CN102752559B - High-dynamic range image sensing circuit and high-dynamic range image reading method - Google Patents
High-dynamic range image sensing circuit and high-dynamic range image reading method Download PDFInfo
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- CN102752559B CN102752559B CN201110098189.9A CN201110098189A CN102752559B CN 102752559 B CN102752559 B CN 102752559B CN 201110098189 A CN201110098189 A CN 201110098189A CN 102752559 B CN102752559 B CN 102752559B
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Abstract
The invention provides a high-dynamic range image sensing circuit with adaptive conversion gain and a high-dynamic range image reading method. The high-dynamic range image sensing circuit comprises a variable capacitor. The capacitance value of the variable capacitor is adjusted according to sensed lightness or internal feedback control so as to adaptively adjust the conversion gain when a signal representing a pixel image sensed by an image sensing element is read. When signals are read per period, the signals within different dynamic ranges can be respectively read for more than two times so as to enhance the accuracy of the signals.
Description
Technical field
The present invention relates to a kind of high dynamic-range image sensing circuit and high dynamic-range image read method, refer to that a kind of adjustment variable capacitance that utilizes reads high dynamic-range image sensing circuit and the high dynamic-range image read method of conversion gain with accommodation image especially.
Background technology
Fig. 1 shows United States Patent (USP) the 7th, a kind of high dynamic-range image sensing element circuit diagram disclosed in 075, No. 049.As shown in Figure 1, high dynamic-range image sensing element is compared to traditional four transistors (4T) Image Sensor, increase a dual conversion gain transistor (dualconversion gain transistor, DCGT) with electric capacity CA, in order to switch the conversion gain of reading signal.Fig. 2 A and 2B, and Fig. 2 C and 2D, be shown in Fig. 1, high dynamic-range image sensing element under low-light level and high brightness, the accurate schematic diagram in position of each node, and describe high dynamic-range image sensing element operate time sense charge transfer.
Under low-light level environment, as shown in Fig. 2 A and 2B, the sense charge that light sensing unit pd produces is less, and the electric capacity of floating diffusion nodes (floating diffusion node) fd is fixed, by not conducting DCGT, make integral capacitor less, thus conversion gain is comparatively large, as accurate in the floating diffusion charge position in Fig. 2 B illustrates.Otherwise under high-brightness environment, as shown in Fig. 2 C and 2D, the sense charge that light sensing unit pd produces is more, by conducting DCGT, make integral capacitor comparatively large, thus conversion gain is less, as accurate in the floating diffusion charge position in Fig. 2 D illustrates.Thus aforementioned two signals can be synthesized after treatment the image of high dynamic range.
The shortcoming of this prior art is, conversion gain is two kinds of fixing selections, and that is high-conversion-gain and low conversion gain are all fixing.
In addition, the U.S. the 7th, 518, a kind of high dynamic-range image sensing element disclosed in No. 143 Patent Cases, although can conversion gain be adjusted, must on transfering transistor TG, apply three sections of voltages, and second segment voltage be adopt sense charge the voltage accumulating out.
In view of this, the present invention, namely for above-mentioned the deficiencies in the prior art, proposes a kind of adjustment variable capacitance that utilizes and reads high dynamic-range image sensing circuit and the high dynamic-range image read method of conversion gain with accommodation image.
Summary of the invention
One of the object of the invention is to overcome the deficiencies in the prior art and defect, proposes a kind of high dynamic-range image sensing circuit.
Another object of the present invention is, proposes a kind of high dynamic-range image sensing element.
Another object of the present invention is, proposes a kind of high dynamic-range image transducer.
Still a further object of the present invention is, proposes a kind of high dynamic-range image read method.
For reaching above object, with regard to one of them viewpoint, the invention provides a kind of high dynamic-range image sensing circuit, comprise: an Image Sensor is formed at one first conduction type substrate, comprise: a light sensing unit, in order to receive light signal to produce and to store sense charge; One floating diffusion nodes, in order to store floating diffusion charge; One transfer diverter switch, is coupled between this light sensing unit and this floating diffusion nodes, to be transferred to this sense charge of small part for this floating diffusion charge; At least one variable capacitance, receives an adjustment voltage to adjust the capacitance of this variable capacitance; And a dual conversion gain diverter switch, be coupled between this floating diffusion nodes and this variable capacitance, and receive a conversion gain signal, to determine whether be electrically connected this floating diffusion nodes and this variable capacitance according to this conversion gain signal, to change gain when this floating diffusion charge reads; And a signal reading circuit, couple with this Image Sensor, so that this floating diffusion charge is converted to a signal, represent the pixel image that this Image Sensor senses.
With regard to another viewpoint, the invention provides a kind of high dynamic-range image sensing element, comprise: a light sensing unit, in order to receive light signal to produce and to store sense charge; One floating diffusion nodes, in order to store floating diffusion charge; One transfer diverter switch, is coupled between this light sensing unit and this floating diffusion nodes, to be transferred to this sense charge of small part for this floating diffusion charge; At least one variable capacitance, receives an adjustment voltage to adjust this variable capacitance; And a dual conversion gain diverter switch, be coupled between this floating diffusion nodes and this variable capacitance, and receive a conversion gain signal, to determine whether be electrically connected this floating diffusion nodes and this variable capacitance according to this conversion gain signal, to change gain when this floating diffusion charge reads.
With regard to another viewpoint, the invention provides a kind of high dynamic-range image transducer, comprise: an Image Sensor matrix, comprise: multiple Image Sensor, be arranged as multiple row and multiple row, this Image Sensor comprises: a light sensing unit, in order to receive light signal to produce and to store sense charge; One floating diffusion nodes, in order to store floating diffusion charge; One transfer diverter switch, is coupled between this light sensing unit and this floating diffusion nodes, to be transferred to this sense charge of small part for this floating diffusion charge; At least one variable capacitance, receives an adjustment voltage to adjust the capacitance of this variable capacitance; And a dual conversion gain diverter switch, be coupled between this floating diffusion nodes and this variable capacitance, and receive a conversion gain signal, to determine whether be electrically connected this floating diffusion nodes and this variable capacitance according to this conversion gain signal, to change gain when this floating diffusion charge reads; And a signal reading circuit, couple with this Image Sensor, so that this floating diffusion charge is converted to a signal, represent the pixel image that this Image Sensor senses; One simulation is to digital conversion circuit, and couple with this signal reading circuit, it receives and changes this signal into a digitized video signal; And an image-processing circuit, couple to digital conversion circuit with this simulation, to process this signal.
In an embodiment of above high dynamic-range image transducer, this image-processing circuit is feedback and is controlled this conversion gain signal maybe this adjustment voltage.In another embodiment, this high dynamic-range image transducer, more includes a detected light intensity decision circuitry, its detected light intensity and control this conversion gain signal maybe this adjustment voltage.
With regard to a viewpoint again, the invention provides a kind of high dynamic-range image read method, comprise: receive light signal to produce and to store sense charge; According to a transfer signal, being transferred to small part sense charge to floating diffusion nodes is a floating diffusion charge; According to a conversion gain signal, to determine whether this floating diffusion nodes is electrically connected to a variable capacitance, to change gain when this floating diffusion charge reads, wherein, this variable capacitance adjusts voltage to determine the capacitance of this variable capacitance according to one; Reading this floating diffusion charge is the first signal, represents the pixel image that this Image Sensor senses.
Above image sensing circuit, high dynamic-range image sensing element, image sensor, with image reading method in, this variable capacitance can comprise: be formed at the second conductivity type doped region in this first conduction type substrate; And at least one pole plate be formed in this first conduction type substrate, receive this adjustment voltage, to adjust the capacitance of this variable capacitance; Wherein, by the area of this adjustment voltage and this pole plate, to determine the capacitance of this variable capacitance, or by this pole plate, this second conductivity type doped region is divided into multiple region, and receive this adjustment voltage by this pole plate, make the plurality of region under bias state, form at least one and be electrically connected state, to adjust the capacitance of this variable capacitance.
Above image sensing circuit, high dynamic-range image sensing element, image sensor, with image reading method in, can read this floating diffusion charge is respectively the first signal and the second signal; Wherein, when the reading of this first signal and this second signal is electrically connected respectively at this floating diffusion nodes and this variable capacitance and is not connected for it.
Illustrate in detail below by specific embodiment, when the effect being easier to understand object of the present invention, technology contents, feature and reach.
Accompanying drawing explanation
Fig. 1 shows United States Patent (USP) the 7th, a kind of high dynamic-range image sensing element circuit diagram disclosed in 075, No. 049;
Fig. 2 A and 2B, and Fig. 2 C and 2D, be shown in Fig. 1, high dynamic-range image sensing element under low-light level and high brightness, the accurate schematic diagram in position of each node;
Fig. 3 A-3L shows first embodiment of the present invention;
Fig. 4 A-4B shows second embodiment of the present invention;
Fig. 5 A-5F shows the 3rd embodiment of the present invention;
Fig. 6 shows the 4th embodiment of the present invention;
Fig. 7 shows circuit system embodiment of the present invention;
Fig. 8 display can also separately establish a detected light intensity decision circuitry 74 to control adjustment conversion gain signal or adjustment voltage.
Symbol description in figure
10 Image Sensors
20 signal reading circuits
21 reset signal sampling and holding circuit
22 image signal sampling and holding circuits
71 Image Sensor matrixes
72 simulations are to digital conversion circuit
73 image-processing circuits
74 detected light intensity decision circuitry
C1, C2 electric capacity
CA variable capacitance
Cd diffusion capacitance
CR resets signal sampling/holding capacitor
CS1 first image signal sampling/holding capacitor
CS2 second image signal sampling/holding capacitor
DCGT dual conversion gain transistor
Fd floating diffusion nodes
Pd light detecting unit
RSEL column selection transistor
RST reset transistor SF source follower
SHR resets signal sampling transistor
SHS1 first image signal sampling transistor
SHS2 second image signal sampling transistor
TG transfering transistor
VC1 first adjusts voltage
VC2 second adjusts voltage
Vdd builtin voltage
Embodiment
Graphic in the present invention all belongs to signal, is mainly intended to represent the function relation between each device and each element, as shape, thickness and width then not according to scale.
Fig. 3 A-3L shows first embodiment of the present invention.High dynamic-range image sensing circuit comprises Image Sensor 10 and is formed at the first conduction type substrate, is for example and without limitation to P type semiconductor substrate, and signal reading circuit 20.Refer to Fig. 3 A, the circuit diagram of display the present embodiment, wherein, Image Sensor comprises: light sensing unit pd, is for example and without limitation to optical diode, photogate or optical conductor, in order to receive light signal to produce and to store sense charge; Floating diffusion nodes fd, in order to store floating diffusion charge; Transfer diverter switch, is transfering transistor TG in the present embodiment, is coupled between light sensing unit pd and floating diffusion nodes fd, to be transferred to small part sense charge for floating diffusion charge; Variable capacitance CA, adjusts capacitance such as but not limited to being coupled to adjustment voltage VC1 and VC2; Dual conversion gain diverter switch, be a dual conversion gain transistor DCGT in the present embodiment, be coupled between floating diffusion nodes fd and variable capacitance CA, and receive conversion gain signal, to determine whether be electrically connected floating diffusion nodes fd and variable capacitance CA, to change the gain of reading floating diffusion charge; Reset transistor RST, in the present embodiment, reset transistor RST and dual conversion gain transistor DCGT is parallel to floating diffusion nodes fd, and reset transistor RST is accurate to preset potential in order to the position resetting floating diffusion nodes fd, is for example and without limitation to builtin voltage Vdd; Source follower SF, is coupled to floating diffusion nodes fd, and so that floating diffusion charge is converted to signal, represent the pixel image that this Image Sensor senses, in the present embodiment, floating diffusion charge can present in the form of voltage in floating diffusion nodes fd; And column selection transistor RSEL, be coupled to source follower SF, column selection transistor RSEL is controlled by column selection signal, receives signal with this column selection transistor RSEL enable.
As shown in Figure 3A, high dynamic-range image sensing circuit also comprises signal reading circuit 20, comprise: reset signal sampling and holding circuit 21, have to reset signal sampling transistor SHR and reset signal and sample/holding capacitor CR, signal is reset with sampling and storage, wherein, reset signal produced by the position standard of the floating diffusion nodes fd after source follower SF conversion replacement; And image signal samples and holding circuit 22, such as but not limited to having: the first image signal sampling transistor SHS1 and the first image signal sample/holding capacitor CS1, in order to first time sampling and storage signal; And second image signal sampling transistor SHS2 and the second image signal sample/holding capacitor CS2, in order to second time sampling and store signal.
Refer to Fig. 3 B, the Image Sensor schematic top plan view of display Fig. 3 A on P type semiconductor substrate, variable capacitance CA is for example and without limitation to as shown in Figure 3 B, be included in the diffusion capacitance Cd that the N-type doped region in P type substrate is formed, and on P type substrate, electric capacity C1 and the C2 be respectively coupled to adjustment voltage VC1 and VC2, being formed by two-plate.Fig. 3 C and 3D is the cross-sectional schematic of the AA ' hatching line of Fig. 3 B, shows in Fig. 3 B respectively, the electric capacity connection status produced during different adjustment voltage VC1 and VC2, how to utilize adjustment voltage VC1 and VC2 to adjust variable capacitance CA to show the present embodiment.Fig. 3 C shows when adjustment voltage VC1 and VC2 does not apply a voltage to the situation that pole plate or the voltage that applies make not produce below pole plate N-type region, and the capacitance now produced in substrate below pole plate is zero, therefore the capacitance of variable capacitance CA is diffusion capacitance Cd.Fig. 3 D shows when adjustment voltage VC1 and VC2 applies appropriate voltage in pole plate to make to produce N-type region below pole plate, this makes the capacitance produced in substrate below pole plate be respectively C1 and C2, and the capacitance of variable capacitance CA become diffusion capacitance Cd, C1, with the summation of C2.Utilize different adjustment voltage VC1 and VC2, to adjust variable capacitance CA, when two gain conversions transistor DCGT conducting, floating diffusion nodes fd and variable capacitance CA can be electrically connected, to change the gain of reading floating diffusion charge.
Refer to Fig. 3 E, show in first embodiment, a kind of signal schematic diagram of read method of high dynamic-range image.In the present embodiment, first reset transistor RST resets accurate extremely default position, the position standard of floating diffusion nodes, such as, be builtin voltage Vdd; Signal sampling transistor SHR conducting will be reset, with make replacement signal sampling/holding capacitor CR can receive builtin voltage Vdd using as replacement signal.Then transfering transistor TG is according to transfer signal, and being transferred to small part sense charge to floating diffusion nodes fd is floating diffusion charge; Wherein, sense charge is for being received by light sensing unit pd after light signal to produce and to be stored in light sensing unit pd.Then according to conversion gain signal, to determine whether floating diffusion nodes fd is electrically connected to variable capacitance CA.In illustrated example, for example, conversion gain signal determines dual conversion gain transistor DCGT conducting, the gain of reading floating diffusion charge is changed so that floating diffusion nodes fd is electrically connected to variable capacitance CA, wherein, variable capacitance CA determines the capacitance of variable capacitance CA according to adjustment voltage VC1 and VC2; As shown in FIG., when VC1 and VC2 is the various combination of 0 or 1, the capacitance of variable capacitance CA can be the result that Cd, Cd+C1, Cd+C2 or Cd+C1+C2 etc. are different.When image signal sampling with holding circuit 22 in the first image signal sampling transistor SHS1 conducting time, just can read floating diffusion charge is signal, stored in the first image signal sampling/holding capacitor CS1.
Fig. 3 F-3L shows in the first embodiment, when conversion gain signal determines dual conversion gain transistor DCGT conducting or not conducting, and adjustment voltage VC1 and VC2 is when being the various combination of 0 or 1, the accurate schematic diagram in position of each node, and show electric charge, position standard and capacitance relation, wherein transverse axis represents position, and the longitudinal axis represents voltage level.Fig. 3 F display light sensing cell pd receives the light signal of anticipating as the dotted line arrows, produces and stores sense charge.Fig. 3 G shows after transfering transistor TG is according to the conducting of transfer signal, and transfer sense charge is floating diffusion charge to floating diffusion nodes fd.When Fig. 3 H shows the decision of conversion gain signal by dual conversion gain transistor DCGT not conducting, after transfering transistor TG is according to the not conducting of transfer signal, be stored in the floating diffusion charge of floating diffusion nodes fd, cause the change of floating diffusion nodes fd position standard, such as being illustrated by the signal S1 in figure, it can be used as a signal that can be read.
When conversion gain signal determines dual conversion gain transistor DCGT conducting, with reading signal, as Fig. 3 I-3L illustrate, Fig. 3 I-3L represents when VC1 and VC2 is 0 respectively, 0,0,1,1,0, with 1, when 1, variable capacitance CA is respectively Cd, Cd+C2, Cd+C1 and Cd+C1+C2, the position of corresponding floating diffusion nodes fd is accurate, and such as, by signal S2, the S3 in each figure, S4, illustrated with S5, it can be read respectively.
More than show, according to the present invention, the signal of not coordination standard can be read, with under different photosensitive conditions, make read image more accurate.
Fig. 4 A-4B shows second embodiment of the present invention, with first embodiment unlike, reset transistor RST and dual conversion gain transistor DCGT is series at floating diffusion nodes fd.In addition, variable capacitance CA is included in diffusion capacitance Cd1 and the Cd2 that the N-type doped region in P type substrate is formed, and on P type substrate, the electric capacity C1 that the pole plate being coupled to adjustment voltage VC1 is formed, should be noted, in the present embodiment, P type substrate below pole plate and pole plate, separates diffusion capacitance Cd1 and Cd2, so, when VC1 be 0 or 1 not coordination punctual, the capacitance of variable capacitance CA is the result that Cd1 or Cd1+C1+Cd2 etc. is different.
Fig. 5 A-5F shows the 3rd embodiment of the present invention, with first embodiment unlike, in the present embodiment, storage two groups of electric charge data during reading signal, that is, as the sampling of conducting image signal and the first image signal sampling transistor SHS1 in holding circuit 22, after reading floating diffusion charge is stored in the first image signal sampling/holding capacitor CS1 as signal, the sampling of conducting image signal and the second image signal sampling transistor SHS2 in holding circuit 22 again, reading floating diffusion charge is stored in the second image signal sampling/holding capacitor CS2 as signal, and when twi-read, respectively floating diffusion nodes fd be connected with variable capacitance CA and be not connected, to obtain the data of not coordination standard.
Fig. 6 shows the 4th embodiment of the present invention, is connected to floating diffusion nodes fd with second embodiment unlike, the present embodiment display reset transistor RST and dual conversion gain transistor DCGT.
Fig. 7 shows circuit system embodiment of the present invention, show a kind of high dynamic-range image transducer, comprise: Image Sensor matrix 71, simulate to digital conversion circuit 72, with image-processing circuit 73, this high dynamic-range image transducer is such as but not limited to being integrated into an integrated circuit.Wherein, Image Sensor matrix 71, comprises multiple Image Sensor, is arranged as multiple row and multiple row; And signal reading circuit.Described by Image Sensor and signal reading circuit embodiment as the aforementioned.Simulation, to digital conversion circuit 72, couples with signal reading circuit, and it receives and transferring signals is digitized video signal.Image-processing circuit 73, couples with simulation to digital conversion circuit, to process signal.
From above content of the present invention, the present invention can adjust variable capacitance CA according to different photosensitive conditions (difference of such as environmentally brightness), and dynamically obtains the signal of multiple not coordination standard, therefore can produce more accurate image.Certainly, as adjusting variable capacitance CA according to different photosensitive conditions, then must detect luminous intensity be judged, and according to detecting result to determine the adjustment voltage of conversion gain signal or electric capacity.This can be controlled to determine according to inside back coupling by image-processing circuit 73, such as decide (as Fig. 7) with comparing of one or more critical value according to the first signal, or separately establish a detected light intensity decision circuitry 74 to control the adjustment voltage (as Fig. 8) of conversion gain signal or electric capacity.
Below for preferred embodiment, the present invention is described, just the above, be only and make those skilled in the art be easy to understand content of the present invention, be not used for limiting interest field of the present invention.Under same spirit of the present invention, those skilled in the art can think and various equivalence change.Such as, substrate of the present invention is not limited to P type semiconductor substrate, can be N type semiconductor substrate or other semiconductor substrate, as long as corresponding change doped region; For another example, in shown each embodiment circuit, the element not affecting signal major significance can be inserted, as other switch etc.; And for example, look it by vertical view, pole plate shape and quantity be not limited to rectangle as shown in the figure and one or two, can also be other arbitrary shape and other quantity; And for example, adjustment signal is not limited to 0 or 1 two kind of selection, can also be digital signal or an analog signal of multiple character.Therefore, scope of the present invention should contain above-mentioned and other all equivalence change.
