CN102856420A - Amorphous silicon solar cell with multiple transversely distributed adsorption layers - Google Patents
Amorphous silicon solar cell with multiple transversely distributed adsorption layers Download PDFInfo
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Abstract
The invention discloses an amorphous silicon solar cell with a plurality of transversely distributed adsorption layers, belongs to the technical field of solar energy utilization and relates to an amorphous silicon solar cell structure. The amorphous silicon solar cell with a plurality of transversely distributed adsorption layers, which is provided by the invention, is of a structure that a plurality of unijunction amorphous silicon solar subcells are connected in parallel; amorphous silicon light adsorption layers of each subcell are distributed side by side along the transverse direction and the widths of the amorphous silicon light adsorption layers are sequentially increased or decreased; and meanwhile, a spectrum dividing system is adopted to divide the sunlight into a plurality of parts with different wavelengths and a plurality of parts are respectively projected to the subcells matched with the wavelengths of incident light of the parts. According to the invention, the solar spectrum utilization rate of the amorphous silicon solar cell can be further improved, the solar conversion efficiency is improved, the light-induced degradation effect is also reduced and the influence of N-P reversed junctions is eliminated.
Description
Technical field
The invention belongs to technical field of solar utilization technique, relate to the non-crystal silicon solar cell structure, especially a kind of non-crystal silicon solar cell structure of many absorbed layers.
Background technology
Along with oil, the day by day exhaustion of the non-renewable resources such as natural gas, solar energy becomes human direction of making great efforts as a kind of inexhaustible resource.Main silica-based solar cell is mainly monocrystaline silicon solar cell at present, polysilicon solar cell and non-crystal silicon solar cell, wherein, non-crystal silicon solar cell is compared with polysilicon solar cell with monocrystalline silicon, on manufacturing process, greatly simplify, greatly reduce in material consumption and electric energy consumption, thereby become the focus of silica-based solar cell.
The structure of non-crystal silicon solar cell is constantly overcoming developing defective through a series of development.What propose at first is the amorphous silicon unijunction solar cell; its structure as shown in Figure 1; comprise from top to bottom that the transparent glass substrate 1(that stacks gradually plays the substrate supports effect and to the protective effect of understructure); TCO nesa coating 2(consists of the both positive and negative polarity of battery with metal electrode); p type semiconductor layer 3(consists of the internal electric field of solar cell with n type semiconductor layer); the effect of resilient coating 4(resilient coating is the increase that reduces the series resistance that semiconductor layer and light absorbing zone bring owing to lattice mismatch); amorphous silicon light absorbing zone 5(absorbs solar energy and produces the photoproduction non equilibrium carrier); n type semiconductor layer 6, metal electrode 7.Wherein light absorbing zone is as the generation layer of non equilibrium carrier, and p type semiconductor layer 3 and n type semiconductor layer 6 carry out the collection of non equilibrium carrier for battery provides internal electric field.
The unijunction non-crystal silicon solar cell, because the optical band gap width of amorphous silicon light absorbing zone is (being about 1.7ev) fixed, absorbing wavelength that therefore can only be single is 0.3 ~ 0.75 micron visible light wave range, spectrum utilization factor is lower.Simultaneously, the unijunction non-crystal silicon solar cell is in order to increase as far as possible the solar energy conversion efficiency, the amorphous silicon light absorbing zone need to be done very thickly, but thicker amorphous silicon light absorbing zone has increased the unsteadiness of battery on the contrary, namely there is so-called S-W effect (light is to attenuating effect), this can cause the unijunction non-crystal silicon solar cell along with the increase of light application time, and the solar energy conversion efficiency can reduce 10%-20%.Therefore, widening non-crystal silicon solar cell to the response range of spectrum, reduce the S-W effect, is the inexorable trend of non-crystal silicon solar cell development.
In order to widen non-crystal silicon solar cell to the response range of spectrum, reduce the S-W effect, people have proposed the lamination non-crystal silicon solar cell on the basis of unijunction non-crystal silicon solar cell.Lamination non-crystal silicon solar cell, its structure comprise the transparent glass substrate 1 that stacks gradually as shown in Figure 2 from top to bottom, TCO nesa coating 2, the first p type semiconductor layer 3, the first resilient coatings 4, the first amorphous silicon light absorbing zones 5, the first n type semiconductor layer 6, the second p type semiconductor layer 7, the second resilient coatings 8, the second amorphous silicon light absorbing zones 9, the second n type semiconductor layer 10, metal electrode 11.The lamination non-crystal silicon solar cell is equivalent to the cascaded structure of the sub-battery of unijunction non-crystal silicon solar energy (top battery and end battery) of two pin structures.
