CN102856241B - Static chuck and plasma processing equipment - Google Patents
Static chuck and plasma processing equipment Download PDFInfo
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- CN102856241B CN102856241B CN201110175009.2A CN201110175009A CN102856241B CN 102856241 B CN102856241 B CN 102856241B CN 201110175009 A CN201110175009 A CN 201110175009A CN 102856241 B CN102856241 B CN 102856241B
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- electrostatic chuck
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Abstract
The invention provides a static chuck and plasma processing equipment. The static chuck comprises a base for bearing a processed workpiece, wherein the base comprises a fixed unit and an adjustable unit nested on the peripheral edge of the fixed unit; and the upper surface of the adjustable unit is leveled to the upper surface of the fixed unit or is lower than the upper surface of the fixed unit. With the adoption of the static chuck, the time spent on replacing can be reduced, the utilization rate of the plasma processing equipment can be improved, and moreover, the manufacturing cost of the plasma processing equipment can be decreased.
Description
Technical field
The invention belongs to plasma processing device field, relate to a kind of electrostatic chuck and the plasma processing device containing this electrostatic chuck.
Background technology
Plasma processing device is equipment conventional in semiconductor processing technology, and it is for carrying out the technique such as thin film deposition, etching.
Plasma processing device comprises reaction chamber and is arranged on the electrostatic chuck of reaction chamber inside.Electrostatic chuck is used for carrying and fixed wafer.Meanwhile, in order to avoid electrostatic chuck is etched in technical process, electrostatic chuck is used for the diameter being dimensioned slightly smaller than wafer of the upper surface of bearing wafer, is namely covered by electrostatic chuck with wafer.
In the actual course of processing, the size of wafer is not fixed, and conventional wafer size has 2 inches, 4 inches, 6 inches, 8 inches and 12 inches.Therefore, when processing the wafer of different size, need to change electrostatic chuck corresponding with it according to processed wafer size.But the disassembly process difficulty of electrostatic chuck, changes the electrostatic chuck time used longer, it reduces plasma processing device utilization rate; And electrostatic chuck involves great expense, for different size wafer and configure the manufacturing cost that electrostatic chuck corresponding to size with it adds plasma processing device.
Summary of the invention
The technical problem to be solved in the present invention is exactly the above-mentioned defect for existing in plasma processing device, a kind of electrostatic chuck is provided, this electrostatic chuck can adjust according to the size of workpiece to be machined for the size carrying the upper surface of workpiece to be machined, thus the time changing electrostatic chuck can be reduced, and reduce the manufacturing cost of plasma processing device.
In addition, the present invention also provides a kind of plasma processing device, the upper surface of the electrostatic chuck in this plasma processing device can adjust according to the size of workpiece to be machined, thus can reduce the time changing electrostatic chuck, and reduces the manufacturing cost of plasma processing device.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of electrostatic chuck, comprise the pedestal for carrying workpiece to be machined, described pedestal comprises fixed cell and adjustable elements, described adjustable elements is nested in the outer peripheral edges of described fixed cell, the upper surface of described adjustable elements can with the upper surface flush of described fixed cell or the upper surface lower than described fixed cell; Described electrostatic chuck also comprises protecting component, and when upper surface lower than described fixed cell of the upper surface of described adjustable elements, described protecting component is placed on the upper surface of described adjustable elements.
Preferably, described adjustable elements comprises n adjustable member and drives the driver part of adjustable member described in each respectively, a described n adjustable member is from the close-by examples to those far off nested in the outer peripheral edges of described fixed cell successively from described fixed cell, under the driving of described driver part, the upper surface of described adjustable member corresponding with it and the upper surface flush of described fixed cell or the upper surface lower than described fixed cell, wherein, n be equal to or greater than 1 integer.
Preferably, a described n adjustable member is annular structural part, is greater than the outside dimension of described fixed cell with the internal diameter size of the immediate described adjustable member of described fixed cell.
