CN102881545B - The method of electron ray source generation device and generation low dose rate electron ray - Google Patents
The method of electron ray source generation device and generation low dose rate electron ray Download PDFInfo
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- CN102881545B CN102881545B CN201210348278.9A CN201210348278A CN102881545B CN 102881545 B CN102881545 B CN 102881545B CN 201210348278 A CN201210348278 A CN 201210348278A CN 102881545 B CN102881545 B CN 102881545B
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Abstract
The invention discloses a kind of electron ray source generation device, for irradiation one shadow surface, comprise one for exporting the electron ray generator of an electron ray, this electron ray sends from an exit facet of this electron ray generator, the transmission path of this electron ray is provided with successively: a baffle, for blocking this electron ray, this baffle has one for leaking the small opening penetrating portions of electronics ray; One scan mechanism, this sweep mechanism is used for scanning in air leaking from this small opening the electron ray penetrated, and enables the electron ray Uniform Irradiation after overscanning on this shadow surface.The invention also discloses a kind of method producing low dose rate electron ray.The present invention can export the electron ray of low dose rate, and structure is simple, with low cost simultaneously.
Description
Technical field
The present invention relates to electron ray field, particularly relate to a kind of electron ray source generation device of low dose rate and produce the method for low dose rate electron ray.
Background technology
Electron ray can be widely used in industrial irradiation processing and scientific experiment.Generally general electron ray generator designs for improving industrial production efficiency, and the output design deflection of electron ray is high-power, high dose rate.Therefore be difficult to utilize these electron ray generators to obtain the electron ray of low dose rate.
When need to use general electron ray generator carry out low dose rate electron ray related application comprise the test of some Irradiation Test of product time, the dose rate lower limit that the dose rate of needs can produce well below universal electric ray generator.General electron ray generator is difficult to meet the demands, or needs significantly to reequip.
Summary of the invention
The technical problem to be solved in the present invention is that the electron ray power in order to overcome electron ray source generation device of the prior art output is large, dose rate is high, at some irradiation test or have in the Product processing of particular/special requirement, required dose rate is well below the dose rate lower limit of the electron ray exported, only has the defect that significantly conversion unit just can meet the demands, thering is provided a kind of without the need to increasing extra control appliance and with low cost, electron ray source generation device and the method for the electron ray of low dose rate can be produced again simultaneously.
The present invention solves above-mentioned technical problem by following technical proposals:
A kind of electron ray source generation device, for irradiation one shadow surface, it comprises one for exporting the electron ray generator of an electron ray, this electron ray sends from an exit facet of this electron ray generator, its feature is, the transmission path of this electron ray being provided with successively: a baffle, for blocking this electron ray, this baffle having one for leaking the small opening penetrating this electron ray of part; One scan mechanism, this sweep mechanism is used for scanning in air leaking from this small opening this electron ray penetrated, and enables this electron ray Uniform Irradiation after overscanning on this shadow surface.Wherein, this electron ray generator adopts electron ray generator general in prior art.
Preferably, the area S of this small opening
cmeet formula:
Wherein S (E) for energy be the aerial collision mass stopping power of electronics of E,
for the Dose Rate needed for this shadow surface, I
bfor the output stream of this electron ray generator is strong, S
efor the area of this exit facet, S
afor the area of this shadow surface, e is the electricity of Single Electron, and η is the utilance of this electron ray.
Those skilled in the art be to be understood that S (E) in above-mentioned formula,
e is the confirmable physical quantity of numerical value.
be the corresponding Dose Rate on this shadow surface that the present invention finally needs to reach, e is constant.S (E) is the function of electron energy, and for the electronics of different-energy, its aerial collision mass stopping power can obtain by tabling look-up.Total mass stopping power is defined as: charged particle is in the medium of ρ in density, during through distance dl, lose the business that obtains divided by ρ dl of all energy dE.Total mass stopping power equals collision mass stopping power and radiation quality stopping power sum, namely
the item being wherein designated as down col represents collision mass stopping power, and under be designated as rad item represent radiation quality stopping power.Above-mentioned collision mass stopping power
the utilance η of electron ray excludes after electron ray leaks and penetrated by this small opening and make portions of electronics ray be blocked the impact of absorption by this baffle, and this electron ray source generation device exports the efficiency value of electron ray.
Preferably, the strong I of the output stream of this electron ray generator
b<5mA.
Preferably, the distance of this small opening and this exit facet is not more than 5cm.
Preferably, the subtended angle of this small opening to this shadow surface is not more than 60 °.Because excessive subtended angle arranges and may make excessive to the difference of this shadow surface distance everywhere from this small opening, the irradiation intensity causing this electron ray to be irradiated on this shadow surface is everywhere uneven.Namely the scanning angle that this electron ray is maximum is 30 °.
Preferably, the Atom of Elements of this baffle material therefor is less than or equal to 18, and during to ensure that baffle material bombards by this electron ray, its X ray emissivity is in very low level.The material that atomic number is less than or equal to 18 i.e. low atomic number material in general sense, the radiation loss of high energy electron in low atomic number material is very little, this baffle can not be made to form an x-ray source of can not ignore, so that interfere with the irradiation of this electron ray.
Preferably, the thickness of this baffle is greater than the critical penetration degree of depth of electron ray in this baffle material therefor that this electron ray generator exports.
Preferably, this sweep mechanism is at least one scanning magnet coil.
Another technical scheme of the present invention is: a kind of method of the generation low dose rate electron ray utilizing above-mentioned electron ray source generation device to realize, and the method comprises the following steps:
S
1, this exit facet sends this electron ray;
S
2, this baffle block absorb this electron ray, this leakage perforation leak penetrates part this electron ray;
S
3, this sweep mechanism scans in air leaking from this small opening the electron ray penetrated, make this electron ray after overscanning can Uniform Irradiation on this shadow surface.
Preferably, the distance of this small opening and this exit facet is not more than 5cm.
Preferably, the subtended angle of this small opening to this shadow surface is not more than 60 °.
Preferably, the strong I of the output stream of this electron ray generator
baccording to formula
Determine, wherein S (E) for energy be the aerial collision mass stopping power of electronics of E,
for the corresponding Dose Rate of this shadow surface, S
cfor the area of this small opening, S
efor the area of this exit facet, S
afor the area of this shadow surface, e is the electricity of Single Electron, and η is the utilance of this electron ray.The corresponding Dose Rate reached on this shadow surface as required
, select the strong I of suitable output stream
b.
Positive progressive effect of the present invention is: by this electron ray source generation device of the present invention and method, the bottleneck that existing electron ray source generation device cannot export the electron ray compared with low dose rate can be broken, the electron ray of low dose rate can be exported comparatively easily, structure is simple, with low cost simultaneously, and accurately can control the dose rate of electron ray as required.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the electron ray source generation device of a preferred embodiment of the present invention.
Embodiment
A preferred embodiment of the present invention is provided, to describe technical scheme of the present invention in detail below in conjunction with accompanying drawing.
Shown in figure 1, this electron ray source generation device of the present embodiment comprises one for exporting the electron ray generator 1 of an electron ray, this electron ray sends from an exit facet 2 of this electron ray generator 1, the transmission path of this electron ray is provided with a baffle 3 and one scan mechanism 5 successively, this baffle 3 blocks this electron ray and has one for leaking the small opening 4 penetrating this electron ray of part, this sweep mechanism 5 scans leaking from this small opening 4 this electron ray penetrated in atmosphere, enable on this electron ray Uniform Irradiation to shadow surface 6 after overscanning.
The present invention without particular/special requirement, adopts general electron ray generator to the performance parameter of this electron ray generator 1.The electron ray dose rate that this electron ray generator 1 exports is higher, what utilize the present invention to arrange has this baffle 3 of this small opening 4 and the booster action of other assemblies, can realize the effect making the dose rate of this electron ray of final irradiation on this shadow surface 6 lower.This exit facet 2 refers in this electron ray generator 1 face that electron ray outgoing occurs, the transmission direction of this electron ray that this exit facet 2 sends perpendicular to this exit facet 2 center.Be only schematically provide this electron ray transfers to this baffle 3 path from this exit facet 2 in Fig. 1, the dotted line on baffle 3 schematically provides center line when electron ray arrives this baffle 3.
In Fig. 1, this shadow surface 6 is rectangle is only that one illustrates, in Fig. 1, also schematic illustrating from this electron ray this electron ray after sweep mechanism 5 scans of this small opening 4 leakage injection with four dotted lines above this shadow surface 6 transfers to the path domain of this shadow surface 6 simultaneously.Those skilled in the art are to be understood that, the shape of shadow surface 6 is in fact first by needing the region of irradiation to determine, then suitable sweep mechanism 5 is set according to the shape of shadow surface 6, size, the arranging of this sweep mechanism 5 finally determine to scan after this electron ray transfer to the path domain of this shadow surface 6.Based on existing electromagnetic principles, utilize sweep mechanism to scan electron ray, make the electron ray after scanning Uniform Irradiation to be routine techniques means of the prior art on a shadow surface, the present invention does not specifically limit the kind of this sweep mechanism.Conveniently arrange can adopt at least one scan magnet coil as this sweep mechanism 5.
In the present invention, the prerequisite function of this baffle 3 blocks this electron ray, makes all cannot pass this baffle 3 except small opening 4 leaks this electron ray penetrating part, and this point only needs that the thickness of this baffle 3 is thicker can be realized.Because based on high-energy physics principle, when the thickness of this baffle 3 is greater than the critical penetration degree of depth in the material that this baffle 3 is used of electron ray that this electron ray generator 1 exports, this electron ray cannot penetrate this baffle 3.
But this electron ray will produce a certain amount of X ray after clashing into this baffle 3, if the amount of X ray is larger, namely this electron ray of penetrating is leaked by this small opening 4 by outgoing together with the X ray that sends with this baffle 3, interference is produced, because X-ray irradiation must be got rid of in some cases by the application of irradiation.In order to avoid such situation, the material of this baffle 3 can adopt atomic number to be less than or equal to the material of the element of 18, namely adopts low atomic number material to produce the X ray of can not ignore while avoiding this baffle 3 to block this electron ray of absorption.
In order to make the dose rate of this electron ray being finally irradiated to this shadow surface 6 suit the requirements, suitable small opening area should be designed.The area S of this small opening 4
ccan be determined by following formula:
Wherein S (E) for energy be the aerial collision mass stopping power of electronics of E,
for the corresponding Dose Rate of this shadow surface 6, I
bfor the output stream of this electron ray generator 1 is strong, S
efor the area of this exit facet 2, S
afor the area of this shadow surface 6, e is the electricity of Single Electron, and η is the utilance of electron ray.Those skilled in the art be to be understood that S (E) in above-mentioned formula,
e is the confirmable physical quantity of numerical value.Wherein S (E) is the aerial collision mass stopping power of electronics.The utilance η of electron ray excludes after electron ray leaks and penetrated by this small opening 4 and make portions of electronics ray be blocked the impact of absorption by this baffle 3, and this electron ray source generation device exports the efficiency value of this electron ray.This that is
namely be the efficiency value that this electron ray source generation device exports this electron ray.
In a preferred embodiment, the strong I of the output stream of this electron ray generator 1
b<5mA, to ensure that the working temperature of this baffle can not be too high, so that exceeds the temperature capacity of this baffle.This small opening 4 can be arranged on the distance of this exit facet 2 and be not more than in the scope of 5cm, and that avoids too much air scattering to cause this electron ray to exceed baffle 3 blocks scope.Generally the subtended angle of this small opening 4 to this shadow surface 6 is not more than 60 °.Because excessive subtended angle arranges and may make excessive to the difference of this shadow surface 6 distance everywhere from this small opening 4, the irradiation intensity causing this electron ray to be irradiated on this shadow surface 6 is everywhere uneven.
Below by the basis of this electron ray source generation device shown in Fig. 1, detailed citing is carried out to the method for this generation low dose rate electron ray of the present invention and describes.The method step of this generation low dose rate electron ray of the present embodiment is as follows:
First this exit facet 2 sends this electron ray;
Then, when this electron ray arrives this baffle 3, this baffle 3 blocks and absorbs this electron ray, and this leakage perforation leaks this electron ray penetrating part;
This sweep mechanism 5 scans in air leaking from this small opening 4 this electron ray penetrated, finally make this electron ray after overscanning can Uniform Irradiation on this shadow surface 6.
Before the method for this generation low dose rate electron ray of application, need first to set this electron ray source generation device, determine that the distance of this small opening 4 and this exit facet 2 and this small opening 4 are to the subtended angle of this shadow surface 6.In order to avoid scattering, this small opening 4 is not more than 5cm with the distance of this exit facet 2.In order to the dose rate made as far as possible to be radiated on this shadow surface 6 is everywhere relatively average, the subtended angle of this small opening 4 to this shadow surface 6 is not more than 60 °.
At beginning electron ray predose, the strong I of output stream of this electron ray generator 1
bcan determine according to following formula:
Wherein S (E) for energy be the aerial collision mass stopping power of electronics of E,
for the corresponding Dose Rate of this shadow surface 6, S
cfor the area of this small opening 4, S
efor the area of this exit facet 2, S
afor the area of this shadow surface 6, e is the electricity of Single Electron, and η is the utilance of electron ray.In this formula, S (E), e are constant, the area S of this small opening 4
c, this exit facet 2 area S
e, this shadow surface 6 area S
a, electron ray the numerical value of utilance η all for being determined by this electron ray source generation device, the corresponding Dose Rate reached on this shadow surface 6 as required
the strong I of corresponding output stream can be calculated
b, the output stream arranging this electron ray generator 1 is by force I
b, just can obtain the corresponding Dose Rate needed
Although the foregoing describe the specific embodiment of the present invention, it will be understood by those of skill in the art that these only illustrate, protection scope of the present invention is defined by the appended claims.Those skilled in the art, under the prerequisite not deviating from principle of the present invention and essence, can make various changes or modifications to these execution modes, but these change and amendment all falls into protection scope of the present invention.
Claims (10)
1. an electron ray source generation device, for irradiation one shadow surface, comprise one for exporting the electron ray generator of an electron ray, this electron ray sends from an exit facet of this electron ray generator, it is characterized in that, the transmission path of this electron ray is provided with successively:
One baffle, for blocking this electron ray, this baffle has one for leaking the small opening penetrating this electron ray of part;
One scan mechanism, this sweep mechanism is used for scanning in air leaking from this small opening this electron ray penetrated, and enables this electron ray Uniform Irradiation after overscanning on this shadow surface,
The area S of this small opening
cmeet formula:
Wherein S (E) for energy be the aerial collision mass stopping power of electronics of E,
for the Dose Rate needed for this shadow surface, I
bfor the output stream of this electron ray generator is strong, S
efor the area of this exit facet, S
afor the area of this shadow surface, e is the electricity of Single Electron, and η is the utilance of this electron ray.
2. electron ray source generation device as claimed in claim 1, is characterized in that, the strong I of output stream of this electron ray generator
b<5mA.
3. electron ray source generation device as claimed in claim 1, it is characterized in that, the distance of this small opening and this exit facet is not more than 5cm.
4. electron ray source generation device as claimed in claim 1, it is characterized in that, the subtended angle of this small opening to this shadow surface is not more than 60 °.
5. electron ray source generation device as claimed in claim 1, it is characterized in that, the Atom of Elements of this baffle material therefor is less than or equal to 18.
6. electron ray source generation device as claimed in claim 5, is characterized in that, the thickness of this baffle is greater than the critical penetration degree of depth of electron ray in this baffle material therefor of this electron ray generator output.
7. electron ray source generation device as claimed in claim 1, it is characterized in that, this sweep mechanism is at least one scanning magnet coil.
8. utilize a method for the generation low dose rate electron ray of electron ray source generation device as claimed in claim 1, the method comprises the following steps:
S
1, this exit facet sends this electron ray;
S
2, this baffle block absorb this electron ray, this small opening leak penetrates part this electron ray;
S
3, this sweep mechanism scans in air leaking from this small opening this electron ray penetrated, make this electron ray after overscanning can Uniform Irradiation on this shadow surface,
The strong I of output stream of this electron ray generator
baccording to formula
Determine, wherein S (E) for energy be the aerial collision mass stopping power of electronics of E,
for the corresponding Dose Rate of this shadow surface, S
cfor the area of this small opening, S
efor the area of this exit facet, S
afor the area of this shadow surface, e is the electricity of Single Electron, and η is the utilance of this electron ray.
9. the method producing low dose rate electron ray as claimed in claim 8, it is characterized in that, the distance of this small opening and this exit facet is not more than 5cm.
10. the method producing low dose rate electron ray as claimed in claim 8, it is characterized in that, the subtended angle of this small opening to this shadow surface is not more than 60 °.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6097790A (en) * | 1997-02-26 | 2000-08-01 | Canon Kabushiki Kaisha | Pressure partition for X-ray exposure apparatus |
| CN101401168A (en) * | 2006-03-10 | 2009-04-01 | 浜松光子学株式会社 | Electron beam generating apparatus |
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| JP2004354309A (en) * | 2003-05-30 | 2004-12-16 | Mitsubishi Heavy Ind Ltd | Energy line extraction window, energy line projection device and energy line extraction method |
| US7888640B2 (en) * | 2007-06-18 | 2011-02-15 | Hitachi High-Technologies Corporation | Scanning electron microscope and method of imaging an object by using the scanning electron microscope |
| SE534156C2 (en) * | 2009-03-11 | 2011-05-17 | Tetra Laval Holdings & Finance | Method for mounting a window for outgoing electrons and a window unit for outgoing electrons |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6097790A (en) * | 1997-02-26 | 2000-08-01 | Canon Kabushiki Kaisha | Pressure partition for X-ray exposure apparatus |
| CN101401168A (en) * | 2006-03-10 | 2009-04-01 | 浜松光子学株式会社 | Electron beam generating apparatus |
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