CN102891060B - Hot cathode ion source system - Google Patents
Hot cathode ion source system Download PDFInfo
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- CN102891060B CN102891060B CN201110202481.0A CN201110202481A CN102891060B CN 102891060 B CN102891060 B CN 102891060B CN 201110202481 A CN201110202481 A CN 201110202481A CN 102891060 B CN102891060 B CN 102891060B
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- electrode
- conductor
- ion source
- source system
- hot cathode
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- 239000004020 conductor Substances 0.000 claims abstract description 46
- 239000011810 insulating material Substances 0.000 claims description 27
- 230000001629 suppression Effects 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 abstract 1
- 238000009434 installation Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
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- Electron Sources, Ion Sources (AREA)
Abstract
The invention discloses a hot cathode ion source system; the hot cathode ion source system comprises a plurality of electrodes and a plurality of feed-through, wherein the feed-through respectively correspond to the plurality of electrodes; each feed-through comprises a first conductor conducted to the corresponding electrode; and the plurality of electrodes are fixedly connected with each other by insulation materials. The hot cathode ion source system disclosed by the invention has the advantages of simple and reliable structures and great convenience for assembling and disassembling.
Description
Technical field
The present invention relates to a kind of ion source system, particularly relate to a kind of hot cathode ion source system.
Background technology
Ion source system is a requisite assembly in ion implantor.It is just a kind of common hot cathode ion source system shown in Fig. 1.As shown in the assembly that represented by solid line in Fig. 1, when this hot cathode ion source system is a three-electrode system, it will comprise a plasma electrode 1 ', and suppress pole 2 ' and an earth electrode 3 ', this plasma electrode 1 ' is in higher positive potential (such as 10kV), this suppression pole 2 ' is in lower negative potential (such as-10kV), and this earth electrode 3 ' is then in zero potential.As shown in all components in Fig. 1, when this hot cathode ion source system is one or four electrode system, they are except above-mentioned three electrodes, between this plasma electrode 1 ' and this suppression pole 2 ', also will have a gradient electrode 4 ' (being represented by dotted lines in FIG), this gradient electrode 4 ' is in lower positive potential for this plasma electrode 1 '.
In existing hot cathode ion source system, each above-mentioned electrode all needs to utilize complicated mechanical electric equipment to realize accurate mobile or location usually.And when injection task is comparatively stablized single, such as when performing the ion implantation of ribbon ion beam to solar wafer, if still utilize above-mentioned mechanical electric equipment move or locate each electrode, then can cause the complicated of control mode on the contrary, higher equipment cost can be introduced in addition.
In addition, continue with reference to figure 1, because each above-mentioned electrode is all in a vacuum chamber 5 ', therefore in order to make each electrode can be on default current potential, just need electric supply installation outside with this vacuum chamber 5 ' respectively for each electrode or earthing device conducting by feedthrough (feed through) 6 '.Just be an existing feedthrough (for the connection status of this plasma electrode 1 ' with its feedthrough) shown in Fig. 2, feedthrough all has one first conductor 61 ' usually, one end 611 ' of this first conductor 61 ' is in the outside of this vacuum chamber 5 ', for connecting electric supply installation or earthing device, the other end 612 ' of this first conductor 61 ' is then in the inside of this vacuum chamber 5 ', this end 612 ' is then again by a soft wire 62 ' conducting extremely corresponding electrode, namely one end 622 ' of this wire 62 ' will be fixedly connected on corresponding electrode when mounted, the other end 621 ' of this wire 62 ' then can be fixed on the end 612 ' of this first conductor 61 '.Like this when dismantling whole hot cathode ion source system, affixed the involving of this wire 62 ', just can cause cannot directly splitting out each electrode, but must first feedthrough 6 ' be removed, destroy this wire 62 ' thus and successfully can split out electrode, this is obviously extremely inconvenience.
Summary of the invention
The technical problem to be solved in the present invention is the defect of the too complicated and dismounting of locate mode in order to overcome each electrode in prior art extremely inconvenience, provides mutually affixed therefore simple and reliable for structure between each electrode a kind of and dismounting hot cathode ion source system extremely easily.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of hot cathode ion source system, it comprises multiple electrode and multiple feedthroughs corresponding to the plurality of electrode respectively, each feedthrough includes first conductor of a conducting to corresponding electrode, its feature is, adopts insulating material mutually affixed between the plurality of electrode.
By by mutually affixed between each electrode, the overall structure of this hot cathode ion source system of the present invention just can become more simple and reliable, under the prerequisite saving the existing complicated machinery electric equipment for controlling the position of each electrode completely, also can ensure to draw ion beam in high quality.
Preferably, this hot cathode ion source system is the hot cathode ion source system of the ion implantation for solar wafer.That is, this hot cathode ion source system of the present invention is particularly useful for the application scenario of the ion implantation of solar wafer.
Preferably, when this hot cathode ion source system is a three-electrode system, the plurality of electrode is that a plasma electrode, suppresses pole and an earth electrode, adopt insulating material mutually affixed between this plasma electrode and this earth electrode, between this suppression pole and this earth electrode, adopt insulating material mutually affixed.
Adopt the benefit of above-mentioned affixed mode for: with reference to known described in background technology, this plasma electrode is in higher positive potential, this suppression pole is in lower negative potential, to be connected with this earth electrode respectively both them, just potential difference that this insulating material bears can be made less, ensure that this insulating material does not have breakdown risk thus, thus ensure the operational reliability of whole system.And if this plasma electrode is extremely directly connected with this suppression by selection, then will inevitably cause occurring great potential difference on this insulating material, this will be unfavorable for the reliability service of whole system.
Preferably, when this hot cathode ion source system is one or four electrode system, the plurality of electrode is a plasma electrode, a gradient electrode, suppresses pole and an earth electrode, adopt insulating material mutually affixed between this plasma electrode and this earth electrode, adopt insulating material mutually affixed between this suppression pole and this earth electrode, between this gradient electrode and this suppression pole, adopt insulating material mutually affixed.
With the situation of three-electrode system similarly, adopt the benefit of above-mentioned affixed mode for: with reference to known described in background technology, this plasma electrode is in higher positive potential, this gradient electrode is in lower positive potential, this suppression pole is in lower negative potential, this affixed mode can make potential difference that this insulating material bears less, ensure that this insulating material does not have breakdown risk thus, thus ensure the operational reliability of whole system.
Preferably, this insulating material is pottery.
Preferably, each feedthrough all also comprises one second conductor, and this first conductor and/or this second conductor have elasticity, and one end of this second conductor is affixed to this first conductor, the other end is for being closely against corresponding electrode.
This second conductor is adopted to instead of this wire 62 ' of the prior art in the present invention, under this first conductor and/or this second conductor have flexible prerequisite: when 1) installing, only need be closely against on corresponding electrode by this second conductor, the elasticity of this first conductor and/or this second conductor will automatically ensure that the Contact of this second conductor and corresponding electrode is good; 2), during dismounting, owing to no longer including involving of this wire 62 ', can directly be split out by each electrode, once move electrode far away, then the contact between this second conductor and corresponding electrode just can disconnect automatically.This greatly can improve the dismounting convenience of this hot cathode ion source system undoubtedly.
Positive progressive effect of the present invention is: this hot cathode ion source system of the present invention is not only simple and reliable for structure, and dismounting is extremely convenient.
Accompanying drawing explanation
Fig. 1 is the structural representation of an existing hot cathode ion source system.
Fig. 2 is the connection status schematic diagram between an existing feedthrough and corresponding electrode.
Fig. 3 is the structural representation of this hot cathode ion source system of the present invention.
Fig. 4 is the connection status schematic diagram between this feedthrough and corresponding electrode adopted in the present invention.
Embodiment
Present pre-ferred embodiments is provided, to describe technical scheme of the present invention in detail below in conjunction with accompanying drawing.
This hot cathode ion source system of the present invention is on the architecture basics of existing hot cathode ion source system, insulating material is adopted to get up mutually affixed between each electrode, so just, the complicated machinery electric equipment of the position for controlling each electrode can being saved, making the simple and reliable for structure of this hot cathode ion source system.Such hot cathode ion source system is particularly useful for the application scenario of the ion implantation of solar wafer.
Embodiment 1
In the present embodiment, this hot cathode ion source system adopts a three-electrode system.Shown in the assembly represented by solid line in figure 3, this hot cathode ion source system comprises a plasma electrode 1, identical with existing structure and suppresses pole 2 and an earth electrode 3, but unlike the prior art, adopt insulating material 4 by mutually affixed and by mutually affixed between this suppression pole 2 and this earth electrode 3 between this plasma electrode 1 and this earth electrode 3 in the present embodiment.
Affixed mode although it is so can make potential difference that this insulating material 4 bears lower, but also can take other various feasible affixed mode in the present invention.
Embodiment 2
In the present embodiment, this hot cathode ion source system adopts one or four electrode systems.Shown in all components in figure 3, this hot cathode ion source system has set up the gradient electrode 5 identical with existing structure be illustrated by the broken lines on the basis of embodiment 1, but unlike the prior art, on the basis of the firmware mode between the electrode of embodiment 1, in the present embodiment, adopt this insulating material 4 by mutually affixed between this gradient electrode 5 and this suppression pole 2 further.
Affixed mode although it is so can make potential difference that this insulating material 4 bears lower, but also can take other various feasible affixed mode in the present invention.
Wherein, in embodiment 1 and embodiment 2, this insulating material 4 all can adopt such as pottery.And in embodiment 1 and embodiment 2, each electrode all adopts electric supply installation or the earthing device conducting of existing feedthrough and vacuum chamber 6 outside.
Embodiment 3
The present embodiment, on the basis of embodiment 1 and embodiment 2, improves existing feedthrough again further.Particularly as shown in Figure 4 (for the connection status of this plasma electrode 1 with its feedthrough), this feedthrough 7 adopted in the present invention has one first conductor 71 in the same manner as existing feedthrough, one end 711 of this first conductor 71 be in this vacuum chamber 6 outside, for connecting electric supply installation or earthing device, the other end 712 of this first conductor 71 is then in the inside of this vacuum chamber 6.
With existing feedthrough unlike, this feedthrough 7 adopted in the present embodiment uses one second conductor 72 to instead of the wire 62 ' described in background technology, and in the present embodiment this first conductor 71 and/or this second conductor 72 be have flexible, one end 721 of this second conductor 72 is affixed with the end 712 of this first conductor 71, and the other end 722 of this second conductor 72 is for being closely against corresponding electrode.
The entirety formed due to this first conductor 71 and this second conductor 72 has certain elasticity, therefore when mounted, position between each feedthrough 7 and corresponding electrode only need be suitably set, under the elastically-deformable prerequisite occurring to a certain degree with the entirety formed at this first conductor 71 and this second conductor 72, the end 722 of this second conductor 72 is contacted with corresponding electrode, then such elastic deformation just can ensure that the end 722 of this second conductor 72 contacts and be pressed in well on corresponding electrode.And when dismantling, then directly can split out each electrode easily, once be moved by electrode far, the contact between feedthrough and corresponding electrode just can disconnect naturally, and feedthrough must be removed in advance in the prior art without the need to picture, then can split out electrode.
In sum, this hot cathode ion source system of the present invention is not only simple and reliable for structure, and dismounting is extremely convenient.
Although the foregoing describe the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is defined by the appended claims.Those skilled in the art, under the prerequisite not deviating from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these change and amendment all falls into protection scope of the present invention.
Claims (4)
1. a hot cathode ion source system, it comprises multiple electrode and multiple feedthroughs corresponding to the plurality of electrode respectively, each feedthrough includes first conductor of a conducting to corresponding electrode, it is characterized in that, adopt insulating material mutually affixed between the plurality of electrode, this hot cathode ion source system is the hot cathode ion source system of the ion implantation for solar wafer, the plurality of electrode is a plasma electrode, one suppresses pole and an earth electrode, adopt insulating material mutually affixed between this plasma electrode and this earth electrode, adopt insulating material mutually affixed between this suppression pole and this earth electrode, each feedthrough all also comprises one second conductor, this first conductor and/or this second conductor have elasticity, one end and this first conductor of this second conductor are affixed, the other end is for being closely against corresponding electrode.
2. hot cathode ion source system as claimed in claim 1, is characterized in that, this insulating material is pottery.
3. a hot cathode ion source system, it comprises multiple electrode and multiple feedthroughs corresponding to the plurality of electrode respectively, each feedthrough includes first conductor of a conducting to corresponding electrode, it is characterized in that, adopt insulating material mutually affixed between the plurality of electrode, this hot cathode ion source system is the hot cathode ion source system of the ion implantation for solar wafer, the plurality of electrode is a plasma electrode, one gradient electrode, one suppresses pole and an earth electrode, adopt insulating material mutually affixed between this plasma electrode and this earth electrode, adopt insulating material mutually affixed between this suppression pole and this earth electrode, adopt insulating material mutually affixed between this gradient electrode and this suppression pole, each feedthrough all also comprises one second conductor, this first conductor and/or this second conductor have elasticity, one end and this first conductor of this second conductor are affixed, the other end is for being closely against corresponding electrode.
4. hot cathode ion source system as claimed in claim 3, is characterized in that, this insulating material is pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110202481.0A CN102891060B (en) | 2011-07-19 | 2011-07-19 | Hot cathode ion source system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110202481.0A CN102891060B (en) | 2011-07-19 | 2011-07-19 | Hot cathode ion source system |
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| CN102891060A CN102891060A (en) | 2013-01-23 |
| CN102891060B true CN102891060B (en) | 2015-02-11 |
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| CN201110202481.0A Active CN102891060B (en) | 2011-07-19 | 2011-07-19 | Hot cathode ion source system |
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| JP6076838B2 (en) * | 2013-05-31 | 2017-02-08 | 住友重機械イオンテクノロジー株式会社 | Insulation structure and insulation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1953129A (en) * | 2005-10-20 | 2007-04-25 | 日新意旺机械股份有限公司 | Method of operating ion source and ion implanting apparatus |
| CN101071752A (en) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | High current ionic current implanted system and improved device and insulator thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08124514A (en) * | 1994-10-25 | 1996-05-17 | Mitsubishi Heavy Ind Ltd | High voltage isolator |
| US7842931B2 (en) * | 2008-09-25 | 2010-11-30 | Axcelis Technologies, Inc. | Extraction electrode manipulator |
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2011
- 2011-07-19 CN CN201110202481.0A patent/CN102891060B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1953129A (en) * | 2005-10-20 | 2007-04-25 | 日新意旺机械股份有限公司 | Method of operating ion source and ion implanting apparatus |
| CN101071752A (en) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | High current ionic current implanted system and improved device and insulator thereof |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平8-124514A 1996.05.17 * |
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Address after: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee after: KINGSTONE SEMICONDUCTOR COMPANY LTD. Address before: 201203 Shanghai City Newton Road, Zhangjiang High Tech Park of Pudong New Area No. 200 Building No. 7, No. 1 Patentee before: Shanghai Kaishitong Semiconductor Co., Ltd. |
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Denomination of invention: Hot cathode ion source system Effective date of registration: 20180315 Granted publication date: 20150211 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: KINGSTONE SEMICONDUCTOR COMPANY LTD. Registration number: 2018310000011 |
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Date of cancellation: 20180614 Granted publication date: 20150211 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: KINGSTONE SEMICONDUCTOR COMPANY LTD. Registration number: 2018310000011 |
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Denomination of invention: Hot cathode ion source system Effective date of registration: 20180903 Granted publication date: 20150211 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: KINGSTONE SEMICONDUCTOR COMPANY LTD. Registration number: 2018310000053 |
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Date of cancellation: 20190508 Granted publication date: 20150211 Pledgee: Pudong Shanghai technology financing Company limited by guarantee Pledgor: KINGSTONE SEMICONDUCTOR COMPANY LTD. Registration number: 2018310000053 |