CN102915899A - Method and equipment for regulating parallelism of ion beams in ion implantation device - Google Patents
Method and equipment for regulating parallelism of ion beams in ion implantation device Download PDFInfo
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- CN102915899A CN102915899A CN2012102874896A CN201210287489A CN102915899A CN 102915899 A CN102915899 A CN 102915899A CN 2012102874896 A CN2012102874896 A CN 2012102874896A CN 201210287489 A CN201210287489 A CN 201210287489A CN 102915899 A CN102915899 A CN 102915899A
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Abstract
The invention provides a method and equipment for regulating the parallelism of ion beams in an ion implantation device. A method for implanting ions into a workpiece comprises the following steps of: generating the ion beams; regulating the parallelism of the ion beams to a required parallelism in a plane; measuring the ion beam direction of the regulated ion beams in the plane; inclining the workpiece to an implantation angle relative to the measured ion beam direction around an axis vertical to the plane; and implementing implantation of the workpiece which is inclined to the implantation angle.
Description
The application be that February 28, application number in 2002 are 02106603.5 the applying date, denomination of invention divides an application for the application for a patent for invention of " regulating the method and apparatus of ion beam parallel in ion implanter ".
Technical field
The present invention relates to the method and system of the Implantation of semiconductor wafer or other workpiece, more specifically, the present invention relates in ion implanter, regulate the method and apparatus of ion beam parallel.
Background technology
Implantation is that the conductive admixture of change is incorporated into specification technique in the semiconductor wafer.In the ion source ionization, speeding-up ion forms the ion beam of prescribed energy, and ion beam is pointed to wafer surface with required admixture.Enter the loose part of semiconductor substance in the ion beam with the ion penetration of energy, and form required conductive zone in the lattice of embedding semiconductor substance.
Ion implant systems generally includes gas or solid matter are converted to the ion source of well-defined ion beam.Ion beam is carried out mass spectral analysis to remove unwanted ionic species, then ion beam is accelerated to institute's energy requirement and also refer on objective plane.By ion-beam scanning, Suitable For Moving-goal Problems or the combination by ion-beam scanning and Suitable For Moving-goal Problems make ion beam distribute in the target area.The ion implanter that uses ion-beam scanning and Suitable For Moving-goal Problems to combine is authorized in the people's such as Berrian the U.S. Patent No. 4,922,106 open in May 1 nineteen ninety.
In many application, all be very important necessary condition with parallel ion beam to the conveying of semiconductor wafer.Parallel ion beam is the ion beam that has parallel ion trajectories at semiconductor wafer surface.In the situation of ion-beam scanning, require ion beam keeping parallelism on wafer surface of scanning.Parallel ion beam can prevent incident ion channel in the crystal structure of semiconductor wafer, perhaps in needing the situation of channel so that channel is even.Usually, when needs ion beam height is parallel, use the continuous ionic injector.
In a method, ion beam is at one-dimensional scanning, and ion beam presents from a dispersion like this, is called scan source.Then ion beam is passed the ion optical element of implementing focusing.Ion optical element converts ion trajectory to parallel ion trajectories to be transported on the semiconductor wafer.Focusing can be implemented with the angle corrector magnet or with electrostatic lens.Angle corrector magnet can produce ion beam crooked and that focus on.Use electrostatic lens can obtain parallel ion beam, but energy contamination may be a shortcoming.
Can be parallel from the ion beam of angle corrector magnet or other concentrating elements output, maybe can be concentrate on any or disperse, this depends on the parameter of ion beam and the parameter of concentrating element.When the use angle corrector magnet, the parallel of ion beam can be regulated by the magnetic field that changes angle corrector magnet.Angle corrector magnet generally has single flux control effect, and it changes parallel or angle of bend, or ion beam direction.Be appreciated that and think that ion implanter usually needs to operate multiple different ionic species and ion energy.When ion beam parameters changes, need to readjust angle corrector magnet to recover the parallel of ion beam.
In the ion implanter of prior art, the adjusting angle corrector magnet is so that ion beam can have vertical incidence on the wafer plane of ion implanter terminal position usually.Yet, can may produce in the regulating action that wafer plane obtains the angle corrector of vertical incidence and not be optimized parallel.Specifically, the adjusting ion beam is understood the dispersion of some degree with the ion beam of vertical incidence on wafer plane or is concentrated.As shown in FIG. 8, the adjusting angle corrector magnet is so that the central ray of ion beam 200 is vertical and wafer plane 202.Yet when ion beam 200 was regulated vertical and wafer plane 202, the parallel of ion beam 200 can be demoted, and ion beam is concentrated in a bit or disperses like this.Parallel defective is unacceptable in some very important application.
In another kind of method, under normal conditions, angle corrector magnet generally is designed to best parastate, and the ion implanter terminal position is positioned to the ion beam vertical incidence on wafer.But the parallel and vertical incidence of ion beam can not keep in the wide range of ion beam parameters, and the location of change terminal position is very difficult.
Therefore, existence is to the Innovative method of the ion beam parallel of adjusting ion implanter and the needs of equipment.
Summary of the invention
According to first aspect of the present invention, provide a kind of in workpiece the method for ion.Method comprises the step that produces ion beam, ion beam is adjusted to the step of the required depth of parallelism in the plane, measure the step of the direction of the ion beam of regulating in the described plane, wind perpendicular to the axis on described plane workpiece is tilted to step with respect to the implant angle of the ion beam direction of measuring, and the workpiece that tilts to implant angle implemented the step injected.
The step of regulating ion beam can comprise that it is parallel basically that ion beam is adjusted to ion trajectory.Generally, ion beam direction is different from the ion beam axis direction of ion implanter.Implant angle can be zero degree, and wherein the direction with workpiece is decided to be vertical with the ion beam direction of measuring.
Workpiece can comprise semiconductor wafer, and the step of determining the workpiece direction can comprise semiconductor wafer is tilted to implant angle with respect to the direction of the ion beam of measuring.
Method can further comprise the step of the not parallel angle of measuring ion beam.It is basic regulating the not parallel angle of mensuration that the step of ion beam can ion beam.The not parallel angle of the direction of ion beam and ion beam can be measured with moving iron beam forming device and one or more ion beam detector.
According to another aspect of the present invention, provide a kind of in workpiece the method for ion, comprise step: produce ion beam; Measure the parallel of ion beam in the plane; The ion beam of regulating in the described plane according to the depth of parallelism of measuring arrives the required depth of parallelism; Measure the ion beam direction of the ion beam of regulating in the described plane; Wind perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring; To tilting to the workpiece enforcement injection with respect to the implant angle of the ion beam direction of measuring.
According to another aspect of the present invention, provide the equipment of ion in workpiece.Equipment comprises the device that produces ion beam, measure the device of the depth of parallelism of the ion beam in the plane, the ion beam in the described plane is adjusted to the device of the required depth of parallelism according to the depth of parallelism of measuring, measure the device of the ion beam direction of regulating in the described plane, wind perpendicular to the axis on described plane workpiece is tilted to device with respect to the implant angle of the direction of the ion beam of measuring, and implement the device that injects to tilting to respect to the workpiece of the implant angle of the ion beam direction of measuring.
According to another aspect of the present invention, provide the equipment of ion in workpiece.Equipment comprises ion beam generator, be used for ion beam is adjusted to the ion optical element of the required depth of parallelism in the plane, be used for measuring the mensuration system of the ion beam direction of regulating in the described plane, and be used for winding perpendicular to the axis on described plane workpiece is tilted to leaning device with respect to the implant angle of the ion beam direction of measuring.To tilting to the workpiece enforcement injection with respect to the implant angle of the ion beam direction of measuring.
Ion optical element can comprise the ion trajectory of ion beam is adjusted to substantially parallel angle corrector magnet.The mensuration system can comprise moving iron beam forming device and one or more ion beam detector.Wherein implant angle is zero degree, and workpiece is tilted for vertical with the ion beam direction of measuring.
According to another aspect of the present invention, provide a kind of in workpiece the method for ion, comprising: produce ion beam; Measure the ion beam direction of the described ion beam in the plane; Wind perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring; The workpiece that tilts to implant angle is implemented to inject.
According to another aspect of the present invention, a kind of equipment that is used in workpiece ion is provided, comprising: the device that produces ion beam; Measure the device of the direction of the ion beam in the plane; Be used for winding perpendicular to the axis on described plane workpiece is tilted to device with respect to the implant angle of the ion beam direction of measuring, described injection is that the workpiece that tilts to implant angle is implemented.
According to another aspect of the present invention, a kind of equipment that is used in workpiece ion is provided, comprising: ion beam generator; Be used for to measure the mensuration system of ion beam direction of the ion beam on plane; Leaning device is used for winding perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring, and described injection is implemented the workpiece that tilts to implant angle.
Description of drawings
In order to understand better the present invention, with reference to appended diagram, these diagrams are with reference to this piece of writing of income, wherein:
Fig. 1 is the schematic diagram that is suitable for implementing ion implanter of the present invention.
Fig. 2 is the operation chart of demonstration angle corrector magnet in relatively large angle of bend and concentrated ion track situation.
Fig. 3 is the operation chart of demonstration angle corrector magnet in relatively little angle of bend and concentrated ion track situation.
Fig. 4 is the flow chart of regulating the process of ion implanter according to embodiment of the present invention.
Fig. 5 is the schematic diagram that is incident on the parallel ion beam on the wafer of inclination according to embodiment of the present invention.
Fig. 6 A-6C is the schematic diagram that the operation of ion beam parallel and ion beam direction is measured in demonstration.
Fig. 7 A-7C is respectively at the position of the ion beam situation intermediate ion beam forming device of Fig. 6 A-6C and the graph of a relation of ion beam detector output.
Fig. 8 is the schematic diagram that the prior art of ion beam parallel is regulated in demonstration.
Embodiment
The simple block diagram that is suitable for the example of concrete manifestation ion implanter of the present invention shows in Fig. 1.Ion beam generator 10 produces the ion beam of required kind, ion in the ion beam is accelerated to institute's energy requirement, to ion beam implementation quality/energy spectrometer to remove energy and mass defect thing, to provide energy with low content and the ion beam 12 with energy of mass defect thing.Scanning system 16, it comprises scanner 20 and angle corrector 24, ion beam 12 deflections is produced have parallel or near the ion beam 30 of parallel ion trajectories.Terminal position 32 is included in the range of ion beam 30 supporting semiconductor wafers 34 or other workpiece so that the platen 36 in the ion-implanted semiconductor wafer 34 of required kind.Ion implanter can comprise well-known other assemblies of technical staff in this field.For example, terminal position 32 generally also comprises the automatic crystal piece treating apparatus that wafer is introduced ion implanter and after injection wafer shifted out, dosimetry system, electrospray rifle etc.Be appreciated that and think that whole ranges that ion beam passes vacuumize during Implantation.
The primary clustering of ion beam generator 10 comprises ion beam source 40, source pass filter 42, acceleration/deceleration post 44 and mass spectrometer 50.Source pass filter 42 is preferably near ion beam source 40 location.Acceleration/deceleration post 44 is positioned between source pass filter 42 and the mass spectrometer 50.Mass spectrometer 50 comprises dipole analyzing magnet 52 and covers plate 54 with explanation hole 56.
In the embodiment of Fig. 1, terminal position 32 comprises ion beam parallel and direction detection system 80.Parallel and the direction of ion beam is measured in system's 80 following descriptions.In addition, terminal position 32 also comprises inclination mechanical device 84, is used for according to the ion beam 30 wafer support platen 36 that tilts.In one embodiment, inclination mechanical device 84 can be according to two rectangular axis wafer support platen 36 that tilts.
The example of work angle adjuster 24 is demonstrated in Fig. 2 and Fig. 3.As shown in the figure, pole piece 26 wedge shapes of angle corrector 24 or similarly setting, different like this ion trajectories has different range length during by the gap between the pole piece.In Fig. 2, used relatively high-intensity magnetic field.Ion trajectory has relatively large angle of bend, can concentrate when they leave angle corrector 24.In the example of Fig. 3, used relatively low intensive magnetic field.Ion trajectory has relatively little angle of bend, can disperse when they leave angle corrector 24.Like this, in the example of Fig. 2, ion beam 30 is positive-angle 72 with the vertical line with respect to wafer plane 70 and is incident on the wafer plane 70, and in the example of Fig. 3, ion beam 30 is negative angle 74 with the vertical line with respect to wafer plane 70 and is incident on the wafer plane 70.Be appreciated that and think, produce parallel or connect subparallel ion trajectory by magnetic field in the suitable adjusting angle adjuster 24.Yet, usually provide best parallel magnetic field not necessarily to be created in the vertical incidence of ion beam 30 on the wafer 70.
The flow chart of regulating the process of ion implanter and enforcement Implantation according to one embodiment of the invention shows in Fig. 4.In step 100, produce ion beam and also transmit by the ion beam line of ion implanter.As shown in FIG. 1, ion beam 12 has ion beam generator 12 to produce, and is sent to terminal position 32 by scanner 20 and angle corrector 24.
In step 102, the parallel of ion beam incided on the semiconductor wafer or measures on the plane on other workpiece or near this plane at ion beam.The example of measuring the technology of ion beam parallel is described below in conjunction with diagram 6A-6C and 7A-7C.The angle of parallel generally providing not-parallel ion beam is provided, particularly, the half-angle that provides ion beam to concentrate or disperse.Measure no-angle of parallel ion beam represents that ion beam trajectory is apart from the peak excursion of the intrafascicular heart ray of son.
In step 104, ion beam is adjusted to required parallel degree, usually loose or concentrated near zero.As shown in FIG. 5, the parallel of ion beam can change by the electric current that adjusting power supply 28 is applied on the magnetic coil.The electric current of regulating changes the magnetic field of angle corrector 24, and it has then changed the track of ion beam intermediate ion.When regulating power supply 28, implement regulating action by the parallel degree that monitors the ion beam 30 of measuring.Best when parallel when obtaining, the adjustment process of step 104 stops.Usually, ion beam can be regulated in 0.1 degree dispersion or concentrated half-angle.
Provide best parallel magnetic field usually to be different from the magnetic field of ion beam 30 orientations perpendicular to the wafer plane 70 of ion implanter terminal position.On the contrary, parallel ion beam 30 is incident on the wafer plane 70, as shown in Figure 5 with the angle 120 with respect to the vertical line of wafer plane 70.Be understandable that for the purpose of demonstrating, angle 120 has been exaggerated in Fig. 5.
In step 106, measure the direction of the ion beam of regulating.Particularly, measure the ion beam regulate with respect to the angle 120 of the vertical line of wafer plane 70.The example of measuring the technology of ion beam direction is described in conjunction with Fig. 6 A-6C and Fig. 7 A-7C below.In the plane of the scanning of ion beam and focusing, measure the direction of the parallel and ion beam of ion beam.
In step 108, the direction setting implant angle of the relative ion beam of regulating, specifically, with reference to angle 120.Set implant angle with inclination mechanical device 84 with respect to the wafer plane 70 inclination wafer support platens 36 of injector.When needs on wafer 34 during vertical incidence parallel sweep ion beam 30, the angle 122 that wafer support platen 36 is tilted to equate with angle 120.Like this, the wafer of platen 36 is vertical with parallel sweep ion beam 30.Needs non--situation of zero degree implant angle in, wafer support platen 36 is tilted with respect to the ion beam direction of measuring.The direction of the ion beam of measuring is used as the reference of setting incident angle like this.Non--zero degree implant angle can be by setting to be parallel to scanning or the direction inclination wafer of focussing plane, or by setting with the direction inclination wafer that is orthogonal to scanning or focussing plane.In each case, non--zero degree implant angle all is as reference take the ion beam direction measured.
In step 110, use the wafer support platen with required implant angle of determining with reference to the ion beam direction of measuring, and implement to inject with being adjusted to best parallel ion beam 30.Therefore, it is parallel to obtain the best at required implant angle.
With reference to figure 6A-6C and Fig. 7 A-7C the technical examples of measuring ion beam parallel and direction is described.Fig. 6 A-6C is that ion beam former and two schematic diagrames that the ion beam detector is measured different ions Shu Jinhang are used in demonstration.Fig. 7 A-7C is the diagram of the relation between the position of the output of demonstration ion beam detector and former.
As shown in Fig. 6 A-6C, use moving iron beam forming device 150 and interval ion beam detector 152 and 154 to measure ion beam parallel and direction, its corresponding ion beam parallel and the 80(Fig. 1 of direction detection system).Ion beam former 150 can be part blocks ions bundle and relative and the transversely movable any element of ion beam.For example, detector 152 and 154 can be the Faraday cup, and it can produce the electrical output signal corresponding to the incident ion bundle.When former 150 was crossing ion beam and moves, it had stopped the part ion bundle and has produced the ion beam shade.The ion beam shade crosses the output signal that detector 152 and 154 moved and produced negative sense output current impulse form.
As shown in Fig. 6 A, parallel sweep ion beam 160 vertical incidence are on wafer plane 70.As shown in Figure 7A, when the position of former 150 and each detector on time, detector 152 and 154 produces the output pulses.The position of former can be used for determining that ion beam 160 has parallel ion trajectories and vertical with wafer plane 70 when detector output pulse produced.
Referring to Fig. 6 B, disperse ion beam 162 vertical incidence on wafer plane 70.In this case, shown in Fig. 7 B, when the right at detector 152, the position of former 150, detector 152 produces the output pulses, and when the left side at detector 154, the position of former 150, detector 154 produces the output pulses.The position of former can be used to determine the dispersion angle of ion beam 162 when detector output pulse produces.Corresponding to concentrated ion bundle (not shown), when the left side at detector 152, the position of former 150, detector 152 produces the output pulses, and when the right at detector 154, the position of former 150, detector 154 produces the output pulses.The position of former can be used to determine the concentrated angle of ion beam when detector output pulse produces.
As shown in Fig. 6 C, parallel ion beam 164 incides on the wafer plane 70 with angle 166.In this case, as shown in Fig. 7 C, when the position of former 150 respectively during the left side in detector 152 and 154, detector 152 and 154 produces the output pulses.The position of former can be used to determine that the direction of ion beam is with parallel when detector output pulse produces.
Usually, ion beam can be that disperse or concentrated, and can have with respect to wafer plane is the ion beam angle of zero degree.When detector output pulse produces, can analyze former to determine the parallel and direction of ion beam.Parallel can being expressed as disperseed or concentrated half-angle, and ion beam direction can represent with respect to the vertical line of wafer plane 70.
Be appreciated that and think, measure within the scope of the invention the parallel and direction of ion beam and can use different technologies.In addition, the present invention is not subject to using the restriction of ion beam.For example the present invention can use ribbon ion beam, as disclosed in the U.S. Patent No. 5,350,926 of awarding to the people such as White on September 27th, 1994.
Although what this paper demonstrated and described is the preferred embodiment of the invention that at present consideration is thought, but the technical staff in this field be it is evident that, in the situation that does not deviate from the scope of the present invention that appended claims limits, can make multiple change and correction to embodiment.
Claims (32)
1. the method for an ion in workpiece may further comprise the steps:
Produce ion beam;
Ion beam is adjusted to the required depth of parallelism in the plane;
Measure the ion beam direction of the ion beam of regulating in the described plane;
Wind perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring; And
The workpiece that tilts to implant angle is implemented to inject.
2. method according to claim 1, wherein, the step of regulating ion beam comprises that it is parallel basically that the ion trajectory with ion beam is adjusted to.
3. method according to claim 2, wherein, the normal direction of workpiece differed an ion beam angle before ion beam direction and workpiece tilted.
4. method according to claim 1, wherein, the step of tilted workpiece comprises semiconductor wafer is tilted to implant angle with respect to the ion beam direction of measuring.
5. method according to claim 1, wherein, implant angle is zero degree, workpiece is tilted as perpendicular to the ion beam direction of measuring.
6. method according to claim 1 further comprises the step of measuring the not parallel angle of ion beam, and the step of wherein regulating ion beam is the basis that is determined as with the not parallel angle of ion beam.
7. method according to claim 6, wherein, the ion beam direction of ion beam and not parallel angle are by movably ion beam former and one or more ion beam detector are measured.
8. the method for an ion in workpiece comprises step:
Produce ion beam;
Measure the depth of parallelism of the ion beam in the plane;
The ion beam of regulating in the described plane according to the depth of parallelism of measuring arrives the required depth of parallelism;
Measure the ion beam direction of the ion beam of regulating in the described plane;
Wind perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring; And
To tilting to the workpiece enforcement injection with respect to the implant angle of the ion beam direction of measuring.
9. method according to claim 8, wherein, the step of regulating ion beam comprises that it is parallel basically that the ion trajectory with ion beam is adjusted to.
10. method according to claim 8, wherein, implant angle is zero degree, and workpiece is perpendicular to the ion beam direction of measuring.
11. method according to claim 8, wherein, ion beam direction and not parallel angle are by movably ion beam former and one or more ion beam detector are measured.
12. method according to claim 8, wherein, the step of tilted workpiece comprises the inclination semiconductor wafer.
13. the equipment of an ion in workpiece comprises:
Produce the device of ion beam;
Measure the device of the depth of parallelism of the ion beam in the plane;
Regulate ion beam in the described plane to the device of the required depth of parallelism according to the depth of parallelism of measuring;
Measure the device of the ion beam direction of the ion beam of regulating in the described plane;
Wind perpendicular to the axis on described plane workpiece is tilted to device with respect to the implant angle of the ion beam direction of measuring; And
Implement the device that injects to tilting to respect to the workpiece of the implant angle of the ion beam direction of measuring.
14. equipment according to claim 13, wherein, the device of described adjusting ion beam comprises that the ion trajectory with ion beam is adjusted to substantially parallel device.
15. equipment according to claim 13 wherein, is measured the device of parallelism of ion beam and the device of mensuration ion beam direction and is comprised removable ion beam former and one or more ion beam detector.
16. equipment according to claim 13, wherein, the device of tilted workpiece comprises the leaning device with respect to ion beam inclination semiconductor wafer.
17. the equipment of an ion in workpiece comprises:
Ion beam generator;
Regulate the ion optical element of the required depth of parallelism of ion beam in the plane;
Measure the mensuration system of the ion beam direction of the ion beam of regulating in the described plane; And
Wind perpendicular to the axis on described plane workpiece is tilted to leaning device with respect to the implant angle of the ion beam direction of measuring, wherein
To tilting to the workpiece enforcement injection with respect to the implant angle of the ion beam direction of measuring.
18. equipment according to claim 17, wherein, described ion optical element comprises that the ion trajectory with ion beam is adjusted to substantially parallel angle corrector magnet.
19. equipment according to claim 17, wherein, described mensuration system comprises removable ion beam former and one or more ion beam detector.
20. equipment according to claim 17, wherein, described leaning device is configured to semiconductor wafer.
21. the method for an ion in workpiece comprises:
Produce ion beam;
Measure the ion beam direction of the described ion beam in the plane;
Wind perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring; And
The workpiece that tilts to implant angle is implemented to inject.
22. method according to claim 21, wherein, described tilted workpiece comprises the inclination semiconductor wafer.
23. method according to claim 21, wherein, described tilted workpiece comprises around substantially perpendicular to the axis of the ion beam direction of the measuring semiconductor wafer that tilts.
24. method according to claim 21 further comprises and regulates described ion beam to the required depth of parallelism.
25. the equipment of an ion in workpiece comprises:
Produce the device of ion beam;
Measure the device of the direction of the ion beam in the plane; And
Be used for winding perpendicular to the axis on described plane workpiece is tilted to device with respect to the implant angle of the ion beam direction of measuring, wherein said injection is that the workpiece that tilts to implant angle is implemented.
26. equipment according to claim 25, wherein, the device that is used for tilted workpiece comprises be used to the leaning device that semiconductor wafer is tilted with respect to ion beam.
27. equipment according to claim 25, wherein, the device that is used for tilted workpiece comprises be used to making semiconductor wafer around the leaning device of cardinal principle perpendicular to the axis inclination of the ion beam direction of measuring.
28. equipment according to claim 25 further comprises the device that reaches the depth of parallelism of needs for the adjusting ion beam.
29. the equipment of an ion in workpiece comprises:
Ion beam generator;
Be used for to measure the mensuration system of ion beam direction of the ion beam on plane; And
Leaning device is used for winding perpendicular to the axis on described plane workpiece is tilted to implant angle with respect to the ion beam direction of measuring, and described injection is that the workpiece that tilts to implant angle is implemented.
30. equipment according to claim 29, wherein, described leaning device is configured to semiconductor wafer.
31. equipment according to claim 29, wherein, described leaning device is configured to make semiconductor wafer around substantially tilting perpendicular to the axis of the ion beam direction of measuring.
32. equipment according to claim 29 further comprises and regulates ion beam to the ion optical element of the required depth of parallelism.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN02106603A CN1441465A (en) | 2002-02-28 | 2002-02-28 | Method and device for regulating ion beam parallel in ion injection device |
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| Application Number | Title | Priority Date | Filing Date |
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| CN02106603A Division CN1441465A (en) | 2002-02-28 | 2002-02-28 | Method and device for regulating ion beam parallel in ion injection device |
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| CN102915899A true CN102915899A (en) | 2013-02-06 |
| CN102915899B CN102915899B (en) | 2016-03-16 |
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| CN201210287489.6A Expired - Lifetime CN102915899B (en) | 2002-02-28 | 2002-02-28 | The method and apparatus that ion beam is parallel is regulated in ion implanter |
| CN02106603A Pending CN1441465A (en) | 2002-02-28 | 2002-02-28 | Method and device for regulating ion beam parallel in ion injection device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104916518A (en) * | 2014-03-14 | 2015-09-16 | 斯伊恩股份有限公司 | Ion implanter, beam energy measuring device, and method of measuring beam energy |
| CN107221485A (en) * | 2017-06-02 | 2017-09-29 | 东莞帕萨电子装备有限公司 | A kind of ion beam current adjusting means |
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| CN102201321B (en) * | 2010-03-24 | 2013-04-10 | 上海凯世通半导体有限公司 | Ion implantation system and method |
| CN102376518B (en) * | 2010-08-17 | 2014-07-09 | 上海凯世通半导体有限公司 | Ion implantation system and methods |
| US8895944B2 (en) * | 2012-01-20 | 2014-11-25 | Advanced Ion Beam Technology, Inc. | Scan head and scan arm using the same |
| CN104867803B (en) * | 2014-09-11 | 2017-10-13 | 中国电子科技集团公司第四十八研究所 | A kind of 30 ° of parallel lens for ion implantation apparatus |
| CN107154346B (en) * | 2017-05-19 | 2021-03-16 | 京东方科技集团股份有限公司 | Film doping method, thin film transistor and manufacturing method thereof |
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| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US6255662B1 (en) * | 1998-10-27 | 2001-07-03 | Axcelis Technologies, Inc. | Rutherford backscattering detection for use in Ion implantation |
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- 2002-02-28 CN CN201210287489.6A patent/CN102915899B/en not_active Expired - Lifetime
- 2002-02-28 CN CN02106603A patent/CN1441465A/en active Pending
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| US5350926A (en) * | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
| US6255662B1 (en) * | 1998-10-27 | 2001-07-03 | Axcelis Technologies, Inc. | Rutherford backscattering detection for use in Ion implantation |
| JP2001229873A (en) * | 1999-10-12 | 2001-08-24 | Applied Materials Inc | Ion implantation device having inspection mechanism of wafer angle and faraday alignment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104916518A (en) * | 2014-03-14 | 2015-09-16 | 斯伊恩股份有限公司 | Ion implanter, beam energy measuring device, and method of measuring beam energy |
| CN104916518B (en) * | 2014-03-14 | 2018-09-28 | 斯伊恩股份有限公司 | Ion implantation apparatus, beam energy measurement device and beam energy assay method |
| CN107221485A (en) * | 2017-06-02 | 2017-09-29 | 东莞帕萨电子装备有限公司 | A kind of ion beam current adjusting means |
| CN107221485B (en) * | 2017-06-02 | 2019-02-05 | 东莞帕萨电子装备有限公司 | A kind of ion beam current regulating device |
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| CN102915899B (en) | 2016-03-16 |
| CN1441465A (en) | 2003-09-10 |
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