CN102810760A - Novel metamaterial - Google Patents
Novel metamaterial Download PDFInfo
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- CN102810760A CN102810760A CN2011101798903A CN201110179890A CN102810760A CN 102810760 A CN102810760 A CN 102810760A CN 2011101798903 A CN2011101798903 A CN 2011101798903A CN 201110179890 A CN201110179890 A CN 201110179890A CN 102810760 A CN102810760 A CN 102810760A
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Abstract
The invention relates to a novel metamaterial which comprises at least one material sheet layer; wherein each material sheet layer comprises a substrate and artificial micro structures attached to the substrate; each substrate is virtually divided into a plurality of substrate units arranged in an array mode, a pair of artificial micro structures are attached to each of the substrate units; and each pair of the artificial micro structures consist of a first artificial micro structure and a second artificial micro structure which are arranged on the substrate in parallel. The metamaterial has a high broadband dielectric constant in a certain frequency range, and the dielectric constant of the metamaterial is gradually increased from zero in another frequency range, so that requirements of specific occasions can be met.
Description
Technical field
The present invention relates to a kind of material, more particularly, relate to a kind of novel ultra material.
Background technology
Artificial electromagnetic material is commonly called as ultra material, is a kind of novel artificial synthetic material, is the substrate processed by nonmetallic materials and attached on the substrate surface or be embedded in the inner a plurality of artificial micro-structural of substrate and constitute.Substrate can be divided into a plurality of base board units that rectangular array is arranged virtually; Be attached with artificial micro-structural on each base board unit; Thereby form a ultra material cell; Whole ultra material is made up of a lot of so ultra material cell, just as crystal is to be made up of according to certain arranging countless lattices.Artificial micro-structural on each ultra material cell can be identical or incomplete same.Artificial micro-structural has certain geometric plane or a stereochemical structure by what wire was formed, for example forms annular, I-shaped wire etc.
Because the existence of artificial micro-structural, each ultra material cell has the electromagnetic property that is different from substrate itself, so the ultra material that all ultra material cell constitute demonstrates special response characteristic to electric field and magnetic field; Through concrete structure and the shape different, can change the response characteristic of whole ultra material to artificial microstructure design.
The dielectric constant of common material changes along with the variation of frequency, in the frequency range of paying close attention to, only has a resonance peak usually, and as shown in Figure 1, dielectric constant is usually greater than 10 under low-loss situation.In some application scenario, particularly large scale integrated circuit, need use the material that dielectric constant is started from scratch and changed, common material does not generally satisfy.
Summary of the invention
The technical problem that the present invention will solve is, to the above-mentioned defective of prior art, a kind of novel ultra material is provided, and this material has the wideband high-k and in another frequency range, has the dielectric constant distribution that is increased gradually by zero beginning in certain frequency range.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of novel ultra material; This material comprises at least one sheet of material; Each sheet of material comprises substrate and attached to the artificial micro-structural on the substrate; Each substrate is divided into the base board unit of a plurality of array arrangements virtually; Adhere to a pair of artificial micro-structural on each base board unit, the every pair of artificial micro-structural is included in the parallel first artificial micro-structural and the second artificial micro-structural of arranging on the said base board unit, this material in certain frequency range, have the wideband high-k and in another frequency range dielectric constant increase gradually by zero.
In preferred implementation of the present invention, the said first artificial micro-structural and the second artificial micro-structural are of similar shape, and comprise I-shape construction and two opening opening opposing loop configuration that intersect with the middle connecting line of I-shape construction.
In preferred implementation of the present invention, the said first artificial micro-structural and the second artificial micro-structural measure-alike.
In preferred implementation of the present invention, the said first artificial micro-structural is different with the size of the second artificial micro-structural.
In preferred implementation of the present invention, the size of said artificial micro-structural all is not more than 1/10th of incident electromagnetic wave wavelength.
In preferred implementation of the present invention, said artificial micro-structural is processed by copper cash or silver-colored line.
In preferred implementation of the present invention, said substrate is a ceramic material.
In preferred implementation of the present invention, said substrate is a polytetrafluoroethylene.
In preferred implementation of the present invention, said substrate is ferroelectric material, ferrite material or ferromagnetic material.
In preferred implementation of the present invention, said substrate is FR-4.
A kind of novel ultra material of embodiment of the present invention has following beneficial effect: this material has the wideband high-k and in another frequency range, has the dielectric constant distribution that is increased gradually by zero beginning in certain frequency range, can satisfy the application of specific occasion.
Description of drawings
To combine accompanying drawing and embodiment that the present invention is described further below, in the accompanying drawing:
Fig. 1 is a common material dielectric constant characteristic curve;
Fig. 2 is the structural representation of the novel ultra material among the embodiment one;
Fig. 3 is the structural representation of a material cell in the material shown in Figure 2;
Fig. 4 is the structural representation of the first artificial micro-structural among the embodiment one;
Fig. 5 is the dielectric constant performance plot of the novel ultra material among the embodiment one;
Fig. 6 is the structural representation of the first artificial micro-structural among the embodiment two;
Fig. 7 is the dielectric constant performance plot of novel ultra material among the embodiment two.
Fig. 8 is the structural representation of a material cell among the embodiment three;
Fig. 9 is the dielectric constant performance plot of the novel ultra material among the embodiment three.
Embodiment
Embodiment one
Present embodiment provides a kind of novel ultra material, comprises at least one sheet of material, and when having a plurality of sheet of material, these sheet of material are along being stacked to together perpendicular to its surperficial direction.
Figure is shown in 2; This material comprises the sheet of material 1 of 3 even uniform thickness; Polylith sheet of material 1 stacks gradually along the direction (z direction of principal axis) perpendicular to base plan; Between per two block of material lamellas 1 through certain packaging technology for example weld, riveted joint, mode such as bonding is processed as a whole or through filling the for example liquid raw substrate of material that can connect the two, it is bonding with existing two sheet of material 1 after curing, thereby make integral body of polylith sheet of material 1 formation.
Each sheet of material 1 comprises substrate and attached to the artificial micro-structural on the substrate; Substrate is divided into a plurality of identical column base board units that are close to each other virtually, and these base board units are row, are leu time array arrangement with vertical with it y direction of principal axis with the x direction of principal axis.The design base board unit is of a size of 4 millimeters * 2 millimeters * 0.818 millimeter, map 3, i.e. a
1=4 millimeters, a
2=2 millimeters, a
3=0.818 millimeter; The parallel first artificial micro-structural 3 and the second artificial micro-structural 4 of adhering to of each base board unit; Artificial micro-structural on base board unit and the base board unit is common to constitute a material cell 2, as shown in Figure 2, and the material of present embodiment can be regarded as by a plurality of material cell 2 and forms along x, y, three direction array arrangements of z; Wherein, artificial micro-structural can through etching, plating, brill quarter, photoetching, electronics is carved or ion quarter etc. mode be attached on the said base material.
The first artificial micro-structural 3 and the second artificial micro-structural 4 are metal wire; Here use copper cash, the cross section of copper cash is a rectangle, and cross section is of a size of 0.1 millimeter * 0.018 millimeter; Wherein the live width of copper cash is 0.1 millimeter; The thickness of copper cash is 0.018 millimeter, and certainly metal wire also can use other metal wires such as silver-colored line, and the cross section of metal wire also can be cylindric, flat or other shapes.The shape and size of the first artificial micro-structural and the second artificial micro-structural are all identical in the present embodiment.The first artificial micro-structural 3 is as shown in Figure 4 to comprise I-shape construction and two opening opening opposing loop configuration that intersect with the middle connecting line of I-shape construction; The distance on the border of the top edge of this artificial micro-structural and left and right edges and its base board unit that is adhered to is 0.1 millimeter; The size of the each several part of map 4, the first artificial micro-structurals is respectively: b1=1.8 millimeter, b2=0.75 millimeter, b3=0.5 millimeter, b4=0.15 millimeter; C1=1.9 millimeter, c2=0.2 millimeter, c3=0.3 millimeter, c4=0.3 millimeter; Dielectric constant characteristic Simulation figure corresponding when electromagnetic wave passes through this material is as shown in Figure 5; Can know by the solid line among Fig. 5; The dielectric constant characteristic of this material has double resonance, and (0GHz～10GHz) dielectric constant is higher, and has broadband properties preferably in certain frequency range; Corresponding to second resonance; Dielectric constant is (18GHz～22GHz) increase gradually by zero in certain frequency range; And the imaginary part that can know corresponding dielectric constant in the less frequency range of dielectric constant by dotted line is near zero; Therefore loss is also lower, so this material can also be applied in the occasion that needs dielectric constant less.
In the time in other frequency ranges, need using broadband properties and dielectric constant and start from scratch the characteristic that changes; Can realize through the size of change material cell or the size of the first artificial microstructure size or the second artificial micro-structural; Reduce to move behind the size resonance peak, size becomes big resonance peak reach.
Embodiment two
With the difference of embodiment one be: the width of the first artificial micro-structural 3 and the second artificial micro-structural 4 has diminished; Size such as Fig. 6 of the each several part of the first artificial micro-structural are respectively: b1=1.2 millimeter, b2=0.45 millimeter, b3=0.2 millimeter, b4=0.15 millimeter; C1=1.9 millimeter, c2=0.2 millimeter, c3=0.3 millimeter, c4=0.3 millimeter; The shape and size of the second artificial micro-structural are identical with the first artificial micro-structural.Dielectric constant characteristic Simulation figure corresponding when electromagnetic wave passes through this material is as shown in Figure 7; Can know by the solid line among Fig. 7; The dielectric constant characteristic of this material has double resonance, and (0GHz～12GH) dielectric constant is higher, and has broadband properties preferably in certain frequency range; And corresponding to second resonance; Dielectric constant is (27GHz～32GHz) increase gradually by zero in certain frequency range; And the imaginary part that can know corresponding dielectric constant in the less frequency range of dielectric constant by dotted line is near zero; Therefore loss is also lower, so this material can be applied in the occasion that needs broadband properties, also being suitable for use in needs dielectric constant by the zero occasion that increases gradually.Comparative example one can know, move behind the resonance peak after the minification.In like manner, increased in size resonance peak reach.The first artificial micro-structural and the second artificial micro-structural is measure-alike in the foregoing description, need to prove: when both sizes do not have identical characteristic simultaneously yet, when promptly changing the size of artificial micro-structural, increased in size is moved behind the resonance peak; Minification, the resonance peak reach.
Embodiment three
Each material cell is as shown in Figure 8; With the difference of embodiment one be: the size decreases of the first artificial micro-structural 3; Second artificial little 4 the size constancy, the size of the each several part of the first artificial micro-structural is respectively: b1=1.2 millimeter, b2=0.45 millimeter, b3=0.2 millimeter, b4=0.15 millimeter; C1=1.9 millimeter, c2=0.2 millimeter, c3=0.3 millimeter, c4=0.3 millimeter; Dielectric constant characteristic Simulation figure corresponding when electromagnetic wave passes through this material is as shown in Figure 9; Can know by the solid line among Fig. 9; The dielectric constant characteristic of this material has multi resonant shakes, and (15GHz～18GHz) dielectric constant is higher, and has broadband properties preferably in certain frequency range for dielectric constant; In addition, (24GHz～30GHz) increases by zero dielectric constant gradually, and the imaginary part that can know corresponding dielectric constant in the less frequency range of dielectric constant by dotted line is near zero, so loss is also lower in certain frequency range.Comparative example one can know, move behind the resonance peak after the minification.In like manner, increased in size resonance peak reach.Therefore when we need use broadband properties and increase characteristic with dielectric constant gradually by zero in different frequency range, a size that only need the artificial micro-structural of change can realize.
Combine accompanying drawing that embodiments of the invention are described above; But the present invention is not limited to above-mentioned embodiment, and above-mentioned embodiment only is schematically, rather than restrictive; Those of ordinary skill in the art is under enlightenment of the present invention; Not breaking away under the scope situation that aim of the present invention and claim protect, also can make a lot of forms, these all belong within the protection of the present invention.
Claims (10)
1. novel ultra material; It is characterized in that; This material comprises at least one sheet of material; Each sheet of material comprises substrate and attached to the artificial micro-structural on the substrate, each substrate is divided into the base board unit of a plurality of array arrangements virtually, adheres to a pair of artificial micro-structural on each base board unit; Every pair of artificial micro-structural is included in the parallel first artificial micro-structural and the second artificial micro-structural of arranging on the said base board unit, and this material has the wideband high-k and in another frequency range, has the dielectric constant distribution that is increased gradually by zero beginning in certain frequency range.
2. novel ultra material according to claim 1; It is characterized in that; The said first artificial micro-structural and the second artificial micro-structural are of similar shape, and comprise I-shape construction and two opening opening opposing loop configuration that intersect with the middle connecting line of I-shape construction.
3. novel ultra material according to claim 2 is characterized in that: the said first artificial micro-structural and the second artificial micro-structural measure-alike.
4. novel ultra material according to claim 2 is characterized in that: the said first artificial micro-structural is different with the size of the second artificial micro-structural.
5. novel ultra material according to claim 2, it is characterized in that: the size of said artificial micro-structural all is not more than 1/10th of incident electromagnetic wave wavelength.
6. according to the arbitrary described novel ultra material of claim 1 to 5, it is characterized in that: said artificial micro-structural is processed by copper cash or silver-colored line.
7. novel ultra material according to claim 6 is characterized in that said substrate is a ceramic material.
8. novel ultra material according to claim 6 is characterized in that said substrate is a polytetrafluoroethylene.
9. novel ultra material according to claim 6 is characterized in that said substrate is ferroelectric material, ferrite material or ferromagnetic material.
10. novel ultra material according to claim 6 is characterized in that said substrate is FR-4.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110179890.3A CN102810760B (en) | 2011-06-29 | 2011-06-29 | Novel metamaterial |
| EP11860703.5A EP2560235B1 (en) | 2011-06-17 | 2011-10-27 | Artificial microstructure and artificial electromagnetic material using same |
| PCT/CN2011/081441 WO2012171295A1 (en) | 2011-06-17 | 2011-10-27 | Artificial microstructure and artificial electromagnetic material using same |
| US13/634,826 US8974893B2 (en) | 2011-06-17 | 2011-10-27 | Artificial microstructure and artificial electromagnetic material using the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110179890.3A CN102810760B (en) | 2011-06-29 | 2011-06-29 | Novel metamaterial |
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| CN102810760A true CN102810760A (en) | 2012-12-05 |
| CN102810760B CN102810760B (en) | 2014-07-23 |
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| CN201110179890.3A Active CN102810760B (en) | 2011-06-17 | 2011-06-29 | Novel metamaterial |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956986A (en) * | 2011-08-19 | 2013-03-06 | 深圳光启高等理工研究院 | Broadband high-refractive-index artificial electromagnetic material |
| CN103715516A (en) * | 2014-01-22 | 2014-04-09 | 中国科学院电子学研究所 | Plane dual structure-based frequency scanning reflector antenna and diffracted wave amplification method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587990A (en) * | 2009-07-01 | 2009-11-25 | 东南大学 | Broad band cylindrical lens antenna based on artificial electromagnetic materials |
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2011
- 2011-06-29 CN CN201110179890.3A patent/CN102810760B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587990A (en) * | 2009-07-01 | 2009-11-25 | 东南大学 | Broad band cylindrical lens antenna based on artificial electromagnetic materials |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956986A (en) * | 2011-08-19 | 2013-03-06 | 深圳光启高等理工研究院 | Broadband high-refractive-index artificial electromagnetic material |
| CN102956986B (en) * | 2011-08-19 | 2015-04-22 | 深圳光启高等理工研究院 | Broadband high-refractive-index artificial electromagnetic material |
| CN103715516A (en) * | 2014-01-22 | 2014-04-09 | 中国科学院电子学研究所 | Plane dual structure-based frequency scanning reflector antenna and diffracted wave amplification method |
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| CN102810760B (en) | 2014-07-23 |
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