CN102903425B - A kind of NFC device thin-film material and preparation method thereof and application - Google Patents
A kind of NFC device thin-film material and preparation method thereof and application Download PDFInfo
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Abstract
The present invention relates to a kind of NFC device thin-film material and preparation method thereof and application, this thin-film material by with poly terephthalic acid class PET film and sheet shape iron silicon-base alloy powder for base material is composited; Described shape iron silicon-base alloy powder is adhered to the surface of PET film, and sheet shape iron silicon-base alloy powder is parallel to PET film.The realization of the embodiment of the present invention avoids induction alternating electromagnetism signal and is subject to the impact of hardware and produces eddy current loss, and then improves accuracy, sensitivity and reading/writing distance that NFC chip reads and writes data.
Description
Technical field
The present invention relates to electromagnetism interference Material Field, particularly relate to a kind of NFC device thin-film material and preparation method thereof and application.
Background technology
In recent years, along with the development of REID, near-field communication (the English full name of near-field communication is Near FieldCommunication, is usually abbreviated as NFC) technology becomes the emerging hot technology of sudden emergence.Near-field communication technology (i.e. NFC technique) is also called the short distance wireless communication technology, a kind of short-range non contact angle measurement and interconnection technique, allow to carry out contactless Point-to-Point Data Transmission between electronic equipment, its service range is less than or equal to 0.1 meter, is mainly used on the electronic equipments such as digital camera, computer, mobile phone, PDA.Because NFC technique adds data double-way transmitting function than traditional REID, the mutual certification that can realize, dynamic encryption and disposable key, therefore NFC technique has natural high security.Exactly because NFC technique has the guarantee of high security, so the electronic equipment (usually referred to as NFC device) applying NFC technique is widely used in the field such as mobile payment, electronic bill, smart media and exchange and transmission data.
At present, NFC device the most common surely belongs to NFC mobile phone, is therefore described for NFC mobile phone in present specification, but this does not form the restriction to the application.NFC mobile phone realizes NFC function by built-in NFC chip (NFC chip is a kind of electronic component that have employed NFC technique); NFC chip by the antenna transmission induction alternating electromagnetism signal of NFC mobile phone, and then realizes data read-write operation.In the prior art, the inner space of NFC mobile phone is very limited, is inevitably provided with the various metals structural members such as battery case, wiring board, metal backing around the antenna of therefore NFC mobile phone; Because these hardwares do not have the ability of electromagnetism interference, therefore in the process transmitted by antenna at induction alternating electromagnetism signal, the hardware be positioned at around antenna can make induction alternating electromagnetism signal produce eddy current loss, and then can cause NFC chip generation reading and writing data failure fault; Such as: as shown in Figure 1, the Principle of Signal Transmission schematic diagram of certain existing NFC mobile phone, in the process that induction alternating electromagnetism signal alpha is transmitted by antenna 1, the induction alternating electromagnetism signal alpha that antenna 1 two ends send can be delivered to metal backing 2, because metal backing 2 does not have the ability of electromagnetism interference, therefore respond to alternating electromagnetism signal alpha and can enter metal backing 2 inside, and cause eddy current loss.
Summary of the invention
Embodiments provide a kind of N FC equipment thin-film material and preparation method thereof and application, so that avoid induction alternating electromagnetism signal be subject to the impact of hardware and produce eddy current loss, and then improve accuracy, sensitivity and the reading/writing distance that NFC chip reads and writes data.
The embodiment of the present invention is realized by following technical scheme:
A kind of NFC device thin-film material, with poly terephthalic acid class PET film and sheet shape iron silicon-base alloy powder for base material is composited;
Described shape iron silicon-base alloy powder is coated on the surface of PET film, and sheet shape iron silicon-base alloy powder is parallel to the surface of PET film.
Preferably, corresponding sheet shape iron silicon-base alloy powder is at least one in iron sial sheet shape powder, iron silicochromium sheet shape powder or iron sial chromium sheet shape powder;
Described iron sial sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 200 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤8Oe;
Described iron silicochromium sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 150 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤7.5Oe;
Described iron sial chromium sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 200 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤7.8Oe.
Preferably, corresponding iron sial sheet shape powder is made up of the impurity of the iron of 75 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions and 0 ~ 1 weight portion;
Corresponding iron silicochromium sheet shape powder is made up of the impurity of the iron of 80 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Corresponding iron sial chromium sheet shape powder is made up of the impurity of the silicon of the iron of 60 ~ 85 weight portions, 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Wherein, described impurity is at least one in magnesium, nickel, cobalt, calcium halophosphate activated by antimony andmanganese.
Preferably, the thickness of this thin-film material is 0.05 ~ 1.0mm; Wherein, the thickness of PET film is 0.005 ~ 0.1mm, and the hot strength of PET film is greater than 5MPa.
A preparation method for NFC device thin-film material, comprises the steps:
Steps A: prepare sheet shape iron silicon-base alloy powder; Described sheet shape iron silicon-base alloy powder is at least one in iron sial sheet shape powder, iron silicochromium sheet shape powder or iron sial chromium sheet shape powder;
Described iron sial sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 200 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤8Oe;
Described iron silicochromium sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 150 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤7.5Oe;
Described iron sial chromium sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 200 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤7.8Oe;
Step B: sheet shape iron silicon-base alloy powder steps A obtained mixes with coupling agent, and fully stirs post-drying, thus the sheet shape iron silicon-base alloy powder obtaining Surface coating coupling agent; Described coupling agent is silane coupler or metatitanic acid coupling agent; The weight ratio of coupling agent and sheet shape iron silicon-base alloy powder is 0.1 ~ 3:100;
Step C: the sheet shape iron silicon-base alloy powder obtained by step B fully mixes with adhesive, and be coated on thickness is 0.005 ~ 0.1mm, hot strength is greater than 5MPa poly terephthalic acid class PET film, take obtained thickness as the ferrous alloy fexible film of 0.05 ~ 1.0mm; Described adhesive is at least one in polyurethane adhesive, epoxyn or acrylic acid adhesive; The weight ratio of adhesive and sheet shape iron silicon-base alloy powder is 5 ~ 20:100;
Step D: the ferrous alloy fexible film obtained to step C applies an one direction uniform magnetic field immediately; The direction in this magnetic field is parallel with ferrous alloy fexible film, and the intensity in this magnetic field is 100 ~ 1000Gs;
Step e: densification process is carried out to the ferrous alloy fexible film after step D process, thus obtain NFC device thin-film material.
Preferably, described iron sial sheet shape powder is made up of the impurity of the iron of 75 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions and 0 ~ 1 weight portion;
Described iron silicochromium sheet shape powder is made up of the impurity of the iron of 80 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Described iron sial chromium sheet shape powder is made up of the impurity of the silicon of the iron of 60 ~ 85 weight portions, 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Wherein, described impurity is at least one in magnesium, nickel, cobalt, calcium halophosphate activated by antimony andmanganese.
Preferably, the described ferrous alloy fexible film obtained to step C applies an one direction uniform magnetic field immediately and comprises:
After step C obtains ferrous alloy fexible film, before the adhesive on ferrous alloy fexible film is uncured, an one direction uniform magnetic field is applied to ferrous alloy fexible film.
Preferably, carry out densification process to the ferrous alloy fexible film after step D process to comprise:
Be 100 ~ 200 DEG C in temperature, under pressure is the condition of 100 ~ 1000KPa, flat board compacting 5 ~ 10 minutes carried out, to complete densification process to the ferrous alloy fexible film after step D process;
Or,
Be 100 ~ 200 DEG C in temperature, under pressure is the condition of 100 ~ 1000KPa, multi-roller rolling carried out 5 ~ 10 minutes to the ferrous alloy fexible film after step D process, to complete densification process.
A kind of NFC device metal backing, described metal backing is provided with the NFC device thin-film material described in technique scheme.
A kind of NFC device, comprises metal backing, described metal backing is provided with the NFC device thin-film material described in technique scheme.
As seen from the above technical solution provided by the invention, the thin-film material that the embodiment of the present invention provides is owing to have employed iron sial, the iron-based powders such as iron silicochromium are raw material, and in its preparation process with the direction of film parallel on be applied with an one direction uniform magnetic field, therefore this thin-film material is made to have good electromagnetic performance, and the electromagnetic signal produced for induction coil provides an effective electromagnetic circuit, thus avoid induction alternating electromagnetism signal and be subject to the impact of hardware and produce eddy current loss, and then improve the accuracy that NFC chip reads and writes data, sensitivity and reading/writing distance.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the Principle of Signal Transmission schematic diagram of the NFC mobile phone of NFC mobile phone in prior art;
The cross-sectional structure schematic diagram of the NFC device thin-film material that Fig. 2 provides for the embodiment of the present invention;
The Principle of Signal Transmission schematic diagram of the NFC device of the present invention that Fig. 3 provides for the embodiment of the present invention;
The schematic flow sheet one of the preparation method of the NFC device thin-film material that Fig. 4 provides for the embodiment of the present invention;
The schematic flow sheet two of the preparation method of the NFC device thin-film material that Fig. 5 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
First it should be noted that, NFC device thin-film material provided by the present invention and preparation method thereof is applicable to the various electronic equipment such as digital camera, computer, mobile phone, PDA with NFC function, only be described for NFC mobile phone in present specification, but this does not form the restriction to the application.Embodiments provide a kind of NFC device thin-film material, and the product of this thin-film material of preparation method and application of this thin-film material; Respectively three will be described in detail below.
(1) a kind of NFC device thin-film material
As shown in Figure 2, a kind of NFC device thin-film material is the abbreviation of Polyethylene Terephthalate with PET(PET, is translated into poly terephthalic acid class plastics) plastic film and sheet shape iron silicon-base alloy powder be that base material is composited; Described shape iron silicon-base alloy powder is coated on the surface of PET film, and sheet shape iron silicon-base alloy powder is parallel to the surface of PET film.
Wherein, the thickness of this PET film is preferably 0.005 ~ 0.1mm, and its hot strength is more preferably greater than 5MPa, thus final obtained thin-film material can be made both to have kept less thickness, can possess higher intensity again.Corresponding sheet shape iron silicon-base alloy powder can be at least one in iron sial sheet shape powder, iron silicochromium sheet shape powder or iron sial chromium sheet shape powder, and these sheet shape iron silicon-base alloy powder preferably meet following condition respectively:
(1) iron sial sheet shape powder: described iron sial sheet shape powder can adopt the unit as constituent content each in following table 1(table 1 to be: weight portion) in component proportion be prepared from, and this iron sial sheet shape powder preferably meets as the performance parameter in following table 2;
Table 1:
| Most wide region | Preferable range | Optimum value | |
| Iron | 75～90 | 81～88 | 86 |
| Silicon | 5～15 | 6～10 | 8 |
| Aluminium | 5～10 | 6～8 | 5.9 |
| Impurity | 0～1 | 0～0.5 | 0.1 |
Table 2:
| Most wide region | Preferable range | Optimum value | |
| Powder long axis direction size | 20～200μm | 50～150μm | 60～90μm |
| Powder thickness | ≤2μm | ≤1.2μm | 0.05～0.1μm |
| Powder radius-thickness ratio | ≥150 | ≥450 | 600～1000 |
| Powder coercivity H | ≤8Oe | ≤6.6Oe | ≤3.6Oe |
Need to be illustrated, the impurity described in present specification is at least one in magnesium (Mg), nickel (Ni), cobalt (Co), antimony (Sb) or manganese (Mn); Radius-thickness ratio described in present specification refers to the ratio of powder long axis direction size and powder thickness; Following therefore repeat no more.
(2) iron silicochromium sheet shape powder: described iron silicochromium sheet shape powder can adopt the unit as constituent content each in following table 3(table 3 to be: weight portion) in component proportion be prepared from, and this iron silicochromium sheet shape powder preferably meets as the performance parameter in following table 4;
Table 3:
| Most wide region | Preferable range | Optimum value | |
| Iron | 80～90 | 81～88 | 88 |
| Silicon | 5～15 | 10～15 | 10 |
| Chromium | 1～5 | 1～3 | 1.9 |
| Impurity | 0～1 | 0～0.5 | 0.1 |
Table 4:
| Most wide region | Preferable range | Optimum value | |
| Powder long axis direction size | 20～150μm | 50～120μm | 60～90μm |
| Powder thickness | ≤2μm | ≤1.2μm | 0.05～0.1μm |
| Powder radius-thickness ratio | ≥150 | ≥450 | 600～1000 |
| Powder coercivity H | ≤7.5Oe | ≤6.3Oe | ≤3.6Oe |
(3) iron sial chromium sheet shape powder: described iron sial chromium sheet shape powder can adopt the unit as constituent content each in following table 5(table 5 to be: weight portion) in component proportion be prepared from, and this iron sial chromium sheet shape powder preferably meets as the performance parameter in following table 6;
Table 5:
| Most wide region | Preferable range | Optimum value | |
| Iron | 60～85 | 81～88 | 84 |
| Silicon | 5～15 | 6～10 | 8 |
| Aluminium | 5～10 | 6～8 | 6 |
| Chromium | 1～15 | 2～10 | 1.9 |
| Impurity | 0～1 | 0～0.5 | 0.1 |
Table 6:
| Most wide region | Preferable range | Optimum value | |
| Powder long axis direction size | 20～200μm | 50～150μm | 60～90μm |
| Powder thickness | ≤2μm | ≤1.2μm | 0.05～0.1μm |
| Powder radius-thickness ratio | ≥150 | ≥450 | 600～1000 |
| Powder coercivity H | ≤7.8Oe | ≤6.5Oe | ≤3.6Oe |
Particularly, the integral thickness of this thin-film material can be 0.05 ~ 1.Omm, but is preferably 0.1 ~ 0.3mm, thus can provide enough effective magnetic circuits, ensures the transmission of signal.As shown in Figure 2, sheet shape iron silicon-base alloy powder can be coated on the surface of PET film by modes such as bonding, sprayings, and several sheet shape iron silicon-base alloy powders can stacked, the surface that is arranged in PET film spaced reciprocally mutually, but each shape iron silicon-base alloy powder is preferably parallel to the surface of PET film as much as possible; Because sheet shape iron silicon-base alloy powder entirety is in sheet shape, therefore sheet shape iron silicon-base alloy powder can all or this major part be parallel to the surface of PET film.
