CN102738349A - Package substrate - Google Patents
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- CN102738349A CN102738349A CN2011104076294A CN201110407629A CN102738349A CN 102738349 A CN102738349 A CN 102738349A CN 2011104076294 A CN2011104076294 A CN 2011104076294A CN 201110407629 A CN201110407629 A CN 201110407629A CN 102738349 A CN102738349 A CN 102738349A
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Abstract
The invention relates to a package substrate which comprises a bare copper flat heat pipe and a coating arranged on the outer surface of the flat heat pipe, wherein the coating consists of a bright copper layer, a nickel-plated layer, a silver-plated layer and an anti-oxidization layer which are sequentially arranged from inside to outside. The package substrate has high reflection rate, a semiconductor can be directly welded on the package substrate, the problems that the chip (semiconductor) has overhigh heat density and can not fast radiate heat can be fundamentally solved, the service life and properties of the chip can be ensured, thus overcoming the bias that the flat heat pipe can not be applied to the field of packaging the semiconductor for a long term.
Description
Technical field
The present invention relates to a kind of base plate for packaging, relate in particular to a kind of base plate for packaging that is applicable to semicon industry.
Background technology
The development trend of semiconductor packages is subminaturization and multicore sheetization; Concerning chip, temperature is the principal element of restriction its life-span and performance, the heat that existing in the market base plate for packaging all can't be derived light source fully to a certain extent and produced; Especially for the integrated high-power light source; But the little power of size of chip is big on the one hand, and density of heat flow rate is bigger, and heat distribution is inhomogeneous; Spacing between the chip is very little on the other hand, and heat is concentrated on the substrate, can't effectively derive.Therefore, density of heat flow rate is too high to be restriction semiconductor packages development key problem, and the too high meeting of density of heat flow rate causes that junction temperature of chip is too high, has a strong impact on the life-span of chip, how to address this problem to have obtained engineer's common concern in the boundary.The heat conductivility of substrate has direct influence to life-span and the performance of LED, very important element when base plate for packaging becomes the high briliancy LED commodity of design.Used glass epoxy resin base plate for packaging such as FR4, its heat radiation limit is only supported the LED below the 0.5W mostly, can't satisfy the radiating requirements of high-capacity LED in the past.Though the high heat-radiating substrate of metallicity that then occurs is given certain metallic character with conventional resins substrate or ceramic substrate, and its conductive coefficient is improved, the highest 8W/m.K that also is merely of its conductive coefficient still can't solve the heat dissipation problem of high-power die; The base plate for packaging that has then occurred ceramic packaging substrate and aluminium, copper in succession, though conductive coefficient improves a lot, but still the heat that can't be fully chip be produced derived rapidly.
Based on " the heat-transfer character experimental study of high heat flux temperature-uniforming plate " (Engineering Thermophysics journal, in February, 2008, the 29th the 2nd phase of volume; The 317-319 page or leaf) and " dull and stereotyped vapor chamber and the box-like heat transfer unit (HTU) of micro heat pipe array group " (the Engineering Thermophysics journal, in April, 2011, the 32nd the volume the 4th phase; The 651-654 page or leaf) document and " temperature-uniforming plate heat abstractor " (application number 200920270272, November 27 2009 date of application), " temperature-uniforming plate " (application number 200810098148, May 19 2008 year date of application such as; Open day on November 25th, 2009) etc. patent can know that temperature-uniforming plate is also claimed flat plate heat tube, is uniquely in the market to deserve to be called short, little, light, thin; And heat transfer rate is fast; The passive heat radiation element that conductive coefficient is maximum is obtaining widespread usage aspect the passive heat radiation, technology is ripe.
Yet, though that flat-plate heat pipe has a heat transfer rate is fast, advantage such as conductive coefficient is big; But the existing flat-plate heat pipe in market generally is applied to notebook computer, and fields such as computer work or network server are used as passive heat radiation, but seldom is applied to the semiconductor packages field; Its reason is following: because the flat-plate heat pipe outer surface is a naked copper, be difficult for welding, and as easy as rolling off a log oxidation; Especially (like when welding) oxidation rate increases severely under hot conditions, when chips welding is to flat-plate heat pipe, can increase one deck thermal resistance between the flat-plate heat pipe of oxidation and the chip; Hinder the heat transfer of chip; Influence the heat-conducting effect of flat-plate heat pipe, oxidized place also can influence the reflectivity of substrate simultaneously, reduces the luminous flux output of chip.
Summary of the invention
In view of this, be necessary to provide a kind of base plate for packaging that is applicable to semicon industry.
The present invention is achieved in that a kind of base plate for packaging, and it comprises naked copper flat-plate heat pipe and the coating that is arranged on this flat-plate heat pipe outer surface, and this coating comprises bright copper layer, nickel coating, silver coating and antioxidation coating from inside to outside successively.
As the further improvement of such scheme, the thickness range of this nickel coating is 0.05 ~ 0.1 μ m.
As the further improvement of such scheme, this silver coating is the fine silver layer, and this antioxidation coating is the alloy layer of silver.
As the further improvement of such scheme, the general thickness scope of this silver coating and this antioxidation coating is 0.6 ~ 3.0 μ m.Preferably, the general thickness scope of this silver coating and this antioxidation coating is 1.0 ~ 1.5 μ m.Again preferably, the general thickness of this silver coating and this antioxidation coating is 1.2 μ m.
As the further improvement of such scheme, the general thickness scope of silver coating and this antioxidation coating is 0.6 ~ 3.0 μ m, and the thickness of this silver coating is not less than 1.0 μ m.Preferably, the general thickness of this silver coating and this antioxidation coating is 1.2 μ m.
Base plate for packaging provided by the invention; Has higher reflectivity; And can directly on this base plate for packaging, weld semiconductor, it is too high fundamentally to solve chip (semiconductor) heat density simultaneously, can't be with the rapid problem that derives of heat; Guarantee the life-span and the performance of chip, thereby overcome the prejudice that flat-plate heat pipe for a long time can't be applied to the semiconductor packages field.
Description of drawings
The cross-sectional schematic of the base plate for packaging that Fig. 1 provides for preferred embodiments of the present invention.
Fig. 2 is the light flux variations tendency chart of base plate for packaging under hot and humid condition among Fig. 1.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
See also Fig. 1, the structural representation of the base plate for packaging that is applicable to semicon industry 100 that it provides for preferred embodiments of the present invention, the coating 20 that base plate for packaging 100 comprises naked copper flat-plate heat pipe 10 and is arranged on flat-plate heat pipe 10 outer surfaces.In coating 20 was wrapped in flat-plate heat pipe 10, coating 20 comprised four-layer structure from inside to outside: ground floor is bright copper layer 21; The second layer is a nickel coating 23; The 3rd layer is silver coating 25; The 4th layer is antioxidation coating 27.
The main purpose of the bright copper layer 21 of plating is in order to make flat-plate heat pipe 10 smooth surfaces on the outer surface of flat-plate heat pipe 10; No wire drawing, husky hole; Thereby make flat-plate heat pipe 10 integrated stress even; And prepare for next coating, the thickness of bright copper layer 21 is general Bao Yuehao more under situation about achieving the above object.
The LED integrated optical source (100W) of using base plate for packaging 100 is in hot and humid condition, and promptly humidity is 70%, temperature is in 45 ℃ the environment, to light continuously 1850 hours, and its light decay is merely 2.2%, respond well (seeing also table 1 and Fig. 2).In the middle of experiment, have whether the influence of ambient temperature, fluorescent material excite fully, a whether influence such as full contact and measure error between heat-conducting cream and substrate, therefore the situation that luminous flux fluctuates up and down can appear, and ± 2% error range is admissible scope.Through common LED integrated optical source is tested under similarity condition, its light decay just was about 14% in 1000 hours, and its light decay had reached 20% in 2000 hours.
Table 1
Hot and humid condition is carried out in hot and humid case; Be to make the environment of chest the inside remain on the temperature and humidity that needs through air current flow; Object that temperature is high if put in; That air-flow will be taken away the heat that this object produces, and the temperature of object is also guaranteed in certain scope.Therefore, in the high temperature and humidity test in this execution mode, base plate for packaging will keep 45 ℃.Hot and humid experiment is confirmed be under mal-condition to the influence of chip, and temperature experiment need carry out under normal temperature (25 ℃ of finger ring border temperature), in this execution mode; Only if specified otherwise is arranged; Otherwise temperature data all is under normal temperature condition, to measure, and the chip influence is under hot and humid condition, to draw, wherein; Normal temperature condition: 25 ℃ of ambient temperatures, organize LED integrated optical source (100W) more and used continuously 1850 hours; Hot and humid condition: humidity is 70%, temperature is 45 ℃ constant environment, organizes LED integrated optical source (100W) more and uses continuously 1850 hours.Use the LED integrated optical source of base plate for packaging 100, it is in 1850 hours whole process of continuous use, and temperature remains on 55 ℃ basically, in the scope that general chip can bear.
When base plate for packaging 100 guaranteed that welding led chip high brightness is above that exported, substrate did not morph in high humidity environment, can not influence the luminous flux of led chip.Yet the said structure that draws base plate for packaging 100 is not accomplished in one move; But on the basis of scientific research and combine a large amount of experiments to draw; Need pay creative work; It overcomes the prejudice that flat-plate heat pipe 10 for a long time can't be applied to the semiconductor packages field, and hereinafter is roughly narrated whole R&D process with associative list 2.
1. the technical staff has done the relatively more conventional processing of dusting on flat-plate heat pipe 10, promptly belongs to the powder bed of material at the outer surface metal spraying of flat-plate heat pipe 10, directly welds led chip again.Be 70% in humidity, temperature is to test in 45 ℃ the hot and humid environment, finds that its light decay is serious; In the normal temperature condition test, this base plate for packaging is in high temperature (85 ℃) always, the surface oxidation blackout.
2. in the outer surface nickel plating of flat-plate heat pipe 10, directly weld led chip again.In the thermometric process, find: though compare with dusting to handle, the temperature of this base plate for packaging drops to 78.3 ℃ from 85 ℃, still is in the condition of high temperature.And in hot and humid condition, find: the led chip light decay is serious.
3. the outer surface at flat-plate heat pipe 10 is provided with silver layer, directly welds led chip again.In hot and humid condition, find: compare with above-mentioned two schemes, the reflectivity of this base plate for packaging is higher, and initial luminous flux obviously improves, but along with the propelling of service time, find that its anti-aging capability a little less than, the surface oxidation blackout, luminous flux sharply descends.In the normal temperature condition test, the temperature that this base plate for packaging records is 65.5 ℃.
4. the outer surface at flat-plate heat pipe 10 sets gradually nickel, copper, silver layer, directly welds led chip again.In hot and humid condition, find: part copper and silver-colored layering, surface oxidation blackout.
5. the outer surface at flat-plate heat pipe 10 sets gradually copper, silver layer, directly welds led chip again.In hot and humid condition, find: part copper and silver-colored layering, coating comes off, the surface oxidation blackout.
6. the outer surface at flat-plate heat pipe 10 sets gradually copper, silver, antioxidation coating, directly welds led chip again.In hot and humid condition, find: part copper and silver-colored layering, silver surface are yellowish-brown.
Table 2
Through above-mentioned research, the outer surface at flat-plate heat pipe 10 sets gradually copper, nickel, silver, antioxidation coating at last, yet finds to adopt the fine silver layer more outstanding with the effect that silver-colored alloy layer combines.Scheme of designing at the beginning; The general thickness scope of this silver coating and this antioxidation coating is 0.6 ~ 3 μ m, though can overcome the defective of above six technical schemes, finds; When the general thickness scope of this silver coating and this antioxidation coating is 1.0 ~ 1.5 μ m, its better effects if.Through test data research constantly, when the general thickness of finding this silver coating and this antioxidation coating was 1.2 μ m, effect also will be got well at last.Find also that in addition the thickness of silver coating 25 is got over Bao Yuehao, but its thickness tries not to be lower than 1.0 μ m; Its effect is better, and like table 1 and shown in Figure 2, not only temperature can reach 55 ℃; It is all much lower to compare above-mentioned any scheme temperature, and its optical efficiency can keep higher level again.
In sum; Base plate for packaging provided by the invention can be as the base plate for packaging of semicon industry; Improve the reflectivity of substrate, can directly on this substrate, weld semiconductor, it is too high fundamentally to solve the chip heat density simultaneously; Can't the rapid problem that derives of heat be guaranteed the life-span and the performance of chip.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a base plate for packaging is characterized in that, it comprises naked copper flat-plate heat pipe and the coating that is arranged on this flat-plate heat pipe outer surface, and this coating comprises bright copper layer, nickel coating, silver coating and antioxidation coating from inside to outside successively.
2. base plate for packaging as claimed in claim 1 is characterized in that, the thickness range of this nickel coating is 0.05 ~ 0.1 μ m.
3. base plate for packaging as claimed in claim 1 is characterized in that, this silver coating is the fine silver layer, and this antioxidation coating is the alloy layer of silver.
4. like claim 1 or 3 described base plate for packaging, it is characterized in that the general thickness scope of this silver coating and this antioxidation coating is 0.6 ~ 3.0 μ m.
5. base plate for packaging as claimed in claim 4 is characterized in that, the general thickness scope of this silver coating and this antioxidation coating is 1.0 ~ 1.5 μ m.
6. base plate for packaging as claimed in claim 5 is characterized in that, the general thickness of this silver coating and this antioxidation coating is 1.2 μ m.
7. base plate for packaging as claimed in claim 4 is characterized in that, the thickness of this silver coating is not less than 1.0 μ m.
8. base plate for packaging as claimed in claim 7 is characterized in that, the general thickness of this silver coating and this antioxidation coating is 1.2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104076294A CN102738349A (en) | 2011-12-09 | 2011-12-09 | Package substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104076294A CN102738349A (en) | 2011-12-09 | 2011-12-09 | Package substrate |
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| CN102738349A true CN102738349A (en) | 2012-10-17 |
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| CN2011104076294A Pending CN102738349A (en) | 2011-12-09 | 2011-12-09 | Package substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110383510A (en) * | 2017-03-08 | 2019-10-25 | 科锐公司 | Substrate and correlation technique for light emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101126863A (en) * | 2006-08-15 | 2008-02-20 | 财团法人工业技术研究院 | Light-emitting diode light source module with heat dissipation structure |
| CN101922635A (en) * | 2010-08-17 | 2010-12-22 | 安徽莱德光电技术有限公司 | High-power LED lamp adopting heat pipe for heat dissipation |
| CN102237350A (en) * | 2010-04-20 | 2011-11-09 | 东芝照明技术株式会社 | Luminaire and light-emitting apparatus with light-emitting devices |
-
2011
- 2011-12-09 CN CN2011104076294A patent/CN102738349A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101126863A (en) * | 2006-08-15 | 2008-02-20 | 财团法人工业技术研究院 | Light-emitting diode light source module with heat dissipation structure |
| CN102237350A (en) * | 2010-04-20 | 2011-11-09 | 东芝照明技术株式会社 | Luminaire and light-emitting apparatus with light-emitting devices |
| CN101922635A (en) * | 2010-08-17 | 2010-12-22 | 安徽莱德光电技术有限公司 | High-power LED lamp adopting heat pipe for heat dissipation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110383510A (en) * | 2017-03-08 | 2019-10-25 | 科锐公司 | Substrate and correlation technique for light emitting diode |
| CN110383510B (en) * | 2017-03-08 | 2024-02-06 | 科锐Led公司 | Substrate for light emitting diode and related method |
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Application publication date: 20121017 |