CN102843029A - Direct current-direct current voltage boost circuit - Google Patents
Direct current-direct current voltage boost circuit Download PDFInfo
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- CN102843029A CN102843029A CN201210349199XA CN201210349199A CN102843029A CN 102843029 A CN102843029 A CN 102843029A CN 201210349199X A CN201210349199X A CN 201210349199XA CN 201210349199 A CN201210349199 A CN 201210349199A CN 102843029 A CN102843029 A CN 102843029A
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Abstract
The invention discloses a direct current-direct current voltage boost circuit. The circuit comprises a switch module, a resonant module and a voltage boost module; the switch module is used to switch on or switch off a branch circuit in the direct current-direct current voltage boost circuit by receiving a pulse control signal to control current direction; the resonant module is connected with the switch module, and is used to reduce the energy loss in the direct current-direct current voltage boost circuit; the voltage boost circuit is connected with the switch module and the resonant module, and is used to losslessly absorb and accumulate charging energy for boosting voltage. The technical scheme of the invention can improve voltage boost efficiency.
Description
Technical field
The present invention relates to the circuit engineering field, be specifically related to a kind of booster circuit of DC-to-dc.
Background technology
Small-power non-isolation type photovoltaic combining inverter is owing to be to belong to resident's household products, and therefore, its degree of protection is higher than general business level and uses.Many countries have proposed requirements at the higher level to it to Europe, fail safe aspect, and are special in the boosting efficiency that is incorporated into the power networks.
In the prior art; General booster circuit is as shown in Figure 1, and VT is Metal-oxide-semicondutor (MOS, Metal-Oxide-Semiconductor) pipe; When electric current passes through inductance, diode and electric capacity powering load; Because the switching loss of metal-oxide-semiconductor is little, conduction loss is big, has caused the boosting efficiency of this booster circuit low like this.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of DC-DC voltage boosting circuit, in order to improve boosting efficiency.
The DC-DC voltage boosting circuit that provides in the embodiment of the invention comprises: switch module, resonance modules, boost module; Wherein, said switch module is used for realizing opening or turn-offing of said DC-DC voltage boosting circuit branch road through receiving control wave, moves towards with Control current; Said resonance modules links to each other with said switch module, is used for reducing the energy loss of said DC-DC voltage boosting circuit; Said boost module all links to each other with said switch module, said resonance modules, is used for harmless absorption and accumulation rechargeable energy to boost.
Preferably; Said switch module comprises IGBT pipe and metal-oxide-semiconductor, and wherein, the drain electrode of said metal-oxide-semiconductor links to each other with the positive pole of DC power supply through inductance; The source electrode of said metal-oxide-semiconductor links to each other with the negative pole of said DC power supply, and the emitter of said IGBT pipe links to each other with the negative pole of said DC power supply.
Preferably; Said resonance modules comprises the resonant inductance and first resonant capacitance; Wherein, an end of said resonant inductance links to each other with the drain electrode of said metal-oxide-semiconductor, and the other end of said resonant inductance links to each other with the collector electrode of said IGBT pipe; One end of said first resonant capacitance links to each other with the drain electrode of said metal-oxide-semiconductor, and the other end of said first resonant capacitance links to each other with the source electrode of said metal-oxide-semiconductor.
Preferably, said boost module comprises: first diode, second diode, the 3rd diode and second resonant capacitance;
Wherein, The anode of said first diode links to each other with the collector electrode of said IGBT pipe; The anode of said second diode links to each other with the drain electrode of said metal-oxide-semiconductor, and the anode of said the 3rd diode links to each other with the negative electrode of said first diode, and the negative electrode of said the 3rd diode links to each other with the negative electrode of said second diode; One end of said second resonant capacitance links to each other with the anode of said second diode, and the other end of said second resonant capacitance links to each other with the negative electrode of said first diode.
Preferably, said circuit also comprises electric capacity; Wherein, an end of said electric capacity all links to each other with the negative electrode of the negative electrode of said second diode, said three diodes, and the other end of said electric capacity all links to each other with the emitter of the source electrode of the negative pole of said DC power supply, said metal-oxide-semiconductor, said IGBT pipe.
Preferably, said metal-oxide-semiconductor is specially COOL metal-oxide-semiconductor or silicon carbide mos pipe.
Preferably, said IGBT pipe is specially carborundum IGBT pipe.
Preferably, said first diode is specially silicon carbide diode.
Can find out from above technical scheme; The embodiment of the invention has the following advantages: switch module is realized opening or turn-offing of branch road in the said DC-DC voltage boosting circuit through receiving control wave, just through control the charging and the discharge of different components and parts is come the Control current trend; Resonance modules is used for reducing the energy loss of said DC-DC voltage boosting circuit, improves boosting efficiency; Boost module is through the charge-discharge characteristic of resonant capacitance wherein and the unilateral conduction of diode, realizes that the harmless accumulation rechargeable energy that absorbs also is to boost.
Description of drawings
Fig. 1 is a booster circuit connection layout in the prior art;
Fig. 2 is an embodiment sketch map of the DC-DC voltage boosting circuit in the embodiment of the invention;
Fig. 3 is the annexation sketch map of the DC-DC voltage boosting circuit in the embodiment of the invention;
Fig. 4 is the DC-DC voltage boosting circuit operation sequential sketch map in the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of booster circuit of DC-to-dc.Below be elaborated respectively.
See also Fig. 2, an embodiment sketch map for the booster circuit of the DC-to-dc in the embodiment of the invention comprises:
Wherein, said switch module 101 is used for realizing opening or turn-offing of said DC-DC voltage boosting circuit branch road through receiving control wave, moves towards with Control current;
Said resonance modules 102 links to each other with switch module 101, is used for reducing the energy loss of said DC-DC voltage boosting circuit;
Said boost module 103 all links to each other with switch module 101, resonance modules 102, is used for harmless the absorption and the accumulation rechargeable energy, to boost.Specifically be the charge-discharge characteristic of the resonant capacitance through wherein and the unilateral conduction of diode, realize absorbing and accumulation energy, on the basis of primary voltage, circuit is boosted.
In the embodiment of the invention, switch module 101 is realized opening or turn-offing of branch road in the said DC-DC voltage boosting circuit through receiving control wave, just through control the charging and the discharge of different components and parts is come the Control current trend; Resonance modules 102 is used for reducing the energy loss of said DC-DC voltage boosting circuit, improves boosting efficiency; Boost module 103 is through the wherein charge-discharge characteristic of resonant capacitance and the unilateral conduction of diode, realizes that the harmless accumulation rechargeable energy that absorbs also is to boost.
For ease of understanding; Introduce the DC-DC voltage boosting circuit in the embodiment of the invention in detail with another embodiment below; See also Fig. 3; Annexation sketch map for the DC-DC voltage boosting circuit in the embodiment of the invention comprises: DC power supply (DC), inductance, switch module, resonance modules, boost module and electric capacity.
Wherein, an end of said inductance links to each other with the positive pole of DC power supply, and the other end of said inductance links to each other with said switch module;
Said switch module comprises: insulated gate bipolar transistor (Insulated Gate Bipolar Transistor; IGBT) pipe and metal-oxide-semiconductor; The drain electrode of said metal-oxide-semiconductor links to each other with the positive pole of DC power supply through inductance; The source electrode of said metal-oxide-semiconductor links to each other with the negative pole of said DC power supply, and the emitter of said IGBT pipe links to each other with the negative pole of said DC power supply;
Said resonance modules comprises the resonant inductance and first resonant capacitance; Wherein, One end of said resonant inductance links to each other with the drain electrode of said metal-oxide-semiconductor; The other end of said resonant inductance links to each other with the collector electrode of said IGBT pipe, and an end of said first resonant capacitance links to each other with the drain electrode of said metal-oxide-semiconductor, and the other end of said first resonant capacitance links to each other with the source electrode of said metal-oxide-semiconductor.
