CN102810462A - Preparation method for semiconductor rectifying device with high breakdown voltage - Google Patents
Preparation method for semiconductor rectifying device with high breakdown voltage Download PDFInfo
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- CN102810462A CN102810462A CN2012102004205A CN201210200420A CN102810462A CN 102810462 A CN102810462 A CN 102810462A CN 2012102004205 A CN2012102004205 A CN 2012102004205A CN 201210200420 A CN201210200420 A CN 201210200420A CN 102810462 A CN102810462 A CN 102810462A
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Abstract
The invention discloses a preparation method for a semiconductor rectifying device with high breakdown voltage. The preparation method comprises the following steps of: modifying a TiO2 nanometer tube array by a narrow-band semiconductor; preparing a titanium dioxide nanometer tube array template by an anodic oxidation method, and annealing the obtained array template at the temperature of 50 DEG C for 3.5 hours; sequentially soaking the array template in a lead nitrate solution, deionized water, a sodium sulfide solution and the deionized water, wherein the molar ratio of lead to sulfur in the solution is 1:1; and repeating the steps for 5-8 times, finally performing ultrasonic processing to obtain a lead sulfide modified titanium dioxide nanometer tube array photoanode. The preparation method for the titanium dioxide nanometer tube array photoanode material is simple in production process; and the prepared titanium dioxide nanometer tube array photoanode material is high in electric current density and photoelectric conversion efficiency, and can be directly applied.
Description
Technical field
The present invention relates to the preparation of semiconductor rectifier device, particularly a kind of semiconductor rectifier device preparation method with obvious rectifying effect, big puncture voltage.
Background technology
Semiconductor rectifier device with rectifying effect is the core of many important semiconductor device, utilizes it can prepare numerous devices such as diode, solar cell, field-effect transistor, solar cell, laser.Forward cut-in voltage, reverse breakdown voltage and reverse current are the important parameters of semiconductor rectifier device, and be particularly important for the semiconductor device of design different capacity, different purposes.Wherein, add reverse voltage when surpassing a certain numerical value, reverse current can increase suddenly, and this phenomenon is called electrical breakdown.The critical voltage that causes electrical breakdown is called the semiconductor rectifier reverse breakdown voltage.Semiconductor rectifier loses unilateral conduction during electrical breakdown.If semiconductor rectifier is overheated less than causing because of electrical breakdown; Then unilateral conduction not necessarily can be by permanent destruction, and after removing applied voltage, its performance still can be recovered; Otherwise semiconductor rectifier has just damaged, thereby the reverse voltage that should avoid semiconductor rectifier to add when using is too high.If semiconductor rectifier can not bear high reverse voltage, not only can influence its application in semiconductor device, and can influence its life-span.
Summary of the invention
Above shortcoming in view of prior art the purpose of this invention is to provide a kind of preparation method with semiconductor rectifier device of big puncture voltage, with the practicability performance of further raising two semiconductor rectifiers in electronics, electrician.
The objective of the invention is to realize through following means.
A kind of preparation method with semiconductor rectifier device of big puncture voltage utilizes narrow-band semiconductor to TiO
2Nano-tube array is modified, and may further comprise the steps:
A) anode oxidation method prepares TiO
2Nano-tube array
With platinized platinum as negative electrode, titanium sheet (1cm wide * 3cm is long) as anode; The titanium sheet is immersed in along long side direction 2cm (reveal 1cm titanium sheet on liquid level to give over to electrode) in the ethylene glycol solution of 0.25%wt (being that percentage by weight is 0.25%) ammonium fluoride and carries out anodic oxidation; Voltage is 55v; Oxidization time 13 hours promptly grows TiO at titanium plate surface
2Nano-tube array.
B) the synthetic CuS/TiO of hydro-thermal
2Nanotube array composite material
The growth of A step there is TiO
2The titanium sheet of nano-tube array is put into the mixed solution that copper chloride and sodium thiosulfate are housed, and the copper chloride of mixed solution is identical with the molar concentration of sodium thiosulfate, and concentration is 0.005-0.02mol/L; After sealing with autoclave, put into stove and heat, the time is 17 hours, and temperature is 100 ℃.
C) make bar shaped aluminium electrode
At CuS/TiO
2Nanotube array composite material surface AM aluminum metallization electrode, the aluminium electrode is perpendicular to the long limit of titanium sheet, and vacuum degree is 5-10 during vapor deposition
-4Pa, the thickness of aluminium electrode are 100nm, and width is 3mm, and length is the width 10mm of titanium sheet, interval 2mm between the aluminium electrode.With the aluminium electrode is positive pole, and exposed titanium substrate is a negative pole, and whole system promptly constitutes the semiconductor rectifier device with big puncture voltage.
Adopt the semiconductor rectifier device with big puncture voltage of the present invention, can be widely used in numerous semi-conductor electronic devices such as diode, solar cell, field-effect transistor, solar cell, laser.
Description of drawings
Fig. 1, CuS/TiO
2The positive SEM image of nanotube array composite material.
Fig. 2, CuS/TiO
2Nanotube array composite material section SEM image.
Fig. 3, CuS/TiO
2Nanotube array composite material TEM image.
Fig. 4, CuS/TiO
2Nanotube array composite material XRD figure picture.
Fig. 5, CuS/TiO
2Nanotube array composite material TEM image.
Fig. 6, Ti/CuS/TiO
2The I-V curve chart of nanotube array composite material/Al semiconductor rectifier device.
Embodiment
Below in conjunction with embodiment the present invention is further described.
Embodiment one
A) anode oxidation method prepares TiO
2Nano-tube array
With platinized platinum as negative electrode, titanium sheet (1cm wide * 3cm is long) as anode; The titanium sheet is immersed in along long side direction 2cm (reveal 1cm titanium sheet on liquid level to give over to electrode) in the ethylene glycol solution of 0.25%wt (being that percentage by weight is 0.25%) ammonium fluoride and carries out anodic oxidation; Voltage is 55v; Oxidization time 13 hours promptly grows TiO at titanium plate surface
2Nano-tube array.
B) the synthetic CuS/TiO of hydro-thermal
2Nanotube array composite material
The growth of A step there is TiO
2The titanium sheet of nano-tube array is put into the mixed solution that copper chloride and sodium thiosulfate are housed, and the copper chloride of mixed solution is identical with the molar concentration of sodium thiosulfate, and concentration is 0.005mol/L; After sealing with autoclave, put into stove and heat, the time is 17 hours, and temperature is 100 ℃.
C) make bar shaped aluminium electrode
At CuS/TiO
2Nanotube array composite material surface AM aluminum metallization electrode, the aluminium electrode is perpendicular to the long limit of titanium sheet, and vacuum degree is 5-10 during vapor deposition
-4Pa, the thickness of aluminium electrode are 100nm, and width is 3mm, and length is the width 10mm of titanium sheet, interval 2mm between the aluminium electrode.With the aluminium electrode is positive pole, and exposed titanium substrate is a negative pole, and whole system promptly constitutes the semiconductor rectifier device with big puncture voltage.
As can beappreciated from fig. 1 CuS/TiO
2Nanotube array composite material has kept original tubular structure, and the nanotube tube wall is coated by one deck nano particle, and the size of nano particle is about 20nm, and pipe thickness increases to 150nm, and bore (d2) is reduced to 90nm, and external diameter (D2) is about 370nm.Be illustrated in figure 2 as the profile of combination product after ultrasonic peeling off; As can be seen from the figure nano particle line up and the pipe outer wall in mouth of pipe 200-600nm scope have formed coating; Mouth of pipe place nano particle coats the degree maximum to tube wall, and is far away more away from the distance of the mouth of pipe, and the coating degree of pipe outer wall is low more; Basically have only the absorption of individual layer nano particle, can find out that from the nanotube of breakage inside pipe wall do not see nano-particles filled simultaneously.From the visible ultrasonic rear section TiO of Fig. 2
2Nanotube has exposed the mouth of pipe, and smooth surface, its pipe thickness are 15-20nm, internal diameter (d
1) be about 160nm, external diameter (D
1) be about 200nm; Therefore can infer the thickness that the CuS nano particle coats at mouth of pipe inside and outside wall from geometrical relationship, the thickness that coats along inside pipe wall is (d
1-d
2)/2, promptly about 35nm, the thickness that coats along the pipe outer wall is (D
2-D
1)/2, promptly about 85nm, both add TiO at sum
2The pipe thickness of nanotube self (20nm) is 140nm, and is approaching with the thickness 150nm of mouth of pipe place, the compound back tube wall of direct measurement.Can only roughly judge the coating situation of nanometer mouth of pipe inside and outside wall through scanning, and can not draw along the coating thickness of the outside nano particle of the nanometer mouth of pipe.The visible nanometer mouth of pipe place of TEM figure as shown in Figure 3 has tangible nano particle to coat; The coating thickness outside along mouth of pipe place is about 45nm; Can find out simultaneously that the inner pipe outer wall that reaches away from the mouth of pipe of pipe does not have nano particle to exist, consistent with the conclusion that draws from scintigram.
X-ray diffraction spectrum as shown in Figure 4 shows except Ti substrate and Detitanium-ore-type TiO
2Diffraction maximum outside, all the other diffraction maximums are corresponding with CuS (JCPDS No.06-0464), explain to cover TiO
2It on the nanotube tube wall CuS nano particle
[9], both combine to have formed CuS/TiO
2Nanometer tube composite materials.
Ti/CuS/TiO shown in Figure 5
2The I-V curve chart of nanotube array composite material/Al semiconductor rectifier device is about 3.5V by visible its forward conduction voltage of figure, and reverse breakdown voltage is higher than 15V, and CuS/TiO is described
2Between the interface electric field stronger.
Change CuCl shown in Figure 6
2The rectification curve of the device that obtains after the concentration, same visible significantly rectifying effect, reverse voltage is still very big.
Adopt basic skills of the present invention, in reality was implemented, process conditions also can be done some and change, and identical such as the molar concentration of the copper chloride of mixed solution and sodium thiosulfate, concentration is in the scope of 0.005-0.02mol/L, all can obtain good effect.
Claims (2)
1. the preparation method with semiconductor rectifier device of big puncture voltage utilizes narrow-band semiconductor to TiO
2Nano-tube array is modified, and may further comprise the steps:
A) anode oxidation method prepares TiO
2Nano-tube array
With platinized platinum as negative electrode, titanium sheet as anode, the titanium sheet is immersed in the ethylene glycol solution of 0.25%wt ammonium fluoride and carries out anodic oxidation, voltage is 55v, oxidization time 13 hours promptly grows TiO at titanium plate surface
2Nano-tube array;
B) the synthetic CuS/TiO of hydro-thermal
2Nanotube array composite material
The growth of A step there is TiO
2The titanium sheet of nano-tube array is put into the mixed solution that copper chloride and sodium thiosulfate are housed, and the copper chloride of mixed solution is identical with the molar concentration of sodium thiosulfate; After sealing with autoclave, put into stove and heat, the time is 17 hours, and temperature is 100 ℃.
C) make bar shaped aluminium electrode
At CuS/TiO
2Nanotube array composite material surface AM aluminum metallization electrode, the aluminium electrode is perpendicular to the long limit of titanium sheet, and vacuum degree is 5-10 during vapor deposition
-4Pa, the thickness of aluminium electrode are 100nm, interval 2mm between the aluminium electrode; With the aluminium electrode is positive pole, and exposed titanium substrate is a negative pole, constitutes the semiconductor rectifier device with big puncture voltage.
2. according to the preparation method of the said semiconductor rectifier device of claim 1, it is characterized in that the copper chloride of said mixed solution and the molar concentration of sodium thiosulfate are 0.005-0.02mol/L with big puncture voltage.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191248A (en) * | 2006-12-01 | 2008-06-04 | 西南交通大学 | Method for preparing titanium dioxide nano tube array on titanium-substrate material surface |
| CN101844804A (en) * | 2010-05-19 | 2010-09-29 | 西南交通大学 | Preparation method of crystallized TiO2 nanotube array |
| CN101899701A (en) * | 2010-07-19 | 2010-12-01 | 西南交通大学 | Method for preparing composite material of copper sulfide and titanium dioxide nano-tube |
-
2012
- 2012-06-18 CN CN2012102004205A patent/CN102810462A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101191248A (en) * | 2006-12-01 | 2008-06-04 | 西南交通大学 | Method for preparing titanium dioxide nano tube array on titanium-substrate material surface |
| CN101844804A (en) * | 2010-05-19 | 2010-09-29 | 西南交通大学 | Preparation method of crystallized TiO2 nanotube array |
| CN101899701A (en) * | 2010-07-19 | 2010-12-01 | 西南交通大学 | Method for preparing composite material of copper sulfide and titanium dioxide nano-tube |
Non-Patent Citations (1)
| Title |
|---|
| CHALITA RATANATAWANATE ET AL: "Low-Temperature Synthesis of Copper(II) Sulfide Quantum Dot Decorated TiO2 Nanotubes and Their Photocatalytic Properties", 《THE JOURNAL OF PHYSICAL CHEMISTRY》 * |
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Application publication date: 20121205 |