CN102751303A - Method for producing image sensor and image sensor - Google Patents
Method for producing image sensor and image sensor Download PDFInfo
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- CN102751303A CN102751303A CN2012102620175A CN201210262017A CN102751303A CN 102751303 A CN102751303 A CN 102751303A CN 2012102620175 A CN2012102620175 A CN 2012102620175A CN 201210262017 A CN201210262017 A CN 201210262017A CN 102751303 A CN102751303 A CN 102751303A
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Abstract
The invention provides a method for manufacturing an image sensor and the image sensor. According to the invention, the method for manufacturing the image sensor comprises the following steps of: step 1, carrying out etching on an active area of the image sensor; step 2, forming a shallow trench area, and oxidizing a lining of the shallow trench area; step 3, carrying out ion injection to a trench area by use of a trench mask and first ion injection to an injection isolating area by use of the trench mask; step 4, carrying out a pixel process to carry out the ion injection to a photodiode; and step 5, without a mask, carrying out integrated injection to the entire image sensor to complete second ion injection to the injection isolating area.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the imageing sensor that the present invention relates to a kind of method for making image sensor and process thus.
Background technology
Imageing sensor is an important component part of forming digital camera.According to the difference of element, can be divided into two big types of CCD (Charge Coupled Device, charge coupled cell) and CMOS (Complementary Metal-Oxide Semiconductor, metal oxide semiconductor device).
In image sensor design and manufacture process, need on silicon chip, make pixel cell, these dot structures must effectively be isolated with device or the zone around it, for example isolate with dot structure on every side.
And; In fact, if do not isolate, then imageing sensor forms crosstalk signal (electronics) easily between two dot structure districts; So; In the prior art, generally on the shallow trench zone around the diode, make mask aperture, and carry out that ion injects so that isolate adjacent active area in the bottom.This isolation can form the injection isolated area shape of one ' four sides wall ' center on.
Fig. 1 schematically shows the sketch map of the injection isolated area between the adjacent pixel regions of imageing sensor.As shown in Figure 1; In the prior art, being used for the injection isolated area 2 that prevents electric crosstalk signal between the neighbor structural area is that light sensitive diode (not shown) in forming (photoetching and etching) each pixel region 1 is afterwards through utilizing an additional mask to form.Wherein, forms at last owing to inject isolated area 2, thus inject isolated area 2 maybe and each pixel region 1 between the regional (not shown) of shallow trench overlap.
But; Method for making image sensor in prior art; Need an additional mask to form the injection isolated area between the adjacent pixel regions; Increase the manufacturing cost of imageing sensor thus, and increased the processing step that isolated area is injected in independent manufacturing, increased process complexity thus.
So, can omit the method for making image sensor that the additional mask that increases in order to form the injection isolated area between the adjacent pixel regions reduces the manufacturing cost of imageing sensor and reduces process complexity thereby hope can provide a kind of.
Summary of the invention
Technical problem to be solved by this invention is to have above-mentioned defective in the prior art; Thereby provide a kind of and can omit the method for making image sensor that the additional mask that increases in order to form the injection isolated area between the adjacent pixel regions reduces the manufacturing cost of imageing sensor and reduces process complexity, and a kind of imageing sensor of processing according to this method for making image sensor is provided.
According to a first aspect of the invention, a kind of method for making image sensor is provided, it comprises: first step: carry out the etching to the active area of imageing sensor; Second step: form the shallow trench zone, and the lining in shallow trench zone is carried out oxidation; Third step: utilize trench mask to carry out the trench region ion and inject, and utilize trench mask to inject isolated area ion injection for the first time; The 4th step: carry out pixel technology and inject so that light sensitive diode is carried out ion; And the 5th step: do not adopt mask, the entire image transducer carried out full wafer inject, with accomplish inject isolated area for the second time ion inject.
Preferably, in above-mentioned method for making image sensor, the injection isolated area among said third step S3 ion is for the first time injected the ion doping energy and 6 * 10 that is included in 50kev
12The condition of dosage under carry out boron element and inject.
Preferably, in above-mentioned method for making image sensor, the injection isolated area among said the 5th step S5 ion is for the second time injected the ion doping energy and 14 * 10 that is included in 750kev
12The condition of dosage under carry out the B boron element and inject.
Preferably, in above-mentioned method for making image sensor, the injection isolated area among said the 5th step S5 ion is for the second time injected the ion doping energy and 10 * 10 that is included in 500kev
12The condition of dosage under carry out the B boron element and inject.
Preferably, said method for making image sensor is used to make contact-type image sensor.
According to a second aspect of the invention, a kind of imageing sensor of processing according to the said method for making image sensor of first aspect present invention is provided.
Method for making image sensor according to the present invention injects separated into two parts to the ion of original injection isolated area to be realized: the first, the mask by trench region injects isolated area ion injection for the first time; After the ion of accomplishing light sensitive diode injects, do not do mask, directly full wafer injects.Thus; Omitted according to the method for making image sensor of the embodiment of the invention and to have utilized the ion of the injection isolated area that additional mask carries out to inject, reduced the manufacturing cost of imageing sensor and reduce process complexity thereby omitted the additional mask that forms the injection isolated area between the adjacent pixel regions and increase thus.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the sketch map of the injection isolated area between the adjacent pixel regions of imageing sensor.
Fig. 2 schematically shows the flow chart according to the method for making image sensor of the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 2 schematically shows the flow chart according to the method for making image sensor of the embodiment of the invention.
As shown in Figure 2, comprise according to the method for making image sensor of the embodiment of the invention:
First step S1: carry out etching to the active area of imageing sensor.
The second step S2: form trench region (for example shallow trench zone), and the lining of trench region (shallow trench zone) is carried out oxidation;
Third step S3: utilize trench mask to carry out the trench region ion and inject, and utilize trench mask to inject isolated area ion injection for the first time.
For example, the ion injection for the first time of the injection isolated area among the third step S3 is included in the ion doping energy and 6 * 10 of 50kev
12The condition of dosage under carry out B (boron) element and inject.
Can find out that inject and inject this twice ion injection of isolated area ion injection for the first time though third step S3 has carried out the trench region ion, this twice ion is injected and adopted same mask, does not therefore increase the quantity of mask.
The 4th step S4: carry out pixel technology and inject so that light sensitive diode is carried out ion;
The 5th step S5: do not adopt mask, the entire image transducer is carried out full wafer inject, inject to accomplish the injection isolated area ion second time.
For example, preferably, in above-mentioned method for making image sensor, the injection isolated area among said the 5th step S5 ion is for the second time injected the ion doping energy and 14 * 10 that is included in 750kev
12The condition of dosage under carry out the B boron element and inject.
Again for example, preferably, in above-mentioned method for making image sensor, the injection isolated area among said the 5th step S5 ion is for the second time injected the ion doping energy and 10 * 10 that is included in 500kev
12The condition of dosage under carry out the B boron element and inject.
More than described all or part of and ion that in method for making image sensor, relates to and injected relevant step according to the embodiment of the invention.
In the prior art; Carrying out to the etching of the active area of imageing sensor and after forming the shallow trench zone and the lining in shallow trench zone being carried out oxidation; Only utilize trench mask to carry out the trench region ion and inject, and can not utilize trench mask to inject isolated area ion injection for the first time; In addition, prior art also can not carried out full wafer to the entire image transducer and inject (the 5th step S5), but injects through the ion that utilizes an additional mask to inject isolated area 2.
But realize the ion of original injection isolated area injection separated into two parts according to the method for making image sensor of the embodiment of the invention: the first, the mask by trench region injects isolated area ion injection for the first time; After the ion of accomplishing light sensitive diode injects, do not do mask, directly full wafer injects.Thus; Omitted according to the method for making image sensor of the embodiment of the invention and to have utilized the ion of the injection isolated area that additional mask carries out to inject, reduced the manufacturing cost of imageing sensor and reduce process complexity thereby omitted the additional mask that forms the injection isolated area between the adjacent pixel regions and increase thus.
For example, the said method for making image sensor according to the embodiment of the invention can be advantageously used in the manufacturing contact-type image sensor.
According to another preferred embodiment of the invention, the present invention also provides a kind of imageing sensor of processing according to the described method for making image sensor of the above embodiment of the present invention.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (6)
1. method for making image sensor is characterized in that comprising:
First step: carry out etching to the active area of imageing sensor;
Second step: form the shallow trench zone, and the lining in shallow trench zone is carried out oxidation;
Third step: utilize trench mask to carry out the trench region ion and inject, and utilize trench mask to inject isolated area ion injection for the first time;
The 4th step: carry out pixel technology and inject so that light sensitive diode is carried out ion; And
The 5th step: do not adopt mask, the entire image transducer is carried out full wafer inject, inject to accomplish the injection isolated area ion second time.
2. method for making image sensor according to claim 1 is characterized in that, the injection isolated area among said third step S3 ion is for the first time injected the ion doping energy and 6 * 10 that is included in 50kev
12The condition of dosage under carry out boron element and inject.
3. method for making image sensor according to claim 1 and 2 is characterized in that, the injection isolated area among said the 5th step S5 ion is for the second time injected the ion doping energy and 14 * 10 that is included in 750kev
12The condition of dosage under carry out the B boron element and inject.
4. method for making image sensor according to claim 1 and 2 is characterized in that, the injection isolated area among said the 5th step S5 ion is for the second time injected the ion doping energy and 10 * 10 that is included in 500kev
12The condition of dosage under carry out the B boron element and inject.
5. method for making image sensor according to claim 1 and 2 is characterized in that said method for making image sensor is used to make contact-type image sensor.
6. imageing sensor of processing according to the described method for making image sensor of one of claim 1 to 5.
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| CN2012102620175A CN102751303A (en) | 2012-07-26 | 2012-07-26 | Method for producing image sensor and image sensor |
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| CN2012102620175A CN102751303A (en) | 2012-07-26 | 2012-07-26 | Method for producing image sensor and image sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000651A (en) * | 2012-12-24 | 2013-03-27 | 上海宏力半导体制造有限公司 | Forming method of complementary metal oxide semiconductor (CMOS) image sensor |
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| US6177333B1 (en) * | 1999-01-14 | 2001-01-23 | Micron Technology, Inc. | Method for making a trench isolation for semiconductor devices |
| US20050176167A1 (en) * | 2002-12-27 | 2005-08-11 | Hynix Semiconductor Inc. | Method for fabricating image sensor including isolation layer having trench structure |
| US20050179072A1 (en) * | 2003-06-16 | 2005-08-18 | Rhodes Howard E. | Isolation region implant permitting improved photodiode structure |
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| US20080102557A1 (en) * | 2006-10-27 | 2008-05-01 | Dae-Woong Kim | Method of forming an isolation layer and method of manufacturing an image device using the same |
| CN101304035A (en) * | 2007-05-08 | 2008-11-12 | 中芯国际集成电路制造(上海)有限公司 | Image sensor and method for forming the same |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
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Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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