CN102732950A - Apparatus for continuously growing quasi-monocrystalline crystals - Google Patents
Apparatus for continuously growing quasi-monocrystalline crystals Download PDFInfo
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- CN102732950A CN102732950A CN2012102052270A CN201210205227A CN102732950A CN 102732950 A CN102732950 A CN 102732950A CN 2012102052270 A CN2012102052270 A CN 2012102052270A CN 201210205227 A CN201210205227 A CN 201210205227A CN 102732950 A CN102732950 A CN 102732950A
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Abstract
The invention relates to an apparatus used for continuously growing quasi-monocrystalline crystals. The apparatus comprises a crucible used for placing a silicon solution. A chain-type crystal growing circulation apparatus is arranged above the crucible. The chain-type crystal growing circulation apparatus comprises a powder support plate and a circulation chain. The circulation chain comprises a seed crystal mounting area and a growing area. The chain in the seed crystal mounting area and the chain in the growing area are both separated from the level of the silicon solution in the crucible. The chain in the seed crystal mounting area and the chain in the growing area both form a certain angle with the level of the silicon solution in the crucible. The angle formed by the chain in the seed crystal mounting area and the level of the silicon solution in the crucible is larger than the angle formed by the chain in the growing area and the level of the silicon solution in the crucible. A cooling apparatus is arranged above the chain in the growing area. According to the invention, the crystals do not contact the crucible, such that metal impurities in traditional quartz ceramic crucibles are prevented from diffusing into the crystals, a problem of minority carrier lifetime reduction is avoided, and crystal quality is improved.
Description
Technical field
The present invention relates to the accurate monocrystalline crystalline of a kind of continuous growth device.
Background technology
Sun power is human inexhaustible renewable energy source.Solar energy photoelectric conversion be nearly this year various countries with fastest developing speed, one of project that attracts most attention also is the current increasingly extensive research field of using.Wherein remain main photovoltaic cell base material with polysilicon.In recent years; Adopt in addition seed crystal inductive technology of directional solidification method,, grow the base material of a kind of accurate monocrystalline crystal of fabricating low-defect-density as photovoltaic cell significantly to be lower than the production cost of Cz method growing single-crystal; Can obtain higher battery conversion efficiency, receive people's fervent concern.Adopt the grow main difference of production process of accurate monocrystalline crystal ingot and traditional ingot casting polycrystalline silicon ingot of directional solidification method to be, lay the monocrystalline silico briquette as seed crystal in the bottom of common polycrystalline crucible before the charging, place the ordinary silicon material then above that.In thaw process, through the heat radiation of crucible bottom, the cooling seed crystal melts seed crystal top part, and processes such as long then crystalline substance, annealing, cooling grow accurate monocrystalline crystal.
The ingot casting process of comparing traditional; Because seed crystal is being changed just Long contact time crucible of material process; Caused the diffusion of impurity in seed crystal and crystal in the crucible, made the crystal ingot bottom cause the more common polysilicon in low minority carrier life time district darker, thereby influence the product income of crystal ingot because of metal diffusing.On the other hand, type single crystal growing use is as the monocrystalline silico briquette of seed crystal, after the experience thermal shocking; The defectives such as dislocation that self produces, along with crystalline growth fast breeding, the increase of defective reduces the quality of crystal and silicon chip fast; After reaching a certain height; To the eye as the class monocrystalline silicon piece of monocrystalline, because of intravital defect concentration higher, silicon chip quality even be lower than common polysilicon; Thereby limited the growing height of type monocrystalline crystal ingot, also limited the reduction of type monocrystalline crystal production cost simultaneously.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency of prior art, the accurate monocrystalline crystalline of a kind of continuous growth device is provided, avoid the metallic impurity minority carrier life time that diffusion of contaminants causes in crystal reduction in the conventional quartz ceramic crucible, improve crystal mass.
The technical solution adopted for the present invention to solve the technical problems is: the accurate monocrystalline crystalline of a kind of continuous growth device; Has the crucible that is used to place silicon solution; The crucible outer wall is provided with well heater; Described crucible top is provided with the long brilliant circulation device of chain type; The long brilliant circulation device of described chain type comprises power supporting disk and the circulation link chain that is connected to form through the power supporting disk; But described circulation link chain has seed crystal carry district, the vitellarium of carry seed crystal, the chain in the chain in the described seed crystal carry district and the vitellarium all with crucible in the silicon liquid level of solution separate, chain in the described seed crystal carry district and the chain in the vitellarium all with crucible in the silicon liquid level of solution form certain angle; The angle that silicon liquid level of solution in chain in the described seed crystal carry district and the crucible forms is greater than the angle of chain in the vitellarium and the formation of the silicon liquid level of solution in the crucible, and the chain top in the described vitellarium is provided with water cooler.
Further, the angle of the formation of the silicon liquid level of solution in chain in the described vitellarium and the crucible is 15～45 °.
Further, the angle of the formation of the silicon liquid level of solution in chain in the described vitellarium and the crucible is 30 °.
Further, the angle of the formation of the silicon liquid level of solution in chain in the described vitellarium and the crucible is 25 °
Further, the below of the chain tail end in the described vitellarium is provided with the crystal ingot unloading machine that is used to transport crystal ingot.
Further, be provided with the former feed bin that is used for adding the silicon raw material above the described crucible to crucible.
The invention has the beneficial effects as follows: the present invention has avoided the metallic impurity minority carrier life time that diffusion of contaminants causes in crystal reduction in the conventional quartz ceramic crucible, has improved crystal mass.The conventional quartz ceramic crucible is taken into account support, change material, long crystalline substance, annealing, the multiple function of refrigerative, and crystal and crucible disengage among the present invention, and crucible is the function of responsibleization material only, thereby realizes the long-time and recycling of crucible.
In the conventional quartz ceramic crucible; The crystal ingot bottom contacts with sidewall of crucible; Diffusion of contaminants causes that hanging down the minority carrier life time district blocks; And the high metals content impurity that causes because of impurity segregation of crystal ingot head is so that low minority carrier life time blocks, and the flaw-piece part of common crystal ingot loss all influences the finished product earning rate of output crystal ingot.And adopt after the long brilliant circulation device of chain type, the problem that crystal head, afterbody and flaw-piece do not exist low minority carrier life time to block, so crystalline finished product earning rate is greatly improved.
Since crystal with do not contact all around, the thermal stresses of crystals can be released, and can further reduce the defective of dislocation that crystals causes by stress etc., the raising crystal mass.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further specified.
Fig. 1 is a structural representation of the present invention;
Wherein: 1. former feed bin, 2. well heater, 3. silicon solution, 4. vitellarium, 5. crucible, 8. crystal ingot unloading machine, 9. power supporting disk, 11. water coolers, 12. seed crystal carry districts.
Embodiment
Combine accompanying drawing that the present invention is further described now.These accompanying drawings are the synoptic diagram of simplification substruction of the present invention only are described in a schematic way, so it only shows the formation relevant with the present invention.
As shown in Figure 1; The accurate monocrystalline crystalline of a kind of continuous growth device; Has the crucible 5 that is used to place silicon solution 3; Crucible 5 outer walls are provided with well heater 2, and crucible 5 tops are provided with the long brilliant circulation device of chain type, and the long brilliant circulation device of chain type comprises power supporting disk 9 and the circulation link chain that is connected to form through power supporting disk 9; But circulation link chain has the seed crystal carry district 12 and vitellarium 4 of carry seed crystal, and the chain in the seed crystal carry district 12 all separates with crucible 5 interior silicon solution 3 liquid levels with vitellarium 4 interior chains.
Crucible 5 tops are provided with the former feed bin 1 that is used for adding to crucible 5 the silicon raw material, and the chain tail end below in the vitellarium 4 is provided with the crystal ingot unloading machine 8 that is used to transport crystal ingot.
