CN102804328B - Ion implantation device and method - Google Patents

Abstract

A kind of for making silicon use large scan wheel (14) from the hydrogen ion implanting device that silicon wafer peels off, described scan wheel carries 50+ wafer and rotates around axis around its periphery.In one embodiment, the rotation of wheel is fixed, and hydrionic ribbon beam (101) points to below on the periphery of wheel.Extend above the whole radial width of the wafer of ribbon beam on wheel.Bundle is generated by ion source (16), and ion source provides the extraction ribbon beam with at least 100mm main cross section diameter.Ion source can use the coil (112,112a-c) of centreless saddle type type, to provide the uniform field of the plasma in constraint ion source.The magnet (17) that ribbon beam can bend through 90 degree, described magnet is bending described bundle in banded plane.

Description

Ion implantation device and method

Related application

The application relates to the U.S. Patent application No.12/494 by people such as all Ryding all submitted on the same day with the application of the assignee of the application, 268 " Ion Implantation Apparatus and Methodfor Fluid Cooling ", the U.S. Patent application No.12/494 of the people such as Glavish, 270 " IonImplantation Apparatus and Method ", the U.S. Patent application No.12/494 of the people such as Glavish, 272 " Ion Source Assembly For an Ion Implantation Apparatus andMethod of Generating Ions Therein ", the U.S. Patent application No.12/494 of the people such as Ryding, 269 " Ion Implantation Apparatus ", above-mentioned application is incorporated to herein by reference.

Technical field

The present invention relates to the ion implantation device in implanted ions flat work pieces.The embody rule of ion implantation device comprises the manufacture of the thin slice of the crystal semiconductor material of such as silicon.This silicon sheet can be used for manufacturing photovoltaic cell.

Background technology

Due to the increase in demand of the rechargeable energy based on renewable origin, the enforcement of photovoltaic technology in recent years significantly launches.However, forming the method being better than the crystalline silicon body of photovoltaic cell is most still a difficult problem.

Usually the crystal silicon wafer being suitable for carrying photovoltaic cell is obtained by cutting silicon ingot.This technique produces the silicon wafer thicker than 150 μm usually, wastes a large amount of silicon because kerf loss expends the silicon main body up to 50% and delivery of than thickness much bigger needed for useful photovoltaic device.

Film is peeled off make thinner silicon sheet by carrying out heating after implanting in high dose ion.The film made by this method can be used for forming silicon on insulated substrate, but for high cost solar cell.And the thickness place below 1 μm, film can be so thin to such an extent as to make to be difficult to carry out effective light and capture.Promote the energy of implanted ions and can increase film thickness, but this transformation will make film costly and for less economical photovoltaic cell.

Correspondingly, a kind of good method of cost benefit is needed to form silicon main body for photovoltaic application optimum.

The ion implant tool of known type has the ion source of the bundle produced containing ion to be implanted.Ion beam is conducted through the region of the uniform magnetic field in ion filter to be isolated than the space provided between intrafascicular ion by different every electric charge momentum (momentum over charge) (mv/e).Mass selector slit stops any less desirable ion and allows the ion expected to pass through, and alternatively by electrostatic accelerator, arrives Processing Room so that in implanted semiconductor substrate or wafer.In order to increase productivity, wafer in batch can be processed by batch-wafer being installed to mounted surrounding of taking turns with the processing rotated around axis simultaneously, passing through ion beam one by one to make the wafer on wheel.Processing wheel axis simultaneously towards with away from Shu Pingyi to be provided the bidimensional mechanical scanning of wafer by ion beam, thus guarantee that all parts of wafer are implanted, although ion beam can have the cross-sectional area less than chip area when clashing into wafer.

Known implanting device is in batches a modified example for above-mentioned general type, and it has large processing wheel and radial scan ion beam, and described large processing wheel has fixing vertical axis.

The implanting instrument of known type produces the so-called ribbon beam of ion in addition, has the major dimension being enough to extend and just crossing single wafer.Such ribbon beam arrangement requirement only carries out mechanical scan with a size transverse to ribbon beam plane to wafer.This is normally realized by the translation scan clamper carrying single wafer, makes once to implant a wafer continuously.The quality choice ion filter of magnetic is used for the plain bending ribbon beam transverse to ribbon beam, and the relatively narrow slit making it possible to extend by being parallel to ribbon beam plane selects the expectation ion from ribbon beam.Selectively, if ion beam is bending in banded plane, then make band shape focus in the x-direction the focus of (banded plane), before being again expanded, passing narrow quality choice slit and being calibrated to ribbon beam.

Summary of the invention

A scheme of the present invention provides the ion source component for ion implantation device, comprising: vacuum chamber; Arc chamber in described vacuum chamber, described arc chamber has linear dimension and comprises the wall of the antetheca extended along described linear dimension; Gas source, it comprises kind to be ionized in ion source to provide the ion needed for implantation; At least one electrode in arc chamber, when being electrically biased, described electrode is suitable for being provided for carrying out Ionized electron source to described kind; The ion extraction slit alignd with described linear dimension in described antetheca, the length of wherein said extraction slit is at least 100mm; And magnetic field device, it provides the magnetic field along the described linear dimension of arc chamber to spiral along described field in described indoor to limit electronics, described magnetic field has magnetic flux density, and described magnetic flux density has along described linear dimension the non-uniformity being less than 5% in the length of described extraction slit.

In one embodiment, described magnetic flux density has the non-uniformity being less than 1% in the length of described extraction slit.

In another embodiment, the described magnetic flux density in the described magnetic field in the length extracting slit is equal to or less than 500 Gausses.Then, this magnetic flux density can between 200 gaussian sum 300 Gausses.

In another execution mode, described magnetic field device comprises coreless electromagnetic saddle coil.Described saddle coil can be installed to the outside of described vacuum chamber.

In another execution mode, vacuum chamber comprises the first tubular portion and the second tubular portion be made up of non-ferromagnetic metal, described second tubular portion and described metal first tubular portion electric insulation and end to end with described metal first tubular portion, and described arc chamber is installed on the end away from described metal first tubular portion of described second tubular portion, thus be positioned at described metal the first tubular portion and with described metal first tubular portion electric insulation, described electromagnetism saddle coil is installed to around described metal first tubular portion.Described gas source can be provided for making the H for implanting ⁺the sources of hydrogen of ion.

In another execution mode, two described electrodes are located toward each other along described linear dimension, are provided in the plasma space that the whole length of described the ion extraction slit extends between which.

Another program of the present invention is provided and produce ion so that be extracted as the method for ribbon beam by the extraction slit of the slit length with at least 100mm in ionogenic arc chamber, comprise the steps: the gas containing kind to be ionized to be imported in arc chamber, to provide the ion needed for implantation; Bias electrode in arc chamber to provide electron source, thus generates the plasma containing required described ion in arc chamber; And magnetic field is applied in arc chamber, described magnetic field aims at the described plasma generated to be restricted to the front in arc chamber in the length of described slit and the region extended in the length of described slit with extraction slit, wherein said magnetic field has magnetic flux density, and described magnetic flux density just has the non-uniformity being less than 5% over the length of the slit.

By guaranteeing the magnetic flux density of the limit magnetic field in arc chamber above the length extracting slit evenly, the homogeneous plasma of the length extending slit can be produced, making it possible to be used in uniform density above the larger cross-section size of band to extract ribbon beam.

Accompanying drawing explanation

Below with reference to accompanying drawings embodiments of the invention are described, wherein:

Fig. 1 is front view and the partial sectional view of implementing ion implanter of the present invention.

Fig. 2 is the plane graph of the implantation wheel of the ion implanter of Fig. 1.

Fig. 3 is partial cross section's amplification stereogram of the wheel hub implanting wheel.

Fig. 4 implants the wheel rim of wheel and is installed to front view and the cutaway view of the substrate holder on it.

Fig. 5 is the amplification stereogram of the part of the wheel rim intercepted along cross section along the line Y-Y in Fig. 4.

Fig. 6 a is the plane graph for the installed surface of the mounting blocks of mounting substrates clamper in wheel rim.

