CN102800621B - Method for forming embolism structure and semiconductor device - Google Patents
Method for forming embolism structure and semiconductor device Download PDFInfo
- Publication number
- CN102800621B CN102800621B CN201110136638.4A CN201110136638A CN102800621B CN 102800621 B CN102800621 B CN 102800621B CN 201110136638 A CN201110136638 A CN 201110136638A CN 102800621 B CN102800621 B CN 102800621B
- Authority
- CN
- China
- Prior art keywords
- embolism
- conductive layer
- hole
- layer
- medium layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a method for forming an embolism structure and a semiconductor device. The method for forming the embolism structure comprises the following steps of: providing a substrate; forming a first dielectric layer with a first embolism in the substrate; forming a second dielectric layer with a through hole in the surface consisting of the first dielectric layer and the first embolism, wherein the first embolism is exposed from the bottom of the through hole; forming a first conductive layer of which the surface is higher than the top surface of the first embolism in the through hole by an electroless plating method; and forming a second conductive layer in the through hole to cover the first conductive layer, wherein the surface of the second conductive layer is flush with the surface of the second dielectric layer, the first conductive layer and the second conductive layer form a second embolism, and the embolism structure comprises the first embolism and the second embolism. Due to the adoption of the technical scheme, the contact resistance between the first embolism and the second embolism can be reduced.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the method that forms embolism structure, semiconductor device.
Background technology
In semiconductor technology, utilize interconnection structure interface unit structure, the interconnection structure wherein forming can be that embolism is connected with embolism, can be also that embolism is connected with interconnection line.
The method that forms embolism and stud interconnect in prior art is:
With reference to figure 1, semiconductor base 10 is provided, at the interior formation first medium of this semiconductor base 10 layer 11, in first medium layer 11, be formed with the first embolism 12.With reference to figure 2, on the surface of first medium layer 11 and the first embolism 12, form second medium layer 13, on described second medium layer 13, form patterned photoresist layer (not shown), define the position of through hole, taking patterned photoresist layer as second medium layer 13 described in mask etching, in described second medium layer 13, form through hole 14.Afterwards, with reference to figure 3, utilize physical vapour deposition (PVD) or electro-plating method to form the second embolism 15 at the interior filled conductive material of through hole 14.
Along with the development of semiconductor technology, the integrated level of integrated circuit is more and more higher, and the characteristic size (CD) of device is more and more less, and while being therefore easy to occur that photoetching, etching form through hole 14, the position of the position of through hole 14 and the first embolism 12 misplaces.Because the position of through hole 14 misplaces, while utilizing physical vapour deposition (PVD) or electro-plating method filled conductive material to form the second embolism 15, the real contact area of the second embolism 15 and the first embolism 12 reduces, contact resistance between such the first embolism 12 and the second embolism 15 increases, and can cause like this power consumption of semiconductor device large.
In prior art, there is the method for many formation embolisms, China's application that for example application number of application on August 2nd, 2009 is 200910194781.1, disclosed " manufacture method of tungsten plug ", but all do not solve above-described technical problem.
Summary of the invention
The problem that the present invention solves be in prior art because device feature size is more and more less, cause the dislocation of interconnective embolism, the contact resistance between interconnective two embolisms is increased.
For addressing the above problem, the invention provides a kind of method that forms embolism structure, comprising:
Substrate is provided, in described substrate, forms the first medium layer with the first embolism;
On the surface of described first medium layer and the first embolism composition, form the second medium layer with through hole, described via bottoms exposes described the first embolism;
Utilize electroless plating method in described through hole, to form surperficial the first conductive layer that exceeds the first embolism end face;
In described through hole, form the second conductive layer, cover described the first conductive layer, and the surface of described the second conductive layer is equal with the surface of described second medium layer, described the first conductive layer and the second conductive layer form the second embolism, and described embolism structure comprises described the first embolism and the second embolism.
Optionally, the material of described the first conductive layer is cobalt tungsten phosphorus or cobalt molybdenum phosphorus.
Optionally, the material of described the second conductive layer is selected from copper or tungsten.
Optionally, the method for formation the second conductive layer is physical vapour deposition (PVD) or plating.
Optionally, in described through hole, form the second conductive layer, cover described the first conductive layer, and equal the comprising of surface of the surface of described the second conductive layer and described second medium layer:
Form after the first conductive layer, fill up the second conductive layer in described through hole, described the second conductive layer exceeds described through hole;
The second conductive layer described in planarization, removes the second conductive layer that exceeds described through hole, makes the surface of described the second conductive layer equal with the surface of described second medium layer.
Optionally, on described semiconductor base, forming the method for second medium layer with through hole is:
On described semiconductor base, form second medium layer;
On described second medium layer, form photoresist layer;
Exposure, the described photoresist layer that develops, form patterned photoresist layer, defines the position of through hole;
Form through hole taking described patterned photoresist layer as second medium layer described in mask etching.
Optionally, the material of described first medium layer, second medium layer is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, super low-k materials one of them or they.
Optionally, described low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.
Optionally, described super low-k materials is black diamond.
The present invention also provides a kind of method that forms semiconductor device, comprising: with above-described method formation embolism structure.
Compared with prior art, the present invention has the following advantages:
The technical program utilize electroless plating method no matter the shape of object how all can form on the surface of object the characteristic of uniform thin layer, in via bottoms, form the first conductive layer.In prior art, location dislocation between the first embolism and through hole, therefore in the time that etching second medium layer forms through hole, the first medium layer under the wrong bit position of through hole has also been carried out to etching, the surface that through hole is exposed comprises the part and the sidewall sections that expose the first embolism end face.Therefore, can be formed on the first conductive layer that electroless plating method forms on all surface of the first embolism that via bottoms exposes, expose summit portion and the sidewall sections of described the first embolism, make the contact area of the first embolism and the second embolism increase the contact portion of sidewall, expand the contact area of the second embolism and the first embolism, reduce the contact resistance of the first embolism and the second embolism, overcome the contact resistance large problem that upper surface that electric conducting material in prior art is substantially only formed on the first embolism causes the first embolism and the second embolism.
Brief description of the drawings
Fig. 1～3rd, the cross-sectional view of the formation embolism of prior art and the method for stud interconnect;
Fig. 4 is the schematic flow sheet of the method for the formation embolism structure of the specific embodiment of the invention;
Fig. 5～Fig. 8 is the cross-sectional view of the embolism structure method of the formation of the specific embodiment of the invention.
Embodiment
Increase for improving the contact resistance of embolism and embolism in prior art the large problem of power consumption that makes device, inventor is through conscientious research, with reference to figure 2, while finding that etching forms through hole 14, because the position of through hole 14 misplaces, therefore when etching forms through hole 14, the first medium layer 11 that through hole 14 is staggered below the first embolism 12 positions has carried out etching, in the formation of embolism 12 sides opening 16, the bottom of through hole 14 is exactly irregular like this, it comprises two parts, be respectively the part and the part that exposes the first embolism 12 sidewalls that expose the first embolism 12 end faces, in the time that the interior filled conductive material of through hole 14 forms the second embolism 15, in prior art, electric conducting material is basic only contacts with the part of the first embolism 12 end faces, part that can not filling opening 16, if can adopt additive method to make the also filled conductive material of part of opening 16, the first embolism 12 will increase with the area that the second embolism 15 contacts so, therefore both contact resistances also can reduce.
The technical program utilize electroless plating method no matter the shape of object how all can form on the surface of object the characteristic of uniform thin layer, in via bottoms, form the first conductive layer.In prior art, location dislocation between the first embolism and through hole, therefore in the time that etching second medium layer forms through hole, the second medium layer under the wrong bit position of through hole has also been carried out to etching, the surface that through hole is exposed comprises the part and the sidewall sections that expose the first embolism end face.Therefore, can be formed on the first conductive layer that electroless plating method forms on all surface of the first embolism that via bottoms exposes, expose summit portion and the sidewall sections of described the first embolism, make the contact area of the first embolism and the second embolism increase the contact portion of sidewall, expand the contact area of the second embolism and the first embolism, reduce the contact resistance of the first embolism and the second embolism, overcome the contact resistance large problem that upper surface that electric conducting material in prior art is substantially only formed on the first embolism causes the first embolism and the second embolism.
Fig. 4 is the flow chart of the method for the formation embolism structure of the specific embodiment of the invention, and with reference to figure 4, the method for the formation embolism structure of the specific embodiment of the invention comprises:
Step S41, provides substrate, is formed with the first medium layer with the first embolism in described substrate;
Step S42 forms the second medium layer with through hole on the surface of described first medium layer and the first embolism composition, and described via bottoms exposes described the first embolism;
Step S43, utilizes electroless plating method in described through hole, to form surperficial the first conductive layer that exceeds the first embolism end face;
Step S44, in described through hole, form the second conductive layer, cover described the first conductive layer, and the surface of described the second conductive layer is equal with the surface of described second medium layer, described the first conductive layer and the second conductive layer form the second embolism, and described embolism structure comprises described the first embolism and the second embolism.
Fig. 5～Fig. 8 is the cross-sectional view of the embolism structure method of the formation of the specific embodiment of the invention, in conjunction with the method that describes the formation embolism structure of the specific embodiment of the invention with reference to figure 4 and Fig. 5～Fig. 8 in detail.
In conjunction with reference to figure 4 and Fig. 5, perform step S41, substrate 50 is provided, in described substrate 50, be formed with the first medium layer 51 with the first embolism 52.In the specific embodiment of the invention, substrate 50 can complete the substrate providing afterwards by semiconductor FEOL (FEOL); Also can be, after semiconductor FEOL (FEOL) completes, to proceed the substrate providing in semiconductor rear section technique (BEOL) process.The material of substrate 50 can be monocrystalline silicon or single-crystal silicon Germanium, or monocrystalline carbon doped silicon; Or can also comprise other material, the III-V compounds of group such as such as GaAs.In described semiconductor base 50, be formed with device architecture, this device architecture can be the device architecture forming in semiconductor FEOL, for example MOS transistor, can be also the device architecture forming in last part technology (FEOL), for example, comprise the interconnection structure of embolism and interconnection line.Wherein the first embolism 52 is used for connecting the device architecture forming in semiconductor base 50.The material of first medium layer 51 is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, super low-k materials one of them or they.Low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.Super low-k materials can be black diamond, the other materials that also can be known to the skilled person.
In conjunction with reference to figure 4 and Fig. 6, execution step S42, forms the second medium layer 53 with through hole 54 on the surface forming at described first medium layer 51 and the first embolism 52.In described substrate, forming the method for second medium layer with through hole is: on the surface forming at described first medium layer 51 and the first embolism 52, form second medium layer 53; On described second medium layer 53, form photoresist layer (not shown); Exposure, the described photoresist layer that develops form patterned photoresist layer, define the position of through hole; Form through hole 54 taking patterned photoresist layer as second medium layer 53 described in mask etching.The material of described second medium layer 53 is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, super low-k materials one of them or they.Described low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.Described super low-k materials is black diamond.Described in etching, the method for second medium layer 53 is dry etching.
Along with the development of semiconductor technology, the integrated level of integrated circuit is more and more higher, the characteristic size (CD) of device is more and more less, therefore while utilizing photoetching, etching to form through hole 54, the position of the position of through hole 54 and the first embolism 52 misplaces, be that through hole 54 offsets to one side, cause through hole 54 and the first embolism 52 not to aim at.Because the position of through hole 53 misplaces, therefore when etching forms through hole 54, the first medium layer 51 that through hole 54 is staggered below the position of the first embolism 52 has carried out etching, in the formation of the first embolism 52 sides opening 56, the bottom of through hole 54 is exactly irregular like this, it comprises two parts, is respectively the part and the part that exposes the first embolism 52 sidewalls that expose the first embolism 52 end faces, and described through hole 54 bottom-exposed go out end face and the partial sidewall of described the first embolism 52.
In conjunction with reference to figure 4 and Fig. 7, perform step S43, utilize electroless plating method to exceed the first conductive layer 55 of the first embolism 52 end faces on the interior formation of described through hole 54 surface.The plating that does not need to pass into electric current but realize based on reduction is chemically commonly referred to electroless plating.Electroless plating has following characteristics: 1, unlike metallide, need supply power, and no matter plating piece why shape all can obtain uniform film; 2, can obtain by adjusting plating condition the film that meets instructions for use.Based on the feature of electroless plating method, the present invention utilizes electroless plating method to form the first conductive layer 55, and this first conductive layer 55 covers end face and the partial sidewall of the first embolism 52 that described through hole 54 bottom-exposed go out; And described the first conductive layer 55 fills up described opening 56, makes the surface of the first conductive layer 55 exceed the upper surface of the first embolism 52.In the specific embodiment of the invention, the material of described the first conductive layer 55 is cobalt tungsten phosphorus or cobalt molybdenum phosphorus.Certainly, in the present invention, the material of the first conductive layer 55 is not limited to cobalt tungsten phosphorus or cobalt molybdenum phosphorus, can be also other materials that can form with electroless plating method.Wherein, the surface of the first embolism 52 comprises two parts, is respectively end face and side, and the bottom surface of the first embolism 52 is the surface contacting with substrate 50, and end face is the surface relative with bottom surface, and side is the surface that opening 56 exposes.
The surface of the first conductive layer 55 should exceed the end face of the first embolism 52, so just can ensure that, in the time of follow-up formation the second conductive layer, the second conductive layer can fully contact with the first conductive layer 55.
In conjunction with reference to figure 4 and Fig. 8, execution step S44, at interior formation the second conductive layer 57 of described through hole 53, cover described the first conductive layer 55, and the surface of described the second conductive layer 57 is equal with the surface of described second medium layer 53, described the first conductive layer 55 and the second conductive layer 57 form the second embolism, and described embolism structure comprises described the first embolism 52 and the second embolism.Because the first embolism 52 and the second embolism carry out conducting by being in contact with one another between the two, therefore the first conductive layer 55 is formed on end face and the partial sidewall that described the first embolism 52 exposes, expand the contact area of the second embolism and the first embolism 52, reduce the contact resistance of the first embolism 52 and the second embolism, overcome the large problem of contact resistance that upper surface that electric conducting material in prior art is substantially only formed on the first embolism 52 causes the first embolism 52 and the second embolism.
It should be noted that, " equal " in the present invention and do not mean that the surface of the second conductive layer 57 and the surface of second medium layer 53 completely equal, but allow equal within the scope of certain error.
In the specific embodiment of the invention, the material of the second conductive layer 57 is selected from copper or tungsten.The method that forms the second conductive layer 57 is physical vapour deposition (PVD) or plating, at interior formation the second conductive layer 57 of described through hole 54, cover described the first conductive layer 55, and equal the comprising of surface of the surface of described the second conductive layer 57 and described second medium layer 53: form after the first conductive layer 55, in described through hole 54, fill up the second conductive layer 57, described the second conductive layer 57 exceeds described through hole 54; The second conductive layer 57 described in planarization, removes the second conductive layer 57 that exceeds described through hole 54, makes the surface of described the second conductive layer 57 equal with the surface of described second medium layer 53.
After forming above-described embolism structure, can on second medium layer 53, continue to form the device of other structures, or continue to form embolism structure.
Based on the method for above-described formation embolism structure, the present invention also provides a kind of method that forms semiconductor device, and the method comprises: with above-described method formation embolism structure.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible variation and amendment to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection range of technical solution of the present invention.
Claims (9)
1. a method that forms embolism structure, is characterized in that, comprising:
Substrate is provided, in described substrate, is formed with the first medium layer with the first embolism;
On the surface of described first medium layer and the first embolism composition, form the second medium layer with through hole, described via bottoms exposes described the first embolism, described through hole and described the first embolism dislocation, forming in via process, the first medium layer that through hole staggers below the position of the first embolism has formed opening;
In described through hole, form the second embolism, the formation method of described the second embolism comprises:
Utilize electroless plating method in described through hole and opening, to form surperficial the first conductive layer that exceeds the first embolism end face, described the first conductive layer segment thickness that exceeds the first embolism end face is even;
Utilize physical vapour deposition (PVD) or electroplate in described through hole, to form the second conductive layer, cover described the first conductive layer, and the surface of described the second conductive layer is equal with the surface of described second medium layer, described the first conductive layer and the second conductive layer form the second embolism;
Described embolism structure comprises described the first embolism and the second embolism.
2. the method for formation embolism structure as claimed in claim 1, is characterized in that, the material of described the first conductive layer is cobalt tungsten phosphorus or cobalt molybdenum phosphorus.
3. the method for formation embolism structure as claimed in claim 1, is characterized in that, the material of described the second conductive layer is selected from copper or tungsten.
4. the method for formation embolism structure as claimed in claim 1, is characterized in that, forms the second conductive layer in described through hole, covers described the first conductive layer, and equal the comprising of surface of the surface of described the second conductive layer and described second medium layer:
Form after the first conductive layer, fill up the second conductive layer in described through hole, described the second conductive layer exceeds described through hole;
The second conductive layer described in planarization, removes the second conductive layer that exceeds described through hole, makes the surface of described the second conductive layer equal with the surface of described second medium layer.
5. the method for formation embolism structure as claimed in claim 1, is characterized in that, the method that forms the second medium layer with through hole on the surface of described first medium layer and the first embolism composition is:
On the surface of described first medium layer and the first embolism composition, form second medium layer;
On described second medium layer, form photoresist layer;
Exposure, the described photoresist layer that develops, form patterned photoresist layer, defines the position of through hole;
Form through hole taking described patterned photoresist layer as second medium layer described in mask etching.
6. the method for formation embolism structure as claimed in claim 5, is characterized in that, the material of described first medium layer, second medium layer is selected from the combination in any of silicon nitride, carbon dope nitrogen, low-k materials, super low-k materials one of them or they.
7. the method for formation embolism structure as claimed in claim 6, is characterized in that, described low-k materials is selected from SiO
2, SiOF, SiCOH, SiO, SiCO, SiCON one of them or they combination in any.
8. the method for formation embolism structure as claimed in claim 6, is characterized in that, described super low-k materials is black diamond.
9. a method that forms semiconductor device, is characterized in that, comprising: with the method formation embolism structure described in claim 1～8 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110136638.4A CN102800621B (en) | 2011-05-25 | 2011-05-25 | Method for forming embolism structure and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110136638.4A CN102800621B (en) | 2011-05-25 | 2011-05-25 | Method for forming embolism structure and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102800621A CN102800621A (en) | 2012-11-28 |
| CN102800621B true CN102800621B (en) | 2014-07-30 |
Family
ID=47199689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110136638.4A Active CN102800621B (en) | 2011-05-25 | 2011-05-25 | Method for forming embolism structure and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102800621B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609431B (en) * | 2014-10-28 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1901202A (en) * | 2005-07-20 | 2007-01-24 | 台湾积体电路制造股份有限公司 | Semiconductor element and forming method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4644926B2 (en) * | 2000-10-13 | 2011-03-09 | ソニー株式会社 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| TW200734482A (en) * | 2005-03-18 | 2007-09-16 | Applied Materials Inc | Electroless deposition process on a contact containing silicon or silicide |
-
2011
- 2011-05-25 CN CN201110136638.4A patent/CN102800621B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1901202A (en) * | 2005-07-20 | 2007-01-24 | 台湾积体电路制造股份有限公司 | Semiconductor element and forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102800621A (en) | 2012-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11348832B2 (en) | Self-aligned via interconnect structures | |
| CN102832165B (en) | The improved gap filling method for dual-damascene technics | |
| US9331171B2 (en) | Manufacturing method for forming semiconductor structure | |
| US10510655B2 (en) | Semiconductor devices employing a barrier layer | |
| US9343659B1 (en) | Embedded magnetoresistive random access memory (MRAM) integration with top contacts | |
| CN108461477B (en) | Metal interconnect for ultra (skip) via integration | |
| US20140167268A1 (en) | Graphene and metal interconnects | |
| US9576894B2 (en) | Integrated circuits including organic interlayer dielectric layers and methods for fabricating the same | |
| US9059166B2 (en) | Interconnect with hybrid metallization | |
| US20170256449A1 (en) | Methods of forming conductive structures with different material compositions in a metallization layer | |
| US9141749B2 (en) | Interconnect structures and methods for back end of the line integration | |
| US8492270B2 (en) | Structure for nano-scale metallization and method for fabricating same | |
| KR20160044012A (en) | Semiconductor constructions and methods of forming electrically conductive contacts | |
| US11929258B2 (en) | Via connection to a partially filled trench | |
| TWI545694B (en) | Integrated circuit device having a copper interconnect | |
| CN113299600A (en) | Method for forming metal interconnection | |
| CN104701143A (en) | Bi-layer hard mask for robust metallization profile | |
| CN105990216A (en) | Formation method of interconnection structure | |
| CN102800621B (en) | Method for forming embolism structure and semiconductor device | |
| US20090302477A1 (en) | Integrated circuit with embedded contacts | |
| CN102738117A (en) | Interconnect structure and method of forming the same | |
| CN103094197B (en) | Interconnection structure manufacture method | |
| US20130224949A1 (en) | Fabrication method for improving surface planarity after tungsten chemical mechanical polishing | |
| CN210984722U (en) | Semiconductor structure | |
| TW202230530A (en) | Semiconductor structure and method of forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |