CN102778973A - Double-layer ITO (indium tin oxide) wiring structure - Google Patents
Double-layer ITO (indium tin oxide) wiring structure Download PDFInfo
- Publication number
- CN102778973A CN102778973A CN2012102208132A CN201210220813A CN102778973A CN 102778973 A CN102778973 A CN 102778973A CN 2012102208132 A CN2012102208132 A CN 2012102208132A CN 201210220813 A CN201210220813 A CN 201210220813A CN 102778973 A CN102778973 A CN 102778973A
- Authority
- CN
- China
- Prior art keywords
- double
- ito
- wire structures
- electrode
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a double-layer ITO (indium tin oxide) wiring structure. Each layer of ITO is provided with multiple lines or rows of touch electrodes, each line or row of touch electrodes is formed by connecting a plurality of same diamond electrodes, and the across corners of the diamond electrodes are respectively inwards sagged along the diagonal direction to form two gaps. In the above mode, according to the double-layer ITO wiring structure disclosed by the invention, the problem of low detection sensitivity of the traditional capacitance-type touch control structure can be improved, and the sensitivity and the linearity of the ITO layer are obviously improved.
Description
Technical field
The present invention relates to the wire structures of ITO, particularly relate to the wire structures of a kind of double-deck ITO.
Background technology
So-called ITO (indium tin oxide) is a kind of critical material that is used to produce LCD, and at present, it has all had in fields such as instrument and meter, computing machine, electronic watch, game machine and household electrical appliance very widely uses.The capacitive touch screen of big heat also is to utilize ITO to accomplish the action that detecting touches on the market in recent years; And the wiring of ITO generally is double-deck on the capacitance touch screen; Its cardinal principle is: utilize people's bulk electric field; When the user touched, the mutual capacitance (also claiming coupling capacitance) of the infall sensing unit of surface row or row can change, and finally can detect the particular location of touch point according to above-mentioned variation.
The structure of common double-deck ITO is a diamond structure; Its double-deck ITO is laid in respectively on the ipsilateral of glass substrate; For fear of the mutual conducting between the electrode,, so just can double-deck ITO be laid on the same side of glass substrate so bridge contact need be set on glass substrate.Though said method has been realized the action that detecting touches; But owing to adopt diamond structure; Can bring unavoidably and refer to that touch detection is unstable, power supply noise disturbs problem big, the setting-out poor effect more; Therefore need badly and improve, for users provide a kind of induction more the wire structures of sensitive ITO solve above problem.
Summary of the invention
The technical matters that the present invention mainly solves provides the wire structures of a kind of double-deck ITO, can improve the not high problem of conventional condenser touch-control structure detecting sensitivity, and the linearity is higher.
For solving the problems of the technologies described above; The technical scheme that the present invention adopts is: the wire structures that a kind of double-deck ITO is provided; Said every layer of ITO is provided with several rows and some row touch-control electrodes; Every row or every row touch-control electrode are connected to form by several same rhombus electrode, and the diagonal of said rhombus electrode caves inward respectively and forms two spaces.
The invention has the beneficial effects as follows: the present invention is simple in structure, can improve the not high problem of conventional condenser touch-control structure detecting sensitivity, has obviously improved the sensitivity and the linearity of ITO layer.
Description of drawings
Fig. 1 is the structural representation of wire structures one preferred embodiment of the double-deck ITO of the present invention;
Fig. 2 be shown in the structural representation of rhombus electrode;
The mark of each parts is following in the accompanying drawing: 1, ITO layer, 10, the touch-control electrode, 101, the rhombus electrode, 102, the space.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is set forth in detail, thereby protection scope of the present invention is made more explicit defining so that advantage of the present invention and characteristic can be easier to it will be appreciated by those skilled in the art that.
See also Fig. 1 and Fig. 2, the embodiment of the invention comprises:
The wire structures of a kind of double-deck ITO, said every layer of ITO are provided with several rows and some row touch-control electrodes 10, and every row and every row touch-control electrode 10 intersect alternately each other, have certain gap between the said touch-control electrode 10.Said every row or every row touch-control electrode 10 are connected to form by several same rhombus electrode 101; The diagonal of said rhombus electrode 101 caves inward respectively and forms two spaces 102, and the said every row on every layer of ITO and every row touch-control electrode 10 structure that is centrosymmetric is arranged.
Interconnect with the strip electrode between the rhombus electrode 101 in said every row or the every row touch-control electrode 10; Infall at said every row and every row touch-control electrode; Said rhombus electrode 101 interconnects with the mode of bridge joint, keeps electric insulation between promptly every capable touch-control electrode 10 and the every row touch-control electrode 10.
Following mask body place of matchmakers states the structure of rhombus electrode 101; See also Fig. 2; The a pair of diagonal angle of said rhombus electrode 101 caves inward along diagonal and forms two spaces 102; Said space 102 is rectangle, and its width is identical with the protective layer thickness of this touch-screen, and the width of the connecting portion between the distance between two spaces 102 and the said rhombus electrode 101 is identical.The top in said space 102 can be linear pattern, arc or shape such as trapezoidal, decides according to the different demands of design technology, and is not limited to shape as shown in Figure 2.The direction that said rhombus electrode 101 caves inward is vertical each other with the direction that adjacent two rhombus electrodes 101 link to each other.Compare with the diamond structure of traditional touch-control electrode 10, the structure of said rhombus electrode 101 effectively reduces the load capacitance of touch-control electrode 10, has reduced discharging and recharging the time of touch-control electrode 10, and then has improved the detecting sensitivity and the linearity of ITO layer 1.
The above is merely embodiments of the invention; Be not so limit claim of the present invention; Every equivalent structure or equivalent flow process conversion that utilizes instructions of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (8)
1. the wire structures of a double-deck ITO; Said every layer of ITO is provided with several rows and some row touch-control electrodes; It is characterized in that; Every row or every row touch-control electrode are connected to form by several same rhombus electrode, and the diagonal angle of said rhombus electrode caves inward respectively along diagonal and forms two spaces.
2. the wire structures of double-deck ITO according to claim 1 is characterized in that, every capable touch-control electrode intersects alternately with every row touch-control electrode each other.
3. the wire structures of double-deck ITO according to claim 1 and 2 is characterized in that, said several rows and arranging of some row touch-control electrodes on every layer of ITO layer are symmetrical structure.
4. the wire structures of double-deck ITO according to claim 2 is characterized in that, at the infall of every row or every row touch-control electrode, said rhombus electrode interconnects with the mode of bridge joint.
5. the wire structures of double-deck ITO according to claim 1 is characterized in that, the direction that said rhombus electrode caves inward is vertical each other with the direction that adjacent two rhombus electrodes link to each other.
6. the wire structures of double-deck ITO according to claim 1 is characterized in that, the shape in said space is rectangle.
7. the wire structures of double-deck ITO according to claim 6 is characterized in that, the top in said space can be linear pattern, arc or shape such as trapezoidal.
8. the wire structures of double-deck ITO according to claim 1 is characterized in that, the width of the connecting portion between the distance between two spaces and the said rhombus electrode is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102208132A CN102778973A (en) | 2012-06-29 | 2012-06-29 | Double-layer ITO (indium tin oxide) wiring structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102208132A CN102778973A (en) | 2012-06-29 | 2012-06-29 | Double-layer ITO (indium tin oxide) wiring structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102778973A true CN102778973A (en) | 2012-11-14 |
Family
ID=47123901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102208132A Pending CN102778973A (en) | 2012-06-29 | 2012-06-29 | Double-layer ITO (indium tin oxide) wiring structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102778973A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105573551A (en) * | 2015-12-15 | 2016-05-11 | 南京点触智能科技有限公司 | Capacitance type touch screen sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110141034A1 (en) * | 2009-12-14 | 2011-06-16 | Wintek Corporation | Touch panel |
| CN202142043U (en) * | 2011-06-20 | 2012-02-08 | 德理投资股份有限公司 | Projection type capacitance touch control panel with impedance adjusting structure |
-
2012
- 2012-06-29 CN CN2012102208132A patent/CN102778973A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110141034A1 (en) * | 2009-12-14 | 2011-06-16 | Wintek Corporation | Touch panel |
| CN202142043U (en) * | 2011-06-20 | 2012-02-08 | 德理投资股份有限公司 | Projection type capacitance touch control panel with impedance adjusting structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105573551A (en) * | 2015-12-15 | 2016-05-11 | 南京点触智能科技有限公司 | Capacitance type touch screen sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102662544A (en) | Double-layer ITO (indium tin oxide) wire arrangement structure | |
| TWI436256B (en) | Mutual capacitive touchpad and modular mutual capacitive touchpad | |
| CN102622151A (en) | Wiring structure of double-layer information technology outsourcing (ITO) | |
| KR20120007716U (en) | Capacitive type touch sensor touch detection device and touch control terminal | |
| CN102591541A (en) | Wire arrangement structure for single-layer indium tin oxide (ITO) | |
| CN102799301A (en) | Electrode structure of touch panel, manufacturing method and touch panel | |
| US8907919B2 (en) | Sensing structure of touch panel | |
| KR20110041109A (en) | Touch panel | |
| CN104951161A (en) | Liquid crystal display with touch function and conducting layer structure thereof | |
| CN106293188A (en) | A kind of contact panel | |
| TWM455922U (en) | Temperature-sensing type touch panel | |
| CN102819375B (en) | Capacitive touch screen | |
| KR20120020455A (en) | Touch screen having channel division type sensor patern | |
| CN103257762A (en) | Projected capacitive touch panel | |
| CN102810035A (en) | Projection-type capacitive touch panel | |
| CN102750039A (en) | Wiring structure of touch screen | |
| CN102314272B (en) | Capacitance type touch screen with bi-layer structure | |
| CN104571760B (en) | Panel and its position of touch detection method with touch controllable function | |
| CN102855043B (en) | A kind of single conductive layer multi-point identification capacitor screen | |
| CN204719701U (en) | A kind of contact panel | |
| CN102707836A (en) | Single-layer ITO (indium tin oxide) wiring structure | |
| CN102253751A (en) | Wiring structure and positioning method of single-layer ITO (Indium Tin Oxide) | |
| CN102339182A (en) | Single layer indium tin oxide (ITO) wiring structure | |
| CN202189340U (en) | Electrode structure of touch panel and touch panel | |
| CN102778973A (en) | Double-layer ITO (indium tin oxide) wiring structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121114 |