CN102874736A - Transverse comb tooth type micro-electromechanical vibration energy collector - Google Patents

Transverse comb tooth type micro-electromechanical vibration energy collector Download PDF

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Publication number
CN102874736A
CN102874736A CN2011101978836A CN201110197883A CN102874736A CN 102874736 A CN102874736 A CN 102874736A CN 2011101978836 A CN2011101978836 A CN 2011101978836A CN 201110197883 A CN201110197883 A CN 201110197883A CN 102874736 A CN102874736 A CN 102874736A
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energy collector
vibration energy
mass
micromechanics
interdigitated electrode
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欧毅
陈大鹏
叶甜春
刘宇
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

The invention provides a transverse comb tooth type micro-electromechanical vibration energy collector which comprises a mass block (100), an external frame (200), comb tooth structures (101 and 205), inflexion beams (201, 202, 203 and 204) and vibration limiters (301 and 302). The transverse comb tooth type micro-electromechanical vibration energy collector is characterized in that the mass block (100) is connected onto the external frame (200) through the inflexion beams (201, 202, 203 and 204). The transverse comb tooth type micro-electromechanical vibration energy collector can effectively collect external vibration sources and convert the external vibration sources into electric energy, is long in service life and small in space volume, and can be processed in batch by an ordinary microelectronic process, so that the manufacturing cost is low and the conversion efficiency is high.

Description

Horizontal interdigitated electrode structure micromechanics vibration energy collector
Technical field
The present invention relates to a kind of MEMS (MEMS), particularly relate to a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector, be mainly used in Conversion of Energy and the supply of mini system.
Background technology
Usually particularly in the MEMS assembly, need dynamical system that the power of assembly running is provided at numerous mechano-electronic assemblies.But, because these device sizes are less, integrated level is higher, the perhaps restriction of package casing space compactness, these external impetus systems of battery or combustion powered system are difficult to use in these MEMS application, and change and safeguard the complicated difficulty of dynamical system.Therefore in addition, battery can't increase substantially because its volume is limited, needs frequent, and battery uses problems such as also there being the leakage of shell burn into electrolyte inside after a period of time, also should not be underestimated for the pollution of environment.
For these MEMS assemblies provide power two kinds of thinkings are arranged substantially, one is based on radio frequency (RF) delivery of electrical energy, and one is based on the mechanical energy gathering system.Although the RF electric energy transmission technology is electric energy transmitting and making things convenient for directly, manufacturing process is complicated, and transmission range, conversion efficiency, placement-and-routing are limited more.
Vibration is a kind of phenomenon of extensive existence, particularly at automobile, aircraft, bridge, or in the multiple occasion such as big machinery, for example household microwave oven vibrations peak value and vibration frequency be 2.25m/s2 and 121Hz.In addition, the biological phenomenas such as the limb motion of human body, blood flow also can produce vibration.Special dimension based on the MEMS application, particularly most of MEMS sensor is used for these mechanical movements of sensing, these MEMS assemblies can accumulate mechanical energy when moving with device to be measured, these mechanical vibrational energies are reclaimed to be used for the driving MEMS assembly more and more receive publicity.
Current a kind of novel mechanical vibrational energy retracting device for example is horizontal interdigitated electrode structure micromechanics vibration energy collector, effect is exactly the vibroseis by the coupling external environment, the mechanical energy that shakes is converted into electric energy offers the devices such as follow-up sensor, actuator.Be mainly used in device volume less, be difficult for changing the situations such as power supply.Owing to utilizing the vibrational energy that is prevalent in nature and the industrial quarters to design vibrational energy collector.Therefore it is with a wide range of applications.
The concrete advantage following points of horizontal interdigitated electrode structure micromechanics vibration energy collector: at first, with respect to other batteries, the life-span of use is unlimited in theory, and stable voltage is provided, and has guaranteed the permanence and stability of device normal operation.Secondly can realize wireless network: can greatly reduce network connection, and the inconvenience that brings of wiring, reduce cost, good portable performance; The information between the network node that can realize transmits and processes; This kind MEMS can be used for some interior of articles, be difficult to install and change the place of battery such as bridge inside, building wall inside, highway etc., can record by the method for exciting needed data, guarantee security performance; Can realize engine, gearbox and so on are existed the Real Time Monitoring of the device of vibration; Can realize permanent tracking performance, such as the signal ruuning situation of vehicle, aircraft; Can realize energy acquisition, processing and a series of functions of feedback execution, not need the processing by other devices, be conducive to realize automation.
Yet how the structure of this mechanical vibrational energy retracting device of appropriate design can also be raised the efficiency its miniaturization, high integration simultaneously, becomes the technical problem that industry needs to be resolved hurrily.
Summary of the invention
In view of this, main purpose of the present invention is to propose a kind of novel horizontal interdigitated electrode structure micromechanics vibration energy collector, and can collect and transform the exterior vibration source is electric energy, have that the life-span is long, volume is little, adopt microelectronic technique can batch machining etc. advantage.
For this reason, the invention provides a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector, comprise mass (100), outside framework (200), comb structure (101,205), inflection beam (201,202,203,204), vibrations stop (301,302), it is characterized in that: inflection beam (201,202,203,204) is connected to mass (100) on the outside framework (200).
Mass (100) back and forth shakes along directions X under the effect of extraneous vibroseis, and its peak swing is limited by stop (301,302).
Has the first projection (101) on the mass (100), has the second projection (205) on the outside framework (200), the first projection (101) consists of variable capacitance with the comb structure that the second projection (205) forms, in the process of mass (100) vibrations, the size of electric capacity changes.
Has silicon nitride layer at comb structure (101,205).Silicon nitride layer thickness is 50 nanometers.
The present invention also provides a kind of method of making horizontal interdigitated electrode structure micromechanics vibration energy collector, and comprising: substrate is provided, and substrate comprises bottom, intermediate layer and top layer; The etching top layer until expose the intermediate layer, forms mass, outside framework, comb structure, inflection beam and vibrations stop; The intermediate layer that removal exposes is so that mass, comb structure, inflection beam and vibrations stop are unsettled; Form electrode.
Wherein, substrate is SOI, and top layer thickness is 200 microns, and intermediate layer thickness is 500 microns.
Wherein, also on comb structure CVD deposit the silicon nitride of 50 nanometer thickness.
Wherein, adopt the hydrofluoric acid wet method to remove the intermediate layer.
Wherein, electron beam evaporation plating 2000 Thick aluminium film is to form electrode.
According to horizontal interdigitated electrode structure micromechanics vibration energy collector of the present invention, can efficiently collect and transform the exterior vibration source is electric energy, long service life, and spatial volume is little, adopts the conventional microelectronic technique can batch machining, so low cost of manufacture, transformation efficiency are high.
Purpose of the present invention, and in these other unlisted purposes, in the scope of the application's independent claims, satisfied.Embodiments of the invention are limited in the independent claims, and specific features is limited in its dependent claims.
Description of drawings
Describe technical scheme of the present invention in detail referring to accompanying drawing, wherein:
Fig. 1 is according to micromechanics vibration energy collector structure top view of the present invention;
Fig. 2 is micromechanics vibration energy collector equivalent circuit; And
Fig. 3 A to Fig. 3 D is the cutaway view according to each step of micromechanics vibration energy collector manufacturing process of the present invention.
The specific embodiment
Also describe feature and the technique effect thereof of technical solution of the present invention referring to accompanying drawing in conjunction with schematic embodiment in detail, disclose a kind of novel horizontal interdigitated electrode structure micromechanics vibration energy collector.It is pointed out that structure like the similar Reference numeral representation class, used term " first " among the application, " second ", " on ", D score etc. can be used for modifying various device architectures or processing step.These are modified is not space, order or the hierarchical relationship of hint institute's modification device architecture or processing step unless stated otherwise.
The implementation structure of the technology of the present invention solution as shown in Figure 1, a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector is mainly by mass 100, outside framework 200, two forms (four) inflection beam 201,202,203,204, two vibrations stops 301,302 totally.Mass is connected with outside framework by four inflection beams, back and forth shakes along directions X under the effect of extraneous vibroseis, and its peak swing is limited by stop (301,302).Simultaneously, be distributed with comb structure on mass and the outside framework, particularly, be formed with a plurality of the first projections 101 that are parallel to each other along diagram y direction on the mass 100, also be formed with in the y-direction a plurality of the second projections 205 that are parallel to each other on the outside framework 200, the a plurality of variable capacitances of interlaced formation between 101 and 205, in the process of mass (100) vibrations, the size of electric capacity changes.Two stops are used for the excessive excursion vibrations of restriction mass.
Laterally interdigitated electrode structure micromechanics vibration energy collector can be converted into equivalent circuit as shown in Figure 2, comprises variable capacitance Cx, device parasitic capacitance Cp, the storage capacitor Cs of collector, two equivalent diode D1/D2 and initial input power supply Vin.
Vin is the initial input power supply of horizontal interdigitated electrode structure micromechanics vibration energy collector among Fig. 2, and Cx is the variable capacitance of collector, and its capacitance is determined by the spacing between the broach (101,205).Distance is less, and electric capacity is larger, and distance is larger, and electric capacity is less.Cp represents the parasitic capacitance in the device.Cs is storage capacitor, be used for to store collector from electric energy that external shock gathered and transformed.When shaking under the effect of mass (100) in extraneous vibroseis, the capacitance of collector variable capacitance changes between Cmax and Cmin.After collector is started working, through the electric energy of first cycle on memory capacitance Cs be:
V s , 1 = C max + Cp C min + Cp + Cs V in - - - ( 1 )
Behind the second period:
V s , 2 = C max + Cp C min + Cp + Cs V in + Cs C min + Cp + Cs V s , 1 - - - ( 2 )
N all after date:
V s , n = C max + Cp C min + Cp + Cs V in + Cs C min + Cp + Cs V s , n - 1 - - - ( 3 )
Final storage of electrical energy
V s , ∞ = V in C max + Cp C min + Cp - - - ( 4 )
From (4) formula as seen, the energy harvester storage of electrical energy is decided by input initial power and collector electric capacity, and collector electric capacity changes between Cmax and Cmin so that storage of electrical energy, also namely has the function that gathers the external shock energy and be converted into electric energy greater than initial power because of external shock.Can realize simultaneously the lifting of voltage, its lifting amplitude is determined by maximum, minimum of a value and the parasitic capacitance of variable capacitance.Therefore can come according to the required supply voltage that reaches the variable capacitance parameter of design energy collector.
Fig. 3 A to 3D is depicted as the cutaway view according to each step of micromechanics vibration energy collector manufacturing process of the present invention.
At first, as shown in Figure 3A, provide substrate 401.Substrate 401 is used for providing integral device to support, can be silicon-on-insulator (SOI), comprise the bottom 401A that can be thick silicon layer, the intermediate layer 401B that can be sacrifice layer and the top layer 401C that can be thin silicone layer, wherein the thickness of thin silicon top layer 401C can be 50 to 500 microns and for example is preferably 200 microns, and the thickness of sacrifice layer 401B can be 200 to 2000 microns and for example be preferably 500 microns.If sensor or tested device are based on other substrates, for example germanium on insulator (GOI) or III-V, II-VI compound semiconductor substrate, such as GaAs, INSb etc., energy harvester of the present invention also can the employing other materials substrate identical with sensor or tested device, so that integrated manufacturing, just need to be on substrate first deposited oxide layer and then deposited top layer so that the etching of carrying out after a while forms comb structure.
Secondly, shown in Fig. 3 B, the etching top layer.Adopt dark etching technique, for example adopt the fluorine-based plasma dry etching of carbon, top layer 401C is worn until expose sacrifice layer 401B quarter, formed the figure 402 of a plurality of comb structures by remaining top layer 401C, its domain or end face view shape are as shown in Figure 1, core is used for consisting of mass 100 and the first projection 101 after a while, and the marginal portion is used for consisting of outside framework 200, inflection beam 201~204, stop 301/302 and the second projection 205 after a while.
Then, shown in Fig. 3 C, remove sacrifice layer.Can adopt rare (for example 5%~10%) hydrofluoric acid solution to remove the sacrifice layer 401B that exposes, remaining structure 403 comprises complete thick silicon layer 401A, partial sacrifice layer 401B and part top silicon layer 401C.Because this wet etching is isotropism, the hole that therefore forms not only is positioned under the broach figure 402, also has the part lateral erosion, so that a plurality of broach figure 402 is partly or entirely unsettled, so that adjust mutual spacing with external vibration.Wherein, the top layer 401C that is positioned at edge forms housing 200, coupled part forms inflection beam 201~204, stop 301/302 and a plurality of the second projection 205, the top layer 401C that is positioned at the center forms mass 100 and the first projection 101, is fixedly connected by the inflection beam between mass 100 and the housing 200.
At last, shown in Fig. 3 D, form electrode.For example adopt electron beam evaporation technique, AM aluminum metallization film on structure 403 exposed surfaces (among the figure shown in the gray area), thickness is 2000
Figure BDA0000075915610000051
Be used to form electrode.In addition, also forming diaphragms in broach figure 402 deposition, is the silicon nitride of 50 nanometers by CVD technique deposition thickness on the first projection 101 and the second projection 205 for example, insulation protection to be provided and to increase electric capacity.So far device 404 machines.
According to horizontal interdigitated electrode structure micromechanics vibration energy collector of the present invention, can efficiently collect and transform the exterior vibration source is electric energy, long service life, and spatial volume is little, adopts the conventional microelectronic technique can batch machining, so low cost of manufacture, transformation efficiency are high.
Although with reference to one or more exemplary embodiments explanation the present invention, those skilled in the art can know and need not to break away from the scope of the invention and various suitable changes and equivalents are made in technological process.In addition, can be made by disclosed instruction and manyly may be suitable for the modification of particular condition or material and do not break away from the scope of the invention.Therefore, purpose of the present invention does not lie in to be limited to as being used for and realizes preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacture method thereof will comprise all embodiment that fall in the scope of the invention.

Claims (10)

1. horizontal interdigitated electrode structure micromechanics vibration energy collector, comprise mass (100), outside framework (200), comb structure (101,205), inflection beam (201,202,203,204), vibrations stop (301,302), it is characterized in that: inflection beam (201,202,203,204) is connected to mass (100) on the outside framework (200).
2. a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector according to claim 1, it is characterized in that: mass (100) back and forth shakes along directions X under the effect of extraneous vibroseis, and its peak swing is limited by stop (301,302).
3. a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector according to claim 1, it is characterized in that: have the first projection (101) on the mass (100), has the second projection (205) on the outside framework (200), the first projection (101) consists of variable capacitance with the comb structure that the second projection (205) forms, in the process of mass (100) vibrations, the size of electric capacity changes.
4. a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector according to claim 1 is characterized in that: have silicon nitride layer at comb structure (101,205).
5. a kind of horizontal interdigitated electrode structure micromechanics vibration energy collector according to claim 4, it is characterized in that: silicon nitride layer thickness is 50 nanometers.
6. method of making horizontal interdigitated electrode structure micromechanics vibration energy collector as claimed in claim 1 comprises:
Substrate is provided, and substrate comprises bottom, intermediate layer and top layer;
The etching top layer until expose the intermediate layer, forms mass, outside framework, comb structure, inflection beam and vibrations stop;
The intermediate layer that removal exposes is so that mass, comb structure, inflection beam and vibrations stop are unsettled;
Form electrode.
7. method as claimed in claim 6, wherein, substrate is SOI, and top layer thickness is 200 microns, and intermediate layer thickness is 500 microns.
8. method as claimed in claim 6, wherein, also CVD deposits the silicon nitride of 50 nanometer thickness on comb structure.
9. method as claimed in claim 6 wherein, adopts the hydrofluoric acid wet method to remove the intermediate layer.
10. method as claimed in claim 6, wherein, electron beam evaporation plating 2000
Figure FDA0000075915600000011
Thick aluminium film is to form electrode.
CN2011101978836A 2011-07-14 2011-07-14 Transverse comb tooth type micro-electromechanical vibration energy collector Pending CN102874736A (en)

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CN103475183B (en) * 2013-09-30 2015-10-28 安徽大学 Based on the manufacture method of the composite type miniature energy collector of MEMS technology

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