CN102775144B - BCZN microwave ceramic medium material and preparation method thereof - Google Patents

BCZN microwave ceramic medium material and preparation method thereof Download PDF

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CN102775144B
CN102775144B CN201210248673.XA CN201210248673A CN102775144B CN 102775144 B CN102775144 B CN 102775144B CN 201210248673 A CN201210248673 A CN 201210248673A CN 102775144 B CN102775144 B CN 102775144B
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crystalline phase
bczn
microwave
microwave ceramic
doping
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CN102775144A (en
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唐斌
张晓�
杨成韬
周晓华
钟朝位
张树人
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University of Electronic Science and Technology of China
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Abstract

The invention discloses a microwave ceramic medium material and a preparation method thereof, belonging to the technical field of electronic materials. The microwave ceramic medium material comprises a crystalline phase structure and a doping agent, wherein the principal crystalline phase is BCZN(BaCo1/3Nb2/3O3-BaZn1/3Nb2/3O3), and the secondary crystalline phase is Ba5Nb4O9 and is generated by following a B: bite and B:: bite atom non-stoichiometric ratio and raw material doping. The principal crystalline phase comprises the following raw materials including BaCO3, Co2O3, ZnO and Nb2O5; and a doping agent comprises Al203 and Ta2O5 which account for 0.1-1.50 percent of crystalline phase structural mass, or comprises CeO2 or Y2O3 which accounts for 0.0-0.5 percent of the crystalline phase structural mass. Due to the adoption of the traditional solid phase sintering method, the microwave ceramic medium material has the characteristics of simpleness, easy control, environment friendliness and low cost; and the obtained microwave ceramic medium material has a high Q*f value (-76500GHz), a medium dielectric constant (35+/1) and a frequency temperature coefficient (0+/-10) close to 0, is suitable for making a microwave device medium material, and can meet the manufacturing requirement of a microwave device.

Description

A kind of BCZN microwave ceramic dielectric material and preparation method thereof
Technical field
The invention belongs to electronic information function material and device technology field, be specifically related to that a kind of dielectric constant is moderate, quality factor are higher, frequency-temperature coefficient approaches BCZN microwave ceramic dielectric material of zero and preparation method thereof.
Background technology
The microwave epoch that microwave dielectric material has entered removableization, facilitation, miniaturization in the communication technology are widely used in the communications field such as TV, radar with features such as its low-loss, high-k, small frequency temperature coefficients.The file of " electronics and information industry adjustment development planning outline " proposes the importance of the media ceramic of the seriation of development dielectric constant, microwave dielectric property excellence.High-k, high quality factor, frequency-temperature coefficient approach zero and sintering temperature low be the primary study developing direction of microwave-medium ceramics.
Microwave dielectric material mainly can be divided into BaO-TiO by material system 2, BaO-Ln 2o 3-TiO 2, (Zr, Sn) TiO 4and A (B ' 1/3b " 2/3o 3) be four classes, wherein AB ' 1/3b " 2/3o 3the research of system is the most extensive, AB ' 1/3b " 2/3o 3bCZN(BaCo in system 1/3nb 2/3o 3-BaZn 1/3nb 2/3o 3) system is because Q × f value is higher, τ fadjustable and Nb 2o 5relative low price, sintering temperature are compared with the advantage such as low and receive much concern.BZN: ε r=41, τ f≈ 30ppm/ DEG C; BCN: ε r=32, τ f≈-12ppm/ DEG C, its ε rand τ fall adjustable, forefathers are in to the research process of this system microwave-medium ceramics, and its main purpose is to retain its high dielectric constant and high quality factor, and adjusts τ fclose to zero.1977, the people such as Kawashima reported the superiority of BZN as low-loss microwave dielectric material; 1987, Cheol-Woo Ahn etc. did concrete research to the properity of BCN and xBZN-(1-x) BCN system, points out that microwave property is best in the time of x=0.7: ε r=34.5, Q × f=97000GHz, τ f=0ppm/ DEG C, but this research need anneal under 20 DEG C/min annealing conditions, condition harshness; Paik etc. find that in the research of BMN the meeting that departs from of Mg ion promotes the degree of order of BMN and the increase of density, improves microwave property, thereby has promoted the research of domestic and international BCZN system A position, B position atom non-stoichiometric; 2005,0.4wt%CeO adulterated in the research discovery 0.7BZN-0.3BCN such as F.Azough 2can reach the excellent properties of Q × f=84000GHz, but because Ball-milling Time reaches 36 hours, briquetting pressure can not be applied to actual production up to restrictions such as 100MPa; 2006, G.A.Ravi and partner thereof found at Ca 0.7ti 0.7la 0.3al 0.3o 3a small amount of Al adulterates in ceramic systems 2o 3can promote the growth of crystal grain and reduce space, the method can be applicable in BCZN system pottery equally.
Summary of the invention
The object of this invention is to provide that a kind of dielectric constant is moderate, quality factor are higher, near frequency-temperature coefficient adjustable and BCZN microwave ceramic dielectric material that can intermediate sintering temperature and preparation method thereof continuously zero.
Technical solution of the present invention is as follows:
A kind of BCZN microwave ceramic dielectric material, comprises crystal phase structure and dopant; In described crystal phase structure, principal crystalline phase is Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3, with micro-secondary crystalline phase Ba 5nb 4o 15; Described dopant comprises 0.1% ~ 1.50% the Al that is equivalent to crystal phase structure quality summation 2o 3and Ta 2o 5.
In above-mentioned BCZN microwave ceramic dielectric material, described Al 2o 3doping be equivalent to 0.03% ~ 0.5% of crystal phase structure quality summation; Described Ta 2o 5doping be to be equivalent to 0.07% ~ 1.0% of crystal phase structure quality summation.
In above-mentioned BCZN microwave ceramic dielectric material, described dopant also comprises 0.0% ~ 0.5% the CeO that is equivalent to crystal phase structure quality summation 2or Y 2o 3.
The present invention is by compound with the BCN ceramic phase with negative frequency temperature coefficient the BZN pottery with positive frequency temperature coefficient, not only can make their two contrary frequency-temperature coefficients cancel out each other, and by when doping way of non-stoichiometry, can make sintering temperature reduce, microwave dielectric property that the more important thing is two kinds of crystalline phases is all very excellent, and the ceramic microwave dielectric property after making has had guarantee.In BCZN microwave ceramic dielectric material, suitable B ' position atom disappearance or B " have more than needed and can improve ceramic microwave property.Doping is mainly in order to improve ceramic Q × f value.The addition of C eO 2, Y 2o 3the doping of rare earth oxide can promote Ceramic grain growth and increase the degree of order of crystal structure, thereby improve Q × f value; A small amount of Al 2o 3can promote ceramic grain growth and reduce intercrystalline space; The Ta of trace 2o 5doping can significantly improve Q × f value of BCZN pottery.The sintering temperature of this microwave-medium ceramics is at 1340 DEG C～1420 DEG C, DIELECTRIC CONSTANT ε r=35.0 ± 1, Q × f value reaches as high as 76469GHz, frequency-temperature coefficient τ fadjustable continuously near 0.
The preparation method of above-mentioned BCZN microwave ceramic dielectric material, as shown in Figure 1, comprises the following steps:
Step 1: get the raw materials ready.
Select BaCO 3, Co 2o 3, ZnO, Nb 2o 5for synthetic Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3the raw material of principal crystalline phase, the mol ratio of controlling between Ba, Co, Zn and Nb is Ba:Co:Zn:Nb=3:(0.6+x): (0.4+y): (2+z), wherein-0.041≤x≤0 ,-0.048≤y≤0 ,-0.024≤z≤0.012, the purity of each component raw material is more preferably greater than 99%.Select Al 2o 3and Ta 2o 5as doped raw material and above-mentioned four kinds of raw material mixes, Al 2o 3and Ta 2o 5the quality of doped raw material and be Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.1% ~ 1.50% of secondary crystalline phase quality summation, wherein said Al 2o 3doping for being equivalent to Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.03% ~ 0.5% of secondary crystalline phase quality summation; Described Ta 2o 5doping for being equivalent to Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.07% ~ 1.0% of secondary crystalline phase quality summation.Doped raw material also can contain simultaneously and be equivalent to Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.0% ~ 0.5% CeO of secondary crystalline phase quality summation 2or Y 2o 3.
Step 2: ball milling.
Principal crystalline phase raw material and doped raw material that step 1 is got ready are mixed in nylon ball grinder, using zirconium ball as abrading-ball, deionized water is as ball-milling medium, according to material: ball: water=1:5:0.8 weight ratio, ball milling 4 hours dries and cross 40 mesh sieves by a ball milling material at 100 DEG C.
Step 3: pre-burning.
To dry material pre-burning 5 hours under 1150 DEG C ~ 1200 DEG C temperature conditions, obtain Preburning material.
Step 4: granulation, moulding.
Preburning material is added and is equivalent to polyvinyl alcohol (PVA) granulation of Preburning material quality 5 ~ 9%, and be pressed into green compact under 20MPa.
Step 5: sintering.
By step 4 gained green compact, under 1340 DEG C ~ 1420 DEG C temperature conditions, sintering 20 hours, obtains final BCZN microwave ceramic dielectric material.
Microwave device ceramic medium material prepared by the present invention, has lower loss after testing, moderate dielectric constant and good machinability.Its preparation technology and traditional production process are basic identical, can obtain crystalline phase single, the microwave device ceramic medium material of what compact structure and processing characteristics were good have lower sintering temperature and the higher quality factor.BCZN principal crystalline phase powder sample is carried out to material phase analysis as shown in Figure 1 with XRD diffraction approach; With scanning electron microscope sem, final microwave device ceramic medium material is observed as shown in Figure 2, can be found out microwave device ceramic medium material surfacing densification provided by the invention, in the time adulterating experiment, occur small second-phase Ba 5nb 4o 15.
Compared with prior art, the present invention has following characteristics:
1, " non-stoichiometric research and the doping vario-property research of position atom combine B ' position, B, obtain the microwave-medium ceramics of excellent performance;
2, BCN and BZN needn't be prepared respectively, have adopted single synthesis technique, easily realize the steady production of material;
3, in formula of the present invention, not containing volatility or the heavy metal substances such as Pb, Cd, is a kind of environment friendly microwave dielectric ceramic;
4, sintering temperature is minimum can, to 1340 DEG C, have certain power savings advantages;
5, raw material are sufficient, cheap at home, make the cost degradation of high performance microwave communication components and parts material in modern communication technology become possibility.
Brief description of the drawings
Fig. 1 is schematic flow sheet of the present invention.
Fig. 2 is the XRD analysis result of BCZN microwave ceramic dielectric material provided by the present invention.
Fig. 3 is microwave device ceramic medium material scanning electron microscope sem figure prepared by the present invention.
Embodiment
Embodiment 1 ~ 4
The concrete implementation step that makes these embodiment microwave-medium ceramics is as follows:
(1) select BaCO 3, Co 2o 3, ZnO, Nb 2o 5, Al 2o 3and Ta 2o 5for raw material, the mol ratio of controlling between Ba, Co, Zn and Nb is Ba:Co:Zn:Nb=3:(0.6-0.041): (0.4-0.048): (2+0.012), Al 2o 3and Ta 2o 5total doping ratio be respectively Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 15secondary crystalline phase quality summation 0.125%, 0.250t, 0.500%, 1.000%.Wherein Al 2o 3doping ratio be respectively Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.034%, 0.068%, 0.136%, 0.272% of secondary crystalline phase quality summation; Ta 2o 5doping ratio be respectively Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.091%, 0.182%, 0.364%, 0.728% of secondary crystalline phase quality summation.Specifically fill a prescription in table 1;
Table 1 embodiment 1 ~ 4 is concrete to be become to be grouped into
(2) accurately weigh each raw material, ball milling 4 hours in ratio in table 1.Material after oven dry is crossed after 40 mesh sieves under 1150 DEG C of temperature conditions pre-burning 5 hours, obtains Preburning material.Add PVA solution to carry out granulation, dry-pressing formed under 20MPa pressure, by base substrate sintering 20 hours at 1340 DEG C, make microwave-medium ceramics;
(3) according to Hakki-Coleman dielectric resonance method, by the dielectric property under network analyzer (Agilent Technologies E5071C) test sample high frequency.Frequency-temperature coefficient is by formula calculate gained, wherein t 1=25 DEG C, t 2=80 DEG C, f t1and f t2it is the resonance frequency at these two temperature spots.Test result is as shown in table 2.
Table 2 embodiment 1 ~ 4 microwave dielectric property
Embodiment 5 ~ 9
These embodiment discuss B " non-stoichiometric of position Nb atom, and doped with Al simultaneously 2o 3and Ta 2o 5improve grain morphology and microwave property, the concrete implementation step that makes these embodiment microwave-medium ceramics is as follows:
(1) select BaCO 3, Co 2o 3, ZnO, Nb 2o 5, Al 2o 3and Ta 2o 5for raw material, the mol ratio of controlling between Ba, Co, Zn and Nb is Ba:Co:Zn:Nb=3:(0.6-0.041): (0.4-0.048): (2+z), wherein-0.024≤z≤0.006, Al 2o 3and Ta 2o 5doping be respectively Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.068%, 0.182% of secondary crystalline phase quality summation, specifically fills a prescription in table 3;
Table 3 embodiment 5 ~ 9 is concrete to be become to be grouped into
(2) accurately weigh each raw material, ball milling 4 hours in ratio in table 3.Material after oven dry is crossed after 40 mesh sieves under 1150 DEG C of temperature conditions pre-burning 5 hours, obtains Preburning material.Add PVA solution to carry out granulation, dry-pressing formed under 20MPa pressure, by base substrate sintering 20 hours at 1340 DEG C, make microwave-medium ceramics;
(3) according to Hakki – Coleman dielectric resonance method, by the dielectric property under network analyzer (Agilent Technologies E5071C) test sample high frequency.Frequency-temperature coefficient is by formula calculate gained, wherein t 1=25 DEG C, t 2=80 DEG C, f t1and f t2it is the resonance frequency at these two temperature spots.Test result is as shown in table 4.
Table 4 embodiment 5 ~ 9 microwave dielectric properties
Embodiment 10 ~ 11
The concrete implementation step that makes these embodiment microwave-medium ceramics is as follows:
(1) select BaCO 3, Co 2o 3, ZnO, Nb 2o 5 areraw material, the mol ratio of controlling between Ba, Co, Zn and Nb is Ba:Co:Zn:Nb=3:0.6:0.4:2, simultaneously doped with Al 2o 3and Ta 2o 5, doping is respectively Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.068%, 0.182% of secondary crystalline phase quality summation, and the Ba (Co that adulterates 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.40% CeO of secondary crystalline phase quality summation 2or 0.46%Y 2o 3, concrete formula refers to table 5;
(2) accurately weigh each raw material, ball milling 4 hours in ratio in table 5.Material after oven dry is crossed after 40 mesh sieves under 1200 DEG C of temperature conditions pre-burning 5 hours, obtains Preburning material.Add PVA solution to carry out granulation, dry-pressing formed under 20MPa pressure, by base substrate sintering 20 hours at 1420 DEG C, make microwave-medium ceramics; Test performance is as shown in table 6.
The present invention is not limited to above-mentioned 11 specific embodiments, can find out by above embodiment, embodiment 2,9,10 have all obtained excellent microwave property, by carry out B ' position and the B of BZCN system simultaneously " position atom non-stoichiometric, doping vario-property two aspect adjustment, and suitably adjust preparation technology and parameter, thus the microwave-medium ceramics that obtains new excellent performance is feasible completely.
Table 5 embodiment 10 ~ 11 is concrete to be become to be grouped into
Table 6 embodiment 10 ~ 11 microwave dielectric properties

Claims (6)

1. a BCZN microwave ceramic dielectric material, comprises crystal phase structure and dopant; In described crystal phase structure, principal crystalline phase is Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3, with micro-secondary crystalline phase Ba 5nb 4o 15; Described dopant comprises 0.1%～1.50% the Al that is equivalent to crystal phase structure quality summation 2o 3and Ta 2o 5.
2. BCZN microwave ceramic dielectric material according to claim 1, is characterized in that, described Al 2o 3doping be equivalent to 0.03%～0.5% of crystal phase structure quality summation; Described Ta 2o 5doping be to be equivalent to 0.07%～1.0% of crystal phase structure quality summation.
3. BCZN microwave ceramic dielectric material according to claim 1, is characterized in that, described dopant also comprises CeO 2or Y 2o 3, described CeO 2or Y 2o 3quality be no more than 0.5% of described crystal phase structure quality summation.
4. a preparation method for BCZN microwave ceramic dielectric material, comprises the following steps:
Step 1: get the raw materials ready;
Select BaCO 3, Co 2o 3, ZnO, Nb 2o 5for synthetic Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3the raw material of principal crystalline phase, the mol ratio of controlling between Ba, Co, Zn and Nb is Ba:Co:Zn:Nb=3:(0.6+x): (0.4+y): (2+z), wherein-0.041≤x≤0 ,-0.048≤y≤0 ,-0.024≤z≤0.012; Select Al 2o 3and Ta 2o 5as doped raw material and above-mentioned four kinds of raw material mixes, Al 2o 3and Ta 2o 5the quality of doped raw material and be Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.1%～1.50% of secondary crystalline phase quality summation;
Step 2: ball milling;
Principal crystalline phase raw material and doped raw material that step 1 is got ready are mixed in nylon ball grinder, using zirconium ball as abrading-ball, deionized water is as ball-milling medium, according to material: ball: water=1:5:0.8 weight ratio, ball milling 4 hours dries and crosses 40 mesh sieves by a ball milling material at 100 DEG C;
Step 3: pre-burning;
To dry material pre-burning 5 hours under 1150 DEG C～1200 DEG C temperature conditions, obtain Preburning material;
Step 4: granulation, moulding.
Preburning material is added and is equivalent to the polyvinyl alcohol granulation of Preburning material quality 5%～9%, and be pressed into green compact under 20MPa;
Step 5: sintering;
By step 4 gained green compact, under 1340 DEG C～1420 DEG C temperature conditions, sintering 20 hours, obtains final BCZN microwave ceramic dielectric material.
5. the preparation method of BCZN microwave ceramic dielectric material according to claim 4, is characterized in that, in doping material: described Al 2o 3doping for being equivalent to Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.03%～0.5% of secondary crystalline phase quality summation; Described Ta 2o 5doping for being equivalent to Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.07%～1.0% of secondary crystalline phase quality summation.
6. according to the preparation method of the BCZN microwave ceramic dielectric material described in claim 4 or 5, it is characterized in that, doped raw material contains CeO simultaneously 2or Y 2o 3, described CeO 2or Y 2o 3interpolation quality be no more than Ba (Co 1/3nb 2/3) O 3-Ba (Zn 1/3nb 2/3) O 3principal crystalline phase and Ba 5nb 4o 150.5% of secondary crystalline phase quality summation.
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CN102992762B (en) * 2012-11-16 2014-08-27 武汉凡谷电子技术股份有限公司 Barium-cobalt-zinc-niobium based microwave dielectric ceramics and preparation method thereof
CN107586131A (en) * 2017-09-06 2018-01-16 天津大学 A kind of near-zero resonance frequency temperature coefficient microwave-medium ceramics and preparation method thereof
CN110183228A (en) * 2019-06-06 2019-08-30 桂林理工大学 A kind of positive and negative adjustable two-phase composite microwave medium ceramic material of temperature coefficient of resonance frequency and preparation method thereof
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1793035A (en) * 2005-11-10 2006-06-28 西安交通大学 Low temp, sintered bismuth base microwave medium ceramic material and preparation process thereof
CN1810715A (en) * 2006-02-22 2006-08-02 中国计量学院 Microwave dielectric ceramic with low loss and low temperature coefficient of frequency and its prepn

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012029956A1 (en) * 2010-09-02 2013-10-31 日本特殊陶業株式会社 Dielectric porcelain, manufacturing method thereof, and dielectric resonator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1793035A (en) * 2005-11-10 2006-06-28 西安交通大学 Low temp, sintered bismuth base microwave medium ceramic material and preparation process thereof
CN1810715A (en) * 2006-02-22 2006-08-02 中国计量学院 Microwave dielectric ceramic with low loss and low temperature coefficient of frequency and its prepn

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
B位非化学计量比对0.6BCN-0.4BZN陶瓷性能的影响;吕鑫 等;《电子元件与材料》;20100930;第29卷(第9期);第44-47页 *
吕鑫 等.B位非化学计量比对0.6BCN-0.4BZN陶瓷性能的影响.《电子元件与材料》.2010,第29卷(第9期),第44-47页.

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