CN102738294B - Method for manufacturing multi-color drawing type solar cell - Google Patents
Method for manufacturing multi-color drawing type solar cell Download PDFInfo
- Publication number
- CN102738294B CN102738294B CN201110091412.7A CN201110091412A CN102738294B CN 102738294 B CN102738294 B CN 102738294B CN 201110091412 A CN201110091412 A CN 201110091412A CN 102738294 B CN102738294 B CN 102738294B
- Authority
- CN
- China
- Prior art keywords
- color
- pattern
- reflecting layer
- paintings
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 27
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 238000010422 painting Methods 0.000 claims description 30
- 239000003292 glue Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 69
- 239000004065 semiconductor Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/16—Processes, not specifically provided for elsewhere, for producing decorative surface effects for applying transfer pictures or the like
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/157—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides a manufacturing method of a multicolor drawing type solar cell. Comprises the following steps of forming a photoelectric conversion layer on a substrate. And forming an anti-reflection layer above the photoelectric conversion layer according to a background color required by a picture. And etching the area of the first pattern of the anti-reflection layer to the thickness corresponding to the first color according to the first color of the first pattern required by the drawing. And etching the area of the second pattern of the anti-reflection layer to the thickness corresponding to the second color according to the second color of the second pattern required by the drawing.
Description
Technical field
The invention relates to a kind of photo-voltaic cell solar radiation energy being converted to electric energy, relate to the solar cell and manufacture method thereof with color adjusting and changing especially.
Background technology
Solar cell or photo-voltaic cell are electric energy by the luminous energy of sunlight by opto-electronic conversion mechanism transformation.In recent years, under the tide of Globalization protection, solar cell supply electric power is sent to great expectations, and actively carries out research and development, and the phase can obtain commercialization widely.Based on decoration demand or the factor of visual appearance, solar cell may need different appearance colours, such as: when by solar cell application on the roof of building or exterior wall time, if when considering that architectural design is attractive in appearance, even if need to do integral matching with the color of building or context.
And the technology of known manufacture multicolour solar cell mostly gives solar cell different colors by superimposed multi-layer anti-reflection layer, therefore need comparatively somewhat complex design or processing procedure.How to affect under the less prerequisite of solar power conversion efficiency, and multicolour solar cell person can obtained, for this reason needed for people in the industry.
Summary of the invention
Therefore, an object of the present invention is the manufacture method at the multicolour paintings type solar cell providing a kind of innovation (Multi-color crayoned solar cells).
According to above-mentioned object, a kind of manufacture method of multicolour paintings type solar cell, it comprises following steps.Form a photoelectric conversion layer on a base material.According to the background color needed for paintings, form an anti-reflecting layer above above-mentioned photoelectric conversion layer.First color of the first pattern needed for paintings, the thickness that region to the first Color pair etching the first pattern of anti-reflecting layer is answered.Second color of the second pattern needed for paintings, the thickness that region to the second Color pair etching the second pattern of anti-reflecting layer is answered.
According to one embodiment of the invention, anti-reflecting layer comprises silicon nitride or silica.
According to another embodiment of the present invention, the method for etching anti-reflecting layer more comprises formation one and etches glue on anti-reflecting layer, to etch anti-reflecting layer to required thickness.
According to another embodiment of the present invention, etching glue comprises hydrofluoride.
According to another embodiment of the present invention, above-mentioned manufacture method also comprises the 3rd color of the 3rd pattern needed for paintings, the thickness that the region etching the 3rd pattern of anti-reflecting layer is answered to the 3rd Color pair.
From the above, apply the manufacture method of multicolour paintings type solar cell of the present invention, background color first needed for paintings forms an anti-reflecting layer above above-mentioned photoelectric conversion layer, the shades of colour of the various patterns again needed for paintings, is etched to thickness corresponding to various pattern to realize multicoloured solar cell by anti-reflecting layer.This manufacture method is different from the known mode with laminated multi-layer anti-reflecting layer and realizes multicoloured means, and simplifies the complexity of known formation multi-layer anti-reflection layer.
Accompanying drawing explanation
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, appended accompanying drawing is described as follows:
Fig. 1-6 is flow process profiles of the manufacture method of a kind of multicolour paintings type solar cell illustrated according to an embodiment of the present invention.
[primary clustering symbol description]
100: solar cell
110: base material
111: photoelectric conversion layer
112:N type semiconductor layer
114:P-N junction
116: antireflection
120: the first patterns
122: the second patterns
124: the three patterns
126: electrode
128: electrode
D: thickness
D
1: thickness
D
2: thickness
D
3: thickness
Embodiment
Please refer to Fig. 1-6, it illustrates the flow process profile of the manufacture method of a kind of multicolour paintings type solar cell 100 according to an embodiment of the present invention.The n type semiconductor layer 112 that please refer to Fig. 1 is formed and is arranged on P type semiconductor base material 110, and is therebetween formed with P-N junction 114, so be formed with electric field at P-N junction 114 place.Therefore, when light exposes to now, electric field forms part and namely produces positive charge carriers (positive charge carriers) and negative charge carriers (negative charge carriers), thus generation current flows through P-N junction 114, and namely this be called opto-electronic conversion mechanism.In broad terms, the combination of P type semiconductor base material 110 and n type semiconductor layer 112, namely produces electric energy in order to construction photoelectric conversion layer 111 in order to change incident light.P type semiconductor layer 110 can be P-type silicon base material, and n type semiconductor layer 112 is deposited on above P-type silicon base material, is doped into P-type silicon base material and obtains via N-type impurity.In like manner, the combination of N type semiconductor base material and p type semiconductor layer, also can be used for construction photoelectric conversion layer.Broad sense and discussing, photoelectric conversion layer 111 can be made up of one or more semiconductor substances, and this semiconductor substance can be monocrystalline (single crystalline), polycrystalline (polycrystalline), the silicon of amorphous (amorphous) state, germanium or similar semi-conducting material.
As shown in Figure 2, transparent anti-reflecting layer 116 be formed be arranged at above photoelectric conversion layer 111, can be made up of silicon nitride (silicon nitride) or silica (silicon oxide) material, its formation method can be vapour deposition method (evaporation), mode that sputtering method (sputtering), print process (print screen), chemical vapour deposition technique (CVD) or other personage being familiar with this skill know.Anti-reflecting layer 116 is in order to reduce the light reflection loss (reflective loss) on battery unit surface.The thickness of anti-reflecting layer 116 also determines the color of solar cell 100 simultaneously.In the present embodiment, the background color first needed for multicolour paintings, forms an anti-reflecting layer 116 above above-mentioned photoelectric conversion layer 111.The thickness D of anti-reflecting layer 116 is background colors and determining needed for paintings.
As shown in Figure 3, the first pattern 120 of the first color is formed on anti-reflecting layer 116.The mode performed is the first color of the first pattern 120 needed for paintings, the thickness D that region to the first Color pair etching the first pattern 120 of anti-reflecting layer 116 is answered
1.In the present embodiment, the mode of etching anti-reflecting layer 116 is that wire mark one etches glue in the region of the first pattern 120, so as to etching anti-reflecting layer 116 to required thickness.Etching glue can be the etching glue of hydrofluoric acid containing salt etc., but is not limited to this.
As shown in Figure 4, the second pattern 122 of the second color is formed on anti-reflecting layer 116.The mode performed is the second color of the second pattern 122 needed for paintings, the thickness D that region to the second Color pair etching the second pattern 122 of anti-reflecting layer 116 is answered
2.In the present embodiment, the mode of etching anti-reflecting layer 116 is that wire mark one etches glue in the region of the first pattern 122, so as to etching anti-reflecting layer 116 to required thickness.Etching glue can be the etching glue of hydrofluoric acid containing salt etc., but is not limited to this.
As shown in Figure 5, the 3rd pattern 124 of the 3rd color is formed on anti-reflecting layer 116.The mode performed is the 3rd color of the 3rd pattern 124 needed for paintings, the thickness D that the region etching the 3rd pattern 124 of anti-reflecting layer 116 is answered to the 3rd Color pair
3.In the present embodiment, the mode of etching anti-reflecting layer 116 is that wire mark one etches glue in the region of the first pattern 124, so as to etching anti-reflecting layer 116 to required thickness.Etching glue can be the etching glue of hydrofluoric acid containing salt etc., but is not limited to this.
Above-mentioned paintings can according to the demand of designer, and the pattern of etching anti-reflecting layer to two kind, three kinds or more kind thickness, to realize the multicoloured possibility of paintings.Above-mentioned anti-reflecting layer thickness can because the material, process parameter etc. of anti-reflecting layer be different from the relation of pattern color, and have do not expect with anti-reflecting layer thickness and the corresponding relation of pattern color, therefore this case the relation of unlisted " thickness data " correspondence " pattern color ".
As shown in Figure 6, electrode (126,128) is formed respectively and is arranged at the corresponding surface of photoelectric conversion layer 111, the mode that its formation method can be vapour deposition method (evaporation), sputtering method (sputtering), print process (print screen), chemical vapour deposition technique (CVD) or other personage being familiar with this skill know.Fig. 6 is only the position of signal electrode (126,128) relative to photoelectric conversion layer 111, therefore omits the pattern illustrated in above-mentioned Fig. 2-5.Electrode 126 forms the front being arranged at photoelectric conversion layer 111, and run through anti-reflecting layer 116 and be electrically connected to photoelectric conversion layer 111; Electrode 128 formation arrange the back side of photoelectric conversion layer 111, and contact with P type semiconductor base material 110.Electrode (126,128) can be made up of layer gold or alloy, its material can be the similar substances such as gold, silver, aluminium, copper, platinum, can also be the such as transparent conductive oxide (transparent conductiveoxide) such as tin indium oxide (ITO) or zinc oxide (ZnO).
Electrode (126,128) namely becomes two electric terminals of photoelectric conversion layer 111.When solar cell 100 accepts solar light irradiation, electrode (126,128) is that the electric energy in order to produce photoelectric conversion layer 111 carries out charge and discharge operation.Preferably, electrode 128 can be arranged to various shape, such as concavo-convex fluctuating (concavo-convex) structure, assembles (light collection) in order to luminous energy.Moreover electrode 126 can form specific surface structure (surface-textured structure) and have rough surface, then for light energy and in the incident efficiency of photoelectric conversion layer 111, can promote to some extent.
On electrode (126,128), different protective layers (not being illustrated in drawing) can be covered on demand to increase the weatherability of solar cell 100.
From the invention described above execution mode, apply the manufacture method of multicolour paintings type solar cell of the present invention, background color first needed for paintings forms an anti-reflecting layer above above-mentioned photoelectric conversion layer, the shades of colour of the various patterns again needed for paintings, is etched to thickness corresponding to various pattern to realize multicoloured solar cell by anti-reflecting layer.This manufacture method is different from the known mode with laminated multi-layer anti-reflecting layer and realizes multicoloured means, and simplifies the complexity of known superimposed multi-layer anti-reflection layer.
Although the present invention discloses as above with execution mode; so itself and be not used to limit the present invention; anyly be familiar with this those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore scope of patent protection of the present invention must define depending on appending claims is as the criterion.
Claims (4)
1. a manufacture method for multicolour paintings type solar cell, is characterized in that, at least comprise:
Form a photoelectric conversion layer on a base material;
According to the background color needed for paintings, form an anti-reflecting layer above above-mentioned photoelectric conversion layer;
First color of the first pattern needed for these paintings, forms etching glue on this anti-reflecting layer, the thickness of answering to this first Color pair with the region etching this first pattern of this anti-reflecting layer; And
Second color of the second pattern needed for these paintings, forms etching glue on this anti-reflecting layer, the thickness of answering to this second Color pair with the region etching this second pattern of this anti-reflecting layer.
2. the manufacture method of multicolour paintings type solar cell according to claim 1, it is characterized in that, this anti-reflecting layer comprises silicon nitride or silica.
3. the manufacture method of multicolour paintings type solar cell according to claim 1, it is characterized in that, this etching glue comprises hydrofluoride.
4. the manufacture method of multicolour paintings type solar cell according to claim 1, is characterized in that, also comprise:
3rd color of the 3rd pattern needed for these paintings, the thickness that the region etching the 3rd pattern of this anti-reflecting layer is answered to the 3rd Color pair.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100110802 | 2011-03-29 | ||
| TW100110802A TWI435462B (en) | 2011-03-29 | 2011-03-29 | Manufacturing method for multi-color crayoned solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102738294A CN102738294A (en) | 2012-10-17 |
| CN102738294B true CN102738294B (en) | 2015-06-17 |
Family
ID=46993441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110091412.7A Expired - Fee Related CN102738294B (en) | 2011-03-29 | 2011-04-07 | Method for manufacturing multi-color drawing type solar cell |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101250207B1 (en) |
| CN (1) | CN102738294B (en) |
| TW (1) | TWI435462B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023956A (en) * | 2014-04-28 | 2015-11-04 | 陈彩惠 | Solar panel structure with pattern |
| TWI611593B (en) | 2014-08-07 | 2018-01-11 | Chen Cai Hui | Solar panel structure with illuminating pattern |
| EP3648174A1 (en) * | 2018-10-31 | 2020-05-06 | Total SA | Photovoltaic assembly |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5725006A (en) * | 1995-01-31 | 1998-03-10 | Mitsubishi Denki Kabushiki Kaisha | Solar battery cell, a solar battery module, and a solar battery module group |
| CN2733597Y (en) * | 2004-09-27 | 2005-10-12 | 西安佳阳新能源有限公司 | Color photovoltaic assembly |
| KR100952428B1 (en) * | 2009-07-10 | 2010-04-14 | 주식회사 순에너지 | Manufacturing method of color design solar cell |
| TW201037843A (en) * | 2009-04-01 | 2010-10-16 | Gintech Energy Corp | High efficeency colored solar cell and manufacturing method thereof |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101728453B (en) * | 2008-10-28 | 2011-10-05 | 昱晶能源科技股份有限公司 | Method for manufacturing solar battery with differential doping |
-
2011
- 2011-03-29 TW TW100110802A patent/TWI435462B/en not_active IP Right Cessation
- 2011-04-07 CN CN201110091412.7A patent/CN102738294B/en not_active Expired - Fee Related
- 2011-07-13 KR KR1020110069619A patent/KR101250207B1/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5725006A (en) * | 1995-01-31 | 1998-03-10 | Mitsubishi Denki Kabushiki Kaisha | Solar battery cell, a solar battery module, and a solar battery module group |
| CN2733597Y (en) * | 2004-09-27 | 2005-10-12 | 西安佳阳新能源有限公司 | Color photovoltaic assembly |
| TW201037843A (en) * | 2009-04-01 | 2010-10-16 | Gintech Energy Corp | High efficeency colored solar cell and manufacturing method thereof |
| KR100952428B1 (en) * | 2009-07-10 | 2010-04-14 | 주식회사 순에너지 | Manufacturing method of color design solar cell |
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI435462B (en) | 2014-04-21 |
| CN102738294A (en) | 2012-10-17 |
| KR101250207B1 (en) | 2013-04-08 |
| TW201240130A (en) | 2012-10-01 |
| KR20120111864A (en) | 2012-10-11 |
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