Preferably, described fixed cell is cylindrical structure, the annulus that a described n adjustable member is is symmetry axis with the symmetry axis of described fixed cell.
Preferably, described driver part is cylinder or hydraulic cylinder.
Preferably, described in each, the inside of adjustable member is equipped with passage, described passage is connected with the medium source of storage temperature conditioning agent, described in each, be equipped with a control unit between passage and described medium source, and described control unit is for controlling the flow of the temperature regulato in described passage.
Preferably, described temperature regulato is water or inert gas.
Preferably, described protecting component is the structural member be made up of quartz or ceramic material.
In addition, the present invention also provides a kind of plasma processing device, comprises reaction chamber and electrostatic chuck, and described electrostatic chuck is arranged on the inside of described reaction chamber, described electrostatic chuck described electrostatic chuck provided by the invention.
The present invention has following beneficial effect:
A kind of electrostatic chuck provided by the invention, the pedestal of this electrostatic chuck comprises fixed cell and adjustable elements, and the upper surface of described adjustable elements can with the upper surface flush of described fixed cell or the upper surface lower than described fixed cell, the base size of described electrostatic chuck can be made to meet the requirement of the workpiece to be machined of different size by regulating the height of adjustable elements upper surface.This can reduce the time changing electrostatic chuck, improves the utilization rate of plasma processing device.And owing to arranging the electrostatic chuck of multiple different size accordingly without the need to the workpiece to be machined according to different size, therefore, this electrostatic chuck can also reduce the manufacturing cost of plasma processing device.
Similarly, plasma processing device provided by the invention, pedestal due to electrostatic chuck comprises fixed cell and adjustable elements, and the upper surface of described adjustable elements can with the upper surface flush of described fixed cell or the upper surface lower than described fixed cell, the base size of described electrostatic chuck can be made to meet the requirement of the workpiece to be machined of different size by regulating the height of adjustable elements upper surface.This can reduce the time changing electrostatic chuck, improves the utilization rate of plasma processing device.And, owing to arranging the electrostatic chuck of multiple different size accordingly without the need to the workpiece to be machined according to different size, therefore, the low cost of manufacture of this plasma processing device.
Accompanying drawing explanation
Fig. 1 is the structure diagram of embodiment electrostatic chuck provided by the invention;
Fig. 2 is the structure diagram of variant embodiment electrostatic chuck provided by the invention; And
Fig. 3 is the structure diagram of plasma processing device provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, electrostatic chuck provided by the invention and plasma processing device are described in detail.
Fig. 1 is embodiment electrostatic chuck structure diagram provided by the invention.Refer to Fig. 1, electrostatic chuck comprises the pedestal for carrying workpiece to be machined, and pedestal comprises fixed cell 11 and adjustable elements 12, and fixed cell 11 is cylinder, and adjustable elements 12 is nested in the outer peripheral edges of fixed cell 11.
Adjustable elements 12 comprises the bottom that adjustable member 121 and two cylinders, 122, two cylinders 122 are arranged on adjustable member 121.Under the driving of two cylinders 122, the upper plane of adjustable member 121 can with the upper surface flush of fixed cell 11 or the upper surface lower than fixed cell 11.Certainly, cylinder 122 also can replace with other driver parts such as such as hydraulic cylinders.
It should be noted that, the quantity of cylinder 122 is not limited only to two, also can one or more be set, as long as can regulate the height of adjustable member 121, make the upper plane of adjustable member 121 with can the upper surface flush of fixed cell 11 or the upper surface lower than fixed cell 11.
Adjustable member 121 is cirque structure, and its internal diameter is slightly larger than the external diameter of fixed cell 11.Adjustable member 121 is nested in the periphery of fixed cell 11, that is, after adjustable member 121 and fixed cell 11 being assembled together, adjustable member 121 and fixed cell 11 form a concentric structure.
Be provided with electrostatic attraction electrode (not shown) in the inside of adjustable member 121 and fixed cell 11 and near the position of upper surface, electrostatic attraction electrode is connected with power supply.After electrostatic attraction electrode is connected with power electric, between pedestal and workpiece to be machined, just produce electrostatic attraction, workpiece to be machined can be fixed on the surface of pedestal by this electrostatic attraction.The feature such as set-up mode, structure of electrostatic attraction electrode is identical with prior art, is no longer described in detail here.
Also be provided with passage (not shown) in adjustable member 121 and fixed cell 11 inside, passage is connected with the medium source (not shown) of storage temperature conditioning agent by pipeline.Temperature regulato can regulate the temperature of adjustable member 121 and fixed cell 11, thus reaches the control temperature of workpiece to be machined and the object of temperature homogeneity.
In the present embodiment, a control unit is respectively equipped with between passage in adjustable member 121 and fixed cell 11 and medium source, control unit is used for the flow of temperature regulato in control channel, thus reach the independent object controlling adjustable member 121 and fixed cell 11 temperature, more easily can control the temperature of workpiece to be machined and the uniformity of temperature like this.
In the present embodiment, temperature regulato can be water or inert gas, and accordingly, medium source can be water source or inert gas source.
When size slightly larger than fixed cell 11 upper surface of the size of workpiece to be machined, workpiece to be machined is placed on the surface of fixed cell 11, and it can not cover adjustable member 121.In implementing process process, etching will inevitably be caused to adjustable member 121.In order to avoid the surface of adjustable member 121 is etched, first adjusting cylinders makes the upper surface of upper surface lower than fixed cell of adjustable elements 12, then protecting component 13 is set at the upper surface of adjustable member 121, by protecting component 13, exposed adjustable member 121 is in the plasma blocked.The shape of protecting component 13 is corresponding with the upper surface shape of adjustable member 121.Protecting component 13 is the structural members be made up of quartz or ceramic material.
As a modification of above-described embodiment, as shown in Figure 2, adjustable elements 12 is provided with adjustable member 121 and four cylinders of two annulars.Wherein, the internal diameter of the second adjustable member 121b is slightly larger than the external diameter of the first adjustable member 121a, and the second adjustable member 121b is nested in the outer peripheral edges of the first adjustable member 121a.The internal diameter of the first adjustable member 121a is slightly larger than the external diameter of fixed cell 11, and the first adjustable member 121a is nested in the outer peripheral edges of fixed cell 11.Like this, fixed cell 11, first adjustable member 121a and the second adjustable member 121b forms concentric structure.
First adjustable member 121a and the second adjustable member 121b is driven by two cylinders respectively, with the upper surface flush of the upper surface and fixed cell 11 that make the first adjustable member 121a and the second adjustable member 121b; Or, make the upper surface of the first adjustable member 121a and the upper surface flush of fixed cell 11, and the upper surface of the second adjustable member 121b is lower than the upper surface of fixed cell 11.
Be understood that, adjustable elements 12 can comprise n adjustable member 121, and each adjustable member 121 is driven by the cylinder corresponding with it or other driver part respectively, wherein, n be equal to or greater than 1 integer.This n adjustable member 121 self-retaining unit 11 is from the close-by examples to those far off nested in the outer peripheral edges of described fixed cell 111 successively.Particularly, be greater than the outside dimension of fixed cell 11 with the internal diameter size of the immediate adjustable member of fixed cell 11, and in this n adjustable member, the outside dimension of arbitrary adjustable member is less than the internal diameter size of the adjustable member be adjacent.In other words, in adjacent two adjustable member, the outside dimension near the adjustable member of fixed cell 11 is less than the internal diameter size of the adjustable member away from fixed cell 11.Under the driving of cylinder, the upper surface of described adjustable member 121 corresponding with it and the upper surface flush of fixed cell 11 or the upper surface lower than described fixed cell 11.
And the external diameter of n adjustable member 121 is corresponding with the external diameter of the workpiece to be machined of different size, more specifically, the external diameter of n adjustable member 121 is slightly less than the external diameter of the workpiece to be machined of different size.During use, make the corresponding adjustable member of size with it according to the size of workpiece to be machined and be positioned at other adjustable member rise inside this adjustable member, and make this adjustable member and be positioned at the upper surface of other adjustable member inside this adjustable member and the upper surface flush of fixed cell; Meanwhile, make the upper surface of upper surface lower than fixed cell of other adjustable member be positioned at outside this adjustable member, and cover the upper surface lower than the adjustable member of fixed cell upper surface with protecting component.
It should be noted that, in the above-described embodiments, adjustable member 121 is complete annulus, but the present invention is not limited thereto, adjustable member 121 also can be the annulus be spliced by a few part, if adjustable member 121 can be spliced by two semicircular ring, or be spliced by four annulus sections.
Also it should be noted that, in the above-described embodiments, fixed cell 11 is cylinder, but the present invention is not limited thereto, and fixed cell 11 also can be other column structure such as such as cuboid or square etc.Accordingly, the adjustable member 121 of adjustable elements 12 also can be rectangular annular or the loop configuration of pros.That is, the shape of adjustable member 121 adjusts according to the shape of fixed cell 11, as long as fixed cell 11 and adjustable member 121 can be made to nest together.
A kind of electrostatic chuck that the present embodiment provides, its pedestal comprises fixed cell and adjustable elements, and the upper surface of described adjustable elements can with the upper surface flush of described fixed cell or the upper surface lower than described fixed cell, the base size of described electrostatic chuck can be made to meet the requirement of the workpiece to be machined of different size by regulating the height of adjustable elements upper surface.This can reduce the time changing electrostatic chuck, improves the utilization rate of plasma processing device.And owing to arranging the electrostatic chuck of multiple different size accordingly without the need to the workpiece to be machined according to different size, therefore, this electrostatic chuck can reduce the manufacturing cost of plasma processing device.
The present embodiment also provides a kind of plasma processing device, the structure diagram of Fig. 3 plasma processing device provided by the invention.As shown in Figure 3, plasma processing device comprises cavity 31.Liner 32 is provided with, to avoid cavity 31 by plasma etching in the inner side of cavity 31.Be provided with forms 33 on the top of cavity 31, forms 33 are made up of electrical insulating material.Cavity 31 and forms 33 constitute reaction chamber 40.
Be provided with central air induction mouth 35 in the centre position of forms 33, the position near forms 33 on cavity 31 is provided with edge air inlet 36.By central air induction mouth 35 and edge air inlet 36, process gas is passed in reaction chamber 40.
Radio-frequency drive device 34 is provided with at the upper surface of forms 33, radio-frequency drive device 34 is connected with radio-frequency power supply (not shown), radio-frequency drive device 34 can make the energy of radio-frequency power supply be coupled in reaction chamber 40 by forms 33, process gas is ionized and forms plasma.
In the side of cavity 31 and upper position is provided with exhaust outlet 37, exhaust outlet 37 is connected with vacuum plant (not shown), makes reaction chamber 40 become vacuum environment by vacuum plant.
Be provided with electrostatic chuck 38 in the bottom of reaction chamber 40, workpiece to be machined 39 is placed on the upper surface of electrostatic chuck 38.Electrostatic chuck 38 for carrying and fixing workpiece to be machined 39, simultaneously also for regulating the temperature of workpiece to be machined 39.
In the present embodiment, electrostatic chuck 38 adopts above-described embodiment to provide electrostatic chuck, pedestal due to electrostatic chuck comprises fixed cell and adjustable elements, and the upper surface of described adjustable elements can with the upper surface flush of described fixed cell or the upper surface lower than described fixed cell, the base size of described electrostatic chuck can be made to meet the requirement of the workpiece to be machined of different size by regulating the height of adjustable elements upper surface.This can reduce the time changing electrostatic chuck, improves the utilization rate of plasma processing device.And, owing to arranging the electrostatic chuck of multiple different size accordingly without the need to the workpiece to be machined according to different size, therefore, the low cost of manufacture of this plasma processing device.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (9)
1. an electrostatic chuck, comprise the pedestal for carrying workpiece to be machined, it is characterized in that, described pedestal comprises fixed cell and adjustable elements, described adjustable elements is nested in the outer peripheral edges of described fixed cell, the upper surface of described adjustable elements can with the upper surface flush of described fixed cell or the upper surface lower than described fixed cell; Described electrostatic chuck also comprises protecting component, and when upper surface lower than described fixed cell of the upper surface of described adjustable elements, described protecting component is placed on the upper surface of described adjustable elements.
