CN102867833B - Image device and imaging device - Google Patents
Image device and imaging device Download PDFInfo
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- CN102867833B CN102867833B CN201210216000.6A CN201210216000A CN102867833B CN 102867833 B CN102867833 B CN 102867833B CN 201210216000 A CN201210216000 A CN 201210216000A CN 102867833 B CN102867833 B CN 102867833B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 69
- 229910052782 aluminium Inorganic materials 0.000 claims description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 40
- 229910000831 Steel Inorganic materials 0.000 claims description 38
- 239000010959 steel Substances 0.000 claims description 38
- 238000009792 diffusion process Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 7
- 239000007943 implant Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 39
- 238000006243 chemical reaction Methods 0.000 description 22
- 230000008859 change Effects 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 230000000903 blocking effect Effects 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/62—Control of parameters via user interfaces
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Abstract
The invention discloses image device and imaging device.Described image device includes that at least one special pixel, the layout of the structure of described special pixel are made into the layout of the structure being different from other each pixels in addition to described special pixel.Described special pixel is the pixel that imaging characteristic is stably different from the imaging characteristic of other each pixels described.Placement differences between structure and the structure of other each pixels described of described special pixel is used to the inhomogeneities of the described imaging characteristic suppressing described special pixel to be presented.The image device of the present invention and imaging device can suppress the inhomogeneities of imaging characteristic.
Description
The cross reference of correlation technique
The theme that the present invention is comprised is relevant to the theme disclosed by Japanese Priority Patent Application case JP2011-147932 submitted to Japan Office on July 4th, 2011, and therefore the full content by this Japanese Priority Patent Application case is incorporated herein by reference.
Technical field
By and large, the present invention relates to image device and imaging device.More particularly it relates to the image device of the local inhomogeneities of the imaging characteristic of self can be suppressed and have employed the imaging device of this image device.
Background technology
In recent years, the improvement of semiconductor fabrication allows to make progress in terms of semiconductor device miniaturization, and allows the size of semiconductor device chip to increase.Additionally, also increase the size of masking circuit (maskedcircuit).Such as, the number of pixels that the image device being enclosed in a chip is comprised adds.The representative instance of this kind of image device is CMOS(complementary metal oxide semiconductors (CMOS)) imageing sensor.
In the cmos image sensor with big chip size, such as in the situation of the sensor of 35mm size, owing to the restriction of device is so whole chip single exposure cannot be made.If some atomic little devices should be formed in device forming process on the whole big region of cmos image sensor, then it is contemplated that divide the area into many sub regions, the plurality of subregion each can once form above-mentioned device.Then, be bonded with each other the above-mentioned big region to form cmos image sensor by these subregions.This method for forming the cmos image sensor that this kind has big region is referred to as region segmentation joining method.Such as, Japanese Laid Open Patent the 2005-223707th proposes and uses one to be referred to as the technology of dividing exposure (divisionexposure) means to form big solid imaging device.
But, if as it has been described above, use dividing exposure means, then adjustment displacement (adjustmentshift) exposing marginal right part is different from exposing the adjustment displacement of marginal left part.Therefore, the characteristic exposing marginal right part is also different from exposing the characteristic of marginal left part.If this property difference is gradual change, then will not cause big problem.But, if exposure-processed and right side exposure-processed on the left of Zhi Hanging, then this boundary arises that on straight line, thus causes significant property difference.Therefore, the obvious property difference between right part and the left part of both sides, demarcation line will be observed significantly.
Such as, in the situation of solid imaging device, this demarcation line comes across on straight line, thus causes obvious property difference.In this case, the output difference between right part and the left part of both sides, demarcation line will act as bright line or concealed wire and identified significantly, so that boundary becomes eye-catching.
For solving the problems referred to above, once invented method disclosed in the documents such as such as Japanese Laid Open Patent the 2010-141093rd.According to this kind of method, the device portions concurrently formed with special process is mixed with the device portions concurrently formed with another technique.In above-mentioned special process, it is that specific subregion is performed exposure-processed and ion implanting, and in another technique above-mentioned, is then that another subregion is performed exposure-processed and ion implanting.
Summary of the invention
However, it is also desirable to other solutions in addition to method disclosed in Japanese Laid Open Patent the 2010-141093rd.
The present invention is contemplated to solve the problems referred to above and is made with the local inhomogeneities of suppression imaging characteristic.
According to one embodiment of present invention, it is provided that a kind of image device, described image device includes that at least one special pixel, the layout of the structure of described special pixel are made into the layout of the structure being different from other each pixels in addition to described special pixel.
Described special pixel is the pixel that imaging characteristic is stably different from the imaging characteristic of other each pixels described, and the placement differences between the structure of the structure of described special pixel and other each pixels described can be used to the inhomogeneities of the described imaging characteristic suppressing described special pixel to be presented.
Described special pixel can be in the pixel near the joint between mask.
Described special pixel can be to include AL(aluminum) pixel of line, the shape of described AL line is made into the shape of the AL line being different from other each pixels described.
Described special pixel can be the pixel that its included described AL line is made into the AL line being coarser than other each pixels described.
Described special pixel can be the pixel that its included described AL line is made into the AL line being narrower than other each pixels described.
Described AL line can be floating diffusion (floatingdiffusion；FD) line in portion.
Described special pixel can be the pixel that its included described AL line is arranged on the position different from the position of the AL line of other each pixels described.
Described special pixel can be the pixel of aluminum steel including being mutually adjacently, and the gap between the wherein said AL line being mutually adjacently is made into the gap of the AL line less than other each pixels described.
Described special pixel can be the pixel of aluminum steel including being mutually adjacently, and the gap between the wherein said AL line being mutually adjacently is made into the gap of the AL line more than other each pixels described.
Described AL line can be line and the earth lead of floating diffusion portion.
Described special pixel can be the pixel including reading door (readgate), and the size of described reading door is made into the size reading door being different from other each pixels described.
Described special pixel can be the pixel that the size of its included described reading door is made into the size reading door more than other each pixels described.
Described special pixel can be the pixel that the size of its included described reading door is made into the size reading door less than other each pixels described.
Described special pixel can be the pixel that its floating diffusion portion formation implantation pattern being had is made into the floating diffusion portion formation implantation pattern being different from other each pixels described.
Described special pixel can be the pixel that the size of its opening being had is made into the size of the opening being different from other each pixels described.
Described special pixel can be the pixel that the size of its described opening being had is made into the size of the opening less than other each pixels described.
Described special pixel can be the pixel that the size of its described opening being had is made into the size of the opening more than other each pixels described.
According to another embodiment of the present invention, provide a kind of imaging device including image device, described image device includes that special pixel, the layout of the structure of described special pixel are made into the layout of the structure being different from other each pixels in addition to described special pixel.
According to one more embodiment of the present invention, being provided with at least one special pixel, the layout of the structure of described special pixel is made into the layout of the structure being different from other each pixels in addition to described special pixel.
According to still another embodiment of the invention, it is provided that a kind of image device, described image device is provided with at least one special pixel, and the layout of the structure of described special pixel is made into the layout of the structure being different from other each pixels in addition to described special pixel.
In accordance with the invention it is possible to information is processed.Specifically, it is possible to the inhomogeneities of suppression imaging characteristic.
Accompanying drawing explanation
Fig. 1 is showing and constitutes CMOS(complementary metal oxide semiconductors (CMOS)) block diagram of typical structure of the primary clustering of imageing sensor；
Fig. 2 shows the typical mask pattern of some pixel in cmos image sensor；
Fig. 3 is showing the explanatory diagram of the local inhomogeneities of imaging characteristic；
Fig. 4 A and Fig. 4 B is the explanatory diagram of the local inhomogeneities respectively illustrating imaging characteristic；
Fig. 5 shows other typical mask patterns of some pixel in cmos image sensor；
Fig. 6 is showing the explanatory diagram of imaging characteristic；
Fig. 7 shows other typical mask patterns of some pixel in cmos image sensor；
Fig. 8 shows other typical mask patterns of some pixel in cmos image sensor；
Fig. 9 shows other typical mask patterns of some pixel in cmos image sensor；
Figure 10 shows the typical model of the capacitor between each line and each transistor being present in cmos image sensor；
Figure 11 shows other typical mask patterns of some pixel in cmos image sensor；
Figure 12 shows other typical mask patterns of some pixel in cmos image sensor；
Figure 13 shows typical light blocking layer and typical opening；
Figure 14 shows other typical light blocking layers and other typical openings；
Figure 15 A to Figure 15 C is the explanatory diagram of the position of the inhomogeneities respectively illustrating imaging characteristic；And
Figure 16 is showing the block diagram of the typical structure of the primary clustering constituting imaging device.
Detailed description of the invention
Various embodiments of the present invention will be explained below.It should be noted that explaination is divided into two themes arranged in the following order.
1, first embodiment (image device)
2, the second embodiment (imaging device)
1, first embodiment (image device)
The inhomogeneities of imaging characteristic
First, by the inhomogeneities of explaination imaging characteristic.
Fig. 1 is showing typical CMOS(complementary metal oxide semiconductors (CMOS)) explanatory diagram of imageing sensor 10.The solid imaging device that cmos image sensor 10 shown in Fig. 1 is made up of CMOS.Cmos image sensor 10 includes multiple pixel, and the plurality of pixel each includes photodiode respectively, and for the light being incident to this photodiode is converted into signal charge, described signal charge is exaggerated the most within the pixel and propagates.
Cmos image sensor 10 shown in Fig. 1 is the sensor with big chip size (such as 35mm).During making cmos image sensor 10, owing to the restriction of device is so whole chip single exposure cannot be made.Therefore, chip is made to expose with separate exposure process according to twice.Such as, during first, by using left mask 11 to make the regional exposure in left side, and during second, then by using right mask 12 to make the regional exposure on right side.
In the situation of the technology in past, left mask 11 has identical mask pattern with right mask 12.In other words, for the whole valid pixels employed in cmos image sensor 10, the pattern of transistor, wiring and other assemblies is consistent.Fig. 2 shows the typical mask pattern of some wiring layer of some pixel near the joint between the left mask 11 provided for cmos image sensor 10 and right mask 12.The region 13 being shown as in Fig. 1 near joint between left mask 11 and right mask 12.In fig. 2, it is shown that represent the vertical dotted line of joint between left mask 11 and right mask 12, this vertical dotted line is sandwiched between the mask pattern of the mask pattern of the left mask 11 in left side and the right mask 12 on right side.As in figure 2 it is shown, the pixel in region 13 near this joint is exposed also by the mask pattern using left mask 11 and right mask 12 to be shared.
In fig. 2, holding wire 21-1, FD(floating diffusion) line 22-1, earth lead 23-1 and vdd line 24-1 constitute the routing masks pattern of left mask 11, and holding wire 21-2, FD line 22-2, earth lead 23-2 and vdd line 24-2 then constitute the routing masks pattern of right mask 12.It should be noted that in the following description, without being distinguished from each other with holding wire 21-2 by holding wire 21-1 when, then holding wire 21-1 and holding wire 21-2 each is also called holding wire 21 for short.Similarly, without being distinguished from each other by FD line 22-1 and FD line 22-2 when, then FD line 22-1 and FD line 22-2 each are also called FD line 22 for short.Similarly, without being distinguished from each other with earth lead 23-2 by earth lead 23-1 when, then earth lead 23-1 and earth lead 23-2 each is also called earth lead 23 for short.Similarly, without being distinguished from each other with vdd line 24-2 by vdd line 24-1 when, then vdd line 24-1 and vdd line 24-2 each is also called vdd line 24 for short.
As it has been described above, in the situation of the technology in past, generally the mask pattern that whole pixels share is applied to the assembly of the valid pixel employed in image device (such as cmos image sensor 10).However, it is difficult to make the imaging characteristic of whole pixel completely the same.In other words, in some cases, the local of imaging characteristic and stable inhomogeneities may be produced.In the situation of the structure performing separate exposure process wherein, particularly in the situation of cmos image sensor 10, easily the pixel in the region 13 near the joint between left mask 11 and right mask 12 produces this kind of inhomogeneities.
Chart shown in Fig. 3 is the comparison along the imaging characteristic between each pixel column being longitudinally spaced apart.In chart shown in Fig. 3, compare the level of each signal exported respectively by the one of the pixel column near joint between left mask and right mask.These signals are typically exported in response to predetermined uniform incident illumination by the one of pixel column respectively, or are exported when without incident illumination by the one of pixel column respectively.Such as, the pixel column during these pixel columns are region 13.
In the situation of the chart shown in Fig. 3, the output of the specific pixel row being between left mask 11 side and left mask and right mask in joint is stably higher than the output of other each pixel columns.In other words, in this pixel column, create the stable inhomogeneities of imaging characteristic partly.
Worrying, cmos image sensor 10 image quality exported can deteriorate because creating the stable inhomogeneities of imaging characteristic in this pixel of cmos image sensor 10 partly.
Brightness line on output image
Fig. 4 A and Fig. 4 B is showing the figure of the typical image produced by cmos image sensor 10.Image 31 shown in Fig. 4 A is the picture black (blackimage) obtained by cmos image sensor 10.Picture black is typically from being placed in the image exported without the pixel incident illumination state.Image 32 shown in Fig. 4 B is the enlarged drawing picture in a region on the image 31 shown in Fig. 4 A.In Figure 4 A, this region is shown as rectangular area.
As shown in fig. 4 a and fig. 4b, on image 31 and image 32, between the region being exposed in light by left mask 11 and the region being exposed in light by right mask 12, the position of joint generates the line of pixel column.The line of this kind of pixel column is the most also known as brightness line.In other words, above by reference to as described in the chart shown in Fig. 3, between left mask 11 side and left mask and right mask, the output of specific pixel row in joint is stable high output, and this stable high output occurs as brightness line on the image 31 shown in Fig. 4 A and Fig. 4 B and image 32.In other words, the quality of output image deteriorates due to the local inhomogeneities of the imaging characteristic of some pixel.
Therefore, the camera apparatus that have employed cmos image sensor needs to be corrected, to suppress the quality deterioration of this kind of output image.Therefore, worrying, the manufacturing cost of camera apparatus can increase.
The local of mask pattern changes
In order to suppress this kind of local in the imaging characteristic of pixel and stable inhomogeneities, and therefore to the image quality deterioration that caused by inhomogeneities of suppression, by originally should be consistent for whole pixels mask pattern change partly.In other words, during manufacturing cmos image sensor, by using the mask pattern wherein provided for some pixel to be different from the mask of the mask pattern provided for other pixels, perform exposure-processed.In other words, in order to suppress this kind of local in the imaging characteristic of pixel and stable inhomogeneities, i.e., in order to suppress the image quality deterioration caused by inhomogeneities, the layout of the structure of each in some pixel in cmos image sensor is made into the layout of the structure of each being different from other pixels.It should be noted that the structure of pixel is the structure of all layers forming this pixel.The structure of pixel generally includes and forms each wiring of this pixel and each transistor.
Herein below will explain the situation as the cmos image sensor 10 shown in Fig. 1, and in this situation, the region of valid pixel is divided into left side and region, two, right side, and by using left mask 11 and right mask 12 to perform exposure-processed respectively.In addition, when assuming in situation as above, if using the mask pattern shared, then as the situation of the representative instance shown in Fig. 3, between left mask 11 side and left mask and right mask, the output of a pixel column in joint is stably higher than the output of other pixel columns.
In the exposure process of some wiring layer of this kind of cmos image sensor, generally use the mask with mask pattern as shown in FIG. 5.Fig. 5 shows the typical mask pattern of left mask 11 and right mask 12.Additionally, Fig. 5 also show as by using left mask 11 and right mask 12 to perform the distributing of the cmos image sensor that exposure process obtains to form the result of sensor.In Figure 5, holding wire 121-1, FD line 122-1, earth lead 123-1 and vdd line 124-1 form the mask pattern of left mask 11, and holding wire 121-2, FD line 122-2, earth lead 123-2 and vdd line 124-2 form the mask pattern of right mask 12.It should be noted that in the following description, without being distinguished from each other with holding wire 121-2 by holding wire 121-1 when, then each in holding wire 121-1 and holding wire 121-2 is also called holding wire 121 for short.Similarly, without being distinguished from each other by FD line 122-1 and FD line 122-2 when, then each in FD line 122-1 and FD line 122-2 is also called FD line 122 for short.Similarly, without being distinguished from each other with earth lead 123-2 by earth lead 123-1 when, then each in earth lead 123-1 and earth lead 123-2 is also called earth lead 123 for short.Similarly, without being distinguished from each other with vdd line 124-2 by vdd line 124-1 when, then each in vdd line 124-1 and vdd line 124-2 is also called vdd line 124 for short.
In the situation of this representative instance, as shown in Figure 5, only in the pixel column being placed between left mask 11 side and left mask 11 and right mask 12 in joint, as the AL(aluminum of FD line 122-1) width of the part of line is more than the homologous pair width in other each pixels.During manufacturing cmos image sensor 100 shown in this Fig, by use, there is the left mask 11 of this kind of mask pattern and right mask 12 performs exposure process.In other words, cmos image sensor 100 has distributing as shown in FIG. 5.More specifically, in addition to the width of the FD line in the width of a part of FD line 122-1 is more than other each pixels in only some pixel in the pixel column being placed between left mask 11 side and left mask 11 and right mask 12 in joint, cmos image sensor 100 has the circuit structure identical with above-mentioned cmos image sensor 10.In other words, this part is wider than the appropriate section of other each pixels.This part of FD line 122-1 is shown as dotted line frame 110 in Figure 5.
By increasing the width of line, it is possible to increase wiring capacitance C of this line.By and large, electric capacity C is the least, and conversion efficiency is the biggest.Therefore, if electric capacity C is less, then for the signal charge of formed objects, higher signal voltage can be obtained when signal charge being converted into voltage.In other words, in the situation of the representative instance shown in Fig. 5, by increasing the width of a part of the AL line being used as FD line 122-1 within the pixel, it is possible to increase wiring capacitance C of FD line 122-1, thus the FD(floating diffusion in this pixel can be reduced) conversion efficiency.
The pixel column being only pointed between left mask 11 side and left mask 11 and right mask 12 in joint is made that this kind of mask pattern changes.This pixel column is the part the most just with high conversion efficiency.In other words, it is made that this kind of mask pattern changes partly.Therefore, the conversion efficiency of the pixel column being only located between left mask 11 side and left mask 11 and right mask 12 in joint reduces.As shown in the chart in Fig. 6, the only output of this pixel column reduces.In other words, local and the stable inhomogeneities of imaging characteristic is suppressed.
By providing the dot structure utilizing this kind of mask pattern and formed for cmos image sensor 100, can prevent brightness line from resulting from output image as shown in fig. 4 a and fig. 4b, thus improve the quality of image.In the situation of this example, dot structure is wiring layer.Additionally, cmos image sensor 100 can avoid the generation of brightness line by mask pattern is made local change as mentioned above.Therefore, compared with the situation wherein correcting output image by performing image procossing, the increase of cost can be suppressed.In the situation of this example, mask pattern is distributing.
It should be noted that and be not limited to above by the typical method explained with reference to Fig. 5 for the method changing local wiring layout.In other words, any other method can be used, as long as this additive method can be used for changing wiring capacitance as mentioned above.
Other typical distributings
Such as, as shown in Figure 7, it is possible to increase by dotted line 130 around the wiring width of that part of a part of FD line 122-1 to be used as.As another example, as shown in Figure 8, it is possible to increase by dotted line 140 around the wiring width of that part of a part of FD line 122-1 to be used as.As another example, as shown in Figure 9, it is possible to reduce the gap between FD line 122-1 and earth lead 123-1, and do not increase the wiring width of FD line 122-1.In fig .9, this gap by dotted line 150 round.In above-mentioned all scenario, the wiring capacitance of FD line all increases, thus can reduce the conversion efficiency of FD.
Variation
Above content elaborates for changing mask pattern (and therefore changing the layout of the structure of the pixel utilizing the mask of mask pattern after having change and formed) with the method reducing too high conversion efficiency.But, it is not limited to the method for reducing too high conversion efficiency for changing the method for mask pattern.In other words, it is possible to improve too low conversion efficiency.The typical method under this situation is obtained by reversing arbitrary said method.Such as, generally by making FD line thinner or being reduced the wiring capacitance of FD line by the gap between the earth lead of the specific FD line of increase and this FD line neighbouring.By reducing the wiring capacitance of FD line, the conversion efficiency of FD can be improved.
It should be noted that the electric capacity of FD depends not only upon the wiring capacitance of FD line, also often rely on diffusion capacitance and the electric capacity of the part overlapping with gate electrode.Figure 10 shows the typical model of the capacitor between each line in the cmos image sensor being present in as described above and each transistor.As shown in Figure 10, capacitor is present between each line and each transistor.This cmos image sensor also is designed to be controlled the electric capacity of any position being present in this sensor.
Such as, as shown in figure 11, it is possible to the wiring capacitance of the line in change other layers in addition to the wiring layer in above-mentioned each pixel each.In the situation of the representative instance shown in Figure 11, on another wiring layer of cmos image sensor 100, line 161-1 and line 161-2 is configured to overlap with FD line 122-1 and FD line 122-2.Specifically, the specific part of line 161-1 has the big wiring width of the wiring width of other parts than line 161-1 and the part with FD line 122-1 overlaps, and the specific part of line 161-2 has the big wiring width of the wiring width of other parts than line 161-2 and that part with FD line 122-1 overlaps mutually.In fig. 11, the specific part of line 161-1 and the specific part of line 161-2 by dotted line frame 160 round.Therefore, in cmos image sensor 100, it is possible to increase the electric capacity being present in the capacitor between line 161-1 and FD line 122-1 and the electric capacity of the capacitor being present between line 161-2 and FD line 122-1.Then, it is possible to decrease the conversion efficiency being used as the most just there is that pixel of the pixel of high conversion efficiency being present on the left mask shown in Figure 11.
In addition it is also possible to generally change conversion efficiency in terms of the layout in pixel portion.Such as, shown in typical structure as shown in figure 12, it is possible to change size and the FD portion formation implantation pattern reading door.In the situation of the typical structure shown in Figure 12, cmos image sensor 100 includes reading door 171-1 that circumjacent by dotted line frame 170 and left mask FD line 122-1 is associated and reads door 172-1.The size reading door 171-1 and the size reading door 172-1 are made into the size reading door (such as 171-2 and 172-2) more than other in other pixels.In other words, read door 171-1 and reading door 172-1 and be made into other reading doors being thicker than in other pixels.Therefore, in cmos image sensor 100, it is possible to increase be present in the electric capacity of the capacitor read between door 171-1 and FD line 122-1 and be present in the electric capacity of the capacitor read between door 172-1 and FD line 122-1.Then, it is possible to decrease the conversion efficiency being used as the most just there is that pixel of the pixel of high conversion efficiency being present on the left mask shown in Figure 12.
It should be noted that and can also reverse said method according to the mode identical with above-mentioned wiring layer.More specifically, those readings door 171-1 and 172-1 reading door being associated around to be used as in dotted line frame 170 is sized to read less than other in other pixels the size of door (such as 171-2 and 172-2) with the FD line 122-1 of left mask.Therefore, in cmos image sensor 100, the electric capacity being present in the capacitor read between door 171-1 and FD line 122-1 and the electric capacity being present in the capacitor read between door 172-1 and FD line 122-1 can be reduced.Then, the conversion efficiency being used as the most just there is that pixel of the pixel of too low conversion efficiency formed by utilizing left mask can be improved.
In other words, the mask being used for producing all layers is not limited to wiring layer.Therefore, when needs change electric capacity, not only can change the mask pattern of mask for AL wiring layer, also can change the mask pattern of the mask of the arbitrary portion for random layer.In other words, in cmos image sensors, the mask pattern of the mask of the arbitrary portion of the random layer in any pixel can be made into the mask pattern being different from other pixels.It is preferred however that, in the way of not affecting other electric capacity in addition to electric capacity to be altered, change the structure of mask pattern.Such as, the layout changing each line or each transistor in the way of not affecting other electric capacity in addition to relevant capacitor is preferably.
Such as, if change AL wiring pattern is to reduce the gap between AL line located adjacent one another in this pattern, the wiring capacitance between the most each line will increase.But, in this case, the Capacitance Coupled (capacitivecoupling) between AL line is likely to also can increase.The Capacitance Coupled increased is not limited to the Capacitance Coupled between each line.Such as, if owing to carelessness and make the distance between FD wired-AND gate electrode exceedingly shorten, then be likely to also to increase to can not the most unheeded level for the Capacitance Coupled between this FD line and this gate electrode.Additionally, such as, if AL wiring pattern is changed, then the aperture opening ratio (apertureratio) of photodiode is likely to reduce unwelcomely.Thus, it is preferable that change the layout of the structure of mask pattern or pixel in the way of there is not various such side effect (including the unexpected negative interaction that the non-purposiveness object in addition to element the most to be altered is caused).Therefore, it is possible to most easily AL wiring pattern is made a change.In the situation of above-mentioned representative instance, can easily make layout and change, without affecting the aperture opening ratio of pixel.
It should be noted that, it is possible to the imaging characteristic of pixel is controlled by changing the aperture opening ratio of pixel wittingly.Such as, in the situation of the representative instance shown in Figure 13, light blocking layer 181-1 or light blocking layer 181-2, light blocking layer 181-1 or light blocking layer 181-2 it is each formed with for generally utilizing light-shielding film or AL line etc. to limit the light of the photodiode being incident to pixel in each pixel.Light blocking layer 181-1 has the part being superimposed on photodiode, and is provided with opening 182-1 in this part.Similarly, light blocking layer 181-2 has the part being superimposed on photodiode, and is provided with opening 182-2 in this part.In the situation of common light blocking layer, the size of opening is consistent for whole pixels.
According to the representative instance shown in Figure 14 it is readily apparent that the size of the opening 182-1 being arranged in the above-mentioned part of light blocking layer 181-1 is made smaller than the opening of other pixels wittingly.Such as, the size of the opening 182-2 that the size of the opening 182-1 being arranged in the above-mentioned part of light blocking layer 181-1 is made smaller than in the above-mentioned part of light blocking layer 181-2 arranging wittingly.The opening 182-1 of the pixel formed by the left mask shown in use Figure 14 the most just has too high conversion efficiency.By reducing the size of opening 182-1 in this way, it is possible to decrease the conversion efficiency of this pixel.In other words, by reducing the size of opening 182-1, the local of imaging characteristic and stable inhomogeneities can be suppressed.
Without it should be noted that, it is also possible to reverse said method according to the mode identical with above-mentioned wiring layer.More specifically, the size of the opening 182-1 being arranged in the above-mentioned part of light blocking layer 181-1 is fabricated to the opening more than other pixels wittingly.Such as, the size of the opening 182-1 being arranged in the above-mentioned part of light blocking layer 181-1 is fabricated to wittingly more than the size of the opening 182-2 of setting in the above-mentioned part of light blocking layer 181-2.This is because: the opening 182-1 of the pixel formed by the left mask shown in use Figure 14 the most just has too low conversion efficiency.By increasing the size of opening 182-1 in this way, the conversion efficiency of this pixel can be improved.
Above content has illustrated the local of the imaging characteristic near the joint between left side and right side mask and stable inhomogeneities.But, cause the reason of the inhomogeneities of imaging characteristic to be not limited to above-mentioned reason.Thus, the local of imaging characteristic and stable inhomogeneities are likely to result from any position of the pixel groups in cmos image sensor.In other words, cmos image sensor provided by the present invention need not be the sensor with joint type of exposure as described above.
As an example, the cmos image sensor 400 shown in Figure 15 A does not have the joint between mask.But, on pixel column, generate ordinate along predetermined vertical direction.In the situation of the representative instance shown in this figure, above-mentioned pixel column is shown as ordinate and generates pixel column 401.In cmos image sensor 400, the only layout of the structure of each pixel on change ordinate generation pixel column 401, to suppress the local of imaging characteristic and stable inhomogeneities.In this way, it is can also be applied to be vertically present in the pixel column of other positions in addition to the position of the joint being originally assigned between mask.
As another example, the cmos image sensor 410 shown in Figure 15 B does not the most have the joint between mask.But, on pixel column, generate horizontal line along predetermined horizontal direction.In the situation of the representative instance shown in this figure, above-mentioned pixel column is shown as horizontal line and generates pixel column 411.In cmos image sensor 410, the only layout of the structure of each pixel on change horizontal line generation pixel column 411, to suppress the local of imaging characteristic and stable inhomogeneities.In this way, it is can also be applied to the pixel column of horizontally oriented other positions in addition to the position except the joint being originally assigned between mask.
As another example, the cmos image sensor 420 shown in Figure 15 C does not the most have the joint between mask.But, in the group of some pixel predetermined, create exception.In the situation of the representative instance shown in this figure, above-mentioned pixel groups is shown as point defect/block defect and produces position 421.In cmos image sensor 420, only change the layout of structure producing each pixel at position 421 in point defect/block defect, using suppression as the local of imaging characteristic and the above-mentioned exception of stable inhomogeneities.In this way, it is can also be applied to following pixel groups: this pixel groups can be generated from point defect or the block defect pixel group of other positions in addition to the position of the joint being originally assigned between mask.
Without it should be noted that, the layout of the structure of each of which pixel can be with more than one by position to be altered or region.In other words, the layout of the structure of each pixel can be changed at multiple positions or multiple region.
2, the second embodiment (imaging device)
Above-mentioned cmos image sensor can be used in device, for use as a part for this device.Such as, cmos image sensor can be embedded in imaging device.
Figure 16 is showing the block diagram of the typical structure of the primary clustering constituting imaging device 500 provided by the present invention.
As shown in figure 16, imaging device 500 includes lens section 511, cmos image sensor 512, A/D(analog to digital) transducer 513, operating portion 514, control portion 515, image processing part 516, display part 517, coding and decoding process portion 518 and record portion 519.
Focus is adjusted to subject by lens section 511, and assembles the light coming from focusing position (focus has been adjusted to this focusing position).Subsequently, the light assembled is provided to cmos image sensor 512 by lens section 511.
Cmos image sensor 512 is the solid imaging device with aforementioned structure.Cmos image sensor 512 receives into incoming light, and performs to convert incident light into the photoelectric conversion process of the analog voltage signal corresponding with the intensity of this light.Subsequently, this analog voltage signal is provided to A/D converter 513 by cmos image sensor 512.Cmos image sensor 512 can be any one in foregoing cmos image sensor 100,400,410 and 420.In other words, the technology of the present invention can be applicable to cmos image sensor 512.
A/D converter 513 receives by cmos image sensor 512 according to providing the analog voltage signal come for the predetermined sequential of each pixel.Analog voltage signal is converted into data image signal (being the most also properly termed picture element signal) by A/D converter 513, and sequentially provides these picture signals to image processing part 516 according to predetermined sequential.
Operating portion 514 is generally configured to include such as multi-direction rolling wheel (jogdial；Trade mark), key, button and contact panel.User inputs by operating portion 514 is operable to input operation, and the signal that represent operation input is then provided to control portion 515 by operating portion 514.
Based on the signal (its signal being used as to represent the operation input inputted by user) received from operating portion 514, lens section 511, cmos image sensor 512, A/D converter 513, image processing part 516, display part 517, coding and decoding process portion 518 and record portion 519 are controlled by control portion 515.
The image processing part 516 picture signal to receiving from A/D converter 513 performs various image procossing, and the picture signal result as image procossing obtained provides to display part 517 and coding and decoding process portion 518.Above-mentioned image procossing includes various process, and for giving some instances, such as white balance process, demosaicing (color interpolation) process, matrix disposal, gamma correction (gammacorrection) process and YC conversion process.
Display part 517 is configurable to include liquid crystal display etc..Display part 517 shows the image of subject based on the picture signal received from image processing part 516.
Coding and decoding process portion 518 performs coded treatment according to predetermined method and based on the picture signal received from image processing part 516, and the view data then result as coded treatment obtained provides to record portion 519.
Record portion 519 is by the memorizer employed in the Imagery Data Recording that receives from coding and decoding process portion 518 to this record portion 519.Optionally, image processing part 516 reading and be recorded in the view data in record portion 519, then this view data is provided to display part 517 by image processing part 516, thus is shown by images based on these data.
It should be noted that the structure of the imaging device that have employed solid imaging device based on the technology of the present invention is not limited to said structure.In other words, the imaging device that have employed solid imaging device based on the technology of the present invention also can have another structure.
Additionally, as it has been described above, embodiments of the present invention are an imaging device or an image device.But, embodiments of the present invention can also be multiple imaging device or multiple image device.In turn, the structure (including multiple imaging device or the structure of multiple image device) explained in above content can be integrated in the structure of an imaging device or an image device respectively.It addition, without it should be noted that, the structure of each imaging device or each image device also can increase other structures having in addition to those described.Additionally, as fruit structure or operation are actually consistent in the entire system, a part for the structure of the most a certain imaging device or a certain image device also can be included in another imaging device or another image device.In other words, embodiments of the present invention are not limited to the various embodiments described above.In other words, each embodiment can be made various change, as long as these changes fall in the range of without departing from the scope of the invention.
It should be noted that the technology that the present invention provides also apply be applicable to implementation below.
(1) a kind of image device, it includes that at least one special pixel, the layout of the structure of described special pixel are made into the layout of the structure being different from other each pixels in addition to described special pixel.
(2) according to the image device described in embodiment (1), wherein said special pixel is the pixel that imaging characteristic is stably different from the imaging characteristic of other each pixels described；And the placement differences between the structure of the structure of described special pixel and other each pixels described is used to the inhomogeneities of the described imaging characteristic suppressing described special pixel to be presented.
(3) according to the image device described in embodiment (1) or (2), the pixel near joint that wherein said special pixel is between mask.
(4) according to embodiment (1) to the image device according to any one of (3), wherein said special pixel includes that aluminum steel, the shape of described aluminum steel are made into the shape of the aluminum steel being different from other each pixels described.
(5) according to the image device described in embodiment (4), the described aluminum steel included by wherein said special pixel is made into the aluminum steel being coarser than other each pixels described.
(6) according to the image device described in embodiment (4), the described aluminum steel included by wherein said special pixel is made into the aluminum steel being narrower than other each pixels described.
(7) according to embodiment (4) to the image device according to any one of (6), wherein said aluminum steel is the line of floating diffusion portion.
(8) according to embodiment (1) to the image device according to any one of (7), wherein said special pixel includes that aluminum steel, described aluminum steel are arranged on the position different from the position of the aluminum steel of other each pixels described.
(9) according to the image device described in embodiment (8), wherein said special pixel includes the aluminum steel being mutually adjacently, described in the aluminum steel that is mutually adjacently be spaced apart by gap, described gap is made into the gap of the aluminum steel being narrower than other each pixels described.
(10) according to the image device described in embodiment (8), wherein said special pixel includes the aluminum steel being mutually adjacently, described in the aluminum steel that is mutually adjacently be spaced apart by gap, described gap is made into the gap of the aluminum steel being wider than other each pixels described.
(11) according to embodiment (8) to the image device according to any one of (10), wherein said aluminum steel is line and the earth lead of floating diffusion portion.
(12) according to embodiment (1) to the image device according to any one of (11), wherein said special pixel includes reading door, and the size of described reading door is made into the size reading door being different from other each pixels described.
(13) according to the image device described in embodiment (12), the size of the described reading door included by wherein said special pixel is made into the size reading door more than other each pixels described.
(14) according to the image device described in embodiment (12), the size of the described reading door included by wherein said special pixel is made into the size reading door less than other each pixels described.
(15) according to embodiment (1) to the image device according to any one of (14), wherein said special pixel has floating diffusion portion formation and implants pattern, and described floating diffusion portion formation implantation pattern is made into the floating diffusion portion formation implantation pattern being different from other each pixels described.
(16) according to embodiment (1) to the image device according to any one of (15), wherein said special pixel has opening, and the size of described opening is made into the size of the opening being different from other each pixels described.
(17) according to the image device described in embodiment (16), the size of the described opening that wherein said pixel is had is made into the size of the opening less than other each pixels described.
(18) according to the image device described in embodiment (16), the size of the described opening that wherein said pixel is had is made into the size of the opening more than other each pixels described.
(19) a kind of imaging device, it includes that image device, described image device include that special pixel, the layout of the structure of described special pixel are made into the layout of the structure being different from other each pixels in addition to described special pixel.
Claims (18)
1. an image device, it includes at least one special pixel, the layout of the structure of described special pixel is made into the layout of the structure being different from other each pixels in addition to described special pixel, wherein said special pixel includes reading door, and the size of described reading door is made into the size reading door being different from other each pixels described.
Image device the most according to claim 1, wherein,
Described special pixel is the pixel that imaging characteristic is stably different from the imaging characteristic of other each pixels described,
Further, the placement differences between structure and the structure of other each pixels described of described special pixel is used to be suppressed the inhomogeneities of described imaging characteristic by described special pixel.
Image device the most according to claim 1, the pixel near joint that wherein said special pixel is between mask.
Image device the most according to claim 1, wherein said special pixel includes that aluminum steel, the shape of described aluminum steel are made into the shape of the aluminum steel being different from other each pixels described.
Image device the most according to claim 4, the described aluminum steel included by wherein said special pixel is made into the aluminum steel being coarser than other each pixels described.
Image device the most according to claim 4, the described aluminum steel included by wherein said special pixel is made into the aluminum steel being narrower than other each pixels described.
Image device the most according to claim 4, wherein said aluminum steel is the line of floating diffusion portion.
Image device the most according to claim 1, wherein said special pixel includes that aluminum steel, described aluminum steel are arranged on the position different from the position of the aluminum steel of other each pixels described.
Image device the most according to claim 8, wherein said special pixel includes the aluminum steel being mutually adjacently, described in the aluminum steel that is mutually adjacently be spaced apart by gap, described gap is made into the gap of the aluminum steel being narrower than other each pixels described.
Image device the most according to claim 8, wherein said special pixel includes the aluminum steel being mutually adjacently, described in the aluminum steel that is mutually adjacently be spaced apart by gap, described gap is made into the gap of the aluminum steel being wider than other each pixels described.
11. image devices according to claim 8, wherein said aluminum steel is line and the earth lead of floating diffusion portion.
12. image devices according to claim 1, the size of the described reading door included by wherein said special pixel is made into the size reading door more than other each pixels described.
13. image devices according to claim 1, the size of the described reading door included by wherein said special pixel is made into the size reading door less than other each pixels described.
14. according to the image device according to any one of claim 1 to 13, wherein said special pixel has floating diffusion portion formation and implants pattern, and described floating diffusion portion formation implantation pattern is made into the floating diffusion portion formation implantation pattern being different from other each pixels described.
15. according to the image device according to any one of claim 1 to 13, and wherein said special pixel has opening, and the size of described opening is made into the size of the opening being different from other each pixels described.
16. image devices according to claim 15, the size of the described opening that wherein said special pixel is had is made into the size of the opening less than other each pixels described.
17. image devices according to claim 15, the size of the described opening that wherein said special pixel is had is made into the size of the opening more than other each pixels described.
18. 1 kinds of imaging devices, it includes according to the image device according to any one of claim 1 to 17.
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| JP2011147932A JP6115982B2 (en) | 2011-07-04 | 2011-07-04 | Imaging device and imaging apparatus |
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|---|---|
| US (1) | US9324750B2 (en) |
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| WO2017104438A1 (en) * | 2015-12-16 | 2017-06-22 | ソニー株式会社 | Image capturing element and drive method, and electronic device |
| JP2017183658A (en) * | 2016-03-31 | 2017-10-05 | ソニー株式会社 | Solid state image pick-up device, imaging apparatus, and electronic apparatus |
| JP7019596B2 (en) * | 2016-12-09 | 2022-02-15 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image sensor and electronic equipment |
| JP7336206B2 (en) | 2019-02-27 | 2023-08-31 | キヤノン株式会社 | Method for manufacturing photoelectric conversion device |
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| CN101909167A (en) * | 2009-06-05 | 2010-12-08 | 索尼公司 | Solid-state imaging device, method of driving the same, and electronic system including the device |
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| JPH05205990A (en) * | 1992-01-24 | 1993-08-13 | Sony Corp | Pattern forming method |
| US7187410B2 (en) * | 2001-03-05 | 2007-03-06 | Matsushita Electric Industrial Co., Ltd. | Solid state image sensor |
| US20040113151A1 (en) * | 2002-10-11 | 2004-06-17 | Kabushiki Kaisha Toshiba | CMOS image sensor |
| JP3890333B2 (en) | 2004-02-06 | 2007-03-07 | キヤノン株式会社 | Solid-state imaging device |
| JP4067054B2 (en) * | 2004-02-13 | 2008-03-26 | キヤノン株式会社 | Solid-state imaging device and imaging system |
| JP4940540B2 (en) * | 2004-10-07 | 2012-05-30 | ソニー株式会社 | Semiconductor device |
| US7880787B2 (en) * | 2005-09-14 | 2011-02-01 | Fujifilm Corporation | MOS image sensor |
| US7755679B2 (en) * | 2007-03-07 | 2010-07-13 | Altasens, Inc. | Apparatus and method for reducing edge effect in an image sensor |
| JP5173542B2 (en) * | 2008-04-04 | 2013-04-03 | キヤノン株式会社 | Photoelectric conversion device |
| US8253174B2 (en) * | 2008-11-26 | 2012-08-28 | Palo Alto Research Center Incorporated | Electronic circuit structure and method for forming same |
| JP2010141093A (en) | 2008-12-11 | 2010-06-24 | Sony Corp | Semiconductor apparatus and method of manufacturing the same |
| US20110175981A1 (en) * | 2010-01-19 | 2011-07-21 | Chun-Hung Lai | 3d color image sensor |
| JP5677238B2 (en) * | 2011-08-29 | 2015-02-25 | 株式会社日立製作所 | Solid-state imaging device |
-
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