The seed crystal that at first will meet the profile specification in seed crystal carry district 12 is hung on the chain in the seed crystal carry district 12, along with the rotation of circulation link chain, turn over be positioned at silicon solution 3 lip-deep power supporting disks 9 after; The part seed crystal is immersed under silicon solution 3 liquid levels, and fusing under the effect of high temperature silicon solution is along with the operation of circulation link chain; Under the effect of water cooler 11, temperature reduces in the seed body, and silicon solution 3 begins crystalline growth under the inducing of seed crystal; Solid-liquid interface is pushed ahead; Begin long crystalline substance, the circulation link chain operation is constantly pulled out silicon solution 3 liquid levels with crystal, realizes the crystalline growth.In long brilliant ending phase, controlled chilling device 11 temperature are the crystal temperature at two ends end to end, reduce intracrystalline thermograde, lose long brilliant power, long brilliant process natural termination, and crystal separates with liquid level.Because of circulation link chain and silicon solution 3 liquid levels are isolating, when no seed crystal, circulation link chain does not contact with silicon solution 3 liquid levels, and process of setting can not take place, and does not have long trichite yet and gives birth to.Therefore, after seed crystal broke away from silicon solution fully, long brilliant process finished naturally, and crystal ingot no longer enlarges.Behind all crystals disengaging liquid level, crystal growth is accomplished, and temperature descends under the effect of water cooler 11.After temperature was reduced to suitable temperature, the crystal ingot that growth is successful unloaded from circulation link chain, shifted out long brilliant circulation device to the crystal ingot unloading machine 8 of chain type.
The long brilliant circulation device of chain type realizes that carry seed crystal, seeding are seed crystal partial melting, long crystalline substance, cooling and discharging function one.Long crystalline substance, cooling, discharging are arranged on the chain of the same vitellarium 4 of circulation link chain, and keep certain angle with silicon solution 3 liquid levels.
Can control the size of crystal ingot in the long brilliant process through the area of control carry seed crystal, the slit is set after reaching the seed crystal area, separate different crystal ingots.The big area crucible heater can be mated different power according to changing different between material and long crystalline region.Former feed bin 1 adds solid-state or liquid-state silicon continuously according to the needs of long brilliant speed, realizes the continuous growth of crystal ingot.
Practical implementation parameter one:
Practical implementation parameter two:
The present invention has avoided metallic impurity diffusion of contaminants in crystal in the conventional quartz ceramic crucible to cause the decline of crystal mass.The conventional quartz ceramic crucible is taken into account support, change material, long crystalline substance, annealing, the multiple function of refrigerative, and crystal and crucible disengage among the present invention, and crucible is the function of responsibleization material only, thereby realizes the long-time and recycling of crucible.Since crystal with do not contact all around, the thermal stresses of crystals can be released, and can further reduce the defective of dislocation that crystals causes by stress etc., the raising crystal mass.
The present invention adopts circulation link chain circular flow structure, has realized the unitary device continuous growth, has improved equipment capacity greatly.Crystal ingot growth different heights is grown simultaneously, and the resistivity of control silicon solution just can realize the crystal ingot height homogeneous of resistivity end to end in the continuous charging process, and traditional polysilicon directional freezing device can't be accomplished.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification sheets, must confirm its technical scope according to the claim scope.
Claims (6)
1. the accurate monocrystalline crystalline of continuous growth device; Has the crucible that is used to place silicon solution; The crucible outer wall is provided with well heater; It is characterized in that: described crucible top is provided with the long brilliant circulation device of chain type; The long brilliant circulation device of described chain type comprises power supporting disk and the circulation link chain that is connected to form through the power supporting disk; But described circulation link chain has seed crystal carry district, the vitellarium of carry seed crystal, the chain in the chain in the described seed crystal carry district and the vitellarium all with crucible in the silicon liquid level of solution separate, chain in the described seed crystal carry district and the chain in the vitellarium all with crucible in the silicon liquid level of solution form certain angle; The angle that silicon liquid level of solution in chain in the described seed crystal carry district and the crucible forms is greater than the angle of chain in the vitellarium and the formation of the silicon liquid level of solution in the crucible, and the chain top in the described vitellarium is provided with water cooler.
2. the accurate monocrystalline crystalline of a kind of continuous growth according to claim 1 device is characterized in that: the angle that the silicon liquid level of solution in chain in the described vitellarium and the crucible forms is 15～45 °.