2. electrostatic chuck according to claim 1, it is characterized in that, described adjustable elements comprises n adjustable member and drives the driver part of adjustable member described in each respectively, a described n adjustable member is from the close-by examples to those far off nested in the outer peripheral edges of described fixed cell successively from described fixed cell, under the driving of described driver part, the upper surface of described adjustable member corresponding with it and the upper surface flush of described fixed cell or the upper surface lower than described fixed cell, wherein, n be equal to or greater than 1 integer.
3. electrostatic chuck according to claim 2, it is characterized in that, a described n adjustable member is annular structural part, is greater than the outside dimension of described fixed cell with the internal diameter size of the immediate described adjustable member of described fixed cell.
4. electrostatic chuck according to claim 3, it is characterized in that, described fixed cell is cylindrical structure, the annulus that a described n adjustable member is is symmetry axis with the symmetry axis of described fixed cell.
5. electrostatic chuck according to claim 2, it is characterized in that, described driver part is cylinder or hydraulic cylinder.
6. electrostatic chuck according to claim 2, it is characterized in that, described in each, the inside of adjustable member is equipped with passage, described passage is connected with the medium source of storage temperature conditioning agent, described in each, be equipped with a control unit between passage and described medium source, described control unit is for controlling the flow of the temperature regulato in described passage.
7. electrostatic chuck according to claim 6, it is characterized in that, described temperature regulato is water or inert gas.
8. electrostatic chuck according to claim 1, is characterized in that, described protecting component is the structural member be made up of quartz or ceramic material.
9. a plasma processing device, comprises reaction chamber and electrostatic chuck, and described electrostatic chuck is arranged on the inside of described reaction chamber, it is characterized in that, described electrostatic chuck is electrostatic chuck described in claim 1-8 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110175009.2A CN102856241B (en) | 2011-06-27 | 2011-06-27 | Static chuck and plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110175009.2A CN102856241B (en) | 2011-06-27 | 2011-06-27 | Static chuck and plasma processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN102856241A CN102856241A (en) | 2013-01-02 |
| CN102856241B true CN102856241B (en) | 2015-07-08 |
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| CN201110175009.2A Active CN102856241B (en) | 2011-06-27 | 2011-06-27 | Static chuck and plasma processing equipment |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103996596B (en) * | 2014-05-14 | 2016-03-16 | 京东方科技集团股份有限公司 | A kind of dry etching equipment |
| CN113496934A (en) * | 2020-03-19 | 2021-10-12 | 芯恩（青岛）集成电路有限公司 | Electrostatic chuck and wafer testing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043017A (en) * | 2006-03-24 | 2007-09-26 | 日本碍子株式会社 | Electrostatic chuck |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000001894A (en) * | 1998-06-15 | 2000-01-15 | 윤종용 | Electrostatic chuck for semiconductor device and production method thereof |
| JP2011114178A (en) * | 2009-11-27 | 2011-06-09 | Samco Inc | Plasma processing device and plasma processing method |
| KR101109743B1 (en) * | 2009-12-08 | 2012-02-24 | 이지스코 주식회사 | Large size combination type electrostatic chuck and fabrication method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043017A (en) * | 2006-03-24 | 2007-09-26 | 日本碍子株式会社 | Electrostatic chuck |
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| CN102856241A (en) | 2013-01-02 |
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Address after: 100015 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015, M5 building, No. 1 Jiuxianqiao East Road, Beijing, Chaoyang District, two South Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |