CN102751208B - Monitoring method of rapid thermal processing equipment - Google Patents
Monitoring method of rapid thermal processing equipment Download PDFInfo
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- CN102751208B CN102751208B CN201110095825.2A CN201110095825A CN102751208B CN 102751208 B CN102751208 B CN 102751208B CN 201110095825 A CN201110095825 A CN 201110095825A CN 102751208 B CN102751208 B CN 102751208B
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- thermal annealing
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000012544 monitoring process Methods 0.000 title claims abstract description 24
- 238000012545 processing Methods 0.000 title description 2
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 22
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- 238000003466 welding Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000003070 Statistical process control Methods 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 238000013480 data collection Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 52
- 238000005259 measurement Methods 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
A monitoring method of rapid thermal annealing equipment is characterized in that ion implantation is carried out on product wafers, rapid thermal annealing treatment is carried out on the product wafers, then thermal wave data measurement is carried out on a bonding pad area in a tube core on the product wafers, the thermal wave data are sent into SPC equipment to be treated, so that the state of the rapid thermal annealing equipment can be known timely and accurately, and further the rapid thermal annealing equipment can be regulated and controlled at any time according to requirements, and the results of the rapid thermal annealing process of each batch of wafers are stable and consistent.
Description
Technical field
The present invention relates to a kind of semiconductor making method, especially, relate to the monitoring method to rapid thermal annealers in a kind of semiconductor fabrication.
Background technology
Rapid thermal annealing (rapid thermal anneal, RTA) be usual process steps in semiconductor fabrication, and in order to obtain optimised process effect, the state of equipment is monitored (monitor), and and then regulate and control in time, this, for all rapid thermal annealers (RTAtool), is all absolutely necessary.At present, the common methods that industry carries out monitoring for rapid thermal annealers is: first, bare silicon wafer (bare wafer) is placed in standard and in stable condition ion implantation device (IMP tool), ion implantation is carried out to it, then, bare silicon wafer after ion implantation is moved into rapid thermal annealers, carry out short annealing process, finally, measure the resistivity (resistivity of bare silicon wafer, or heat wave (thermalwave, TW) data Rs).If rapid thermal annealers is stable, resistivity or the heat wave numerical value of so measuring the bare silicon wafer obtained also can be stable.See accompanying drawing 1, show the flow process of conventional method.Bare silicon wafer 100 first carries out ion implantation, then quick thermal annealing process is passed through, measured resistivity or heat wave data, numerical value will be recorded and send into statistical Process Control (Statistical Process Control, SPC) equipment, thus realize the Inspect and control to rapid thermal annealers.
But also there are some problems in said method.First, the state of rapid thermal annealers can not be monitored in time, reason is, conventional monitoring progress be 24 hours or 48 hours once, due to the high production rate of rapid thermal annealers, between the monitoring of twice routine, have into several thousand even wafer of up to ten thousand and be processed, and rapid thermal annealers state when these wafers are processed is not monitored.In addition, it is different for monitoring bare silicon wafer used with the product wafer (product wafer) for the manufacture of integrated circuit, that is, monitoring wafer is not identical for the sensitivity of rapid thermal annealers with product wafer, thus, the time of day that bare silicon wafer used accurately can not reflect rapid thermal annealers is monitored.
Therefore, need to develop a kind of monitoring method being directed to rapid thermal annealers newly, the status data about rapid thermal annealers can be obtained in time and exactly, to make the rapid thermal anneal process result of each batch of wafer stable, consistent.
Summary of the invention
The invention provides a kind of monitoring method of rapid thermal annealers, product wafer is adopted to monitor rapid thermal annealers, thus the status data that can obtain in time and exactly about rapid thermal annealers, ensure stability and the consistency of rapid thermal anneal process.
The invention provides a kind of monitoring method of rapid thermal annealers, comprising:
There is provided multiple product wafer, described product wafer is for the manufacture of required integrated circuit, and each described product wafer all has multiple tube core;
Described tube core comprises welding disking area, and described welding disking area is used for described tube core to be electrically connected with external circuit;
Multiple described product wafer is placed in ion implantation device, carries out ion implantation;
After performing the ion implant, multiple described product wafer is placed in rapid thermal annealers, quick thermal annealing process is carried out to multiple described product wafer;
After quick thermal annealing process, carry out DATA REASONING step;
Wherein, described DATA REASONING step comprises:
After carrying out rapid thermal annealing, that takes out in multiple described product wafer is any one or more, measure the heat wave data of the described welding disking area in the tube core of the described product wafer taken out, then, described heat wave data are sent into statistical Process Control equipment, by the statistics and analysis to described heat wave data, thus monitor the state of described rapid thermal annealers.
In the method for the invention, multiple described product wafer divides different batches to carry out rapid thermal annealing, after each batch of rapid thermal annealing, all carries out described DATA REASONING step.
In the method for the invention, multiple described product wafer divides different batches to carry out rapid thermal annealing, after every 5 or 10 batches of rapid thermal annealings, carries out once described DATA REASONING step.
In the method for the invention, after described rapid thermal annealers often runs 2,3 or 4 hours continuously, carry out once described DATA REASONING step.
The invention has the advantages that: after ion implantation technology is carried out to product wafer, again quick thermal annealing process is carried out to it, by carrying out heat wave DATA REASONING to welding disking area in the tube core on product wafer, and heat wave data feeding SPC equipment is processed, thus the state of rapid thermal annealers can be understood in time and exactly, and then can, as required to the regulation and control that rapid thermal annealers carries out at any time, make the rapid thermal anneal process result of each batch of wafer stable, consistent.
Accompanying drawing explanation
Fig. 1 carries out the conventional method flow process of monitoring for rapid thermal annealers;
Fig. 2 the present invention carries out the method flow of monitoring for rapid thermal annealers;
Fig. 3 the present invention carries out the measurement details of monitoring for rapid thermal annealers.
Embodiment
Feature and the technique effect thereof of technical solution of the present invention is described in detail in conjunction with schematic embodiment referring to accompanying drawing.
The invention provides a kind of monitoring method of rapid thermal annealers, the flow process of monitoring method is see accompanying drawing 2, and measure details see accompanying drawing 3, monitoring method specifically comprises the steps:
First, multiple product wafer 200 is provided.Product wafer (product wafer) 200, for the manufacture of required integrated circuit (IC), prepares to carry out ion implantation; Meanwhile, each product wafer 200 all has multiple tube core 201, and multiple tube core 201 is separated by crisscross scribe line.Also have multiple welding disking area 202 in tube core 201, welding disking area 202 is for being electrically connected tube core 201 with external circuit.
Then, multiple product wafer 200 is placed in ion implantation device (IMP tool), carries out ion implantation.This ion implantation device is standard and in stable condition, and thus it also needs to carry out monitor and forecast timely, to obtain stable ion implantation result, otherwise, can have an impact to the monitoring result of rapid thermal annealers.
Then, after performing the ion implant, product wafer 200 is placed in rapid thermal annealing (RTA) equipment, carries out quick thermal annealing process.The duration of rapid thermal annealing determined by semiconductor device parameter and rapid thermal annealers technological parameter; Batch to be determined by the quantity of product wafer 200 and the batch processing ability of rapid thermal annealing required for rapid thermal anneal process.
After quick thermal annealing process, carry out DATA REASONING step.See accompanying drawing 3, DATA REASONING step specifically comprises: take out any one product wafer 200, the heat wave data (TW) of welding disking area 202 in the tube core 201 of the product wafer 200 that measurement is taken out, then, described heat wave data are sent into statistical Process Control (SPC) equipment, by the statistics and analysis to described heat wave data, thus the state of monitoring rapid thermal annealers.In order to measurement data reflects the state of rapid thermal annealers more exactly, about can selecting upper, middle and lower on the wafer taken out, five regions are measured.
In order to obtain the data about rapid thermal annealers state the most in time, after the rapid thermal anneal process of each batch completes, all can take out one or more product wafer 200 and carry out DATA REASONING, waste flow time can be compared although it is so.If the promptness of Data Collection and whole technological process consuming time between average out, the frequency of carrying out DATA REASONING step can be set according to the concrete condition of rapid thermal annealers and technological process, such as, after carrying out 5 or 10 rapid thermal annealings batch continuously, carry out a DATA REASONING step.Wherein, about measure batch selection, the importance of product and the production capacity of wafer factory can be considered, select by the mantissa of wafer Mission Number, as select numbering mantissa be 0 batch, be exactly every 10 batches measurements one batch; Selecting 0,5, is exactly every 5 batches of measurements one batch; Entirely select 0 ~ 9, products all exactly is all measured.
In actual production process, rapid thermal annealers understands the 24 hours every days of running continuously usually, can select after ion implantation device operates 2,3 or 4 hours continuously, carry out a DATA REASONING step.Meanwhile, the wafer factory that corresponding output is little or semicon industry depressed time, may silicon chip do not produced for a long time, so also can consider temporally to measure, all measure as every batch, or every two days carry out a DATA REASONING step.
In the present invention, after ion implantation technology is carried out to product wafer, then quick thermal annealing process being carried out to it, by carrying out heat wave DATA REASONING to welding disking area in the tube core on product wafer, and heat wave data feeding SPC equipment being processed.Be to product wafer due to the present invention instead of bare silicon wafer is detected, so more directly achieve the state can understanding rapid thermal annealers in time and exactly than conventional method, and then can, as required to the regulation and control that rapid thermal annealers carries out at any time, make the rapid thermal anneal process result of each batch of wafer stable, consistent.
Although the present invention is described with reference to above-mentioned exemplary embodiment, those skilled in the art can know without the need to departing from the scope of the invention and make various suitable change and equivalents to technical solution of the present invention.In addition, can be made by disclosed instruction and manyly may be suitable for the amendment of particular condition or material and not depart from the scope of the invention.Therefore, object of the present invention does not lie in and is limited to as realizing preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacture method thereof will comprise all embodiments fallen in the scope of the invention.
Claims (4)
1. a monitoring method for rapid thermal annealers, is characterized in that, described method comprises:
There is provided multiple product wafer, described product wafer is for the manufacture of required integrated circuit, and each described product wafer all has multiple tube core;
Described tube core comprises welding disking area, and described welding disking area is used for described tube core to be electrically connected with external circuit;
Multiple described product wafer is placed in ion implantation device, carries out ion implantation;
After performing the ion implant, multiple described product wafer is placed in rapid thermal annealers, quick thermal annealing process is carried out to multiple described product wafer;
After quick thermal annealing process, carry out DATA REASONING step;
Wherein, described DATA REASONING step comprises:
After carrying out rapid thermal annealing, that takes out in multiple described product wafer is any one or more, measure the heat wave data of the described welding disking area in the tube core of the described product wafer taken out, then, described heat wave data are sent into statistical Process Control equipment, by the statistics and analysis to described heat wave data, thus monitor the state of described rapid thermal annealers; Concrete condition according to described rapid thermal annealers and technological process arranges the frequency of carrying out described DATA REASONING step, with the promptness of Data Collection and whole technological process consuming time between average out.
2. the monitoring method of rapid thermal annealers as claimed in claim 1, it is characterized in that, multiple described product wafer divides different batches to carry out rapid thermal annealing, after each batch of rapid thermal annealing, all carries out described DATA REASONING step.
3. the monitoring method of rapid thermal annealers as claimed in claim 1, it is characterized in that, multiple described product wafer divides different batches to carry out rapid thermal annealing, after every 5 or 10 batches of rapid thermal annealings, carries out once described DATA REASONING step.
4. the monitoring method of rapid thermal annealers as claimed in claim 1, is characterized in that, after described rapid thermal annealers often runs 2,3 or 4 hours continuously, carry out once described DATA REASONING step.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110095825.2A CN102751208B (en) | 2011-04-17 | 2011-04-17 | Monitoring method of rapid thermal processing equipment |
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| CN201110095825.2A CN102751208B (en) | 2011-04-17 | 2011-04-17 | Monitoring method of rapid thermal processing equipment |
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| CN102751208A CN102751208A (en) | 2012-10-24 |
| CN102751208B true CN102751208B (en) | 2015-08-05 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451529A (en) * | 1994-07-05 | 1995-09-19 | Taiwan Semiconductor Manufacturing Company | Method of making a real time ion implantation metal silicide monitor |
| US6136613A (en) * | 1998-04-21 | 2000-10-24 | United Silicon Incorporated | Method for recycling monitoring control wafers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050134857A1 (en) * | 2003-12-22 | 2005-06-23 | Chartered Semiconductor Manufacturing Ltd. | Method to monitor silicide formation on product wafers |
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- 2011-04-17 CN CN201110095825.2A patent/CN102751208B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5451529A (en) * | 1994-07-05 | 1995-09-19 | Taiwan Semiconductor Manufacturing Company | Method of making a real time ion implantation metal silicide monitor |
| US6136613A (en) * | 1998-04-21 | 2000-10-24 | United Silicon Incorporated | Method for recycling monitoring control wafers |
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| CN102751208A (en) | 2012-10-24 |
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Effective date of registration: 20191112 Address after: 221000 1f-2f, A2 plant, No.26 Chuangye Road, economic and Technological Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu zhongkehanyun Semiconductor Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |