CN102891177A - Semiconductor device and manufacturing method of semiconductor device - Google Patents
Semiconductor device and manufacturing method of semiconductor device Download PDFInfo
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- CN102891177A CN102891177A CN2011102014132A CN201110201413A CN102891177A CN 102891177 A CN102891177 A CN 102891177A CN 2011102014132 A CN2011102014132 A CN 2011102014132A CN 201110201413 A CN201110201413 A CN 201110201413A CN 102891177 A CN102891177 A CN 102891177A
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Abstract
The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. The semiconductor device comprises a patterned laminated structure and epitaxy semiconductor layers, wherein the laminated structure is formed on a semiconductor substrate and sequentially comprises a germanium semiconductor layer, a grid dielectric layer and a grid layer from bottom to top; the epitaxy semiconductor layers are selectively grown at the two sides of the germanium semiconductor layer and are doped; the epitaxy semiconductor layers form into a risen source/drain extension region; and the germanium semiconductor layer is used as a trench region. According to the semiconductor device, the junctions at the source/drain extension region are different in depth (or small in thickness) and are high in doping concentration beneficially, and with the adoption of the semiconductor device, the carrier mobility can be increased beneficially.
Description
Technical field
The present invention relates to semiconductor device and manufacture method thereof.The invention particularly relates to semiconductor device and the manufacture method thereof of the source drain extension region with extension.
Background technology
Current, millions of semiconductor device is integrated in together to form very lagre scale integrated circuit (VLSIC).
Fig. 1 illustrates the sectional view of conventional semiconductor device (transistor).Transistor generally comprises gate dielectric layer 140 on the Semiconductor substrate (for the sake of clarity, not shown) and the grid layer 150 on the gate dielectric layer 140 herein.Sidewall at gate dielectric layer 140 and grid layer 150 is formed with sidewall spacer 160 and 165.Transistor generally also comprises the pair of source drain region 110 of grid layer both sides 150.In addition, pair of source drain extension region 120 is formed in the surf zone of Semiconductor substrate, and extends under gate dielectric layer 140 and the grid layer 150.Channel region 130 is formed between the pair of source drain extension region 120, in the Semiconductor substrate under the gate dielectric layer 140.
Along with transistorized characteristic size is constantly dwindled, wish that the junction depth of source drain extension region 120 is shallow (or thickness is little) to reduce junction capacitance (C
Junc), and wish that the activation concentration of dopant of source drain extension region 120 is high to reduce to accumulate resistance (R
Acc), thereby increase transistorized drive current.
For above-mentioned purpose, usually for annealing by the formed source of Implantation drain extension region, the especially molten annealing in laser fusion/Asia.
But the present inventor conducts in-depth research this, finds to remain further to be improved by junction depth and the activation concentration of dopant of the formed source of the molten annealing of Implantation and laser fusion/Asia drain extension region.Incidentally, although usually use SIMS (secondary ion mass spectrometry) to measure the molten annealing in laser fusion/Asia dopant distribution afterwards, SIMS can not distinguish whether dopant is activated.
Therefore, the present inventor recognizes, needs the junction depth shallow (or thickness is little) of a provenance drain extension region and activates high semiconductor device and the manufacture method thereof of concentration of dopant.
Summary of the invention
In view of above problem proposes the present invention.
The junction depth that an object of the present invention is to provide a provenance drain extension region shallow (or thickness is little) and high semiconductor device and the manufacture method thereof of activation concentration of dopant.
According to a first aspect of the invention, a kind of semiconductor device is provided, it is characterized in that, described semiconductor device comprises: at the laminated construction that is patterned that Semiconductor substrate forms, described laminated construction comprises Ge semiconductor layer, gate dielectric layer and grid layer from bottom to up successively; In the epitaxial semiconductor layer that is doped of the both sides of described Ge semiconductor layer selective epitaxial growth, wherein, described epitaxial semiconductor layer forms the source drain extension region of raising, and described Ge semiconductor layer is as channel region.
Preferably, the doping content of described epitaxial semiconductor layer is 5.0 * 10
19～5.0 * 10
21Cm
-3
Preferably, the thickness of described epitaxial semiconductor layer is 5～50nm.
Preferably, described semiconductor device is the PMOS transistor.
Preferably, described epitaxial semiconductor layer is the Ge layer.
Preferably, by undercutting, and the length that described Ge semiconductor layer is fallen by undercutting is 10～20% of grid length to described Ge semiconductor layer with respect to described gate dielectric layer.
Preferably, described gate dielectric layer and described grid layer are replaced by high-K gate dielectric layer and metal gate layers.
Preferably, described high-K gate dielectric layer is U-shaped, and described metal gate layers is surrounded by described high-K gate dielectric layer.
According to a second aspect of the invention, a kind of manufacture method of semiconductor device is provided, it is characterized in that, described manufacture method comprises the steps: to form the laminated construction that is patterned in Semiconductor substrate, and described laminated construction comprises Ge semiconductor layer, gate dielectric layer and grid layer from bottom to up successively; The epitaxial semiconductor layer that is doped at the both sides of described Ge semiconductor layer selective epitaxial growth, the source drain extension region of raising with formation; And described gate dielectric layer and described grid layer replaced with high-K gate dielectric layer and metal gate layers, and stay described Ge semiconductor layer as channel region.
Preferably, the doping content of described epitaxial semiconductor layer is 5.0 * 10
19～5.0 * 10
21Cm
-3
Preferably, the thickness of described epitaxial semiconductor layer is 5～50nm.
Preferably, described Ge semiconductor layer is the SiGe layer, and the concentration of Ge is 30～40 atom %.
Preferably, described semiconductor device is the PMOS transistor.
Preferably, described epitaxial semiconductor layer is the Si layer.
Preferably, the condition of described selective epitaxial growth is as follows: H
2Flow be 10～50slm, the flow in Si source is 100～300sccm, the flow of HCl is 50～300sccm, AsH
31%/H
2, B
2H
61%/H
2Or PH
31%/H
2Flow be 100～500sccm, temperature is 620～800 ℃, and pressure be 0.1～1.0 the holder.
Preferably, described manufacture method further comprises the steps: after the described laminated construction of formation and is forming before the described source drain extension region of raising, described Ge semiconductor layer is carried out etching, with with respect to the described Ge semiconductor layer of described gate dielectric layer undercutting, wherein, the length fallen by undercutting of described Ge semiconductor layer is 10～20% of grid length.
Preferably, described Ge semiconductor layer is the SiGe layer, and the concentration of Ge is 30～40 atom %; And carry out described etching by the HCl vapor phase etchant, wherein, use HCl and H
2Mist, the dividing potential drop of HCl is 0.1～0.9 holder, stagnation pressure is less than 80 holders, and temperature is 500～700 ℃.
Preferably, described high-K gate dielectric layer is U-shaped, and described metal gate layers is surrounded by described high-K gate dielectric layer.
Preferably, described manufacture method further comprises the steps: after forming the described source drain extension region of raising and before described gate dielectric layer and described grid layer are replaced with high-K gate dielectric layer and metal gate layers, the formation source-drain area.
According to the present invention, can provide the junction depth of a provenance drain extension region shallow (or thickness is little) and activate high semiconductor device and the manufacture method thereof of concentration of dopant.
Description of drawings
Be contained in the specification and consist of its a part of accompanying drawing embodiments of the invention are shown, and be used for explaining principle of the present invention together with the description.
Be noted that in the accompanying drawings, for convenience of description, the size of various piece may not be to draw according to the proportionate relationship of reality.
The sectional view of the semiconductor device of the schematically illustrated routine of Fig. 1.
The flow chart of an embodiment of the manufacture method of the schematically illustrated semiconductor device according to the invention of Fig. 2.
The sectional view of each step among the described embodiment of the manufacture method of the schematically illustrated semiconductor device according to the invention of Fig. 3 A～3F.
From the following detailed description of reference accompanying drawing to exemplary embodiment, purpose of the present invention, feature and advantage will become obvious.
Embodiment
Describe with reference to the accompanying drawings exemplary embodiment of the present invention in detail.It should be noted that following being described in only is exemplary in essence.Unless specify in addition, otherwise the parts of setting forth in an embodiment, step, numerical value etc. do not limit the scope of the invention.In addition, technology well known by persons skilled in the art, method and apparatus may not be discussed in detail, but are intended in appropriate circumstances become the part of specification.
The below will present invention is described as an example of transistor example.After having read the present invention, those skilled in the art can be in the occasion of the spirit that applies the present invention to any technical scheme that can use the instruction of this place and essence.
The below describes an embodiment of the manufacture method of semiconductor device of the present invention in detail with reference to Fig. 2 and Fig. 3 A～3F.Wherein, the flow chart of the schematically illustrated described embodiment of Fig. 2.The sectional view of each step among the schematically illustrated described embodiment of Fig. 3 A～3F.Be noted that each step among Fig. 2 might not all be essential, but can according to circumstances omit some step wherein.
At first, in the step 210 of Fig. 2, form the laminated construction that is patterned in Semiconductor substrate 300, described laminated construction comprises Ge semiconductor layer 305, gate dielectric layer 340 and grid layer 350 (referring to Fig. 3 A) from bottom to up successively.
The thickness of Ge semiconductor layer 305 for example can be 5～50nm.In some embodiments of the invention, the thickness of Ge semiconductor layer 305 is less than 20nm, even less than 10nm.
The material of gate dielectric layer 340 is not particularly limited, and it is such as thinking Si oxide or silicon nitride etc.
The material of grid layer 350 is not particularly limited, and it is such as thinking polysilicon etc.
Can utilize methods known in the art to form described laminated construction by deposition, patterning and etching etc.
Next, in the step 220 of Fig. 2, Ge semiconductor layer 305 is carried out etching, with the two ends (referring to Fig. 3 B) with respect to gate dielectric layer 340 undercutting Ge semiconductor layers 305.
The purpose at the two ends of undercutting Ge semiconductor layer 305 is so that following epitaxial semiconductor layer and the grid structure that forms overlapped mutually.For example, Ge semiconductor layer 305 can be identical by the length at the two ends that undercutting is fallen, and for example is 5～10% of grid length.In other words, the total length at the two ends fallen by undercutting of Ge semiconductor layer 305 can be 10～20% of grid length.
Etching Ge semiconductor layer 305 can carry out under following process conditions: wherein, can use mol ratio is 3: 97 H
2O
2And H
2The mixture of O at room temperature carries out etching, Ge semiconductor layer 305 is carried out " the Dissolution of Germanium in Aqueous Hydrogen Peroxide Solution " that etched more specifically details can be delivered at Journal of the Electrochemical Society referring to N.Cerniglia and P.Wang, vol.109, No.6 (1962) pp508-512; And the people such as M.F.EHMAN " the Characterisation of Thin Surface Films on Germanium in Various Solvents by Ellipsometry " that deliver at Journal of Materials Science, 6 (1971), pp969-973.
Be noted that in some embodiments of the invention, also can not carry out etching step 220.
Then, in the step 230 of Fig. 2, the epitaxial semiconductor layer 320 that is doped at the both sides of Ge semiconductor layer 305 selective epitaxial growth, the source drain extension region (referring to Fig. 3 C) of raising with formation.
Described selective epitaxial growth step is only carried out in the position that has the germanium atom that is used as " seed crystal ".Therefore, the epitaxial semiconductor layer 320 that is doped at the both sides of Ge semiconductor layer 305 selective epitaxial growth of described selective epitaxial growth step.The source drain extension region that the described epitaxial semiconductor layer that is doped 320 is raised formation.In addition, described selective epitaxial growth step also forms epitaxial semiconductor layer 325 (epitaxial semiconductor layer 325 can be removed) simultaneously in subsequent step around grid layer 350.
In one embodiment, the material of epitaxial semiconductor layer 320 is heavily doped germanium.For example can adopt following condition to carry out selective epitaxial growth: can use quick hot CVD instrument to carry out described selective epitaxial growth, wherein, H
2Flow be 10～50SLM, be preferably 30SLM, as the GeH in Ge source
4Flow be 100～300SCCM, alternatively, can also introduce HCl, its flow for example is 50～300SCCM, mol ratio is 1: 99 AsH
3And H
2Mixture, mol ratio is 1: 99 B
2H
6And H
2Mixture or the mol ratio PH that is 1: 99
3And H
2Mixture, flow for example is about 90SCCM, temperature is approximately 400-600 ℃, for example is 500 ℃, and pressure is approximately 0.05-1.0 holder, for example is 0.07 holder.In one embodiment, can adopt B
2H
6As dopant, doping content for example can be 5.0 * 10
19～5.0 * 10
21Cm
-3
Incidentally, in epitaxial growth steps 230, preferably do not carry out the pre-heat treatment.This is because the pre-heat treatment is used hydrogen and the temperature more than 800 ℃ usually, even and the processing of 800 ℃ low-temperature prewarming also locates to introduce crystal defect with near the interface (STI) between for example Si oxide and substrate.