Further, as shown in Figure 3, the NFC device thin-film material that one deck embodiment of the present invention provides is set on the surface of metal backing 2; In the process that induction alternating electromagnetism signal alpha is transmitted by antenna 1, the induction alternating electromagnetism signal alpha that antenna 1 two ends send can be delivered to this thin-film material 3; Due to stacked, the surface that is arranged in PET film spaced reciprocally mutually of the sheet shape iron silicon-base alloy powder in this thin-film material 3, and each shape iron silicon-base alloy powder is parallel to the surface of PET film as much as possible, therefore these sheet shape iron silicon-base alloy powders form and can form an effective electromagnetic path, and make this thin-film material 3 have electromagnetic property well; When the induction alternating electromagnetism signal alpha that antenna sends is delivered to this thin-film material 3 surface, induction alternating electromagnetism signal alpha can be transmitted along this electromagnetic path, thus reduce Signal transmissions to the eddy current loss produced during metal backing 2, guarantee the normal communication of aerial signal.As can be seen here, the NFC device thin-film material that the embodiment of the present invention provides can make hardware avoid induction alternating electromagnetism signal to produce eddy current loss, and then improves accuracy, sensitivity and reading/writing distance that NFC chip reads and writes data.
(2) a kind of preparation method of NFC device thin-film material
As shown in Figure 4, a kind of preparation method of NFC device thin-film material, it specifically can comprise the following steps:
Steps A: prepare sheet shape iron silicon-base alloy powder.
Wherein, corresponding sheet shape iron silicon-base alloy powder can be at least one in iron sial sheet shape powder, iron silicochromium sheet shape powder or iron sial chromium sheet shape powder, and these sheet shape iron silicon-base alloy powder preferably meet respectively as the technical parameter condition in above-mentioned table 1 to table 6.
Particularly, corresponding sheet shape iron silicon-base alloy powder can adopt following preparation technology to be prepared from:
Step a1, Metal Melting: prepare burden according to the constituent content of above-mentioned table 1, table 3 or table 5, and insert in vacuum smelting equipment and be smelted into alloy cast ingot.
Step a2, prepare alloy powder: alloy cast ingot melted for step a1 is prepared into by the mode of powder by atomization or Mechanical Crushing powder process the alloy powder that granularity is 10 ~ 150 μm; But in actual applications, be preferably prepared into the alloy powder that granularity is 20 ~ 50 μm.
Step a3, flap-type process: the sheet shape alloy powder being processed into radius-thickness ratio >=150 in flaky process machine inserted by the alloy powder obtained by step a2.
Step a4, selection by winnowing: the sheet shape alloy powder that step a3 is obtained is inserted in centrifugal winnowing machine and carries out selection by winnowing process, thus remove the bad sheet shape alloy powder of flap-typeization, obtain the preferred sheet shape alloy powder of radius-thickness ratio >=450.
Step a5, heat treatment: preferred sheet shape alloy powder good for step a3 selection by winnowing is inserted in heat-treatment furnace and carries out temper, temperature is 300 ~ 800 DEG C, thus can obtain the sheet shape iron silicon-base alloy powder meeting performance requirement in above-mentioned table 2, table 4 or table 6.
It should be noted that, the process equipments such as the vacuum smelting equipment used in step a1 ~ a5, flaky process machine, centrifugal winnowing machine, heat-treatment furnace are all metal-working plants common in prior art, therefore repeat no more in present specification herein; And the melting adopted in step a1 ~ a5, powder by atomization, Mechanical Crushing powder process, flap-type process, selection by winnowing, temper are also metal working process well known in the art in prior art, therefore also repeat no more in present specification.
Step B: sheet shape iron silicon-base alloy powder steps A obtained mixes with coupling agent, and fully stirs post-drying, thus the sheet shape iron silicon-base alloy powder obtaining Surface coating coupling agent.
Wherein, corresponding coupling agent can be silane coupler or metatitanic acid coupling agent, and the weight ratio of coupling agent and sheet shape iron silicon-base alloy powder can be 0.1 ~ 3:100, but be preferably 0.5 ~ 1.5:100 in actual applications, thus effectively can improve the surface insulation performance of powder, and strengthen the adhesion of powder and adhesive.
Particularly, in order to dilute coupling agent and enable to be coated on powder surface fully, when therefore sheet shape iron silicon-base alloy powder mixes with coupling agent, the organic solvents such as some alcohol are preferably added; 100 times of the use amount of this organic solvent preferably coupling agent total weight.
Step C: the sheet shape iron silicon-base alloy powder obtained by step B fully mixes with adhesive, and be coated on that thickness is 0.005 ~ 0.1mm, hot strength is greater than on the PET film of 5MPa, take obtained thickness as the ferrous alloy fexible film of 0.05 ~ 1.0mm.
Wherein, corresponding adhesive can be at least one in polyurethane adhesive, epoxyn or acrylic acid adhesive, and the weight ratio of this adhesive and sheet shape iron silicon-base alloy powder can be 5 ~ 20:100, but is preferably 12 ~ 16:100 in actual applications; This can either ensure the adhesive strength of sheet shape iron silicon-base alloy powder, can save again use amount and the cost of material of adhesive;
Particularly, sheet shape iron silicon-base alloy powder preferably adopts extrusion coated technique of the prior art to be coated on PET film, thus sheet shape iron silicon-base alloy powder can be made to be coated on PET film more equably.
Step D: the ferrous alloy fexible film obtained to step C applies an one direction uniform magnetic field immediately.
Wherein, the direction in this magnetic field is preferably parallel with ferrous alloy fexible film, and the intensity in this magnetic field is 100 ~ 1000Gs, but is preferably 200 ~ 600Gs in actual applications, thus can fitly be parallel to the arrangement of PET film surface by supplementary plate shape iron silicon-base alloy powder.
Particularly, applying an one direction uniform magnetic field immediately to ferrous alloy fexible film accordingly can be: after step C obtains ferrous alloy fexible film, before adhesive on ferrous alloy fexible film is uncured, an one direction uniform magnetic field is applied to ferrous alloy fexible film; But in actual applications, step C carries out usually in apparatus for coating, therefore this one direction uniform magnetic field is preferably arranged at the exit of apparatus for coating, thus can provide convenience for the batch production of thin-film material.
Step e: densification process is carried out to the ferrous alloy fexible film after step D process, thus obtain NFC device thin-film material.
Wherein, the density of the final NFC device thin-film material obtained preferably is greater than 2600kg/m
3, but preferably density is greater than 2800kg/m
3;
Particularly, this densification process can adopt the techniques such as press of the prior art compacting, pressurized heat process, dull and stereotyped temperature-pressure, multi-roller rolling to process, but preferably adopts the following two kinds technique to process:
(1) be 100 ~ 200 DEG C in temperature, under pressure is the condition of 100 ~ 1000KPa, flat board compacting 5 ~ 10 minutes carried out, to complete densification process to the ferrous alloy fexible film after step D process;
(2) be 100 ~ 200 DEG C in temperature, under pressure is the condition of 100 ~ 1000KPa, multi-roller rolling carried out 5 ~ 10 minutes to the ferrous alloy fexible film after step D process, to complete densification process.
(3) product of this NFC device thin-film material is applied
A kind of NFC device hardware, described hardware is provided with the NFC device thin-film material described in technique scheme; Such as: this hardware can be the metal backing being provided with NFC device thin-film material, battery case, wiring board or metal backing etc.As fully visible, this NFC device hardware can avoid induction alternating electromagnetism signal to produce eddy current loss, and then improves accuracy, sensitivity and reading/writing distance that NFC chip reads and writes data.
A kind of NFC device, comprise metal backing, the various metals structural members such as battery case, wiring board or metal backing, these hardwares are provided with the NFC device thin-film material described in technique scheme; Such as: this NFC device can be mobile phone, notebook computer, NFC card reader etc.As fully visible, this NFC device can avoid induction alternating electromagnetism signal to produce eddy current loss, and then improves accuracy, sensitivity and reading/writing distance that NFC chip reads and writes data.
In order to more clearly show NFC device thin-film material that the embodiment of the present invention provides and preparation method thereof and application, will be described in detail technical scheme of the present invention and technique effect by several instantiation below.
Embodiment one
Iron, Silicified breccias are prepared burden according to the ratio of Fe: Si: Al=85: 10: 5, after vacuum melting ingot, powder by atomization, obtained granularity is the alloy powder of 50 ~ 150 μm; By obtained alloy powder through sheet shape processor process 4 ~ 10 hours, then after selection by winnowing and temper, obtain that particle diameter is 50 ~ 150 μm, powder thickness≤1.2 μm, powder radius-thickness ratio >=450 iron sial sheet shape powder.
By above-mentioned iron sial sheet shape powder and silane coupler and alcohol, according to iron sial sheet shape powder: silane coupler: alcohol=100: the ratio mixing of 1: 100, abundant stirring and drying, obtains coated good iron sial sheet shape powder;
By above-mentioned coated good iron sial sheet shape powder and polyurethane adhesive, according to coated good iron sial sheet shape powder: polyurethane adhesive=85: the ratio mixing of 15, and carry out extrusion coated on PET film; The exit of apparatus for coating applies the one direction magnetic field of 400 ~ 500Gs, and magnetic direction is parallel with PET film; Then, temperature be 145 ~ 155 DEG C, pressure carry out under being the condition of 100 ~ 1000KPa flat board compacting 8 ~ 10 minutes, NFC device thin-film material can be obtained.
The initial permeability of this thin-film material is 100 ~ 130, coercive force is 1 ~ 3Oe, density of film is 2800 ~ 3000kg/m
3.Carry out Card Reader test by NFC mobile phone: when not adding this thin-film material, 0mm also cannot normal Card Reader, and when after this this thin-film material of interpolation, effective Card Reader distance is 20 ~ 25mm.Carry out Card Reader test by NFC card reader: when not adding this thin-film material, 0mm also cannot normal Card Reader; When after this this thin-film material of interpolation, effective Card Reader distance is 30 ~ 40mm.
Embodiment two
By iron, silicon and chromium according to Fe: Si: Cr=88: 10: 2 ratio prepare burden, after vacuum melting ingot, powder by atomization, obtained granularity is the alloy powder of 50 ~ 100 μm; By obtained alloy powder through sheet shape processor process 4 ~ 10 hours, then after selection by winnowing and temper, obtain that particle diameter is 50 ~ 150 μm, powder thickness≤1.2 μm, powder radius-thickness ratio >=450 iron silicochromium sheet shape powder.
By above-mentioned iron silicochromium sheet shape powder and silane coupler and alcohol, according to iron silicochromium sheet shape powder: silane coupler: alcohol=100: the ratio mixing of 1: 100, abundant stirring and drying, obtains coated good iron silicochromium sheet shape powder;
By above-mentioned coated good iron silicochromium sheet shape powder and polyurethane adhesive and epoxyn, according to coated good iron silicochromium sheet shape powder: polyurethane adhesive: epoxyn=85: the ratio mixing of 12: 3, and carry out extrusion coated on PET film; The exit of apparatus for coating applies the one direction magnetic field of 300Gs, and magnetic direction is parallel with PET film; Then, temperature be 180 DEG C, pressure carry out under being the condition of 100 ~ 1000KPa flat board compacting 10 minutes, NFC device thin-film material can be obtained.
The initial permeability of this thin-film material is 70 ~ 90, coercive force is 4 ~ 6Oe, density of film is 3000 ~ 3200kg/m
3.Carry out Card Reader test by NFC mobile phone: when not adding this thin-film material, 0mm also cannot normal Card Reader, and when after this this thin-film material of interpolation, effective Card Reader distance is 20 ~ 30mm.Carry out Card Reader test by NFC card reader: when not adding this thin-film material, 0mm also cannot normal Card Reader; When after this this thin-film material of interpolation, effective Card Reader distance is 20 ~ 40mm.
Embodiment three
By good iron silicochromium sheet shape powder coated in good iron sial sheet shape powder coated in embodiment one and embodiment two, according to iron sial sheet shape powder: iron silicochromium sheet shape powder=7: the ratio of 3 mixes, abundant stirring and drying, obtain coated good mixed powder;
By above-mentioned coated good mixed powder and polyurethane adhesive and epoxyn, according to coated good mixed powder: polyurethane adhesive: epoxyn=85: the ratio mixing of 12: 3, and carry out extrusion coated on PET film; The exit of apparatus for coating applies the one direction magnetic field of 300Gs, and magnetic direction is parallel with PET film; Then, temperature be 180 DEG C, pressure carry out under being the condition of 100 ~ 1000KPa flat board compacting 10 minutes, NFC device thin-film material can be obtained.
The initial permeability of this thin-film material is 90 ~ 110, coercive force is 2 ~ 4Oe, density of film is 2800 ~ 3200kg/m
3.Carry out Card Reader test by NFC mobile phone: when not adding this thin-film material, 0mm also cannot normal Card Reader, and when after this this thin-film material of interpolation, effective Card Reader distance is 10 ~ 30mm.Carry out Card Reader test by NFC card reader: when not adding this thin-film material, 0mm also cannot normal Card Reader; When after this this thin-film material of interpolation, effective Card Reader distance is 20 ~ 50mm.
As fully visible, the realization of the embodiment of the present invention can avoid induction alternating electromagnetism signal be subject to the impact of hardware and produce eddy current loss, and then improves accuracy, sensitivity and reading/writing distance that NFC chip reads and writes data.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (10)
1. a NFC device thin-film material, is characterized in that, with poly terephthalic acid class PET film and sheet shape iron silicon-base alloy powder for base material is composited;
Described shape iron silicon-base alloy powder is coated on the surface of PET film, and sheet shape iron silicon-base alloy powder is parallel to the surface of PET film;
Wherein, described sheet shape iron silicon-base alloy powder is at least one in iron sial sheet shape powder, iron silicochromium sheet shape powder or iron sial chromium sheet shape powder;
Described iron sial sheet shape powder meets: powder long axis direction is of a size of 20 ~ 200 μm, powder radius-thickness ratio >=150;
Described iron silicochromium sheet shape powder meets: powder long axis direction is of a size of 20 ~ 150 μm, powder radius-thickness ratio >=150;
Described iron sial chromium sheet shape powder meets: powder long axis direction is of a size of 20 ~ 200 μm, powder radius-thickness ratio >=150.
2. NFC device thin-film material according to claim 1, is characterized in that,
Described iron sial sheet shape powder meets the following conditions: powder thickness≤2 μm, powder coercivity H≤8Oe;
Described iron silicochromium sheet shape powder meets the following conditions: powder thickness≤2 μm, powder coercivity H≤7.5Oe;
Described iron sial chromium sheet shape powder meets the following conditions: powder thickness≤2 μm, powder coercivity H≤7.8Oe.
3. NFC device thin-film material according to claim 2, is characterized in that,
Described iron sial sheet shape powder is made up of the impurity of the iron of 75 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions and 0 ~ 1 weight portion;
Described iron silicochromium sheet shape powder is made up of the impurity of the iron of 80 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Described iron sial chromium sheet shape powder is made up of the impurity of the silicon of the iron of 60 ~ 85 weight portions, 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Wherein, described impurity is at least one in magnesium, nickel, cobalt, calcium halophosphate activated by antimony andmanganese.
4. NFC device thin-film material according to any one of claim 1 to 3, is characterized in that, the thickness of this thin-film material is 0.05 ~ 1.0mm; Wherein, the thickness of PET film is 0.005 ~ 0.1mm, and the hot strength of PET film is greater than 5MPa.
5. a preparation method for NFC device thin-film material, is characterized in that, comprises the steps:
Steps A: prepare sheet shape iron silicon-base alloy powder; Described sheet shape iron silicon-base alloy powder is at least one in iron sial sheet shape powder, iron silicochromium sheet shape powder or iron sial chromium sheet shape powder;
Described iron sial sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 200 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤8Oe;
Described iron silicochromium sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 150 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤7.5Oe;
Described iron sial chromium sheet shape powder meets the following conditions: powder long axis direction is of a size of 20 ~ 200 μm, powder thickness≤2 μm, powder radius-thickness ratio >=150, powder coercivity H≤7.8Oe;
Step B: sheet shape iron silicon-base alloy powder steps A obtained mixes with coupling agent, and fully stirs post-drying, thus the sheet shape iron silicon-base alloy powder obtaining Surface coating coupling agent; Described coupling agent is silane coupler or metatitanic acid coupling agent; The weight ratio of coupling agent and sheet shape iron silicon-base alloy powder is 0.1 ~ 3:100;
Step C: the sheet shape iron silicon-base alloy powder obtained by step B fully mixes with adhesive, and be coated on thickness is 0.005 ~ 0.1mm, hot strength is greater than 5MPa poly terephthalic acid class PET film, take obtained thickness as the ferrous alloy fexible film of 0.05 ~ 1.0mm; Described adhesive is at least one in polyurethane adhesive, epoxyn or acrylic acid adhesive; The weight ratio of adhesive and sheet shape iron silicon-base alloy powder is 5 ~ 20:100;
Step D: the ferrous alloy fexible film obtained to step C applies an one direction uniform magnetic field immediately; The direction in this magnetic field is parallel with ferrous alloy fexible film, and the intensity in this magnetic field is 100 ~ 1000Gs;
Step e: densification process is carried out to the ferrous alloy fexible film after step D process, thus obtain NFC device thin-film material.
6. the preparation method of NFC device thin-film material according to claim 5, is characterized in that,
Described iron sial sheet shape powder is made up of the impurity of the iron of 75 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions and 0 ~ 1 weight portion;
Described iron silicochromium sheet shape powder is made up of the impurity of the iron of 80 ~ 90 weight portions, the silicon of 5 ~ 15 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Described iron sial chromium sheet shape powder is made up of the impurity of the silicon of the iron of 60 ~ 85 weight portions, 5 ~ 15 weight portions, the aluminium of 5 ~ 10 weight portions, the chromium of 1 ~ 5 weight portion and 0 ~ 1 weight portion;
Wherein, described impurity is at least one in magnesium, nickel, cobalt, calcium halophosphate activated by antimony andmanganese.
7. the preparation method of the NFC device thin-film material according to claim 5 or 6, is characterized in that, the described ferrous alloy fexible film obtained to step C applies an one direction uniform magnetic field immediately and comprise:
After step C obtains ferrous alloy fexible film, before the adhesive on ferrous alloy fexible film is uncured, an one direction uniform magnetic field is applied to ferrous alloy fexible film.
8. the preparation method of the NFC device thin-film material according to claim 5 or 6, is characterized in that, carries out densification process comprise the ferrous alloy fexible film after step D process:
Be 100 ~ 200 DEG C in temperature, under pressure is the condition of 100 ~ 1000KPa, flat board compacting 5 ~ 10 minutes carried out, to complete densification process to the ferrous alloy fexible film after step D process;
Or,
Be 100 ~ 200 DEG C in temperature, under pressure is the condition of 100 ~ 1000KPa, multi-roller rolling carried out 5 ~ 10 minutes to the ferrous alloy fexible film after step D process, to complete densification process.
9. a NFC device metal backing, is characterized in that, described metal backing is provided with the NFC device thin-film material according to any one of Claims 1-4.
10. a NFC device, comprises metal backing, it is characterized in that, described metal backing is provided with the NFC device thin-film material according to any one of Claims 1-4.
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| CN105826069B (en) * | 2016-05-07 | 2019-04-09 | 江苏金羿先磁新材料科技有限公司 | A kind of preparation method of nanoscale primitive assembling compounded magnetic conductive thin-film material |
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| CN86106790A (en) * | 1985-10-07 | 1987-07-15 | 日本矿业株式会社 | Iron silicon alloy magnetic film and manufacture method thereof and laminated film magnetic head |
| US5207841A (en) * | 1990-04-12 | 1993-05-04 | Tdk Corporation | Soft magnetic powder and magnetic shield composition |
| CN101064207A (en) * | 2006-03-27 | 2007-10-31 | Tdk株式会社 | Flaky soft magnetic metal powder and magnetic core member for RFID antenna |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86106790A (en) * | 1985-10-07 | 1987-07-15 | 日本矿业株式会社 | Iron silicon alloy magnetic film and manufacture method thereof and laminated film magnetic head |
| US5207841A (en) * | 1990-04-12 | 1993-05-04 | Tdk Corporation | Soft magnetic powder and magnetic shield composition |
| CN101064207A (en) * | 2006-03-27 | 2007-10-31 | Tdk株式会社 | Flaky soft magnetic metal powder and magnetic core member for RFID antenna |
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