CN102842252B - Green laser indicator with small divergence angle and good beam quality - Google Patents
Green laser indicator with small divergence angle and good beam quality Download PDFInfo
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- CN102842252B CN102842252B CN201210301406.4A CN201210301406A CN102842252B CN 102842252 B CN102842252 B CN 102842252B CN 201210301406 A CN201210301406 A CN 201210301406A CN 102842252 B CN102842252 B CN 102842252B
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- 239000013078 crystal Substances 0.000 claims abstract description 189
- 238000005086 pumping Methods 0.000 claims abstract description 57
- 238000001816 cooling Methods 0.000 claims abstract description 46
- 239000011159 matrix material Substances 0.000 claims description 27
- 230000005540 biological transmission Effects 0.000 claims description 24
- 239000004411 aluminium Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- PGZVYLZFSKEWSE-UHFFFAOYSA-N yttrium(3+) borate hydrate Chemical compound O.B([O-])([O-])[O-].[Y+3] PGZVYLZFSKEWSE-UHFFFAOYSA-N 0.000 claims description 12
- 239000000110 cooling liquid Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 8
- RSKQIWJJZRAYHJ-UHFFFAOYSA-N [O-]B([O-])[O-].O.[Gd+3] Chemical compound [O-]B([O-])[O-].O.[Gd+3] RSKQIWJJZRAYHJ-UHFFFAOYSA-N 0.000 claims description 8
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- XDVOLDOITVSJGL-UHFFFAOYSA-N 3,7-dihydroxy-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B(O)OB2OB(O)OB1O2 XDVOLDOITVSJGL-UHFFFAOYSA-N 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ISOZGILPNVPXTK-UHFFFAOYSA-N [Y].B(O)(O)O.B(O)(O)O.B(O)(O)O.B(O)(O)O.[Yb] Chemical compound [Y].B(O)(O)O.B(O)(O)O.B(O)(O)O.B(O)(O)O.[Yb] ISOZGILPNVPXTK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 230000018199 S phase Effects 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract 4
- 230000000399 orthopedic effect Effects 0.000 description 3
- 238000000205 computational method Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
A green laser pointer with small divergence angle and good beam quality comprises: the self-frequency doubling crystal, the pumping source, the self-frequency doubling crystal fixing cooling heat dissipation device and the pumping source fixing cooling heat dissipation device; the self-frequency doubling crystal is fixed and cooled by the self-frequency doubling crystal fixing and cooling heat dissipation device, and the pumping source is fixed and cooled by the pumping source fixing and cooling heat dissipation device; the pumping source is aligned to the incident end face of the self-frequency doubling crystal for pumping and is fully absorbed by the self-frequency doubling crystal, and the self-frequency doubling crystal generates green indicating laser under the pumping condition. The invention obtains the self-frequency doubling green laser indicator which directly generates green indicating laser with small divergence angle and good beam quality without an external shaping system by designing the curvature radius of the output end surface of the self-frequency doubling crystal.
Description
Technical field
The present invention relates to a kind of laser, particularly little, the compact conformation of a kind of angle of divergence, the green laser indicating device that is used to indicate.
Background technology
Laser is often used to instruction because good beam quality, the angle of divergence are little, such as chamber is taken aim at etc.Current chamber is taken aim at and is mainly red laser and green laser, because green laser beam is subject to atmospheric interference little or almost do not have, so can obviously see beam of laser direct projection goes out, particularly observe night for naked eyes, the light of green glow is more soft compared with ruddiness, observe green glow effect more comfortable, unsuitable tired.But existing market is very few with green laser indicating device, main cause is that green semiconductor diode is difficult to realize.
Another approach that obtains green laser indicating device is to utilize semiconductor diode pump Nd:YVO
4/ KTP glues together crystal, then by one group of lens, Output of laser is carried out to shaping and meet the demand that the angle of divergence is little.But there are two defects in this method, the one, element is many, and resistance to overturning is not good, interelement position relatively moves and will cause Output of laser performance to reduce, the 2nd, due to KTP nonlinear crystal self character, the applicable operational environment scope of this indicating device is not wide, and start-up time is long.
Self-frequency-doubling crystal is a kind of ideal style that obtains visible laser output.Active ions are doped into a crystal with nonlinear optical properties, and making it is laser crystal, has again nonlinear function.In the time that the cut direction of crystal is cut along the direction of phase matched, thereby the basic frequency laser that just can produce ion at crystals directly carry out obtaining green laser output from frequency multiplication.At present, develop the multiple self-frequency-doubling laser that is applicable to different application, for example patent " a kind of be suitable for laser display uses from frequency doubling green light solid state laser " (201010272964.3), " a kind of lower powered green laser pen " (201010130463.1) and " a kind of single frequency visible laser " (201010159919.7).But still there is no a kind ofly can directly to produce without outer orthopedic systems that the angle of divergence is little, a self-frequency-doubling laser of the green of good beam quality instruction laser.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, by the radius of curvature of design self-frequency-doubling crystal output end face, and obtain directly produce without outer orthopedic systems that the angle of divergence is little, the green of good beam quality instruction laser from frequency multiplication green laser indicating device.
The object of the present invention is achieved like this:
The measured green laser indicating device of angle of divergence penlight matter provided by the invention, it is made up of self-frequency-doubling crystal, pumping source, the fixing cooling heat radiator of self-frequency-doubling crystal and the fixing cooling heat radiator of pumping source;
Described self-frequency-doubling crystal is placed in the fixing cooling heat radiator of self-frequency-doubling crystal, and self-frequency-doubling crystal is fixing and cooling by the fixing cooling heat radiator of self-frequency-doubling crystal;
Described pumping source is fixing and cooling by the fixing cooling heat radiator of pumping source;
Described self-frequency-doubling crystal is block self-frequency-doubling crystal, two end faces of described self-frequency-doubling crystal all pass through optical polish processing, the end face of described self-frequency-doubling crystal's close pumping source is planar end, this planar end is light-incident end, on it, be coated with pump light high transmission, to the film of fundamental frequency light and the high reflection of frequency doubled light; Described self-frequency-doubling crystal's other end is the curved surface end face of radius of curvature R, and this curved surface end face is light output end face, is coated with the high reflection of fundamental frequency light and the film to the high transmission of frequency doubled light on it;
The light-incident end that described pumping source is aimed at self-frequency-doubling crystal carries out pumping, and pump light is fully absorbed by described self-frequency-doubling crystal, produces the green laser that the angle of divergence is θ in self-frequency-doubling crystal, and is exported by self-frequency-doubling crystal's light output end face; Described angle of divergence θ is:
M in formula
2for beam quality factor actual measurement obtains, or according to pump spot size ω p and chamber film radius ω estimation,
mc
00, Mc
01with Mc
11be respectively pump light and in self-frequency-doubling crystal, transmit the matrix element of the transmission matrix Mc of a week, described Mc
00for transmission matrix M
cthe first row first row matrix element, Mc
01for the first row secondary series matrix element of transmission matrix Mc, Mc
11for the second row secondary series matrix element of transmission matrix Mc; The transmission matrix Mc that described light transmits one week in self-frequency-doubling crystal is:
In formula, n is self-frequency-doubling crystal's refractive index; F is the thermal focal of self-frequency-doubling crystal while working, and actual measurement obtains; L is self-frequency-doubling crystal's length;
Angle of divergence θ is the function of a single variable of self-frequency-doubling crystal's output end face radius of curvature R, θ=F (R), computer utilizes Geometric figure drawing method to draw the function curve of angle of divergence θ about self-frequency-doubling crystal's output end face radius of curvature R, thereby intuitively draws radius of curvature R corresponding to setting angle of divergence θ.
Described self-frequency-doubling crystal cross section is that 0.5～10mm × 0.5～10mm is square, or is the radius circle that is 0.5～10mm, and length L is 2～8mm; Described self-frequency-doubling crystal's cut direction is along this self-frequency-doubling crystal's phase matched direction.
Described pumping source is semiconductor diode; Described pumping source is aimed at the center of self-frequency-doubling crystal's light-incident end and is carried out pumping, and pump light enters crystal and is fully absorbed perpendicular to self-frequency-doubling crystal's light-incident end; The wavelength of described semiconductor diode is self-frequency-doubling crystal's absorbing wavelength.
The fixing cooling heat radiator of described pumping source and the fixing cooling heat radiator of self-frequency-doubling crystal are the heat abstractor that two ends are respectively equipped with cooling liquid inlet and cooling liquid outlet, and according to the element of pumping source size and self-frequency-doubling crystal's dimensioned, material is copper, aluminium or iron.
Described self-frequency-doubling crystal is neodymium-doped tetraboric acid yttrium aluminium self-frequency-doubling crystal, mixes ytterbium tetraboric acid yttrium aluminium self-frequency-doubling crystal, neodymium-doped three line borate oxygen gadolinium self-frequency-doubling crystals, neodymium-doped three line borate oxygen yttrium self-frequency-doubling crystals, mixes ytterbium three line borate oxygen gadolinium self-frequency-doubling crystals, mixes ytterbium three line borate oxygen yttrium self-frequency-doubling crystals or er-doped three line borate oxygen yttrium self-frequency-doubling crystals.
Green laser indicating device of the present invention compared with prior art tool has the following advantages: volume is little, compact conformation, can directly produce without outer orthopedic systems that the angle of divergence is little, the green of good beam quality instruction laser.
Brief description of the drawings
Fig. 1 is the structural representation of green laser indicating device of the present invention;
Fig. 2 is self-frequency-doubling crystal's light output end face curvature radius R computational methods schematic diagram;
Fig. 3 is that the beamwidth of the inner 530nm laser of self-frequency-doubling crystal distributes;
Fig. 4 is that embodiment 2 manufactures a kind of lath green laser indicating device based on Nd:YCOB crystal.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
Fig. 1 is the structural representation of green laser indicating device of the present invention; Fig. 2 is self-frequency-doubling crystal's light output end face curvature radius R computational methods schematic diagram; Fig. 3 is that the beamwidth of the inner 530nm laser of self-frequency-doubling crystal distributes; Fig. 4 is that embodiment 2 manufactures a kind of lath green laser indicating device based on Nd:YCOB crystal; As seen from the figure, the measured green laser indicating device of angle of divergence penlight matter of the present invention, it is made up of self-frequency-doubling crystal 1, pumping source 2, the fixing cooling heat radiator 3 of self-frequency-doubling crystal and the fixing cooling heat radiator 4 of pumping source;
Described self-frequency-doubling crystal 1 is placed in the fixing cooling heat radiator 3 of self-frequency-doubling crystal, and self-frequency-doubling crystal 1 is fixing and cooling by the fixing cooling heat radiator 3 of self-frequency-doubling crystal;
Described pumping source 2 is fixing and cooling by the fixing cooling heat radiator 4 of pumping source;
Described self-frequency-doubling crystal 1 is block self-frequency-doubling crystal, two end faces of described self-frequency-doubling crystal 1 all pass through optical polish processing, the end face of described self-frequency-doubling crystal's 1 close pumping source 2 is planar end, this planar end is light-incident end, on it, be coated with pump light high transmission, to the film of fundamental frequency light and the high reflection of frequency doubled light; Described self-frequency-doubling crystal's 1 other end is the curved surface end face of radius of curvature R, and this curved surface end face is light output end face, is coated with the high reflection of fundamental frequency light and the film to the high transmission of frequency doubled light on it;
The light-incident end that described pumping source 2 is aimed at self-frequency-doubling crystal 1 carries out pumping, and pump light is fully absorbed by described self-frequency-doubling crystal 1, the green laser that is θ in the interior generation angle of divergence of self-frequency-doubling crystal 1, and exported by self-frequency-doubling crystal 1 light output end face; Described angle of divergence θ is:
M in formula
2for beam quality factor, can survey acquisition; Or according to pump spot size ω p and chamber film radius ω estimation,
mc
00, Mc
01with Mc
11be respectively pump light and in self-frequency-doubling crystal, transmit the matrix element of the transmission matrix Mc of a week, described Mc
00for the first row first row matrix element of transmission matrix Mc, Mc
01for the first row secondary series matrix element of transmission matrix Mc, Mc
11for the second row secondary series matrix element of transmission matrix Mc; The transmission matrix Mc that described light transmits one week in self-frequency-doubling crystal is:
In formula, n is self-frequency-doubling crystal's refractive index; F is the thermal focal of self-frequency-doubling crystal while working, and actual measurement obtains; L is self-frequency-doubling crystal's length;
Angle of divergence θ is the function of a single variable of self-frequency-doubling crystal's output end face radius of curvature R, θ=F (R), computer utilizes Geometric figure drawing method to draw the function curve of angle of divergence θ about self-frequency-doubling crystal's output end face radius of curvature R, thereby intuitively draws radius of curvature R corresponding to setting angle of divergence θ.
Described self-frequency-doubling crystal 1 cross section is that 0.5～10mm × 0.5～10mm is square, or is the radius circle that is 0.5～10mm, and length L is 2～8mm; Described self-frequency-doubling crystal's 1 cut direction is along this self-frequency-doubling crystal's 1 phase matched direction.
Described pumping source 2 is semiconductor diode; Described pumping source 2 is aimed at the center of self-frequency-doubling crystal's 1 light-incident end and is carried out pumping, and pump light enters crystal and is fully absorbed perpendicular to self-frequency-doubling crystal's 1 light-incident end; The wavelength of described semiconductor diode is self-frequency-doubling crystal's absorbing wavelength.
The fixing cooling heat radiator 3 of the fixing cooling heat radiator 4 of described pumping source and self-frequency-doubling crystal is respectively equipped with the heat abstractor of cooling liquid inlet and cooling liquid outlet for two ends, according to the element of pumping source size and self-frequency-doubling crystal's dimensioned, material is copper, aluminium or iron.
Described self-frequency-doubling crystal 1 is neodymium-doped tetraboric acid yttrium aluminium self-frequency-doubling crystal, mixes ytterbium tetraboric acid yttrium aluminium self-frequency-doubling crystal, neodymium-doped three line borate oxygen gadolinium self-frequency-doubling crystals, neodymium-doped three line borate oxygen yttrium self-frequency-doubling crystals, mixes ytterbium three line borate oxygen gadolinium self-frequency-doubling crystals, mixes ytterbium three line borate oxygen yttrium self-frequency-doubling crystals or er-doped three line borate oxygen yttrium self-frequency-doubling crystals.
Embodiment 1
The present embodiment is made a kind of beam quality M
2=1, the green laser indicating device of angle of divergence θ <1mrad; The present embodiment concrete structure is with reference to figure 1.
The green laser indicating device of the present embodiment, comprising: self-frequency-doubling crystal 1, pumping source 2, the fixing cooling heat radiator 3 of self-frequency-doubling crystal and the fixing cooling heat radiator 4 of pumping source; Self-frequency-doubling crystal 1 is fixing and cooling by the fixing cooling heat radiator 3 of self-frequency-doubling crystal, and pumping source 2 is fixing and cooling by fixing cooling heat radiator 4; The incident end face that pumping source 2 is aimed at self-frequency-doubling crystal 1 carries out pumping, and is fully absorbed by it;
In the present embodiment, self-frequency-doubling crystal 1 adopts and is of a size of φ 3 × 8mm, and the Nd:GdCOB pole shape self-frequency-doubling crystal of doping content 8at.%, is axially the phase matched direction of 1060nm laser; Self-frequency-doubling crystal's cooling heat radiator 3 one end are provided with cooling liquid inlet, and the other end is provided with cooling liquid inlet; In self-frequency-doubling crystal's cooling heat radiator 3 both ends of the surface, leave symmetrical φ 3mm circular hole, pole shape self-frequency-doubling crystal 1 puts into self-frequency-doubling crystal's cooling heat radiator 3, support and fix by the symmetrical circular hole of both ends of the surface, afterwards with 704 glue sealings (or adopting O circle pressure type structure by its good seal); Self-frequency-doubling crystal's cooling heat radiator 3 adopts red copper material, cooling fluid adopts distilled water, cooling fluid enters from the cooling liquid entrance of self-frequency-doubling crystal's cooling heat radiator 3, flow through bar-shaped self-frequency-doubling crystal's 1 side, take away the heat of bar-shaped self-frequency-doubling crystal's 1 interior generation by heat exchange, then flow out from self-frequency-doubling crystal 1 cooling liquid outlet.
1 two end faces of self-frequency-doubling crystal all carry out optical polish processing, and an end face is plane, are coated with 811nm pump light high transmission, and to the film of 1060nm fundamental frequency light and the high reflection of 530nm frequency doubled light, this surface feeding sputtering end face is near pumping source 2; Self-frequency-doubling crystal 1 other end is as output end face, and this output end face is the curved surface of radius of curvature R=-5000, is coated with the high reflection of 1060nm fundamental frequency light and the film to the high transmission of 530 frequency doubled light;
Pumping source 2 is semiconductor laser (LD), and Output of laser wavelength is 811nm, is fixed on pumping source heat abstractor 4 and dispels the heat; The pump light that LD sends enters self-frequency-doubling crystal 1 from pole shape self-frequency-doubling crystal 1 incident end face, and the abundant absorptive pumping light energy of self-frequency-doubling crystal 1 produces 1060nm fundamental frequency light.
For meeting beam quality M
2=1, the green instruction laser that angle of divergence θ <1mrad requires, radius of curvature R determining step is: draw get respectively-200mm of R ,-500mm ,-1000mm ,-2000mm, angle of divergence θ is about the change curve of thermal focal f, as mistake when-5000mm! Do not find Reference source.Shown in (in figure fx be described thermal focal f), a figure is R while getting above-mentioned value, angle of divergence θ is about the change curve of thermal focal f, get-1000mm of radius of curvature R ,-2000mm, likely meets the requirement of the angle of divergence θ <1mrad when-5000mm; B, c, d tri-width figure are that R gets above-mentioned three values, and angle of divergence error is ± curve partial enlarged drawing when 0.5mrad that (thermal focal adjustable extent is larger) grown in the steady district of R=-5000, is conducive to system stable operation; In the time of R=-5000, while regulating pumping light power density to make thermal focal be f=4960mm, meet the requirement of angle of divergence θ <1mrad.
As shown in Figure 3, for the beamwidth of the green laser indicating device self-frequency-doubling crystal 1 inner 530nm laser of the present embodiment distributes (taking millimeter as unit), a, b figure is respectively crystal first half section and second half section beamwidth distribution; Ordinate is waist radius, and abscissa is along crystal optical direction; This beam radius (0-L) in self-frequency-doubling crystal is steady state value; Calculating by the angle of divergence θ computing formula of laser the 530nm green laser angle of divergence that this green laser indicating device sends is θ=0.896mrd.
Embodiment 2
As shown in Figure 4, the present embodiment is manufactured a kind of lath green laser indicating device based on Nd:YCOB crystal.The present embodiment is similar to Example 1, and difference mainly contains:
It is the Nd:YCOB crystal of 8at.% that self-frequency-doubling crystal 1 adopts doping content, this self-frequency-doubling crystal is made into the lath-shaped of length L × width W × thickness H, be processed into the lath-shaped of 5mm × 1mm × 3mm, self-frequency-doubling crystal's 1 horizontal direction (along length L direction) is the phase matched direction of effective nonlinear coefficient maximum.The end face at two of this self-frequency-doubling crystal's lath, through optical polish and plate the film for fundamental frequency light and the high transmission of frequency doubled light.
Self-frequency-doubling crystal 1 places and is fixed on the fixing cooling heat radiator 3 of self-frequency-doubling crystal with heat radiation and temperature controlling function.Pumping source 2 is placed on the fixing cooling heat radiator 4 of pumping source, and pumping source 2 is aimed at self-frequency-doubling crystal 1 upper surface (face of length L × width W), and carry out pumping and be fully absorbed,
Self-frequency-doubling crystal's 1 end face radius of curvature is R=-999mm, when this design work thermal focal f=1000mm, and laser emission angle θ=0.734mrd.
Embodiment 3
The present invention makes that a kind of volume is little and the angle of divergence is little, the green laser indicating device of good beam quality.The present embodiment is similar to Example 1, and difference mainly contains:
The one,, self-frequency-doubling crystal 1 is processed into 3mm × 3mm × 8mm rectangle;
The 2nd,, this laser is without crystal cooling system, and the fixing cooling heat radiator 3 of the self-frequency-doubling crystal in embodiment 1 only provides fixed support effect.
With respect to embodiment 1, this laser body advantage is long-pending little, but the green laser power of output is lower, is applicable to instruction laser power to require low application demand.
Above-described embodiment has only been enumerated the Nd:GdCOB pole shape self-frequency-doubling crystal that self-frequency-doubling crystal 1 is doping content 8at.%, Nd:YCOB crystal and neodymium-doped tetraboric acid yttrium aluminium self-frequency-doubling crystal's example, but those skilled in the art all knows self-frequency-doubling crystal 1 can be neodymium-doped tetraboric acid yttrium aluminium self-frequency-doubling crystal, mix ytterbium tetraboric acid yttrium aluminium self-frequency-doubling crystal, neodymium-doped three line borate oxygen gadolinium self-frequency-doubling crystals, neodymium-doped three line borate oxygen yttrium self-frequency-doubling crystals, mix ytterbium three line borate oxygen gadolinium self-frequency-doubling crystals, mix ytterbium three line borate oxygen yttrium self-frequency-doubling crystals or er-doped three line borate oxygen yttrium self-frequency-doubling crystals all can.Those skilled in the art is when making according to the present invention various corresponding changes and modification, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (5)
1. the measured green laser indicating device of angle of divergence penlight matter, it is made up of self-frequency-doubling crystal, pumping source, the fixing cooling heat radiator of self-frequency-doubling crystal and the fixing cooling heat radiator of pumping source;
Described self-frequency-doubling crystal is placed in the fixing cooling heat radiator of self-frequency-doubling crystal, and self-frequency-doubling crystal is fixing and cooling by the fixing cooling heat radiator of self-frequency-doubling crystal;
Described pumping source is fixing and cooling by the fixing cooling heat radiator of pumping source;
Described self-frequency-doubling crystal is block self-frequency-doubling crystal, two end faces of described self-frequency-doubling crystal all pass through optical polish processing, the end face of described self-frequency-doubling crystal's close pumping source is planar end, this planar end is light-incident end, on it, be coated with pump light high transmission, to the film of fundamental frequency light and the high reflection of frequency doubled light; Described self-frequency-doubling crystal's other end is the curved surface end face of radius of curvature R, and this curved surface end face is light output end face, is coated with the high reflection of fundamental frequency light and the film to the high transmission of frequency doubled light on it;
The light-incident end that described pumping source is aimed at self-frequency-doubling crystal carries out pumping, and pump light is fully absorbed by described self-frequency-doubling crystal, produces the green laser that the angle of divergence is θ in self-frequency-doubling crystal, and is exported by self-frequency-doubling crystal's light output end face; Described angle of divergence θ is:
M in formula
2for beam quality factor actual measurement obtains; Or according to pump spot size ω p and chamber film radius ω estimation,
mc
00, Mc
01with Mc
11be respectively pump light and in self-frequency-doubling crystal, transmit the matrix element of the transmission matrix Mc of a week, described Mc
00for the first row first row matrix element of transmission matrix Mc, Mc
01for the first row secondary series matrix element of transmission matrix Mc, Mc
11for the second row secondary series matrix element of transmission matrix Mc; The transmission matrix Mc that described light transmits one week in self-frequency-doubling crystal is:
In formula, n is self-frequency-doubling crystal's refractive index; F is the thermal focal of self-frequency-doubling crystal while working, can actual measurement obtain; L is self-frequency-doubling crystal's length;
Angle of divergence θ is the function of a single variable of self-frequency-doubling crystal's output end face radius of curvature R, θ=F (R), computer utilizes Geometric figure drawing method to draw the function curve of angle of divergence θ about self-frequency-doubling crystal's output end face radius of curvature R, thereby intuitively draws radius of curvature R corresponding to setting angle of divergence θ.
2. green laser indicating device according to claim 1, is characterized in that, described self-frequency-doubling crystal cross section is that 0.5～10mm × 0.5～10mm is square, or is the radius circle that is 0.5～10mm, and length L is 2～8mm; Described self-frequency-doubling crystal's cut direction is along this self-frequency-doubling crystal's phase matched direction.
3. green laser indicating device according to claim 1, is characterized in that, described pumping source is semiconductor diode; Described pumping source is aimed at the center of self-frequency-doubling crystal's light-incident end and is carried out pumping, and pump light enters crystal and is fully absorbed perpendicular to self-frequency-doubling crystal's light-incident end; The wavelength of described semiconductor diode is self-frequency-doubling crystal's absorbing wavelength.
4. green laser indicating device according to claim 1, it is characterized in that, the fixing cooling heat radiator of described pumping source and the fixing cooling heat radiator of self-frequency-doubling crystal are the heat abstractor that two ends are respectively equipped with cooling liquid inlet and cooling liquid outlet, according to the element of pumping source size and self-frequency-doubling crystal's dimensioned, material is copper, aluminium or iron.
5. green laser indicating device according to claim 1, it is characterized in that, described self-frequency-doubling crystal is neodymium-doped tetraboric acid yttrium aluminium self-frequency-doubling crystal, mixes ytterbium tetraboric acid yttrium aluminium self-frequency-doubling crystal, neodymium-doped three line borate oxygen gadolinium self-frequency-doubling crystals, neodymium-doped three line borate oxygen yttrium self-frequency-doubling crystals, mixes ytterbium three line borate oxygen gadolinium self-frequency-doubling crystals, mixes ytterbium three line borate oxygen yttrium self-frequency-doubling crystals or er-doped three line borate oxygen yttrium self-frequency-doubling crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210301406.4A CN102842252B (en) | 2012-08-22 | 2012-08-22 | Green laser indicator with small divergence angle and good beam quality |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210301406.4A CN102842252B (en) | 2012-08-22 | 2012-08-22 | Green laser indicator with small divergence angle and good beam quality |
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| Publication Number | Publication Date |
|---|---|
| CN102842252A CN102842252A (en) | 2012-12-26 |
| CN102842252B true CN102842252B (en) | 2014-10-08 |
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| US6185236B1 (en) * | 1999-02-02 | 2001-02-06 | University Of Central Florida | Self frequency double nd-doped: YCOB LASER |
| CN101950918A (en) * | 2010-09-03 | 2011-01-19 | 中国科学院理化技术研究所 | Self-frequency-doubling green light solid laser suitable for laser display |
| CN102074887A (en) * | 2010-01-13 | 2011-05-25 | 山东大学 | Self-frequency conversion solid laser based on neodymium-doped gadolinium calcium oxide borate crystal |
| CN102074888A (en) * | 2010-04-23 | 2011-05-25 | 中国科学院理化技术研究所 | Self-frequency-doubling laser with single-beam laser output or linear array laser output |
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| CN102544995A (en) * | 2010-12-30 | 2012-07-04 | 北京中视中科光电技术有限公司 | Green laser |
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| US6185236B1 (en) * | 1999-02-02 | 2001-02-06 | University Of Central Florida | Self frequency double nd-doped: YCOB LASER |
| CN102074887A (en) * | 2010-01-13 | 2011-05-25 | 山东大学 | Self-frequency conversion solid laser based on neodymium-doped gadolinium calcium oxide borate crystal |
| CN102074888A (en) * | 2010-04-23 | 2011-05-25 | 中国科学院理化技术研究所 | Self-frequency-doubling laser with single-beam laser output or linear array laser output |
| CN101950918A (en) * | 2010-09-03 | 2011-01-19 | 中国科学院理化技术研究所 | Self-frequency-doubling green light solid laser suitable for laser display |
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