CN102832340B - Phase transition storage unit and manufacture method thereof - Google Patents
Phase transition storage unit and manufacture method thereof Download PDFInfo
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Abstract
The invention provides a phase transition storage unit and a manufacture method thereof. The phase transition storage unit is used for improving the operation speed of a phase transition unit in a phase transition storage; one or more antimony (Sb) film layers is/are embedded into a phase transition storage material layer of the phase transition storage unit so as to quicken the crystallization rate of a phase transition material in a reversible phase transition procedure, wherein the phase transition material can be a dualistic material system such as phase transition materials like Ge-Te, and Sb-Te; can also be a tribasic material system such as phase transition materials like Ge-Sb-Te, Si-Sb-Te, Al-Sb-Te, and Ti-Sb-Te; and the thickness of an induced crystallizing layer Sb film layer is controlled at 1 to 5 nm. Sb atoms can promote the growth of crystalline grains in a crystallizing procedure of the phase transition material, so that a Sb-rich phase transition material system is formed by the embedded Sb film layer and the surrounding phase transition material, and the crystallization rate of the phase transition material in the crystallizing procedure can be quickened, therefore the operation speed of the phase transition storage unit is improved.
Description
Technical field
The present invention relates to a kind of confine structure of antimony Sb material layer induced crystallization for promoting phase transition storage service speed and the manufacture method of device thereof, belonging to microelectronics nano material and device preparation field.
Background technology
Phase change memory technology comes from the research of S.R.Ovshinsky to chalcogenide compound amorphous semiconductor; he reports chalcogenide compound material at beginning of the seventies late 1960s under electric field excites, has transition phenomenon between high and low resistance; propose the conception (Phys.Rev.Lett. that phase-change thin film can be applied to phase change memory medium; 21; 1450 ~ 1453,1968; Appl.Phys.Lett., 18,254 ~ 257,1971).Along with the development of microelectronics technology of preparing and technique since entering 21 century, in device, the size of phase change cells can narrow down to nanometer scale, and phase transition storage has become the research and development focus of each research institution and semiconductor company in the world.Phase transition storage has that integrated level is high, low in energy consumption, read or write speed is fast and the feature such as non-volatile characteristic, has huge advantage with current dynamic random access memory (DRAM), flash memory (FLASH) phase transformation.Phase transition storage not only has broad application prospects as nonvolatile memory on commercial market, and its excellent anti-high and low-temp impacts, radiation-resisting performance has important using value too in military fields such as Aero-Space.From the prediction development evolvement of international semiconductor TIA to novel memory technology, Phase change memory technology is one of with the fastest developing speed in several emerging semiconductor memory technologies, that distance industrialization is nearest technology.Consider the broad prospect of application of phase transition storage, the companies such as Samsung, IBM, Hynix, Micron, Microchip adds the research and development camp of phase transition storage in the world, improving and achieving remarkable achievement in manufacturability in technology.In the International Solid circuit conference (ISSCC 2012) of 2012, Samsung illustrates 20 nanometers, the phase transition storage of 8 Gbit, and this is also the phase transition storage of disclosed heap(ed) capacity at present.
Present stage, a study hotspot of Phase change memory technology is that the Rapid reversible of phase-change material between the high resistant and these two states of low-resistance of crystalline state of amorphous changes.In phase-change material, the crystallization of non-crystalline areas is a step the slowest in reversible transition process, and therefore the speed of this phase transition storage will be determined by this process.In recent years, part has been had to be less than report (Appl.Phys.Lett., 93,043121,2008 of 60 nanoseconds about crystallization rate; Nature Mater.4,347,2005), this fringe time has been the speed of the flash memory of 10 microseconds considerably beyond writing rate.If the performance of nonvolatile memory is further developed, reach the rate of transformation of the similar DRAM about 10 nanoseconds, its business application potential will increase greatly.Therefore promote the crystallization rate of phase-change material further thus improve the service speed of phase transition storage and become more and more important.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of phase-changing memory unit and preparation method thereof, the problem that the service speed for solving phase-change memory storage unit in prior art is not high.
For achieving the above object and other relevant objects, the invention provides a kind of phase-changing memory unit, it comprises phase-change material layers, is provided with the antimony Sb film of at least one deck induced phase transition materials crystallization in described phase-change material layers.
Preferably, intert in this phase-change material layers and be provided with antimony Sb film described in multilayer, the thickness of every layer of antimony Sb film is 1 ~ 5nm.
