CN102912448B - Device for quickly annealing semiconductor silicon chip - Google Patents
Device for quickly annealing semiconductor silicon chip Download PDFInfo
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- CN102912448B CN102912448B CN201210337124.XA CN201210337124A CN102912448B CN 102912448 B CN102912448 B CN 102912448B CN 201210337124 A CN201210337124 A CN 201210337124A CN 102912448 B CN102912448 B CN 102912448B
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Abstract
The invention discloses a device for quickly annealing a semiconductor silicon chip, which comprises a support bracket, a movable sliding plate, a slide rail, a touch switch and a cooling fan, wherein the support bracket is used for receiving the semiconductor silicon chip from a heat treatment furnace; the movable sliding plate is fixedly connected with the support bracket; the slide rail is matched with the movable sliding plate; the touch switch is arranged on the slide rail; the switching of the cooling fan is controlled by the touch switch; and when the semiconductor silicon chip moves to the middle of the air flow of the cooling fan along with the movable sliding plate, the touch switch controls the cooling fan to start. The device disclosed by the invention can effectively implement quick annealing, can be used in the heat treatment annealing process in the actual semiconductor silicon chip processing and manufacturing process, and has the advantages of simple structure, simple operation and high efficiency.
Description
Technical field
The invention belongs to semi-conductor silicon chip and manufacture manufacture field, relate to a kind of Quick annealing device being applicable to semiconductor silicon sheet heat treatment process.
Background technology
Czochralski silicon monocrystal is that polysilicon is placed on high temperature melting in high-purity silica pot, because high-purity crucible directly contacts with molten silicon and is in the high temperature of more than 1450 degrees Celsius, under high temperature, SiO2 can grow SiO with molten pasc reaction, and be partially soluble in molten silicon, along with crystal growth enters crystals, form Oxygen in silicon.
Meanwhile, the growth of direct silicon mono-crystal is that slow solidification grows out from high-temperature fusant, and the motivating force of crystal growth mainly comes from the condensate depression of thermograde formation, therefore needs through one section of thermal history in the growth, process of cooling of crystal.Oxygen impurities in silicon, when low-temperature heat treatment, can produce alms giver's effect, and the resistivity of N-shaped silicon crystal is declined, and the resistivity of p-type silicon crystal rises, and when alms giver's effect is serious, p-type silicon crystal can be made to be converted into N-shaped, this is alms giver's effect of oxygen.Alms giver's effect of oxygen can be divided into two kinds of situations, has different character, and one generates about 350 ~ 500 DEG C scopes, is called Thermal donor; One is formed about 550 ~ 800 DEG C temperature ranges, is called new promoted university.
Direct silicon mono-crystal experienced by one section of thermal history being drawn to come out of the stove, and inevitably defines Thermal donor at 350 ~ 500 DEG C.It is generally acknowledged, 450 DEG C is the most significant temp that in silicon, Thermal donor is formed, and except annealing temperature, the initial oxygen concentration in silicon has maximum effect to the synthesis speed of Thermal donor and concentration, and initial oxygen concentration is higher, and Thermal donor concentration is higher, and its synthesis speed is also faster.New promoted university can reach maximum value about 650 DEG C concentration, compares with Thermal donor, and its synthesis speed is slow, the time that general needs are longer, and its concentration is an order of magnitude lower than Thermal donor also.
Resistivity is the most important parameters of semi-conductor silicon chip, different resistivity silicon chip may be used for the different size device making same device, also the device making different size may be used for, than if any silicon chip for making TVS device, have due to make vehicle rectifier tube, have for making general-purpose diode, have for making electricity-saving lamp chip etc.For downstream components source mill, resistivity is vital to shelves and resistivity verity, and it directly determines device technology, type, the purposes that silicon chip can make.If there is the incomplete or nonheat-treated silicon chip of thermal treatment in a certain resistivity gear, the device parameters obtained when element manufacturing will depart from original setting completely, causes serious abnormal quality.Therefore it is very crucial for heat-treating also short annealing elimination Thermal donor effect to silicon chip.
Meanwhile, true resistance rate controls also to be vital to the doping of actual single crystal growing.For czochralski silicon monocrystal, resistivity presents the low distribution of head height tail, because the singularity of single crystal growing resistivity continuous distribution and the unicity contradiction of customer requirement exist, the head resistivity how arranging single crystal growing is very crucial, and therefore the true resistance rate of monocrystalline print end to end is also focal point and the control point of silicon chip manufacture and processing industry.
For czochralski silicon monocrystal, want to obtain true resistance rate and have to pass through 550-800 degree Celsius of heat treatment process, the principle of heat treatment process eliminates Thermal donor effect, and do not produce new promoted university effect, the key of thermal treatment process is that silicon single-crystal after will making annealing or single-chip are jumped over 350 ~ 500 DEG C of temperature provinces, particularly 450 DEG C of temperature fast.If can not jump over 350 ~ 500 DEG C of temperature provinces fast, Thermal donor will be formed again, affect silicon single-crystal and return to true resistance rate.Therefore the core process that short annealing is heat treatment link how is realized.
Current existing general thermal treatment process silicon chip is placed in heat treatment furnace 550-800 DEG C of constant temperature process for some time, then takes out juxtaposition fast under fan, use air short annealing.In actually operating, after silicon chip leaves heat treatment furnace, temperature just starts to decline, and this proposes higher requirement to operator's transferring silicon chip time, if shift slower, silicon chip will stop 350 ~ 500 DEG C of temperature provinces, and Thermal donor will be formed again, affect silicon single-crystal and return to true resistance rate.
Summary of the invention
Technical problem to be solved by this invention is just to provide a kind of device for semi-conductor silicon chip short annealing, and for semi-conductor silicon chip heat-treatment of annealing provides a kind of easy and simple to handle, exploitativeness is strong, the Quick annealing device of successful.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of device for semi-conductor silicon chip short annealing, it is characterized in that: comprise the supporting bracket accepting heat treatment furnace out semi-conductor silicon chip, the moving slide board be fixedly linked with supporting bracket, the rail plate coordinated with moving slide board, this device also comprises is located at the touch switch on rail plate and the cooling fan by this touch switch trip switch, when semi-conductor silicon chip with moving slide board move to be in cooling fan distinguished and admirable medium position time, touch switch controlled cooling model fan is opened.
As preferably, to be cross section be the sheet material of circular arc to described supporting bracket and supporting bracket has identical radian with the fire door Lower Half of heat treatment furnace, and supporting bracket height is consistent with heat-treatment furnace open height.
As preferably, described supporting bracket is high purity quartz plate or stainless steel plate.
As preferably, described rail plate is vertical with supporting bracket, and rail plate sidepiece is located at by cooling fan and wind direction is vertical with rail plate.
As preferably, described semi-conductor silicon chip drops on supporting bracket with quartz boat, and semi-conductor silicon chip height can make this semi-conductor silicon chip just in time be in the distinguished and admirable central position of cooling fan.
As preferably, described cooling fan is DC fan.
Semi-conductor silicon chip is after heat treatment furnace thermal treatment completes, semi-conductor silicon chip is released fire door together with quartz boat and transfers on supporting bracket, moving slide board is pushed to DC fan fast by rail plate, touch switch is triggered when moving slide board is shifted onto, DC fan starts, now silicon chip is just in DC fan air port, realizes quick air-cooled annealing.Thus the present invention has the following advantages:
1, semi-conductor silicon chip Quick annealing device provided by the invention and method effectively can realize short annealing, can be used in the heat-treatment of annealing link in the processing of practical semiconductor silicon chip and manufacturing processed.
2, semi-conductor silicon chip Quick annealing device provided by the invention and method have structure simply, easy and simple to handle, the advantage that efficiency is higher.
3, semi-conductor silicon chip Quick annealing device provided by the invention and method have strong industrialization operability, are conducive to enhancing productivity.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the invention will be further described:
Fig. 1 is structural representation of the present invention.
Embodiment
The embodiment of a kind of device for semi-conductor silicon chip short annealing of the present invention is illustrated below in conjunction with Fig. 1, comprise the supporting bracket 4 accepting heat treatment furnace 1 out semi-conductor silicon chip 2, the moving slide board 5 be fixedly linked with supporting bracket 4, the rail plate 6 coordinated with moving slide board 5, this device also comprises is located at the touch switch 8 on rail plate and the cooling fan 7 by this touch switch trip switch, when semi-conductor silicon chip with moving slide board move to be in cooling fan distinguished and admirable medium position time, touch switch controlled cooling model fan is opened.
Described supporting bracket 4 is the sheet material of circular arc and supporting bracket has identical radian with the fire door Lower Half of heat treatment furnace for cross section, and supporting bracket height is consistent with heat-treatment furnace open height.Described semi-conductor silicon chip drops on supporting bracket with quartz boat 3, and semi-conductor silicon chip height can make this semi-conductor silicon chip 2 just in time be in the distinguished and admirable central position of cooling fan.Namely supporting bracket height is a little less than DC fan center, makes semi-conductor silicon chip to be annealed be in the distinguished and admirable center of DC fan, is conducive to annealing.
Described supporting bracket is high purity quartz plate or stainless steel plate.Heat treatment furnace controls thermal treatment temp by temperature control instrument.
Described rail plate is vertical with supporting bracket, and rail plate sidepiece is located at by cooling fan and wind direction is vertical with rail plate.Certainly, rail plate also can be parallel with supporting bracket, and such cooling fan can be located at rail plate end, and cooling fan just moves the direction near coming to supporting bracket.
Described cooling fan is DC fan.Conventional fan can certainly be adopted.DC fan annealing effect is better.
The using method of this device: be 1. placed on thermal treatment sole by device, and adjustment height, confirm that supporting bracket is consistent with heat treatment furnace open height; 2., after heat treatment time arrives, supporting bracket is placed in thermal treatment fire door together with moving slide board; 3. quartz boat complete for thermal treatment pulled out fast with high purity quartz rod and is placed on supporting bracket; 4. one hand promotes moving slide board fast, makes it slide to DC fan fast with silicon chip to be annealed; 5. moving slide board triggers touch switch, and DC fan is started working, and now silicon chip to be annealed is in the distinguished and admirable middle part of DC fan, is conducive to short annealing; 6., when silicon temperature arrives envrionment temperature, generally about need 30 minutes, can silicon chip be taken off, be placed on specified location; 7. repeat 3-7 step and can realize repeatedly thermal treatment short annealing.
The device of above-mentioned embodiment and using method is adopted to carry out head of single crystal print thermal treatment short annealing, N<111>, head target resistivity during 3 cun of single crystal growings is that (doping content is about 1.32E14atoms/cm to 33.0 ohmcms
3), before non-thermal treatment, its resistivity of test is 9.2 ohmcms, differs larger with true resistance rate.This device is adopted to take out also short annealing 30 minutes after 45 minutes according to constant temperature 650 degrees Celsius of protection of inert gas process in 45 minutes; resistivity measurement is carried out after test condition to be achieved; obtain test value 32.6 ohmcm, substantially close with target resistivity, basically identical with actual doping content.Remarks: test condition is 23 degrees Celsius, 60%RH.
Adopt above-described embodiment scheme, according to head print and actual resistivity distribution situation, 100pcs print is chosen in (30-35 ohmcm) in electrical resistivity range, wherein adopt this annealing device after first group of 50pcs thermal treatment, naturally cooling after second group of 50pcs thermal treatment, test average resistivity respectively, obtain following result: first group of average resistivity is 32.94 ohmcms; Second group of average resistivity is 23.62 ohmcms.
Quick annealing device provided by the invention and method for annealing effectively can eliminate Oxygen in silicon alms giver effect as can be seen from the comparison result, obtain silicon chip true resistance rate.
Claims (6)
1. the device for semi-conductor silicon chip short annealing, it is characterized in that: comprise the supporting bracket (4) accepting heat treatment furnace (1) out semi-conductor silicon chip (2), the moving slide board (5) be fixedly linked with supporting bracket (4), the rail plate (6) coordinated with moving slide board (5), this device also comprises is located at the touch switch (8) on rail plate and the cooling fan (7) by this touch switch trip switch, when semi-conductor silicon chip with moving slide board move to be in cooling fan distinguished and admirable medium position time, touch switch controlled cooling model fan is opened.
2. the device for semi-conductor silicon chip short annealing according to claim 1, it is characterized in that: to be cross section be the sheet material of circular arc to described supporting bracket and supporting bracket has identical radian with the fire door Lower Half of heat treatment furnace, and supporting bracket height is consistent with heat-treatment furnace open height.
3. the device for semi-conductor silicon chip short annealing according to claim 2, is characterized in that: described supporting bracket is high purity quartz plate or stainless steel plate.
4. the device for semi-conductor silicon chip short annealing according to claim 2, it is characterized in that: described rail plate is vertical with supporting bracket, rail plate sidepiece is located at by cooling fan and wind direction is vertical with rail plate.
5. the device for semi-conductor silicon chip short annealing according to claim 1, it is characterized in that: described semi-conductor silicon chip drops on supporting bracket with quartz boat (3), semi-conductor silicon chip height can make this semi-conductor silicon chip just in time be in the distinguished and admirable central position of cooling fan.
6. the device for semi-conductor silicon chip short annealing according to claim 1, is characterized in that: described cooling fan is DC fan.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210337124.XA CN102912448B (en) | 2012-09-13 | 2012-09-13 | Device for quickly annealing semiconductor silicon chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210337124.XA CN102912448B (en) | 2012-09-13 | 2012-09-13 | Device for quickly annealing semiconductor silicon chip |
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| CN102912448A CN102912448A (en) | 2013-02-06 |
| CN102912448B true CN102912448B (en) | 2015-03-18 |
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| CN109137068B (en) * | 2018-08-09 | 2020-10-16 | 锦州神工半导体股份有限公司 | Annealing method of monocrystalline silicon wafer |
| CN113721076A (en) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | Method for measuring resistivity of silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2298265Y (en) * | 1997-01-03 | 1998-11-25 | 杨盛笔 | Quick annealing device |
| CN201436685U (en) * | 2009-05-11 | 2010-04-07 | 沈阳汉锋新能源技术有限公司 | Special annealing furnace for amorphous silicon cell |
| CN201605354U (en) * | 2009-12-04 | 2010-10-13 | 洛阳鸿泰半导体有限公司 | Parallel air current device used for silicon wafer fast cooling process |
| CN202730307U (en) * | 2012-09-13 | 2013-02-13 | 浙江长兴众成电子有限公司 | Device for rapid annealing of semiconductor silicon chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855087B2 (en) * | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2298265Y (en) * | 1997-01-03 | 1998-11-25 | 杨盛笔 | Quick annealing device |
| CN201436685U (en) * | 2009-05-11 | 2010-04-07 | 沈阳汉锋新能源技术有限公司 | Special annealing furnace for amorphous silicon cell |
| CN201605354U (en) * | 2009-12-04 | 2010-10-13 | 洛阳鸿泰半导体有限公司 | Parallel air current device used for silicon wafer fast cooling process |
| CN202730307U (en) * | 2012-09-13 | 2013-02-13 | 浙江长兴众成电子有限公司 | Device for rapid annealing of semiconductor silicon chip |
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Owner name: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. Free format text: FORMER NAME: ZHEJIANG COWIN ELECTRONICS CO., LTD. |
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Address after: 313100 No. 1299, front East Street, Changxing County County, Zhejiang, Huzhou Patentee after: ZHEJIANG ZHONGJING TECHNOLOGY CO., LTD. Address before: 313100 No. 1299, front East Street, Changxing County County, Zhejiang, Huzhou Patentee before: Zhejiang Cowin Electronics Co., Ltd. |