash with ultra-pure water more afterwards.
For one embodiment of the present of invention, ion wind gun is added the process of negative ions, can carry out at grinding pad 3 the stage introducing of water mill, step 2 that also can be in the afterwash process, introduce when 3 usefulness ultra-pure waters clean, also can be as indicated above in before pure water supply line or pure water supply terminal, introduce.
As shown in Figure 3, can find out through the technological process of above-mentioned improvement and process, particle is stained level and has been obtained obvious decline behind the introducing negative ions.
The above only is preferred embodiment of the present invention; be not so restriction embodiments of the present invention and protection range; to those skilled in the art; should recognize that being equal to that all utilizations specification of the present invention and diagramatic content done replace and the resulting scheme of apparent variation, all should be included in protection scope of the present invention.
Claims (7)
1. a method that reduces particle defects after the chemico-mechanical polishing is characterized in that, increases ion wind gun in the ultra-pure water supply line of chemical-mechanical polisher, and described ion wind gun is used for adding negative ions to silicon chip; Described negative ions is used for the electrostatic charge that neutralization discharges the surface accumulation of the described silicon chip that contacts with described negative ions.
2. the method for particle defects after the reduction chemico-mechanical polishing as claimed in claim 1 is characterized in that, the addition of described negative ions is regulated by the curtage of described ion wind gun.
3. the method for particle defects after the reduction chemico-mechanical polishing as claimed in claim 1 is characterized in that, increases described ion wind gun in the pure water supply terminal of described chemical-mechanical polisher.
4. the method for particle defects after the reduction chemico-mechanical polishing as claimed in claim 3 is characterized in that, accesses described ion wind gun from the outside of described chemical-mechanical polisher.
5. the method for particle defects after the reduction chemico-mechanical polishing as claimed in claim 4 is characterized in that, increases a watch-dog in described chemical-mechanical polisher, and described watch-dog is connected with described ion wind gun; Described watch-dog is used for monitoring the addition of described negative ions.
6. the method for particle defects after the reduction chemico-mechanical polishing as claimed in claim 5 is characterized in that, described watch-dog is integrated in the described chemical-mechanical polisher.
7. the method for particle defects after the reduction chemico-mechanical polishing as claimed in claim 6 is characterized in that, described watch-dog separates from outside the described chemical-mechanical polisher.
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| CN2012103757245A CN102915920A (en) | 2012-10-08 | 2012-10-08 | Method for lowering particle defects after chemical mechanical polishing |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681414A (en) * | 2015-02-28 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Cleaning method of polycrystalline silicon processed by chemical mechanical polishing |
| CN111681949A (en) * | 2020-06-22 | 2020-09-18 | 长江存储科技有限责任公司 | Method for processing back of wafer |
| CN114038938A (en) * | 2021-10-13 | 2022-02-11 | 天合光能(宿迁)光电有限公司 | Pad point design process applied to solar cell screen printing |
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| JP2000271551A (en) * | 1999-03-25 | 2000-10-03 | Kawasaki Steel Corp | Method for removing liquid attached to object |
| CN101386011A (en) * | 2008-10-09 | 2009-03-18 | 英保达资讯（天津）有限公司 | Dry wet mixing dust removing treatment system and dust removing method thereof |
| CN201995195U (en) * | 2011-01-11 | 2011-09-28 | 东莞市景豪防静电科技有限公司 | Ionizing air gun |
| CN102446755A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for reducing particle defects after chemically mechanical polishing |
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2012
- 2012-10-08 CN CN2012103757245A patent/CN102915920A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000271551A (en) * | 1999-03-25 | 2000-10-03 | Kawasaki Steel Corp | Method for removing liquid attached to object |
| CN101386011A (en) * | 2008-10-09 | 2009-03-18 | 英保达资讯（天津）有限公司 | Dry wet mixing dust removing treatment system and dust removing method thereof |
| CN201995195U (en) * | 2011-01-11 | 2011-09-28 | 东莞市景豪防静电科技有限公司 | Ionizing air gun |
| CN102446755A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for reducing particle defects after chemically mechanical polishing |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681414A (en) * | 2015-02-28 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | Cleaning method of polycrystalline silicon processed by chemical mechanical polishing |
| CN111681949A (en) * | 2020-06-22 | 2020-09-18 | 长江存储科技有限责任公司 | Method for processing back of wafer |
| CN111681949B (en) * | 2020-06-22 | 2021-05-18 | 长江存储科技有限责任公司 | Method for processing back of wafer |
| CN114038938A (en) * | 2021-10-13 | 2022-02-11 | 天合光能(宿迁)光电有限公司 | Pad point design process applied to solar cell screen printing |
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Application publication date: 20130206 |