CN102810455A - 产品植入实时监测系统 - Google Patents
产品植入实时监测系统 Download PDFInfo
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- CN102810455A CN102810455A CN2011101455941A CN201110145594A CN102810455A CN 102810455 A CN102810455 A CN 102810455A CN 2011101455941 A CN2011101455941 A CN 2011101455941A CN 201110145594 A CN201110145594 A CN 201110145594A CN 102810455 A CN102810455 A CN 102810455A
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CN2011101455941A CN102810455A (zh) | 2011-05-31 | 2011-05-31 | 产品植入实时监测系统 |
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CN2011101455941A CN102810455A (zh) | 2011-05-31 | 2011-05-31 | 产品植入实时监测系统 |
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CN102810455A true CN102810455A (zh) | 2012-12-05 |
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CN2011101455941A Pending CN102810455A (zh) | 2011-05-31 | 2011-05-31 | 产品植入实时监测系统 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106356273A (zh) * | 2016-11-18 | 2017-01-25 | 上海华力微电子有限公司 | 离子注入即时制造控制系统及离子注入即时制造控制方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4513384A (en) * | 1982-06-18 | 1985-04-23 | Therma-Wave, Inc. | Thin film thickness measurements and depth profiling utilizing a thermal wave detection system |
US4522510A (en) * | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
CN101159243A (zh) * | 2007-08-20 | 2008-04-09 | 中国科学院光电技术研究所 | 一种测量半导体掺杂浓度的方法 |
CN101527273A (zh) * | 2009-04-10 | 2009-09-09 | 中国科学院光电技术研究所 | 一种半导体材料特性的测量装置及测量方法 |
CN101840843A (zh) * | 2009-03-18 | 2010-09-22 | 台湾积体电路制造股份有限公司 | 集成电路的制造方法以及在晶片上产生激光标记的装置 |
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2011
- 2011-05-31 CN CN2011101455941A patent/CN102810455A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4513384A (en) * | 1982-06-18 | 1985-04-23 | Therma-Wave, Inc. | Thin film thickness measurements and depth profiling utilizing a thermal wave detection system |
US4522510A (en) * | 1982-07-26 | 1985-06-11 | Therma-Wave, Inc. | Thin film thickness measurement with thermal waves |
CN101159243A (zh) * | 2007-08-20 | 2008-04-09 | 中国科学院光电技术研究所 | 一种测量半导体掺杂浓度的方法 |
CN101840843A (zh) * | 2009-03-18 | 2010-09-22 | 台湾积体电路制造股份有限公司 | 集成电路的制造方法以及在晶片上产生激光标记的装置 |
CN101527273A (zh) * | 2009-04-10 | 2009-09-09 | 中国科学院光电技术研究所 | 一种半导体材料特性的测量装置及测量方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106356273A (zh) * | 2016-11-18 | 2017-01-25 | 上海华力微电子有限公司 | 离子注入即时制造控制系统及离子注入即时制造控制方法 |
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Free format text: FORMER OWNER: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Effective date: 20140603 Owner name: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: WUXI CSMC SEMICONDUCTOR CO., LTD. Effective date: 20140603 |
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Effective date of registration: 20140603 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
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Application publication date: 20121205 |