Claims (19)
1. a high dynamic-range image sensing circuit, is characterized in that, comprises:
One Image Sensor is formed at one first conduction type substrate, comprising:
One light sensing unit, in order to receive light signal to produce and to store sense charge;
One floating diffusion nodes, in order to store floating diffusion charge;
One transfer diverter switch, is coupled to this floating diffusion nodes by this light sensing unit, to be transferred to this sense charge of small part from this light sensing unit to this floating diffusion nodes;
At least one variable capacitance, receives an adjustment voltage, and according to this adjustment voltage to adjust the capacitance of this variable capacitance; And
One dual conversion gain diverter switch, be coupled between this floating diffusion nodes and this variable capacitance, and receive a conversion gain signal, with according to this conversion gain signal to be electrically connected this floating diffusion nodes and this variable capacitance, with change this floating diffusion charge read time gain; And
One signal reading circuit, couples with this Image Sensor, so that this floating diffusion charge is converted to a signal, represents the pixel image that this Image Sensor senses.
2. high dynamic-range image sensing circuit as claimed in claim 1, wherein, this variable capacitance, comprising:
Be formed at the second conductivity type doped region in this first conduction type substrate; And
Be formed at least one pole plate in this first conduction type substrate, receive this adjustment voltage, to adjust the capacitance of this variable capacitance;
Wherein, by the area of this adjustment voltage and this pole plate, to determine the capacitance of this variable capacitance, or by this pole plate, this second conductivity type doped region is divided into multiple region, and receive this adjustment voltage by this pole plate, make the plurality of region under bias state, form at least one and be electrically connected state, to adjust the capacitance of this variable capacitance.
3. high dynamic-range image sensing circuit as claimed in claim 1, wherein, this Image Sensor also comprises a reset transistor, jointly be coupled to this floating diffusion nodes with this dual conversion gain diverter switch, this reset transistor is accurate accurate to a default position in order to the position resetting this floating diffusion nodes.
4. high dynamic-range image sensing circuit as claimed in claim 1, wherein, this light sensing unit comprises an optical diode, a photogate or an optical conductor.
5. high dynamic-range image sensing circuit as claimed in claim 3, wherein, this Image Sensor also comprises one source pole follower, is coupled to this floating diffusion nodes, so that this floating diffusion charge is converted to a signal, represent the pixel image that this Image Sensor senses.
6. high dynamic-range image sensing circuit as claimed in claim 5, wherein, this Image Sensor also comprises a column selection transistor, be coupled to this source follower, this column selection transistor is controlled by a column selection signal, wherein this column selection signal this column selection transistor enable, to receive this signal.
7. high dynamic-range image sensing circuit as claimed in claim 5, wherein, this signal reading circuit, comprising:
One resets signal sampling and holding circuit, has and resets signal sampling transistor and reset signal sampling/holding capacitor, and to sample and to store a replacement signal, the position standard of the floating diffusion nodes after this replacement signal changes this replacement by this source follower produced; And
One image signal sampling and holding circuit, has:
First image signal sampling transistor and the first image signal sampling/holding capacitor, sample in order to first time and store this signal; And
Second image signal sampling transistor and the second image signal sampling/holding capacitor, sample in order to second time and store this signal.
8. a high dynamic-range image sensing element, it is formed at one first conduction type substrate, it is characterized in that, this high dynamic-range image sensing element comprises:
One light sensing unit, in order to receive light signal to produce and to store sense charge;
One floating diffusion nodes, in order to store floating diffusion charge;
One transfer diverter switch, is coupled to this floating diffusion nodes by this light sensing unit, to be transferred to this sense charge of small part from this light sensing unit to this floating diffusion nodes;
At least one variable capacitance, receives an adjustment voltage, and according to this adjustment voltage to adjust the capacitance of this variable capacitance; And
One dual conversion gain diverter switch, be coupled between this floating diffusion nodes and this variable capacitance, and receive a conversion gain signal, with according to this conversion gain signal to be electrically connected this floating diffusion nodes and this variable capacitance, with change this floating diffusion charge read time gain.
9. high dynamic-range image sensing element as claimed in claim 8, wherein, this variable capacitance, comprising:
Be formed at the second conductivity type doped region in this first conduction type substrate; And
Be formed at least one pole plate in this first conduction type substrate, receive this adjustment voltage, to adjust the capacitance of this variable capacitance;
Wherein, by the area of this adjustment voltage and this pole plate, to determine the capacitance of this variable capacitance, or by this pole plate, this second conductivity type doped region is divided into multiple region, and receive this adjustment voltage by this pole plate, make the plurality of region under bias state, form at least one and be electrically connected state, to adjust the capacitance of this variable capacitance.
10. high dynamic-range image sensing element as claimed in claim 8, wherein, also comprise a reset transistor, be jointly coupled to this floating diffusion nodes with this dual conversion gain diverter switch, this reset transistor is accurate accurate to a default position in order to the position resetting this floating diffusion nodes.
11. high dynamic-range image sensing elements as claimed in claim 8, wherein, this light sensing unit comprises an optical diode, a photogate or an optical conductor.
12. high dynamic-range image sensing elements as claimed in claim 10, wherein, also comprise one source pole follower, are coupled to this floating diffusion nodes, so that this floating diffusion charge is converted to a signal, represent the pixel image that this Image Sensor senses.
13. 1 kinds of high dynamic-range image transducers, is characterized in that, comprise:
One Image Sensor matrix, it is formed at one first conduction type substrate, and this image sensing component matrix comprises:
Multiple Image Sensor, be arranged as multiple row and multiple row, this Image Sensor comprises:
One light sensing unit, in order to receive light signal to produce and to store sense charge;
One floating diffusion nodes, in order to store floating diffusion charge;
One transfer diverter switch, is coupled to this floating diffusion nodes by this light sensing unit, to be transferred to this sense charge of small part from this light sensing unit to this floating diffusion nodes;
At least one variable capacitance, receives an adjustment voltage, and according to this adjustment voltage to adjust the capacitance of this variable capacitance; And
One dual conversion gain diverter switch, be coupled between this floating diffusion nodes and this variable capacitance, and receive a conversion gain signal, to be electrically connected this floating diffusion nodes and this variable capacitance according to this conversion gain signal, to change gain when this floating diffusion charge reads; And
One signal reading circuit, couples with this Image Sensor, so that this floating diffusion charge is converted to a signal, represents the pixel image that this Image Sensor senses;
One simulation is to digital conversion circuit, and couple with this signal reading circuit, it receives and changes this signal into a digitized video signal; And
One image-processing circuit, couples to digital conversion circuit with this simulation, to process this signal.
14. high dynamic-range image transducers as claimed in claim 13, wherein, this variable capacitance, comprising:
Be formed at the second conductivity type doped region in this first conduction type substrate; And
Be formed at least one pole plate in this first conduction type substrate, receive this adjustment voltage, to adjust this variable capacitance;
Wherein, by the area of this adjustment voltage and this pole plate, to determine the capacitance of this variable capacitance, or by this pole plate, this second conductivity type doped region is divided into multiple region, and receive this adjustment voltage by this pole plate, make the plurality of region under bias state, form at least one and be electrically connected state, to adjust the capacitance of this variable capacitance.
15. high dynamic-range image transducers as claimed in claim 13, wherein, this image-processing circuit is feedback and is controlled this conversion gain signal maybe this adjustment voltage.
16. high dynamic-range image transducers as claimed in claim 13, wherein, also include a detected light intensity decision circuitry, its detected light intensity and control this conversion gain signal maybe this adjustment voltage.
17. high dynamic-range image transducers as claimed in claim 13, wherein, this signal reading circuit, comprising:
One resets signal sampling and holding circuit, has and resets signal sampling transistor and reset signal sampling/holding capacitor, to sample and to store a replacement signal; And
One image signal sampling and holding circuit, has:
First image signal sampling transistor, samples in order to first time and stores this signal; And
Second image signal sampling transistor, samples in order to second time and stores this signal.
18. 1 kinds of high dynamic-range image read methods, is characterized in that, comprise:
Receive light signal to produce and to store sense charge;
According to a transfer signal, be transferred to small part sense charge to floating diffusion nodes;
According to a conversion gain signal, so that this floating diffusion nodes is electrically connected to a variable capacitance, to change the gain during floating diffusion charge reading this floating diffusion nodes, wherein, this variable capacitance adjusts voltage to determine the capacitance of this variable capacitance according to one;
Reading this floating diffusion charge is the first signal, represents the pixel image sensed; And
Detected light intensity is to control this conversion gain signal maybe this adjustment voltage.
19. high dynamic-range image read methods as claimed in claim 18, wherein, also comprise: reading this floating diffusion charge is the second signal; Wherein, when the reading of this first signal and this second signal is electrically connected respectively at this floating diffusion nodes and this variable capacitance and is not connected for it.
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