CN102903534B - Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification - Google Patents

Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification Download PDF

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CN102903534B
CN102903534B CN201210440036.2A CN201210440036A CN102903534B CN 102903534 B CN102903534 B CN 102903534B CN 201210440036 A CN201210440036 A CN 201210440036A CN 102903534 B CN102903534 B CN 102903534B
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CN102903534A (en
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胡俊青
李文尧
邹儒佳
李高
徐开兵
孙彦刚
王滕
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Donghua University
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Abstract

The present invention relates to a kind of Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, comprising: (1) prepares presoma Co 3o 4nano-chip arrays; (2) utilize plasma sputtering at above-mentioned Co 3o 4the surperficial evaporation of nano-chip arrays, obtains the Co of Au plastic film covering 3o 4nano-chip arrays; (3) by the Co of above-mentioned Au plastic film covering 3o 4nano-chip arrays is electrochemical deposition under 0.9V current potential, by MnO 2be coated on the Co of Au plastic film covering 3o 4the surface of nano-chip arrays; After having reacted, cleaning, dry, calcining, to obtain final product.Preparation method of the present invention is simple to operate, does not need special installation; Co obtained by the present invention 3o 4-Au-MnO 2nano-chip arrays is evenly distributed, and be three-dimensional classification heterostructure, electrochemical performance, has a extensive future.

Description

Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification
Technical field
The invention belongs to the preparation field of super capacitor material, particularly a kind of Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification.
Background technology
As everyone knows, the energy is the material base of human survival and development, and current facing mankind serious energy crisis.The energy saver of research and development energy storage and recovery is one of effective way solving energy problem.Electrochemical capacitor is as a kind of novel energy-storing device, advantages such as having the energy density more much bigger than traditional capacitor and the power density more much higher than battery, energy collecting metric density is high, power density is high, have extended cycle life, charging interval short and storage period is long.In automobile, electric power, railway, communication, national defence, consumer electronic product etc., there are huge using value and market potential, cause the broad interest of domestic and international scientist.The electrode material being widely used in ultracapacitor at present has porous carbon material, transition metal oxide and conducting polymer (P.Simonetal, Nat.Mater.2008,7,845.).
In these materials, the cobaltosic oxide in transition metal oxide and manganese dioxide are considered to the selection of most attraction, because it has cheap, environmental friendliness and superior capacitive property, cause the extensive concern of vast researcher.Cobaltosic oxide and the manganese oxide material of current various pattern are produced all, and method is various, such as chemical precipitation method, solid phase method, sol-gal process etc. (R.B.Rakhietal, NanoLett.2012,12,2559.).But the low electric conductivity of Mn oxide limits its application in high-performance super capacitor.In order to improve desired properties, the preparation of metals composite construction nano material introducing excellent electric conductivity causes the research interest of scientist gradually.
Existing people with complicated approach using Au as conductive layer deposition MnO 2prepare WO 3-x-Au-MnO 2composite material, but ratio capacitance is still not enough to meet the need of market.
Therefore, need development one method simply and easily, prepare eco-friendly, to have excellent properties multi-element transition metal oxides super capacitor material.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, the method is simple to operate, does not need special installation, obtained three-dimensional classification heterostructure, the Co of electrochemical performance 3o 4-Au-MnO 2nano-chip arrays is evenly distributed.
A kind of Co of the present invention 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, comprising:
(1) by nickel foam at the Co (NO containing DMSO 3) 2in the aqueous solution, under-1V current potential, electrochemical deposition prepares Co (OH) 2nano-chip arrays, then calcines, and obtains presoma Co 3o 4nano-chip arrays;
(2) utilize plasma sputtering at above-mentioned Co 3o 4the surperficial evaporation of nano-chip arrays, forms the film of layer of Au particle composition, obtains the Co of Au plastic film covering 3o 4nano-chip arrays;
(3) by the Co of above-mentioned Au plastic film covering 3o 4nano-chip arrays is placed in the Mn (CH containing DMSO 3cOO) 2and CH 3cOONH 4mixed aqueous solution in, then electrochemical deposition under 0.9V current potential, by MnO 2be coated on the Co of Au plastic film covering 3o 4the surface of nano-chip arrays; After having reacted, by dry after the product cleaning that obtains, finally calcine, obtain Co 3o 4-Au-MnO 2the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification.
Calcining described in step (1) for calcine in Muffle furnace.
Co (the NO containing DMSO described in step (1) 3) 2co (NO in the aqueous solution 3) 2concentration be 0.01 ~ 0.05mol/L.
The time of the evaporation described in step (2) is 0.5 ~ 3min.
Mn (the CH containing DMSO described in step (3) 3cOO) 2and CH 3cOONH 4mixed aqueous solution in Mn (CH 3cOO) 2concentration be 0.005 ~ 0.02mol/L, CH 3cOONH 4concentration be 0.01 ~ 0.05mol/L.
Cleaning described in step (3) is for use ethanol, washed with de-ionized water 1-3 time respectively.
Drying described in step (3) is in 60-80 DEG C of dry 3-5h.
Calcining described in step (3) for calcine 2h. in Muffle furnace
The Co that the present invention obtains 3o 4-Au-MnO 2material is the three-dimensional classification heterostructure of nanometer.
The concrete behaviour of the plasma sputtering adopted in the present invention is: gold target is put into target groove by (1), is placed on rotary sample platform by needs surface-treated sample, and closed sample stage rotary switch, covers cloche; (2) mechanical pump is opened, by vacustat at 7-10Pa, closed ion current switch, rotary high pressure knob, regulates high pressure, to make in experimentation current stabilization at 10mA; (3) close high pressure at the end of sedimentation time, disconnect ion current switch, finally open inflation knob and make cloche internal pressure return to atmospheric pressure, finally take out sample.
The present invention under electrochemical deposition technique condition, the precursor synthesis array type sheet Co prepared under utilizing different condition 3o 4-Au-MnO 2nano material, preparation structure is unique, the Co of electrochemical performance 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification.
The present invention, on the basis without follow-up use low-surface energy substance modified product surface, with common mineral solution for raw material, by the experiment parameter such as concentration, time, temperature of reactant in regulation and control electrochemical deposition process, prepares three-dimensional Co 3o 4-Au-MnO 2nano-chip arrays, obtains the Co of three-dimensional classification heterostructure that large area is evenly distributed, electrochemical performance 3o 4-Au-MnO 2nano-chip arrays.
The present invention passes through simple electrochemical deposition technique, the three-dimensional classification heterostructure that success is synthesized, the Co of electrochemical performance 3o 4-Au-MnO 2nano-chip arrays, will explore the technology of preparing of new electrode materials, screening more preferably, high specific capacitance or volume energy density, high charge-discharge power density electrode material, improve the performance of electrochemical capacitor, solve energy scarcity aspect and contribute.
The present invention, by electrochemical deposition and plasma spraying techniques, has synthesized Co 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification, the Co of preparation 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification has good electrochemical stability, circulates and does not substantially have capacitance loss 5000 times.Because the product slates of preparation is even, regular appearance, and the material that just can be obtained three-dimensional classification heterostructure, electrochemical performance by simple synthetic method.Therefore, the Co for preparing of the present invention 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification has huge application potential in ultracapacitor, lithium ion battery material etc.
Beneficial effect;
(1) preparation method of the present invention is simple to operate, does not need special installation;
(2) Co obtained by the present invention 3o 4-Au-MnO 2nano-chip arrays is evenly distributed, and be three-dimensional classification heterostructure, electrochemical performance, can expand preparation method and the application of electrochemical capacitor material greatly.
Accompanying drawing explanation
Fig. 1 is the heterogeneous Co of three-dimensional classification prepared by the present invention 3o 4-Au-MnO 2the scanning electron microscopic picture of nano-chip arrays;
Fig. 2 is the heterogeneous Co of three-dimensional classification prepared by the present invention 3o 4-Au-MnO 2the XPS picture of nano-chip arrays;
Fig. 3 is the heterogeneous Co of three-dimensional classification prepared by the present invention 3o 4-Au-MnO 2the cyclical stability test picture of nano-chip arrays.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
The present invention adopts electrochemical deposition technique, and by allocating specific reaction solution, be immersed in reaction solution using the nickel foam through removing surface oxide layer as work electrode, deposition obtains Co 3o 4evaporation Au film after presoma, then electrochemical deposition certain hour in another solution, the Co of preparation electrochemical performance 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification.
Embodiment 1
(1) nickel foam is utilized containing 1%(volumetric concentration) Co (NO of the 0.02mol/L of DMSO 3) 2in the aqueous solution, under-1V, electrochemical deposition prepares Co (OH) 2nano-chip arrays, then calcines 2h at 250 DEG C in Muffle furnace, obtains black Co 3o 4nano-chip arrays;
(2) Co that plasma sputtering is obtaining is recycled 3o 4nanometer sheet surface evaporation 0.5min, obtains the Co of Au plastic film covering 3o 4nano-chip arrays presoma;
(3) above-mentioned presoma is placed in containing 1%(volumetric concentration) 0.005mol/LMn (CH of DMSO 3cOO) 2and 0.01mol/LCH 3cOONH 4mixed aqueous solution in, then use electrochemical deposition method at Co 3o 4-Au nanometer sheet surface potentiostatic electrodeposition 2min under 0.9V current potential, then used by product ethanol, deionized water rinsing for several times respectively, 60-80 DEG C, dry 3-5h, then calcine 2h at 200 DEG C, obtain Co in Muffle furnace 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification.
Embodiment 2
(1) nickel foam is utilized containing 3%(volumetric concentration) Co (NO of the 0.03mol/L of DMSO 3) 2in the aqueous solution, under-1V, electrochemical deposition prepares Co (OH) 2nano-chip arrays, then calcines 2h at 250 DEG C in Muffle furnace, obtains black Co 3o 4nano-chip arrays;
(2) Co that plasma sputtering is obtaining is recycled 3o 4nanometer sheet surface evaporation 1min, obtains the Co of Au plastic film covering 3o 4nano-chip arrays presoma;
(3) above-mentioned presoma is placed in containing 5%(volumetric concentration) 0.01mol/LMn (CH of DMSO 3cOO) 2and 0.02mol/LCH 3cOONH 4mixed aqueous solution in, then use electrochemical deposition method at Co 3o 4-Au nanometer sheet surface potentiostatic electrodeposition 5min under 0.9V current potential, then used by product ethanol, deionized water rinsing for several times respectively, 60-80 DEG C, dry 3-5h, then calcine 2h at 200 DEG C, obtain Co in Muffle furnace 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification.
Embodiment 3
Utilize nickel foam containing 5%(volumetric concentration) Co (NO of the 0.05mol/L of DMSO 3) 2in the aqueous solution, under-1V, electrochemical deposition prepares Co (OH) 2nano-chip arrays, then calcines 2h at 250 DEG C in Muffle furnace, obtains black Co 3o 4nano-chip arrays;
The Co that recycling plasma sputtering is obtaining 3o 4nanometer sheet surface evaporation 1.5min, obtains the Co of Au plastic film covering 3o 4nano-chip arrays presoma;
Above-mentioned presoma is placed in containing 10%(volumetric concentration) 0.005mol/LMn (CH of DMSO 3cOO) 2and 0.02mol/LCH 3cOONH 4mixed aqueous solution in, then use electrochemical deposition method at Co 3o 4-Au nanometer sheet surface potentiostatic electrodeposition 10min under 0.9V current potential, then used by product ethanol, deionized water rinsing for several times respectively, 60-80 DEG C, dry 3-5h, then calcine 2h at 200 DEG C, obtain Co in Muffle furnace 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification.
Embodiment 4
(1) nickel foam is utilized containing 2%(volumetric concentration) Co (NO of the 0.02mol/L of DMSO 3) 2in the aqueous solution, under-1V, electrochemical deposition prepares Co (OH) 2nano-chip arrays, then calcines 2h at 250 DEG C in Muffle furnace, obtains black Co 3o 4nano-chip arrays;
(2) Co that plasma sputtering is obtaining is recycled 3o 4nanometer sheet surface evaporation 3min, obtains the Co of Au plastic film covering 3o 4nano-chip arrays presoma;
(3) above-mentioned presoma is placed in containing 5%(volumetric concentration) 0.02mol/LMn (CH of DMSO 3cOO) 2and 0.05mol/LCH 3cOONH 4mixed aqueous solution in, then use electrochemical deposition method at Co 3o 4-Au nanometer sheet surface potentiostatic electrodeposition 20min under 0.9V current potential, then used by product ethanol, deionized water rinsing for several times respectively, 60-80 DEG C, dry 3-5h, then calcine 2h at 200 DEG C, obtain Co in Muffle furnace 3o 4-Au-MnO 2the heterogeneous nano-chip arrays of three-dimensional classification.

Claims (8)

1. a Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, comprising:
(1) by nickel foam at the Co (NO containing DMSO 3) 2in the aqueous solution, under-1V current potential, electrochemical deposition prepares Co (OH) 2nano-chip arrays, then calcines, and obtains presoma Co 3o 4nano-chip arrays;
(2) utilize plasma sputtering at above-mentioned Co 3o 4the surperficial evaporation of nano-chip arrays, forms the film of layer of Au particle composition, obtains the Co of Au plastic film covering 3o 4nano-chip arrays;
(3) by the Co of above-mentioned Au plastic film covering 3o 4nano-chip arrays is placed in the Mn (CH containing DMSO 3cOO) 2and CH 3cOONH 4mixed aqueous solution in, then electrochemical deposition under 0.9V current potential, by MnO 2be coated on the Co of Au plastic film covering 3o 4the surface of nano-chip arrays; After having reacted, by dry after the product cleaning that obtains, finally calcine, to obtain final product.
2. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the calcining described in step (1) for calcine in Muffle furnace.
3. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the Co (NO containing DMSO described in step (1) 3) 2co (NO in the aqueous solution 3) 2concentration be 0.01 ~ 0.05mol/L.
4. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the time of the evaporation described in step (2) is 0.5 ~ 3min.
5. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the Mn (CH containing DMSO described in step (3) 3cOO) 2and CH 3cOONH 4mixed aqueous solution in Mn (CH 3cOO) 2concentration be 0.005 ~ 0.02mol/L, CH 3cOONH 4concentration be 0.01 ~ 0.05mol/L.
6. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the cleaning described in step (3) is for use ethanol, washed with de-ionized water 1-3 time respectively.
7. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the drying described in step (3) is in 60-80 DEG C of dry 3-5h.
8. a kind of Co according to claim 1 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification, is characterized in that: the calcining described in step (3) for calcine 2h in Muffle furnace.
CN201210440036.2A 2012-11-06 2012-11-06 Co 3o 4-Au-MnO 2the preparation method of the heterogeneous nano-chip arrays super capacitor material of three-dimensional classification Expired - Fee Related CN102903534B (en)

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CN103500668B (en) * 2013-09-30 2016-01-13 武汉理工大学 MoO 2/ Co (OH) 2classification composite nano materials and its preparation method and application
CN109205681B (en) * 2018-09-12 2021-04-09 嘉兴学院 Three-dimensional hierarchical structure metal oxide and preparation method thereof
CN110223847A (en) * 2019-06-11 2019-09-10 江苏先创新能源有限公司 A kind of electrode material for super capacitor and preparation method
CN110993371B (en) * 2019-11-22 2021-09-03 南京理工大学 LiMnxOy@ C three-dimensional nanosheet array, preparation method and application thereof
CN115692669A (en) * 2022-11-17 2023-02-03 华中科技大学 Embedded conversion dual-mechanism heterogeneous interface material, preparation method and application

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101971392A (en) * 2008-02-29 2011-02-09 纳诺泰克图有限公司 Mesoporous materials for electrodes
CN102082268A (en) * 2011-01-06 2011-06-01 哈尔滨工程大学 In-situ preparation method for anode material of Ni(OH)2 nickel-metal hydride (NI-MH) battery through foamed nickel

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101971392A (en) * 2008-02-29 2011-02-09 纳诺泰克图有限公司 Mesoporous materials for electrodes
CN102082268A (en) * 2011-01-06 2011-06-01 哈尔滨工程大学 In-situ preparation method for anode material of Ni(OH)2 nickel-metal hydride (NI-MH) battery through foamed nickel

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Growth of ultrathin mesoporous Co3O4 nanosheet arrays on Ni foam for high-performance electrochemical capacitors";Changzhou Yuan et al.;《Energy & Environmental Science》;20120423;第5卷(第7期);第7884页第2栏第6-19行 *
Jinping Liu et al.."Co3O4 NanowireMnO2 Ultrathin Nanosheet Core/Shell Arrays: A New Class of High-Performance Pseudocapacitive Materials".《Advanced Materials》.2011,第23卷(第18期),第2076-2081页. *
Xihong Lu et al.."WO3-xAuMnO2 Core-Shell Nanowires on Carbon Fabric for High-Performance Flexible Supercapacitors".《Advanced Materials》.2012,第24卷(第7期),第938-944页. *

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