Preferably, the thickness of described phase-change storage material layer is 40 ~ 100nm.
Preferably, the phase-change material in described phase-change material layers is formed by chalcogenide material; This chalcogenide material comprises the material system of binary and the material system of ternary.
Preferably, identical or different by the chalcogenide material of the separated phase-change material layers of multilayer antimony Sb film.
The present invention also comprises a kind of preparation method of phase-changing memory unit, and the method comprises the following steps:
1) the deposited on substrates phase-change material layers of heating electrode is being prepared;
2) on this phase-change material layers, antimony Sb film is deposited;
3) on described antimony Sb film, another phase-change material layers is deposited;
4) step 2 is repeated) to step 3) n time, n is integer, and n is more than or equal to 1;
5) removal unit divides phase-change material layers, and deposit metal electrodes is also drawn.
Preferably, the substrate preparing heating electrode described in comprises substrate, the bottom electrode layer be positioned on this substrate, be positioned at heating electrode on this bottom electrode layer and surround the dielectric layer of heating electrode; The thickness of described heating electrode is equal to or less than the thickness of dielectric layer.
Preferably, the thickness of described heating electrode is less than the thickness of dielectric layer; Its side wall is retained during depositing phase change material layer in step 1).
Preferably, in described step 1), the deposition of phase-change material layers adopts the alloys target method of cosputtering corresponding simple substance target method or sputtering respective components; The purity of target should be greater than 99.99%.
Preferably, described step 2) in antimony Sb film adopt the method preparation of sputtering Sb simple substance target; The purity of target is greater than 99.99%.
The present invention does not increase the difficulty of preparation technology, and completely compatible with traditional industrial CMOS technology.The antimony Sb material inducing layer implanted can form the phase transformation active region of rich antimony in phase change memory medium, can accelerate the crystalline rate of material, improves the service speed of phase-change memory cell.
Accompanying drawing explanation
A kind of phase-change memory cell preparation process schematic diagram of Fig. 1 (a)-Fig. 1 (f) included by the present invention;
Wherein, Fig. 1 (a) is the step preparing sulfur series compound phase-change material on heating electrode substrate;
Fig. 1 (b) for preparing the step of antimony Sb material film layers on phase-change material layers;
Fig. 1 (c) for preparing the step of sulfur series compound phase-change material on antimony Sb material film layers;
Fig. 1 (d) is for forming the step of the column structure of phase change memory medium;
Fig. 1 (e) is the step of preparation Al upper electrode material;
Fig. 1 (f) is for forming the step of Al upper electrode arrangement;
Wherein, 1.Si wafer substrate; 2.Ti/TiN/Al bottom electrode layer; 3.SiO
2insulating medium layer; 4. the W heating electrode of column; 5. sulfur series compound phase-change material layer; 6. antimony Sb material film layers; 7.Al electrode.
Fig. 2 (a)-Fig. 2 (f) is another kind of phase-change memory cell preparation process schematic diagram;
Fig. 2 (a) for preparing the step of sulfur series compound phase-change material in the groove of heating electrode substrate;
Fig. 2 (b) for preparing the step of antimony Sb material film layers on phase-change material layers;
Fig. 2 (c) for preparing the step of sulfur series compound phase-change material on antimony Sb material film layers;
Fig. 2 (d) is for forming the step of the column structure of phase change memory medium;
Fig. 2 (e) is the step of preparation Al upper electrode material;
Fig. 2 (f) is for forming the step of Al upper electrode arrangement;
Wherein, 1'.Si wafer substrate; 2'.Ti/TiN/Al bottom electrode layer; 3'.SiO
2insulating medium layer; The W heating electrode of 4'. column; 5'. sulfur series compound phase-change material layer; 6'. antimony Sb material film layers; 7'.Al electrode.
Fig. 3 (a)-Fig. 3 (h) is another kind of phase-change memory cell preparation process schematic diagram;
Fig. 3 (a) for preparing the step of sulfur series compound phase-change material in the groove of heating electrode substrate;
Fig. 3 (b) for preparing the step of antimony Sb material film layers on phase-change material layers;
Fig. 3 (c) for preparing the step of sulfur series compound phase-change material on antimony Sb material film layers;
Fig. 3 (d) for preparing the step of antimony Sb material film layers on phase-change material layers;
Fig. 3 (e) for preparing the step of sulfur series compound phase-change material on antimony Sb material film layers;
Fig. 3 (f) is for removing the step of the sulfur series compound phase-change material beyond electrode groove;
Fig. 3 (g) is the step of preparation Al upper electrode material;
Fig. 3 (h) is for forming the step of Al upper electrode arrangement;
Wherein, 1 " .Si wafer substrate; 2 " .Ti/TiN/Al bottom electrode layer; 3 " .SiO
2insulating medium layer; 4 ". the W heating electrode of column; 5 ". sulfur series compound phase-change material layer; 6 ". antimony Sb material film layers; 7 " .Al electrode.
