CN102856640B - High-isolation dual-polarization E-type microstrip antenna with spurious wafer - Google Patents
High-isolation dual-polarization E-type microstrip antenna with spurious wafer Download PDFInfo
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Abstract
The invention discloses a high-isolation dual-polarization E-type microstrip antenna with a spurious wafer. The antenna has the advantages of high isolation, low cross polarization, small size and simple structure. The antenna adopts a double-layer E-type patch form; E-type patches are respectively printed on both upper and lower surfaces of an upper dielectric slab; slotting directions of the E-type patches are orthogonal; and two linear polarizations in the direction of plus and minus 45 degrees are respectively generated by coaxial probe feed. The high-isolation dual-polarization E-type microstrip antenna has the biggest innovations that two E-type patches are respectively printed on both the surfaces of the same dielectric slab; a conventional single-polarization E-type patch antenna is expanded to a dual-polarization E-type patch antenne; and the high isolation and the low cross polarization characteristic are obtained. Under the condition that the return loss is lower than minus 15dB, the bandwidth of 7.7 percent can be reached, the isolation is lower than minus 30dB, a directional diagram is stable, the cross polarization is good, and the gain is in the range of 6.8dBi-7.4dBi. The high-isolation dual-polarization E-type microstrip antenna can be applied to a micro mobile base station.
Description
Technical field
The invention belongs to antenna works technical field, relate to a kind of double polarized micro strip antenna, is a kind of high isolation dual polarized E type microstrip antenna that can be used for mini mobile base station specifically.
Background technology
Micro-base station (Pico) has that volume is little, power is little, lightweight, the feature that is easy to carry and installs, is applicable to hot zones and indoor covering occasion.Meanwhile, micro-base station (Pico) can solve the difficulties that fast repairing is blind, focus traffic is received and dispatched, low cost covers that current networking runs into well.Micro-base station (Pico) is as the relay forwarding station between base station and cellphone subscriber, mainly that the radiofrequency signal of base station, location or user mobile phone is received, amplified and retransmits, to increase field intensity, lower cost ground solves the communication blind district that a variety of causes forms, improve call completing rate, expand the coverage of base station service area, reach the object that service area extends.Along with the development that domestic network is built, the network degree of depth covers the main target that becomes operator.Vital effect is being brought into play in micro-base station (Pico) in networking and network optimization process.Adopt ± 45 ° of dual polarization modes of micro-antenna for base station, dual polarized antenna can form a pair of polarization orthogonal, mode of operation that frequency is identical simultaneously more.Due to the distinctive advantage of dual polarized antenna, can receive the whole polarization informations in electromagnetic wave, have very strong anti-interference, improve system sensitivity and form the abilities such as polarization system, therefore caused people's broad interest.
Microstrip antenna is because section is low, easily processing, and high conformity, the feature such as polarize easy to control, is often used to realize dual polarized antenna, micro-base station miniaturization that is content with very little, requirement cheaply.But how improving two isolations between polarization, is the subject matter that double polarized micro strip antenna faces., realizing aspect high isolation dual polarized microstrip antenna, Wuhan Hongxin Telecommunication Technologies Co., Ltd has announced a kind of feed structure of high isolation dual polarized microstrip antenna in patent CN201188461Y for this reason.The internal interference of antenna element own and the array that adopt anti-phase feed structure to eliminate between double polarized micro strip antenna port disturb, thereby improve isolation and cross polarization.Between this antenna ends mouth in working frequency range isolation lower than-28dB.But due to the introducing of power splitter, antenna structure complexity and its radiance are also decreased.Institutes Of Technology Of Nanjing has announced a kind of dual-polarized low mutual coupling microstrip antenna unit that is applied to X-band in patent CN201536151U, by traditional H type groove coupling feed double polarized micro strip antenna is improved, make H groove into groove between U and H, realized high-isolation characteristic, in working band lower than-40dB.But this kind of structure be due to the introducing of multilayer dielectricity plate, adding that the air gap that fluting introduces is very large on the impact of antenna performance, it is very large that this comes in and goes out the result of emulation and actual measurement, and the processing mode cost of employing is also high.It is low that Huawei Device Co., Ltd. has announced a kind of cost in patent CN102110906A, the double polarized micro strip antenna of handling ease.Improve isolation by corner cut size and number, between 3.3GHz-3.7GHz, isolation reaches 25dB, relatively low.Yang Fan is at IEEE TRANSACTIONS ON ANTENNAS ANDPROPAGATION, 2001. deliver be entitled as in " Wide-Band E-Shaped Patch Antennas for Wireless Communications " and introduced a kind of E type groove single card sheet microband antenna unit, this antenna bandwidth of operation is 2.2GHz-2.7GHz.But section is high, and do not there is dual polarization characteristic.
Summary of the invention
The present invention is in view of above-mentioned technical background, and object is that the problem how double polarized micro strip antenna to meeting low cost, low section, miniaturization improves isolation is studied, and has proposed a kind of dual polarization E type paster antenna of the high-isolation with parasitic disk.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
The dual polarization E type patch antenna element that the invention provides a kind of high-isolation with parasitic disk, comprises top dielectric plate and layer dielectric plate, and described top dielectric plate is supported and be placed in the top of layer dielectric plate by least three plastics screws; Two surfaces up and down of described top dielectric plate are printed on respectively the E shape paster of the E shape paster of fluting direction-45 ° and fluting direction+45 °, the upper surface of layer dielectric plate is printed on circular patch, lower surface all covers copper as metallic reflection plate, the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 ° is connected with one of them probe respectively and keeps gap respectively and between another probe by the circular hole of paster itself, and described circular patch makes all to keep gap between it and two probes by two circular holes above it.
Further technical scheme is: the orthogonal thereto state of E type groove of the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 °, and the length of each groove is different.
Further technical scheme is: the center of described circular patch does not overlap with center of antenna.
Further technical scheme is: the rectangular strip of the centre of the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 ° is all truncated sub-fraction, and it is different that two E type pasters are truncated partial-length.
Further technical scheme is: the surrounding of the E shape paster of the E shape paster of described fluting direction-45 ° and fluting direction+45 ° is all notched, and four corner cut sizes for each E type paster are the same, and still the corner cut of two E type pasters is compared and varied in size.
Compared with prior art, one of beneficial effect of the present invention is: first E type paster is applied in double polarized micro strip antenna, and has effectively realized miniaturization by loading circular patch, antenna thickness is 0.06 wavelength.The in the situation that of be less than-15dB of antenna element S11, covered 2.5GHz-2.69GHz frequency range, and in working band, antenna ends mouth isolation is all lower than-30dB.This antenna has simple in structure, lightweight, easily processing, and the feature that cost is low, meets the basic demand of micro-antenna for base station.And known by emulation and actual measurement, the stable performance of antenna, insensitive to each parameter, be easy to group battle array.
Brief description of the drawings
Fig. 1 is a kind of dual polarization E type patch antenna element structure chart with parasitic disk of the present invention;
Fig. 2 is the vertical view of dual polarization E type paster antenna of the present invention;
Fig. 3 is the end view of dual polarization E type paster antenna of the present invention;
Fig. 4 is the obverse and reverse front view of the top dielectric plate of dual polarization E type paster antenna of the present invention;
Fig. 5 is the obverse and reverse front view of the layer dielectric plate of dual polarization E type paster antenna of the present invention;
Fig. 6 is S parameters simulation and the test curve figure of dual polarization E type paster antenna of the present invention;
Fig. 7 is emulation and the measured curve figure of dual polarization E type paster antenna two-port isolation of the present invention;
Fig. 8 is actual measurement E face and the H face directional diagram of dual polarization E type paster antenna of the present invention port one (+45 °) in the time of 2.6GHz;
Fig. 9 is double polarized micro strip antenna of the present invention port 2(-45 ° in the time of 2.6GHz) actual measurement E face and H face directional diagram;
Figure 10 is actual measurement gain and the efficiency of double polarized micro strip antenna of the present invention in the time of 2.5-2.7GHz.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further elaborated.
Fig. 1 shows the overall structure schematic diagram of one embodiment of the invention, shown in figure 1, one embodiment of the present of invention are a kind of dual polarization E type patch antenna elements with parasitic disk, in this antenna element, be provided with top dielectric plate 1 and layer dielectric plate 7, described top dielectric plate 1 is supported and is placed in the top of layer dielectric plate 7 by least three plastics screws 6; Go out as shown in Figure 1, plastics screw is set to four herein, and is distributed near four angles of top dielectric plate 1 and layer dielectric plate 7.
With reference to figure 2, shown in Fig. 3 and Fig. 4, two surfaces up and down of described top dielectric plate 1 are printed on respectively the E type paster 3 of the E type paster 2 of fluting direction-45 ° and fluting direction+45 °, the E shape paster 2 of described fluting direction-45 ° is connected with probe 4, and the E shape paster 2 of fluting direction-45 ° by itself circular hole 14 and probe 5 between keep gap.Similarly, the E type paster 3 of described fluting direction+45 ° is connected with probe 5, and the E type paster 3 of fluting direction+45 ° by itself circular hole 13 and probe 4 between keep gap.
With reference to figure 2, shown in Fig. 3 and Fig. 5, the upper surface of described layer dielectric plate 7 is printed on circular patch 9, and lower surface all covers copper as metallic reflection plate 8, and the circular hole (10) on circular patch 9 and circular hole (11) make all to keep gap between circular patch 9 and probe 4 and probe 5.The described size of metallic reflection plate 8 is the same with the lateral dimension of antenna.
Based on above-described embodiment, one of key technology means of the present invention are to have introduced circular hole 10, circular hole 11, circular hole 13 and circular hole 14.Described circular hole 10 and the diameter of circular hole 11 are all greater than two through-hole diameter sizes on top dielectric plate 1, and two through-hole diameters size on top dielectric plate 1 and probe 4 and probe 5 is the same.Described circular hole 13 and the diameter of circular hole 14 are the same with two through-hole diameters sizes on layer dielectric plate 7, and two through-hole diameters on layer dielectric plate 7 are big or small the same with coaxial probe outer conductor diameter.Such structure makes directly not connect between probe 4 and probe 5, makes the path of the electric current flowing to through each probe be not easy to change direction, thus the polarization purity while having improved each port feed.
Shown in figure 2, the orthogonal thereto state of E type groove of the E type paster 3 of the E type paster 2 of fluting direction-45 ° and fluting direction+45 °, its objective is that the polarised direction that each port is produced is vertical.The length of adjustment tank can be improved the beamwidth of antenna and increase cross polarization isolation.The E shape paster 3 of the E shape paster 2 based on aforementioned mentioned fluting direction-45 ° and fluting direction+45 °, the execution mode being more preferably is that the rectangular strip in the middle of them is blocked to sub-fraction, be used for reducing current path, two are truncated the in different size of part, can be optimized for the impedance matching of each port.Further, the E shape paster 3 of the E shape paster 2 of fluting direction-45 based on aforesaid mentioned ° and fluting direction+45 °, each E type paster surrounding all by etc. big or small corner cut, be used for reducing size, it is in different size that but the corner cut of E shape paster 2 is compared with the corner cut of E shape paster 3, also can be optimized for the impedance matching of each port.
Based on the above embodiment of the present invention, further preferred technical scheme is to introduce circular patch 9, this is equivalent to loading capacitance, reduce the resonance frequency of antenna, make in the situation that need not increasing aerial radiation patch size, to make the working frequency range of antenna move toward low frequency, thereby reduced the size of antenna.Because antenna structure is asymmetric, the center of circular patch does not need to aim at the center of antenna yet, can adjust its position and improve the cross polarization characteristics of Antenna Impedance Matching and antenna.
Shown in figure 3, the embodiment that the present invention is more preferably for technical solution problem is on above-mentioned basis, because probe 4 is to be connected with the E type paster 2 of fluting direction-45 °, so can be directly in the 1 upper surface welding of top dielectric plate, but probe 5 is to be connected with the E type paster 3 of fluting direction+45 °, to weld at the lower surface of top dielectric plate 1, because the too thin difficulty of processing that makes of antenna is somewhat large, for addressing this problem, probe 5 can be by metallization via hole 12 in the upper surface welding of top dielectric plate 1, and its pad can not be connected with the E type paster 2 of fluting direction-45 °, thereby probe 5 is connected with the E shape paster 3 of fluting direction+45 °, this makes the processing of antenna become simple.
Antenna running is: when the dual polarization E type paster antenna with parasitic disk is in the time that+45 degree polarize port feed, when microwave signal is entered by probe 5, electric current transmits by a fluting direction+45 ° E type paster 3, electric current is along E type groove Flow Structure Nearby, and its Energy Coupling is to fluting direction-45 ° E type paster 2 and circular patch 9.Fluting direction-45 ° E type paster 2 and circular patch 9 have formed a distributed circuit circuit, and they provide inductance capacitance component, have reduced the resonance frequency of antenna.The effect of metal floor 8 is the energy that reduce backward radiation, and while making antenna work, most of energy is all to previous irradiation.
The present inventor is in its experimentation, design based on inventive concept with the dual polarization E type patch antenna element return loss measured result of parasitic disk and the contrast of simulation result with reference to shown in figure 6, can be found out in return loss lower than-15dB in the situation that by simulation result, port one actual measurement relative bandwidth is 7.7%(2.48GHz-2.69GHz), it is 7.7%(2.48GHz-2.69GHz that port 2 is surveyed relative bandwidth).Measured result and simulation result coincide better.
Further, the actual measurement isolation of dual polarization E type patch antenna element two-port with parasitic disk of designing based on thought of the present invention and the contrast of simulation result are with reference to shown in figure 7.Can be found out by measured result, in the whole frequency range of 2.5GHz-2.69GHz, isolation is lower than-30dB.Measured result and simulation result coincide better.
When the dual polarization E type paster antenna with parasitic disk is in the time that+45 degree polarize port feed, the directional diagram recording at centre frequency 2.6GHz, with reference to shown in figure 8, comprises E face main pole, the cross polarization of E face, H face main pole and the cross polarization of H face.Can be found out by directional diagram, the cross polarization level of E face and H face in normal direction all lower than-25dB.
When the dual polarization E type paster antenna with parasitic disk is in the time that-45 degree polarize port feed, the directional diagram recording at centre frequency 2.6GHz, with reference to shown in figure 9, comprises E face main pole, the cross polarization of E face, H face main pole and the cross polarization of H face.Can be found out by directional diagram, the cross polarization level of E face and H face in normal direction all lower than-30dB.
Further, Figure 10 is respectively at the dual polarization E type paster antenna with parasitic disk during at+45 degree and-45 ° of polarization port feeds, at 2.5GHz to the gain of the scope internal antenna of 2.7GHz and efficiency the change curve with frequency.Can be found out by curve, the gain of antenna within the scope of whole working band is at 6.8-7.4dBi, and efficiency is all higher than 78%.
Also it should be noted that, " embodiment ", " another embodiment ", " embodiment " that spoken of in this manual, etc., refer to specific features, structure or the feature described in conjunction with this embodiment and be included at least one embodiment that the application's generality describes.In specification, multiple local appearance statement of the same race is not necessarily to refer to same embodiment.Furthermore, while describing a specific features, structure or feature in conjunction with arbitrary embodiment, what advocate is to realize this feature, structure or feature in conjunction with other embodiment also to fall within the scope of the invention.
Although with reference to multiple explanatory embodiment of the present invention, invention has been described here, but, should be appreciated that, those skilled in the art can design a lot of other amendment and execution modes, within these amendments and execution mode will drop on the disclosed principle scope and spirit of the application.More particularly, in the scope of, accompanying drawing open in the application and claim, can carry out multiple modification and improvement to the building block of subject combination layout and/or layout.Except modification that building block and/or layout are carried out with improving, to those skilled in the art, other purposes will be also obvious.
Claims (4)
1. the high isolation dual polarized E type microstrip antenna with parasitic disk, comprise top dielectric plate (1) and layer dielectric plate (7), described top dielectric plate (1) is supported and is placed in the top of layer dielectric plate (7) by least three plastics screws (6); It is characterized in that: two surfaces up and down of described top dielectric plate (1) are printed on respectively the E shape paster (3) of the E shape paster (2) of fluting direction-45 ° and fluting direction+45 °, the upper surface of layer dielectric plate (7) is printed on circular patch (9), lower surface all covers copper as metallic reflection plate (8), the E shape paster (2) of described fluting direction-45 ° is connected with probe (4), and the E shape paster (2) of fluting direction-45 ° is by keeping gap between circular hole (14) own and probe (5); Similarly, the E shape paster (3) of described fluting direction+45 ° is connected with probe (5), and the E shape paster (3) of fluting direction+45 ° is by keeping gap between circular hole (13) own and probe (4), probe (5) welds in the upper surface of top dielectric plate by metallization via hole (12), realize being connected of E shape paster (2) of probe (5) and fluting direction-45 °, described circular patch makes all to keep gap between it and probe (4) and probe (5) by the circular hole above it (10) and circular hole (11).
2. a kind of high isolation dual polarized E type microstrip antenna with parasitic disk according to claim 1, it is characterized in that by introduce circular hole (13) and circular hole (14) by the E shape paster (3) of the E shape paster (2) of described fluting direction-45 ° and direction+45 ° of slotting simultaneously for microstrip antenna, realized dual polarization and obtained high-isolation.
3. a kind of high isolation dual polarized E type microstrip antenna with parasitic disk according to claim 1, it is characterized in that loading circular patch (9) by introducing circular hole (10) and circular hole (11), realize capacitive load, reduce the resonance frequency of antenna, in the situation that ensureing the beamwidth of antenna, reduced antenna size.
4. a kind of high isolation dual polarized E type microstrip antenna with parasitic disk according to claim 2, the rectangular strip of centre of E shape paster (3) of the E shape paster (2) of direction-45 ° and fluting direction+45 ° of it is characterized in that slotting is all truncated sub-fraction, be used for reducing current path, having made up increases the length of E type groove and makes the long shortcoming of current path, has further optimized isolation between antenna two feed port and the bandwidth of antenna.
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| WO2021251735A1 (en) * | 2020-06-08 | 2021-12-16 | 삼성전자 주식회사 | Antenna structure and electronic device comprising same |
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