The lamination non-crystal silicon solar cell utilizes the film deposition techniques such as PECVD to deposit successively the solar cell of two pin structures.Wherein, the top battery absorbs the larger optical band of energy, and end battery absorbs the less optical band of energy, has expanded the response of spectrum; The simultaneously thinning of its absorbed layer, so that the internal electric field of two sub-batteries increases to some extent, be conducive to like this non equilibrium carrier and from the amorphous silicon light absorbing zone, extract out fast, avoided the recombination losses of charge carrier, thereby be conducive to improve the solar energy conversion efficiency and reduce the S-W effect.
But the lamination non-crystal silicon solar cell has brought some new problems immediately, affects the conversion efficiency of battery.Because two sub-batteries are connected mutually, the electric current of two sub-batteries of flowing through must equate, the minimum current that namely produces in two sub-batteries is the electric current of final output, so must regulate the thickness of top battery or end battery amorphous silicon light absorbing zone, the electric current of two sub-batteries is complementary, could obtains preferably conversion efficiency.As not considering thickness, then top battery and end battery all can become restrictive condition, thereby affect the conversion efficiency of battery.In addition, in the lamination non-crystal silicon solar cell, the p type semiconductor layer (the second p type semiconductor layer) of the n type semiconductor layer of top battery (i.e. the first n type semiconductor layer 6) and end battery is in contact with one another, form a N-P reverse junction, can make the electron accumulation of top battery in the first amorphous silicon light absorbing zone 5, and the hole of end battery is accumulated in the second amorphous silicon light absorbing zone 9, can increase like this recombination rate of non equilibrium carrier, and the conversion efficiency of solar cell is reduced.
The problem of bringing in order to solve laminated cell need to be from the thickness of first and second amorphous silicon light absorbing zone of technique control, so that the electric current of two sub-batteries is complementary; Select simultaneously different materials to make the first n type semiconductor layer 6 and the second p type semiconductor layer, to reduce the impact of N-P reverse junction.Yet will increase technology difficulty and complexity so undoubtedly, also can't eliminate the impact of N-P reverse junction simultaneously fully.
Summary of the invention
In order further to improve the solar spectral utilance of non-crystal silicon solar cell, improve the solar energy conversion efficiency, reduce simultaneously light to attenuating effect, eliminate the impact of N-P reverse junction, the invention provides a kind of non-crystal silicon solar cell of many absorbed layers cross direction profiles.
Technical solution of the present invention is as follows:
A kind of non-crystal silicon solar cell of many absorbed layers cross direction profiles, its structure comprise comprising from top to bottom the transparent glass substrate 2 that stacks gradually as shown in Figure 3, TCO nesa coating 3, p type semiconductor layer 4, resilient coating 5, amorphous silicon light absorbing zone 6, n type semiconductor layer 7, metal electrode 8.The amorphous silicon light absorption sublayer that wherein said amorphous silicon light absorbing zone 6 is increased successively or reduced by a plurality of optical band gap width laterally distributes side by side and forms, and a plurality of amorphous silicon light absorption sublayer that laterally distributes side by side consists of the non-crystal silicon solar cell of a plurality of sub-cell parallels with other layers structure.Also have a minute spectroscopic system 1 above transparent glass substrate 2, spectroscopic system 1 was divided into the different many parts of wavelength with sunlight in described minute, projected respectively on the sub-battery that is complementary with this part lambda1-wavelength.
The non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, wherein a plurality of amorphous silicon light absorption sublayer has identical thickness, and optical band gap width different between a plurality of amorphous silicon light absorption sublayer are achieved by mixing in amorphous silicon material.Concrete doped chemical is Ge, C, N, Cl or F, and optical band gap width different between a plurality of amorphous silicon light absorption sublayer can be achieved by different doped chemicals, also can be achieved by the different doping of same doped chemical.
The non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention has following effect:
1, the non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, the parallel-connection structure that is equivalent to a plurality of unijunction non-crystal silicon solar cells, the output current of whole battery is the electric current stack of each sub-battery, so there is not the sub-battery current matching problem of lamination non-crystal silicon solar cell.
2, the non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, there is not the reverse PN junction in the lamination non-crystal silicon solar cell, therefore reduced in compound this unfavorable factor of the non equilibrium carrier of amorphous silicon light absorbing zone, thereby be conducive to improve the solar energy conversion efficiency.
3, the non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, wherein between the sub-battery of a plurality of parallel-connection structures because the difference of amorphous silicon light absorbing zone optical energy gap, make its corresponding sunlight that absorbs different wavelength range, so that the spectrum utilization factor of sunlight improves greatly.