Fig. 4 (a)-4(h) be another kind of phase-change memory cell preparation process schematic diagram;
A () for preparing the step of sulfur series compound phase-change material in the groove of heating electrode substrate;
B () for preparing the step of antimony Sb material film layers on phase-change material layers;
C () for preparing the step of sulfur series compound phase-change material on antimony Sb material film layers;
D () for preparing the step of antimony Sb material film layers on phase-change material layers;
E () for preparing the step of sulfur series compound phase-change material on antimony Sb material film layers;
F () is for removing the step of the sulfur series compound phase-change material beyond electrode groove;
G () is the step of preparation Al upper electrode material;
H () is for forming the step of Al upper electrode arrangement;
Wherein, 10.Si wafer substrate; 20.Ti/TiN/Al bottom electrode layer; 30.SiO
2insulating medium layer; The W heating electrode of 40. columns; 50. sulfur series compound phase-change material layers; 60. antimony Sb material film layers; 70.Al electrode.
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The object of the invention is to the manufacture method proposing a kind of antimony (Sb) material layer induced crystallization confine structure for promoting phase transition storage service speed and device thereof.
The principal character of the lifting of the phase-changing memory unit service speed that the present invention proposes is in the phase-change storage material layer of confine structural phase transition memory cell, to implant one deck or which floor antimony Sb film, to accelerate the crystalline rate of phase-change material in reversible transition process.In phase transition process, the Sb film layer of implantation can be combined the phase-change material system forming rich antimony by processes such as atomic migrations with the phase-change material of surrounding.Because antimony atoms can promote the grain growth of phase-change material in crystallization process, therefore implant one deck or which floor antimony material layer in phase-change material layers after, the crystallization velocity of phase-change material in crystallization process can be accelerated, thus contribute to the service speed improving phase-change memory storage unit.
The phase-change storage material layer that the present invention proposes is formed on previously prepared good heating electrode substrate.Prepare heating electrode and first should prepare layer of dielectric material on Si substrate or other substrate, then in layer of dielectric material, produced the heating electrode of confine structural phase transition memory cell by the integrated circuit CMOS technology (as 45 nanometer technologies) of standard or focused ion beam (FIB) technology, form the nanometer heating electrode of being kept apart by dielectric material.
The processing step implanting the specific implementation of one deck or which floor antimony Sb film in the phase-change storage material layer of confine structural phase transition memory cell that the present invention proposes is as follows:
(1) on the substrate of previously prepared good heating electrode, deposition sulfur series compound phase-change material layer, the thickness of material is depending on the number of plies of phase-change storage material layer, and the thickness superposition summation that should meet each layer chalcogenide compound phase-change storage material should control the scope at 40-100nm.
(2) phase-change material layers deposited in step (1) deposits antimony Sb film, and thickness is 1-5nm.
(3) phase-change material of deposition and the phase-change material same thickness in step (1) on the antimony Sb thin layer deposited in step (2).
(4) number of plies implanting antimony Sb film as required repeats step (2) and step (3) several times.
(5) use micro-nano technology technology, form the construction unit of the sulfur series compound phase-change material of bag stibium containing material induced crystallization layer.
(6) deposition of electrode material thereon again, for the electrode leads to client of confine structural phase transition memory cell electrical testing
(7) re-use micro-nano technology technology, form the graphic structure of electrode material, prepare the phase-changing memory unit that can be used for electrical testing and characterize.
Described backing material is unrestricted, and can be traditional semi-conducting material such as Si wafer, GaAs, also can be the dielectric material such as quartz glass, ceramic substrate or flexible material, metal material.If when adopting metal material to do substrate, substrate directly can do electrode.In the present embodiment, the substrate of described previously prepared good heating electrode comprises substrate, the bottom electrode layer be positioned on this substrate, be positioned at heating electrode on this bottom electrode layer and surround the dielectric layer of heating electrode; The thickness of described heating electrode is equal to or less than the thickness of dielectric layer.
Described electrode material is unrestricted, and can be the conductor materials such as Al, Cu, Ag, W, Pt, Au, its THICKNESS CONTROL be in 100-1000nm scope.
Described dielectric material is unrestricted, and can be the materials such as conventional SiO, SiNx, thickness be in 100-400nm scope.
Described heating electrode material can have the material of certain resistivity for W, Pt, Ti etc., also can be the material such as TiW, TiN, TiAlN with higher electric resistivity, to improve the heating effect of confine structural phase transition memory cell, reduce operation power consumption.
Described phase-change material is unrestricted, can be that all have the chalcogenide compound material of phase-change characteristic, as the Ge-Te series of binary, and the Ge-Sb-Te series of ternary.
The method of described depositing phase change material, antimony (Sb) material film, test electrode is unrestricted can be sputtering method, electron-beam vapor deposition method, Laser deposition method, vapour deposition process and atomic layer deposition method etc.
Described micro-nano technology technology is unrestricted under the prerequisite of the CMOS technology compatibility with industry, can be realized by the method for optical exposure or electron beam exposure, development, stripping method or reactive ion etching method or chemico-mechanical polishing, also can pass through the method realization of focused ion beam (FIB).
Below by by reference to the accompanying drawings, elaborate the manufacturing process of the phase-change memory cell of implantation antimony Sb thin layer provided by the invention further, to contribute to understanding substantive distinguishing features of the present invention and significant progress, but the present invention is only confined to described embodiment by no means.
Embodiment 1(" mushroom-shaped " structure):
(1) by preparing the substrate of heating electrode in succession in acetone and alcoholic solution, under ul-trasonic irradiation, 5 minutes are cleaned respectively; Dry 20 minutes in the environment of 120 ° of C again.Then the chalcogenide compound Ge-Sb-Te thin layer 5 that the method for magnetron sputtering alloys target deposition 30nm is thick is used; During sputtering, base vacuum is better than 1 × 10
5pa, sputtering vacuum is 0.21Pa, and sputtering power is 40W; (Fig. 1 a)
In the present embodiment, described in prepare heating electrode substrate comprise substrate 1, the bottom electrode layer 2 be positioned on this substrate, be positioned at the heating electrode 3 on this bottom electrode layer and surround the dielectric layer 3 of heating electrode; The thickness of described heating electrode 4 equals the thickness of dielectric layer 3.
(2) in same sputtering environment, use the method for magnetron sputtering antimony simple substance target on Ge-Sb-Te thin layer, deposit the thick antimony of 5nm (Sb) material film 6; During sputtering, base vacuum is better than 1 × 10
5pa, sputtering vacuum is 0.21Pa, and sputtering power is 10W; (Fig. 1 b)
(3) the chalcogenide compound Ge-Sb-Te thin layer that the method for magnetron sputtering alloys target deposition 30nm is thick is used again thereon; During sputtering, base vacuum is better than 1 × 10
5pa, sputtering vacuum is 0.21Pa, and sputtering power is 40W; (Fig. 1 c)
(4) use the method for uv-exposure to form the figure of phase change memory medium, use the method for reactive ion etching to etch column structure in phase change memory dielectric layer, etching depth is to reach SiO
2top is as the criterion; (Fig. 1 d)
(5) use the method for ultra vacuum electron beam evaporation to deposit the thick Al electrode material 7 of 300nm more thereon, Al is contacted with the phase-change material of most top layer is intact; (Fig. 1 e)
(6) use uv-exposure to make top electrode figure by lithography in Al top electrode layer, after drying later, use phosphoric acid solution wet etching Al electrode material in the water-bath of 60C, extraction electrode is used for electrical testing and characterizes, thus obtains phase transformation memory device unit; (Fig. 1 f)
(7) phase transformation memory device unit prepared is connected in electrical testing system by probe or wire, load electrical signal, carry out the reading and writing of phase-change memory cell, wipe operation, study the storage characteristics of phase-change memory cell under this structure and the erasable characteristic of circulation etc.
Embodiment 2(restricted type structure):
The top of the heating electrode in embodiment 1 is etched a part downwards, and form the structure of groove, not only can realize phase-change memory cell performance similar to Example 1, and the power consumption of memory cell will reduce greatly, the stability of device also can be improved.
(1) by the groove heating electrode substrate for preparing in succession in acetone and alcoholic solution, under ul-trasonic irradiation, clean 5 minutes respectively; Dry 20 minutes in the environment of 120 ° of C again.Then use the method for chemical vapour deposition (CVD) or ald to deposit the thick chalcogenide compound Ge-Sb-Te thin layer of 20nm in a groove, guarantee that this layer of Ge-Sb-Te film is in groove, and groove is not filled up; (Fig. 2 a)
In the present embodiment, the substrate of described previously prepared good heating electrode comprises substrate 1 ', the bottom electrode layer 2 ' be positioned on this substrate, be positioned at heating electrode 4 ' on this bottom electrode layer and surround the dielectric layer 3 ' of heating electrode; The thickness of described heating electrode 4 ' is less than the thickness of dielectric layer 3 '.So form groove heating electrode.
(2) in same environment, use the method for chemical vapour deposition (CVD) or ald at Ge-Sb-Te thin layer 5 ' the antimony Sb film 6 ' that above deposition 5nm is thick, guarantee that groove fills up by this layer of Sb film not yet; (Fig. 2 b)
(3) use the chalcogenide compound Ge-Sb-Te thin layer that the method for chemical vapour deposition (CVD) or ald deposition 40nm is thick more thereon, guarantee that the remainder of electrode groove can fill up by this layer of Ge-Sb-Te film; (Fig. 2 c)
(4) use the method for uv-exposure to form the figure of phase change memory medium, use the method for reactive ion etching to etch column structure in phase change memory dielectric layer, etching depth is to reach SiO
2top is as the criterion; (Fig. 2 d)
(5) use the method for ultra vacuum electron beam evaporation to deposit the thick Al electrode material 7 ' of 300nm more thereon, Al is contacted with the phase-change material of most top layer is intact; (Fig. 2 e)
(6) use uv-exposure to make top electrode figure by lithography in Al top electrode layer, after drying later, use phosphoric acid solution wet etching Al electrode material in the water-bath of 60C, extraction electrode is used for electrical testing and characterizes, thus obtains phase transformation memory device unit; (Fig. 2 f)
(7) phase transformation memory device unit prepared is connected in electrical testing system by probe or wire, load electrical signal, carry out the reading and writing of phase-change memory cell, wipe operation, study the storage characteristics of phase-change memory cell under this structure and the erasable characteristic of circulation etc.
Embodiment 3(restricted type structure, multilayer Sb film inducing layer):
The thickness of every layer of phase-change material of deposition in embodiment 2 is reduced, and increases the number of plies of the Sb film inducing layer implanted, phase change memory medium is inserted completely in electrode groove, the service speed of phase-change memory cell and the stability of device can be improved further.
(1) by the groove heating electrode substrate for preparing in succession in acetone and alcoholic solution, under ul-trasonic irradiation, clean 5 minutes respectively; Dry 20 minutes in the environment of 120 ° of C again.Then use the method for chemical vapour deposition (CVD) or ald to deposit the thick chalcogenide compound Ge-Sb-Te thin layer of 10nm in a groove, guarantee that this layer of Ge-Sb-Te film is in groove, and groove is not filled up; (Fig. 3 a)
In the present embodiment, the substrate of described previously prepared good heating electrode comprises substrate 1 ", the bottom electrode layer 2 be positioned on this substrate ", the heating electrode 4 " and surrounding dielectric layer 3 of heating electrode " be positioned on this bottom electrode layer; The thickness of described heating electrode is less than the thickness of dielectric layer.So form groove heating electrode.
(2) in same environment, use the method for chemical vapour deposition (CVD) or ald at Ge-Sb-Te thin layer 5 " above depositing the thick antimony Sb film 6 of 5nm ", guarantee that groove fills up by this layer of Sb film not yet; (Fig. 3 b)
(3) use the chalcogenide compound Ge-Sb-Te thin layer that the method for chemical vapour deposition (CVD) or ald deposition 10nm is thick more thereon, guarantee that groove fills up by this layer of Ge-Sb-Te film not yet; (Fig. 3 c)
(4) use the method for chemical vapour deposition (CVD) or ald on Ge-Sb-Te thin layer, deposit the thick antimony Sb film of 5nm more thereon, guarantee that groove fills up by this layer of Sb film not yet; (Fig. 3 d)
(5) use the chalcogenide compound Ge-Sb-Te thin layer that the method for chemical vapour deposition (CVD) or ald deposition 20nm is thick more thereon, guarantee that the remainder of electrode groove can fill up by this layer of Ge-Sb-Te film; (Fig. 3 e)
(6) use the method for reactive ion etching or chemico-mechanical polishing to be removed by the phase-change material exceeding electrode groove part, the degree of depth of etching or polishing is to reach SiO
2top is as the criterion; (Fig. 3 f)
(7) method of ultra vacuum electron beam evaporation is used to deposit the thick Al electrode material 7 of 300nm more thereon ", Al is contacted with the phase-change material of most top layer is intact; (Fig. 3 g)
(8) use uv-exposure to make top electrode figure by lithography in Al top electrode layer, after drying later, use phosphoric acid solution wet etching Al electrode material in the water-bath of 60C, extraction electrode is used for electrical testing and characterizes, thus obtains phase transformation memory device unit; (Fig. 3 h)
(9) phase transformation memory device unit prepared is connected in electrical testing system by probe or wire, load electrical signal, carry out the reading and writing of phase-change memory cell, wipe operation, study the storage characteristics of phase-change memory cell under this structure and the erasable characteristic of circulation etc.
Embodiment 4(restricted type structure, U-shaped phase-change memory cell, multilayer Sb film inducing layer):
The side wall of every layer of phase-change material of deposition in embodiment 3 is remained, forms U-shaped phase-change memory cell, with the stability of the service speed and device that improve phase-change memory cell further.
(1) by the groove heating electrode substrate for preparing in succession in acetone and alcoholic solution, under ul-trasonic irradiation, clean 5 minutes respectively; Dry 20 minutes in the environment of 120 ° of C again.Then use the method for chemical vapour deposition (CVD) or ald to deposit the thick chalcogenide compound Ge-Sb-Te thin layer of 10nm in a groove, guarantee that this layer of Ge-Sb-Te film is in groove, and groove is not filled up; (Fig. 4 a)
In the present embodiment, the substrate of described previously prepared good heating electrode comprises substrate 10, the bottom electrode layer 20 be positioned on this substrate, be positioned at heating electrode 40 on this bottom electrode layer and surround the dielectric layer 30 of heating electrode; The thickness of described heating electrode is less than the thickness of dielectric layer 30.So form groove heating electrode.
(2) in same environment, use the method for chemical vapour deposition (CVD) or ald on Ge-Sb-Te thin layer 50, deposit the thick antimony Sb film 60 of 5nm, guarantee that groove fills up by this layer of Sb film not yet; (Fig. 4 b)
(3) use the chalcogenide compound Ge-Sb-Te thin layer that the method for chemical vapour deposition (CVD) or ald deposition 10nm is thick more thereon, guarantee that groove fills up by this layer of Ge-Sb-Te film not yet; (Fig. 4 c)
(4) use the method for chemical vapour deposition (CVD) or ald on Ge-Sb-Te thin layer, deposit the thick antimony Sb film of 5nm more thereon, guarantee that groove fills up by this layer of Sb film not yet; (Fig. 4 d)
(5) use the chalcogenide compound Ge-Sb-Te thin layer that the method for chemical vapour deposition (CVD) or ald deposition 20nm is thick more thereon, guarantee that the remainder of electrode groove can fill up by this layer of Ge-Sb-Te film; (Fig. 4 e)
(6) use the method for reactive ion etching or chemico-mechanical polishing to be removed by the phase-change material exceeding electrode groove part, the degree of depth of etching or polishing is to reach SiO
2top is as the criterion; (Fig. 4 f)
(7) use the method for ultra vacuum electron beam evaporation to deposit the thick Al electrode material 70 of 300nm more thereon, Al is contacted with the phase-change material of most top layer is intact; (Fig. 4 g)
(8) use uv-exposure to make top electrode figure by lithography in Al top electrode layer, after drying later, use phosphoric acid solution wet etching Al electrode material in the water-bath of 60C, extraction electrode is used for electrical testing and characterizes, thus obtains phase transformation memory device unit; (Fig. 4 h)
(9) phase transformation memory device unit prepared is connected in electrical testing system by probe or wire, load electrical signal, carry out the reading and writing of phase-change memory cell, wipe operation, study the storage characteristics of phase-change memory cell under this structure and the erasable characteristic of circulation etc.
