CN102745984A - High-curie-point lead-free PTC (Positive Temperature Coefficient) ceramic material and preparation method thereof - Google Patents
High-curie-point lead-free PTC (Positive Temperature Coefficient) ceramic material and preparation method thereof Download PDFInfo
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- CN102745984A CN102745984A CN2012102613843A CN201210261384A CN102745984A CN 102745984 A CN102745984 A CN 102745984A CN 2012102613843 A CN2012102613843 A CN 2012102613843A CN 201210261384 A CN201210261384 A CN 201210261384A CN 102745984 A CN102745984 A CN 102745984A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 58
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 34
- 238000000498 ball milling Methods 0.000 claims description 29
- 239000000843 powder Substances 0.000 claims description 29
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 14
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 claims description 7
- 238000005469 granulation Methods 0.000 claims description 7
- 230000003179 granulation Effects 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000001914 filtration Methods 0.000 description 10
- 229910000807 Ga alloy Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000192 social effect Effects 0.000 description 1
- 238000003836 solid-state method Methods 0.000 description 1
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Abstract
The invention provides a high-curie-point lead-free PTC (Positive Temperature Coefficient) ceramic material and a preparation method of the ceramic material. The ceramic material mainly comprises Ba1-x(K0.5Bi0.5)xTiO3, wherein x is more than or equal to 0.05 and smaller than or equal to 0.3. The high-curie-point PTC ceramic material provided by the invention does not contain lead, so damages of resistor devices to the human bodies and the environment in manufacturing and using processes are avoided; the processes of oxidation and then reduction are adopted, so semi-conduction of the material is achieved without donor doping; and PTC heat-sensitive materials with different curie points can be prepared through controlling the doping quantities of KBT (KBiTiO).
Description
Technical field
The present invention relates to a kind of semiconductor material, particularly a kind ofly meet K unleaded, low-resistance
0.5Bi
0.5TiO
3(KBT) high-concentration dopant BaTiO
3(BT) high curie point lead-free PTC thermistor ceramic material and preparation method thereof.
Background technology
BaTiO
3Base positive temperature coefficient resistance (positive temperature coefficient resistance is called for short PTCR) stupalith is a kind of Ferro-Electric Semiconductor material, is development in recent years one of novel electron material rapidly.Because the PTCR stupalith has " switch " function automatically such as temperature sensitive, current limliting, time-delay, has been widely used in every field such as telecommunications, aerospace, automotive industry, household electrical appliance.
Yet, but the piezoelectricity of current practicability and ferroelectric material mainly are with the mobile agent of Pb as Curie temperature, realize with the crystallographic site of Pb displacement Ba.This series products is because its satisfactory stability property, repeatability and higher Curie temperature have obtained application widely.But contain the Pb oxide compound inevitably because a variety of causes flows into living environment and physical environment, thereby human body and physical environment are worked the mischief.Because current various countries are to the improving constantly of environmental requirement, PTCR material unleaded become a kind of inexorable trend.Environmentally friendly PTCR thermal sensitive ceramic material has far-reaching social effect and economic implications.
It is BT-KBT that present various countries researchist studies one of maximum system, but focuses mostly in KBT (K
0.5Bi
0.5TiO
3) to BT (BaTiO
3) low concentration doping (generally being no more than 5%).
Summary of the invention
The object of the present invention is to provide a kind of high curie point lead-free PTC stupalith and preparation method thereof.
For achieving the above object, the present invention has adopted following technical scheme.
A kind of high curie point lead-free PTC stupalith, this stupalith comprises following component:
Ba
1-x(K
0.5Bi
0.5)
xTiO
3
, 0.05≤x≤0.3 wherein.
The preparation method of above-mentioned high curie point lead-free PTC stupalith may further comprise the steps:
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 350-500r/min, behind the ball milling 80-100 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 2-3h down at 900-950 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 2-3h with mixture B down at 1100-1150 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and M according to following prescription prepare burden mixture C:
Ba
1-x(K
0.5Bi
0.5)
xTiO
3+yM
, 0.05≤x≤0.3,0≤y≤0.05 wherein; Y got 0 o'clock; Sintering temperature can be higher, and M be the minor compound additive as sintering agent, glassy phase and strongthener temperature factor, in mixture C behind the adding deionized water under the rotating speed of 350-500r/min ball milling 4h; 80-100 ℃ of oven dry down, granulation then, moulding get idiosome behind the ball milling;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen, ℃ following insulation 1-2h of 800-1100, obtain high curie point lead-free PTC stupalith.
Said M is one or several the mixture that contains in the oxide compound of Si, Al, Ti or Mn.
The volume(tric)fraction of oxygen is 0.5-4% in the said argon gas that is mixed with trace oxygen.
The high curie point lead-free PTC stupalith that the present invention prepares can reach following parameter request: Tc=150-230 ℃ through the resistive material Characteristics Detection; R
25≤3.5k Ω; Lg (R
Max/ R
Min)>=3.0.Characteristics Detection adopts the In-Ga alloy as electrode, records the room temperature resistance and the resistance-temperature curve of components and parts.Can select other electrode materialss (like aluminium electrode, nickel electrode etc.) in the actual production for use.
The preparation method of high curie point lead-free PTC stupalith according to the invention has the following advantages: 1. adopt conventional solid-state method to prepare powder, particle does not have reunion, fillibility is good, cost is low, output is big, preparation technology is simple, easy control of reaction conditions.2. through KBT the high density (5% ~ 30%) of BT is mixed to realize the raising of Curie temperature.3. sample carries out sintering in argon gas atmosphere, under the situation of not carrying out donor doping, realizes resistance lowering, the semiconductor of sample.4. the sample after the reduction is at Ar and O
2Mixed gas in, reoxidize.Through the ratio of each component in the control mixed gas, execute the oxygen temperature, execute conditions such as oxygen time, with the liftdrag of control material.5. the high curie point PTC stupalith of the present invention's preparation is not leaded, has avoided resistance element in manufacturing and use, human body and environment to be produced harm.The technology that adopts reduction to reoxidize has realized the semiconductor of material under the situation of not carrying out donor doping.And can be through to the control of KBT doping, with the preparation of the PTC thermo-sensitive material of realizing different Curie temperatures.The preparation method of high curie point lead-free PTC stupalith 6. according to the invention can obtain high-purity phase composite, stable performance, high curie point PTC thermistor that safety is high; The doping scope of KBT is wide in the prescription of principal constituent; Can adjust accordingly according to production technique in the actual application, handiness is big.
Embodiment
Below in conjunction with embodiment the present invention is described further.
Embodiment 1
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 400r/min, and the ball milling after-filtration is removed ballstone, then 80 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 2h down at 925 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 3h with mixture B down at 1100 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and SiO
2According to prescription Ba
1-x(K
0.5Bi
0.5)
xTiO
3+ ySiO
2Preparing burden obtains mixture C, x=0.05 wherein, y=0.05; In mixture C, add behind a certain amount of deionized water ball milling 4h under the rotating speed of 400r/min, the ball milling after-filtration is removed ballstone, then under 80 ℃ through oven dry in 6 hours; The oven dry back adds a certain amount of PVA granulation, moulding gets idiosome; Idiosome is the disk type, and the diameter of disk is 12mm, and thickness is 3.5-4.0mm;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen (volume(tric)fraction of oxygen is 2%), 900 ℃ down insulation 1h reoxidize so that grain boundary oxidation and form the crystal boundary potential barrier and obtain high curie point lead-free PTC stupalith;
6) two sides with the lead-free PTC stupalith polishes, and is coated with the In-Ga alloy as electrode;
7) the PTC stupalith be will obtain after the step 6) and resistance temperature curve measurement, the performance of resulting stupalith: Tc (Curie temperature)=150 ℃ carried out; R
25=3.5k Ω; Lg (R
Max/ R
Min)=3.25.
Embodiment 2
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 350r/min, and the ball milling after-filtration is removed ballstone, then 90 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 3h down at 930 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 2h with mixture B down at 1130 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and SiO
2According to prescription Ba
1-x(K
0.5Bi
0.5)
xTiO
3+ ySiO
2Preparing burden obtains mixture C, x=0.07 wherein, y=0.05; In mixture C, add behind a certain amount of deionized water ball milling 4h under the rotating speed of 350r/min, the ball milling after-filtration is removed ballstone, then under 100 ℃ through oven dry in 4 hours; The oven dry back adds a certain amount of PVA granulation, moulding gets idiosome; Idiosome is the disk type, and the diameter of disk is 12mm, and thickness is 3.5-4.0mm;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen (volume(tric)fraction of oxygen is 3%), 1000 ℃ down insulation 1h reoxidize so that grain boundary oxidation and form the crystal boundary potential barrier and obtain high curie point lead-free PTC stupalith;
6) two sides with the lead-free PTC stupalith polishes, and is coated with the In-Ga alloy as electrode;
7) the PTC stupalith be will obtain after the step 6) and resistance temperature curve measurement, the performance of resulting stupalith: Tc=170 ℃ carried out; R
25=2.5k Ω; Lg (R
Max/ R
Min)=3.10.
Embodiment 3
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 500r/min, and the ball milling after-filtration is removed ballstone, then 100 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 2h down at 950 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 3h with mixture B down at 1150 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and SiO
2According to prescription Ba
1-x(K
0.5Bi
0.5)
xTiO
3+ ySiO
2Preparing burden obtains mixture C, x=0.10 wherein, y=0.05; In mixture C, add behind a certain amount of deionized water ball milling 4h under the rotating speed of 500r/min, the ball milling after-filtration is removed ballstone, then under 90 ℃ through oven dry in 5 hours; The oven dry back adds a certain amount of PVA granulation, moulding gets idiosome; Idiosome is the disk type, and the diameter of disk is 12mm, and thickness is 3.5-4.0mm;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen (volume(tric)fraction of oxygen is 4%), 1100 ℃ down insulation 1h reoxidize so that grain boundary oxidation and form the crystal boundary potential barrier and obtain high curie point lead-free PTC stupalith;
6) two sides with the lead-free PTC stupalith polishes, and is coated with the In-Ga alloy as electrode;
7) the PTC stupalith be will obtain after the step 6) and resistance temperature curve measurement, the performance of resulting stupalith: Tc=178 ℃ carried out; R
25=2.9k Ω; Lg (R
Max/ R
Min)=3.15.
Embodiment 4
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 450r/min, and the ball milling after-filtration is removed ballstone, then 90 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 3h down at 900 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 2h with mixture B down at 1120 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and SiO
2According to prescription Ba
1-x(K
0.5Bi
0.5)
xTiO
3+ ySiO
2Preparing burden obtains mixture C, x=0.13 wherein, y=0.05; In mixture C, add behind a certain amount of deionized water ball milling 4h under the rotating speed of 450r/min, the ball milling after-filtration is removed ballstone, then under 90 ℃ through oven dry in 5 hours; The oven dry back adds a certain amount of PVA granulation, moulding gets idiosome; Idiosome is the disk type, and the diameter of disk is 12mm, and thickness is 3.5-4.0mm;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen (volume(tric)fraction of oxygen is 0.5%), 800 ℃ down insulation 2h reoxidize so that grain boundary oxidation and form the crystal boundary potential barrier and obtain high curie point lead-free PTC stupalith;
6) two sides with the lead-free PTC stupalith polishes, and is coated with the In-Ga alloy as electrode;
7) the PTC stupalith be will obtain after the step 6) and resistance temperature curve measurement, the performance of resulting stupalith: Tc=201 ℃ carried out; R
25=2.8k Ω; Lg (R
Max/ R
Min)=3.30.
Embodiment 5
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 450r/min, and the ball milling after-filtration is removed ballstone, then 90 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 3h down at 900 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 2h with mixture B down at 1140 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and SiO
2According to prescription Ba
1-x(K
0.5Bi
0.5)
xTiO
3+ ySiO
2Preparing burden obtains mixture C, x=0.25 wherein, y=0.02; In mixture C, add behind a certain amount of deionized water ball milling 4h under the rotating speed of 450r/min, the ball milling after-filtration is removed ballstone, then under 90 ℃ through oven dry in 5 hours; The oven dry back adds a certain amount of PVA granulation, moulding gets idiosome; Idiosome is the disk type, and the diameter of disk is 12mm, and thickness is 3.5-4.0mm;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen (volume(tric)fraction of oxygen is 0.5%), 800 ℃ down insulation 2h reoxidize so that grain boundary oxidation and form the crystal boundary potential barrier and obtain high curie point lead-free PTC stupalith;
6) two sides with the lead-free PTC stupalith polishes, and is coated with the In-Ga alloy as electrode;
7) the PTC stupalith be will obtain after the step 6) and resistance temperature curve measurement, the performance of resulting stupalith: Tc=211 ℃ carried out; R
25=2.9k Ω; Lg (R
Max/ R
Min)=3.20.
Among the embodiment 1-5, the usage ratio of deionized water, ballstone is in the ball milling:
Material: ball: water=1: (1 ~ 1.4): (0.8 ~ 1.2) this ratio can change as one sees fit, and is very faint to final result's influence.
Claims (4)
1. high curie point lead-free PTC stupalith, it is characterized in that: this stupalith comprises following component:
Ba
1-x(K
0.5Bi
0.5)
xTiO
3
, 0.05≤x≤0.3 wherein.
2. one kind prepares high curie point lead-free PTC method of ceramic material according to claim 1, it is characterized in that: may further comprise the steps:
1) at first with K
2CO
3, Bi
2O
3And TiO
2According to K
2CO
3: Bi
2O
3: TiO
2The mixed in molar ratio of=1:1:4 gets mixture A, then with BaCO
3And TiO
2Mixed in molar ratio according to 1:1 gets mixture B, in mixture A and mixture B, adds behind the deionized water respectively ball milling 4h under the rotating speed at 350-500r/min, behind the ball milling 80-100 ℃ of oven dry down;
2), mixture A is incubated the synthetic K of 2-3h down at 900-950 ℃ through after the step 1)
0.5Bi
0.5TiO
3Powder is incubated the synthetic BaTiO of 2-3h with mixture B down at 1100-1150 ℃
3Powder;
3) with K
0.5Bi
0.5TiO
3Powder, BaTiO
3Powder and M according to following prescription prepare burden mixture C:
Ba
1-x(K
0.5Bi
0.5)
xTiO
3+yM
0.05≤x≤0.3 wherein; 0≤y≤0.05, M is the minor compound additive as sintering agent, glassy phase and strongthener temperature factor, in mixture C, adds behind the deionized water ball milling 4h under the rotating speed of 350-500r/min; 80-100 ℃ of oven dry down, granulation then, moulding get idiosome behind the ball milling;
4) with idiosome in feeding the atmosphere furnace of argon gas in 1300 ℃ of insulation 2h, obtain the ceramics sample of semiconductor;
5) with the ceramics sample of semiconductor in being mixed with the argon gas of trace oxygen, ℃ following insulation 1-2h of 800-1100, obtain high curie point lead-free PTC stupalith.
3. according to the said a kind of preparation high curie point lead-free PTC method of ceramic material of claim 2, it is characterized in that: said M is one or several the mixture that contains in the oxide compound of Si, Al, Ti or Mn.
4. according to the said a kind of preparation high curie point lead-free PTC method of ceramic material of claim 2, it is characterized in that: the volume(tric)fraction of oxygen is 0.5-4% in the said argon gas that is mixed with trace oxygen.
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|---|---|---|---|---|
| CN104030679A (en) * | 2014-06-27 | 2014-09-10 | 陕西科技大学 | BaTiO3-based lead-free PTC (positive temperature coefficient) thermistor ceramic material sintered in reducing atmosphere and preparation method thereof |
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| CN1814570A (en) * | 2005-02-01 | 2006-08-09 | 四川大学 | Bi.Na.K.Li Ag titanate series lead-free piezoelectric ceramics |
| CN101213155A (en) * | 2005-04-28 | 2008-07-02 | 日立金属株式会社 | Semiconductor porcelain composition and method of producing the same |
| CN101276659A (en) * | 2007-03-26 | 2008-10-01 | 太阳诱电株式会社 | Dielectric ceramics and multi-layer ceramic capacitor |
| CN102177105A (en) * | 2008-10-16 | 2011-09-07 | 韩国Ceramic技术院 | Lead free ceramic composition for PTC thermistor and PTC ceramic thermistor thereby |
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2012
- 2012-07-26 CN CN201210261384.3A patent/CN102745984B/en not_active Expired - Fee Related
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|---|---|---|---|---|
| CN85100513A (en) * | 1985-04-01 | 1986-08-13 | 中国科学院上海硅酸盐研究所 | Bi-Na-Ba-TiO 3 series piezoelectric ceramic material for ultrasonic devices |
| CN1814570A (en) * | 2005-02-01 | 2006-08-09 | 四川大学 | Bi.Na.K.Li Ag titanate series lead-free piezoelectric ceramics |
| CN101213155A (en) * | 2005-04-28 | 2008-07-02 | 日立金属株式会社 | Semiconductor porcelain composition and method of producing the same |
| CN101276659A (en) * | 2007-03-26 | 2008-10-01 | 太阳诱电株式会社 | Dielectric ceramics and multi-layer ceramic capacitor |
| CN102177105A (en) * | 2008-10-16 | 2011-09-07 | 韩国Ceramic技术院 | Lead free ceramic composition for PTC thermistor and PTC ceramic thermistor thereby |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104030679A (en) * | 2014-06-27 | 2014-09-10 | 陕西科技大学 | BaTiO3-based lead-free PTC (positive temperature coefficient) thermistor ceramic material sintered in reducing atmosphere and preparation method thereof |
| CN104030679B (en) * | 2014-06-27 | 2015-10-28 | 陕西科技大学 | A kind of BaTiO of reducing atmosphere sintering 3base lead-free PTC thermistor ceramic material and preparation method thereof |
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Effective date of registration: 20201228 Address after: 518000 No.6 Qinglong Road, Qinglong Road, Qinghua community, Longhua street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Pengbo Information Technology Co.,Ltd. Address before: No. 1, Weiyang District university garden, Xi'an, Shaanxi Province, Shaanxi Patentee before: SHAANXI University OF SCIENCE & TECHNOLOGY Effective date of registration: 20201228 Address after: 224000 Qingyang Road (within Qingdun Office), Nanyang Town, Tinghu District, Yancheng City, Jiangsu Province (8) Patentee after: Yancheng Qinglong Jinbang water Co.,Ltd. Address before: 518000 No.6 Qinglong Road, Qinglong Road, Qinghua community, Longhua street, Longhua District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Pengbo Information Technology Co.,Ltd. |
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Correction item: Patentee|Address Correct: Yancheng Qingdun Jinbang water Co.,Ltd.|224000 Qingyang Road, Nanyang Town, Tinghu District, Yancheng City, Jiangsu Province (in Qingdun Office) (8) False: Yancheng Qinglong Jinbang water Co.,Ltd.|224000 Qingyang Road, Nanyang Town, Tinghu District, Yancheng City, Jiangsu Province (in Qingdun Office) (8) Number: 02-02 Volume: 37 |
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