CN102839347A - Preparation method for metal aluminum induced polycrystalline cadmium zinc telluride film - Google Patents
Preparation method for metal aluminum induced polycrystalline cadmium zinc telluride film Download PDFInfo
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- CN102839347A CN102839347A CN2011101722001A CN201110172200A CN102839347A CN 102839347 A CN102839347 A CN 102839347A CN 2011101722001 A CN2011101722001 A CN 2011101722001A CN 201110172200 A CN201110172200 A CN 201110172200A CN 102839347 A CN102839347 A CN 102839347A
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Abstract
The present invention relates to a preparation method for a metal aluminum induced polycrystalline cadmium zinc telluride film. The preparation method is characterized by comprising: cleaning a substrate; then under a vacuum degree condition, heating, introducing argon gas, and carrying out backwash cleaning; applying a sputtering power on a cadmium zinc telluride crystal target to carry out build-up of luminance; plating a cadmium zinc telluride forerunner film on the surface of the substrate; then sputtering a metal aluminum film on the surface of the cadmium zinc telluride forerunner film to prepare a cadmium zinc telluride forerunner film/induced metal Al film laminated structure; under a protection atmosphere of argon gas, carrying out a heat treatment on the cadmium zinc telluride forerunner film/induced metal Al film laminated structure; and finally adopting a sodium hydroxide solution with a pH value of 12 to remove aluminum material corrosion precipitated from the surface to obtain the polycrystalline cadmium zinc telluride film product. The method has advantages and effects of low cost, application for large area film deposition, high adhesion between the film and the substrate, good controllability, high raw material utilization rate, high production efficiency, good formed film quality, large grain size, and high carrier mobility.
Description
Technical field
The present invention relates to a kind of metallic aluminium and induce the preparation method of polycrystalline tellurium zincium vestalium thin-film, belong to group thin-film material field.
Background technology
Tellurium zinc cadmium, English name cadmium zinc telluride, CdZnTe is abbreviated as CZT, is the novel room temperature semiconductor detector material of a kind of excellent performance of getting up of developed recently.Because physical propertys such as its resistivity is high, ordination number big (48～52), quantum yield is high, charge transport properties is excellent and energy gap is big are fit to process X, gamma detector very much, can be widely used in fields such as astronomy, medical science, industry, military affairs.Yet because tellurium-zincium-cadmium crystal is ionic strong, thermal conductivity is lower, and the formation of defectives such as room, twin can be low, obtains very difficulty of the even Te-Zn-Cd monocrystal material of big area, has limited its application aspect nuclear medicine and Medical CT imaging.Compare with the growing large-size Te-Zn-Cd monocrystal, tellurium zincium vestalium thin-film preparation technology is simple relatively, and cost is low, is prone to realize mass production; Good in thermal property, intensity is high, can realize high-concentration dopant; Because relative proportion surperficial and that interface is shared is bigger in the thin-film material, has special light, electrical effect; Can process required shape and size according to requirement on devices; Can make large size, multilayer and multi-functional rhythmo structure; Can process big sheet/tabular detector, bring wide development space for the design of electro-optical device.
The preparation of tellurium zincium vestalium thin-film is the hot issue that people pay close attention to always, because this has been directly connected to the subsequent applications of material.The preparation method who has reported at present mainly contains chemical deposition, Metalorganic Chemical Vapor Deposition (MOCVD), hot wall epitaxy, molecular beam epitaxy, near space distillation (CSS) method, coevaporation method and magnetron sputtering method etc.These tellurium zincium vestalium thin-films preparation method faces following difficulty: the vapour pressure and the sticking coefficient of the Cd in (1) process of growth, Zn and Te atom are different, can't when guaranteeing prepared film quality, can simply also accurately control the component of tellurium zincium vestalium thin-film; (2) lead because of the p type electricity that has in the tellurium zinc cadmium a little less than the lower Cd room of concentration shows; Intrinsic conductivity is less, and improve the conductivity of tellurium zinc cadmium and mainly realize through mixing, but because the forbidden band broad of tellurium zinc cadmium; Adulterated self compensation effect is more serious, is difficult to realize that the n type mixes; (3) determine by the deposition growing process, generally have a large amount of defectives in the film, cause device to have big dark current.Therefore, exploring suitable tellurium zinc cadmium polycrystal film preparation method, obtain that electric property is good, controllable components and the less tellurium zinc cadmium polycrystal film of defect concentration, is the general difficult problem that present tellurium zinc cadmium polycrystal film preparation faces.
Summary of the invention
The object of the invention is just in order to overcome the shortcoming and defect of above-mentioned prior art; And provide a kind of technology simple; The higher a kind of metallic aluminium of tellurium zincium vestalium thin-film crystalline quality and photo-generated carrier mobility is induced the preparation method of polycrystalline tellurium zincium vestalium thin-film, thereby guarantees film quality and application.
The objective of the invention is to realize through following technical proposal:
A kind of metallic aluminium is induced the preparation method of polycrystalline tellurium zincium vestalium thin-film, and it is undertaken by following step:
(a) with the substrate ito glass with acetone ultrasonic cleaning 15～30 minutes, using mass concentration again is 99.5% ethanol ultrasonic cleaning 15～30 minutes, uses washed with de-ionized water at last 15～30 minutes;
(b) be 1.0 * 10 with a base plate ito glass that a) cleans in vacuum tightness again
-4～9.9 * 10
-4Under the condition of handkerchief, be heated to 100～300 ℃, feed argon gas, when pressure is 3～5 handkerchiefs, carries out backwash and cleaned 10～20 minutes;
(c) be that 60～120 watts, argon flow amount are that 10-50 ml/min, pressure are under the condition of 1～3 handkerchief at the power on the tellurium-zincium-cadmium crystal target, apply the sputtering power build-up of luminance, (b) ito glass of handling surface plating tellurium zinc cadmium pioneer film 10～60 minutes;
(d) be that 60～200 watts, argon flow amount are that 10-50 ml/min, pressure are under the condition of 1～3 handkerchief at the sputtering power on the metallic aluminium target; To the surface sputtering aluminium film of the plating tellurium zinc cadmium pioneer film of (c) 1 ~ 10 minute, make tellurium zinc cadmium pioneer film/the induce stepped construction of metal A l film;
(e) at d) after item makes tellurium zinc cadmium pioneer film/induce the stepped construction of metal A l film, under the argon gas atmosphere protection, under 100～300 ℃ of temperature, heat-treated 0.5～2 hour;
(f) at last with e) after the thermal treatment, with the aluminum erosion removal that the solution of the sodium hydroxide of pH=12 is separated out the surface, acquisition polycrystalline tellurium zincium vestalium thin-film product.
The tellurium-zincium-cadmium crystal of described tellurium-zincium-cadmium crystal target is with the crystal that improves the Bridgman method growth; Described tellurium-zincium-cadmium crystal zinc compositional range is 0.04～0.4; Described aluminium target is that purity is 99.9995% aluminium.
Technical scheme of the present invention is the method for preparing tellurium zinc cadmium polycrystal film that the metallic aluminium inductive technology is combined with the conventional films preparation method.Be the basis with physical vapor deposition and crystallization inducing metal theory,, realize the crystallization inducing metal process, realize the preparation of detector grade tellurium zincium vestalium thin-film through low-temperature heat treatment in preparation tellurium zinc cadmium pioneer film on glass/the induce stepped construction of metal A l film.
Owing to take technique scheme to make technology of the present invention have following advantage and effect:
(a) preparation method of the present invention has not only improved traditional technology, and cost is low, is applicable to large-area film deposition, and sticking power is bigger between film and substrate, and controllability is good, and utilization rate of raw materials is high, and production efficiency height and quality of forming film are good, and industrialization prospect is wide;
(b) tellurium zincium vestalium thin-film of method preparation of the present invention, its Tc is low, and grain-size is big, and carrier mobility is high;
(c) good, controllable components of product electric property and defect concentration are less, and adulterated self compensation effect is relatively good, can realize that the n type mixes.
Description of drawings
The tellurium zincium vestalium thin-film surface topography that Fig. 1 induces the back to obtain for metallic aluminium
The 3 dimensional drawing of Fig. 2 Fig. 1
Fig. 3 induces the preceding tellurium zincium vestalium thin-film surface topography that obtains for metallic aluminium
Fig. 4 is the 3 dimensional drawing of Fig. 3
Fig. 5 induces back tellurium zincium vestalium thin-film and the X ray diffracting spectrum of inducing preceding tellurium zincium vestalium thin-film for metallic aluminium.
Embodiment
Below in conjunction with specific embodiment the present invention is done further explain.
Embodiment 1:
With acetone ultrasonic cleaning 15 minutes, using mass concentration again was 99.5% ethanol ultrasonic cleaning 30 minutes, uses washed with de-ionized water at last 20 minutes, is 1.0 * 10 in vacuum tightness with the substrate ito glass
-4Under the condition of handkerchief, be heated to 300 ℃, feed argon gas, when pressure is 3 handkerchiefs, carries out backwash and cleaned 20 minutes;
At Cd with the growth of improvement Bridgman method
0.9Zn
0.1Power on the Te crystal target was that 60 watts, argon flow amount are that 50 ml/min, pressure are under the condition of 1 handkerchief, applies the sputtering power build-up of luminance, to the ito glass surface plating tellurium zinc cadmium pioneer film handled 10 minutes; Be that sputtering power on 99.9995% the aluminium target is that 60 watts, argon flow amount are that 50 ml/min, pressure are under the condition of 3 handkerchiefs in purity; After the surface sputtering aluminium film of plating tellurium zinc cadmium pioneer film made tellurium zinc cadmium pioneer film/induce the stepped construction of metal A l film in 1 minute; Under the argon gas atmosphere protection; Under 100 ℃ of temperature, heat-treated 2.0 hours, the aluminum erosion removal of with the solution of the sodium hydroxide of pH=12 the surface being separated out at last obtains polycrystalline tellurium zincium vestalium thin-film product.
Embodiment 2:
With acetone ultrasonic cleaning 20 minutes, using mass concentration again was 99.5% ethanol ultrasonic cleaning 20 minutes, uses washed with de-ionized water at last 30 minutes, is 6.0 * 10 in vacuum tightness with the substrate ito glass
-4Under the condition of handkerchief, be heated to 200 ℃, feed argon gas, when pressure is 4 handkerchiefs, carries out backwash and cleaned 15 minutes;
At Cd with the growth of improvement Bridgman method
0.96Zn
0.04Power on the Te crystal target was that 80 watts, argon flow amount are that 30 ml/min, pressure are under the condition of 2 handkerchiefs, applies the sputtering power build-up of luminance, to the ito glass surface plating tellurium zinc cadmium pioneer film handled 40 minutes; Be that sputtering power on 99.9995% the aluminium target is that 100 watts, argon flow amount are that 30 ml/min, pressure are under the condition of 2 handkerchiefs in purity; After the surface sputtering aluminium film of plating tellurium zinc cadmium pioneer film made tellurium zinc cadmium pioneer film/induce the stepped construction of metal A l film in 5 minutes; Under the argon gas atmosphere protection; Under 200 ℃ of temperature, heat-treated 1.0 hours, the aluminum erosion removal of with the solution of the sodium hydroxide of pH=12 the surface being separated out at last obtains polycrystalline tellurium zincium vestalium thin-film product.This tellurium zinc cadmium polycrystal film product can be used as gamma detector.
Embodiment 3:
With acetone ultrasonic cleaning 30 minutes, using mass concentration again was 99.5% ethanol ultrasonic cleaning 15 minutes, uses washed with de-ionized water at last 15 minutes, is 9.9 * 10 in vacuum tightness with the substrate ito glass
-4Under the condition of handkerchief, be heated to 100 ℃, feed argon gas, when pressure is 5 handkerchiefs, carries out backwash and cleaned 10 minutes;
At Cd with the growth of improvement Bridgman method
0.6Zn
0.4Power on the Te crystal target was that 120 watts, argon flow amount are that 10 ml/min, pressure are under the condition of 3 handkerchiefs, applies the sputtering power build-up of luminance, to the ito glass surface plating tellurium zinc cadmium pioneer film handled 10 minutes; Be that sputtering power on 99.9995% the aluminium target is that 200 watts, argon flow amount are that 10 ml/min, pressure are under the condition of 1 handkerchief in purity; After the surface sputtering aluminium film of plating tellurium zinc cadmium pioneer film made tellurium zinc cadmium pioneer film/induce the stepped construction of metal A l film in 10 minutes; Under the argon gas atmosphere protection; Under 300 ℃ of temperature, heat-treated 0.5 hour, the aluminum erosion removal of with the solution of the sodium hydroxide of pH=12 the surface being separated out at last obtains polycrystalline tellurium zincium vestalium thin-film product.\
The tellurium zincium vestalium thin-film of the foregoing description gained is utilized the atomic force microscope observation film surface appearance; The contrast of the tellurium zincium vestalium thin-film surface topography that obtains before inducing tellurium zincium vestalium thin-film surface topography that the back obtains and Fig. 3,4 metallic aluminium to induce through Fig. 1,2 metallic aluminium can be found out; Tellurium zincium vestalium thin-film grain-size before tellurium zincium vestalium thin-film grain-size after the process metallic aluminium is induced will be induced much larger than metallic aluminium, visible metallic aluminium is induced the grain-size that has increased tellurium zincium vestalium thin-film.
Induce the back tellurium zincium vestalium thin-film to survey with X-ray diffractometer respectively metallic aluminium with inducing preceding tellurium zincium vestalium thin-film
Examination; Induce back tellurium zincium vestalium thin-film and the X ray diffracting spectrum of inducing preceding tellurium zincium vestalium thin-film to find out through the metallic aluminium of Fig. 5; Metallic aluminium induces the diffraction intensity of back tellurium zincium vestalium thin-film far above inducing preceding tellurium zincium vestalium thin-film, the crystalline quality of the tellurium zincium vestalium thin-film that visible metallic aluminium induction method improves.
This tellurium zinc cadmium polycrystal film product can be used as X-ray detector, gamma detector.
Claims (4)
1. a metallic aluminium is induced the preparation method of polycrystalline tellurium zincium vestalium thin-film, it is characterized in that it is undertaken by following step:
(a) with the substrate ito glass with acetone ultrasonic cleaning 15～30 minutes, using mass concentration again is 99.5% ethanol ultrasonic cleaning 15～30 minutes, uses washed with de-ionized water at last 15～30 minutes;
(b) be 1.0 * 10 with (a) base plate ito glass that cleans in vacuum tightness again
-4～9.9 * 10
-4Under the condition of handkerchief, be heated to 100～300 ℃, feed argon gas, when pressure is 3～5 handkerchiefs, carries out backwash and cleaned 10～20 minutes;
(c) be that 60～120 watts, argon flow amount are that 10-50 ml/min, pressure are under the condition of 1～3 handkerchief at the power on the tellurium-zincium-cadmium crystal target, apply the sputtering power build-up of luminance, (b) ito glass of handling surface plating tellurium zinc cadmium pioneer film 10～60 minutes;
(d) be that 60～200 watts, argon flow amount are that 10-50 ml/min, pressure are under 1～3 handkerchief condition at the sputtering power on the metallic aluminium target; To (c) plating tellurium zinc cadmium pioneer film surface sputtered aluminum film 1 ~ 10 minute, make tellurium zinc cadmium pioneer film/the induce stepped construction of metal A l film;
(e) after (d) item makes tellurium zinc cadmium pioneer film/induce the stepped construction of metal A l film, under the argon gas atmosphere protection, under 100～300 ℃ of temperature, heat-treated 0.5～2 hour;
(f) at last with after (e) thermal treatment, with the aluminum erosion removal that the solution of the sodium hydroxide of pH=12 is separated out the surface, acquisition polycrystalline tellurium zincium vestalium thin-film product.
2. metallic aluminium according to claim 1 is induced the preparation method of polycrystalline tellurium zincium vestalium thin-film, it is characterized in that: the tellurium-zincium-cadmium crystal of described tellurium-zincium-cadmium crystal target is with the crystal that improves the Bridgman method growth.
3. metallic aluminium according to claim 2 is induced the preparation method of polycrystalline tellurium zincium vestalium thin-film, it is characterized in that: described tellurium-zincium-cadmium crystal zinc compositional range is 0.04～0.4.
4. metallic aluminium according to claim 1 is induced the preparation method of polycrystalline tellurium zincium vestalium thin-film, it is characterized in that: described aluminium target is that purity is 99.9995% aluminium.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108456847A (en) * | 2015-09-14 | 2018-08-28 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detectors on polycrystalline CZT |
| CN110148627A (en) * | 2019-04-28 | 2019-08-20 | 上海大学 | CZT film composite material and preparation method thereof with metal buffer layer |
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| CN1727525A (en) * | 2005-03-04 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of method for preparing polysilicon |
| US20070224788A1 (en) * | 2006-03-23 | 2007-09-27 | Board Of Trustees Of The University Of Arkansas | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon |
| CN101064246A (en) * | 2006-04-27 | 2007-10-31 | 香港科技大学 | Metal-induced crystallization of amorphous silicon and metal removal techniques |
| CN101665905A (en) * | 2009-10-13 | 2010-03-10 | 南京航空航天大学 | Aluminum-induced low temperature preparation method of large grain size polysilicon film |
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2011
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1727525A (en) * | 2005-03-04 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | A kind of method for preparing polysilicon |
| US20070224788A1 (en) * | 2006-03-23 | 2007-09-27 | Board Of Trustees Of The University Of Arkansas | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon |
| US20100139563A1 (en) * | 2006-03-23 | 2010-06-10 | Board Of Trustees Of The University Of Arkansas | Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon |
| CN101064246A (en) * | 2006-04-27 | 2007-10-31 | 香港科技大学 | Metal-induced crystallization of amorphous silicon and metal removal techniques |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108456847A (en) * | 2015-09-14 | 2018-08-28 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detectors on polycrystalline CZT |
| CN108456847B (en) * | 2015-09-14 | 2019-11-01 | 北京师范大学 | The method of DLC films deposited and CZT semiconductor detector on polycrystalline CZT |
| CN110148627A (en) * | 2019-04-28 | 2019-08-20 | 上海大学 | CZT film composite material and preparation method thereof with metal buffer layer |
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