CN102811855B - There is profile and shape the thin film photovoltaic module of degassing base material - Google Patents

There is profile and shape the thin film photovoltaic module of degassing base material Download PDF

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Publication number
CN102811855B
CN102811855B CN201080065597.8A CN201080065597A CN102811855B CN 102811855 B CN102811855 B CN 102811855B CN 201080065597 A CN201080065597 A CN 201080065597A CN 102811855 B CN102811855 B CN 102811855B
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base material
busbar
module
depression
orientation
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CN102811855A (en
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弗朗克斯·安德烈·柯兰
斯蒂芬·约瑟夫·诺顿
卡恩·杜·特兰
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Solutia Inc
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Solutia Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
    • B32B17/10036—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising two outer glass sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10761—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing vinyl acetal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention provides a kind of thin film photovoltaic module with the protectiveness base material such as glass, and described protectiveness base material is shaped to define the space enabling air to avoid being captured by the busbar in thin-film photovoltaic device by profile.Described protectiveness base material is carried out profile and shapes degassing and the lamination being greatly promoted described module, because this processes reduce or eliminates air capacity captured during being laminated.The photovoltaic module of the present invention can be processed, and makes the waste caused by the lamination problem that deaerates and be correlated with minimize.

Description

There is profile and shape the thin film photovoltaic module of degassing base material
Technical field
The invention belongs to the field of thin film photovoltaic module, specifically, the invention belongs to applicable The field of the thin film photovoltaic module of polymeric layer and photovoltaic devices it is incorporated on film photovoltaic base material.
Background technology
There is two kinds of conventional photovoltaic (solar energy) module at present.The photovoltaic module profit of the first type Utilize with semiconductor crystal wafer be deposited on applicable base material as base material, the photovoltaic module of the second type Semiconductive thin film.
The photovoltaic module of semiconductor crystal wafer type generally includes crystalline silicon wafer.Crystalline silicon wafer is commonly used In various solid-state electronic devices, such as computer memory chips and computer processor.Although it is useful, This conventional design manufacturing cost is relatively costly and is difficult in non-standard application use.
On the other hand, film photovoltaic can comprise one or more routine on applicable base material and partly leads Body, such as non-crystalline silicon.With wafer application (wherein with complicated and fine manufacturing technology from silicon ingot cuts Wafer) different, film photovoltaic is to use such as sputter film, physical vapour deposition (PVD) (PVD) or chemistry gas The relatively simple deposition technique of deposition (CVD) is formed mutually.
Although film photovoltaic selects just to become increasingly to have feasible as the practical photovoltaic of wafer photovoltaic Property, but also need to the improvement in terms of efficiency, ruggedness and manufacturing expense technically.
The problem the most obstinate run in manufacturing thin film photovoltaic module is, converges when existing During stream bar, polymeric layer generally provides with sheet form, is at this moment difficult to obtain acceptable polymeric layer Lamination.Fail in the fabrication process correctly busbar district degassing (de-air) of module to be frequently resulted in Product cannot use.
Correspondingly, what is desired is that in the art for producing easily fabricated and stable thin The improved method of film photovoltaic module and structure.
Summary of the invention
The present invention provides a kind of thin film photovoltaic module with the protectiveness base material such as glass, wherein should The profile of protectiveness base material is formed to be enabled air to avoid by confluxing in thin-film photovoltaic device to define The space of bar capture.The profile of protectiveness base material shapes degassing and the lamination being greatly promoted module, Because this air capacity captured during reduce or eliminating lamination.
The photovoltaic module of the present invention can be located with the minimal waste that degassing and relevant lamination problem cause Reason.
Accompanying drawing explanation
Fig. 1 represents the constructed profile of thin film photovoltaic module.
Detailed description of the invention
The thin-film photovoltaic device of the present invention utilizes protectiveness base material, and this protectiveness base material has from plane Status maintenance makes to be formed on it surface of multiple profiles into, and it is close that these profiles are used for guiding air to leave The capture point of the projection busbar of bottom photovoltaic devices.
