CN102723431A - Single heat source thermal battery - Google Patents

Abstract

Disclosed in the invention is a thermoelectric conversion apparatus, that is, a single heat source thermal battery. With utilization of the single heat source thermal battery, a problem that internal energy of a single heat source can not be utilized can be solved; besides, heat can be absorbed from the ambient environment to generate currents without any influence on the environment. The battery is formed by a P type semiconductor, a metal layer and an insulation layer that is clamped between the P type semiconductor and the metal layer. Emitted electrons of the metal layer can pass through the insulation layer easily and are constrained by a cavity of the P type semiconductor, thereby realizing oriented immigration of charges. According to the invention, the provided battery is a permanent one that can absorb heat from the ambient environment to generate electric energy without a temperature difference; and no pollution to the environment will happen. Moreover, the wide application of the battery enables an energy problem and an environment problem to be completely solved.

Description

Thermal battery with single source

Technical field the present invention is a kind of thermoelectric conversion device, does not need the temperature difference just can realize by the conversion of heat energy to electric energy.

Though the existing temperature difference heat battery of background technology can be thermal power transfer an electric energy, switch condition is to have the temperature difference to exist; There is not the temperature difference then can't utilize heat energy.

Summary of the invention the present invention is a kind of use device of interior ability.Press from both sides an insulating barrier by p type semiconductor layer and metal level and constitute, this device can absorb heat from surrounding environment and convert electric energy into and do not need the temperature difference to exist.Thereby a kind of new free of contamination energy utilization patterns are provided.

Appended drawings 1 is the cutaway view of thermal battery with single source.Structure is divided into three layers: p type semiconductor layer (4), insulating barrier (3) and metal level (2).P type semiconductor (4) links to each other with lead (5), and metal level (2) links to each other with lead (1).Accompanying drawing 2 is the principle schematic of thermal battery with single source.Folder one insulating barrier (3) forms quantum tunneling effect knot (6) between metal level (2) and the P type semiconductor (4).Then form diffused junction (7) between metal level (5) and the P type semiconductor (4).Fig. 2 middle part solid line (8) is the metal electron air tightness, and dotted line (9) is the electron density with hole-recombination.The interior motional electromotive force of solid line (10) expression thermal battery with single source.

P type semiconductor (4) and metal level (2) folder one insulating barrier (3) among the embodiment figure (1).Insulating barrier (3) is very thin to be 10 ^-9～10 ^-4About rice, be enough to make electronics generation quantum tunneling effect and form quantum tunneling effect knot (6), the electronics of plain conductor (5) also can form diffused junction (7) to P type semiconductor (4) diffusion.The voltage of quantum tunneling effect knot when external circuit breaks off, just forms certain interior motional electromotive force like this greater than the voltage of diffused junction.

Below in conjunction with Fig. 2 motional electromotive force in of the present invention is carried out mathematical derivation, the interior motional electromotive force of quantum tunneling effect knot is divided into two parts, accumulation electromotive force U ₀With diffusion potential U _A0And the interior motional electromotive force of diffused junction is U _B0Thereby the total electromotive force of thermal battery with single source is ξ=U ₀+ U _A0-U _B0Metal level electrons emitted air tightness is n _A0The electron gas density of then passing insulating barrier arrival P type semiconductor then does

(q is an electron charge, and k is a Boltzmann constant, and T is a thermodynamic temperature), the P type semiconductor minority carrier density is n _P0Diffusion potential U then _A0And U _B0Available PN junction voltage equation

(U _H0Expression PN junction voltage, n _N0The majority carrier density of expression N type semiconductor) finds the solution.

Get the equation distortion and the known quantity substitution:

$U_{A0}=-\frac{\mathrm{kT}}{q}\ln \frac{n_{p0}}{n_{A0}{e}^{-U_{0}q/2\mathrm{kT}}}$

$=-\frac{\mathrm{kT}}{q}\ln \frac{n_{P0}}{n_{A0}}-\frac{U_0}{2}$

$U_{B0}=-\frac{\mathrm{kT}}{q}\ln \frac{n_{P0}}{n_{A0}}$

Therefore the total electromotive force of thermal battery with single source is:

$\mathrm{\ξ}=U_0+U_{A0}-U_{B0}$

$=U_0+(-\frac{\mathrm{kT}}{q}\ln \frac{n_{P0}}{n_{A0}}-\frac{U_0}{2})-(-\frac{\mathrm{kT}}{q}\ln \frac{n_{P0}}{n_{A0}})$

$=\frac{U_0}{2}$

Can find out that from top result of calculation interior motional electromotive force is non-vanishing.Size is half the for quantum tunneling effect knot accumulation electromotive force.The electromotive force of external the end of a thread (1) is higher than the electromotive force of external the end of a thread (5).Then electronics flows to external the end of a thread (1) from external the end of a thread (5) through external circuits when external the end of a thread short circuit.External circuit movement of electrons clearly, the circuit electronics continued to move along metal level (2) → insulating barrier (3) → P type semiconductor (4) → metal level (5) in the migration balance that has changed interior circuit electronics made, thereby formed continuous current.

Quantum tunneling effect knot is actually to be selected electronics, and metal level (2) has only the high electronics of those energy can overcome just that junction voltage passes insulating barrier (3) and arrives P type semiconductor (4); And metal level (5) is just different with the diffused junction between the P type semiconductor (4).Those high-octane electronics combine with the hole in closer, and discharge unnecessary energy.Two knots are compared, and the quantum tunneling effect knot can be selected high energy electron and realize thermoelectric conversion.After the high energy electron of metal level (2) lost, the electronic integral energy in the metal level (2) reduced, and macro manifestations reduces for the metal level temperature.So just can absorb heat, thereby carry out the thermoelectricity conversion under the room temperature condition from the outside.

Choosing insulating gate type field effect tube, is two end points with P type semiconductor substrate line and gate trace, and then this structure is identical with the thermal battery with single source structure.Experiment showed, that the two-end-point electromotive force is different.

If P type semiconductor is used silicon materials, then this device is identical with transistor technology.Is P type silicon surface oxidation silicon dioxide insulating layer earlier, vapor deposition layer of metal on insulating barrier then, but be that thermal cell is piled for raising the efficiency that multilayer stacks together.The present invention uses and not to receive site limitation, and from surrounding environment (air, water), absorbing heat converts electric energy into, thereby wide space is provided for human use's energy.

Claims (1)

1. single source battery---by P type semiconductor (4), the thermoelectric conversion device that metal level (2) and insulating barrier (3) constitute.It is characterized in that insulating barrier (3) is in the centre of P type semiconductor (4) with metal level (2); The hot electron of metal level (2) can pass insulating barrier (3) and with the hole-recombination of P type semiconductor (4), thereby realize the directional migration of electric charge, must the temperature difference can not realize from surrounding environment heat absorption and convert electric energy into.

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