CN102863012A - Synthetic method of zinc oxide nanometer nail - Google Patents

Synthetic method of zinc oxide nanometer nail Download PDF

Info

Publication number
CN102863012A
CN102863012A CN2012103638208A CN201210363820A CN102863012A CN 102863012 A CN102863012 A CN 102863012A CN 2012103638208 A CN2012103638208 A CN 2012103638208A CN 201210363820 A CN201210363820 A CN 201210363820A CN 102863012 A CN102863012 A CN 102863012A
Authority
CN
China
Prior art keywords
zinc oxide
synthetic method
monocrystalline silicon
zinc
silicon piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2012103638208A
Other languages
Chinese (zh)
Other versions
CN102863012B (en
Inventor
王冰
郑照强
吴环宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN201210363820.8A priority Critical patent/CN102863012B/en
Publication of CN102863012A publication Critical patent/CN102863012A/en
Application granted granted Critical
Publication of CN102863012B publication Critical patent/CN102863012B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention provides a synthetic method of a zinc oxide nanometer nail. The synthetic method includes the following steps: (1) mixing graphite and zinc oxide powder evenly with the approximate mass ratio as 2:3; (2) sputtering a layer of a gold film on a monocrystalline silicon piece through an ion sputtering method; (3) placing the monocrystalline silicon piece with the sputtered gold film near mixed powder of the graphite and the zinc oxide powder; (4) vacuumizing the whole system, and then leading a small amount of nitrogen into the system; and (5) rising the temperature of the system to 900 to 1100 DEG C, keeping the temperature for a period of time and cooling. The synthetic method has the advantages that a zinc oxide nanometer crystal top cover is hexagonal, and the zinc oxide nanometer crystal is large in area and easy in adhesion operation. The lower portion of the zinc oxide nanometer crystal is in a shape of a thin strip and is easy to line up neatly. Simultaneously zinc oxide has good optical properties so that the zinc oxide nanometer nail becomes a nanometer material suitable for being used as a nanometer optical resonant cavity.

Description

The synthetic method of zinc-oxide nano nail
Technical field
The present invention relates to a kind of synthetic method of zinc-oxide nano nail.
Background technology
Optical resonator refer to light wave therein back reflective thereby the cavity of luminous energy feedback is provided.The effect of resonator cavity is to select frequency light certain, that direction is consistent to do prepreerence amplification, and the light of other frequencies and direction is suppressed.The effect of optical resonator provides feedback energy and selective light wave line of propagation and frequency.Modern age the field such as microelectronic component have significant application prospect.
The nanocomposite optical resonator cavity is the optical resonator with nanoscale.Select nanostructure as the core in the existing nanocomposite optical resonator cavity, generally take the optical parametric of zinc oxide and gallium oxide nano material comparatively for suiting, simultaneously, higher to the shape need of nano material crystalline structure as resonator cavity.
Summary of the invention
The object of the present invention is to provide a kind of suitable nano material that is applied to the nanocomposite optical resonator cavity.
The present invention is achieved through the following technical solutions:
The synthetic method of described zinc-oxide nano nail comprises the steps:
(1) graphite and Zinc oxide powder are about the ratio mixing of 2:3 with mass ratio;
(2) at monocrystalline silicon piece by ion sputtering mode sputter layer of gold film;
(3) near the monocrystalline silicon piece of golden film of having placed sputter the mixed powder of graphite and zinc oxide;
(4) whole system is vacuumized, afterwards a small amount of nitrogen is passed in the system.
(5) make system be rapidly heated to 900 to 1100 degrees centigrade, and keep cooling off after for some time.
Preferably, described graphite quality is about 2mg, and described zinc oxide quality is about 3mg, and described monocrystalline silicon piece size is about 5mm 2, the mixed powder of described graphite and zinc oxide and the about 1cm of described monocrystalline silicon piece spacing.
Preferably, the sputtering time in the step (2) is about 30 seconds, and sputtering current is about 2 milliamperes.
Preferably, the amount that passes into nitrogen in the step (4) is about 300sccm, and pressure maintains 1300Pa approximately in the system.
Preferably, described monocrystalline silicon piece sputtering surface is 100.
Preferably, temperature-rise period is as follows in the step (5): system is begun to be warming up to 1000 degrees centigrade through 25 minutes from room temperature, and kept 1 hour.
Beneficial effect of the present invention is: gained zinc oxide nano-crystal top cover is hexagon, and area is larger, is easy to adhere to operation; The below is elongated strip, is easy to marshalling, is aided with simultaneously the good optical properties of zinc oxide, so that gained zinc-oxide nano of the present invention nail becomes a kind of suitable nano material as the nanocomposite optical resonator cavity.
Description of drawings
Fig. 1 is products obtained therefrom Electronic Speculum figure of the present invention.
Embodiment
Below in conjunction with the drawings and the specific embodiments the present invention is described further:
Embodiment one
(1) graphite and Zinc oxide powder are about the ratio mixing of 2:3 with mass ratio; Described graphite quality is about 2mg, and described zinc oxide quality is about 3mg, and described monocrystalline silicon piece size is about 5mm 2, the mixed powder of described graphite and zinc oxide places silica tube;
(2) at monocrystalline silicon piece by ion sputtering mode sputter layer of gold film, sputtering time is about 30 seconds, sputtering current is about 2 milliamperes, described monocrystalline silicon piece sputtering surface is 100;
(3) near the monocrystalline silicon piece of golden film of having placed sputter the mixed powder of graphite and zinc oxide; Concrete operations are as follows: keep flat silica tube, put into described monocrystalline silicon piece in the mixed powder outside, make mixed powder and the about 1cm of described monocrystalline silicon piece spacing.
(4) whole system is vacuumized, afterwards a small amount of nitrogen is passed in the system, the amount that passes into nitrogen is about 300sccm, and pressure maintains 1300Pa approximately in the system.
(5) system is begun to be warming up to 1000 degrees centigrade through 25 minutes from room temperature, and keep naturally cooling after 1 hour.
The gained crystalline structure as shown in Figure 1, the top about 17.2um of the hexagon staple face length of side, the about 10um of ailhead height.The high about 56.6um of following hexagon cylinder, the about 5um of the length of side, diameter is about 10um.
The according to the above description announcement of book and instruction, those skilled in the art in the invention can also carry out suitable change and modification to above-mentioned embodiment.Therefore, the embodiment that discloses and describe above the present invention is not limited to also should fall in the protection domain of claim of the present invention modifications and changes more of the present invention.In addition, although used some specific terms in this specification sheets, these terms do not consist of any restriction to the present invention just for convenience of description.

Claims (6)

1. the synthetic method of a zinc-oxide nano nail is characterized in that comprising the steps:
(1) graphite and Zinc oxide powder are about the ratio mixing of 2:3 with mass ratio;
(2) at monocrystalline silicon piece by ion sputtering mode sputter layer of gold film;
(3) near the monocrystalline silicon piece of golden film of having placed sputter the mixed powder of graphite and zinc oxide;
(4) whole system is vacuumized, afterwards a small amount of nitrogen is passed in the system;
(5) make system be rapidly heated to 900 to 1100 degrees centigrade, and keep cooling off after for some time.
2. the synthetic method of described zinc-oxide nano nail according to claim 1, it is characterized in that: described graphite quality is about 2mg, and described zinc oxide quality is about 3mg, and described monocrystalline silicon piece size is about 5mm 2, the mixed powder of described graphite and zinc oxide and the about 1cm of described monocrystalline silicon piece spacing.
3. the synthetic method of described zinc-oxide nano nail according to claim 1, it is characterized in that: the sputtering time in the step (2) is about 30 seconds, and sputtering current is about 2 milliamperes.
4. the synthetic method of described zinc-oxide nano nail according to claim 1, it is characterized in that: the amount that passes into nitrogen in the step (4) is about 300sccm, and pressure maintains 1300Pa approximately in the system.
5. the synthetic method of described zinc-oxide nano nail according to claim 1, it is characterized in that: described monocrystalline silicon piece sputtering surface is 100.
6. the synthetic method of described zinc-oxide nano nail according to claim 1 is characterized in that temperature-rise period is as follows in the step (5): system is begun to be warming up to 1000 degrees centigrade through 25 minutes from room temperature, and kept 1 hour.
CN201210363820.8A 2012-09-26 2012-09-26 Synthetic method of zinc oxide nanometer nail Expired - Fee Related CN102863012B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210363820.8A CN102863012B (en) 2012-09-26 2012-09-26 Synthetic method of zinc oxide nanometer nail

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210363820.8A CN102863012B (en) 2012-09-26 2012-09-26 Synthetic method of zinc oxide nanometer nail

Publications (2)

Publication Number Publication Date
CN102863012A true CN102863012A (en) 2013-01-09
CN102863012B CN102863012B (en) 2014-12-03

Family

ID=47442190

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210363820.8A Expired - Fee Related CN102863012B (en) 2012-09-26 2012-09-26 Synthetic method of zinc oxide nanometer nail

Country Status (1)

Country Link
CN (1) CN102863012B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103837517B (en) * 2014-03-25 2016-08-03 哈尔滨工业大学 The preparation method of metallic film/nanometic zinc oxide rod array Fluorescence Increasing material
CN108326284A (en) * 2018-02-07 2018-07-27 中南民族大学 A kind of Rh nano-nails cluster and its synthetic method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9775339B1 (en) 2016-04-05 2017-10-03 International Business Machines Corporation Lateral silicon nanospikes fabricated using metal-assisted chemical etching

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1746113A (en) * 2005-08-16 2006-03-15 北京理工大学 Reactor technology for growing zinc oxide with nanometer structure by burning-oxidizing method
US20070184975A1 (en) * 2004-03-11 2007-08-09 Postech Foundation Photocatalyst including oxide-based nanomaterial
CN102602981A (en) * 2011-01-21 2012-07-25 吉林师范大学 Non-toxic environment-friendly preparation method of ZnO nanometer rod

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070184975A1 (en) * 2004-03-11 2007-08-09 Postech Foundation Photocatalyst including oxide-based nanomaterial
CN1746113A (en) * 2005-08-16 2006-03-15 北京理工大学 Reactor technology for growing zinc oxide with nanometer structure by burning-oxidizing method
CN102602981A (en) * 2011-01-21 2012-07-25 吉林师范大学 Non-toxic environment-friendly preparation method of ZnO nanometer rod

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103837517B (en) * 2014-03-25 2016-08-03 哈尔滨工业大学 The preparation method of metallic film/nanometic zinc oxide rod array Fluorescence Increasing material
CN108326284A (en) * 2018-02-07 2018-07-27 中南民族大学 A kind of Rh nano-nails cluster and its synthetic method
CN108326284B (en) * 2018-02-07 2019-02-05 中南民族大学 A kind of Rh nano-nail cluster and its synthetic method

Also Published As

Publication number Publication date
CN102863012B (en) 2014-12-03

Similar Documents

Publication Publication Date Title
Kim et al. Highly conductive coaxial SnO2− In2O3 heterostructured nanowires for Li ion battery electrodes
CN102863012B (en) Synthetic method of zinc oxide nanometer nail
Leung et al. Changing the shape of ZnO nanostructures by controlling Zn vapor release: from tetrapod to bone-like nanorods
Du et al. Indium hydroxide and indium oxide nanospheres, nanoflowers, microcubes, and nanorods: synthesis and optical properties
Tsai et al. Water-driven formation of luminescent Zn2GeO4 nanorods from Zn-containing Ge nanoparticles
CN104078164B (en) A kind of preparation method of Cu nanowire network of Graphene carbon film parcel
Guo et al. Preparation and optical properties of Mg-doped ZnO nanorods
Zhang et al. Influence of glucose on the structural and optical properties of ZnO thin films prepared by sol–gel method
Wang et al. Mineralizer-assisted shape-control of rare earth oxide nanoplates
WO2008108128A1 (en) Dielectric material, capacitor using dielectric material, semiconductor device using dielectric material, and method for producing dielectric material
CN104603323A (en) Sputtering target, oxide semiconductor thin film, and method for producing same
Guo et al. Vertically aligned growth of ZnO nanonails by nanoparticle-assisted pulsed-laser ablation deposition
CN102351249B (en) Method for preparing molybdenum trioxide in nanometer structure
CN104418380B (en) A kind of zinc oxide nano-wire array structure and preparation method thereof
Ran et al. Effect of annealing temperature on optical properties of Er-doped ZnO films prepared by sol–gel method
Tiwari et al. Effect of capping on the mechanoluminescence of γ-irradiated ZnS: Cu nanophosphors
CN106856164A (en) Adopt patterned substrate and preparation method thereof outward
Zhao et al. Crystallization effects of nanocrystalline GaN films on field emission
CN102312211A (en) Method for forming amorphous transparent oxide film at low temperature
Seo et al. Self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering
Zhao et al. Enhanced ferromagnetism of cluster-assembled BiFeO3 nanostructured films
Hsu et al. A study on rapid growth and piezoelectric effect of ZnO nanowires array
Guo et al. Substrate effects on ZnO nanostructure growth via nanoparticle-assisted pulsed-laser deposition
Chaonan et al. Preparation and spectroscopic properties of Y2O3: Eu3+ nanopowders and ceramics
Shin et al. Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (1 1 1) substrates

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141203

Termination date: 20160926