CN102738693A - Waveguide mode-locked laser - Google Patents
Waveguide mode-locked laser Download PDFInfo
- Publication number
- CN102738693A CN102738693A CN2012101465331A CN201210146533A CN102738693A CN 102738693 A CN102738693 A CN 102738693A CN 2012101465331 A CN2012101465331 A CN 2012101465331A CN 201210146533 A CN201210146533 A CN 201210146533A CN 102738693 A CN102738693 A CN 102738693A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- laser
- gain
- mode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a waveguide mode-locked laser, comprising a semiconductor saturable absorption mirror, a waveguide grain medium, a waveguide grating and a pumping source. The semiconductor saturable absorption mirror and the waveguide grating are respectively arranged at the both ends of the waveguide grain medium; and the pumping source is arranged above the waveguide grating. According to the waveguide mode-locked laser provided by the invention, the semiconductor saturable absorption mirror is fixedly arranged at one end of the grain medium by using a special means as a cavity mirror in a laser cavity; and furthermore, the grating is written into a waveguide channel on a doped substrate in a point-to-point manner by using a femtosecond micromachining system, and the passive mode locking is realized by utilizing dispersion compensation of the grating and characteristics of the semiconductor saturable absorption mirror.
Description
Technical field
The present invention relates to laser technology field, specifically be a kind of be the psec laser with active-passive lock mould of the all-wave guide structure of gain media based on waveguide.
Background technology
Along with the development of laser technology and optical waveguide technique, effectively promoted the development of integrated optics, for certain basis has been established in the generation of optical integrated chip; But the integrated ultrashort pulse source of Present Attitude mainly contains fiber optic source and semiconductor light source; Semiconductor light source is because its stability is poor, and with optical fiber coupling difficulty, fiber optic source is bigger in optical integrated device; Be difficult to adapt to the development of optical integrated device, more can not adapt to the generation of optical integrated chip.To waveguide is that the laser of gain media has caused researcher's strong interest; 2002; J.R.Lee seminar is through adopting semiconductor laser array to long 60mm, and wide 11mm, thickness are that the Nd:YAG gain media of 200 μ m carries out pumping; Obtain the flashlight of output 150W, light light transfer ratio reaches 35%.Through positive-branch confocal unstable resonator, brightness output increases by 26 times simultaneously, and power only reduces by 12%.At home, people such as Zhang Xiaoxia has carried out studying (patent publication No.: 1752778) about optical waveguide laser and amplifier.
The advantage of waveguide mode-locked laser is Highgrade integration; To effectively promote the light development of integration technology; Regrettably present ultrashort ultrafast mode-locked laser, except the development realization of circular waveguides such as optical fiber, present waveguide laser exists the more problem of discrete component; For example in waveguide laser, just adopting waveguide device is gain media; And pumping and other devices adopt is outer solid or optical fibre device, has reduced the high integration of waveguide mode-locked laser to a great extent, also is provided with obstacle for the light development of integration technology.
Summary of the invention
In order to solve existing technical problem in the background technology; The present invention proposes a kind of waveguide mode-locked laser; End at gain media adopts special means that semiconductor saturable absorbing mirror is fixed; As a chamber mirror in the laser cavity, adopt the femtosecond micro-machining system grating being write waveguide channels in addition for point-to-point at the bottom of the dopant, utilize the dispersion compensation of grating and the characteristic of semi-conductive saturable absorption speculum to realize passive mode locking.
Technical solution of the present invention is: the waveguide mode-locked laser; It is characterized in that: said laser comprises semiconductor saturable absorption speculum, waveguide gain media, waveguide optical grating and pumping source; Said semiconductor saturable absorbing mirror and waveguide optical grating are located at the two ends of waveguide gain media respectively, and said pumping source is located on the waveguide optical grating.
Above-mentioned waveguide gain media comprises the gain material of mixing in the substrate that do not have to mix and the substrate.
Above-mentioned waveguide gain media is in the femtosecond system of processing, to utilize the non-linear variations in refractive index of inducing of femtosecond laser; Produce the laser gain waveguide, femtosecond laser carries out beam shaping and microcobjective through slit system and focuses on dopant material inside and produced refractive index and increase and the gain waveguide of formation.
Above-mentioned waveguide optical grating is the waveguide optical grating that in the femtosecond system of processing, has point-to-point making on the crystalline substrate of Brewster's angle, and said waveguide optical grating carries out dispersion compensation to whole system.
The semiconductor laser array that above-mentioned pumping source is made up of 8 laser diodes.
Above-mentioned semiconductor laser array comprises semiconductor laser diode carrier (41), laser diode (42), the reflective film (43) of band slit and 98% high reflective film; Said semiconductor laser diode carrier is a plurality of, and said laser diode is arranged in the semiconductor laser diode carrier, and is corresponding one by one with the semiconductor laser diode carrier, and said a plurality of semiconductor laser diode carriers are arranged on the reflective film of band slit.
Above-mentioned gain material is doped rare earth element or the gain material of mixing ytterbium.
Above-mentioned waveguide gain media thickness is 220 μ m, and wide is 11mm, and long is 60mm.
Above-mentioned semiconductor saturable absorption speculum is the output that semiconductor saturable absorption speculum is fixed on gain media through accurate controlling platform.
The invention provides a kind of passive mode locking surface waveguide laser development means, the waveguide light source of Highgrade integration is provided at the light integration field for the waveguide mode-locked laser with Highgrade integration;
The present invention has mainly considered the Highgrade integration problem of waveguide mode-locked laser; Otherwise address the diffraction loss that causes owing to operation material thickness (being 100 μ m magnitudes generally speaking) increase; Through directly on the end face of gain media the growing semiconductor saturable absorber with increase the identical waveguide optical grating of size at an other end face; Reduced diffraction loss, improved integrated.
Description of drawings
Fig. 1 is the overall structure sketch map of waveguide mode-locked laser of the present invention;
Fig. 2 is the pumping configuration sketch map of waveguide mode-locked laser of the present invention;
Fig. 3 is the cavity resonator structure sketch map of waveguide mode-locked laser of the present invention;
Embodiment
Referring to Fig. 1, waveguide mode-locked laser of the present invention, it mainly consists of 4 parts, semiconductor saturable absorption speculum 1, waveguide gain media 2, waveguide optical grating 3, laser diode array pumping source 4; Semiconductor saturable absorbing mirror 1 and waveguide optical grating 3 are located at the two ends of waveguide gain media 2 respectively, and laser diode array pumping source 4 is located on the waveguide optical grating.Semiconductor saturable absorption speculum 1 is through accurate controlling platform semiconductor saturable absorption speculum 1 to be fixed to waveguide gain media 2 outputs; And with special glue with semiconductor saturable absorption speculum 1; Thereby realized that saturable absorption speculum 1 and waveguide are integral, and satisfy the structure that all-wave is led.
Referring to Fig. 2, Fig. 3, waveguide gain media 2 are materials of a doping; Its thickness is 220 μ m, and wide is 11mm, and long is 60mm; The substrate 22 of bottom for not having to mix, the gain material 21 of top for mixing utilized the non-linear variations in refractive index of inducing of femtosecond laser in the femtosecond system of processing; Produce the laser gain waveguide; Femtosecond laser carries out beam shaping and microcobjective through slit system and focuses on dopant material inside and produced the refractive index increase, thus formation gain waveguide, and the processing of system of processing has obtained waveguide gain media as shown in Figure 3.
Referring to Fig. 3, waveguide optical grating 3 is the waveguide optical gratings 32 that adopt the point-to-point making on the crystalline substrate with Brewster's angle 31 of femtosecond laser skilled worker system, and the chromatic dispersion of this grating and bandwidth are to calculate through strict, and whole system is carried out dispersion compensation.
Referring to Fig. 2; The semiconductor laser array that pumping source 4 is made up of 8 laser diodes; Be used for the pump waveguide gain media; Its pump mode that adopts is a profile pump,, it is mainly formed and mainly contains semiconductor laser diode carrier 41, laser diode 42, the reflective film 43 of band slit and 98% high reflective film 44.Because waveguide is thinner, be generally 200-400 μ m, cause for gain media lowlyer to the utilance of the pump light of one way, be coated with 98% high reflective film in order to solve the bottom that is employed in gain media.Thereby reach the purpose that round trip absorbs, improve the absorbability of pump light.
Claims (10)
1. waveguide mode-locked laser; It is characterized in that: said laser comprises semiconductor saturable absorption speculum, waveguide gain media, waveguide optical grating and pumping source; Said semiconductor saturable absorbing mirror and waveguide optical grating are located at the two ends of waveguide gain media respectively, and said pumping source is located on the waveguide optical grating.
2. waveguide mode-locked laser according to claim 1 is characterized in that: said waveguide gain media comprises the laser glass of doped rare earth element or the solid material of laser crystal.
3. waveguide mode-locked laser according to claim 2; It is characterized in that: said gain waveguide is to utilize the non-linear variations in refractive index of inducing of femtosecond laser in the femtosecond system of processing; Produce the laser gain waveguide, femtosecond laser carries out beam shaping and microcobjective through slit system and focuses on dopant material inside and produced refractive index and increase and the gain waveguide of formation.
4. waveguide mode-locked laser according to claim 2 is characterized in that: said gain waveguide can be at the inner or surperficial waveguiding structure of making of laser medium by ion injection mode, ion-exchange method, photolithographicallpatterned.
5. waveguide mode-locked laser according to claim 3; It is characterized in that: said waveguide optical grating is the waveguide optical grating that in the femtosecond system of processing, has point-to-point making on the crystalline substrate of Brewster's angle, and said waveguide optical grating carries out dispersion compensation to whole system.
6. waveguide mode-locked laser according to claim 1 is characterized in that: said grating is the chirped fiber grating that is connected in the gain waveguide, perhaps chirped mirror.
7. waveguide mode-locked laser according to claim 5 is characterized in that: said semiconductor laser array comprises semiconductor laser diode carrier, laser diode, the reflective film of band slit and 98% high reflective film; Said semiconductor laser diode carrier is a plurality of, and said laser diode is arranged in the semiconductor laser diode carrier, and is corresponding one by one with the semiconductor laser diode carrier, and said a plurality of semiconductor laser diode carriers are arranged on the reflective film of band slit.
8. according to the arbitrary described waveguide mode-locked laser of claim 2-6, it is characterized in that: said gain material is the gain material of mixing ytterbium, er-doped, mixing holmium, mixing thulium or mix yttrium.
9. waveguide mode-locked laser according to claim 7 is characterized in that: said gain waveguide diameter is 0.5 micron-200 microns, and said gain waveguide is single mode ripple or multimode waveguide.
10. waveguide mode-locked laser according to claim 8 is characterized in that: said semiconductor saturable absorption speculum be fixed on the output of gain media through accurate controlling platform or one millimeter of waveguide side distance with interior place; Said saturable absorbing mirror is semiconductor saturated absorption mirror or CNT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101465331A CN102738693A (en) | 2012-05-11 | 2012-05-11 | Waveguide mode-locked laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101465331A CN102738693A (en) | 2012-05-11 | 2012-05-11 | Waveguide mode-locked laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102738693A true CN102738693A (en) | 2012-10-17 |
Family
ID=46993722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101465331A Pending CN102738693A (en) | 2012-05-11 | 2012-05-11 | Waveguide mode-locked laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102738693A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107046223A (en) * | 2016-12-30 | 2017-08-15 | 中国科学院西安光学精密机械研究所 | A kind of turning locked mode waveguide laser |
| CN108963732A (en) * | 2018-07-06 | 2018-12-07 | 中国科学院西安光学精密机械研究所 | Waveguide passive Q-regulaitng laser and preparation method thereof |
| CN113964631A (en) * | 2021-10-20 | 2022-01-21 | 华中科技大学 | On-chip solid laser of optical pump |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752778A (en) * | 2005-10-18 | 2006-03-29 | 电子科技大学 | S shaped erbium ytterbium codoped phosphate high gain optical waveguide, waveguide laser and optical waveguide amplifier |
| CN101636886A (en) * | 2007-01-18 | 2010-01-27 | 埃皮晶体有限公司 | Pulsed laser source based on frequency translation |
-
2012
- 2012-05-11 CN CN2012101465331A patent/CN102738693A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752778A (en) * | 2005-10-18 | 2006-03-29 | 电子科技大学 | S shaped erbium ytterbium codoped phosphate high gain optical waveguide, waveguide laser and optical waveguide amplifier |
| CN101636886A (en) * | 2007-01-18 | 2010-01-27 | 埃皮晶体有限公司 | Pulsed laser source based on frequency translation |
Non-Patent Citations (3)
| Title |
|---|
| A.FAULSTICH ET AL.: "Face pumping of thin, solid-state slab lasers with laser diodes", 《OPTICS LETTERS》, vol. 21, no. 8, 15 April 1996 (1996-04-15), XP000589932 * |
| J. R. LEE ET AL.: "High-average-power Nd:YAG planar waveguide laser that is face pumped by 10 laser diode bars", 《OPTICS LETTERS》, vol. 27, no. 7, 1 April 2002 (2002-04-01), XP001115253 * |
| MARKUS POLLNAU ET AL.: "Optical waveguides in laser crystals", 《C.R.PHYSIQUE》, vol. 8, 8 August 2006 (2006-08-08) * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107046223A (en) * | 2016-12-30 | 2017-08-15 | 中国科学院西安光学精密机械研究所 | A kind of turning locked mode waveguide laser |
| CN108963732A (en) * | 2018-07-06 | 2018-12-07 | 中国科学院西安光学精密机械研究所 | Waveguide passive Q-regulaitng laser and preparation method thereof |
| CN108963732B (en) * | 2018-07-06 | 2020-01-31 | 中国科学院西安光学精密机械研究所 | Waveguide passive Q-switched laser and manufacturing method thereof |
| CN113964631A (en) * | 2021-10-20 | 2022-01-21 | 华中科技大学 | On-chip solid laser of optical pump |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102239434B (en) | Highly rare-earth-doped optical fibers for fiber lasers and amplifiers | |
| CN102208738B (en) | Graphene passive mode-locked fiber laser | |
| CN202183551U (en) | Single longitudinal mode and narrow line width fiber laser | |
| US20070133626A1 (en) | Mid-infrared raman fiber laser system | |
| CN104934850A (en) | A tunable optical micro-cavity Raman laser and a tunable optical micro-cavity doped laser | |
| CN107154576A (en) | 2 μm of dissipative solitons mode locked fiber lasers based on SMF SIMF GIMF SMF optical fiber structures | |
| CN103208728A (en) | High-power pulse per second type ytterbium-doped all-fiber laser system | |
| CN103531994A (en) | Same-bandwidth pumping single-frequency optical fiber laser using erbium-doped quartz optical fiber as gain medium | |
| CN105720461A (en) | 2-micron wave band tunable thulium-holmium codoped mode-locking all-fiber laser | |
| CN102244351B (en) | Manufacturing method of passive mode-locking device based on SCNTs (singlewalled carbon nano tubes) | |
| CN102738693A (en) | Waveguide mode-locked laser | |
| CN102496842A (en) | High pulse repetition frequency mode-locking optical fiber laser | |
| CN202977961U (en) | Waveguide mode-locked laser | |
| CN103794974A (en) | Novel fiber amplifier | |
| CN1581607A (en) | Wavelength tunable dual-cladding-layer optical fiber laser | |
| CN109842013A (en) | A kind of saturable absorption device, preparation method and fiber pulse laser | |
| CN106549291B (en) | The fiber laser system that Q-switch and mode-locking and continuous locking mold can be switched can be achieved | |
| CN101969174A (en) | Tunable all-fiber mode-locked laser | |
| CN105337148A (en) | All-fiber gas raman laser device used for generating two-micrometer lasers | |
| CN102025096A (en) | Multi-wavelength mode-locked laser | |
| CN202059040U (en) | Passively Q-switched fiber laser for linear chamber | |
| CN204927802U (en) | Tunable optical microcavity raman laser and tunable optical microcavity doping laser instrument | |
| CN110600984A (en) | Wavelength-adjustable passive mode-locking fiber laser | |
| CN101329490A (en) | High power frequency changer of small core radial bundling type high non-linear photon crystal optical fiber | |
| CN203218698U (en) | High-power picosecond pulse type ytterbium-doped all-fiber laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121017 |