CN102890175A - Magneto-resistor integrated chip for current sensor - Google Patents
Magneto-resistor integrated chip for current sensor Download PDFInfo
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- CN102890175A CN102890175A CN2012104112825A CN201210411282A CN102890175A CN 102890175 A CN102890175 A CN 102890175A CN 2012104112825 A CN2012104112825 A CN 2012104112825A CN 201210411282 A CN201210411282 A CN 201210411282A CN 102890175 A CN102890175 A CN 102890175A
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Abstract
The invention discloses a magneto-resistor integrated chip for a current sensor. The magneto-resistor integrated chip comprises 4N (N=1, 2, 3, 4...) chip units of the same structure; each chip unit is of a multi-layer film structure and comprises a compensating lead wire layer, a magneto-resistor element and at least one soft magnetic layer; an insulating layer is arranged in the gaps between the compensating lead wire layer, the magneto-resistor element and the soft magnetic layer; the shape of the insulating layer is matched with those of the compensating lead wire layer, the magneto-resistor element and the soft magnetic layer; the compensating lead wire layers of the 4N chip units are formed integrally; the compensating lead wire layers are U-shaped in a plane parallel to the substrate; and the magneto-resistor elements of the 4N chip units are the same and are connected to form a bridge. The magneto-resistor integrated chip has the advantages that the size is reduced to millimeter magnitude from centimeter magnitude, the fabrication cost is obviously reduced, the consistency of the product is good and the anti-interference capability for the external magnetic fields is obviously enhanced.
Description
Technical field
The present invention relates to the integrated chip technical field for sensor, particularly a kind of magneto-resistor integrated chip for current sensor.
Background technology
The application of current sensor in industry is very extensive.As shown in Figure 1, line of induction ring type current sensor of the prior art comprises iron core 1, coil 2, sensitive element 3, resistance 4 and operational amplifier 5.The output terminal of sensitive element 3 is connected with the input end of operational amplifier 5, and the output terminal of operational amplifier 5 is connected with an end of coil 2, and the other end of coil 2 is connected with an end of resistance 4, the other end ground connection of resistance 4.Wire 6 to be measured passes from unshakable in one's determination 1 interior space.Sensitive element 3 general Hall element or the magnetoresistive elements of adopting.When having electric current to flow through in the wire 6 to be measured, the voltage by measuring resistance 4 two ends can obtain flowing through the size of current in the wire 6 to be measured.But there is following defective in above-mentioned current sensor:
(1) because the size of unshakable in one's determination and coil is larger, the size of whole current sensor is also larger, is generally a centimetre magnitude;
(2) cost of manufacture is very high;
(3) consistance of product is relatively poor;
(4) antijamming capability of external magnetic field is relatively poor.
Summary of the invention
The purpose of this invention is to provide a kind of magneto-resistor integrated chip for current sensor.
Magneto-resistor integrated chip for current sensor provided by the invention comprises 4N (N=1,2,3,4 ...) chip unit that individual structure is identical, each described chip unit is multi-layer film structure, and each described chip unit comprises compensating wire layer, magnetoresistive element and at least one soft magnetosphere;
Described compensating wire layer, described magnetoresistive element and described soft magnetosphere gap each other are provided with insulation course, the form fit of the shape of described insulation course and described compensating wire layer, described magnetoresistive element and described soft magnetosphere;
The compensating wire layer of a described 4N chip unit is integrally formed, and this compensating wire layer is " U " font within being parallel to the plane of substrate;
The magnetoresistive element of a described 4N chip unit is identical, and the magnetoresistive element of a described 4N chip unit connects and composes an electric bridge.
Preferably, described at least one soft magnetosphere is the first soft magnetosphere, the second soft magnetosphere and the 3rd soft magnetosphere, described the second soft magnetosphere, described the 3rd soft magnetosphere and described magnetoresistive element are located on the substrate, described magnetoresistive element is located in the gap between described the second soft magnetosphere and described the 3rd soft magnetosphere, the thickness of described magnetoresistive element is less than the thickness of described the second soft magnetosphere and described the 3rd soft magnetosphere, described compensating wire layer is located on described the second soft magnetosphere and described the 3rd soft magnetosphere, and described the first soft magnetosphere is located on the compensating wire layer.