3. the accurate monocrystalline crystalline of a kind of continuous growth according to claim 2 device is characterized in that: the angle that the silicon liquid level of solution in chain in the described vitellarium and the crucible forms is 30 °.
4. the accurate monocrystalline crystalline of a kind of continuous growth according to claim 2 device is characterized in that: the angle that the silicon liquid level of solution in chain in the described vitellarium and the crucible forms is 25 °.
5. the accurate monocrystalline crystalline of a kind of continuous growth according to claim 1 device is characterized in that: the chain tail end below in the described vitellarium is provided with the crystal ingot unloading machine that is used to transport crystal ingot.
6. the accurate monocrystalline crystalline of a kind of continuous growth according to claim 1 device is characterized in that: described crucible top is provided with the former feed bin that is used for adding to crucible the silicon raw material.
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| CN102732950B CN102732950B (en) | 2015-04-15 |
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Citations (9)
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| JPS5840045A (en) * | 1981-09-02 | 1983-03-08 | Meiji Milk Prod Co Ltd | Method and apparatus for continuous preparation of agglomerated ice |
| JPS5914437B2 (en) * | 1981-09-16 | 1984-04-04 | 株式会社東芝 | Crystal pulling device |
| JPS6051695A (en) * | 1983-08-29 | 1985-03-23 | Hitachi Cable Ltd | Liquid-phase epitaxial crystal growing method and its apparatus |
| WO1990008732A1 (en) * | 1989-02-03 | 1990-08-09 | Milewski John V | Method and apparatus for continuous controlled production of single crystal whiskers |
| JPH10114554A (en) * | 1996-10-04 | 1998-05-06 | Nkk Corp | Equipment for producing slag aggregate |
| JP2000077340A (en) * | 1998-09-02 | 2000-03-14 | Nec Kyushu Ltd | Normal pressure vapor growth device |
| CN1349569A (en) * | 1999-04-30 | 2002-05-15 | 株式会社荏原制作所 | Method and device for continuously pulling up crystal |
| CN1406864A (en) * | 2001-08-22 | 2003-04-02 | 中国科学院成都有机化学研究所 | Continuous carbon nano-tube preparation by rotary moving-bed reactor |
| CN101616868A (en) * | 2007-01-25 | 2009-12-30 | 独立行政法人产业技术综合研究所 | The manufacturing installation of silicon substrate, manufacture method and silicon substrate |
-
2012
- 2012-06-20 CN CN201210205227.0A patent/CN102732950B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5840045A (en) * | 1981-09-02 | 1983-03-08 | Meiji Milk Prod Co Ltd | Method and apparatus for continuous preparation of agglomerated ice |
| JPS5914437B2 (en) * | 1981-09-16 | 1984-04-04 | 株式会社東芝 | Crystal pulling device |
| JPS6051695A (en) * | 1983-08-29 | 1985-03-23 | Hitachi Cable Ltd | Liquid-phase epitaxial crystal growing method and its apparatus |
| WO1990008732A1 (en) * | 1989-02-03 | 1990-08-09 | Milewski John V | Method and apparatus for continuous controlled production of single crystal whiskers |
| JPH10114554A (en) * | 1996-10-04 | 1998-05-06 | Nkk Corp | Equipment for producing slag aggregate |
| JP2000077340A (en) * | 1998-09-02 | 2000-03-14 | Nec Kyushu Ltd | Normal pressure vapor growth device |
| CN1349569A (en) * | 1999-04-30 | 2002-05-15 | 株式会社荏原制作所 | Method and device for continuously pulling up crystal |
| CN1406864A (en) * | 2001-08-22 | 2003-04-02 | 中国科学院成都有机化学研究所 | Continuous carbon nano-tube preparation by rotary moving-bed reactor |
| CN101616868A (en) * | 2007-01-25 | 2009-12-30 | 独立行政法人产业技术综合研究所 | The manufacturing installation of silicon substrate, manufacture method and silicon substrate |
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| CN102732950B (en) | 2015-04-15 |
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Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |