CN102760181A - Method and device for calculating degree of accuracy of electromagnetic transient simulation result - Google Patents

Abstract

The invention discloses a method and device for calculating a degree of accuracy of an electromagnetic transient simulation result, relating to the technical field of time domain simulation of a power system. The method comprises the steps of: setting at least two different to-be-measured simulation step lengths and respectively performing electromagnetic transient simulation on a current power system so as to obtain corresponding to-be-measured simulation results; regarding a common divisor of the to-be-measured simulation step length as a reference simulation step length and performing electromagnetic transient simulation on the current power system to obtain a corresponding reference simulation result; and calculating degrees of accuracy respectively corresponding to the to-be-measured stimulation step length by utilizing the to-be-measured stimulation results, the reference stimulation result and the to-be-measured simulation step lengths. As the common divisor of the to-be-measured simulation step lengths is regarded as the reference stimulation step length and the degrees of accuracy corresponding to the to-be-measured stimulation step lengths are calculated through the reference stimulation step length, the method for calculating a degree of accuracy of an electromagnetic transient simulation result, disclosed by the invention, has the advantage of realizing accurate calculation of degrees of accuracy of electromagnetic transient simulation results of different stimulation step lengths.

Description

Electromagnetic transient simulation result's accuracy computing method and device

Technical field

The present invention relates to electric system time-domain-simulation technical field, particularly a kind of electromagnetic transient simulation result's accuracy computing method and device.

Background technology

There is the different element of dynamic process time scale in the electric system, like dynamic process element such as the relatively slow generator of power electronic equipment and dynamic process, motor faster.For the dynamic process of this type systematic of accurate description, often need adopt detailed modeling electromagnetic transient simulation to realize.

Typical case's representative that electro-magnetic transient calculates is the EMTP method, belongs to the category of direct method.The ultimate principle of this method is to convert the differential equation of each dynamic element in the system into describe this element Norton equivalent circuit algebraic equation through differencing, further, obtains separating of original system through finding the solution the equivalent network that the Norton equivalent circuit constitutes.The transformational relation of original system and equivalent system is shown in accompanying drawing 1.Through conversion, the dynamic process of original system can use the Algebraic Equation set shown in the formula (1) to describe, and through the formula of finding the solution (1) in each discrete moment point, can obtain the time-domain-simulation result of original system.

YU＝I （1）

Wherein, Y is the bus admittance matrix of system, and U is the node voltage vector, and I is a node injection current vector.

In the EMTP method, simulation step length is the key factor that influences emulation accuracy and simulation efficiency.Generally speaking, for the total duration of given emulation, simulation step length is big more, and simulation velocity is fast more, and the emulation accuracy is low more.Under the situation that guarantees certain accuracy, increase simulation step length as much as possible, be the important means that improves simulation efficiency.

Because the result of electromagnetic transient simulation is an instantaneous value; And in most cases be non-standard first-harmonic sinusoidal signal; Be difficult to adopt the amplitude of routine or the accuracy that phase place is calculated simulation result; And based on the accuracy computing method of instantaneous value, as with the instantaneous value maximum error as the accuracy index, calculating the problem that has following two aspects aspect the accuracy of different step-length simulation result:

1) electromagnetic transient simulation of different simulation step length is because the moment point of finding the solution is different, and simulation result does not have one-to-one relationship, can't calculate the instantaneous value maximum error;

2) electromagnetic transient simulation of different simulation step length is often bigger in the phantom error of initial time point; But this error can decay along with the increase of simulation time; Influence to steady-state error is less; If adopt the instantaneous value maximum error, then be difficult to the accuracy of emulation under the different step-lengths of objective evaluation as the accuracy index.

Summary of the invention

The technical matters that (one) will solve

The technical matters that the present invention will solve is: the how electromagnetic transient simulation result's of the different simulation step length of accurate Calculation accuracy.

(2) technical scheme

For solving the problems of the technologies described above, the invention provides a kind of electromagnetic transient simulation result's accuracy computing method, said method comprises:

At least two different simulation step length to be measured are set respectively the current power system are carried out electromagnetic transient simulation, obtain corresponding simulation result to be measured;

The common divisor of said simulation step length to be measured as the benchmark simulation step length, is carried out electromagnetic transient simulation to said current power system, obtain corresponding benchmark simulation result;

Utilize said simulation result to be measured, benchmark simulation result and simulation step length to be measured to calculate the corresponding respectively accuracy of said simulation step length to be measured.

Preferably, calculating the corresponding respectively accuracy of said simulation step length to be measured specifically comprises:

S1: utilize i simulation step length to be measured that said benchmark simulation result is sampled;

S2: i the corresponding related coefficient of simulation step length to be measured between the corresponding simulation result to be measured of the benchmark simulation result behind the calculating sampling and i simulation step length to be measured, and related coefficient that will said i simulation step length correspondence to be measured is as the accuracy of the individual simulation step length correspondence to be measured of said i.

Preferably, sample through following formula among the step S1,

$U_{i0}(k,j)=U_0(k*\frac{h_i}{h_c}-1,j)$

Wherein, U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U ₀(x is that j node is vectorial at x node voltage constantly in the said benchmark simulation result j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, h _cBe the benchmark simulation step length,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

Preferably, among the step S2 through the related coefficient between the simulation result to be measured corresponding of the benchmark simulation result after the computes sampling with the individual simulation step length to be measured of i,

$r_{\mathrm{ij}}=\frac{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)U_i(k,j)-\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)}{\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\right)}^2}\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)\right)}^2}}$

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U _i(k is that j node is vectorial at k node voltage constantly in the corresponding simulation result to be measured of the individual simulation step length to be measured of said i j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

Preferably, among the step S2 through following formula with said related coefficient as the corresponding accuracy of said i simulation step length to be measured,

r _i＝min({r _ij})

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), r _iBe said i the accuracy that simulation step length to be measured is corresponding, min () is for getting minimum operation.

The invention also discloses a kind of electromagnetic transient simulation result's accuracy calculation element, said device comprises:

Emulation module to be measured is used to be provided with at least two different simulation step length to be measured and respectively the current power system is carried out electromagnetic transient simulation, obtains corresponding simulation result to be measured;

The benchmark emulation module is used for common divisor with said simulation step length to be measured as the benchmark simulation step length, and said current power system is carried out electromagnetic transient simulation, obtains corresponding benchmark simulation result;

The accuracy computing module is used to utilize said simulation result to be measured, benchmark simulation result and simulation step length to be measured to calculate the corresponding respectively accuracy of said simulation step length to be measured.

Preferably, said accuracy computing module specifically comprises:

The sampling submodule is used to utilize i simulation step length to be measured that said benchmark simulation result is sampled;

Calculating sub module; Be used for i the corresponding related coefficient of simulation step length to be measured between benchmark simulation result behind the calculating sampling simulation result to be measured corresponding, and related coefficient that will said i simulation step length correspondence to be measured is as the accuracy of the individual simulation step length correspondence to be measured of said i with i simulation step length to be measured.

Preferably, sample through following formula in the sampling submodule,

$U_{i0}(k,j)=U_0(k*\frac{h_i}{h_c}-1,j)$

Wherein, U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U ₀(x is that j node is vectorial at x node voltage constantly in the said benchmark simulation result j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, h _cBe the benchmark simulation step length,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

Preferably, in the calculating sub module through the related coefficient between the simulation result to be measured corresponding of the benchmark simulation result after the computes sampling with the individual simulation step length to be measured of i,

$r_{\mathrm{ij}}=\frac{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)U_i(k,j)-\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)}{\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\right)}^2}\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)\right)}^2}}$

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U _i(k is that j node is vectorial at k node voltage constantly in the corresponding simulation result to be measured of the individual simulation step length to be measured of said i j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, T is emulation T.T., and floor () is for to round downwards the value in the bracket

Preferably, in the calculating sub module through following formula with said related coefficient as the corresponding accuracy of said i simulation step length to be measured,

r _i＝min({r _ij})

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), r _iBe said i the accuracy that simulation step length to be measured is corresponding, min () is for getting minimum operation.

(3) beneficial effect

The present invention as the benchmark simulation step length, and calculates the corresponding accuracy of simulation step length to be measured through said benchmark simulation step length with the common divisor of simulation step length to be measured, has realized the electromagnetic transient simulation result's of the different simulation step length of accurate Calculation accuracy.

