CN102784923B - Indium powder manufacturing system - Google Patents
Indium powder manufacturing system Download PDFInfo
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- CN102784923B CN102784923B CN201210323086.2A CN201210323086A CN102784923B CN 102784923 B CN102784923 B CN 102784923B CN 201210323086 A CN201210323086 A CN 201210323086A CN 102784923 B CN102784923 B CN 102784923B
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Abstract
The invention relates to an indium powder manufacturing system which comprises a melting tank for liquefied indium raw material, wherein a flow guiding pipe for guiding the liquid indium is arranged at one side of the lower part of the melting tank and is communicated with a spraying chamber which is horizontally arranged; a nozzle stretching into an atomizing chamber is arranged at the right end of the injecting chamber; a sieving mesh is arranged at the bottom of the atomizing chamber, and a dust collector is connected at the lower part of the sieving mesh; the indium powder manufacturing system is provided with a gas supplying chamber, wherein gas in the gas supplying chamber is conveyed to the injecting chamber through a compressor; gas mixed with the liquid indium in the injecting chamber is sprayed into the atomizing chamber through the nozzle; and the gas in the atomizing chamber flows into the dust collector, and then is exhausted through an exhaust fan. According to the indium powder manufacturing system, the gas-liquid mixture is injected into the atomizing chamber through the nozzle, so that the liquid indium can be uniformly atomized into relatively small powder indium particles, and the metal indium can prevent from being distilled by using a high-temperature resisting material; the indium powder manufacturing system not only can achieve uniform refining, has relatively high yield, but also has simple structure and relatively low cost of production.
Description
Technical field
The present invention relates to the preparation system of indium powder.
Background technology
Thin indium powder is a kind of important industrial raw materials, and mainly for the preparation of TTO target and electronic product etc., its application prospect is very wide.Along with indium powder demand industrially increases, the producing equipment, system etc. of thin indium powder obtain development to a certain degree.At present, produce thin indium powder and generally adopt electrolysis and the way of distillation.The indium powder output capacity making release mesh due to electrolysis is lower, and a large amount of hand labours will be spent the spongiform sediment grinds of indium, and not only production cost is high, efficiency is low, and hinders plant-scale trial-production of indium powder; And the way of distillation indium metal is heated to more than 2000 DEG C, the indium steam volatilized obtains indium powder through condensation, although the indium Powder Particle Size produced is even, equipment used needs to adopt high temperature resistant material, expensive.
Summary of the invention
For above-mentioned technical problem, the invention provides the indium powder preparation system that a kind of structure is comparatively simple, cost is lower, yield rate is higher.
The technical scheme that the present invention solves the problems of the technologies described above employing is: a kind of indium powder preparation system, comprise the fusion pool of liquefaction indium metal raw material, this side, fusion pool bottom is provided with the mozzle of deriving liquid indium, this mozzle is communicated with a horizontally disposed spray chamber, this spray chamber right-hand member is provided with nozzle, nozzle stretches into a spray chamber, is provided with a screen cloth bottom spray chamber, and screen cloth bottom is connected with dust-precipitator; Be provided with gas supply room, gas in supply room is delivered to described spray chamber by compressor, and in spray chamber, gas sprays into spray chamber by nozzle after mixing with liquid indium, gas in spray chamber enters described dust-precipitator, and the gas in dust-precipitator is discharged by exhaust blower.
Further, the air inlet of described exhaust blower is communicated with described dust-precipitator, air outlet is communicated with described supply room.
Further, the heater of motlten metal indium is provided with bottom described fusion pool.
Further, the gas in described supply room is inert gas.
Further, described heater is to described mozzle heat supply.
Further, described heater is to described spray chamber heat supply.
Further, described supply room is communicated with described melter.
As can be known from the above technical solutions, the present invention utilizes nozzle that gas-liquid mixture is sprayed into spray chamber, liquid indium uniform-mist is made to change into less indium powder particles, thus avoid using exotic material indium metal to be distilled, not only refinement is even, yield rate is higher, and structure is simple, production cost is lower; Meanwhile, gas can recycle by the present invention, reduce further production cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Detailed description of the invention
Below in conjunction with Fig. 1, the present invention is described in further detail:
This indium powder preparation system comprises the fusion pool 1 of liquefaction indium metal raw material, this side, fusion pool bottom is provided with the mozzle 2 of deriving liquid indium, this mozzle is communicated with a horizontally disposed spray chamber 3, this spray chamber right-hand member is provided with nozzle 4, nozzle stretches into a spray chamber 5, and be provided with a screen cloth 6 bottom spray chamber, screen cloth bottom is connected with dust-precipitator 7, indium powder particles below screen cloth is collected by dust-precipitator, and indium powder particles on screen cloth is recyclable re-starts refinement to fusion pool.The present invention without the need to indium metal is heated to more than 2000 DEG C, can becomes indium steam, and only fusion pool need be heated to more than the fusing point of indium.In real process, it is optimum temperature that the temperature of fusion pool generally maintains about 250 DEG C, and such temperature reduces surface tension and the viscosity of liquid indium effectively simultaneously, is conducive to spraying liquid indium.Therefore, the present invention can avoid using exotic material, and not only structure is comparatively simple, and can reduce production cost.
The present invention is provided with gas supply room 8, gas in supply room is delivered to described spray chamber by compressor 9, and in spray chamber, gas sprays into spray chamber by nozzle after mixing with liquid indium, gas in spray chamber enters described dust-precipitator, and the gas in dust-precipitator is discharged by exhaust blower 10; As preferred embodiment, the air inlet of described exhaust blower is communicated with described dust-precipitator, air outlet is communicated with described supply room, thus the gas backstreaming making to enter in spray chamber is to supply room, recycles, reduce production cost further to gas.In implementation process, gas enters spray chamber direction and preferably keeps certain angle with the flow direction of liquid indium, and the size of angle is generally 60 °-90 °, is broken up by liquid indium, can fully mix when such gas enters spray chamber; Meanwhile, such angle is little to the flow rate effect of gas-liquid mixture, therefore, is ensureing the basis of productivity ratio, can by abundant for liquid indium refinement.In the present invention, the pressure of gas is relevant with the granularity of refinement indium powder, and when having the same terms, improve the pressure of gas, can reduce the granularity of indium powder refinement, the gas pressure of native system generally adopts 0.8MPa-1.5 MPa.Experiment shows, when gas pressure brings up to 1.44MPa by 0.83MPa, the output capacity of the indium powder of-0.045mm granularity brings up to 97.5% by 46.2%.In implementation process, the selection of nozzle is also most important, should according to the diameter needing choose reasonable nozzle producing indium Powder Particle Size.
In systems in which, the heater 11 of motlten metal indium is provided with bottom described fusion pool, the temperature of fusion pool can be maintained 250 DEG C by this heater, simultaneously, described heater is to described mozzle and spray chamber heat supply respectively, prevent the temperature of mozzle and spray chamber from declining, the surface tension of liquid indium and viscosity are increased, is unfavorable for abundant atomization.Gas in supply room of the present invention adopts inert gas, and described supply room is communicated with described melter, makes to be full of inert gas in melter, and indium can be prevented oxidized.
Above-mentioned embodiment is used for illustrative purposes only, and be not limitation of the present invention, the those of ordinary skill of relevant technical field, without departing from the spirit and scope of the present invention, can also make various change and modification, therefore all equivalent technical schemes also should belong to category of the present invention.
Claims (4)
1. an indium powder preparation system, it is characterized in that: the fusion pool comprising liquefaction indium metal raw material, this side, fusion pool bottom is provided with the mozzle of deriving liquid indium, this mozzle is communicated with a horizontally disposed spray chamber, this spray chamber right-hand member is provided with nozzle, nozzle stretches into a spray chamber, is provided with a screen cloth bottom spray chamber, and screen cloth bottom is connected with dust-precipitator; Be provided with gas supply room, gas in supply room is delivered to described spray chamber by compressor, the flow direction that gas enters spray chamber direction and liquid indium keeps the angle of 60 °, in spray chamber, gas sprays into spray chamber by nozzle after mixing with liquid indium, gas in spray chamber enters described dust-precipitator, and the gas in dust-precipitator is discharged by exhaust blower; The heater of motlten metal indium is provided with bottom described fusion pool; Described heater is to described mozzle heat supply; Described heater is to described spray chamber heat supply.
2. a kind of indium powder preparation system according to claim 1, is characterized in that: the air inlet of described exhaust blower is communicated with described dust-precipitator, air outlet is communicated with described supply room.
3. a kind of indium powder preparation system according to claim 1 and 2, is characterized in that: the gas in described supply room is inert gas.
4. a kind of indium powder preparation system according to claim 3, is characterized in that: described supply room is communicated with described melter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210323086.2A CN102784923B (en) | 2012-09-04 | 2012-09-04 | Indium powder manufacturing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210323086.2A CN102784923B (en) | 2012-09-04 | 2012-09-04 | Indium powder manufacturing system |
Publications (2)
| Publication Number | Publication Date |
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| CN102784923A CN102784923A (en) | 2012-11-21 |
| CN102784923B true CN102784923B (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210323086.2A Active CN102784923B (en) | 2012-09-04 | 2012-09-04 | Indium powder manufacturing system |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103990810A (en) * | 2014-05-30 | 2014-08-20 | 洛阳理工学院 | Technology for preparing nanometer indium powder |
| CN113830999A (en) * | 2021-09-29 | 2021-12-24 | 苏州大学 | Device and method for synthesizing spherical quartz powder |
| CN114457239B (en) * | 2022-03-11 | 2024-02-06 | 合肥江丰电子材料有限公司 | Method for purifying indium slag |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61266506A (en) * | 1985-05-20 | 1986-11-26 | Kobe Steel Ltd | Production of pulverous metallic powder |
| EP0544068A2 (en) * | 1991-10-01 | 1993-06-02 | Messer Griesheim Gmbh | Process and apparatus for obtaining powders |
| CN2285176Y (en) * | 1996-11-29 | 1998-07-01 | 中国科学院金属研究所 | Ultrasonic gas-atomizin g powder-making equipment |
| CN1911570A (en) * | 2006-08-18 | 2007-02-14 | 陕西科技大学 | Device for preparing metal ultrafine powder and its method |
| CN202741742U (en) * | 2012-09-04 | 2013-02-20 | 柳州百韧特先进材料有限公司 | Indium powder preparation system |
-
2012
- 2012-09-04 CN CN201210323086.2A patent/CN102784923B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61266506A (en) * | 1985-05-20 | 1986-11-26 | Kobe Steel Ltd | Production of pulverous metallic powder |
| EP0544068A2 (en) * | 1991-10-01 | 1993-06-02 | Messer Griesheim Gmbh | Process and apparatus for obtaining powders |
| CN2285176Y (en) * | 1996-11-29 | 1998-07-01 | 中国科学院金属研究所 | Ultrasonic gas-atomizin g powder-making equipment |
| CN1911570A (en) * | 2006-08-18 | 2007-02-14 | 陕西科技大学 | Device for preparing metal ultrafine powder and its method |
| CN202741742U (en) * | 2012-09-04 | 2013-02-20 | 柳州百韧特先进材料有限公司 | Indium powder preparation system |
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| Publication number | Publication date |
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| CN102784923A (en) | 2012-11-21 |
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Effective date of registration: 20200316 Address after: 547000 No.71, Chengxi Road, Hechi City, Guangxi Zhuang Autonomous Region Patentee after: GUANGXI HUAXI GROUP Co.,Ltd. Address before: 545006, the Guangxi Zhuang Autonomous Region, Liuzhou hi tech Road No. 15 standard workshop D seat, fifth floors East Patentee before: LIUZHOU BAIRENTE ADVANCED MATERIALS Co.,Ltd. |
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