As can be seen from above embodiment, inner characteristic of the present invention is in traditional phase-change memory cell structure, implants the antimony Sb thin layer of one deck 1-5 nanometer thickness between phase-change material.This improves the difficulty not increasing preparation technology, and completely compatible with traditional industrial CMOS technology.Antimony (Sb) the material inducing layer implanted can form the phase transformation active region of rich antimony in phase change memory medium, can accelerate the crystalline rate of material, improves the service speed of phase-change memory cell.
In sum, the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (6)
1. a phase-changing memory unit, it comprises Ge-Sb-Te phase-change material layers, it is characterized in that, the interspersed antimony Sb film being provided with the crystallization of multilayer induced phase transition materials in described Ge-Sb-Te phase-change material layers;
The thickness of every layer of antimony Sb film is 1 ~ 5nm;
The gross thickness of described phase-change material layers is 40 ~ 100nm.
2. a preparation method for phase-changing memory unit, is characterized in that, the method comprises the following steps:
1) the deposited on substrates Ge-Sb-Te phase-change material layers of heating electrode is being prepared;
2) on this Ge-Sb-Te phase-change material layers, antimony Sb film is deposited;
3) on described antimony Sb film, another Ge-Sb-Te phase-change material layers is deposited;
4) step 2 is repeated) to step 3) n time, n is integer, and n is greater than 1;
5) remove part Ge-Sb-Te phase-change material layers, deposit metal electrodes is also drawn.
3. the preparation method of phase-changing memory unit according to claim 2, it is characterized in that, described in prepare heating electrode substrate comprise substrate, the bottom electrode layer be positioned on this substrate, be positioned at the heating electrode on this bottom electrode layer and surround the dielectric layer of heating electrode; The thickness of described heating electrode is equal to or less than the thickness of dielectric layer.
4. the preparation method of phase-changing memory unit according to claim 3, is characterized in that, the thickness of described heating electrode is less than the thickness of dielectric layer.
5. the preparation method of phase-changing memory unit according to claim 2, is characterized in that, described step 1) in Ge-Sb-Te phase-change material layers deposition adopt cosputtering corresponding simple substance target method or sputtering respective components alloys target method; The purity of target should be greater than 99.99%.
6. the preparation method of phase-changing memory unit according to claim 2, is characterized in that, described step 2) in antimony Sb film adopt the method preparation of sputtering Sb simple substance target; The purity of target is greater than 99.99%.
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| CN103898452B (en) * | 2012-12-26 | 2017-03-15 | 北京有色金属研究总院 | A kind of phase change memory Sb Te W phase transformation targets and preparation method thereof |
| CN104733610B (en) * | 2013-12-23 | 2017-12-15 | 杭州华为数字技术有限公司 | Metal-doped germanium telluro resistance-change memory material and preparation method and resistive element device |
| CN105470386A (en) * | 2014-09-05 | 2016-04-06 | 中芯国际集成电路制造(上海)有限公司 | Phase change memory and manufacturing method thereof and electronic device |
| CN109065708A (en) * | 2018-07-06 | 2018-12-21 | 东华大学 | A kind of bilayer phase-change material, phase-changing memory unit and preparation method thereof |
| CN110931635B (en) * | 2019-10-28 | 2021-09-14 | 华中科技大学 | Low-density-change superlattice phase change film, phase change memory and preparation method of phase change film |
| CN113241405B (en) * | 2021-04-14 | 2023-04-25 | 华中科技大学 | Method for inducing crystallization of chalcogenide phase change material and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1252885A (en) * | 1997-04-16 | 2000-05-10 | 旭化成工业株式会社 | Process for producing optical information recording medium and optical information recording medium produced by the process |
| CN102005466A (en) * | 2010-09-28 | 2011-04-06 | 中国科学院上海微系统与信息技术研究所 | Phase change memory structure with low-k medium heat insulating material and preparation method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004164686A (en) * | 2002-11-08 | 2004-06-10 | Ricoh Co Ltd | Optical information recording medium and its manufacturing method |
| KR20050117346A (en) * | 2004-06-10 | 2005-12-14 | 엘지전자 주식회사 | Phase change type optical disk using blue laser |
-
2012
- 2012-09-11 CN CN201210335211.1A patent/CN102832340B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1252885A (en) * | 1997-04-16 | 2000-05-10 | 旭化成工业株式会社 | Process for producing optical information recording medium and optical information recording medium produced by the process |
| CN102005466A (en) * | 2010-09-28 | 2011-04-06 | 中国科学院上海微系统与信息技术研究所 | Phase change memory structure with low-k medium heat insulating material and preparation method |
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