4, in addition, the non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, wherein be achieved owing to not being both by different doped chemicals or different dopings of amorphous silicon light absorbing zone optical energy gap between the sub-battery of a plurality of parallel-connection structures, can make in the lower scope of absorbed layer defect state density so H content in the amorphous silicon light absorbing zone can be controlled at, thereby reduce simultaneously light to attenuating effect, so that the stability of battery is strengthened.
Description of drawings
Fig. 1 is the unijunction non-crystal silicon solar cell structural representation of prior art.Wherein 1 is transparent glass substrate, the 2nd, TCO nesa coating, the 3rd, p type semiconductor layer, the 4th, resilient coating, the 5th, amorphous silicon light absorbing zone, the 6th, n type semiconductor layer 6,7th, metal electrode.
Fig. 2 is the battery structure schematic diagram of the lamination non-crystal silicon solar energy of prior art.Wherein 1 is transparent glass substrate 1, the 2nd, TCO nesa coating, 3 is that the first p type semiconductor layer 3,4 is first resilient coatings, and 5 is first amorphous silicon light absorbing zones, 6 is first n type semiconductor layers, 7 is that the second p type semiconductor layer 7,8 is second resilient coatings, and 9 is second amorphous silicon light absorbing zones, 10 is second n type semiconductor layers, the 11st, and metal electrode.
Fig. 3 is the non-crystal silicon solar cell structural representation of many absorbed layers cross direction profiles provided by the invention.Wherein 1 is a minute spectroscopic system, the 2nd, and transparent glass substrate, the 3rd, TCO nesa coating, the 4th, p type semiconductor layer, the 5th, resilient coating, the 6th, amorphous silicon light absorbing zone, the 7th, n type semiconductor layer, the 8th, metal electrode.
Fig. 4 amorphous silicon absorbed layer of the invention process is the absorption light intensity of cross direction profiles (four knot cell parallels) and the simulation result of lambda1-wavelength relation.Wherein curve 1 is the absorption light intensity of sub-battery 1 and the relation of lambda1-wavelength, curve 2 is the absorption light intensity of sub-battery 2 and the relation of lambda1-wavelength, curve 3 is the absorption light intensity of sub-battery 3 and the relation of lambda1-wavelength, curve 4 is the absorption light intensity of sub-battery 4 and the relation of lambda1-wavelength, and curve 5 is the total absorption light intensity of four sub-batteries and the relation of lambda1-wavelength.
Embodiment
A kind of non-crystal silicon solar cell of many absorbed layers cross direction profiles, its structure comprise comprising from top to bottom the transparent glass substrate 2 that stacks gradually as shown in Figure 3, TCO nesa coating 3, p type semiconductor layer 4, resilient coating 5, amorphous silicon light absorbing zone 6, n type semiconductor layer 7, metal electrode 8.The amorphous silicon light absorption sublayer that wherein said amorphous silicon light absorbing zone 6 is increased successively or reduced by a plurality of optical band gap width laterally distributes side by side and forms, and a plurality of amorphous silicon light absorption sublayer that laterally distributes side by side consists of the non-crystal silicon solar cell of a plurality of sub-cell parallels with other layers structure.Also have a minute spectroscopic system 1 above transparent glass substrate 2, spectroscopic system 1 was divided into the different many parts of wavelength with sunlight in described minute, projected respectively on the sub-battery that is complementary with this part lambda1-wavelength.
The non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, wherein a plurality of amorphous silicon light absorption sublayer has identical thickness, and optical band gap width different between a plurality of amorphous silicon light absorption sublayer are achieved by mixing in amorphous silicon material.Concrete doped chemical is Ge, C, N, Cl or F, and optical band gap width different between a plurality of amorphous silicon light absorption sublayer can be achieved by different doped chemicals, also can be achieved by the different doping of same doped chemical.
In the non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention, the thickness of amorphous silicon light absorbing zone should suffer restraints: (1) absorbed layer is too thick, can increase the series resistance of whole solar cell, causes battery efficiency to descend.(2) absorbed layer is too thin, and light can not absorb in absorbed layer fully, is not enough to produce enough non equilibrium carriers.
As shown in Figure 4, emulation of the present invention a kind of absorption of each sub-battery light intensity of non-crystal silicon solar cell (as shown in Figure 3) of the many absorbed layers cross direction profiles by the parallel connection of four unijunction non-crystal silicon solar cells and the corresponding relation of lambda1-wavelength.The amorphous silicon light absorbing zone thickness of four unijunction non-crystal silicon solar cells is L=140um, and optical energy gap is respectively Eg
1=1.3ev, Eg
2=2.0ev, Eg
3=2.5ev, Eg
4=3.2ev, the simulated solar optical wavelength range is 200-2200nm.Wherein curve 1 is the absorption light intensity of sub-battery 1 and the relation of lambda1-wavelength, curve 2 is the absorption light intensity of sub-battery 2 and the relation of lambda1-wavelength, curve 3 is the absorption light intensity of sub-battery 3 and the relation of lambda1-wavelength, curve 4 is the absorption light intensity of sub-battery 4 and the relation of lambda1-wavelength, and curve 5 is the total absorption light intensity of four sub-batteries and the relation of lambda1-wavelength.Can be seen by Fig. 4, the non-crystal silicon solar cell of many absorbed layers cross direction profiles provided by the invention has been widened the scope of battery absorption spectrum, has improved the utilance to spectrum, and total absorption intensity is strengthened.
Claims (5)
1. the non-crystal silicon solar cell of absorbed layer cross direction profiles more than a kind, its structure comprises and comprises from top to bottom the transparent glass substrate (2) that stacks gradually, TCO nesa coating (3), p type semiconductor layer (4), resilient coating (5), amorphous silicon light absorbing zone (6), n type semiconductor layer (7), metal electrode (8); The amorphous silicon light absorption sublayer that wherein said amorphous silicon light absorbing zone (6) is increased successively or reduced by a plurality of optical band gap width laterally distributes side by side and forms, and a plurality of amorphous silicon light absorption sublayer that laterally distributes side by side consists of the non-crystal silicon solar cell of a plurality of sub-cell parallels with other layers structure; Also have a minute spectroscopic system (1) in the top of transparent glass substrate (2), described minute spectroscopic system (1) sunlight is divided into the different many parts of wavelength, project respectively on the sub-battery that is complementary with this part lambda1-wavelength.
2. the non-crystal silicon solar cell of many absorbed layers cross direction profiles according to claim 1, it is characterized in that, described a plurality of amorphous silicon light absorption sublayer has identical thickness, and optical band gap width different between a plurality of amorphous silicon light absorption sublayer are achieved by mixing in amorphous silicon material.
3. the non-crystal silicon solar cell of many absorbed layers cross direction profiles according to claim 2 is characterized in that, the doped chemical of mixing in amorphous silicon material is Ge, C, N, Cl or F.
4. the non-crystal silicon solar cell of many absorbed layers cross direction profiles according to claim 3 is characterized in that, different optical band gap width is achieved by different doped chemicals between a plurality of amorphous silicon light absorption sublayer.
5. the non-crystal silicon solar cell of many absorbed layers cross direction profiles according to claim 3 is characterized in that, optical band gap width different between a plurality of amorphous silicon light absorption sublayer are achieved by the different doping of same doped chemical.
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Cited By (4)
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| CN103715282A (en) * | 2013-12-10 | 2014-04-09 | 西安石油大学 | Cu2ZnSnS4 thin-film solar cell, preparation method and photoelectric conversion system thereof |
| CN104022172A (en) * | 2014-05-27 | 2014-09-03 | 南昌大学 | Resonant back reflection shoulder-by-shoulder thin-film photovoltaic cell structure |
| CN108091712A (en) * | 2017-12-27 | 2018-05-29 | 安徽银欣新能源科技有限公司 | A kind of preparation method of solar cell and its chip and the chip |
| CN108281552A (en) * | 2018-03-06 | 2018-07-13 | 电子科技大学 | A kind of perovskite solar cell and preparation method thereof with energy band gradient |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715282A (en) * | 2013-12-10 | 2014-04-09 | 西安石油大学 | Cu2ZnSnS4 thin-film solar cell, preparation method and photoelectric conversion system thereof |
| CN103715282B (en) * | 2013-12-10 | 2015-06-17 | 西安石油大学 | Cu2ZnSnS4 thin-film solar cell, preparation method and photoelectric conversion system thereof |
| CN104022172A (en) * | 2014-05-27 | 2014-09-03 | 南昌大学 | Resonant back reflection shoulder-by-shoulder thin-film photovoltaic cell structure |
| CN108091712A (en) * | 2017-12-27 | 2018-05-29 | 安徽银欣新能源科技有限公司 | A kind of preparation method of solar cell and its chip and the chip |
| CN108281552A (en) * | 2018-03-06 | 2018-07-13 | 电子科技大学 | A kind of perovskite solar cell and preparation method thereof with energy band gradient |
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