Description of drawings

Fig. 1 is the transformational relation synoptic diagram of a ball bearing made using and equivalent system thereof;

Fig. 2 is the process flow diagram according to the electromagnetic transient simulation result's of one embodiment of the present invention accuracy computing method;

Fig. 3 is the structured flowchart according to the electromagnetic transient simulation result's of one embodiment of the present invention accuracy calculation element;

Fig. 4 is the system schematic of test usefulness;

Fig. 5 is a simulation waveform comparison diagram under first group of test parameter;

Fig. 6 is a simulation waveform comparison diagram under second group of test parameter;

Fig. 7 is a simulation waveform comparison diagram under the 3rd group of test parameter;

Fig. 8 is a simulation waveform comparison diagram under the 4th group of test parameter;

Fig. 9 is a simulation waveform comparison diagram under the 5th group of test parameter.

Embodiment

Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.

Fig. 2 is the process flow diagram according to the electromagnetic transient simulation result's of one embodiment of the present invention accuracy computing method; With reference to Fig. 2, said method comprises:

At least two different simulation step length to be measured are set respectively the current power system are carried out electromagnetic transient simulation, obtain corresponding simulation result to be measured;

With the common divisor of said simulation step length to be measured as the benchmark simulation step length (in the present embodiment; The greatest common divisor of preferred said simulation step length to be measured is as the benchmark simulation step length); Said current power system is carried out electromagnetic transient simulation, obtain corresponding benchmark simulation result;

Utilize said simulation result to be measured, benchmark simulation result and simulation step length to be measured to calculate the corresponding respectively accuracy of said simulation step length to be measured.

Preferably, calculating the corresponding respectively accuracy of said simulation step length to be measured specifically comprises:

S1: utilize i simulation step length to be measured that said benchmark simulation result is sampled;

S2: i the corresponding related coefficient of simulation step length to be measured between the corresponding simulation result to be measured of the benchmark simulation result behind the calculating sampling and i simulation step length to be measured, and related coefficient that will said i simulation step length correspondence to be measured is as the accuracy of the individual simulation step length correspondence to be measured of said i.

Preferably, sample through following formula among the step S1,

$U_{i0}(k,j)=U_0(k*\frac{h_i}{h_c}-1,j)$

Wherein, U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U ₀(x is that j node is vectorial at x node voltage constantly in the said benchmark simulation result j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, h _cBe the benchmark simulation step length,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

Preferably, among the step S2 through the related coefficient between the simulation result to be measured corresponding of the benchmark simulation result after the computes sampling with the individual simulation step length to be measured of i,

$r_{\mathrm{ij}}=\frac{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)U_i(k,j)-\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)}{\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\right)}^2}\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)\right)}^2}}$

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U _i(k is that j node is vectorial at k node voltage constantly in the corresponding simulation result to be measured of the individual simulation step length to be measured of said i j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

Preferably, among the step S2 through following formula with said related coefficient as the corresponding accuracy of said i simulation step length to be measured,

r _i＝min({r _ij})

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), r _iBe said i the accuracy that simulation step length to be measured is corresponding, min () is for getting minimum operation.

Preferably, after calculating the corresponding respectively accuracy of said simulation step length to be measured, if accuracy is greater than certain threshold value r ₀, think that then this time simulation result is accurate, simulation step length is reasonable.

r _i＞r ₀，

In the formula, r ₀Value generally can be taken as 0.9999.

For making the result more directly perceived, also can be with U _iAnd U _I0The minimum row of middle related coefficient are plotted among same the figure, as the displaying directly perceived of accuracy assessment.

The accuracy of simulation result when method of the present invention can objective evaluation adopts different simulation step length is for improving simulation efficiency important foundation is provided through increasing simulation step length.

Fig. 3 is the structured flowchart according to the electromagnetic transient simulation result's of one embodiment of the present invention accuracy calculation element; With reference to Fig. 3, the invention also discloses a kind of electromagnetic transient simulation result's accuracy calculation element, said device comprises:

Emulation module to be measured is used to be provided with at least two different simulation step length to be measured and respectively the current power system is carried out electromagnetic transient simulation, obtains corresponding simulation result to be measured;

The benchmark emulation module is used for common divisor with said simulation step length to be measured as the benchmark simulation step length, and said current power system is carried out electromagnetic transient simulation, obtains corresponding benchmark simulation result;

The accuracy computing module is used to utilize said simulation result to be measured, benchmark simulation result and simulation step length to be measured to calculate the corresponding respectively accuracy of said simulation step length to be measured.

Preferably, said accuracy computing module specifically comprises:

The sampling submodule is used to utilize i simulation step length to be measured that said benchmark simulation result is sampled;

Calculating sub module; Be used for i the corresponding related coefficient of simulation step length to be measured between benchmark simulation result behind the calculating sampling simulation result to be measured corresponding, and related coefficient that will said i simulation step length correspondence to be measured is as the accuracy of the individual simulation step length correspondence to be measured of said i with i simulation step length to be measured.

Preferably, sample through following formula in the sampling submodule,

$U_{i0}(k,j)=U_0(k*\frac{h_i}{h_c}-1,j)$

Wherein, U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U ₀(x is that j node is vectorial at x node voltage constantly in the said benchmark simulation result j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, h _cBe the benchmark simulation step length,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

Preferably, in the calculating sub module through the related coefficient between the simulation result to be measured corresponding of the benchmark simulation result after the computes sampling with the individual simulation step length to be measured of i,

$r_{\mathrm{ij}}=\frac{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)U_i(k,j)-\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)}{\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\right)}^2}\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)\right)}^2}}$

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U _i(k is that j node is vectorial at k node voltage constantly in the corresponding simulation result to be measured of the individual simulation step length to be measured of said i j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, T is emulation T.T., and floor () is for to round downwards the value in the bracket

Preferably, in the calculating sub module through following formula with said related coefficient as the corresponding accuracy of said i simulation step length to be measured,

r _i＝min({r _ij})

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), r _iBe said i the accuracy that simulation step length to be measured is corresponding, min () is for getting minimum operation.

Embodiment

Present embodiment is used to verify the validity of method of the present invention, adopts electric system shown in Figure 4 to test.

5 emulation is carried out in electric system among Fig. 4, and the total duration of emulation is set to 0.1s.Be used to check the benchmark simulation result of correctness to come from business simulation software PSCAD, adopt the simulation step length of 50us to carry out emulation.The step-length and the least correlativing coefficient of each time emulation are as shown in table 1:

Step-length setting and accuracy result of calculation in five groups of emulation testings of table 1

Test No.	Simulation step length	r i
			1	50us	0.999999999999993
2	200us	0.999995881588799
			3	500us	0.999962276778345
4	1000us	0.999809117280526
			5	1500us	0.999499601952308

From table, can find out that r is satisfied in the first three groups emulation testing _i＞0.9999, then two groups are not satisfied this condition.

The waveform that error in five groups of emulation testings is maximum is put together with the PSCAD simulation result respectively and is compared, shown in Fig. 5 ~ 9.

Can find out the result of first three groups emulation testing and business software PSCAD basically identical from the comparison of simulation waveform; Then the resultant error of two groups of emulation testings is comparatively obvious, and this conclusion that data draw from table 1 is consistent, has verified the validity of method of the present invention.

Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.

Claims (10)

1. an electromagnetic transient simulation result accuracy computing method is characterized in that, said method comprises:

At least two different simulation step length to be measured are set respectively the current power system are carried out electromagnetic transient simulation, obtain corresponding simulation result to be measured;

The common divisor of said simulation step length to be measured as the benchmark simulation step length, is carried out electromagnetic transient simulation to said current power system, obtain corresponding benchmark simulation result;

Utilize said simulation result to be measured, benchmark simulation result and simulation step length to be measured to calculate the corresponding respectively accuracy of said simulation step length to be measured.

2. the method for claim 1 is characterized in that, calculates the corresponding respectively accuracy of said simulation step length to be measured and specifically comprises:

S1: utilize i simulation step length to be measured that said benchmark simulation result is sampled;

S2: i the corresponding related coefficient of simulation step length to be measured between the corresponding simulation result to be measured of the benchmark simulation result behind the calculating sampling and i simulation step length to be measured, and related coefficient that will said i simulation step length correspondence to be measured is as the accuracy of the individual simulation step length correspondence to be measured of said i.

3. method as claimed in claim 2 is characterized in that, samples through following formula among the step S1,

$U_{i0}(k,j)=U_0(k*\frac{h_i}{h_c}-1,j)$

Wherein, U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U ₀(x is that j node is vectorial at x node voltage constantly in the said benchmark simulation result j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, h _cBe the benchmark simulation step length,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

4. method as claimed in claim 2 is characterized in that, among the step S2 through the related coefficient between the simulation result to be measured corresponding of the benchmark simulation result after the computes sampling with the individual simulation step length to be measured of i,

$r_{\mathrm{ij}}=\frac{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)U_i(k,j)-\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)}{\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\right)}^2}\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)\right)}^2}}$

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U _i(k is that j node is vectorial at k node voltage constantly in the corresponding simulation result to be measured of the individual simulation step length to be measured of said i j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

5. method as claimed in claim 4 is characterized in that, among the step S2 through following formula with said related coefficient as the corresponding accuracy of said i simulation step length to be measured,

r _i＝min({r _ij})

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), r _iBe said i the accuracy that simulation step length to be measured is corresponding, min () is for getting minimum operation.

6. an electromagnetic transient simulation result accuracy calculation element is characterized in that, said device comprises:

Emulation module to be measured is used to be provided with at least two different simulation step length to be measured and respectively the current power system is carried out electromagnetic transient simulation, obtains corresponding simulation result to be measured;

The benchmark emulation module is used for common divisor with said simulation step length to be measured as the benchmark simulation step length, and said current power system is carried out electromagnetic transient simulation, obtains corresponding benchmark simulation result;

The accuracy computing module is used to utilize said simulation result to be measured, benchmark simulation result and simulation step length to be measured to calculate the corresponding respectively accuracy of said simulation step length to be measured.

7. device as claimed in claim 6 is characterized in that, said accuracy computing module specifically comprises:

The sampling submodule is used to utilize i simulation step length to be measured that said benchmark simulation result is sampled;

Calculating sub module; Be used for i the corresponding related coefficient of simulation step length to be measured between benchmark simulation result behind the calculating sampling simulation result to be measured corresponding, and related coefficient that will said i simulation step length correspondence to be measured is as the accuracy of the individual simulation step length correspondence to be measured of said i with i simulation step length to be measured.

8. device as claimed in claim 7 is characterized in that, samples through following formula in the sampling submodule,

$U_{i0}(k,j)=U_0(k*\frac{h_i}{h_c}-1,j)$

Wherein, U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U ₀(x is that j node is vectorial at x node voltage constantly in the said benchmark simulation result j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured, h _cBe the benchmark simulation step length,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

9. device as claimed in claim 7 is characterized in that, in the calculating sub module through the related coefficient between the simulation result to be measured corresponding of the benchmark simulation result after the computes sampling with the individual simulation step length to be measured of i,

$r_{\mathrm{ij}}=\frac{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)U_i(k,j)-\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)}{\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_{i0}(k,j)\right)}^2}\sqrt{L_i\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i{(k,j)}^2-{\left(\underset{k=1}{\overset{L_i}{\mathrm{\Σ}}}{U}_i(k,j)\right)}^2}}$

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), U _I0(k is that j node is vectorial at the node voltage of k sampling instant in the said benchmark simulation result j), U _i(k is that j node is vectorial at k node voltage constantly in the corresponding simulation result to be measured of the individual simulation step length to be measured of said i j), k=1, and 2 ..., L _i, h _iBe i simulation step length to be measured,

T is emulation T.T., and floor () is for to round downwards the value in the bracket.

10. device as claimed in claim 9 is characterized in that, in the calculating sub module through following formula with said related coefficient as the corresponding accuracy of said i simulation step length to be measured,

r _i＝min({r _ij})

Wherein, r _IjBe U _I0(k, j) and U _i(k, the related coefficient between j), r _iBe said i the accuracy that simulation step length to be measured is corresponding, min () is for getting minimum operation.

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