CN102757225B - A kind of oxide compound is in conjunction with the preparation method of silicon nitride goods - Google Patents
A kind of oxide compound is in conjunction with the preparation method of silicon nitride goods Download PDFInfo
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- CN102757225B CN102757225B CN201210000059.1A CN201210000059A CN102757225B CN 102757225 B CN102757225 B CN 102757225B CN 201210000059 A CN201210000059 A CN 201210000059A CN 102757225 B CN102757225 B CN 102757225B
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Abstract
Oxide compound disclosed by the invention is in conjunction with the preparation method of silicon nitride goods, be referred from the production technology of oxide combined silicon carbide goods, add the oxide compound easily producing liquid phase in silicon nitride, at high temperature silicon nitride is made to reach sintering by producing liquid phase, specifically comprise the following steps: a), prepare burden, Si
3n
4, 70 ~ 80wt%, oxide compound, 20 ~ 30wt%, additionally account for Si
3n
4with the bonding agent of oxide weight 3 ~ 5%; B), batch mixing, c), shaping, d), dry, e), burn till; In conjunction with the preparation technology of silicon nitride ceramics, oxide compound of the present invention has the advantages that production process is simple, production equipment is simple, production efficiency is high.
Description
Technical field
The present invention relates to silicon nitride ceramics technical field, specifically relate to the preparation method of a kind of oxide compound in conjunction with silicon nitride goods.
Background technology
Silicon nitride (Si
3n
4) in Si and N between with strong covalent bonds, so fusing point is high, hardness is high, intensity is high, Stability Analysis of Structures.Silicon nitride belongs to high temperature refractory compound, and has the advantages such as hot strength is high, high temperature, erosion resistant is strong, thermal expansivity is low, good heat conductivity, is a kind of very excellent high temperature ceramic material.
Silicon nitride can distil decomposition usually more than 1900 DEG C, can not produce liquid phase, be difficult to sinter goods into, and therefore people usually add sintering aid in silicon nitride and sinter silicon nitride.However, also need to apply special means and just can sinter silicon nitride ceramics into, as reaction sintering, hot pressed sintering, pressure sintering, atmosphere protection etc.In short, be exactly that silicon nitride only just can reach good sintering under high temperature (more than 1800 DEG C) and condition of high voltage.
Summary of the invention
Technical problem to be solved by this invention be to provide a kind of production process simple, produce equipment is simple, production efficiency the is high oxide compound preparation method in conjunction with silicon nitride goods,
Oxide compound of the present invention, in conjunction with the preparation method of silicon nitride goods, is referred from the production technology of oxide combined silicon carbide goods, adds the oxide compound easily producing liquid phase in silicon nitride, at high temperature makes silicon nitride reach sintering by producing liquid phase.Specifically comprise the following steps:
A), prepare burden
Raw material and proportioning (weight percent) as follows:
Si
3N
470~80%
Oxide compound 20 ~ 30%
Additionally account for Si
3n
4with the bonding agent of oxide weight 3 ~ 5%;
Wherein, oxide compound is any one of fine silica powder, clay powder or mullite powder;
B), batch mixing
By even in stirrer for mixing for the raw material of said ratio;
C), shaping
By obtained compound compression moulding on a hydraulic press, forming pressure is 100 ~ 120MPa;
D), dry
The base substrate of compacting is dry through 80 ~ 100 DEG C × 6 ~ 10 hours in loft drier;
E), burn till
The base substrate of drying is loaded in high temperature kiln, through 1350 ~ 1450 DEG C of sintering, is incubated 6 ~ 10 hours.
Further, described Si
3n
4for silicon nitride content be 95 ~ 98%, granularity is less than 325 object silicon nitride powders.
Further, described fine silica powder granularity is less than 3000 orders.
Further, described clay powder granularity is less than 325 orders.
Further, described mullite powder granularity is less than 325 orders.
Further, described bonding agent be water glass, silicon sol, spent pulping liquor any one.
Oxide compound of the present invention has following characteristics in conjunction with the preparation technology of silicon nitride ceramics:
1) oxide compound, added is not strict with the performance such as chemical purity, particle fineness;
2), shaping can by the forming method of ordinary pottery products;
3) firing temperature is below 1450 DEG C;
4) normal pressure-sintered, do not need special burning apparatus;
5) atmosphere protection is not needed.
It should be noted that, although oxide compound prepared by the present invention is unexcellent like that with the silicon nitride goods of any special measures sintering in conjunction with the physicochemical property of silicon nitride ceramics, mechanical behavior under high temperature and high temperature thermal property, but production process is simple, production equipment is simple, highly efficient in productivity, makes production cost very low.Therefore there are wide field of applying and market outlook.
Embodiment
A), prepare burden; Raw material and proportioning are in table 1.
Table 1
B), mix: by table 1 proportioning, raw material is even in stirrer for mixing.
C), shaping: loaded by compound in wooden model or metal die and be molded into base substrate on vibrations pressing machine, forming pressure is in table 2.
D), dry: molding blank is put into loft drier or the drying of dry road, drying temperature is in table 2.
E), burn till: loaded in high temperature kiln by the base substrate of drying and sinter, sintering temperature is in table 2.
Table 2
The performance index of prepared mullite light-weight insulating brick are in table 3.
Table 3
Claims (5)
1. oxide compound is in conjunction with a preparation method for silicon nitride goods, it is characterized in that: specifically comprise the following steps: a), prepare burden
Raw material and proportioning (weight percent) as follows:
Si
3N
470~80%
Oxide compound 20 ~ 30%
Additionally account for Si
3n
4with the bonding agent of oxide weight 3 ~ 5%;
Wherein, oxide compound is any one of fine silica powder, clay powder or mullite powder;
Described Si
3n
4for silicon nitride content be 95 ~ 98%, granularity is less than 325 object silicon nitride powders;
B), batch mixing
By even in stirrer for mixing for the raw material of said ratio;
C), shaping
By obtained compound compression moulding on a hydraulic press, forming pressure is 100 ~ 120MPa;
D), dry
The base substrate of compacting is dry through 80 ~ 100 DEG C × 6 ~ 10 hours in loft drier;
E), burn till
The base substrate of drying is loaded in high temperature kiln, through 1350 ~ 1450 DEG C of sintering, is incubated 6 ~ 10 hours.
2. oxide compound according to claim 1 is in conjunction with the preparation method of silicon nitride goods, it is characterized in that: described fine silica powder granularity is less than 3000 orders.
3. oxide compound according to claim 1 is in conjunction with the preparation method of silicon nitride goods, it is characterized in that: described clay powder granularity is less than 325 orders.
4. oxide compound according to claim 1 is in conjunction with the preparation method of silicon nitride goods, it is characterized in that: described mullite powder granularity is less than 325 orders.
5. oxide compound according to claim 1 is in conjunction with the preparation method of silicon nitride goods, it is characterized in that: described bonding agent be water glass, silicon sol, spent pulping liquor any one.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210000059.1A CN102757225B (en) | 2012-01-01 | 2012-01-01 | A kind of oxide compound is in conjunction with the preparation method of silicon nitride goods |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210000059.1A CN102757225B (en) | 2012-01-01 | 2012-01-01 | A kind of oxide compound is in conjunction with the preparation method of silicon nitride goods |
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| Publication Number | Publication Date |
|---|---|
| CN102757225A CN102757225A (en) | 2012-10-31 |
| CN102757225B true CN102757225B (en) | 2015-08-12 |
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|---|---|---|---|
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104496483B (en) * | 2014-11-28 | 2016-06-01 | 吴江佳亿电子科技有限公司 | A kind of high temperature ceramic material and its preparation method |
| CN113354420B (en) * | 2021-07-01 | 2022-11-08 | 湖南省新化县鑫星电子陶瓷有限责任公司 | Silicon nitride-based ceramic welding sealing component and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101381241A (en) * | 2008-10-16 | 2009-03-11 | 武汉科技大学 | Porous breathable refractory materials for upper nozzle and production method thereof |
| CN101955359A (en) * | 2009-07-13 | 2011-01-26 | 航天材料及工艺研究所 | Method for preparing porous silicon nitride wave transmitting ceramic with low dielectric constant and high strength |
-
2012
- 2012-01-01 CN CN201210000059.1A patent/CN102757225B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101381241A (en) * | 2008-10-16 | 2009-03-11 | 武汉科技大学 | Porous breathable refractory materials for upper nozzle and production method thereof |
| CN101955359A (en) * | 2009-07-13 | 2011-01-26 | 航天材料及工艺研究所 | Method for preparing porous silicon nitride wave transmitting ceramic with low dielectric constant and high strength |
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| CN102757225A (en) | 2012-10-31 |
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Effective date of registration: 20200629 Address after: Weisi Road, industrial cluster district, Yichuan County, Luoyang City, Henan Province Patentee after: LUOYANG BEIYUAN NEW MATERIAL TECHNOLOGY Co.,Ltd. Address before: 471039 Henan Province, Luoyang city high tech Development Zone, Sun Xin Road South Patentee before: LUOYANG BEIYUAN SPECIAL CERAMICS Co.,Ltd. |
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