CN102763194A - System and method for doping semiconductor materials - Google Patents

System and method for doping semiconductor materials Download PDF

Info

Publication number
CN102763194A
CN102763194A CN2010800640879A CN201080064087A CN102763194A CN 102763194 A CN102763194 A CN 102763194A CN 2010800640879 A CN2010800640879 A CN 2010800640879A CN 201080064087 A CN201080064087 A CN 201080064087A CN 102763194 A CN102763194 A CN 102763194A
Authority
CN
China
Prior art keywords
laser
substrate
doping
substrate surface
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800640879A
Other languages
Chinese (zh)
Inventor
里格·博梅
拉尔斯·哈特维希
罗比·埃伯特
马赛厄斯·缪勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adams Inola Solutions Ltd By Share Ltd
Original Assignee
Roth and Rau AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth and Rau AG filed Critical Roth and Rau AG
Publication of CN102763194A publication Critical patent/CN102763194A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)

Abstract

The invention relates to a system and to a method for doping substrates using a laser, wherein in the method at least one doping agent is in contact with the substrate surface and the substrate surface is locally heated by a laser beam. It is the aim of the present invention to provide a laser doping process, which allows for substrates to be doped at high speed, while generating a low dislocation density on the substrate surface, achieving good electrical activation of dopants, and moreover providing the option of deliberately doping certain regions to a higher degree.; Said aim is achieved by a system for doping substrates using a laser, wherein the system comprises at least one fiber laser having a laser beam with a round beam cross-section and a scanner unit, by which a laser beam can scan the substrate surface, wherein the emitted light of the fiber laser has a wavelength in the range of 750 nm to 3000 nm. The aim is further achieved by a method for doping substrates, in which at least one doping agent is in contact with the substrate surface and the substrate surface is locally heated by a laser beam, wherein a fiber laser having a laser beam with a round beam cross-section is generated, which is guided over the substrate surface by a scanner unit, wherein the fiber laser emits light having a wavelength of 750 nm to 3000 nm.