Incidentally, because the growth of native oxide, therefore the queuing time (queue time) (being the time interval between etching step 220 and the epitaxial growth steps 230) between etching step 220 and the epitaxial growth steps 230 preferably less than 2 hours, is more preferably less than 1 hour.
According to above processing, formed a kind of semiconductor device (referring to Fig. 3 C).Described semiconductor device comprises: at the laminated construction that is patterned that Semiconductor substrate 300 forms, described laminated construction comprises Ge semiconductor layer 305, gate dielectric layer 340 and grid layer 350 from bottom to up successively; And in the epitaxial semiconductor layer that is doped 320 of the both sides of Ge semiconductor layer 305 selective epitaxial growth.Wherein, as described in below inciting somebody to action, epitaxial semiconductor layer 320 forms the source drain extension region of raising, and Ge semiconductor layer 305 is as channel region.
Be noted that, with compare with the prior art that annealing forms the source drain extension region by Implantation, in the present invention, thereby form the source drain extension region owing to forming the epitaxial semiconductor layer 320 that is doped by extension, therefore, the doping content of epitaxial semiconductor layer 320 (being the source drain extension region) can higher (being heavy doping), and for example, it can be 5.0 * 10
19～5.0 * 10
21Cm
-3And dopant can be activated largely, thereby crystal defect is less.This can advantageously reduce to accumulate resistance, thereby increases transistorized drive current.
And, with compare with the prior art that annealing forms the source drain extension region by Implantation, in the present invention, thereby form the source drain extension region owing to forming the epitaxial semiconductor layer 320 that is doped by extension, therefore, the thickness of epitaxial semiconductor layer 320 (being the source drain extension region) can be less, and for example, it can be 5～50nm.In some embodiments of the invention, the thickness of epitaxial semiconductor layer 320 is less than 20nm, even less than 10nm.This can advantageously reduce junction capacitance, thereby improves transistorized performance.
In addition, the molten annealing in laser fusion/Asia needs complicated technique adjustment, and the high temperature (for example, can reach more than 1300 ℃) of the molten annealing in laser fusion/Asia may be introduced at the channel region place defective.By contrast, forming by extension among the present invention of source drain extension region, because the temperature lower (for example, 620～800 ℃) of extension is therefore less to the damage of channel region.
In addition, in the present invention, formed source drain extension region is positioned on the surface of Semiconductor substrate 300, and therefore formed source drain extension region is the source drain extension region of raising.The structure of this source drain extension region of raising can further reduce junction capacitance, thereby further improves transistorized performance.
Incidentally, forming in the prior art of source drain extension region by Implantation and annealing, the dopant of injection not only can spread in the vertical, but also can adversely spread in the horizontal.By contrast, in the present invention, owing to can control preferably by the undercutting amount of Ge semiconductor layer 305 length of source drain extension region, therefore be conducive to reduce further junction capacitance.
After the source drain extension region that formation is raised, referring to Fig. 3 D, can form sidewall spacer 360 and 365, interlevel dielectric layer 370 and the source-drain area (not shown) of laminated construction.
Sidewall spacer 360,365 and material and the formation method of interlevel dielectric layer 370 be not particularly limited.For example, sidewall spacer 360,365 can be respectively silicon nitride and Si oxide, and, can form by ald (ALD) good by spreadability and that temperature is low.After forming sidewall spacer 360,365 by deposition and etching, carry out the deposition of interlevel dielectric layer 370, then carry out chemico-mechanical polishing (CMP), to obtain the structure such as Fig. 3 D.
And, for example, can after forming sidewall spacer 360,365 and before forming interlevel dielectric layer 370, form the source-drain area (not shown).Source-drain area can form by Implantation and the annealing in process of routine, also can form the source-drain area such as other type of the source-drain area of raising.
Next, in the step 240 of Fig. 2, gate dielectric layer 340 and grid layer 350 are replaced with high-K gate dielectric layer 344 and metal gate layers 355, and stay Ge semiconductor layer 305 as channel region (referring to Fig. 3 E～3F).
At first, remove successively grid layer 350 and gate dielectric layer 340 and stay Ge semiconductor layer 305, to form groove 375 (referring to Fig. 3 E).
The method of removing grid layer 350 and gate dielectric layer 340 is not particularly limited.For example, can adopt the whole bag of tricks that comprises dry ecthing and wet etching optionally to etch away grid layer 350 and gate dielectric layer 340, thereby form groove 375.In addition, the epitaxial semiconductor layer 325 that forms around grid layer 350 is also etched.
Then, in groove 375, form successively high-K gate dielectric layer 344 and metal gate layers 355 (referring to Fig. 3 F).
The material of high-K gate dielectric layer 344 is not particularly limited, and it is such as thinking HfO, HfSiO, LaO, ZrO, ZrSiO, TaO, BST, BaTiO, SrTiO, YO, AlO, PbScTaO, PbZnNb etc.The thickness of high-K gate dielectric layer 344 for example less than
Shown in Fig. 3 F, formed high-K gate dielectric layer 344 is the bottom of covering groove 375 not only, but also the sidewall of covering groove 375, that is, high-K gate dielectric layer 344 is essentially U-shaped.
In groove 375, form after the high-K gate dielectric layer 344 as backing layer (lining layer), in groove 375, deposit with planarization and form metal gate layers 355, thereby the high-K gate dielectric layer 344 that obtains shown in Fig. 3 F is the structure that U-shaped and metal gate layers 355 are surrounded by high-K gate dielectric layer 344.The material of metal gate layers 355 is not particularly limited.For example, for N-shaped metal gate layers 355, can use Hf, Zr, Ti, Ta, Al, HfC, ZrC, TiC, TaC, AlC etc., its work function is about 3.9～4.2eV, and its thickness for example is
For p-type metal gate layers 355, can use Ru, Pa, Pt, Co, Ni, RuO etc., its work function is about 4.9～5.2eV, and its thickness for example is
According to above processing, formed a kind of semiconductor device (referring to Fig. 3 F).In described semiconductor device, than the semiconductor device shown in Fig. 3 C and Fig. 3 D, gate dielectric layer 340 and grid layer 350 are replaced with high-K gate dielectric layer 344 and metal gate layers 355.
Behind rear high-k dielectrics of the present invention in the technique of grid, gate dielectric layer 340 is replaced with high-K gate dielectric layer 344 forming as after the epitaxial semiconductor layer 320 of source drain extension region, the high-K gate dielectric layer that the reducibility gas when having avoided thus owing to epitaxial growth causes deteriorated.By contrast, formerly in the technique of high-k dielectrics elder generation grid, when utilizing epitaxy method to form the source drain extension region, the reproducibility of the high-K gate dielectric layer that the reducibility gas during owing to epitaxial growth causes is reacted, so high-K gate dielectric layer is by deteriorated.
Be noted that in some embodiments of the invention, also can not carry out replacement step 240.
So far, semiconductor device of the present invention and manufacture method thereof have been described in detail.For fear of covering design of the present invention, details more well known in the art are not described.Those skilled in the art can easily understand how to implement technical scheme disclosed herein according to top description.
Although described the present invention with reference to exemplary embodiment, should be understood that to the invention is not restricted to disclosed exemplary embodiment.To those skilled in the art clearly, exemplary embodiment that can be more than revising under the condition that does not deviate from scope and spirit of the present invention.The scope of appended claim should be endowed the widest explanation, with the 26S Proteasome Structure and Function that comprises all such modifications and be equal to.
Claims (18)
1. a semiconductor device is characterized in that, described semiconductor device comprises:
At the laminated construction that is patterned that Semiconductor substrate forms, described laminated construction comprises Ge semiconductor layer, gate dielectric layer and grid layer from bottom to up successively;
In the epitaxial semiconductor layer that is doped of the both sides of described Ge semiconductor layer selective epitaxial growth,
Wherein, described epitaxial semiconductor layer forms the source drain extension region of raising, and described Ge semiconductor layer is as channel region.
2. semiconductor device as claimed in claim 1 is characterized in that, the doping content of described epitaxial semiconductor layer is 5.0 * 10
19～5.0 * 10
21Cm
-3
3. semiconductor device as claimed in claim 1 is characterized in that, the thickness of described epitaxial semiconductor layer is 5～50nm.
4. semiconductor device as claimed in claim 1 is characterized in that, described semiconductor device is the PMOS transistor.
5. semiconductor device as claimed in claim 1 is characterized in that, described epitaxial semiconductor layer is germanium layer.
6. semiconductor device as claimed in claim 1 is characterized in that, by undercutting, and the total length that described Ge semiconductor layer is fallen by undercutting is 10～20% of grid length with respect to described gate dielectric layer at the two ends of described Ge semiconductor layer.
7. such as the described semiconductor device of any one among the claim 1-6, it is characterized in that, described gate dielectric layer and described grid layer are replaced by high-K gate dielectric layer and metal gate layers.
8. semiconductor device as claimed in claim 7 is characterized in that, described high-K gate dielectric layer is essentially U-shaped, and described metal gate layers is surrounded by described high-K gate dielectric layer.
9. the manufacture method of a semiconductor device is characterized in that, described manufacture method comprises the steps:
Form the laminated construction that is patterned in Semiconductor substrate, described laminated construction comprises Ge semiconductor layer, gate dielectric layer and grid layer from bottom to up successively;
The epitaxial semiconductor layer that is doped at the both sides of described Ge semiconductor layer selective epitaxial growth, the source drain extension region of raising with formation; And
Described gate dielectric layer and described grid layer are replaced with high-K gate dielectric layer and metal gate layers, and stay described Ge semiconductor layer as channel region.
10. manufacture method as claimed in claim 9 is characterized in that, the doping content of described epitaxial semiconductor layer is 5.0 * 10
19～5.0 * 10
21Cm
-3
11. manufacture method as claimed in claim 9 is characterized in that, the thickness of described epitaxial semiconductor layer is 5～50nm.
12. manufacture method as claimed in claim 9 is characterized in that, described semiconductor device is the PMOS transistor.
13. manufacture method as claimed in claim 9 is characterized in that, described epitaxial semiconductor layer is germanium layer.
14. manufacture method as claimed in claim 13 is characterized in that, the condition of described selective epitaxial growth is as follows: H
2Flow be 10～50SLM, GeH
4Flow be 100～300SCCM, and mol ratio is 1: 99 AsH
3And H
2Mixture, mol ratio is 1: 99 B
2H
6And H
2Or mol ratio is 1: 99 PH
3And H
2The flow of mixture be about 90SCCM, temperature is approximately 530 ℃, and pressure is approximately 0.07 holder.
15. manufacture method as claimed in claim 9, it is characterized in that, described manufacture method further comprises the steps: after the described laminated construction of formation and is forming before the described source drain extension region of raising, described Ge semiconductor layer is carried out etching, with the two ends with respect to the described Ge semiconductor layer of described gate dielectric layer undercutting
Wherein, the total length that fallen by undercutting of described Ge semiconductor layer is 10～20% of grid length.
16. manufacture method as claimed in claim 15 is characterized in that,
Be 3: 97 H by mol ratio
2O
2And H
2The described Ge semiconductor layer of at room temperature etching of the mixture of O.
17. such as the described manufacture method of any one among the claim 9-16, it is characterized in that, the step that described gate dielectric layer and described grid layer is replaced with high-K gate dielectric layer and metal gate layers comprises the steps:
Form the sidewall spacer of described laminated construction;
Remove described grid layer and described gate dielectric layer, between described sidewall spacer, to form groove;
Form the bottom of the described groove of covering and the high-K gate dielectric layer of sidewall; And
The metal gate layers that formation is surrounded by described high-K gate dielectric layer.
18. manufacture method as claimed in claim 9 is characterized in that, described manufacture method further comprises the steps: to be right after after forming described sidewall spacer and forms source-drain area.
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| CN101027763A (en) * | 2004-09-29 | 2007-08-29 | 英特尔公司 | Metal gate transistors with epitaxial source and drain regions |
| US7615458B2 (en) * | 2007-06-19 | 2009-11-10 | Texas Instruments Incorporated | Activation of CMOS source/drain extensions by ultra-high temperature anneals |
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| CN1543679A (en) * | 2002-07-12 | 2004-11-03 | ض� | Process for ultra-thin body soi devices that incorporate epi silicon tips and article made thereby |
| JP2005056900A (en) * | 2003-08-04 | 2005-03-03 | Sharp Corp | Method of manufacturing semiconductor device |
| CN1624932A (en) * | 2003-12-05 | 2005-06-08 | 株式会社东芝 | Semiconductor device |
| CN101027763A (en) * | 2004-09-29 | 2007-08-29 | 英特尔公司 | Metal gate transistors with epitaxial source and drain regions |
| US7615458B2 (en) * | 2007-06-19 | 2009-11-10 | Texas Instruments Incorporated | Activation of CMOS source/drain extensions by ultra-high temperature anneals |
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