Fig. 6 b is the cutaway view of the mounting blocks intercepted along the line B-B of Fig. 6 a.

Fig. 7 is the ionogenic stereogram of implanting device.

Fig. 8 is the ionogenic schematic cross sectional views of Fig. 7.

Fig. 9 be in the plane of the extraction slit in source magnetic field intensity relative to the drafting figure of the distance of the center line apart from ionogenic arc chamber.

Figure 10 is the schematic diagram for the magnet structure of bending ribbon beam in ion implanter.

Figure 11, Figure 12 and Figure 13 are the schematic diagram of the effect at the edge that uniform magnetic field in the bending magnet of ion implanter is shown.

Figure 14 is the diagrammatic representation of conjugated image distance relative to the source/target range for exemplary bent magnet.

Figure 15 is the stereogram of the magnet structure of ion implanter.

Figure 16 is another view of the magnet structure of Figure 15, but removes one group of magnetic pole for clarity.

Embodiment

Fig. 1 is the indicative icon of the implanted device as embodiments of the present invention.Implanted ions carries out in vacuum environment, and the groundwork feature of execution mode is included in vacuum chamber.In execution mode in FIG, vacuum chamber is with three interconnective part displays.Part I is Processing Room 10, when along the direction of arrow 11 viewed from the top of Fig. 1 time, Processing Room 10 has circular contour.Processing Room 10 comprises Part-spherical lower wall branch 12 and relative Part-spherical upper wall branch 13, defines the dish type vaccum case be thickened in the center of dish.This Processing Room 10 takes turns 14 containing the processing extended in the plane of dish type room 10, to rotate around the vertical axis of the center rough alignment with dish.Carry around wheel 14 in Processing Room 10 for the treatment of substrate, will be further described in more detail and explain below.

The Part II of vacuum chamber to be included in High Pressure Shell 15 and to be made up of ion source structure 16 and quality choice magnet structure 17.The ion being expected to be useful in implantation (is H in one embodiment ⁺ion) restraint generation in ion source structure 16 and be directed in magnet structure 17.Magnet structure 17, for curved ion bundle, allows from the undesired ion the follow-up intrafascicular filter tow guided towards Processing Room 10.To be described below in greater detail ion source structure 16 and mass selection structure 17 below.

The Part III of vacuum chamber is made up of accelerator tube 18, and the high-pressure section of the vacuum chamber in High Pressure Shell 15 and Processing Room 10 are interconnected by accelerator tube 18.Accelerator tube 18 comprises electrical insulation parts and remains on the voltage place high relative to Processing Room 10 to allow ion source structure 16 and mass selection structure 17.The electrode be included in accelerator tube is biased to make the ion beam imported from mass selection structure 17 accelerate to required implantation energy to be delivered to Processing Room 10 by electrostatic.By one or more vacuum pump, all part pumps of vacuum chamber are played decompression, schematically show a vacuum pump at 21 places of Fig. 1.

Turn to Fig. 2 now, show the plane graph of processing wheel 14.Processing wheel comprises wheel hub 20 and the wheel rim 22 be connected with wheel hub 20 via multiple spoke 24.Wheel rim 22 is formed as multiple (being 12 in this embodiment) segmentation 22a, 22b...22I, and in the execution mode of Fig. 2, each segmentation forms the arc of 30 ° of wheel rim.

Each segmentation of wheel rim 22 carries the substrate support 26 of multiple equi-spaced apart successively, and substrate support 26 trailing wheel fate section outward radial extends.Therefore, the processing of Fig. 2 takes turns 14 around wheel rim 22 with 60 substrate supports 26.Each strutting piece 26 provides wafer, and the shape and size of wafer are mated with wafer to be processed.Importantly, if wafer to be processed is the Circular wafer of 150mm, the stayed surface of strutting piece 26 is then made to have similar size and dimension, and the diameter of processing wheel is for providing the circumferential periphery of at least 60 × 150cm, 60 strutting pieces (and 60 wafers on strutting piece) are made to be accommodated in the peripheral surrounding of wheel and not overlapping.Except the circular shaped support of 150cm, other shape and size can be provided to adapt to the shape and size of other wafer, but in each case, processing wheel is formed with the circumferential periphery of at least N × a, N is the quantity of die support and a is the minimum widith of wafer to be processed herein.If wafer is circular, then a is diameter.

The key property of execution mode is, there are at least 50 (being 60 in this embodiment) die support 26 in processing wheel, the ion beam of the wafer and ion source structure 16 and quality choice magnet structure 17 combine with accelerator tube 18 on the stayed surface 26 that provides and point to and process and take turns, ion beam has the energy of at least 200keV and the ionic current of at least 50mA.Then, 10kW is at least by restrainting the power being delivered to wafer.By guaranteeing that processing wheel can hold at least 50 wafers simultaneously, between processing period, swiveling wheel allows to share between the wafer of this beam power on wheel, makes each wafer only receive the power that can consume or remove, and does not make wafer overheated and damage wafer.

Referring again to Fig. 2, spoke 24 can have double duty.First, spoke 24 (mode of bicycle quick can regulate this tension force, hereafter will describe in detail) under tension and extend between wheel hub 20 and wheel rim 22.By keeping spoke 24 under tension, 12 segmentation 22a-22I of wheel rim 22 are pulled towards wheel hub 20 and are along the circumferential direction compressed to together.Therefore, wheel rim 22 is made to become hard in a rotative pattern by the tension force in spoke 24.It is noted that in embodiments, spoke 24 is equally spaced and radial aligning around wheel hub 20 and wheel rim 22.By providing the axial rigidity between wheel hub and wheel rim along the planar shaped acutangulate line tensioning spoke 24 of processing wheel 14, as shown in the best in Fig. 4 described below.If expect the rotation hardness increasing processing wheel 14, then stiffener can be adopted.Or, the pole that between wheel hub 20 and wheel rim 22, non-static fields extends can be arranged on.Six such being arranged symmetrically with of bar can be tensioned to provide torsional stiffness along two direction of rotation.In another embodiment, torsional stiffness is aimed at by the non-static fields of spoke 24 to provide, to form staggered pattern in the style of bicycle quick taking line as spoke.

The possible purposes of second of spoke is, via wheel hub 20, the cooling fluid of the outside from dish type vaccum case is transmitted to wheel rim 22.Then, the cooling fluid at wheel rim place is transmitted to each substrate support 26 successively so that for the wafer be installed on substrate support 26 provides cooling during implanting.

Fig. 3 illustrates the angle projection that wheel hub 20 is described in detail in detail with broken section.Wheel hub comprises band slotted disk 30 and lower ring 32, and upper band slotted disk 30 and lower ring 32 are by connecting plate 34 interval and support, to form right cylinder roughly.The top edge of connecting plate 34 is formed with upper flange 36, and upper manifold 38 is clipped between the upper flange 36 of connecting plate 34 and the tabular surface of upper band slotted disk 30.Equally, the lower limb of connecting plate 34 is formed with lower flange 40, and lower manifold 42 is clipped between lower flange 40 and lower ring 32.

What the surface circumference around upper manifold 38 extended is the first and second circular upper channels 44,46 being ' U ' tee section in this embodiment.The rotation axis coincident of 14 is taken turns with the processing at the center through wheel hub 20 respectively in the center of two circles, but the first upper channel 44 is radially spaced from the second upper channel 46 (having different circle diameters).The adjacent formation of outward flange of two passages 44,46 and upper manifold.Opening surface and corresponding internal path 48,50 registration be formed in upper band slotted disk 30 of these passages.The openend registration of each spoke 24 that internal path 48 is inserted with the opening passed through in the periphery wall of wheel hub 20 successively.

In order to form each spoke 24 to the Fluid Sealing of wheel hub 20 and in order to allow each spoke 24 to be tensioned, each spoke is formed with ' O ' shape ring support 51a, the 51b in pair of U-shaped cross section, and described ring support comprises the paired radial rib of the end around spoke 24.In use, elastomeric ' O ' shape circle between often couple of rib 51a and 51b, but can eliminate these parts for clarity in the accompanying drawings.' O ' the shape circle in each spoke and accept spoke end wheel hub in opening inner cylindrical surface between form the piston seal pair of series connection.

That face that the end farthest away from spoke of O shape ring support rib is formed is used as spoke flange 52, and spoke flange 52 has the area supported engaged with the radially-inwardly face 54 of corresponding stretcher boss 56.Stretcher boss 56 has the screw thread (invisible in figure 3) be formed on its shank.The corresponding threaded engagement of the screw thread on the shank of each stretcher boss 56 and the inside of the corresponding opening in the periphery wall being formed in wheel hub 20.

In use, under spoke 24 is placed in tension force, each stretcher boss 56 is rotated in a clockwise direction and boss is screwed in the threaded opening of the correspondence in wheel hub 20.This makes below 54 abutting the spoke flange 52 that formed by the outside of O shape ring support 51b and engaging of stretcher boss 56, and is drawn in wheel hub 20 end of spoke 24.The adjustment of the tension force of multiple spoke 24 can carry out the uniformity of the circumference compression guaranteed around wheel rim 22 in known manner.

Medial compartment 53 is formed between two O-ring seals being formed by seat 51a, 51b.Room 53 is connected to second ' U ' shape upper channel 46 via the second internal path 50.By the backing vacuum pump (this pump is schematically shown in 57 places in FIG) in vacuum chamber outside successively this passage 46 of pumping, thus form vacuum in medial compartment 53.The object done like this avoids the o ' shape around Processing Room 10 with the cooling water leakage of about 40psi (275kPa) pumping in seat 51a, 51b to enclose and enter by pumping discriminatively may remain on about 10 ^-4safe sealing arrangement is provided in Processing Room 10 under the vacuum of Pascal.

Similar layout is adopted to catch and the spoke 24 in the lower ring 32 of pulley hub 20; Each spoke has a pair O shape ring support, and the outside of the end farthest away from spoke of O shape ring support provides the area supported 52 after stretcher boss 56 corresponding to engagement.There is external screw thread with the screw-threaded engagement in the hole formed in the outer wall of lower ring 32 like this.

Be inserted into spoke 24 in band slotted disk 30 along between first direction carrying wheel hub and wheel rim (such as, wheel hub is to wheel rim) cooling fluid, and be inserted into the cooling fluid of the spoke in lower ring 32 along (such as, wheel rim is to wheel hub) between contrary direction carrying wheel hub 20 and wheel rim 22.As hereafter described in detail, this allows to be transmitted to wheel rim (such as from the outside of Processing Room 10 via wheel hub 20 through the fluid of cooling, along upper spoke), and from wheel rim to substrate support 26, enter the heat caused in the wafer on substrate support herein due to implanted ions and be transmitted in cooling fluid.Then, (heating) cooling fluid via (under) spoke (in this embodiment) is pulled away, and gets back to wheel hub, then away from Processing Room 10 to carry out reclaiming or abandoning.

The supply of (static) cooling fluid does not form part of the present invention with the mode that return route (not shown) is connected with wheel hub 20, and be not therefore described, wheel hub 20 rotates in use certainly.These are known for the technology making fluid transmit between stationary object and rotating object in the art.It is noted that passage 44,46 up and down in manifold 38,42 extends around the periphery of wheel hub 20, thus form the shared fluid passage of all 60 spokes 24.

Forwarding Fig. 4 to now, showing along the line X-X in Fig. 2 by processing the cross section of wheel 14.This represent by the processing wheel rim 22 of wheel 14 and the close-up cross-sectional of substrate support 26.

Wheel rim 22 is formed as the segmentation 22a...221 of ring, illustrates as best in Fig. 2, and provides mechanical support for spoke 24.What the periphery around wheel rim 22 extended is multiple mounting blocks 60.Each mounting blocks 60 is fixed on the upper and lower surface of wheel rim 22.This some the best can be found out from Fig. 5, and Fig. 5 shows the stereogram of the mounting blocks 60 that the midplane shown in the line Y-Y in such as Fig. 4 is cut open.Each mounting blocks 60 is generally linear pattern, and main shaft extends along the circumference of wheel rim 22.But the mounting blocks of each mounting blocks 60 circumferentially with adjacent is spaced apart: namely, and the main shaft of each piece 60 is shorter than 360/N, wherein N is the quantity (being 60 in the embodiment of fig. 2) of substrate support.As shown in Figure 4, each mounting blocks 60 utilizes screw 62a, 62b to be fixed to one (or across two, as Fig. 5) in the segmentation 22a...221 of wheel rim 22.As selection, mounting blocks 60 can be welded to wheel rim segmentation 22a...221.

Each mounting blocks 60 serves many purposes.First, mounting blocks provides a pair threaded hole on first radially inner, and in use, corresponding stretcher boss 64 is screwed in threaded hole.As the stretcher boss 56 remained on by spoke 24 under tension in wheel hub 20, the stretcher boss 64 be inserted in mounting blocks 60 has by their central shaft separately to the hole of end extended to accept spoke 24.And as the hub end of spoke, the wheel acies of spoke 24 is provided with first and second ' O-ring seals seat 66a, 66b of a pair radial rib of the periphery be formed as around spoke.O shape circle (also for ease of clear for the purpose of in the accompanying drawings omit) in these 66a, 66b provides the Fluid Sealing between spoke 24 and mounting blocks 60 with the form of piston shell.

The radial inner face 68 of the radial internal rib part of O shape ring support 66b abuts the radially outward face of stretcher boss 64.Therefore, stretcher boss 64 moves in threaded hole by being spirally connected clockwise of stretcher boss 64, stretcher boss 64 be positioned in hole, successively by prop up face 68 and engage and away from wheel hub 20 radially outward compressive plane 68 increase the tension force on spoke 24.

In use, O shape in seat 66a, 66b circle forms corresponding medial compartment 67 between which, and medial compartment 67 is connected with the plenum passage 70 of circumferentially through each mounting blocks 60.As best shown in FIG. 5, these plenum passages are interconnected between the adjacent block 60 of the periphery around wheel rim by means of pipe segmentation 78.

The radially outward face of each mounting blocks 60 defines substrate supports installed surface 72, show in plan view substrate supports installed surface 72 in Fig. 6 a.Corresponding substrate support 26 comprises the arm 82 with the plane installed surface radially-inwardly pointed to, arm 82 registration and be fastened to the installed surface 72 of corresponding mounting blocks 60 by the bolt (such as) be applicable to.

The end bearing wafer clamper 84 away from mounting blocks 60 of the arm 82 of substrate support 26, in use wafer holder 84 supporting wafers 86.Arm 82 makes wafer holder 84 with the angular slope becoming 10 ° with the plane approximation of processing wheel 14, can find out best equally from Fig. 4.In embodiments, processing wheel rotates in a horizontal plane, and is expressed in wafer holder 84 by wafer 86 due to above-mentioned inclination angle centripetal force.

Elastic hot conductive material 88 is used to cover the upper surface of each wafer holder 84 being provided with wafer 86 in use.Multiple cooling duct 90 is formed in the lower face of wafer holder.These passages 90 are communicated with the radially inner installed surface of strutting piece 26 via the internal fluid channels in the arm 82 of substrate support 26.Respective channel 92a in these cooling ducts in arm 82 and the support installed surface 72 of block 60 and 92b registration.The inner passage in the arm 82 of substrate support 26 can be seen by 94a and 94b place in Figure 5, and these passages are through the cross section in Fig. 5 of bifurcated finger 82a and 82b of arm 82 herein.The end of the passage in arm 82 can be seen by 93a and 93b place in the diagram, the passage 92a in this end passage and mounting blocks 60 and 92b registration.

Referring again to Fig. 6 a and 6b, the pair of seal members being connected with cascade between passage 93a, 93b in the arm 82 of substrate support 26 and passage 92a and 92b in block 60, passage 92a with 92b is connected with the end of tubulose spoke 24 successively.Inner seal liner comprises the O shape circle in circular O shape ring support 76a and 76b be assembled in mounting blocks 60.The single larger O shape comprised in track type seat 74 for the shell body be connected with two passages 92a, the 92b at block 60 place is enclosed.Interior O-ring seals in present 76a, 76b and between the single outside seal in track type seat 74, the installed surface 72 of block 60 is formed with the recess 96 (in the cutaway view of Fig. 6 b, the best illustrates) forming medial compartment between series seal part.This medial compartment formed by recess 96 is connected with central aeration Pressure channel 70 (same cutaway view the best as Fig. 6 b illustrates) by boring 98a, 98b in block 60.

In the operation of implanting device, plenum passage 70 by emptying separately, thus provides differential pumping vacuum for the medial compartment 67 between the series seal part between each spoke 24 and mounting blocks 60 and for the medial compartment 96 between the series seal part that connects between the mounting blocks 60 of substrate support 26 and arm 82.Be connected with independent vacuum pump 57 (Fig. 1) via three the radial vacuum tubes 80 (in Fig. 2, the best illustrates) extended between the wheel rim and wheel hub 20 of wheel by the interconnective circumferential plenum passage 70 of pipe branch 78.Also show a kind of radial vacuum tube 80 so in the diagram, and this pipe 80 ends at wheel rim place in T junction 81, T junction 81 is interconnected in the pipe branch 78 between adjacent mounting blocks 60.In the diagram, for clarity, T junction 81 is shown as the mounting blocks separation be adjacent.The radial inner end of vacuum tube 80 wheel hub 20 place with before vacuum pumping expanding channels in the wheel hub that describes.Vacuum passage in wheel hub 20 is connected by means of the outside of means well known in the art and Processing Room 13 and backing vacuum pump 57 (Fig. 1) by rotating seal part.Importantly, the pump 57 for the cooling fluid housing in differential pumping Processing Room is separated with the pump (comprising the pump 21 in Fig. 1) of vacuum pump or each room for emptying implanting device.

More generally, this structure especially provides multiple dismountable cooling fluid in Processing Room 10 at the vacuum chamber of implanting device and connects.This detachable cooling fluid connects and is arranged on: (i) is as between the cooling channels 48 in the radial inner end of each spoke 24 of cooling water pipe and wheel hub 20, (ii) in the radial outer end of each spoke 24 and mounting blocks 60 between cooling channels 92a, 92b, and in passage 92a, 92b of (iii) each described mounting blocks 60 and the arm 82 of associated substrate strutting piece 26 between cooling channels 93a, 93b.

Passage 92a, 92b in cooling channels 48 in wheel hub 20, spoke 24, mounting blocks 60 and passage 93a, the 93b in substrate supports member arms 82 is interconnected to provide fluid conduit systems, thus to the cooling fluid that the cooling channels 90 in substrate support 26 supplies cooling fluid and receives from the cooling channels 90 in substrate support 26.Therefore, can find out, these cooling fluid duct comprise the fluid conductive members be connected in series, and comprise spoke 24 and mounting blocks 60.

Each the first and second seals comprising the series connection forming medial compartment between which during above-mentioned dismountable cooling fluid connects.For often kind of connection between spoke 24 and wheel hub 20, series seal part is the O shape circle formed in O shape ring support 51a, 51b of medial compartment 53.For often kind of connection between spoke 24 and mounting blocks 60, series seal part is the O shape circle formed in O shape ring support 66a, 66b of medial compartment 67.For passage 92a, 92b of mounting blocks 60 and often kind between passage 93a, 93b connection of substrate supports member arms 82, series seal part is form the O shape circle in corresponding interior O shape ring support 76a, 76b of medial compartment (recess) 96 and the larger O shape circle in outer track shape O shape ring support 74.

Medial compartment is connected with outside by means of exhaust manifolds by vacuum-chamber wall.In wheel hub, these exhaust manifolds comprise the passage 46 be communicated with medial compartment 53 via passage 50.

In wheel rim, these exhaust manifolds comprise the plenum passage 70 of the circumference in block 60, and plenum passage 70 is connected with medial compartment (recess) 96 with medial compartment 67 and (via passage 98a, 98b).Exhaust manifolds comprise interconnective pipe branch 78 and the 20 radial vacuum tubes 80 extended from wheel rim to wheel hub further, vacuum tube 80 successively via the expanding channels in wheel hub to wheel hub, be connected with the outside of vacuum chamber by rotating seal part.

In the above-described embodiment, exhaust manifolds are connected with independent vacuum pump 57, to keep vacuum in the medial compartment of series seal part, and guarantee that before cooling fluid leaks in the Processing Room 10 of vacuum chamber, remove any cooling fluid leaks.Optional for medial compartment vacuum pump, in some embodiments, it is enough for only using exhaust manifolds that medial compartment and air are ventilated.In another embodiment, double-exhausting conduit can be set to make it possible to be come by medial compartment the Purge gas of pumping drying, thus reduction cooling fluid (being generally water) leaks into the risk in the inside of Processing Room 10.

Referring again to Fig. 4, the rear of substrate support 26 is provided with continuous print ring baffle 99, substrate support 26 is installed on their respective mounting blocks 60 around the periphery of wheel.When in implantation process, wheel rotates, any ion beam through wafer holder 84 collected by this ring baffle.In this way, the substantial power of bundle, relatively high electric current and high-octane combination, around ring baffle distribution, result carrys out the distribution of the heat energy of self-absorption bundle.

As previously discussed, the key character of this execution mode of the present invention is, scan wheel 14 rotates around fixing axis, and project to implant along with the rotation of wheel the mobile bundle by the wafer of implantation position for having the ribbon beam of major dimension on wheel periphery, described major dimension is relative to wheel axis radially aligned and have the length being equal to or greater than and being installed to the radial extent of the wafer in die support at wheel peripheral region.At bundle not by the meaning scanned to implant coverage rate in types of flexure expansion, this ribbon beam can be regarded as immobilizing.But a small amount of positional jitter can be introduced in the plane of ribbon beam, thus smoothly cross banded intrafascicular any little scale unevenness.This shake may be periodic, and this cycle compared with the duration is short with always implanting, and the spatial magnitude of shake is little compared with the length in ribbon beam cross section.

In order to practicality, expecting that in processing, available minimum wafer size is at least the diameter (being assumed to be Circular wafer) of 100mm.Can also conceive non-circular wafer, and the common form of these non-circular wafers is square or band fillet or corner cut square.Under any circumstance, if the maximum radial dimension being installed to the wafer on wheel periphery is 100mm, so the major dimension radially of ribbon beam must be over 100mm.Further, it is expected that, guarantee H ⁺by in wafer insertion equably, thus above wafer, the doses change amount being preferably less than 10% is there is in ion above wafer area.Also can expect larger unevenness, so that produce treatment effeciency and make the damage risk of flake minimize.

In order to provide the ribbon beam projecting and have more than on the wafer in the Processing Room 10 of the major cross sectional dimension of 100mm, be guarantee that the bundle extracted from ion source 16 is also formed as the band shape of the major dimension with suitable size easily.

Fig. 7 and Fig. 8 shows ionogenic execution mode, and ion source can form the ion source 16 of ion implanter described herein.Fig. 8 is the ionogenic cutaway view in Fig. 7, the cross section that intercepts along ionogenic bundle axis and in the plane of the ribbon beam extracted.Importantly, in FIG, the bundle 100 extracted from ion source 16 is formed as the band shape in paper plane, thus the magnetic filter structure 17 in Fig. 1 is also in paper plane, that is in ribbon beam plane, approximately through this bundle of right-angle bending.Then, the H only comprising now expectation of magnetic filter 17 is come from ⁺the ribbon beam 101 obtained of ion has the major dimension of aiming at relative to the rotation radial direction of wheel 14 by expectation mode.

Ionogenic structure shown in Fig. 7 and Fig. 8 is conventionally known to one of skill in the art in a lot.Arc chamber 102 is arranged on one end place of installing cylinder 103, installs the left hand end (Fig. 8) that cylinder 103 is installed to insulating sleeve 104 successively.The right-hand member of cylindric insulating sleeve 104 is connected with cylindrical member 105, and cylindrical member 105 defines the part of the vacuum chamber of device.Cylindrical member 105 supports at its right hand end place and is used for supporting the structure 106 extracting electrode 107 movably.For clarity, extract electrode 107 to be shown as significantly in the figure 7 " floating ".Cylindrical member 105 forms the first tubular portion can be made up of non-ferromagnetic metal, and insulating sleeve 104 forms the second tubular portion of electric insulation.First and second tubular portions are end to end, and arc chamber 102 is installed on the end away from described metal first tubular portion of the second tubular portion.

When operating, by applying arc voltage between the main body and relative negative electrode 108 of arc chamber 102, in ionogenic arc chamber 102, form low-tension arc electric discharge.Negative electrode 108 relative to arc chamber main body negative bias and be arranged to the inside emitting electrons into arc chamber, then, make Accelerating electron by bias voltage.Negative electrode 108 is heated to provide the thermionic emission of electronics usually, and can be direct or indirect according to known technology heating.

Gas containing the atom expecting the kind implanted is imported in arc chamber 102 by conduit unshowned in Fig. 8.In this embodiment, this gas is hydrogen.The high energy electron launched by negative electrode 108 and the interaction of molecules of hydrogen gas, thus produce containing H ⁺the plasma of ion.

Antetheca on the right side of Fig. 8 extends along the linear dimension of arc chamber 102 and comprises the extraction slit 109 aimed at described linear dimension, can extract the H of expectation by extracting slit 109 from ion source ⁺ion, to form the ion beam of expectation.Negative electrode 108 is located toward each other along described linear dimension and is provided in the plasma space extracting and the whole length of slit 109 extends between which.In order to operate ion source, by operation connector 110, extraction electrode 107 is transferred to the left side of Fig. 8 so that before the arc chamber near slit 109 outside.The main body of arc chamber 102 is positively biased relative to extraction electrode 107, to provide electric field between the plasma in extraction electrode 107 and arc chamber 102, electric field by slit 109 and by the corresponding slit in electrode 107 by cation sucking-off from arc chamber, thus forms the ion beam expected.

Importantly, in this embodiment, ionogenic extraction slit 109 is relatively long in the paper plane of Fig. 8, roughly mate with the size of the slit 111 (Fig. 7) extracted in electrode 107, thus the shape of expectation is had from the harness that ion source extracts, as having the ribbon beam of the major dimension being at least 100mm in the paper plane of Fig. 8, and this size is enough to extend above the whole width of wafer to be implanted.

For the ion source of described type, customary means is that the direction of arrow mark B in Fig. 8 is comprising in the plane extracting slit 109 and between relative negative electrode 108, applying the magnetic field along the described linear dimension extension in arc chamber 102.Magnetic field B in arc chamber 102 is tending towards the region be restricted to by the electronics accelerated from negative electrode 108 along the line between two negative electrodes, because electronics is forced to spiral around the magnetic flux line in magnetic field.In this way, more effectively generate the expectation plasma in arc chamber 102, and plasma is also restricted to this range of linearity by magnetic field, the dead ahead of the extraction slit 109 in before arc chamber.

In the present embodiment, the magnetic field B in arc chamber 102 to locate and pair of saddle-shaped coil 112,113 around arc chamber 102 generates by being positioned at the outside of cylindrical member 105 and surrounding.Saddle coil 112 and 113 be arranged in symmetrically with the line established law engaging negative electrode 108 to and the either side of the plane of described line of halving, described plane also with extraction slit 109 established law of arc chamber 102 to and described extraction slit 109 of halving.Saddle coil 112 comprises the relative semi-circular portion 112a and 112b that are interconnected by axial component 112c with 112d (the latter is invisible in the figure 7).Second saddle coil 113 is formed by the semi-circular portion 113a interconnected by axial component 113c and 113d and 113b similarly.Liang Ge coil branch 112,113 is connected in series to produce the uniform magnetic field crossing arc chamber 102, and arc chamber 102 is aimed at along the direction of the arrow B in Fig. 8.Importantly, saddle coil does not use ferromagnetic core.

Known such saddle coil structure is used for providing the homogeneous area substantially in magnetic field in the space surrounded by coil.Importantly, the magnetic field produced by saddle coil 112,113 is being uniform above the approximate distance of magnetic direction, thus very even on the whole height of the arc chamber of field between relative negative electrode 108 in arc chamber.Fig. 9 is the center line of magnetic field intensity B relative to the extraction bundle in arc chamber 102, the drafting figure of the distance D at the middle part namely between negative electrode 108.Show and to the changes of magnetic field of 126.4 Gausses of off-axis 75mm distance, constitute the variable quantity being less than 1% from central point (on bundle axis) 125.6 Gausses.By providing this very uniform field in the whole length extracting slit 109 in arc chamber, also can provide uniform condition of plasma in the whole length of slit, thus the ribbon beam extracted can have uniform intensity on the whole width of major dimension.

More generally, need magnetic field device in arc chamber, provide described magnetic field, described magnetic field has magnetic flux density, and described magnetic flux density has along the described linear dimension in the length extracting slit the non-uniformity being less than 5%.

In the embodiment shown, cylindrical member 105 be made up of stainless iron and magnetic field can penetrate.The length of slit 109 can for 160mm be to produce the ribbon beam of this major dimension.Ion source can be biased in 100keV place relative to the final element of cylindrical member 105 and extraction electrode combination, makes the ribbon beam transmitted towards magnetic filter 17 from source be 100keV.

In order to obtain superperformance, magnetic field intensity required in arc chamber or magnetic flux density can be equal to or less than 500 Gausses, in embodiments, and can between 200 gaussian sum 300 Gausses.The electrical power that saddle coil disclosed in utilization produces this place to be needed is the rank of 500 watts.

Mentioned herein, the ribbon beam arriving the wafer on processing wheel 14 should along the radial direction of the rotation relative to wheel 14 for the wafer implanted provides uniform dosage.In order to make the film of silicon peel off, should by such as 5E16 (5x10 ¹⁶/ cm ²) dosage implant H ⁺ion.Although strict unlike manufacture semiconductor device with the requirement of peeling off the uniformity for dosage, expect uniform dosage, not only guarantee good spalling resistance and do not damage, and production efficiency is maximized.

Will be appreciated that the speed of the different piece of the wafer be arranged on processing wheel 14 through ribbon beam is proportional with the radial distance (R) apart from the rotation (see Fig. 4) of taking turns.As a result, the dosage utilizing the major dimension of crossing band shape (extending relative to wheel radial) to have in the ribbon beam wafer insertion of pole uniform strength will change by 1/R.In order to compensate this change, in one embodiment, ribbon beam is corrected to have the intensity gradient proportional with R along the major dimension of band.In embodiments, this is realized by the design of transformation magnetic filter 17.

As mentioned before, this magnet is arranged in bending ribbon beam in banded plane.Magnet 17 is designed to receive the direct ribbon beam from the desired width in source and transmit roughly the same width towards accelerator post 18 and only comprise H ⁺the ribbon beam of ion (in this embodiment) is so that implant subsequently.This function can be understood from the schematic diagram of Figure 10.Usually, ribbon ion beam is limited in cartesian coordinate system x, y, z, and wherein x is the major cross sectional dimension of ribbon beam, and y is the secondary sectional dimension of bundle, and z is the direction of bundle.In Fig. 10, the ribbon beam of the desired size of x is produced by ion source 120 and enters magnet structure 17.Cross x size bundle substantially parallel.In magnet structure, ribbon beam in banded plane bending about 90 ° and occur as parallel ribbon bundle 121, parallel ribbon bundle 121 has the width (width of x) identical with the initial Shu Jiben extracted from ion source.

Magnet structure 17 provides the region in the magnetic field of crossing ribbon beam in the y-direction.The x direction that band is crossed in magnetic field is uniform.As known to those skilled in the art, the charge particle of movement in the field demonstrates bending path, and its radius is the function (mv/e) of momentum and electric charge.The magnet structure of this general type is used for filtering the ion beam extracted from ion source in ion implant tool, thus prevents all kinds except expecting ion kind from arriving the crystal implanted.When implanting dopant to make electronic device when forming the structure of silicon, magnetic filter may need relatively high resolution, so that the dopant ion of expectation and other are distinguished the extraction with fairly similar mv/e value is intrafascicular.In this magnetic filter, narrow quality choice slit is used in the exit of magnetic filter usually to provide required mass resolution.So importantly, magnetic filter is used for making the ion of identical mv/e effectively to gather focus in the plane of bending of the exit magnet of filter, and quality choice slit can be positioned on herein to provide good resolution.

By comparing, the magnetic texure 17 in present embodiment does not attempt the focus gathered by the ion of identical mv/e in the x-direction, but is in fact remained in the outlet of filter by the whole width of ribbon beam.Because the implanting ions expected is generally H ⁺, therefore can provide satisfied mass resolution in application-specific preferably like this.The intrafascicular contaminated ion extracted from ion source 120 all has much higher quality, and this quality is hydrionic quality sum, therefore can be easy to distinguish.In fact, the pollutant in ion beam is deflected by magnetic texure 17 hardly.

The challenge of magnetic texure 17 is to guarantee other hydrogen ion intrafascicular for the intrafascicular elimination of implanting from transmitting, especially H ₂ ⁺and half energy H ⁺ion.Plasma in the ion source 120 formed by hydrogen comprises H usually ⁺and H ₂ ⁺ion (and some larger molecular hydrogen ions).Quality is H ⁺the H of ion twice ₂ ⁺ion defers to the path as shown in the dotted line 122 in Figure 10 by being tending towards.Half energy H ⁺ion be by from ion source 120 accelerate after and the H entered before magnetic texure 17 ₂ ⁺the decomposition of ion or dissociation generate.These half energetic ions can defer to the track as shown in the dotted line 123 in Figure 10.

As explained above, only require that the magnetic texure 17 in present embodiment is main by the H than expectation ⁺the high or low factor of ion is or the ion of larger mv/e distinguishes.Keep ribbon beam because bending magnet is arranged to and bends bundle in the plane of band shape, needing in fact total amount of bow to guarantee this level of resolution.Magnetic texure 17 is applied to the total bending of ribbon beam should be at least 75 °, is 90 ° in this embodiment.Less bending bundle by needs is being exited magnetic texure and is being entered the longer flight path between accelerator post 18.

Referring now to Figure 11, this figure is schematically showing and its impact for ribbon beam of the shape of uniform magnetic field in magnetic texure 17.The porch that the single region 125 of uniform magnetic field is illustrated in ribbon beam 127 has linear edge 126, and ribbon beam 127 is arranged to input bundle direction at 45 °.Field areas has the outlet edge 128 parallel with ingress edge 126.If carry out the field intensity in setting regions 125 relative to the mv/e value entering intrafascicular expectation ion, make central authorities enter constriction 129 90-degree bent in field region 125, then outlet edge 128 is also by the angle at 45 ° with emerging beam 130 shape.Have and expect that the beam ion of mv/e value defers to circular path by the uniform magnetic field 125 with radius r, and can find out, along the x direction (as limited above) of bundle, ribbon beam has the major dimension identical with on entrance by outlet, and the constriction crossing the band of emerging beam 130 parallel (in xz plane), supposes that the constriction entering bundle 127 is parallel in xz plane.It is equally important that bundle intensity distributions is in the x direction constant.

If the normal of entrance field edge 126 restraints angled α (instead of as shown in Figure 11 45 °) with entering, width 2d enter ribbon beam at outlet edge 128 place with width 2d tan α from magnet out.Such as, if ingress edge 126 is 55 °, then bandwidth is in exit expansion 42%.

Figure 12 shows the effect of the ingress edge 126 forming the convex curvature shown in dotted line had in Figure 12.If edge 126 is still at 45 ° with the central constriction 129 entering bundle, this bundle is not by occurring by the outlet edge 128 of the Curvature Effect of ingress edge 126.But constriction 130 is Δ x from the displacement towards central constriction 129 in radial _iedge 128 out, and radial outer constriction 131 is approximately Δ x at the displacement away from central constriction _oedge 128 place out.This point is illustrated by the dotted line in output bundle 132 in fig. 12.Except inside and outside constriction 130 and 131 is except the thin tail sheep at outlet field edge 128 place, the angle that the direction of these constrictions is little with central constriction 129 one-tenth.Can find out, in fact, compared with central constriction 129, each in inside and outside constriction 130 and 131 has walked slightly short distance in uniform magnetic field 125, and therefore they are bendingly slightly less than 90 °.If recessed curvature is applied to outlet field edge 128, as shown in figure 13, the deviation of this angle of emergence of inside and outside constriction 130 and 131 can be corrected, and makes the constriction of outgoing ribbon beam again parallel.But constriction 130 is still towards center constriction 129 displacement in radial, radial outer constriction 131 is still away from the displacement of central constriction 129.The change of beam intensity can be applied for the x direction of crossing the ribbon beam exited from magnet in the effect of this displacement through the constriction in the ribbon beam of field region 125.As can be seen from Figure 13, constriction in the left side of the center line of emerging beam 130 is compressed in fig. 13 slightly, and slightly expand in (the x direction along bundle) at the constriction on the right side of median bundle, the beam intensity at left hand edge in ribbon beam is increased relative to the beam intensity at the right hand edge place at emerging beam.

Be parallel to the lateral attitude x inputting banded axis _sthe position x in the ray arrival image space in source is left at place.For parallel entrance and exit pole edge 126 and 128 and with entrance pole edge 126 established law of the angled α in input bundle direction to the situation of simple bending, x and x _sproportional.Approx, x=x _stan α.For the situation of α=45 degree, as shown in figure 11, x=x _s.Regardless of the value of α, intensity is always the function of x, namely

$I_0=\frac{\mathrm{dN}}{\mathrm{dx}},---1$

Wherein, the quantity that dN refers to the particle dropped in space length dx is measured.If magnetic bends adjustment in field by the ray deflection in image space to reposition

$\stackrel{\‾}{x}=f\left(x\right),---2$

Then new intensity is

$I\left(\stackrel{\‾}{x}\right)=\frac{\mathrm{dN}}{d\stackrel{\‾}{x}}=I_0/\frac{\mathrm{df}}{\mathrm{dx}}=I_0\frac{\mathrm{dx}}{d\stackrel{\‾}{x}}---3$

If the displacement that new intensity distributions compensates the central axis that distance exports ribbon beam around the centerline axis parallel with output ribbon beam is R ₀axis rotate target substrate, be then necessary that

$I\left(\stackrel{\‾}{x}\right)=I_0(1-\frac{\stackrel{\‾}{x}}{R_0})---4$

Combination identity 3 and 4, obtains simple differential equation

$\frac{\mathrm{dx}}{d\stackrel{\‾}{x}}=1-\frac{\stackrel{\‾}{x}}{R_0}---5$

As x=0, application boundary condition obtain

$x=\stackrel{\‾}{x}-\frac{{\stackrel{\‾}{x}}^2}{2R_0}---6$

the solution of secondary equation be

$\stackrel{\‾}{x}=R_0(1-\sqrt{1-\frac{2x}{R_0}})---7$

Suppose x < < R ₀, it is beneficial that separate as follows with the power expansion of x:

$\stackrel{\&OverBar;}{x}=x+\frac{R_0}{2}{\left(\frac{x}{R_0}\right)}^2+\frac{R_0}{2}{\left(\frac{x}{R_0}\right)}^3...---8$

Therefore, ray Δ x apart from its displacement without adjusting position x is

$\mathrm{\&Delta;x}=\stackrel{\&OverBar;}{x}-x=R_0\{\frac{1}{2}{\left(\frac{x}{R_0}\right)}^2+\frac{1}{2}{\left(\frac{x}{R_0}\right)}^3....\}---9$

Further, relative displacement approximate conduct square change.

Circular field edge to provide in radial strength correction effectively, because their produce relative to ray position adjustment, ray position just depend on square.

Although Figure 11 shows the uniform magnetic field as having entity linear edge 126 and 128, in fact there is scattered field in these edges.Magnetic pole by respective shapes is formed by uniform field region 125, and magnetic pole is positioned at above and below ribbon beam, has the gap adapted to through the small size (y) of the bundle magnetic pole between magnetic pole.In the entrance and exit edge of pole element, scattered field has field component by above and below the mid-plane in the x direction between two magnetic poles, can find out, in these scattering regions, the ratio of the x component in magnetic field depends on the angle [alpha] between bundle and the normal of pole edge entering (or leaving) field areas.

The bundle of particle in the uniform field region above or below the intermediate symmetry plane entering magnet is through the magnetic force be subjected to during bending scattering field wire in the y-direction.With reference to Figure 13, restrainting relative to the entering angle of the normal at uniform field edge is α _s, angle of emergence α _i.For in often kind of situation on the occasion of, concentrate through the magnetic force on the particle of scattered field, magnetic force acts on particle along the direction towards mid-plane.H.A.Enge (Focusing of Charged Particles, Vol II, Ed.A.Septier, AcademicPress, 1962, p215) has carried out quantitative description to this phenomenon.The ion optics focal length relevant to scattered field is provided by following formula

$f=\frac{r}{\tan \mathrm{\&alpha;}}$

Wherein, r is the bending radius of particle in the uniform field of magnet, and α is the rotation relative to input (and output) Shu Fangxiang, as shown in Figure 13.The front entering field edge at magnet is departed to the particle of the mid-plane of bundle with distance p, y focusing effect crosses mid-plane with the outlet edge certain distance q apart from magnetic field subsequently by making particle.Distance p and q is shown in Figure 11.Position for the input bundle of the distance p in front, input field edge can be regarded as being in the optical line object that particle departs from the position of mid-plane from it.Distance q can be regarded as the distance from outlet edge to the conjugated image of input line object.

For α _sand α _ithe situation of=45 ° of the two equal 90-degree bents, as shown in figure 11, q/r to the drafting figure of p/r as shown in Figure 14.The typical geometry of the distance of approximate 2r before being positioned at magnet for source, the vertical line in Figure 14 from left to right corresponds to the object distance of the innermost constriction of radial direction (the bending radius r relative to magnet) of ribbon beam, center constriction and the outermost constriction of radial direction.Should be noted that (as shown in figure 11), the image distance (q/r) for these three kinds of constrictions is extremely different, and this makes the line 135 crossing outgoing ribbon beam represent the image in source or enter the object line 136 of bundle 127.Can find out, this image line 135 is relative to the direction high inclination of emerging beam 130.

The y plane of delineation that this height rotates is less desirable for emerging beam 130, and wherein bundle of particle must walk certain distance, and through accelerator before arrival target substrate.

The angle of y image 135 in emerging beam 130 is changed by the change entrance in uniform field region and/or the shape of outlet edge 126,128.But, only can not obtain by means of single ingress edge 126 and outlet edge 128 expectation strength crossing beam width as above and change and the expectation of y image angle is corrected.

Referring again to Figure 10, magnet structure 17 is separated into two extremely to 140 and 141.The structure of magnet structure 17 can be understood best from Figure 15 and Figure 16.

But Figure 15 is along the line 142 in Figure 10 the simplification stereogram of the magnet structure intercepted from the position of the paper plane slightly over Figure 10.Figure 16 is also be figure slightly over paper planar interception along the direction of the arrow 143 in Figure 10.In figure 16, the first half of magnet assembly be removed in case the magnetic pole strength of the Lower Half of structure is provided know view.Magnet assembly comprises first to relative pole element 140a and 140b.Pole element 140a and 140b presents the magnetic pole strength of correspondingly-shaped each other, and the interval between them is enough to the y size adapting to ribbon beam.Especially the face with reference to Figure 16, pole element 140a and 140b presents convex ingress edge profile 145 and concave exit edge contour 146.Magnet structure 17 has second further to relative pole element 141a and 141b.These second pole elements are also correspondingly formalized, to provide similar gap to hold ribbon beam in the y-direction.The face of the second pole element 141a and 141b presents recessed portal edge contour 147 and convex shaped exit edge contour 148.

Magnet structure supplies energy by the winding 150,151 on opposing polarities part, and magnetic pole is interconnected by iron yoke structure 152 magnetic.Importantly, winding 150,151 is arranged to and guarantees that the magnetic field between often couple of pole element 140a, 140b and 141a, 141b has identical polarity, to bend ribbon beam along identical direction.Both pole element 140a and 141a all can be surrounded by common winding 150, and pole element 140b and 141b can be surrounded by common winding 151.But, if expect the field intensity controlled separately between often couple of pole element 140a, 140b, 141a, 141b, independent winding can be set equally on each pole element or replace with common winding.Independent winding also makes the residual magnetic field in the region between two magnetic poles minimize.

By arranging two groups of pole elements, four uniform field edge contours are altogether presented, for obtaining the control of the intensity distributions in the x direction along outgoing ribbon beam and provide the additional degree of freedom to make it towards the expectation vertical direction of crossing emerging beam 130 to the correction of y angular image plane simultaneously to ribbon beam.

In fact, second couple of magnetic pole 141a, 141b are arranged as uniform field region and provide curved edge, the outer constriction of the radial direction some y being defocused be applied to ribbon beam.If constriction and the edge angle between the normal at this some place near ingress edge is negative (angle [alpha] as shown in fig. 13 that _sand α _ijust be regarded as), then there is defocusing in the y-direction.

By means of the magnetic mechanism of Figure 15 and Figure 16, the beam bending of 90 ° is the first bending and 30 ° second bendingly to obtain subsequently by 60 ° altogether.The pole edge shape of two pole pairs 140a, 140b, 141a, 141b is coordinated, so that the radial strength change realizing expecting is to correct the 1/R velocity variations of the wafer through bundle simultaneously, and generated the conjugated image line of source slit in emerging beam by magnet structure, magnet structure is in the pre-position of porch of accelerator heap 18 and substantially vertical with ribbon beam direction.In this way, magnetic texure can near the y focussing plane that accelerator piles 18 image (see Fig. 1) of aggregate source line.

In order to determine the correct shape of pole edge in magnet structure, pole edge can be described to the mathematics multinomial of quadravalence (such as) or be described as cubic spline function, then by using standard mathematical optimisation technique (such as, cubic convergence method (the OptimizationTheory With Applications described by Donald A.Pierce, Doves Publications, Inc., 1986, pp 274-322)) determine multinomial or spline coefficients.

In a word, magnet structure 17 is designed to provide following function:

A) hold the ribbon beam of at least 100mm major cross sectional dimension and bend ribbon beam in band plane;

B) for bundle provides sufficient integrally bending, spatially high or low than expectation ion by having or the ion of the mv/e value of larger factor and the beam ion of expectation are differentiated and are opened.In one embodiment, this resolution is in the trace of magnet structure, is namely realized by the outlet orifice plate of magnet.But, importantly to realize this resolution before the outlet opening of accelerator heap, thus avoid less desirable ion to arrive target substrate;

C) pole element of magnet structure is shaped to provides region in the edge in uniform field region, described region is shaped the intensity regulating outgoing ribbon beam, thus by means of the radial distance R apart from wheel axis for providing dosage compensation to the wafer place implanted on wheel that relies on of chip speed; And

D) with above-mentioned scattered field profile in magnet structure is adapted so that emerging beam focuses in the y-direction in transverse to the plane of emerging beam, and described plane is approximately perpendicular to bundle c) simultaneously, and in the position of the input object focus near accelerator heap 18.

As mentioned above, these targets can arrange two pairs of magnetic poles by providing in the plane of crossing ribbon beam in the magnet structure of the uniform magnetic field of identical polar and corresponding entrance and exit pole edge be bent to provide the Strength Changes of expectation and y focusing effect to realize.Although disclosed two magnetic pole groups, similar target by realizing more than two magnetic pole groups, or can have been realized by the single magnetic pole group of the magnetic pole strength in the region between entrance and exit pole edge with depression.

Various execution mode has been provided in order to clear and complete.By the introduction of this specification, other execution mode of the present invention it will be apparent to those skilled in the art that.There have been described herein the method detailed for implanting and system, when result falls within the scope of the present invention, any other method and system can be used.

By means of only several detailed descriptions described above in the various ways that the present invention can take.For this reason, this detailed description is intended to by way of example, instead of the mode by limiting.The claim only comprised below all equivalents is intended to limit scope of the present invention.

Claims (18)

1. by the ion implantation device in implanted ions plane workpiece, each workpiece all has minimum widith a in the plane of described workpiece, and described device comprises:

Vacuum chamber;

Ion beam maker in described vacuum chamber, it is arranged to the ion beam operationally formed for implanting, and described harness has the beam electronic current being not less than 50mA and the beam energy being not less than 200keV, described Shu Zhixiang implantation position; And

Workpiece support is taken turns, it is mounted for and rotates around axis in described vacuum chamber, described support wheel has multiple workpiece support at the common radii place be positioned at around described periphery of taking turns, and the workpiece on described strutting piece is passed through described implantation position along the circular scan path limited by described periphery of taking turns by the described rotation taken turns continuously thus;

Wherein, described support wheel has the girth being not less than 50*a at described peripheral region, and has the described workpiece support being no less than 50;

Wherein, the described rotation of described workpiece support wheel can translationally be fixed;

Wherein, described workpiece support on described wheel is arranged to for supporting plane type workpiece, each workpiece all has the predetermined linear size in the plane of described workpiece, and when on described trade union college to described strutting piece, described predetermined linear size and described scanning pattern established law are to extension; And

Wherein, described ion beam maker is arranged to and roughly static described bundle is formed into described implantation position along fixing beam path, and be further adapted for make ion beam described in described implantation position place have with described scanning pattern established law to sectional dimension, described sectional dimension is at least 100mm and is enough to implanting ions above the gamut of the described predetermined linear size of the described workpiece on described strutting piece.

2. ion implantation device as claimed in claim 1, wherein, described ion beam maker is formed and comprises H ⁺the described bundle of ion.

3. ion implantation device as claimed in claim 1, wherein, the described workpiece support described workpiece be arranged as above it provides heat sink accordingly, and described support wheel comprises supply cooling fluid so that cool described heat sink cooling fluid duct.

4. ion implantation device as claimed in claim 3, wherein, comprise cooling system, described cooling system is connected cooling fluid is supplied described cooling fluid duct, thus removes heat from each described corresponding heat sink power with at least 200W.

5. ion implantation device as claimed in claim 1, wherein, described workpiece support wheel has the wheel hub being mounted for and rotating around described axis, and comprises further:

The continuous periphery ring of described workpiece support is provided; And

Multiple spoke, its be with described axis established law to wheel plane in the described ring be centrally placed on described wheel hub provide support;

Wherein, described spoke is tensioning between described wheel hub and described ring all, to add circumference compression around described circulating application and to provide described support for described ring.

6. ion implantation device as claimed in claim 5, wherein, at least some in described spoke is tensioned, to provide axial stiffness between described wheel hub and described ring along with the described angled line of plane of taking turns.

7. ion implantation device as claimed in claim 5, wherein, each spoke has stretcher, and described stretcher is for regulating the length of described spoke between described wheel hub and described ring.

8. ion implantation device as claimed in claim 5, wherein, the described workpiece support workpiece be arranged as above it provides heat sink accordingly, and it is described heat sink to be used for cooling to carry cooling fluid between described wheel hub and described periphery ring that at least some wherein, in described spoke is tubulose.

9. for performing implanted ions process so that by implanted ions to the ion implantation device in multiple plane workpiece, described device comprises:

Vacuum chamber;

Ion beam maker in described vacuum chamber, it forms the ion beam for implanting during being arranged in described implantation process, described Shu Zhixiang implantation position; And

Workpiece support is taken turns, it is mounted for and rotates around axis in described vacuum chamber, described support wheel has the multiple workpiece support around described periphery location of taking turns, workpiece on described strutting piece is continuously passed through described implantation position along the circular scan path limited by described periphery of taking turns by the described rotation taken turns thus, described workpiece support wheel has the wheel hub being mounted for and rotating around described axis, the continuous periphery ring of described workpiece support is provided, and multiple spoke, described spoke be with described axis established law to wheel plane in the described ring be centrally placed on described wheel hub provide support, described spoke is tensioning between described wheel hub and described ring all, to add circumference compression around described circulating application and to provide described support for described ring,

Wherein, the described rotation of described workpiece support wheel can translationally be fixed;

Wherein, described workpiece support on described wheel is arranged to for supporting plane type workpiece, each workpiece all has the predetermined linear size in the plane of described workpiece, and when on described trade union college to described strutting piece, described predetermined linear size and described scanning pattern established law are to extension; And

Wherein, described ion beam maker is arranged to and roughly static described bundle is formed into described implantation position along fixing beam path, and be further adapted for make ion beam described in described implantation position place have with described scanning pattern established law to sectional dimension, described sectional dimension is at least 100mm and is enough to implanting ions above the gamut of the described predetermined linear size of the described workpiece on described strutting piece.

10. ion implantation device as claimed in claim 9, wherein, at least some in described spoke takes turns the angled line tensioning of plane along with described, thus provides axial stiffness between described wheel hub and described ring.

11. ion implantation devices as claimed in claim 9, wherein, each spoke has stretcher, and described stretcher is for regulating the length of described spoke between described wheel hub and described ring.

12. ion implantation devices as claimed in claim 9, wherein, at least some in described spoke is tubulose to carry cooling fluid between described wheel hub and described periphery ring.

13. 1 kinds of implanting ions, so that the method making the thin slice of semi-conducting material peel off from planar mono crystal workpiece, comprise the steps:

The bundle with the described ion of the beam electronic current being not less than 50mA is utilized to be implanted in the plane of described workpiece with the implantation energy being not less than 200keV by low quality uniform ion;

Wherein, at least 50 described trade union college are to the common radii place of the periphery of taking turns around workpiece support, and described workpiece support wheel is at least 50 times of the minimum widith of described plane workpiece at the girth of described peripheral region; And

Wherein, described workpiece support wheel rotates to transmit the described bundle of described workpiece by described ion in circular scan path continuously around a rotation, and described support wheel has the multiple workpiece support around described periphery location of taking turns;

Wherein, the described rotation of described workpiece support wheel can translationally be fixed;

Wherein, described workpiece support on described wheel is arranged to for supporting plane type workpiece, each workpiece all has the predetermined linear size in the plane of described workpiece, and when on described trade union college to described strutting piece, described predetermined linear size and described scanning pattern established law are to extension; And

Wherein, described ion beam maker is arranged to and roughly static described bundle is formed into described implantation position along fixing beam path, and be further adapted for make ion beam described in described implantation position place have with described scanning pattern established law to sectional dimension, described sectional dimension is at least 100mm and is enough to implanting ions above the gamut of the described predetermined linear size of the described workpiece on described strutting piece.

14. methods as claimed in claim 13, wherein, H ⁺ion is implanted.

15. methods as claimed in claim 13, wherein, during implanting with the power of at least 200W, described workpiece is all cooled.

16. methods as claimed in claim 13, wherein, described workpiece is installed in around continuous periphery ring, and described continuous loop to be supported on wheel hub and to form described workpiece support take turns to apply tension force by the spoke be connected with described wheel hub by described ring, thus generation circumference compression around described ring.

17. methods as claimed in claim 16, wherein, at least some in described spoke is tensioned, to provide axial stiffness between described wheel hub and described ring along the angled line of plane of described support wheel between described wheel hub and described ring.

18. methods as claimed in claim 16, wherein, at least some in described spoke be formed as pipe, and cooling fluid along described tubulose spoke through described wheel hub and described ring, for cool described workpiece.