Preferably, described the second soft magnetosphere and the 3rd soft magnetosphere are rectangular within being parallel to the plane of substrate.
Preferably, described the second soft magnetosphere and the 3rd soft magnetosphere are trapezoidal within being parallel to the plane of substrate, and the shorter limit of the second soft magnetosphere and the 3rd soft magnetosphere is near magnetoresistive element.
Preferably, described the first soft magnetosphere is " U " font in the plane perpendicular to substrate, and the openend of described the first soft magnetosphere is towards described compensating wire layer, described the second soft magnetosphere and described the 3rd soft magnetosphere.
Preferably, described soft magnetosphere comprises the first end soft magnetosphere, the second end soft magnetosphere, top soft magnetosphere, the first articulamentum and the second articulamentum; Described the first end soft magnetosphere and described the second end soft magnetosphere are located on the substrate, and be provided with the gap between described the first end soft magnetosphere and the second end soft magnetosphere, described the first end soft magnetosphere is connected with described top soft magnetosphere by described the first articulamentum, described the second end soft magnetosphere is connected with described top soft magnetosphere by described the second articulamentum, and described soft magnetosphere is notched annular in the plane perpendicular to substrate; Described magnetoresistive element is located in the gap between described the first end soft magnetosphere and described the second end soft magnetosphere, and the thickness of described magnetoresistive element is less than the thickness of described the first end soft magnetosphere and described the second end soft magnetosphere; Described compensating wire layer is located on described the first end soft magnetosphere and described the second end soft magnetosphere, and described top soft magnetosphere is located on the described compensating wire layer.
Preferably, described the first end soft magnetosphere and described the second end soft magnetosphere are rectangular within being parallel to the plane of substrate.
Preferably, described the first end soft magnetosphere and described the second end soft magnetosphere are trapezoidal within being parallel to the plane of substrate, and the shorter limit of described the first end soft magnetosphere and described the second end soft magnetosphere is near described magnetoresistive element.
Preferably, when N 〉=2, the series connection of the magnetoresistive element of any N chip unit of described magneto-resistor integrated chip and/or a brachium pontis that consists of described electric bridge in parallel.
Preferably, described magnetoresistive element is TMR element, GMR element or AMR element.
The present invention has following beneficial effect:
Compare with the line of induction ring type current sensor of prior art, the magneto-resistor integrated chip for current sensor of the present invention has following advantage:
(1) owing to no longer needing iron core and coil, size is reduced into a millimeter magnitude by a centimetre magnitude, and cost of manufacture obviously reduces simultaneously;
(2) because magneto-resistor integrated chip of the present invention adopts multi-layer film structure, identical layer adopts identical material and a plated film preparation of technique to form in the chip, and the consistance of product is better;
(3) because described magneto-resistor integrated chip adopts bridge structure, the antijamming capability of its external magnetic field obviously strengthens.
Description of drawings
Fig. 1 is the schematic diagram of the line of induction ring type current sensor of prior art;
The vertical view of the magneto-resistor integrated chip that is used for current sensor that Fig. 2 provides for the embodiment of the invention 1;
The cross sectional representation of the chip unit of the magneto-resistor integrated chip that is used for current sensor that Fig. 3 provides for the embodiment of the invention 1;
The vertical view of the magneto-resistor integrated chip that is used for current sensor that Fig. 4 provides for the embodiment of the invention 2;
The cross sectional representation of the chip unit of the magneto-resistor integrated chip that is used for current sensor that Fig. 5 provides for the embodiment of the invention 2;
The vertical view of the magneto-resistor integrated chip that is used for current sensor that Fig. 6 provides for the embodiment of the invention 3;
The cross sectional representation of the chip unit of the magneto-resistor integrated chip that is used for current sensor that Fig. 7 provides for the embodiment of the invention 3;
The vertical view of the magneto-resistor integrated chip that is used for current sensor that Fig. 8 provides for the embodiment of the invention 4.
Embodiment
Below in conjunction with drawings and Examples content of the present invention is further described.
Embodiment 1
The magneto-resistor integrated chip that is used for current sensor that the present embodiment provides comprises for example four chip units, i.e. the first chip unit 11, the second chip unit 12, the 3rd chip unit 13 and four-core blade unit 14, as shown in Figure 2.The structure of the first chip unit 11, the second chip unit 12, the 3rd chip unit 13 and four-core blade unit 14 is all identical, and all is multi-layer film structure.
Introduce the film layer structure of each chip unit of the magneto-resistor integrated chip of the present embodiment as an example of the first chip unit 11 example.As shown in Figure 3, the first chip unit 11 comprises the first soft magnetosphere 111, compensating wire layer 112, the second soft magnetosphere 113, the 3rd soft magnetosphere 114 and magnetoresistive element 115.The second soft magnetosphere 113, the 3rd soft magnetosphere 114 and magnetoresistive element 115 are located on the substrate 116.In the gap of magnetoresistive element 115 between the second soft magnetosphere 113 and the 3rd soft magnetosphere 114, and the thickness of magnetoresistive element 115 is less than the thickness of the second soft magnetosphere 113 and the 3rd soft magnetosphere 114.Compensating wire layer 112 is located on the second soft magnetosphere 113 and the 3rd soft magnetosphere 114.The first soft magnetosphere 111 is located on the compensating wire layer 112.The first soft magnetosphere 111, compensating wire layer 112, the second soft magnetosphere 113, the 3rd soft magnetosphere 114 and magnetoresistive element 115 gap each other are provided with the insulation course (not shown), the form fit of the shape of this insulation course and the first soft magnetosphere 111, compensating wire layer 112, the second soft magnetosphere 113, the 3rd soft magnetosphere 114 and magnetoresistive element 115.The second soft magnetosphere 113 and the 3rd soft magnetosphere 114 are rectangular or trapezoidal in the plane that is parallel to substrate 116.In the present embodiment, the second soft magnetosphere 113 and the 3rd soft magnetosphere 114 are for example trapezoidal in the plane that is parallel to substrate 116, and the shorter limit of the second soft magnetosphere 113 and the 3rd soft magnetosphere 114 has been used for magnet accumulating cap, as shown in Figure 2 near magnetoresistive element 115.Magnetoresistive element 115 is TMR (tunnel magneto resistance) element, GMR (giant magnetoresistance) element or AMR (anisotropic magnetoresistance) element.In the present embodiment, magnetoresistive element 115 is for example TMR element, and magnetoresistive element 115 comprises at least one TMR.When comprising a plurality of TMR in the magnetoresistive element 115, these a plurality of TMR series connection and/or in parallel.In the present embodiment, magnetoresistive element 115 comprises that for example a TMR(is not shown).
The structure of the second chip unit 12, the 3rd chip unit 13 and four-core blade unit 14 and the structure of the first chip unit 11 are identical.
As shown in Figure 2, the compensating wire layer of the second chip unit 12, the 3rd chip unit 13 and four-core blade unit 14 and the compensating wire layer 112 of the first chip unit 11 are integrally formed, and namely the compensating wire layer 112 of the first chip unit 11 also is the compensating wire layer of the second chip unit 12, the 3rd chip unit 13 and four-core blade unit 14.Compensating wire layer 112 is " U " font in the plane that is parallel to substrate 116.The first chip unit 11, the second chip unit 12, the 3rd chip unit 13 and four-core blade unit 14 are along the arrangement mode of compensating wire layer 112 trend as shown in Figure 2.
Magnetoresistive element in the first chip unit 11, the second chip unit 12, the 3rd chip unit 13 and the four-core blade unit 14 is separately as the brachium pontis electric bridge that is electrically connected to form.
During use, the output terminal of the electric bridge that will be made of the magnetoresistive element of four chip units is connected with the input end of operational amplifier (not shown), a free end of the compensating wire layer 112 of described magneto-resistor integrated chip is connected with the output terminal of operational amplifier, another free end of the compensating wire layer 112 of described magneto-resistor integrated chip is connected the other end ground connection of resistance with an end of resistance (not shown).Wire producing to be measured is become U-shaped, and described magneto-resistor chip is placed the top of the wire to be measured of U-shaped.When having electric current to flow through in the wire to be measured, the voltage by the test resistance two ends can obtain to flow through the size of current in the wire to be measured.
Embodiment 2
The magneto-resistor integrated chip that is used for current sensor that the present embodiment provides comprises for example four chip units, i.e. the first chip unit 21, the second chip unit 22, the 3rd chip unit 23 and four-core blade unit 24, as shown in Figure 4.The structure of the first chip unit 21, the second chip unit 22, the 3rd chip unit 23 and four-core blade unit 24 is all identical, and all is multi-layer film structure.
Introduce the film layer structure of each chip unit of the magneto-resistor integrated chip of the present embodiment as an example of the first chip unit 21 example.As shown in Figure 5, the first chip unit 21 comprises the first soft magnetosphere 211, compensating wire layer 212, the second soft magnetosphere 213, the 3rd soft magnetosphere 214 and magnetoresistive element 215.The second soft magnetosphere 213, the 3rd soft magnetosphere 214 and magnetoresistive element 215 are located on the substrate 216.In the gap of magnetoresistive element 215 between the second soft magnetosphere 213 and the 3rd soft magnetosphere 214, and the thickness of magnetoresistive element 215 is less than the thickness of the second soft magnetosphere 213 and the 3rd soft magnetosphere 214.Compensating wire layer 212 is located on the second soft magnetosphere 213 and the 3rd soft magnetosphere 214.The first soft magnetosphere 211 is located on the compensating wire layer 212.The first soft magnetosphere 211 is " U " font in the plane perpendicular to substrate 216, and the openend of the first soft magnetosphere 211 is towards compensating wire layer 212, the second soft magnetosphere 213 and the 3rd soft magnetosphere 214.The first soft magnetosphere 211, compensating wire layer 212, the second soft magnetosphere 213, the 3rd soft magnetosphere 214 and magnetoresistive element 215 gap each other are provided with the insulation course (not shown), the form fit of the shape of this insulation course and the first soft magnetosphere 211, compensating wire layer 212, the second soft magnetosphere 213, the 3rd soft magnetosphere 214 and magnetoresistive element 215.The second soft magnetosphere 213 and the 3rd soft magnetosphere 214 are rectangular or trapezoidal in the plane that is parallel to substrate 216.In the present embodiment, the second soft magnetosphere 213 and the 3rd soft magnetosphere 214 are for example rectangle in the plane that is parallel to substrate 216, as shown in Figure 4.Magnetoresistive element 215 is TMR element, GMR element or AMR element.In the present embodiment, magnetoresistive element 215 is for example GMR element, and magnetoresistive element 215 comprises at least one GMR.When comprising a plurality of GMR in the magnetoresistive element 215, these a plurality of GMR series connection and/or in parallel.In the present embodiment, magnetoresistive element 215 comprises that for example the GMR(of two series connection is not shown).
The structure of the second chip unit 22, the 3rd chip unit 23 and four-core blade unit 24 and the structure of the first chip unit 21 are identical.
As shown in Figure 4, the compensating wire layer of the second chip unit 22, the 3rd chip unit 23 and four-core blade unit 24 and the compensating wire layer 212 of the first chip unit 21 are integrally formed, and namely the compensating wire layer 212 of the first chip unit 21 also is the compensating wire layer of the second chip unit 22, the 3rd chip unit 23 and four-core blade unit 24.Compensating wire layer 212 is " U " font in the plane that is parallel to substrate 216.The first chip unit 21, the second chip unit 22, the 3rd chip unit 23 and four-core blade unit 24 are along the arrangement mode of compensating wire layer 212 trend as shown in Figure 4.
Magnetoresistive element in the first chip unit 21, the second chip unit 22, the 3rd chip unit 23 and the four-core blade unit 24 is separately as the brachium pontis electric bridge that is electrically connected to form.
During use, the output terminal of the electric bridge that will be made of the magnetoresistive element of four chip units is connected with the input end of operational amplifier (not shown), a free end of the compensating wire layer 212 of described magneto-resistor integrated chip is connected with the output terminal of operational amplifier, another free end of the compensating wire layer 212 of described magneto-resistor integrated chip is connected the other end ground connection of resistance with an end of resistance (not shown).Wire producing to be measured is become U-shaped, and described magneto-resistor chip is placed the top of the wire to be measured of U-shaped.When having electric current to flow through in the wire to be measured, the voltage by the test resistance two ends can obtain to flow through the size of current in the wire to be measured.
Embodiment 3
The magneto-resistor integrated chip that is used for current sensor that the present embodiment provides comprises for example four chip units, i.e. the first chip unit 31, the second chip unit 32, the 3rd chip unit 33 and four-core blade unit 34, as shown in Figure 6.The structure of the first chip unit 31, the second chip unit 32, the 3rd chip unit 33 and four-core blade unit 34 is all identical, and all is multi-layer film structure.
Introduce the film layer structure of each chip unit of the magneto-resistor integrated chip of the present embodiment as an example of the first chip unit 31 example.As shown in Figure 7, the first chip unit 31 comprises soft magnetosphere 311, compensating wire layer 312 and magnetoresistive element 313.Soft magnetosphere 311 comprises the first end soft magnetosphere 3111, the second end soft magnetosphere 3112, top soft magnetosphere 3113, the first articulamentum 3114 and the second articulamentum 3115.The first end soft magnetosphere 3111 and the second end soft magnetosphere 3112 are located on the substrate 314, and are provided with the gap between the first end soft magnetosphere 3111 and the second end soft magnetosphere 3112.The first end soft magnetosphere 3111 is connected with top soft magnetosphere 3113 by the first articulamentum 3114; The second end soft magnetosphere 3112 is connected with top soft magnetosphere 3113 by the second articulamentum 3115.Soft magnetosphere 311 is notched annular in the plane perpendicular to substrate.Magnetoresistive element 313 is located in the gap between the first end soft magnetosphere 3111 and the second end soft magnetosphere 3112, and the thickness of magnetoresistive element 313 is less than the thickness of the first end soft magnetosphere 3111 and the second end soft magnetosphere 3112.Compensating wire layer 312 is located on the first end soft magnetosphere 3111 and the second end soft magnetosphere 3112.Top soft magnetosphere 3112 is located on the compensating wire layer 312.Soft magnetosphere 311, compensating wire layer 312 and magnetoresistive element 313 gap each other are provided with the insulation course (not shown), the form fit of the shape of this insulation course and soft magnetosphere 311, compensating wire layer 312 and magnetoresistive element 313.The first end soft magnetosphere 3111 and the second end soft magnetosphere 3112 are rectangular or trapezoidal in the plane that is parallel to substrate 314.In the present embodiment, the first end soft magnetosphere 3111 and the second end soft magnetosphere 3112 are for example rectangle in the plane that is parallel to substrate 314.Magnetoresistive element 313 is TMR element, GMR element or AMR element.In the present embodiment, magnetoresistive element 313 is for example AMR element, and magnetoresistive element 313 comprises at least one AMR.When comprising a plurality of AMR in the magnetoresistive element 313, these a plurality of AMR series connection and/or in parallel.In the present embodiment, magnetoresistive element 313 comprises that for example the AMR(of two parallel connections is not shown).
The structure of the second chip unit 32, the 3rd chip unit 33 and four-core blade unit 34 and the structure of the first chip unit 31 are identical.
As shown in Figure 6, the compensating wire layer of the second chip unit 32, the 3rd chip unit 33 and four-core blade unit 34 and the compensating wire layer 312 of the first chip unit 31 are integrally formed, and namely the compensating wire layer 312 of the first chip unit 31 also is the compensating wire layer of the second chip unit 32, the 3rd chip unit 33 and four-core blade unit 34.Compensating wire layer 312 is " U " font in the plane that is parallel to substrate 314.The first chip unit 31, the second chip unit 32, the 3rd chip unit 33 and four-core blade unit 34 are along the arrangement mode of compensating wire layer 312 trend as shown in Figure 6.
Magnetoresistive element in the first chip unit 31, the second chip unit 32, the 3rd chip unit 33 and the four-core blade unit 34 is separately as the brachium pontis electric bridge that is electrically connected to form.
During use, the output terminal of the electric bridge that will be made of the magnetoresistive element of four chip units is connected with the input end of operational amplifier (not shown), a free end of the compensating wire layer 312 of described magneto-resistor integrated chip is connected with the output terminal of operational amplifier, another free end of the compensating wire layer 312 of described magneto-resistor integrated chip is connected the other end ground connection of resistance with an end of resistance (not shown).Wire producing to be measured is become U-shaped, and described magneto-resistor chip is placed the top of the wire to be measured of U-shaped.When having electric current to flow through in the wire to be measured, the voltage by the test resistance two ends can obtain to flow through the size of current in the wire to be measured.
Embodiment 4
As shown in Figure 8, the magneto-resistor integrated chip that is used for current sensor that the present embodiment provides comprises for example eight chip units, i.e. the first chip unit 41, the second chip unit 42, the 3rd chip unit 43, four-core blade unit 44, the 5th chip unit 45, the 6th chip unit 46, the 7th chip unit 47, the 8th chip unit 48.The chip unit of described magneto-resistor integrated chip adopts the chip unit of the magneto-resistor integrated chip of embodiment 1, embodiment 2 or embodiment 3.The magnetoresistive element of eight chip units of described magneto-resistor integrated chip is identical.In the present embodiment, each chip unit of described magneto-resistor integrated chip comprises that for example the TMR(of three series connection is not shown).The magnetoresistive element of eight chip units of described magneto-resistor integrated chip connects and composes an electric bridge.The magnetoresistive element series connection of any two chip units of described magneto-resistor integrated chip and/or a brachium pontis that consists of described electric bridge in parallel.In the present embodiment, the series connection of the magnetoresistive element of the first chip unit 41 and the 3rd chip unit 43 consists of for example first brachium pontis of described electric bridge; The 5th chip unit 45 and 47 series connection of the 7th chip unit consist of for example second brachium pontis of described electric bridge; The second chip unit 42 and 44 series connection of four-core blade unit consist of for example the 3rd brachium pontis of described electric bridge, and the 6th chip unit 46 and 48 series connection of the 8th chip unit consist of for example the 4th brachium pontis of described electric bridge.
During use, the output terminal of the electric bridge that will be made of the magnetoresistive element of eight chip units is connected with the input end of operational amplifier (not shown), a free end of the compensating wire layer of described magneto-resistor integrated chip is connected with the output terminal of operational amplifier, another free end of the compensating wire layer of described magneto-resistor integrated chip is connected the other end ground connection of resistance with an end of resistance (not shown).Wire producing to be measured is become U-shaped, and described magneto-resistor chip is placed the top of the wire to be measured of U-shaped.When having electric current to flow through in the wire to be measured, the voltage by the test resistance two ends can obtain to flow through the size of current in the wire to be measured.
Should be appreciated that the above detailed description of technical scheme of the present invention being carried out by preferred embodiment is illustrative and not restrictive.Those of ordinary skill in the art is reading on the basis of instructions of the present invention and can make amendment to the technical scheme that each embodiment puts down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. the magneto-resistor integrated chip that is used for current sensor, it is characterized in that, this magneto-resistor integrated chip comprises 4N (N=1,2,3,4 ...) chip unit that individual structure is identical, each described chip unit is multi-layer film structure, each described chip unit comprises compensating wire layer, magnetoresistive element and at least one soft magnetosphere;
Described compensating wire layer, described magnetoresistive element and described soft magnetosphere gap each other are provided with insulation course, the form fit of the shape of described insulation course and described compensating wire layer, described magnetoresistive element and described soft magnetosphere;
The compensating wire layer of a described 4N chip unit is integrally formed, and this compensating wire layer is " U " font within being parallel to the plane of substrate;
The magnetoresistive element of a described 4N chip unit is identical, and the magnetoresistive element of a described 4N chip unit connects and composes an electric bridge.
2. the magneto-resistor integrated chip for current sensor according to claim 1, it is characterized in that, described at least one soft magnetosphere is the first soft magnetosphere, the second soft magnetosphere and the 3rd soft magnetosphere, described the second soft magnetosphere, described the 3rd soft magnetosphere and described magnetoresistive element are located on the substrate, described magnetoresistive element is located in the gap between described the second soft magnetosphere and described the 3rd soft magnetosphere, the thickness of described magnetoresistive element is less than the thickness of described the second soft magnetosphere and described the 3rd soft magnetosphere, described compensating wire layer is located on described the second soft magnetosphere and described the 3rd soft magnetosphere, and described the first soft magnetosphere is located on the compensating wire layer.
3. the magneto-resistor integrated chip for current sensor according to claim 2 is characterized in that, described the second soft magnetosphere and the 3rd soft magnetosphere are rectangular within being parallel to the plane of substrate.
4. the magneto-resistor integrated chip for current sensor according to claim 2, it is characterized in that, described the second soft magnetosphere and the 3rd soft magnetosphere are trapezoidal within being parallel to the plane of substrate, and the shorter limit of the second soft magnetosphere and the 3rd soft magnetosphere is near magnetoresistive element.
5. the magneto-resistor integrated chip for current sensor according to claim 2, it is characterized in that, described the first soft magnetosphere is " U " font in the plane perpendicular to substrate, and the openend of described the first soft magnetosphere is towards described compensating wire layer, described the second soft magnetosphere and described the 3rd soft magnetosphere.
6. the magneto-resistor integrated chip for current sensor according to claim 1 is characterized in that, described soft magnetosphere comprises the first end soft magnetosphere, the second end soft magnetosphere, top soft magnetosphere, the first articulamentum and the second articulamentum;
Described the first end soft magnetosphere and described the second end soft magnetosphere are located on the substrate, and be provided with the gap between described the first end soft magnetosphere and the second end soft magnetosphere, described the first end soft magnetosphere is connected with described top soft magnetosphere by described the first articulamentum, described the second end soft magnetosphere is connected with described top soft magnetosphere by described the second articulamentum, and described soft magnetosphere is notched annular in the plane perpendicular to substrate;
Described magnetoresistive element is located in the gap between described the first end soft magnetosphere and described the second end soft magnetosphere, and the thickness of described magnetoresistive element is less than the thickness of described the first end soft magnetosphere and described the second end soft magnetosphere;
Described compensating wire layer is located on described the first end soft magnetosphere and described the second end soft magnetosphere, and described top soft magnetosphere is located on the described compensating wire layer.
7. the magneto-resistor integrated chip for current sensor according to claim 6 is characterized in that, described the first end soft magnetosphere and described the second end soft magnetosphere are rectangular within being parallel to the plane of substrate.
8. the magneto-resistor integrated chip for current sensor according to claim 6, it is characterized in that, described the first end soft magnetosphere and described the second end soft magnetosphere are trapezoidal within being parallel to the plane of substrate, and the shorter limit of described the first end soft magnetosphere and described the second end soft magnetosphere is near described magnetoresistive element.
9. the magneto-resistor integrated chip for current sensor according to claim 1 is characterized in that, when N 〉=2, and the series connection of the magnetoresistive element of any N chip unit of described magneto-resistor integrated chip and/or a brachium pontis that consists of described electric bridge in parallel.
10. the magneto-resistor integrated chip for current sensor according to claim 1 is characterized in that, described magnetoresistive element is TMR element, GMR element or AMR element.
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| CN108333409A (en) * | 2016-12-30 | 2018-07-27 | 德州仪器公司 | Current measurement based on magnetic field |
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| DE4318716A1 (en) * | 1993-06-07 | 1994-12-08 | Smt & Hybrid Gmbh | Magnetic field sensor in the form of a bridge circuit |
| EP0647853A2 (en) * | 1993-10-12 | 1995-04-12 | Sumitomo Special Metals Company Limited | DC current sensor |
| CN101495874A (en) * | 2006-07-26 | 2009-07-29 | 西门子公司 | Current-sensing apparatus and method for current sensing |
| CN201622299U (en) * | 2009-06-19 | 2010-11-03 | 钱正洪 | Novel giant magneto resistance GMR integrated current sensor |
| CN102323554A (en) * | 2011-05-17 | 2012-01-18 | 杭州电子科技大学 | Integrated coil-biased giant magnetoresistance magneto-dependent sensor |
| CN102590768A (en) * | 2012-03-14 | 2012-07-18 | 江苏多维科技有限公司 | Magneto-resistance magnetic field gradient sensor |
| CN203011980U (en) * | 2012-10-24 | 2013-06-19 | 无锡乐尔科技有限公司 | Magnetic resistance integrated chip used for current sensor |
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| CN105044439A (en) * | 2015-08-26 | 2015-11-11 | 江苏多维科技有限公司 | Tunnel magnetoresistance current sensor |
| CN105044439B (en) * | 2015-08-26 | 2019-02-01 | 江苏多维科技有限公司 | A kind of tunnel magneto resistance current sensor |
| CN108333409A (en) * | 2016-12-30 | 2018-07-27 | 德州仪器公司 | Current measurement based on magnetic field |
| CN108333409B (en) * | 2016-12-30 | 2021-09-14 | 德州仪器公司 | Magnetic field based current measurement |
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