CN102820420A - Regulating method of time dependent dielectric breakdown of BST (Barium Strontium Titanate) thin film - Google Patents
Regulating method of time dependent dielectric breakdown of BST (Barium Strontium Titanate) thin film Download PDFInfo
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- CN102820420A CN102820420A CN2012102844246A CN201210284424A CN102820420A CN 102820420 A CN102820420 A CN 102820420A CN 2012102844246 A CN2012102844246 A CN 2012102844246A CN 201210284424 A CN201210284424 A CN 201210284424A CN 102820420 A CN102820420 A CN 102820420A
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Abstract
The invention relates to a regulating method of time dependent dielectric breakdown of a BST (Barium Strontium Titanate) thin film, and belongs to the technical field of electron components. The regulating method of time dependent dielectric breakdown of the BST thin film comprises the steps of: A, grounding an input electrode of a bi-capacitor structure with the BST thin film; and B, applying a square wave bias voltage to another input electrode. According to the regulating method of time dependent dielectric breakdown of the BST thin film provided by the invention, a pyroelectric infrared detector is maintained to work in a comparatively stable leakage current state, and the reliability of the apparatus is not affected.
Description
Technical field
The invention belongs to technical field of electronic components, particularly a kind of pyroelectric infrared detector of high reliability.
Background technology
Barium strontium titanate ((Ba, Sr) TiO
3Being called for short BST) electric heating film is a kind of in the ferroelectric material; Have unique optics and electrology characteristic, like piezoelectric effect, pyroelectric effect, photoelectric effect; Nonlinear optical effect and ferroelectricity are with a wide range of applications in high-tech sectors such as microelectronics, integrated optics and optoelectronics.At present, utilize characteristics such as the excellent electricity of BST electric heating film, light, various countries study BST electric heating film non-refrigerated infrared detector spare just energetically.The application of these devices has covered the numerous areas from civilian to national defence.Bst thin film is operated under the direct current biasing electric field, inevitably will produce leakage current, and it is one of main noise of bst thin film Infrared Detectors.Especially the time breakdown that increases with the increase that is biased voltage time of the leakage current of bst thin film (Time Dependent Dielectric Breakdown is called for short TDDB) phenomenon can have a strong impact on the reliability of detector.
The TDDB phenomenon is as shown in Figure 1, and along with the increase that bst thin film is biased voltage time, leakage current has different regularity of change.The catastrophe point that two leakage currents are arranged in the drawings is designated as t respectively
0And t
1At t
0Before, leakage current in time increase and reduce, at t
0The time reach minimum value; Then, leakage current in time increase and increase, to t
1The time leakage current increase suddenly sharply.At t
0Near, through other means, can make the leakage current of bst thin film can return to initial condition.At t
1Before, bst thin film still has dielectric, pyroelectric property; t
1Afterwards, bst thin film does not have dielectric, pyroelectric property, and promptly BST is breakdown.Wherein, t
0And t
1Between state be called soft breakdown, t
1State afterwards is called hard breakdown.
For the bst thin film pyroelectric infrared detector, leakage current is one of topmost noise of detector.The bst thin film leakage current increases, and the detector noise will increase, and device performance will reduce, thus the situation appearance that should definitely avoid leakage current to increase, otherwise the reliability of detector will be affected.Therefore, according to the mechanism of bst thin film soft breakdown, hard breakdown, find a kind of effective regulate and control method, meaning is very great.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of leakage current of bst thin film that can make to remain on steady state, avoids the regulate and control method of the bst thin film time breakdown that TDDB takes place.
The technical scheme that the present invention solve the technical problem employing is, the regulate and control method of bst thin film time breakdown comprises the steps: A, will have an input electrode ground connection of two capacitance structures of bst thin film; B, another input electrode is applied the square wave bias voltage.
Say that further among the said step B, the bias voltage that applies is a symmetrical square wave.The amplitude of square wave is ± 0.5 ~ 20V, and the cycle is 10 ~ 1000s, and duty ratio is 30 ~ 80%.
Further, the amplitude of square wave is ± 6V, and the cycle is 200s, and duty ratio is 50%.
Comprise 3 electrodes in the of the present invention pair of capacitance structure, one of them is a public electrode, and two other electrode is called input electrode.
The invention has the beneficial effects as follows:
(1) input electrode 4 at film bottom, identical as the substrate of bst thin film growth with the underlayer electrode structure of original employing, can not change the preparation technology of hearth electrode, can not change the preparation technology of bst thin film.The preparation technology of two parts bottom electrode is identical, and the technology of the bst thin film of growing above that is identical, and the two-part bottom electrode of the present invention/the BST interface state is identical, and two-part leakage current is identical with the TDDB characteristic under the positive and negative bias voltage.
(2) public electrode 3 serves as public electrode and infrared absorption layer in the top of film, can not reduce the absorption to infrared signal, can guarantee the INFRARED ABSORPTION performance identical with single capacitor.The bias voltage at input electrode 4 two ends is increased by 1 times, just can keep on the BST the electric field that is biased constant, the pyroelectric property of bst thin film is constant.
(3) two capacitance methods are simple, do not change the treatment circuit of device architecture, processing technology and BST Pyroelectric Thin Film Infrared Detector.The adjustment of dynamic bias voltage through external circuit that is added on the input electrode 4 just can realize, need not circuit is done significantly adjustment.
Description of drawings
Fig. 1 is a bst thin film leakage current curve over time;
Fig. 2 is the two capacitance structure sketch mapes of bst thin film of the present invention;
Fig. 3 is two added dynamic bias voltage figure of electric capacity BST sample among the present invention;
Fig. 4 is that following pair of electric capacity bst thin film space charge of dynamic bias voltage changes sketch map;
Wherein, Fig. 4 (a) is the change in electrical charge sketch map of 0 ~ 100s, and Fig. 4 (b) is the change in electrical charge sketch map of 100 ~ 200s, and Fig. 4 (c) is the change in electrical charge sketch map of 200 ~ 300s.
Fig. 5 is the leakage current curve chart over time of two electric capacity bst thin films.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
As shown in Figure 2, of the present invention pair of capacitance structure comprises: public electrode 3, as the positive and negative electrode of input electrode 4, be clipped in the bst thin film between public electrode 3 and the input electrode, and bst thin film comprises 1 district and 2 districts.Wherein public electrode 3 is the NiCr electrode, in the top of film, serves as public electrode and infrared absorption layer; Input electrode 4 (positive and negative electrode) is the Pt electrode, at film bottom, and as the substrate of bst thin film growth.
As shown in Figure 3 to the added dynamic bias voltage of two electric capacity BST samples among the present invention, its amplitude is ± 6V, and the cycle is 200s, and duty ratio is 50%.1 district's Pt electrode is connect the input pulse bias voltage, 2 district Pt electrode groundings.As shown in Figure 4, when first 100s added positive 6V bias voltage, electronics injected bst thin film from 2 district Pt electrodes, and the formation space charge region in 2 districts is shown in Fig. 4 (a).When second 100s add-during the 6V bias voltage, electronics injects bst thin film from 1 district Pt electrode, the formation space charge region in 1 district; Simultaneously, the prisoner that takes off of trapped electron takes place in the space charge region that 2 districts form under the reversed electric field effect, and such 2 districts just return to initial condition, shown in Fig. 4 (b).When the 3rd 100s added positive 6V bias voltage, electronics injected bst thin film from 2 district Pt electrodes, the formation space charge region in 2 districts; Simultaneously, the prisoner that takes off of trapped electron takes place in the space charge region that 1 district forms under the reversed electric field effect, and such 1 district just returns to initial condition, shown in Fig. 4 (c).So back and forth, the bst thin film in 1,2 liang of district can both remain on initial condition, and leakage current just can not change in time.
Fig. 5 is under above-mentioned dynamic bias voltage, and the leakage current of two electric capacity bst thin films is curve chart over time.The time of test is 100000s, and in this scope, the fluctuation of the leakage current of bst thin film is little, and soft breakdown and hard breakdown do not take place.Explain and adopt two capacitance structures of bst thin film and dynamic bias voltage method can keep the BST pyroelectric infrared detector to be operated under the more stable leakage current state, can not influence the reliability of device.
The amplitude of the square wave of present embodiment is ± 0.5V, and the cycle is 10s, and duty ratio is 30%.
The amplitude of the square wave of present embodiment is ± 20V, and the cycle is 1000s, and duty ratio is 80%.
Claims (4)
1.BST the regulate and control method of film time breakdown is characterized in that, comprises the steps:
A, will have an input electrode ground connection of two capacitance structures of bst thin film;
B, another input electrode is applied the square wave bias voltage.
2. the regulate and control method of bst thin film time breakdown as claimed in claim 1 is characterized in that, among the said step B, the bias voltage that applies is a symmetrical square wave.
3. the regulate and control method of bst thin film time breakdown as claimed in claim 1 is characterized in that, the amplitude of said square wave is ± 0.5 ~ 20V, and the cycle is 10 ~ 1000s, and duty ratio is 30 ~ 80%.
4. the regulate and control method of bst thin film time breakdown as claimed in claim 1 is characterized in that, the amplitude of said square wave is ± 6V, and the cycle is 200s, and duty ratio is 50%.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784291A (en) * | 2016-11-18 | 2017-05-31 | 南方科技大学 | Refrigeration device and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060208823A1 (en) * | 2005-03-21 | 2006-09-21 | Hunt Andrew T | Tunable dielectric radio frequency microelectromechanical system capacitive switch |
-
2012
- 2012-08-10 CN CN2012102844246A patent/CN102820420A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060208823A1 (en) * | 2005-03-21 | 2006-09-21 | Hunt Andrew T | Tunable dielectric radio frequency microelectromechanical system capacitive switch |
Non-Patent Citations (1)
| Title |
|---|
| 吴传贵: "BST热释电薄膜材料及在红外探测器中的应用基础研究", 《中国博士学位论文全文数据库信息科技辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784291A (en) * | 2016-11-18 | 2017-05-31 | 南方科技大学 | Refrigeration device and preparation method thereof |
| CN106784291B (en) * | 2016-11-18 | 2023-08-18 | 南方科技大学 | Refrigerating device and preparation method thereof |
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Application publication date: 20121212 |