CN102752046A - Optical module of optical network unit, optical power detection device and optical power detection method - Google Patents

Optical module of optical network unit, optical power detection device and optical power detection method Download PDF

Info

Publication number
CN102752046A
CN102752046A CN2012102562343A CN201210256234A CN102752046A CN 102752046 A CN102752046 A CN 102752046A CN 2012102562343 A CN2012102562343 A CN 2012102562343A CN 201210256234 A CN201210256234 A CN 201210256234A CN 102752046 A CN102752046 A CN 102752046A
Authority
CN
China
Prior art keywords
mcu
output end
luminous power
state
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012102562343A
Other languages
Chinese (zh)
Inventor
程磊
张华�
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hisense Broadband Multimedia Technology Co Ltd
Original Assignee
Hisense Broadband Multimedia Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hisense Broadband Multimedia Technology Co Ltd filed Critical Hisense Broadband Multimedia Technology Co Ltd
Priority to CN2012102562343A priority Critical patent/CN102752046A/en
Publication of CN102752046A publication Critical patent/CN102752046A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention discloses an optical module of an optical network unit, an optical power detection device and an optical power detection method. The optical module comprises a current mirror image circuit and a first sampling resistor, wherein a current input end of the current mirror image circuit is connected with a cathode of a photodiode in the optical module; a mirror image current output end of the current mirror image circuit is grounded through the first sampling resistor; a voltage input end of an MCU (Micro-programmed Control Unit) is connected with a mirror image current output end; a second sampling resistor is connected between the control output end of the MCU and the mirror image current output end; the MCU is used for detecting a voltage input to the voltage input end thereof, determining the optical power according to the detected voltage value and controlling the outputting of the control output end according to the determined optical power. As the two sampling resistors are adopted and different resistance values of the sampling resistors are adopted respectively at the high-power section and low-power section of the optical power, the optical module of the optical network unit, has the advantages of not only guaranteeing the optical power detection in the high-power section to be not beyond the detection range of the MCU, but also guaranteeing the detection precision of the optical powder in the low-power section.

Description

Optical network unit optical module and optical power detection apparatus thereof and detection method
Technical field
The present invention relates to Fibre Optical Communication Technology, relate in particular to a kind of optical network unit optical module and optical power detection apparatus and detection method.
Background technology
Present domestic market and international market have begun to use with the optical fiber communication direction that multiple business is merged with a large bandwidth and at a high rate; In numerous solutions, the appearance that Fiber to the home (FTTH) just is considered to the ultimate solution of broadband access.The domestic market is large-area applications.
And in the numerous schemes of FTTH, wherein PON (EPON) receives much concern again, becomes the light access way of present main flow.The PON technology has experienced APON, BPON EPON, GPON up till now in several years.And along with the development of the universal and broadband access technology of ethernet technology in metropolitan area network, the broadband P ON technology that attention more 1Gbit/s is above, i.e. EPON, GPON.The full name of GPON is Gigabit-capable PON, the EPON of gigabit progression just, and its transmission rate maximum can reach 2.5Gbps; And the support multiple business comprises ATM, Ethernet; TDM, CATV pays attention to multi-service; Can be described as the most perfect PON network technology of present function, also be a kind of very economical, towards the network access mode in broadband.
Generally comprise laser emission element and laser pick-off unit in the ONU optical module of PON network, the laser pick-off unit comprises ROSA (Receiver Optical Subassembly, optical fiber receive module) and amplitude limiting amplifier circuit; Perhaps comprise BOSA (Bidirectional Optical Subassembly, bi-directional light assembly) in the ONU optical module, BOSA can carry out Laser emission and reception.Photodiode and TIA have been generally included among ROSA or the BOSA.Said photodiode specifically can be APD (the Avalanche Photo Diode that is applied in the ONU optical module of GPON network; Avalanche photodide); It also can be the PIN photodiode (between P, N knot, adding an I district, the semiconductor photo detector of formation PIN structure) that is applied in the ONU optical module of EPON network near intrinsic material.The power of the light signal that is necessary usually the laser pick-off unit is received detects, so that the OLT of the local side of PON network can understand the state of ONU optical module.Fig. 1 illustrates the sketch map of the luminous power testing circuit in the ONU optical module of prior art, comprising: laser pick-off unit 101, response current detection module 102 and MCU (Microprogrammed Control Unit, mini program controlling unit) 103.
Comprise ROSA (Receiver Optical Subassembly, optical fiber receive module) and amplitude limiting amplifier circuit in the laser pick-off unit 101, comprise photodiode and TIA (TranimpedanceAmplifier, trans-impedance amplifier) among the ROSA; APD exports corresponding response current Ipd after detecting light signal; Generally speaking, the power of the light signal that APD surveys is strong more, and then the Ipd of output is big more.
The negative electrode of photodiode links to each other with the current input terminal of response current detection module 102, and the Ipd of photodiode output flow into response current detection module 102.Response current detection module 102 is in order to detecting Ipd, and according to the Ipd of input from its voltage output end output correspondent voltage.That is to say that the voltage of response current detection module 102 outputs changes with the change of the Ipd of input, particularly, both can be relations in direct ratio.In other words, the voltage of response current detection module 102 outputs can reflect the Ipd of input, and then also just can reflect the power of the light signal that photodiode is surveyed.
The voltage input end of MCU103 is connected with the voltage output end of response current detection module 102, in order to detect the voltage of response current detection module 102 outputs.MCU103 judges whether to receive effective light signal according to the voltage of the response current detection module that detects 102 outputs; MCU103 controls the output of light detecting signal according to judged result.
Specifically comprise in the response current detection module 102: current mirror circuit 1011, sampling resistor 1012.
The current input terminal of current mirror circuit 1011 links to each other with the negative electrode of photodiode, in order to receive the Ipd of APD output.The Ipd inflow current mirror image circuit 1011 of photodiode output; The image current output of current mirror circuit 1011 links to each other with sampling resistor 1012, and the image current of Ipd flows into power supply ground through sampling resistor 1012, and promptly the image current output of current mirror circuit 1011 is received power supply ground through sampling resistor 1012.
The image current output of current mirror circuit 1011 and the tie point of sampling resistor 1012 are as the voltage output end of response current detection module 102, thereby the voltage on the sampling resistor 1012 is the output voltage of current detection module 102.MCU103 detects the output voltage of current detection module 102; Promptly detect the voltage on the sampling resistor 1012; And the voltage on the sampling resistor 1012 has reflected the size of the image current of current mirror circuit 1011; The image current of current mirror circuit 1011 has reflected the size of the Ipd that flows into, has also just reflected the size of the power of the light signal that photodiode is surveyed.
MCU103 calculates the power of the light signal of photodiode detection according to the potentiometer of the response current detection module that detects 102 outputs, thereby has realized the luminous power detection.
But inventor of the present invention finds that the luminous power detection method of prior art exists luminous power to detect ultra scope, the perhaps low problem of luminous power accuracy of detection:
If the power of the light signal that photodiode is surveyed is bigger, the Ipd of its output will be bigger, thereby the voltage on the sampling resistor can be very high, might exceed the reference voltage detection of MCU103; Therefore, luminous power will exceed the detectable scope of MCU103.
If the power of the light signal that photodiode is surveyed is very little; The Ipd of its output will be very little; Thereby the voltage on the sampling resistor can be very low, and MCU103 detects for very low voltage and can't guarantee precision, thereby cause the accuracy of detection of lower luminous power to guarantee.
Therefore, the luminous power detection method of prior art exists luminous power to detect ultra scope, the perhaps low problem of low-power section accuracy of detection of luminous power.
Summary of the invention
Embodiments of the invention provide a kind of optical network unit optical module and optical power detection apparatus and detection method, have both avoided luminous power to detect ultra scope, guarantee the accuracy of detection of luminous power low-power section again.
According to an aspect of the present invention, a kind of optical network unit optical module is provided, has comprised:
The negative electrode of the photodiode in the current mirror circuit and first sampling resistor, the current input terminal of said current mirror circuit and said optical module links to each other, and the image current output of said current mirror circuit is received power supply ground through first sampling resistor;
Mini program controlling unit MCU, its voltage input end links to each other with said image current output;
Second sampling resistor is connected between the image current output of control output end and said current mirror circuit of said MCU;
Said MCU is used to detect the voltage that is input to its voltage input end, confirms luminous power according to the magnitude of voltage that detects; And, control the output of its control output end according to the luminous power of confirming.
Wherein, said MCU is according to the luminous power of confirming, the output of controlling its control output end is specially:
If MCU confirms said luminous power greater than first threshold, then control its control output end output low level;
If MCU confirms said luminous power less than second threshold value, then controlling its control output end is high-impedance state.
Said MCU confirms that according to the magnitude of voltage that detects luminous power is specially:
Said MCU is according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power;
Wherein, first state refers to the state of the control output end output low level of said MCU; The control output end that second state refers to said MCU is the state of high resistant.
According to another aspect of the present invention, a kind of optical power detection apparatus is provided, has comprised:
The current mirror circuit and first sampling resistor, the current input terminal of said current mirror circuit links to each other with the negative electrode of photodiode, and the image current output of said current mirror circuit is received power supply ground through first sampling resistor;
Mini program controlling unit MCU, its voltage input end links to each other with said image current output;
Second sampling resistor is connected between the image current output of control output end and said current mirror circuit of said MCU;
Said MCU is used to detect the voltage that is input to its voltage input end, confirms luminous power according to the magnitude of voltage that detects; And, control the output of its control output end according to the luminous power of confirming.
Wherein, said MCU is according to the luminous power of confirming, the output of controlling its control output end is specially:
If MCU confirms said luminous power greater than first threshold, then control its control output end output low level;
If MCU confirms said luminous power less than second threshold value, then controlling its control output end is high-impedance state.
Said MCU confirms that according to the magnitude of voltage that detects luminous power is specially:
Said MCU is according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power;
Wherein, first state refers to the state of the control output end output low level of said MCU; The control output end that second state refers to said MCU is the state of high resistant.
According to another aspect of the present invention, a kind of luminous power detection method is provided, has comprised:
MCU detects the voltage that is input to its voltage input end, confirms luminous power according to the magnitude of voltage that detects; And, control the output of its control output end according to the luminous power of confirming;
Wherein, Said MCU voltage input end links to each other with the image current output of current mirror circuit; The current input terminal of said current mirror circuit links to each other with the negative electrode of photodiode, and the image current output of said current mirror circuit is received power supply ground through first sampling resistor; The control output end of said MCU links to each other with the image current output of said current mirror circuit through second sampling resistor.
Wherein, said MCU is according to the luminous power of confirming, the output of controlling its control output end is specially:
If MCU confirms said luminous power greater than first threshold, then control its control output end output low level;
If MCU confirms said luminous power less than second threshold value, then controlling its control output end is high-impedance state.
Said MCU confirms that according to the magnitude of voltage that detects luminous power is specially:
Said MCU is according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power;
Wherein, first state refers to the state of the control output end output low level of said MCU; The control output end that second state refers to said MCU is the state of high resistant.
The embodiment of the invention is owing to adopt two sampling resistors; High power section in luminous power adopts the resistance of different sampling resistors respectively with the low-power section, thereby the luminous power that had both guaranteed the high power section detects the detection range that is no more than MCU, guarantees the luminous power accuracy of detection of low-power section again.
Description of drawings
Fig. 1 is the sketch map of the luminous power testing circuit in the ONU optical module of prior art;
Fig. 2 is the sketch map of the luminous power testing circuit in the ONU optical module of the embodiment of the invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below with reference to accompanying drawing and enumerate preferred embodiment, to further explain of the present invention.Yet, need to prove that many details of listing in the specification only are in order to make the reader to one or more aspects of the present invention a thorough understanding arranged, even if there are not these specific details also can realize these aspects of the present invention.
Terms such as " module " that the application uses, " system " are intended to comprise the entity relevant with computer, such as but not limited to hardware, firmware, combination thereof, software or executory software.For example, module can be, but be not limited in: the thread of the process of moving on the processor, processor, object, executable program, execution, program and/or computer.
Main thought of the present invention is to adopt two sampling resistors; High power section in luminous power adopts the resistance of different sampling resistors respectively with the low-power section, thereby the luminous power that had both guaranteed the high power section detects the detection range that is no more than MCU, guarantees the luminous power accuracy of detection of low-power section again.
Specify the technical scheme of the embodiment of the invention below in conjunction with accompanying drawing.Luminous power testing circuit in the ONU optical module of the embodiment of the invention, as shown in Figure 2, comprising: ROSA or BOSA, current mirror circuit 202, MCU203, the first sampling resistor R404, the second sampling resistor R405.
Comprise photodiode and TIA among ROSA or the BOSA; Photodiode is exported corresponding response current Ipd after detecting light signal; Generally speaking, the power of the light signal that photodiode is surveyed is strong more, and then the Ipd of output is big more.
The current input terminal of current mirror circuit 202 links to each other with the negative electrode of photodiode, in order to receive the Ipd of photodiode output.The Ipd inflow current mirror image circuit 202 of photodiode output; The image current output of current mirror circuit 202 links to each other with the first sampling resistor R404; The image current of Ipd flows into power supply ground through the first sampling resistor R404, and promptly the image current output of current mirror circuit 202 is received power supply ground through the first sampling resistor R404.
The voltage input end of MCU203 links to each other with the image current output of current mirror circuit 202, and just the voltage input end of MCU203 links to each other with the first sampling resistor R404.In addition, the voltage input end of MCU203 also links to each other with the end of the second sampling resistor R405, and the other end of the second sampling resistor R405 links to each other with the control output end of MCU203.Promptly the second sampling resistor R405 is connected between the image current output of control output end and current mirror circuit 202 of MCU203.
MCU203 can pass through its control output end; The variation of control sampling resistor resistance: if MCU203 is from its control output end output low level; The sampling resistor resistance that then is linked into the image current output of current mirror circuit 202 is: R404 and R405 parallel resistor resistance; That is to say that the image current that the image current output of current mirror circuit 202 flows out flow into power supply ground through R404 and R405; MCU203 is a high resistant if its control output end is set; The sampling resistor resistance that then is linked into the image current output of current mirror circuit 202 is the resistance of R404; That is to say that the image current that the image current output of current mirror circuit 202 flows out only flow into power supply ground through R404.
Generally speaking, the control output end of MCU203 can be general purpose I/O port of MCU203, and it can be in three kinds of states: output high level, output low level, or be high-impedance state.State with the control output end output low level of MCU203 among this paper is called first state (or claiming state A); With the control output end of MCU203 is that the state of high resistant is called second state (or claiming state B).
MCU203 is input to the voltage of its voltage input end in order to detection, and this voltage is that the image current of current mirror circuit 202 outputs is through voltage that sampling resistor produced.MCU203 confirms luminous power according to the magnitude of voltage that detects.Particularly, MCU203 can adopt the method for tabling look-up to confirm luminous power according to the magnitude of voltage that detects; Perhaps, calculate luminous power according to magnitude of voltage that detects and current sampling resistor resistance.MCU203 confirms the method that the method for luminous power is well known to those skilled in the art according to the magnitude of voltage that detects, and repeats no more here.
Because under first state and second state, the sampling resistor resistance of image current output that is linked into current mirror circuit 202 is different, and therefore, the method for MCU203 calculating luminous power under first state and second state is also just different.So MCU203 also confirms luminous power according to the current state of its control output end when confirming luminous power according to the magnitude of voltage that detects.Be MCU203 according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power.
After MCU203 determines luminous power, will further confirm current state, and then whether decision carries out the transformation of state:
If MCU203 confirms that luminous power greater than the first threshold of setting, shows that then the luminous power of detection is in the high power section, confirm that then current state is first state; MCU203 is under first state, and from its control output end output low level, then the sampling resistor resistance is: R404 and R405 parallel resistor resistance; So, the sampling resistor resistance is less, can avoid the overtension on the sampling resistor, also just avoid being input to the voltage input end of MCU203 overtension, surpass the reference voltage detection of MCU203; Thereby the luminous power that guarantees the high power section detects the detection range that is no more than MCU, has avoided luminous power to detect ultra scope.
If MCU203 confirms that luminous power is less than second threshold value of setting; The luminous power that then shows detection is in the low-power section, confirms that then current state is second state, and MCU203 is under second state; Controlling its control output end is high-impedance state, and then the sampling resistor resistance is: the resistance of R404; So; The sampling resistor resistance is bigger; Can be so that under the less situation of the image current of current mirror circuit 202 outputs, the voltage on the sampling resistor still be maintained in the higher scope, like this; MCU203 can guarantee the precision through the voltage of its voltage input end detection, thereby avoids can't guaranteeing owing to the brownout that detects the problem of accuracy of detection.
Above-mentioned first threshold is greater than second threshold value; Those skilled in the art can be provided with the first threshold and second threshold value according to actual conditions.For example, the first threshold and second threshold value are set to be respectively-16dBm and-14dBm.Because the first threshold and second threshold value are unequal, then between the first threshold and second threshold value, have produced between stagnant regions, can avoid single-point to switch and cause the control output end of MCU203 reforming phenomena to occur.
Further, the ONU optical module is arranged on Access Network usually, belongs to family's product of registering one's residence, and can use in family or office.For reduce its to external world electromagnetic radiation, also adopt circuit board signal ground to be connected in the ONU optical module of the embodiment of the invention with the shell of ONU optical module; ROSA or BOSA housing are connected through conducting foam with the shell of ONU optical module; ROSA or BOSA shell CASE pin and the mode that the welding of circuit board signal ground is communicated with make that the path of releasing of signal is shorter, have reduced the external electromagnetic radiation of ONU optical module effectively.
Though the embodiment of the invention is to be that example is told about the concrete grammar that luminous power detects with the luminous power testing circuit in the ONU optical module, obviously, the method that this luminous power detects also can be applicable to other need carry out the occasion that luminous power detects, and is not limited in the ONU optical module.Therefore, all should be regarded as protection scope of the present invention for the luminous power testing circuit that is applied to the embodiment of the invention in other module or the equipment (or optical power detection apparatus, luminous power detection method).
The embodiment of the invention is owing to adopt two sampling resistors; High power section in luminous power adopts the resistance of different sampling resistors respectively with the low-power section, thereby the luminous power that had both guaranteed the high power section detects the detection range that is no more than MCU, guarantees the luminous power accuracy of detection of low-power section again.
One of ordinary skill in the art will appreciate that all or part of step that realizes in the foregoing description method is to instruct relevant hardware to accomplish through program; This program can be stored in the computer read/write memory medium, as: ROM/RAM, magnetic disc, CD etc.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.

Claims (12)

1. optical network unit optical module comprises:
The negative electrode of the photodiode in the current mirror circuit and first sampling resistor, the current input terminal of said current mirror circuit and said optical module links to each other, and the image current output of said current mirror circuit is received power supply ground through first sampling resistor;
Mini program controlling unit MCU, its voltage input end links to each other with said image current output;
Second sampling resistor is connected between the image current output of control output end and said current mirror circuit of said MCU;
Said MCU is used to detect the voltage that is input to its voltage input end, confirms luminous power according to the magnitude of voltage that detects; And, control the output of its control output end according to the luminous power of confirming.
2. optical module as claimed in claim 1 is characterized in that, said MCU is according to the luminous power of confirming, the output of controlling its control output end is specially:
If MCU confirms said luminous power greater than first threshold, then control its control output end output low level;
If MCU confirms said luminous power less than second threshold value, then controlling its control output end is high-impedance state.
3. optical module as claimed in claim 2 is characterized in that, said MCU confirms that according to the magnitude of voltage that detects luminous power is specially:
Said MCU is according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power;
Wherein, first state refers to the state of the control output end output low level of said MCU; The control output end that second state refers to said MCU is the state of high resistant.
4. like the arbitrary described optical module of claim 1-3, it is characterized in that first threshold is greater than second threshold value.
5. optical module as claimed in claim 4; It is characterized in that; Its circuit board signal ground is connected with its shell; The ROSA of said optical module or the housing of BOSA are connected through conducting foam with the shell of said optical module, and the shell CASE pin of said ROSA or BOSA is communicated with the welding of said circuit board signal ground.
6. optical power detection apparatus comprises:
The current mirror circuit and first sampling resistor, the current input terminal of said current mirror circuit links to each other with the negative electrode of photodiode, and the image current output of said current mirror circuit is received power supply ground through first sampling resistor;
Mini program controlling unit MCU, its voltage input end links to each other with said image current output;
Second sampling resistor is connected between the image current output of control output end and said current mirror circuit of said MCU;
Said MCU is used to detect the voltage that is input to its voltage input end, confirms luminous power according to the magnitude of voltage that detects; And, control the output of its control output end according to the luminous power of confirming.
7. device as claimed in claim 6 is characterized in that, said MCU is according to the luminous power of confirming, the output of controlling its control output end is specially:
If MCU confirms said luminous power greater than first threshold, then control its control output end output low level;
If MCU confirms said luminous power less than second threshold value, then controlling its control output end is high-impedance state.
8. device as claimed in claim 7 is characterized in that, said MCU confirms that according to the magnitude of voltage that detects luminous power is specially:
Said MCU is according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power;
Wherein, first state refers to the state of the control output end output low level of said MCU; The control output end that second state refers to said MCU is the state of high resistant.
9. like the arbitrary described device of claim 6-8, it is characterized in that first threshold is greater than second threshold value.
10. luminous power detection method comprises:
MCU detects the voltage that is input to its voltage input end, confirms luminous power according to the magnitude of voltage that detects; And, control the output of its control output end according to the luminous power of confirming;
Wherein, Said MCU voltage input end links to each other with the image current output of current mirror circuit; The current input terminal of said current mirror circuit links to each other with the negative electrode of photodiode, and the image current output of said current mirror circuit is received power supply ground through first sampling resistor; The control output end of said MCU links to each other with the image current output of said current mirror circuit through second sampling resistor.
11. method as claimed in claim 10 is characterized in that, said MCU is according to the luminous power of confirming, the output of controlling its control output end is specially:
If MCU confirms said luminous power greater than first threshold, then control its control output end output low level;
If MCU confirms said luminous power less than second threshold value, then controlling its control output end is high-impedance state.
12. method as claimed in claim 11 is characterized in that, said MCU confirms that according to the magnitude of voltage that detects luminous power is specially:
Said MCU is according to the magnitude of voltage that detects, with and the current state of control output end be first state or second state, confirm luminous power;
Wherein, first state refers to the state of the control output end output low level of said MCU; The control output end that second state refers to said MCU is the state of high resistant.
CN2012102562343A 2012-07-23 2012-07-23 Optical module of optical network unit, optical power detection device and optical power detection method Pending CN102752046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012102562343A CN102752046A (en) 2012-07-23 2012-07-23 Optical module of optical network unit, optical power detection device and optical power detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012102562343A CN102752046A (en) 2012-07-23 2012-07-23 Optical module of optical network unit, optical power detection device and optical power detection method

Publications (1)

Publication Number Publication Date
CN102752046A true CN102752046A (en) 2012-10-24

Family

ID=47031969

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012102562343A Pending CN102752046A (en) 2012-07-23 2012-07-23 Optical module of optical network unit, optical power detection device and optical power detection method

Country Status (1)

Country Link
CN (1) CN102752046A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103067077A (en) * 2013-01-07 2013-04-24 青岛海信宽带多媒体技术有限公司 Collecting device for improving small-light monitoring precision and monitor signal collecting method
CN103647606A (en) * 2013-11-26 2014-03-19 上海斐讯数据通信技术有限公司 GPON terminal transmitting-receiving-integrated optical assembly with RSSI function
CN105007125A (en) * 2015-06-01 2015-10-28 上海市共进通信技术有限公司 Optical network terminal apparatus having highlight protection function and method
WO2016106544A1 (en) * 2014-12-30 2016-07-07 华为技术有限公司 Analog-to-digital converter protection circuit and control method thereof, and controller
CN104320183B (en) * 2014-10-13 2017-02-22 青岛海信宽带多媒体技术有限公司 Optical power monitoring circuit, optical module and optical network
WO2018000340A1 (en) * 2016-06-30 2018-01-04 华为技术有限公司 Optical power reception range dynamically-adjusting optical module
CN111431611A (en) * 2020-03-19 2020-07-17 青岛海信宽带多媒体技术有限公司 Optical module
CN114070392A (en) * 2020-08-04 2022-02-18 青岛海信宽带多媒体技术有限公司 Optical module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090200450A1 (en) * 2008-02-12 2009-08-13 Rintaro Nomura Burst light receiving power monitor circuit, method, and program
CN201750415U (en) * 2010-09-15 2011-02-16 深圳新飞通光电子技术有限公司 Optical power receiving monitoring circuit for optical transceiving module
CN201750416U (en) * 2010-09-15 2011-02-16 深圳新飞通光电子技术有限公司 Receiving light power monitoring circuit of light transmit-receive module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090200450A1 (en) * 2008-02-12 2009-08-13 Rintaro Nomura Burst light receiving power monitor circuit, method, and program
CN201750415U (en) * 2010-09-15 2011-02-16 深圳新飞通光电子技术有限公司 Optical power receiving monitoring circuit for optical transceiving module
CN201750416U (en) * 2010-09-15 2011-02-16 深圳新飞通光电子技术有限公司 Receiving light power monitoring circuit of light transmit-receive module

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103067077B (en) * 2013-01-07 2015-10-21 青岛海信宽带多媒体技术有限公司 Improve harvester and the pilot signal acquisition method of little light monitoring precision
CN103067077A (en) * 2013-01-07 2013-04-24 青岛海信宽带多媒体技术有限公司 Collecting device for improving small-light monitoring precision and monitor signal collecting method
CN103647606A (en) * 2013-11-26 2014-03-19 上海斐讯数据通信技术有限公司 GPON terminal transmitting-receiving-integrated optical assembly with RSSI function
CN104320183B (en) * 2014-10-13 2017-02-22 青岛海信宽带多媒体技术有限公司 Optical power monitoring circuit, optical module and optical network
US9923567B2 (en) 2014-12-30 2018-03-20 Huawei Technologies Co., Ltd Analog-to-digital converter protection circuit, method for controlling analog-to-digital converter protection circuit, and controller
WO2016106544A1 (en) * 2014-12-30 2016-07-07 华为技术有限公司 Analog-to-digital converter protection circuit and control method thereof, and controller
JP2018506887A (en) * 2014-12-30 2018-03-08 華為技術有限公司Huawei Technologies Co.,Ltd. Analog-to-digital converter protection circuit, method for controlling analog-to-digital converter protection circuit, and controller
CN105007125A (en) * 2015-06-01 2015-10-28 上海市共进通信技术有限公司 Optical network terminal apparatus having highlight protection function and method
WO2018000340A1 (en) * 2016-06-30 2018-01-04 华为技术有限公司 Optical power reception range dynamically-adjusting optical module
CN108028703A (en) * 2016-06-30 2018-05-11 华为技术有限公司 Dynamic adjusts the optical module of luminous power range of receiving
US10560200B2 (en) 2016-06-30 2020-02-11 Huawei Technologies Co., Ltd. Optical module for dynamically adjusting optical power receiving range
CN108028703B (en) * 2016-06-30 2020-09-08 华为技术有限公司 Optical module for dynamically adjusting optical power receiving range
CN111431611A (en) * 2020-03-19 2020-07-17 青岛海信宽带多媒体技术有限公司 Optical module
CN111431611B (en) * 2020-03-19 2022-09-09 青岛海信宽带多媒体技术有限公司 Optical module
CN114070392A (en) * 2020-08-04 2022-02-18 青岛海信宽带多媒体技术有限公司 Optical module

Similar Documents

Publication Publication Date Title
CN102752046A (en) Optical module of optical network unit, optical power detection device and optical power detection method
CN102752045A (en) Optical module for optical network unit
CN102843190B (en) optical module and optical module chip thereof
CN102752052A (en) Optical module of optical network unit and method for outputting control electric signal thereof
CN103135651B (en) Based on APD reverse bias voltage control circuit and the control method of two close cycles
US10516484B2 (en) Optical module
US10110316B2 (en) OLT optical module and OLT
US8909054B2 (en) Bi-direction optical sub-assembly and optical transceiver
CN103023575B (en) Optical burst receiving circuit for GPON LOTs (gigabit passive optical network optical line terminals)
CN107517080B (en) Optical power detection method, device, equipment and optical module
CN103067090A (en) Receiving signal power reinforcing indicator used for optical device and application method
CN103152103A (en) Optical module and adaptive regulation method for rate mode of clock and data recovery (CDR) chip of optical module
CN105099557A (en) Optical module and optical device applied to optical module
CN102820931A (en) Optical module of dual-mode optical network unit
KR20030082074A (en) Optical receiver for receiving burst-mode signal
JP2007043692A (en) Optical access line, optical system, tree type access network, measurement unit, reflector and method for recognizing integrity of optical transmission-reception unit
WO2008139326A2 (en) Pin/tia system for use in fttx applications
US7206521B2 (en) Signal level detecting device for a burst-mode optical receiver
CN109347564A (en) A kind of optical module
CN105610512A (en) DC-20Mbps low-rate double-reception SFP optical module
CN103095369A (en) Rapid signal detection circuit
CN202737870U (en) Optical network unit optical module
CN102761372B (en) Optical module and light emission instruction signal output circuit thereof
CN106100754B (en) A method of it improving DP-QPSK and integrates coherent receiver signal detection isolation
KR100547783B1 (en) Optical signal power level measuring apparatus in Gigabit passive optical subscriber network and OLT

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20121024