In Fig. 1, substantially 10 places illustrate that the schematic diagram of the population structure of thin film photovoltaic module represents.Such as figure Shown in 1, thin-film photovoltaic device 14 is formed on the substrate 12, substrate 12 can be such as glass or Plastics.Protectiveness base material 18 and polymeric layer 16 are attached to photovoltaic devices 14.As the most more Describing in detail, polymeric layer 16 can include any applicable polymer.
Previously provided and included making with all trials of the polymeric layer of acceptable mode sealed photovoltaic module With there is relatively high flow of polymeric material, using relatively thick polymer sheet, use relatively High lamination pressure and temperature and increase total lamination times.But, each of these solutions All present multiple shortcoming.The profile Shaped substrates of the present invention overcomes lamination degassing problem.
As used here, " profile shaping " base material refers to the surface regular surfaces at base material of base material Under define the base material of depression of patterning.For the planar substrate of the most smooth glass plate, profile becomes Shape can include forming groove, passage, hole or the depression of other anticipations.
As used herein, " orientation depression " is to play the sky guided around busbar during being laminated Gas thus reduce or prevent any depression of effect of bubble formation in lamination.As it is used herein, Orientation depression can by directly across busbar below or above or by by air from busbar Route guiding guides the air around busbar to the space between busbar.
The profile of the present invention shapes and is not limited to any specific section shape, and can use and help Any applicable form being laminated completely in the assembly of module.Additionally, profile can be towards any side To being suitable for the specific photovoltaic devices that used, in order to provide orientation depression, and can be with such as Parallel, diagonal or vertical disposition are formed, and can be identical or different on base material The degree of depth and shape.
In various embodiments, profile shapes to use and is formed across entirety or the local of base material The form of one or more grooves.So, the lamination of the thin film photovoltaic module of the present invention can be real The degassing around busbar now greatly improved and sealing, and without relatively thick polymeric layer, Relatively long lamination times or of a relatively high treatment temperature and pressure.
The profile of the present invention shapes protectiveness base material and can be formed in any suitable manner.Various In embodiment, such as, by with such as diamond-coated drill milling or by with stone or Buddha's warrior attendant Stone coating abrasion wheel grinding forms profile, in addition with other known technology, as sandblasting and chemistry, Water or laser-induced thermal etching etc..
Profile can be formed, from forming the simple pattern of straight depression to comprising by any applicable pattern The more complicated pattern of any desired profile combination.
Profile can be formed by any desired depth and width according to application.In various embodiments, Profile has 0.0254 to 0.508 millimeter (0.001 to 0.020 inch), from 0.127 to 0.305 milli Rice (0.005 to 0.012 inch), from .0254 to 0.229 millimeter (0.001 to 0.009 inch) or from The degree of depth of 0.0254 to 0.127 millimeter (0.001 to 0.005 inch).The profile with the above-mentioned degree of depth can To have by any one in any combination of following width: 0.1 to 15 millimeter, 0.2 to 10 milli Rice or 3 to 6 millimeters.
In various embodiments of the present invention, base material shapes with profile in the one side of Polymer layer contact The percentage ratio of surface area can be 0.01 to 70%, 0.025 to 50% or 0.1 to 30%.Respectively Plant in embodiment, the percentage ratio of the surface area that base material shapes with profile in the one side of Polymer layer contact Can be 0.5 to 70%, 1 to 70%, 3 to 70%, 5 to 70%, 10 to 70% or 20 to 70%。
In various embodiments, the amount that profile shapes is pressed hundred of the common bus length above profile Proportion by subtraction is measured, and does not consider that profile exceeds the length that busbar extends.In various embodiments, The part of the common bus length above profile is 0.1 to 70%, the 0.2 to 50% of common bus length Or 0.4 to 30%.In various embodiments, the part of the common bus length above profile is total The 0.5 to 70% of bus bar length, 1 to 70%, 3 to 70%, 5 to 70%, 10 to 70% or 20 to 70%.
For any given base material, it is provided that the combination of any profile, including having different section Profile with the degree of depth.Can be formed on a base material or two base materials are respectively formed on profile.
In various embodiments of the present invention, the thickness of the polymeric layer used can be less than 2.29 Millimeter (0.090 inch), 1.143 millimeters (0.045 inch), 0.762 millimeter (0.030 inch) or 0.381 Millimeter (0.015 inch).In yet another embodiment, specifically during niproll non-autoclave, Thickness can be used to be less than 0.508 millimeter (0.020 inch) or thickness between 0.254 and 0.508 millimeter Polymeric layer between (0.010 inch and 0.020 inch).Applying for routine, normal conditions are not So, this thin layer is used to will be unable to the lamination succeeded in routine is applied.
In the other embodiment of the present invention, in the lamination process using vacuum outgas, use this The base material that the profile of invention shapes.Such as, vacuum outgas can be vacuum ring and vacuum bag degassing, Both use autoclave and the most do not use autoclave.In these embodiments, it is different from clamping In roller embodiment like that, air removes radially from central point from lamination, and therefore Air must be extracted around the different parts of busbar.
Substrate
The substrate of the present invention as shown in element 12 in Fig. 1 can be to form the present invention on it Any applicable base material of photovoltaic devices.Example includes but not limited to produce " rigidity " thin-film module Glass and rigidity plastics glazing material, and the such as polyester fiber producing " flexible " thin-film module is (poly- Ethylene glycol terephthalate), polyimides, the thin plastic of fluoropolymer etc..Generally preferably , this substrate allows the most of incident radiation in 350 to 1,200 nanometer range to be transmitted, but It would be recognized by those skilled in the art that change is possible, enter including light transmission photovoltaic base material The change of photovoltaic devices.
Thin-film photovoltaic device
The thin-film photovoltaic device of the present invention as shown in element 14 in Fig. 1 is directly formed on substrate. Typical device manufacture includes depositing first conductive layer, etches the first conductive layer, deposits and etch half Conductor layer, deposit second conductive layer, etching the second conductive layer and applying are confluxed conductor and protective layer, Concrete condition is depending on the application.It is alternatively possible on substrate between the first conductive layer and substrate Form electric insulation layer.This optional layer can be such as silicon layer.
It would be recognized by those skilled in the art that the described above of device manufacture is only side known to one Method and be only one embodiment of the present of invention.Many other types of thin-film photovoltaic device is at this In the range of invention.The example of forming method and device include american documentation literature 2003/0180983, 7,074,641、6,455,347、6,500,690、2006/0005874、2007/0235073、7,271,333 With 2002/0034645 described in those, its relevant manufacture and device part are fully incorporated herein.
The various assemblies of this thin-film photovoltaic device can be formed by any applicable method.Respectively Plant in embodiment, it is possible to use chemical gaseous phase deposits (CVD), physical vapour deposition (PVD) (PVD) and/or spatters Plating.
Above-described two conductive layers are used as to carry the electricity of the electric current that semi-conducting material produces between two parties Pole.One of them of electrode is typically transparent, to allow solar radiation to arrive semi-conducting material. Certainly, two conductors can be all transparent, or one of them conductor can be reflexive, from And will be returned in semi-conducting material by the luminous reflectance of semi-conducting material.Conductive layer can comprise appoints The conductive oxide material what is suitable for, such as stannum oxide or zinc oxide, or, if whether transparent not Important, such as " back side " electrode, then can use metal or alloy layer, as comprised aluminum or silver Those layers.In other embodiments, can be by metal oxide layer and metal layer combination to be formed Electrode, and can be by doped with boron in metal oxide layer or aluminum and use low-pressure chemical vapor deposition Deposit this metal oxide layer.These conductive layers can be such as from 0.1 to 10 micron of thickness.
The photovoltaic district of this thin-film photovoltaic device can comprise the hydrogen in such as conventional PIN or PN Change non-crystalline silicon.This silicon the most the largest of about 500 nanometer thickness, generally comprises and has 3 to 25 and receive The p layer of meter Hou Du, the i layer of 20 to 450 nanometers and the n-layer of 20 to 40 nanometers.Deposition can To implement by carrying out glow discharge in the mixture of silane or silane and hydrogen, the such as U.S. is special Described in profit No.4,064,521.
Or, semi-conducting material can be microcrystal silicon, cadmium telluride (CdTe or CdS/CdTe), copper and indium Selenides (CuInSe2Or " CIS " or CdS/CuInSe2), Copper indium gallium selenide (CuInGaSe2Or " CIGS ") or other photovoltaic active material.The photovoltaic devices of the present invention can have additional quasiconductor Layer or the combination of previously described semiconductor type, and can be double junction structure, three junction structures or Heterojunction structure.
Etching layer can use any conventional semiconductor manufacturing technology with the individual components forming device Perform, include but not limited to, utilize the silk-screen of resist mask, utilize positivity or negative photoresist Etching, machinery portray, discharge portray, chemical etching or laser-induced thermal etching.Etching to each layer is led to Often will cause in device, form individual light cell.Any applicable rank in manufacture process can be used These light cells are electrically connected to each other by the busbar that section is inserted or formed.
It is alternatively possible to it is square on light cell before assembling with polymeric layer and protectiveness base material Become protective layer.This protective layer can be the aluminum of such as sputter.
The electrical interconnection light formed from optional insulating barrier, conductive layer, semiconductor layer and optional protective layer Battery forms the photovoltaic devices of the present invention.
Polymeric layer
Any applicable thermoplastic polymer is used equally to the polymeric layer of the present invention, including polyethylene Butyral, non-plasticizing polyvinyl butyral resin, polyurethane, ethylene-vinyl acetate copolymer, heat Plastic polyurethane, polyethylene, polyolefin, polrvinyl chloride, silicone, ethylene-ethylacrylate copolymerization The ionomer of ethylene-(methyl) acrylic copolymer that thing, part neutralize is (as from E.I.Du Pont Company(sarin)), polyethylene and ethylene copolymers, glycol modification-polyethylene terephthalate (PETG) Or any other polymeric material being suitable for.In various embodiments, this polymer includes ethyl vinyl acetate The ionomer of ethylene/(methyl) acrylic copolymer that ethylene copolymer (EVA) or part neutralize.
In various embodiments, polyvinyl butyral resin can have at least 30,000,40,000, 50,000,55,000,60,000,65,000,70,000,120,000,250,000 or at least 350,000 The molecular weight of gram/mol (g/ mole or dalton).A small amount of two can also be added in acetalization step Aldehyde and three aldehyde (see, e.g. United States Patent (USP) so that molecular weight to increase at least 350g/ mole 4,902,464；4,874,814；4,814,529；With 4,654,179).As used here, term " molecular weight " refers to weight average molecular weight.
The polyvinyl butyral layer of the present invention can include low molecular weight epoxy additive.Such as ability Known in field technique, any applicable epoxy hardener can be used for the present invention and (see, e.g. United States Patent (USP) 5,529,848 and 5,529,849).
In various embodiments, have been found that spendable epoxy composition is selected from (a) as described below Mainly comprise the epoxy resin of the monomer diglycidyl ether of bisphenol-A；B () mainly comprises Bisphenol F The epoxy resin of monomer diglycidyl ether；C () mainly comprises the hydrogenation diglycidyl ether of bisphenol-A Epoxy resin；(d) poly-epoxidization phenolic resin (polyepoxidized phenol novolacs)；(e) The diepoxide of polyglycols, or referred to as epoxy-terminated polyether；And (f) any aforementioned epoxy tree The mixture of fat (a) to (e) (sees " polymer science and technology encyclopedia " (Encyclopedia of Polymer Science&Technology) roll up in 6 the 209-271 page, 1967, Interscience Publishers, New York).
By any applicable amount, epoxy hardener can be incorporated in polyvinyl butyral layer.Respectively Planting in embodiment, by 0.5 to 15phr, 1 to 10phr or 2 to 3phr, (resin is corresponding parts per hundred parts Number) be incorporated to epoxy hardener.This tittle can apply to various curable epoxide listed above Any one in agent, and in specially those shown in Formulas I, and can apply to this The amount of the mixture of the epoxy hardener that literary composition describes.
Adhesion control agents (ACA), and Adhesion control agents can also be used in the polymeric layer of the present invention (ACA) those disclosed in United States Patent (USP) 5,728,472 can be included.Furthermore, it is possible to by changing The amount of the associated hydroxide that acid uses in neutralizing regulates sodium acetate and/or the potassium acetate of remnants.? In various embodiments, in addition to sodium acetate and/or potassium acetate, the polymeric layer of the present invention also comprises double (2 Ethylbutanoic acid) magnesium (Chemical Abstracts Service's registration number 79992-76-0).Can be by efficiently controlling polymerization The amount of the adhesiveness of nitride layer comprises magnesium salt.
Polyvinyl butyral resin can be produced by known acetal technique, known acetal technique In the case of being included in acid catalyst, polyvinyl alcohol is reacted with butyraldehyde, then carry out catalyst Being dried of neutralization, separation, stabilisation and resin.
As used herein, " resin " refers to neutralize from acid catalysis and follow-up polymer precursor The polyvinyl butyral component that the mixture obtained removes.In addition to polyvinyl butyral resin, tree Fat the most also will have other components, such as acetate, salt and alcohol.
Public affairs that the details of applicable technique manufacturing polyvinyl butyral resin is those skilled in the art Know (see, e.g. United States Patent (USP) 2,282,057 and 2,282,026).In one embodiment, permissible Use " polymer science and technology encyclopedia " (Encyclopedia of Polymer Science& Technology) in third edition volume 8 B.E.Wade of the 381-399 page written " ethylene acetal gathers Compound " solvent method described in (Vinyl Acetal Polymers) (2003).In another embodiment In, it is possible to use the Aqueous phase that this article describes.Polyvinyl butyral resin can pass through business in a variety of forms Industry channel obtains, such as obtainable from the Solutia Inc. company of St. Louis ButvarTMResin.
As used here, term " molecular weight " refers to weight average molecular weight.
Any applicable plasticizer can be added in the polyvinyl butyral resin of the present invention with Just polyvinyl butyral layer is formed.The plasticizer used in the polyvinyl butyral layer of the present invention The ester etc. of polyprotic acid or polyhydric alcohol can be included.The plasticizer being suitable for includes, such as triethylene glycol two -(2 Ethylbutanoic acid ester), triethylene glycol two-(2-ethylhexanoate), triethylene glycol two heptanoate, tetrem Glycol two heptanoate, dihexyl adipate, dioctyl adipate, cyclohexyl hexyl adipate, oneself Two heptyl heptylates and the mixture of adipic acid nonyl ester, diisononyl adipate, adipic acid heptyl nonyl ester, Dibutyl sebacate, polymeric plasticiser (sebacic alkyd resins, phosphate ester and adipic acid as modified in oil Ester admixture (disclosed in United States Patent (USP) No.3,841,890) and adipate ester are (as the U.S. is special Those disclosed in profit No.4,144,217)) and the mixture of aforementioned plasticizer and combination.Can Other plasticizers used are by the C as disclosed in United States Patent (USP) No.5,013,7794To C9Alkyl Alcohol and ring C4To C10Alcohols and C6To C8Mixing prepared by adipate ester (such as dihexyl adipate) Adipate ester.In a preferred embodiment, plasticizer is triethylene glycol two-(2-ethylhexanoate).
In certain embodiments, this plasticizer have less than 20, less than 15, less than 12 or less than The hydrocarbon section of 10 carbon atoms.
Can be incorporated to additive in polyvinyl butyral layer strengthen its property in the final product Energy.Examples of such additives includes but not limited to, plasticizer, dyestuff, pigment, stabilizer are (such as, purple Outside line stabilizer), antioxidant, fire retardant, other IR absorbent, UV absorbent, antitack agent (anti-block agent), the combination etc. of aforementioned additive, as is well known in the art.
Formed polyvinyl butyral layer an exemplary method include extruding fusing containing polyvinyl alcohol The resin of butyral, plasticizer and additive, then make melt pass through sheet die and (such as have one The mould of the individual opening being substantially greater than its vertical dimensions in a dimension).Form polyvinyl alcohol contracting fourth Another exemplary method of aldehyde layer include by melt from die casting to roll on, by melt solidify, Then the melt of the solidification as sheet material is removed.
As used herein, " melt " refers to that with plasticizer and other add resin alternatively The mixture of agent.In any embodiment, by regulating the surface of mould openings or can roll Roller surface provides texture to control the superficial makings of this layer wherein one or both sides.For controlling this The other technologies of layer texture include changing the parameter of material, and (such as, resin and/or plasticizer is aqueous Amount, melt temperature, the molecular weight distribution of polyvinyl butyral resin or the combination of aforementioned parameters).It addition, This layer can be configured to the spaced protrusions including defining provisional surface irregularity, in order to promote The degassing of this layer in lamination process, hereafter the temperature and pressure of the rising of lamination process makes these dash forward Rise and be fused in this layer, thus produce smooth finished product.
Protectiveness base material
The protectiveness base material of the present invention as shown in element 18 in accompanying drawing can be used for supporting die Block and can any applicable base material of the treated profile to define sufficient size, as described above. Example includes but not limited to glass and rigidity plastics.It is usually preferable that this protectiveness base material allows The major part of the incident radiation in 350 to 1,200 nanometer range is transmitted, but people in the art Member, it will be recognized that various change is possible, enters photovoltaic devices including all light transmission substrates Change.In these embodiments, protectiveness base material needs not be transparent or such without major part, And can be such as to stop light to be left the reflective membrane of photovoltaic module by protectiveness base material.
Assemble
The final of the thin film photovoltaic module of the present invention assembles the tool including arranging with formed on substrate There is the polymeric layer that the thin-film photovoltaic device of busbar contacts, the protection with Polymer layer contact is set Property base material, and this laminates is formed module.
In various embodiments of the present invention, the autoclave laminating technology of routine is used.Real at other Execute in example, use non-autoclave technique, such as niproll or vacuum bag or vacuum ring technique.At one In this type of technique, after assembling, place the assembly in vacuum bag or vacuum ring, under vacuo It is de-gassed (as from 0.7-0.97 atmospheric pressure), and the time (example that this process is persistently suitable for As, 0-60 minute), then rise high-temperature to complete module at a temperature of such as 70-150 DEG C.Optional Ground, it is possible to use autoclave mode processing module completes module.At multiple preferred non-autoclave In embodiment, polymer aqueous amount keeps relatively low, such as 0.1-0.35%.
The photovoltaic module of the present invention provides the ratio allowing to use non-autoclave technique acceptable products simultaneously The advantage that rate is the highest.United States Patent (USP) discloses and describes a kind of concrete work in 2003/0148114 A1 Skill niproll non-autoclave technique.In the case of there is no the profile molding glass of the present invention, non- Autoclave photovoltaic module exists when being formed at the polymer sheet layer using 0.762 millimeter (30 mil) Problem, has the highest defect rate.Utilizing profile Shaped substrates, the present invention allows the most de- Gas, so that defect rate is substantially reduced.In various embodiments of the present invention, described herein Any photovoltaic module of invention all successfully can produce with high finished product rate, wherein uses non-autoclave Technique, and the thickness of the polymer sheet used the most about 0.254 millimeter (10 mil), such as From 0.203 to 0.381 millimeter (8 to 15 mil) or from 0.203 or 0.305 millimeter of (8 to 12 milli Inch).Certainly, these non-autoclave technology are utilized easily to realize the lamination of relatively thick-layer.
In addition to being applied to photovoltaic module, the profile molding glass of the present invention can be used in effectiveness Have in the heated lamination glass applications of busbar, as having the rear portion of the integrated grid for defrosting Automotive defroster.In this type of is applied, the grid of heating element heater is typically connected to cause and photovoltaic mould Block manufacture encountered in the busbar of projection of the same lamination difficult problem of problem.
The present invention includes the method making photovoltaic module, and the method includes providing substrate, thereon shape Become photovoltaic devices and use the polymeric layer of the present invention that photovoltaic devices is laminated to the protection of the present invention Property profile Shaped substrates step, wherein profile Shaped substrates have offer conflux one or more The profile of the orientation depression around bar.
The benefit provided by the present invention, it now is possible to provide and there is desirable physical stability and low order The thin film photovoltaic module of product rate processing.
Although the present invention describes with reference to example embodiment, but those skilled in the art will manage Solve, multiple change can be carried out on the premise of without departing substantially from the scope of the invention and equivalent can be utilized Substitute its element.Repair additionally, many can be carried out on the premise of without departing substantially from essential scope of the present invention Change to adjust particular case or material to state to the principle adapting to the present invention.Therefore, the present invention should not It is limited to the specific embodiment disclosed in the detailed description of the invention as imagined for realizing the present invention, and this Invention will comprise all embodiments being within the purview of the appended claims.
It will also be understood that in the case of compatibility, for the basis that any single component of the present invention is given Any model that scope, value or the feature of invention can give with any other assembly for the present invention Enclose, value or feature are used interchangeably, in order to form the embodiment with the value for each component definition, As given by the most in the whole text.For example, it is possible to by polyvinyl butyral resin epoxide scope and Plasticizer range combinations belongs to the many permutation and combination in the scope of the invention to be formed, but is arranged It is the most loaded down with trivial details for going out.
The Ref. No. of any figure be given in specification digest or any claim is only for Improving eyesight, it is not construed as that the invention of opinion is limited to any one shown in any figure specific Embodiment.
Unless otherwise noted, otherwise accompanying drawing is not drawn to scale.
Herein with reference to each list of references including journal of writings, patent, application and books the most logical Cross incorporated to be expressly incorporated herein.

Claims (18)

1. a thin film photovoltaic module for lamination, comprising:
Substrate；
Thin-film photovoltaic device, it is arranged to contact with described substrate, and wherein said photovoltaic devices includes busbar, wherein said Busbar is prominent from the surface of described device；
Polymeric layer, it is arranged to contact with described photovoltaic devices；And
Protectiveness base material, it is arranged to and described Polymer layer contact, and wherein said protectiveness base material is shaped to carry by profile For the one or more orientation depressions around described busbar, wherein take turns in protectiveness base material and the one side of Polymer layer contact The percentage ratio 20 to 70% of the wide surface area shaped, wherein said depression is for guiding the air around busbar during being laminated Thus reduce or prevent bubble formation in lamination.
2. module as claimed in claim 1, wherein said substrate and described protectiveness base material include glass.
3. module as claimed in claim 1, wherein said polymeric layer includes polyvinyl butyral resin.
4. module as claimed in claim 1, wherein said busbar includes transverse projections, and the one or more orientation Cave in vertical with described transverse projections.
5. module as claimed in claim 4, wherein said busbar includes transverse projections, and the one or more orientation Depression is directed to described transverse projections side.
6. module as claimed in claim 1, wherein said orientation depression has the width of 0.1 to 15 millimeter.
7. module as claimed in claim 1, wherein said orientation depression has the width of 3 to 6 millimeters.
8. module as claimed in claim 1, wherein said orientation depression has the degree of depth of 0.0254 to 0.508 millimeter.
9. module as claimed in claim 1, wherein said orientation depression has the degree of depth of 0.0254 to 0.127 millimeter.
10. the method making the thin film photovoltaic module of lamination, comprising:
Substrate is provided；
Forming thin-film photovoltaic device on the substrate, wherein said photovoltaic devices includes busbar, wherein said busbar from The surface of described device highlights；
The polymeric layer contacted with described photovoltaic devices is set；
Arranging the protectiveness base material with described Polymer layer contact, wherein said protectiveness base material is configured in institute by profile Stating the one or more orientation depressions around busbar, wherein protectiveness base material shapes with profile in the one side of Polymer layer contact The percentage ratio 20 to 70% of surface area, wherein said depression subtracts for guiding the air around busbar during being laminated Less or prevent lamination in bubble formation；And
Described substrate is laminated with described device, described polymeric layer and described protectiveness base material to form described module.
11. methods as claimed in claim 10, wherein said substrate and described protectiveness base material include glass.
12. methods as claimed in claim 10, wherein said polymeric layer includes polyvinyl butyral resin.
13. methods as claimed in claim 10, wherein said busbar includes transverse projections, and the one or more is fixed Vertical with described transverse projections to depression.
14. methods as claimed in claim 13, wherein said busbar includes transverse projections, and the one or more is fixed It is directed to described transverse projections side to depression.
15. methods as claimed in claim 10, wherein said orientation depression has the width of 0.1 to 15 millimeter.
16. methods as claimed in claim 10, wherein said orientation depression has the width of 3 to 6 millimeters.
17. methods as claimed in claim 10, wherein said orientation depression has the degree of depth of 0.0254 to 0.508 millimeter.
18. methods as claimed in claim 10, wherein said orientation depression has the degree of depth of 0.0254 to 0.127 millimeter.
CN201080065597.8A 2010-03-19 2010-03-19 There is profile and shape the thin film photovoltaic module of degassing base material Expired - Fee Related CN102811855B (en)

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