Said boost module comprises: first diode, second diode, the 3rd diode and second resonant capacitance; Wherein, The anode of said first diode links to each other with the collector electrode of said IGBT pipe; The anode of said second diode links to each other with the drain electrode of said metal-oxide-semiconductor, and the anode of said the 3rd diode links to each other with the negative electrode of said first diode, and the negative electrode of said the 3rd diode links to each other with the negative electrode of said second diode; One end of said second resonant capacitance links to each other with the anode of said second diode, and the other end of said second resonant capacitance links to each other with the negative electrode of said first diode.
Particularly; The drain electrode of said metal-oxide-semiconductor links to each other with an end of an end of an end of said first resonant capacitance, said inductance, said resonant inductance and the anode of said second diode, and the source electrode of said metal-oxide-semiconductor links to each other with the negative pole of said DC power supply, the emitter of said IGBT pipe and an end of said electric capacity;
The emitter of said IGBT pipe links to each other with the source electrode of the negative pole of said DC power supply, said metal-oxide-semiconductor and an end of said electric capacity, and the collector electrode of said IGBT pipe links to each other with an end of said resonant inductance and the anode of said first diode;
One end of said resonant inductance links to each other with an end of the anode of the drain electrode of an end of said inductance, said metal-oxide-semiconductor, said second diode, said first resonant capacitance and an end of said second resonant capacitance, and the other end of said resonant inductance links to each other with the collector electrode of said IGBT pipe and the anode of said first diode;
One end of said electric capacity links to each other with the negative electrode of the negative electrode of said second diode and said the 3rd diode, and the other end of said electric capacity links to each other with the source electrode of the negative pole of said DC power supply, said metal-oxide-semiconductor, the emitter of said IGBT;
One end of said second resonant capacitance links to each other with the anode of the negative electrode of said first diode and said the 3rd diode, and the other end of said second resonant capacitance links to each other with an end of an end of said inductance, said resonant inductance and the anode of said second diode;
Said first resonant capacitance is connected in parallel on said metal-oxide-semiconductor two ends, and an end of said first resonant capacitance links to each other with the drain electrode of said metal-oxide-semiconductor, and the other end of said first resonant capacitance links to each other with the source electrode of said metal-oxide-semiconductor;
The anode of said first diode links to each other with an end of said resonant inductance and the collector electrode of said IGBT pipe, and the negative electrode of said first diode links to each other with an end of said second resonant capacitance and the anode of said the 3rd diode;
The anode of said second diode links to each other with an end of the drain electrode of an end of said inductance, said metal-oxide-semiconductor, an end of said first resonant capacitance, said resonant inductance and an end of said second resonant capacitance, and the negative electrode of said second diode links to each other with the negative electrode of said the 3rd diode and an end of said electric capacity;
The anode of said the 3rd diode links to each other with an end of said second resonant capacitance and the negative electrode of said first diode, and the negative electrode of said the 3rd diode links to each other with an end of said electric capacity and the negative electrode of said second diode.
Further, the metal-oxide-semiconductor in the present embodiment can be specially COOL metal-oxide-semiconductor or silicon carbide mos pipe, and the IGBT pipe can be specially carborundum IGBT pipe, and first diode can also be specially silicon carbide diode.
Wherein, it is exportable bigger power that the COOL metal-oxide-semiconductor need not to add radiator, has, under-voltage protection, overtemperature protection and overcurrent protection, and has self-recovering function; Holding state and can reduce operating frequency automatically when unloaded, thus reduce the wastage, avoiding audible noise, and circuit structure is simple, and required external component is few, thereby significantly reduces the volume and weight of Switching Power Supply.
Introduce the operation principle of booster circuit in the present embodiment below, continue to consult Fig. 3.
In the initial condition of circuit, metal-oxide-semiconductor and IGBT pipe all are in off state.
After connecting DC power supply, establishing initial voltage is u
0Electric current on the inductance is linear to be increased, and to load energy is provided, and to the electric capacity charging, the initial current in the resonant inductance is that the initial voltage of 0, the second resonant capacitance is u simultaneously
0Along with inductive current increases, second diode is open-minded, and the electric capacity charging voltage reaches u
0At this moment, because metal-oxide-semiconductor turn-offs, first resonant capacitance is equivalent to two ends and links to each other with power supply respectively at inductance, and then first resonant capacitance also is recharged simultaneously, and voltage can reach u
0At this moment, first diode and the 3rd diode all are in cut-off state.
Further, send and open the grid of control wave to the IGBT pipe, after the grid of IGBT pipe received and opens control wave, the IGBT pipe was open-minded.Because second link of resonant inductance is connected with the collector electrode of IGBT pipe, the resonant inductance and first resonant capacitance are formed resonant circuit, and before second diode did not turn-off, resonant inductance voltage perseverance was u
0, at this moment, IGBT manages zero current turning-on, can reduce switching loss, and the electric current in the resonant inductance is linear to rise.Because the value of the relative resonant inductance of value of inductance is bigger, for example, inductance can be 1.1 milihenries, and resonant inductance can be 20 microhenrys, and inductive current is constant relatively, and linearity reduces so the electric current in second diode increases with the electric current in the resonant inductance.When resonance current rises to when equating with the electric current of inductance, the electric current vanishing in second diode realizes the second diode zero-current switching.After this, the resonant inductance and the first resonant capacitance generation resonance, the electric current in the resonant inductance continue to increase, and the first resonant capacitance voltage will descend by the resonance rule.At the second diode blocking interval, the load voltage is kept by electric capacity, and sustaining voltage is u
0
Further; When the voltage resonance of first resonant capacitance arrived zero, the grid of metal-oxide-semiconductor received and opens control wave, makes that the metal-oxide-semiconductor no-voltage is open-minded; Send simultaneously and turn-off the grid of control impuls to the IGBT pipe; This moment, the voltage of IGBT pipe was zero, and the IGBT pipe can be considered the Zero-voltage soft shutoff after receiving this shutoffs control signal, and the metal-oxide-semiconductor no-voltage opens that shutoff all can reduce switching loss with the IGBT no-voltage.Then the energy in the resonant inductance shifts to second resonant capacitance with diode through the, gives the charging of second resonant capacitance, and this moment, first resonant capacitance was equivalent to be directly parallel in IGBT pipe two ends, played the effect of clamping down on the rising of IGBT pipe voltage.When resonant inductance is the charging of second resonant capacitance; Be the electric capacity charging also simultaneously through the 3rd diode; IGBT pipe voltage when off state reaches peak, and the electric current linearity of resonant inductance reduces, and all discharges up to the resonant inductance energy; At this moment, the voltage of second resonant capacitance and electric capacity is u
0, the unilateral conduction of utilizing first diode is the harmless charging of second resonant capacitance, utilizes the unilateral conduction of the 3rd diode to be the harmless charging of electric capacity simultaneously.
Further, because the effect of resonant circuit, after the energy of resonant inductance all shifts; It is maximum that the first resonant capacitance voltage reaches, and this moment, metal-oxide-semiconductor was opened, so be induction charging through metal-oxide-semiconductor; Flow through linear the increasing of electric current of metal-oxide-semiconductor; And this moment, electric capacity and second resonant capacitance began discharge, and at this moment, first diode, second diode and the 3rd diode all are in cut-off state.
At this moment, send and turn-off control impuls pass signal to metal-oxide-semiconductor, metal-oxide-semiconductor turn-offs after receiving this shutoff pulse signal; Because inductance charges to first resonant capacitance; Voltage rises and is clamped down on, and turn-offs so the shutoff of metal-oxide-semiconductor can be considered Zero-voltage soft, can reduce switching loss.And then DC power supply is increasing through the voltage that inductance provides, and the voltage linear of first resonant capacitance rises, and is filled with voltage u because second resonant capacitance closes to have no progeny at the IGBT pipe
0And along with the voltage linear of first resonant capacitance rises; Because the resonant inductance and the first resonant capacitance generation resonance, the voltage of resonant inductance also begin linear the rising, again because the resonant inductance and the first resonant capacitance generation resonance; The voltage of second resonant capacitance also begins linear the rising, and the energy in second resonant capacitance will shift to capacitor C through the 3rd diode.When the voltage equipotentiality that between second resonant capacitance and electric capacity, forms, when promptly the voltage of second resonant capacitance equated with the voltage of electric capacity in uphill process, the energy in second resonant capacitance had discharged, and at this moment, the voltage of electric capacity is to be higher than initial voltage u
0, thereby the voltage that offers load raises, and completion is boosted.
In the embodiment of the invention, in circuit, increase an IGBT pipe, a resonant inductance, two resonant capacitances and three diodes, through the switching of control metal-oxide-semiconductor and IGBT pipe; Make resonant inductance constitute resonant circuit with second resonant capacitance and first resonant capacitance constantly, and pass through the unidirectional conduction of diode, harmless accumulation energy in resonant capacitance in difference; And energy offered the electric capacity into electric, and boost thereby accomplish, improve boosting efficiency; Simultaneously, because the metal-oxide-semiconductor in the circuit is COOL metal-oxide-semiconductor or silicon carbide mos pipe, the IGBT pipe is carborundum IGBT pipe; Switching loss is little and conduction loss is also little; And first diode is to be exclusively used in the silicon carbide diode that boosts, thereby improves boosting efficiency, and reduces the complete machine heat dissipation capacity.
For ease of understanding, see also Fig. 4, the sequential chart of each circuit element parameter when moving for the present embodiment circuit, wherein the implication of each parameter of ordinate is respectively:
U
GsVT1 is the gate source voltage across poles of metal-oxide-semiconductor;
U
GeVT2 is the grid emission voltage across poles of IGBT pipe;
U
CR1Be the voltage of first resonant capacitance;
U
CeVT2 is a voltage between the collector emitter of IGBT pipe;
I
LrElectric current for resonant inductance;
U
VD2Be the voltage of second diode;
I
VD2It is the electric current of second diode;
U
CRBe the voltage of second resonant capacitance.
Particularly:
1) at initial time t
0Before, metal-oxide-semiconductor and IGBT pipe are in off state;
After connecting DC power supply, establishing initial voltage is u
0Electric capacity provides energy to load end, is u to load two ends output voltage
0Because the obstruction function of current of resonant inductance LR, its electric current initial condition is 0, and at this moment, because metal-oxide-semiconductor turn-offs, first resonant capacitance is equivalent to two ends and links to each other with power supply respectively at inductance, and then first resonant capacitance charging back voltage also is u
0, second diode is open-minded, and first diode, the 3rd diode all are in cut-off state;
2) (t
0-t
1) period, at t
0Constantly open the IGBT pipe earlier, because there is resonant inductance to connect, because resonant inductance also hinders the increase through electric current, so before second diode did not turn-off, resonant inductance voltage perseverance was u with the IGBT pipe
0Behind the IGBT pipe zero current turning-on, the electric current I of resonant inductance
LrThe linear rising, because the value of the relative resonant inductance of value of inductance is bigger, so inductive current is constant relatively, linearity reduces so the electric current in second diode is with the electric current increase of resonant inductance;
3) (t
1-t
2) period, at t
1Constantly, when the electric current of resonant inductance rose to and equates with the electric current of inductance, the electric current in second diode was zero, realizes the second diode zero-current switching.After this, the resonant inductance and the first resonant capacitance generation resonance, the electric current I of resonant inductance
LrContinuing increases, and the first resonant capacitance voltage will descend by the resonance rule.The second diode blocking interval, the load voltage maintains u by electric capacity
0
4) (t
2-t
3) period, t
2Constantly, the voltage U of first resonant capacitance
CR1When resonance arrives zero, send and open control wave, make the diode no-voltage of winning open-minded, send the closing control pulse signal simultaneously, turn-off the IGBT pipe, this closing control pulse signal of IGBT pipe reception realizes that Zero-voltage soft turn-offs.Energy in the resonant inductance shifts to second resonant capacitance through first diode; Open control wave to the metal-oxide-semiconductor transmission; Metal-oxide-semiconductor receives this and opens behind the control wave open-minded; Then first resonant capacitance is equivalent to be directly parallel in IGBT pipe two ends, and the characteristic of resonant capacitance makes IGBT pipe voltage rise and clamped down on;
5) (t
3-t
4) period, resonant inductance charges to second resonant capacitance, and the 3rd diode current flow, and IGBT pipe voltage reaches peak, after this electric current I of resonant inductance
LrLinearity reduces, and all discharges up to the resonant inductance energy;
6) (t
4-t
5) period, t
4Constantly; Send to metal-oxide-semiconductor and to open control wave, metal-oxide-semiconductor receives this and opens behind the control wave open-mindedly, sends to the IGBT pipe and to turn-off control wave; After receiving this shutoff control wave, turn-offs the IGBT pipe; At this moment, to inductance energy is provided, flows through the electric current I of metal-oxide-semiconductor through metal-oxide-semiconductor
VT1Linear increasing, all diodes all are in cut-off state in the circuit;
7) (t
5-t
6) period, t
5Constantly, send the shutoff control wave to metal-oxide-semiconductor, metal-oxide-semiconductor turn-offs after receiving this shutoff control wave; Before second diode current flow; Inductance charges to first resonant capacitance, and the voltage rising is clamped down in first resonant capacitance, and the shutoff of metal-oxide-semiconductor can be considered Zero-voltage soft and turn-offs.Second resonant capacitance closes to have no progeny at the IGBT pipe and is filled with voltage U o, so along with U
CR1Rising, the energy among the second resonant capacitance CR will shift to capacitor C through second diode.Voltage U in second resonant capacitance
CR1Rise to when equating with U0, the energy in second resonant capacitance has discharged, and the 3rd diode ends, second diode current flow;
8) t
6Constantly, wait the next work period then, the IGBT pipe is open-minded once more, gets into next cycle period.
More than the concrete operation principle of DC-DC voltage boosting circuit in each stage can be referring to above-mentioned content in embodiment illustrated in fig. 3.
More than the DC-DC voltage boosting circuit that the embodiment of the invention provided is described in detail; Used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for those skilled in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (8)
1. a DC-DC voltage boosting circuit is characterized in that, comprising:
Switch module, resonance modules, boost module;
Wherein, said switch module is used for realizing opening or turn-offing of said DC-DC voltage boosting circuit branch road through receiving control wave, moves towards with Control current;
Said resonance modules links to each other with said switch module, is used for reducing the energy loss of said DC-DC voltage boosting circuit;
Said boost module all links to each other with said switch module, said resonance modules, is used for harmless absorption and accumulation rechargeable energy to boost.
2. circuit according to claim 1; It is characterized in that; Said switch module comprises IGBT pipe and metal-oxide-semiconductor, and wherein, the drain electrode of said metal-oxide-semiconductor links to each other with the positive pole of DC power supply through inductance; The source electrode of said metal-oxide-semiconductor links to each other with the negative pole of said DC power supply, and the emitter of said IGBT pipe links to each other with the negative pole of said DC power supply.
3. circuit according to claim 2; It is characterized in that said resonance modules comprises the resonant inductance and first resonant capacitance, wherein; One end of said resonant inductance links to each other with the drain electrode of said metal-oxide-semiconductor; The other end of said resonant inductance links to each other with the collector electrode of said IGBT pipe, and an end of said first resonant capacitance links to each other with the drain electrode of said metal-oxide-semiconductor, and the other end of said first resonant capacitance links to each other with the source electrode of said metal-oxide-semiconductor.
4. according to claim 2 or 3 described circuit, it is characterized in that said boost module comprises: first diode, second diode, the 3rd diode and second resonant capacitance;
Wherein, The anode of said first diode links to each other with the collector electrode of said IGBT pipe; The anode of said second diode links to each other with the drain electrode of said metal-oxide-semiconductor, and the anode of said the 3rd diode links to each other with the negative electrode of said first diode, and the negative electrode of said the 3rd diode links to each other with the negative electrode of said second diode; One end of said second resonant capacitance links to each other with the anode of said second diode, and the other end of said second resonant capacitance links to each other with the negative electrode of said first diode.
5. circuit according to claim 4 is characterized in that said circuit also comprises electric capacity;
Wherein, an end of said electric capacity all links to each other with the negative electrode of the negative electrode of said second diode, said three diodes, and the other end of said electric capacity all links to each other with the emitter of the source electrode of the negative pole of said DC power supply, said metal-oxide-semiconductor, said IGBT pipe.
6. circuit according to claim 2 is characterized in that,
Said metal-oxide-semiconductor is specially COOL metal-oxide-semiconductor or silicon carbide mos pipe.
7. circuit according to claim 2 is characterized in that,
Said IGBT pipe is specially carborundum IGBT pipe.
8. circuit according to claim 4 is characterized in that,
Said first diode is specially silicon carbide diode.
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| CN201210349199XA CN102843029A (en) | 2012-09-19 | 2012-09-19 | Direct current-direct current voltage boost circuit |
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|---|---|---|---|
| CN201210349199XA CN102843029A (en) | 2012-09-19 | 2012-09-19 | Direct current-direct current voltage boost circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103731573A (en) * | 2013-12-31 | 2014-04-16 | 华为终端有限公司 | Power supply circuit and telephone system |
| CN110601602A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | Drive IC circuit of intelligent power module, intelligent power module and air conditioner |
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| JP2000078836A (en) * | 1998-08-27 | 2000-03-14 | Sony Corp | Step-up converter device |
| JP3104875B2 (en) * | 1999-12-27 | 2000-10-30 | サンケン電気株式会社 | Step-up DC-DC converter |
| CN102484424A (en) * | 2009-08-31 | 2012-05-30 | 住友电气工业株式会社 | Power conversion device |
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| JPH07241072A (en) * | 1994-02-25 | 1995-09-12 | Sanken Electric Co Ltd | Booster type dc/dc converter |
| JP2000078836A (en) * | 1998-08-27 | 2000-03-14 | Sony Corp | Step-up converter device |
| JP3104875B2 (en) * | 1999-12-27 | 2000-10-30 | サンケン電気株式会社 | Step-up DC-DC converter |
| CN102484424A (en) * | 2009-08-31 | 2012-05-30 | 住友电气工业株式会社 | Power conversion device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731573A (en) * | 2013-12-31 | 2014-04-16 | 华为终端有限公司 | Power supply circuit and telephone system |
| WO2015101299A1 (en) * | 2013-12-31 | 2015-07-09 | 华为终端有限公司 | Power supply circuit and telephone system |
| CN103731573B (en) * | 2013-12-31 | 2015-11-25 | 华为终端有限公司 | A kind of power supply circuits and telephone system |
| CN105282350A (en) * | 2013-12-31 | 2016-01-27 | 华为终端有限公司 | Power supply circuit and telephone system |
| CN105282350B (en) * | 2013-12-31 | 2019-05-07 | 华为终端有限公司 | A kind of power supply circuit and telephone system |
| CN110601602A (en) * | 2018-06-13 | 2019-12-20 | 重庆美的制冷设备有限公司 | Drive IC circuit of intelligent power module, intelligent power module and air conditioner |
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Application publication date: 20121226 |