Description

The system and method for doped semiconductor materials
Technical field
The present invention relates to a kind of system and method that uses the laser doped substrate, in the method, at least a dopant contacts substrate surface, and carries out the localized heating of substrate surface through laser beam.
Background technology
In industrial practice, the system of the type of mentioning is generally batch furnace or continuous doped system, in these systems, solar cell substrate is heated to greater than the required temperature of 800 ℃ dopant.When the emitter of solar cell mixes, there is opposite doping requirement sometimes, for example, described in document DE 102007035068.In the optics open area, mixing necessarily can not be too high, because very high concentration of dopant atoms can promote the reorganization of electron hole pair, thereby influences the high efficiency of required solar cell.On the other hand, especially in the contact zone of connection electrode, very high doping is necessary, to produce required ohmic contact.Recently, opposite requirement causes at first realizing in the laboratory model higher doped regions and the so-called selective emitter in the contact zone.When utilizing conventional method to realize, make the expenditure that these selective emitters often need great number.
In recent years, also developed the laser system that is used for doped semiconductor.Document DE 102004036220B4 has described the laser doping process, has replaced traditional stove doping process, and the advantage of laser doping process is mainly more favourable than in the stove process of processing time and process stream, and energy efficiency is higher in laser process.Yet the method described in the document exists the substrate of laser doping to have high displacement density and low-quality problem usually.
Document has solved in melted surface and the problem of high displacement density after the crystallization again, because laser beam is concentrated into the line of wide 10 μ m, long 100 μ m and the surface of this line-focus scanning substrate.The shortcoming of this method of mentioning is reduction process speed and the technology expenditure that realizes reliable automatic focusing system.The purpose of doping characteristic is based on the doping characteristic that is produced in the stove process.In other words, purpose is with the scope up to 1 micron as doping depth.Therefore,, draw to draw a conclusion, must use wavelength to be 600nm or littler laser emission from the penetration depth of known light silicon according to wavelength.
At present, in the production of silicon solar cell, the batch processing system that is used to mix is a standard.Shortcoming is relatively long processing time and the big machinery size in these systems.Controllable temperature is restricted to is lower than 1000 ℃, and because therefore the heating entire substrate exists in the problem that substrate back is introduced pollutant.Another problem in traditional doping method is that alloy can be diffused in the silicon crystal, but does not incorporate on the lattice point in large quantities alloy and not electric activating dopant.
Summary of the invention
The purpose of this invention is to provide a kind of laser doping process; Allow at full speed doped substrate, the good electricity activation of the low displacement density of generation, realization dopant on substrate surface in this process; In addition, right to choose with doping specific region, specific aim mode height ground also is provided.
System through type mentioned above achieves this end; This system has at least one fiber laser with laser beam and scanning element; Said laser beam has the circular light area of beam; Said laser beam can be through said scanning element scanning substrate surface, and the emission light of said fiber laser has the wavelength in the scope of 750nm to 3000nm.
In the laser technique field, fiber laser is up-to-date improvement.The characteristic of these new lasers is very high efficient and very high beam quality, and price is low simultaneously.Because therefore the high efficiency of this new laser can walk different routes when structure laser doping system.Now no longer only in focus, provide partly and handle required energy; But can utilize laser beam to operate; The circular light area of beam of laser beam has the size of 20 μ m～500 μ m, and this cross section is available in the suitable beam length scope of about 1mm.The power of this laser is suitable for handling the entire substrate surface of photovoltaic substrate.
In the comparison of the energy efficiency of laser doping system according to the present invention and traditional stove doped system, have superiority according to laser doping of the present invention system.In fiber laser, produce light beam efficiently, when the surface of heated substrate only but not during entire substrate, in the laser doping process, use light energy effectively.In the doping process, the protection substrate is avoided heat load and has also been opened up new possibility for the whole solar cell technology.Therefore, laser doping is different from stove and mixes, and can occur in the step afterwards in the whole technique, and in this step, substrate has had temperature-sensing element (device).At first in than complicated technology, for example, in two-sided battery notion, this advantage is shown up prominently.Utilize the laser doping system, also can on two surfaces of substrate, carry out a plurality of doping processes successively.
Compare with traditional stove doped system, not only more effectively use energy, and more effectively dopant is provided for the semiconductor doping task.Dopant is sneaked at hope middle lattice point place from the teeth outwards, but because higher temperature is advantageously sneaked into dopant efficiently on lattice point.Because more efficient use is enough so less use dopant.
For laser beam is moved on substrate surface, according to the present invention, also can use suitable commercially available scanning element, scanning element can be with required precision and speed mobile beam.Therefore, can change the speed of scanner, thereby except the uniform treatment on whole surface, local difference is handled and also is fine.
In the time can operating scanning element and fiber laser itself very neatly, can very neatly, controllably control laser process with optimizable mode.Owing to comprise the attribute of the system of fiber laser and scanning element, can control the degree of depth of the doped region in the substrate neatly.Can accurately adjust doping profile and anti-resistive.Therefore, use according to laser doping of the present invention system and can produce improved products, for example improved solar cell.
The advantage in actual doping process, use laser doping also to produce the further advantage of processing aspect.When substrate surface was rapidly heated because of the laser beam of incident, substrate did not need warm-up phase and cooling stage.Therefore overall process is fine faster.In addition, can utilize than the littler bulk of doping stove and realize according to laser doping of the present invention system.Saving in space when using the laser doping system causes the cost advantage when setting up manufacturing installation.
According to the present invention, the laser doping system uses fiber laser, the light of fiber laser emission wavelength in the scope of 750nm～3000nm.Complicated fiber laser has this wave-length coverage.Yet this wave-length coverage seems at first and is not suitable for handling silicon substrate that because in this scope, silicon is transmissive.Because the high power density that optical-fiber laser is intrafascicular, thus the surface of heated substrate very apace, yet, follow the heat accumulation effect that volume excitation takes place.The optical property of substrate changes because of the material heating.Absorption strengthens in silicon.Therefore penetration depth descends.Even can be through the adjustment suitable parameters to required scope control penetration depth, said parameter for example is power, sweep speed, pulse energy, pulse duration or repetition rate.Compare with utilizing the stove process, in this wave-length coverage, utilize deeper doped silicon substrate of laser doping system.Therefore, in the production of solar cell, especially in the phosphorus doping of the emitter of solar cell, can realize the doping depth in the scope of 1 μ m～10 μ m for example.Utilize higher doping depth can improve the contact and the overall efficiency of solar cell, have the even doping on this degree of depth simultaneously.
Basically also can use the fiber laser of the light in the wave-length coverage of launching 500nm～600nm.Fiber laser in this wave-length coverage is only just commercially available soon.For the application that requires little doping depth, the system that is operated in this short wave-length coverage is noticeable especially.
In preferred disposition of the present invention, employed fiber laser is continuous wave (continuous light beam) laser or has the pulse laser of the pulse length in the scope of 80ns～10 μ s of length relatively.Under these conditions, the doping that does not damage the substrate of its crystal structure from the teeth outwards is fine.In addition, in substrate crystal, sneak into alloy and electric activating dopant well.In the continuous wave operation, for example the extra high power of 5kW can get.Therefore, use continuous-wave laser to have superiority, especially for fast and economic processing.In pulse operation, only for example the low-power of 300W can get.Pulse manipulated advantage is the extra parameter that gets.Therefore, overlapping between for example can arteries and veins to applying bigger influence separating of dopant material through impulse waveform, pulse duration, repetition rate and space.
In favourable improvement of the present invention, this system has a plurality of fiber lasers and/or at least one beam splitter, produces a plurality of laser part light beams with the formation that utilizes the multiple beam device.Use the laser of a plurality of parallel work-flows can help improving the output of system.Therefore; Can use laser beam splitter that more powerful laser beam (whole power of this laser beam not need in a branch of light) is divided into a plurality of laser part light beams; So, utilize a plurality of laser beams or laser part light beam and therefore handle substrate simultaneously to be fine with higher processing speed.
In embodiment of the present invention, the laser doping system is used for holographic beam is divided into the diffraction element of 50～400 laser part light beams.This beam splitter and corresponding task are complementary.For example, can use such split beam on solar cell substrate, to write a plurality of selective emitter finger pieces.In this case, preferably, beam splitter structurally is applicable to the layout of finger piece.Except finger piece, the contact electrode of solar cell also comprises main line (so-called " busbar "), and the load centralization of each finger piece is on main line.In the zone of the zone of each finger piece and " busbar ", all dispose the selective emitter of solar cell.Therefore, the laser doping process is divided into a plurality of job steps, these job steps are used to write each finger piece and " busbar ".In the laser doping process, can change doping depth, for example, this is used in each job step during the manufacturing selective emitter and forms darker doping.
In another favourable modification of the present invention, scanning element has at least one rapid scanner, and for example, rapid scanner can be vibration mirror scanning device, polygon scanner and/or MR scanner.Use such rapid scanner, can on large-area substrate, realize sufficiently high processing speed, this is corresponding to the demand from manufacturing.Move according to the laser beam of employed laser and plan and to select sweep unit.Under the guidance of this method, the current speed that can reach is 20m/s when using repetition rate up to the pulse laser of 1MHz, when using continuous wave laser, be 400m/s.
In the favourable configuration of the system that is used for doped substrate, scanning element has the scanning area of at least two substrates, extending.In this system; If handle less substrate, wafer for example, and; On the substrate carrier device, handle the for example wafer of 7x8; If then scanning element have with the same big scanning area of substrate carrier device be particularly advantageous because in this case, a fiber laser and a scanning element only need be installed by each system.Yet, also can on two or more laser beams, separate processing region, each laser beam has a scanning area littler than substrate carrier device.
In another improved, system according to the present invention had at least one and in the scanning area of laser, is used for the positioner of substrate and/or the control device that at least one is used for substrate.If not only on whole area, handle substrate, and substrate also will carry out special processing with local limiting mode, then need be with respect to the accurate position substrate of scanning element.In order to ensure this high positioning accuracy in the laser doping system; Can positioner well known in the prior art be integrated in the laser doping module; Perhaps can be on transporting direction; Arrangement and location device before the laser doping module then must use the transportation system with substrate location transmission accurately.
In addition, in another favourable improvement, can a kind of control device be provided for mixing fully.This control device can for prior art known measurement mechanism to optics or electrical surface characteristic.In order correctly to distribute measured value with respect to substrate location, substrate location transmission accurately also is necessary.
In addition, the method through doped substrate has solved the purpose that is proposed, and wherein, at least a dopant contact substrate surface is through the said substrate surface of laser beam localized heating.In this case, use the fiber laser that produces the circular light area of beam, and utilize scanning element guiding fiber laser on substrate surface, said fiber laser emission wavelength is the light of 750nm～3000nm.
The prerequisite that realizes said method is that laser technique has experienced fast development in recent years, and the fast development of technology has especially caused powerful and economic fiber laser.Realize technical good operation with economically reasonably the key property of laser doping method be the low price of fiber laser, the scanning element of the permission of the good beam quality with Gauss's power density distribution, circular light area of beam and high development in beam cross section scanning substrate surface.
In the method according to the invention, the fiber laser emission has the light of the wavelength of 750nm～3000nm.In this wave-length coverage, for lower powered light, silicon is transmissive.During high power density in the light beam that for example appears at fiber laser, yet substrate surface is changed by Fast Heating and optical property.As a result, the order of magnitude with 1 μ m reduces the penetration depth that light gets into silicon.Even can adjust accurate penetration depth through selecting processing parameter.
Yet, also can expect using such fiber laser basically, this fiber laser emission has the light of the wavelength of 500nm～600nm.So, when the laser that gets into substrate when hope has little penetration depth or little doping depth, at first make in this way.
When carrying out according to laser doping method of the present invention, verified, the pulse laser that advantageously uses the continuous-wave laser of continuous operation or have the long relatively pulse length in the scope of 80ns～10 μ s.The use meeting of these long pulses produces the relatively long temperature action time on substrate surface, therefore do not need or melted substrate surface a little only, and therefore after mixing, the crystal damage that on substrate surface, not should be noted that.Although the low relatively temperature of laser doping process is fully introduced dopant through long relatively temperature action time realization.
In preferred implementation according to the method for the invention; The impulse waveform of configuration pulse laser; Make its time-power diagram the almost waveform of rectangle occur; This square waveform has short rise time and the pulse length in the scope of 80ns～10 μ s at least, and does not have significant power peak.Compare available horsepower and concentrate on other pulse laser on the very short power peak, can utilize the very fiber laser of long pulse of generation with uniform pulse power.These long pulses allow gentle substrate processing, even when melted substrate, also can make crystal damage less, therefore produce a large amount of solar battery products.When the rapid take-off and landing of main pulse side, in other words, when reaching the pulse power of laser soon, the fast processing substrate is favourable.On the other hand, the side of decline can be more smooth, so that increase the temperature action time and allow slower and crystallization littler pressure.
In favourable modification according to the method for the invention, executable operations makes only substrate surface to be heated to keep its solid-state degree.Here, under low relatively temperature, in other words, be lower than under the fusion temperature of substrate, utilizing long relatively doping time, carrying out according to laser doping of the present invention.This allows very leniently to handle substrate.Through avoiding fusing and crystallization again, avoided fully and the relevant failure mechanism of crystallization again.For the processing of surface structuration with the solar cell substrate that increases light sensitivity, the doping method that uses that all risk insurance stays and do not melt the surface texture of being produced also is absolutely necessary.
In preferred implementation according to the method for the invention, this method is used for the doping on the whole surface of substrate.The fiber laser that utilizes continuous-wave laser or have a long pulse is leniently handled substrate and is all allowed the big substrate surface that mixes technically and economically, for example the zone of the optical activity on the solar cell.
In favourable improvement according to the method for the invention, be not the All Ranges of handling substrate surface identically, but load more and the area of mixing and being limited denselyer through heat.Be used to realize that the important method parameter of denseer doping is the scanner translational speed that reduces.Yet,, perhaps, in support pattern, also can change other parameter of laser doping method to this as alternative.
In possible modification according to the method for the invention, executable operations makes the local melting substrate surface.If not the configuration of surface that must keep substrate, then laser doping be attended by the fusing of substrate surface and again crystallization also be fine.Because lip-deep higher temperature and liquid state can produce very high doping.When using very high energy density, remove insulating barrier if desired or insulating barrier is diffused in the substrate of fusing, then also can open the insulating barrier that exists on the substrate.For example; When use had the solar cell substrate of existing emitter doping and ARC, modification can be used for opening the ARC in the zone that contacts subsequently and in these selective emitter zones, carry out higher doping simultaneously according to the method for the invention.In the method, owing to the surf zone that is merely the contact and provides conducts electricity, so simple especially, the self-regulating electric current deposition of contact is fine.
In another execution mode according to the method for the invention, because a plurality of laser shines each area of space of substrate surface simultaneously, and owing to parallel processing realizes the multiplication of processing speed, so processing speed increases.
In the concrete modification of laser doping method according to the present invention, laser beam is divided into the laser part light beam through laser beam splitter.When not handling entire substrate, but when only handling regional area, such method is at first noticeable.For example, if will be on solar cell substrate 50～400 fingers of write selectivity emitter, then can use such method.In doping method, can divide laser beam through the diffraction element that is used for holographic beam is divided into 50～400 laser part light beams, then this diffraction element 50～400 fingers of write selectivity emitter simultaneously.
In preferred implementation according to the method for the invention, scanning element makes laser beam along at least one direction in space, mobile at least two substrates.When using according to laser doping method of the present invention, situation about often occurring is that the scanning direction of a plurality of substrates along laser is in line.Because on a plurality of substrates, move laser beam identically, so this method is simple especially.According to the structure of native system, can carry out moving of laser beam at one or two direction in space of a plurality of substrates upper edge.
According to favourable improvement of the present invention, during mixing, utilize vehicle to support or the transportation substrate, vehicle has the surface of laser beam towards the direction reflected back of substrate.In other words, vehicle has reflecting surface, and this reflecting surface passes the laser beam of substrate to back reflective.In this case, can reuse the laser light reflected bundle,, therefore allow to improve the diffusion of dopant in substrate with the surface of heated substrate.
In this case, can on the back side of the front of substrate and substrate, doped layer be provided all, dopant can pass doped layer and enter into substrate.
Description of drawings
Hereinafter will be described the present invention in more detail by accompanying drawing, in the accompanying drawing:
Fig. 1 illustrates the possible basic structure according to laser doping of the present invention system by sketch map;
Schematically illustrated another the possible execution mode of the present invention of Fig. 2 wherein utilizes beam splitter with laser beam part light beam;
The possible impulse waveform of the schematically illustrated fiber laser of Fig. 3;
Fig. 4 illustrates the possible execution mode of system according to the present invention as the parts of lining treatment system on the line;
The sweep length of the schematically illustrated laser of Fig. 5 can extend on a plurality of substrates;
Fig. 6 is schematically illustrated according to another the possible execution mode of system of the present invention and the possible process of laser doping; And
Fig. 7 is schematically illustrated according to the applied variants that is used for the method for doped substrate of the present invention.
Embodiment
The schematically illustrated possible execution mode of Fig. 1 according to laser doping of the present invention system.Each element of laser doping system shown in Fig. 1 is only set forth its operation logic, does not therefore draw according to real ratio and details; The layout of element is only from the reason of introducing among the figure.Do not describe the concrete layout of the element in the laser doping system.Fiber laser 1 emission of lasering beam 2, scanning element 3 guide to laser beam 2 on the qualification path D on the substrate surface 4 of substrate 8.Hereinafter will be described each parts of laser doping system.
The laser doping system has at least one fiber laser 1, and in view, fiber laser 1 is a high power laser, and the power of fiber laser 1 is enough high, in acceptable time, to handle substrate 8.The wavelength of employed fiber laser 1 is near infrared spectral range, in the wave-length coverage of 750nm～3 μ m in the execution mode of Fig. 1.The power of wave-length coverage and fiber laser 1 is confirmed the penetration depth that laser beam 2 gets into substrate 8.In silicon substrate, preferably, the penetration depth of laser beam 2 is adjusted to the favourable depth bounds of 1 μ m～10 μ m.
The concrete fiber laser 1 that uses or its concrete wavelength that uses depend on the type of substrate 8 and required penetration depth.Therefore, for the plane doping in the silicon or for other backing material, also can use the wavelength shorter than 750nm.The availability of commercially available optical fiber layer is also depended in the selection of employed optical maser wavelength.At present, except the fiber laser that is operated near infrared range, the fiber laser that is produced the green glow in the spectral region of 500nm～600nm through frequency multiplication by infrared light is available.In the execution mode of the little doping depth of needs, these short-wavelength laser are preferred.
Yet; According to the present invention; According to the improvement of laser and new substrate or the application except that the doping of silicon solar cell emitter, also can use in the ultraviolet ray of wavelength and have other wave-length coverage between the infrared ray of wavelength of 11 μ m with 150nm.
Confirm, in the long relatively time, heat is accumulated the application that introducing substrate 8 helps the laser doping of solar cell substrate.Through laser treatment, the melted substrate surface 4 as few as possible, to avoid displacement.Therefore, employed fiber laser 1 is the laser of continuous operation among Fig. 1, in other words, is the cw-laser.In another configuration, not shown, fiber laser 1 is the pulse laser with pulse length of long relatively 80ns～10 μ s.When using pulse laser, can pass through the extra adjustment doping profile of impulse waveform.The rectangular pulse that has steep side at the starting point place of pulse has confirmed it is particularly advantageous.Yet impulse waveform is merely a parameter must considering together and regulate with other parameters.Therefore, relative moving speed, pulse-pulse overlap, line overlap, backing material and texture thereof, degree of crystallinity and the quality of the intensity distributions in laser power, beam diameter, beam quality, the beam cross-section, laser beam, employed doped substrate, ambient temperature and a series of other parameter play a role.
Laser beam 2 has simple circular light area of beam, preferably, on this cross section, has gaussian intensity profile.The advantage of such light beam is that simple optical system enough is used for light beam and forms, and the big depth of focus that has about 1mm on the focus diameter of light beam in the preferable range of 20 μ m～500 μ m.This long focusing range causes robust and process without a doubt.Therefore, in laser beam 2, need not complicacy and expensive autofocus system.
Scanning element 3 realizes laser beam 2 guiding substrate surfaces 4.As shown in Figure 1, scanning element 3 can comprise various sweep unit 3a, 3b.Here, each sweep unit 3a, 3b are responsible for laser beam 2 moving on direction in space usually.Yet scanning element 3 also can only have one and be used for the scanner that move of laser beam 2 on a direction in space.In this case, not shown here, substrate conveying arrangement (not shown) is guaranteed relatively moving between substrate on second direction in space 8 and laser beam 2.
In the view in Fig. 1, sweep unit 3a is a polygon scanner, and therefore sweep unit 3a can make laser beam move in substrate 8 upper edge x directions around its rotation A rotation.With vibration mirror scanning device (galvoscanner) as sweep unit 3b.Can make this scanner begin to move, so this scanner can make laser beam, and the y direction move in the substrate upper edge along both direction C around rotation B from its resting position.
The activation of sweep unit 3a, 3b is moved laser beam 2 on the qualification route D on the substrate surface 4.Can limit route D with the mode that even substrate doping takes place, but also can limit route D with the mode that realizes local higher-doped.According to required route selection sweep unit 3a, 3b on employed fiber laser 1 and the substrate 8.Except the scanner type of mentioning, also can use MR scanner or other scanner.
In the laser doping process, the dopant source that substrate surface 4 contact can exist with solid-state, liquid state or gaseous state.Yet dopant also can be aerosol form, especially, can also use other special shape together with laser doping.Therefore, under the influence of laser beam 2, can liquid precursor be transferred in the steam clock, begin to mix from the steam clock then.In the prior art all known compounds can be used as dopant.From second, third, the compound of the element of the 5th or the 6th main group is used for the doping of silicon, for example often uses the compound of boron and phosphorus.Especially, the first-selection that is used for doped silicon is to be used for phosphoric acid that the n type mixes and to be used for the boric acid that the p type mixes.Can with in the prior art known mode use dopant, for example through spraying, roller coating or spin coating using liquid dopant.
For the treat liquid dopant, it possibly be favourable utilizing the organic or inorganic solvent to dilute; Especially often make water as solvent.When using phosphoric acid, for example use 0.001%～85% concentration.Especially when using gaseous precursors, also can use inertia or initiatively dilute perhaps flushing gas, for example inert gas, nitrogen, hydrogen or oxygen.According to employed dopant, possibly advantageously dopant or substrate 8 are heated to the temperature up to 200 ℃.Need like this from the technical finesse reason or because of desired side effect (for example etching activity).
Fig. 2 illustrates another execution mode according to laser doping of the present invention system.In this case, utilize with Fig. 1 in identical Reference numeral sign components identical.The laser beam splitter that laser beam 2 is divided into a plurality of segment beams 9 is arranged in the path of laser beam 2.Here employed fiber laser 1 is very powerful laser, and the energy of this laser can be dispersed on a plurality of segment beams 9, and fiber laser 1 forms the multiple beam device and allows realizes overall treatment faster through handling each substrate surface simultaneously.Also can form the multiple beam device through using a plurality of lasers simultaneously.
In particularly preferred embodiments, yet not shown, the multiple beam device has fiber laser 1 and is used for the diffraction element that holographic beam is separated.Can use such laser beam splitter to be divided into 50～400 laser part light beams 9.For example, on solar cell, can use light beam to produce selective emitting electrode structure with fan-shaped dispersion.
Selective emitter comprises the height doped regions of substrate surface 4, on substrate surface 4, forms contact electrode subsequently.Be schematically shown like Fig. 2, selective emitting electrode structure comprises a large amount of very thin finger pieces 6, and some main lines 7 of arranging perpendicular to finger piece 6, according to english term, main line 7 named is " busbar ".In the preferred implementation of laser doping system, the laser beam of fiber laser 1 was opened in 2 minutes, make various piece light beam 9 can be used for each finger piece 6 of write selectivity emitter structure.
In general doped system, can carry out the manufacturing of selective emitting electrode structure according to the present invention, this system carries out the formation that plane base is mixed and local selective emitter mixes.Yet, also can set up special system, this system only is exclusively used in the perhaps only formation of part or selective doping of formation that plane base is mixed.Also can the dedicated system that be used to produce selective emitting electrode structure be combined with traditional stove doping process.In this case, the top layer of high doped, for example so-called " dead layer " after the stove doping is rendered as undesired layer, also can be used as the dopant source.
The selective emitting electrode structure of being produced through laser doping method according to the present invention is a characteristic with particularly advantageous attribute.Mentioned the higher doping depth that use laser doping method according to the present invention can produce.By dark and evenly mix emitter produced that another actively is characterized as opposing contact material (for example copper) and is diffused into the better barrier effect in the backing material.Another attribute that requires emphasis of the selective emitting electrode structure of being produced through laser doping method according to the present invention is the rapid horizontal description of height doped regions with respect to adjacent area.In addition, adjacent area can not suffer any damage because of selective emitter mixes.Use can realize greater than 1020at/cm in surf zone according to laser doping method of the present invention 3High dopant concentration and less than the low layer resistance of 20 Ω/sq.
Preferred substantial rectangular impulse waveform according to fiber laser of the present invention is shown Fig. 3 sketch map.After comparing the short rise time of pulse length, fiber laser beam reaches high maximum power very soon.As a result, realize quick substrate heating.Then high power is kept the long time, can be between 80ns and the 10 μ s.In this case, laser pulse does not have significant peak, even do not have in the starting point of laser pulse yet.In long relatively period, introduce the good diffusion and appropriate substrate processing that realizes dopant through energy.At least the partial melting of substrate surface 4 can take place here basically.Yet, in preferred implementation of the present invention, only substrate surface 4 is heated to its solid-state degree of maintenance through fiber laser 1.Therefore, can avoid undesired fusing and crystallization effect again, but can realize extraordinary doping result.
Fig. 4 illustrates detailed feasible inline system, and this inline system has according to laser doping of the present invention system, the laser doping system with the form of laser doping module as parts.Inline system has other parts, for example lock chamber, still not shown other parts.Laser doping system 10 comprises the parts outside process chamber 11 and the process chamber 11.Fiber laser 1 produces laser beam 2, and laser beam 2 gets into process chamber 11 through window 12 radiation.In the embodiment shown, laser doping system 10 only has a scanner, and especially, this scanner is polygon scanner 3a.Scanner can make laser beam 2 move along a direction in space; In the embodiment shown, in order to regulate the position of the laser treatment on the planar substrate surface 4, utilize substrate conveying arrangement 15 to move substrate along second direction in space.In other unshowned execution modes of laser doping module, use discontinuous conveying arrangement and two-dimensional scanner unit.The laser doping system also comprises the medium supply 13 and the media erase unit that is used to discharge used liquid, gas and assist gas that liquid and gaseous medium can be provided with controlled way.
As the replenishing of preceding accompanying drawing, the schematically illustrated scanning element 3 of Fig. 5 can make laser beam 2 on the path E on a plurality of substrates 8, move.In the embodiment shown, laser beam 2 moves along the y direction.In order to be controlled at the laser path on the second direction in space x on the substrate 8, move mode is not shown.For moving, light beam or wafer are moved, light beam and wafer are all moved.
Fig. 6 illustrates according to another the possible execution mode of laser doping of the present invention system and the process of laser doping.In first step, utilize transportation system 15 with one or more substrates 8 along in the transporting direction T immigration system, for example, transportation system 15 can be belt transportation system, cushion transport system or slip chuck transportation system.In the first method step e, use dopant, for example, dopant can be liquid, for example, through spraying or roller coating technology liquid is applied on the substrate 8.In next method step F; Substrate 8 further is transported to position detecting system 17; Here, utilize chuck 16 to pick up substrate 8, detect accurate substrate location; Then substrate 8 is transported on the chuck 16 with the high spatial positioning accuracy, gets in the scanning area of the fiber laser described in the above execution mode.In next method step G, the laser doping of substrate 8 is carried out in the utilization laser beam 2 of illustrated fiber laser here, because therefore high position precision also can realize the doping of the part qualification of substrate 8.In another method step H, also utilize high position precision that substrate 8 further is transported under the control device 18, can check the result of laser doping here.In case accomplish inspection, utilize the transportation system 15 of standard to carry out the further transportation of substrate 8.In next method step K, clean substrate 8 is for example through using flushing liquor.
Fig. 7 is schematically illustrated according to the possible applied variants that is used for the method for doped substrate 8 of the present invention.In the embodiment shown, substrate 8 to be mixed all has doped layer 19 or doped layer 20 on the substrate surface 4 and on substrate back 24.In another modification of the present invention, also can be only on the substrate surface 4 or doped layer 19 or doped layer 20 only be provided on substrate back 24.During mixing,, perhaps doped system is passed in substrate 8 transportations through vehicle 22 through vehicle 22 support substrates 8.For example, vehicle 22 is chuck or the vehicle that is suitable for supporting or transporting substrate 8.Vehicle 22 has reflecting surface 23, will pass laser beam 2 that substrate 8 impacts vehicles 22 through reflecting surface 23 and reflect and pass substrate 8, as reflection lasering beam 21.During back reflective, not only substrate surface 4 is by hot activation, and substrate back 24 is also by hot activation.As a result, dopant diffuses into substrate 8 from doped layer 19 and doped layer 20.Therefore, can use the method shown in Fig. 7, in front and back doped substrate 8.
As stated, the doped layer 20 on the substrate back 24 is optional, in other words, is not that doped layer 20 must be provided.Method shown in Fig. 7 also is suitable for improving the doping of the substrate face of substrate 8, in order to quicken to mix and/or in order to increase the penetration depth that dopant gets into substrate 8.
Shown in the example of Fig. 7, between doped layer on the substrate back 24 20 and vehicle 22, air gap 25 can be provided optionally.

Claims (19)

1. the system of a use laser doped substrate (8); It is characterized in that; Said system has at least one fiber laser (1) and scanning element (3); The laser beam of said fiber laser (2) has circular light area of beam (2), and said laser beam (2) can be through said scanning element scanning substrate surface (4), and the emission light of said fiber laser (1) has the wavelength in the scope of 750nm to 3000nm.
2. the system of claim 1 is characterized in that, said fiber laser (1) is continuous-wave laser or the pulse laser of pulse length in the scope of 80ns to 10 μ s.
3. according to claim 1 or claim 2 system is characterized in that said system has a plurality of fiber lasers (1) and/or at least one beam splitter (5), produces a plurality of laser part light beams (9) with the formation that utilizes the multiple beam device.
4. system as claimed in claim 3 is characterized in that, said multiple beam device has the diffraction element that is used for holographic beam is divided into 50 to 200 laser part light beams (9).
5. like each described system in the claim 1 to 4, it is characterized in that said scanning element (3) has at least one vibration mirror scanning device (3b), polygon scanner (3a) and/or MR scanner.
6. like each described system in the claim 1 to 5, it is characterized in that said scanning element (3) has the sweep limits that extends at least two substrates (8).
7. like each described system in the claim 1 to 6, it is characterized in that said system has at least one positioner that in the scanning area of said laser (1), is used for substrate (8) and/or at least one is used for the control device of said substrate (8).
8. the method for a doped substrate (8); Wherein, at least a dopant contact substrate surface (4), and through the said substrate surface of laser beam (2) localized heating (4); It is characterized in that; Fiber laser (1) produces the laser beam (2) with circular light area of beam, and scanning element (3) guides to said substrate surface (4) with said laser beam (2), and said fiber laser (1) emission wavelength is the light of 750nm to 3000nm.
9. method as claimed in claim 8 is characterized in that, said fiber laser (1) is as the successive eradiation of continuous-wave laser, and perhaps, said fiber laser (1) is as pulse laser, and pulse length is in the scope of 80ns to 10 μ s.
10. method as claimed in claim 9 is characterized in that, said fiber laser (1) is created in the pulse of the rectangular pulse waveform that does not have power peak in time-power diagram.
11., it is characterized in that laser doping is carried out under the fusion temperature that is lower than said substrate (8) like each described method in the claim 8 to 10.
12., it is characterized in that said method is used for the doping on the whole surface of substrate (8) like each described method in the claim 8 to 11.
13. like each described method in the claim 8 to 12, it is characterized in that, in the local finite zone of said substrate surface (4), reduce the translational speed of said scanning element (3).
14., it is characterized in that the said substrate surface of local melting (4) like each described method in the claim 8 to 10,12 or 13.
15., it is characterized in that a plurality of lasers (1) are the different spaces zone of the said substrate surface of radiation (4) simultaneously like each described method in the claim 8 to 14.
16., it is characterized in that use beam splitter (5) that at least one laser beam (2) is divided into laser part light beam (9), said laser part light beam (9) produces the local structure that limits simultaneously like each described method in the claim 8 to 15.
17., it is characterized in that said scanning element (3) makes said laser beam (2) go up along at least one direction in space, at least two substrates (8) and moves like each described method in the claim 8 to 16.
18. like each described method in the claim 8 to 17; It is characterized in that; During mixing, utilize vehicle (22) to support or transport said substrate (8), said vehicle (22) has the surface (23) of said laser beam (2) towards the direction reflected back of said substrate (8).
19. method as claimed in claim 18 is characterized in that, with the form of doped layer (19) on the said substrate surface (4) and the doped layer (20) on the substrate back (24) said dopant is provided.
CN2010800640879A 2009-12-17 2010-12-16 System and method for doping semiconductor materials Pending CN102763194A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009059193.1A DE102009059193B4 (en) 2009-12-17 2009-12-17 Process for doping semiconductor materials
DE102009059193.1 2009-12-17
PCT/IB2010/055871 WO2011073937A2 (en) 2009-12-17 2010-12-16 System and method for doping semiconductor materials

Publications (1)

Publication Number Publication Date
CN102763194A true CN102763194A (en) 2012-10-31

Family

ID=44167778

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800640879A Pending CN102763194A (en) 2009-12-17 2010-12-16 System and method for doping semiconductor materials

Country Status (5)

Country Link
KR (1) KR20120112586A (en)
CN (1) CN102763194A (en)
DE (1) DE102009059193B4 (en)
TW (1) TW201137952A (en)
WO (1) WO2011073937A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219421A (en) * 2013-03-27 2013-07-24 中国科学院上海光学精密机械研究所 Method for manufacturing vertical multi-junction solar cell piece by laser
CN110087816A (en) * 2016-11-09 2019-08-02 艾克斯特朗欧洲公司 Use the method and corresponding equipment of the crystal nucleation layer of laser beam preparation structure
CN111029648A (en) * 2019-12-26 2020-04-17 中国科学院过程工程研究所 Surface-doped all-solid-state electrolyte membrane, and preparation method and application thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011107605A1 (en) 2011-06-30 2013-01-03 Iai Industrial Systems B.V. Manufacture of monocrystalline or polycrystalline n-silicon-based solar cell involves applying boron-containing compound on silicon wafer, doping in presence of pulsed laser having specified wavelength, and forming boron-doped emitter
JP6028849B2 (en) * 2013-03-07 2016-11-24 三菱電機株式会社 Laser annealing apparatus and semiconductor device manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040097062A1 (en) * 2000-09-19 2004-05-20 Ralf Preu Method of producing a semiconductor-metal contact through a dielectric layer
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070296060A1 (en) * 2004-08-06 2007-12-27 Keiichiro Tanabe Method for Forming P-Type Semiconductor Region, and Semiconductor Element
CN101432853A (en) * 2006-05-24 2009-05-13 伊雷克托科学工业股份有限公司 Laser processing of workpieces containing low-K dielectric material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4309225A (en) 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
AU2003274671A1 (en) 2002-10-28 2004-05-13 Orbotech Ltd. Selectable area laser assisted processing of substrates
JP2005260040A (en) 2004-02-12 2005-09-22 Sony Corp Doping method, method for manufacturing semiconductor device and electronic application device
DE102004036220B4 (en) 2004-07-26 2009-04-02 Jürgen H. Werner Method for laser doping of solids with a line-focused laser beam
US7700463B2 (en) 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2007148476A1 (en) 2006-06-21 2007-12-27 Hightec Systems Corporation Semiconductor heat treatment method
DE102007035068A1 (en) 2007-07-26 2009-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for manufacturing silicon solar cell with selective emitter, involves producing laminar emitter at emitter surface of solar cell substrate and applying corroding barrier on sub ranges of emitter surface
US20090120924A1 (en) 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
WO2009087784A1 (en) 2008-01-07 2009-07-16 Ihi Corporation Laser anneal method and device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040097062A1 (en) * 2000-09-19 2004-05-20 Ralf Preu Method of producing a semiconductor-metal contact through a dielectric layer
US20070296060A1 (en) * 2004-08-06 2007-12-27 Keiichiro Tanabe Method for Forming P-Type Semiconductor Region, and Semiconductor Element
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101432853A (en) * 2006-05-24 2009-05-13 伊雷克托科学工业股份有限公司 Laser processing of workpieces containing low-K dielectric material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103219421A (en) * 2013-03-27 2013-07-24 中国科学院上海光学精密机械研究所 Method for manufacturing vertical multi-junction solar cell piece by laser
CN103219421B (en) * 2013-03-27 2015-05-13 中国科学院上海光学精密机械研究所 Method for manufacturing vertical multi-junction solar cell piece by laser
CN110087816A (en) * 2016-11-09 2019-08-02 艾克斯特朗欧洲公司 Use the method and corresponding equipment of the crystal nucleation layer of laser beam preparation structure
CN110087816B (en) * 2016-11-09 2021-12-21 艾克斯特朗欧洲公司 Method for producing a structured seed layer using a laser beam and corresponding device
CN111029648A (en) * 2019-12-26 2020-04-17 中国科学院过程工程研究所 Surface-doped all-solid-state electrolyte membrane, and preparation method and application thereof

Also Published As

Publication number Publication date
DE102009059193A1 (en) 2011-06-22
TW201137952A (en) 2011-11-01
WO2011073937A9 (en) 2012-10-11
DE102009059193B4 (en) 2024-02-15
KR20120112586A (en) 2012-10-11
WO2011073937A2 (en) 2011-06-23
WO2011073937A3 (en) 2012-01-05

Similar Documents

Publication Publication Date Title
CN101160646B (en) Dual wavelength thermal flux laser anneal
US11224937B2 (en) Line beam light source, line beam irradiation device, and laser lift off method
CN102763194A (en) System and method for doping semiconductor materials
US10370762B2 (en) Apparatus and methods for photo-excitation processes
CN103567630A (en) Laminated-substrate processing method and processing apparatus
US20120111838A1 (en) Thermal Processing of Substrates with Pre- and Post-Spike Temperature Contro
EP1500484A1 (en) Method and system for machining fragile material
CN102484051A (en) Photovoltaic device structure and method
US8637382B2 (en) Layer transfer of films utilizing thermal flux regime for energy controlled cleaving
US20120145229A1 (en) Irradiating A Plate Using Multiple Co-Located Radiation Sources
US20140008338A1 (en) Laser dicing method
CN101515610A (en) Solar module patterning apparatus.
CN102139484A (en) Laser scribing method and device
JP5517832B2 (en) Laser annealing apparatus and laser annealing method
JP2007076077A (en) Laser beam cutting method for fully cutting brittle material and apparatus for the method
US20120074117A1 (en) In-situ heating and co-annealing for laser annealed junction formation
CN102728955A (en) Method and apparatus to scribe thin film layers of cadium telluride solar cells
Gebhardt et al. Laser contact opening of high efficient Solar cells: on the fly laser processing of PERC solar cells
WO2014203240A1 (en) Kerf-free ingot wafering
CN103762158B (en) Utilize the method that laser micro-area plasma induces quantum well mixed
CN117790625B (en) Method for metallizing and sintering solar cell and processing device thereof
TW201037761A (en) Irradiating a plate using multiple co-located radiation sources

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: ROTH + RAU SOLUTIONS CO., LTD.

Free format text: FORMER OWNER: ROTH + RAU AG

Effective date: 20140425

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20140425

Address after: German Crellin

Applicant after: Adams inola solutions Limited by Share Ltd

Address before: German Crellin

Applicant before: Roth & Rau AG

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20121031