CN102723323B - Structure for assaying plane growth rate of metal nickel silicon compound on hydrazinium and method thereof - Google Patents
Structure for assaying plane growth rate of metal nickel silicon compound on hydrazinium and method thereof Download PDFInfo
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- CN102723323B CN102723323B CN201210204477.2A CN201210204477A CN102723323B CN 102723323 B CN102723323 B CN 102723323B CN 201210204477 A CN201210204477 A CN 201210204477A CN 102723323 B CN102723323 B CN 102723323B
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Abstract
The invention provides a structure for assaying a plane growth rate of metal nickel silicon compound on hydrazinium and a method for assaying the plane growth rate of the metal nickel silicon compound on hydrazinium by using the structure. The method comprises the following steps: observing the brightness of contact holes by an electronic microscope, directly reading the growth length of the metal nickel silicon compound on hydrazinium of different ion concentrations in the plane, calculating the reaction rate according to the process time, and obtaining a distribution diagram of the growth rate of the metal nickel silicon compound having quantized values by observing different positions of the whole wafer to better control the process quality.
Description
Technical field
The present invention relates to field of semiconductor fabrication, particularly relate to a kind of for measuring the structure of the speed of growth in metallic nickel silicon compound plane on trap and utilizing the method for metallic nickel silicon compound on this structure determination trap.
Background technology
Along with the development of integrated circuit technology and critical size scaled, some new materials and new technology all can be introduced in the technique of integrated circuit to meet the requirement of allomeric function.The metal suicide growth process aspect of such as leading portion, in order to meet the requirement of device for more small resistor, metallic nickel is just introduced into the material as being connected with contact hole.
The technological process of metallic nickel Formation of silicide comprises: on device grids, form rear surface growing nitride film, to the place of growing metal silicide be needed to open by photoetching and etching afterwards, and then form thin nickel metal film by the method for physical vapour deposition (PVD), make nickel metal form metal silicide with vertical both direction diffusion reaction in the plane of monocrystalline silicon by annealing, finally form required structure by wet etching.
But because the reactivity of nickel is higher, if the growth rate in the process of reaction controls the bad inefficacy that will cause device performance.Metal extremely can generate and cause the grid of device to be communicated with source electrode, thus causes the inefficacy of whole device.So, study the growth rate of metallic nickel silicide in variable concentrations ion trap by a kind of method, it is important that nickel metal silicide growth planar of controlling well just seems very.
Summary of the invention
The present invention is according to the deficiencies in the prior art part, there is provided a kind of structure for measuring metallic nickel silicon compound lateral growth rate on trap, by this structure directly being observed the extent of growth on metallic nickel silicide different ions trap in plane by electron microscope.
The invention provides a kind of structure for measuring metallic nickel silicon compound lateral growth rate on trap to achieve these goals, comprise an active area, described active area is provided with ion trap, described ion trap is provided with metallic nickel silicon compound, the first contact hole is provided with above described metallic nickel silicon compound, described active area is provided with the second contact hole, there is not metallic nickel silicon compound in described second contact hole.
The invention provides in a preferred embodiment, described ion trap is N-type or P type.
The invention provides in a preferred embodiment, described active area is N-type or P type.
Another one object of the present invention is providing a kind of method utilizing metallic nickel silicon compound lateral growth rate on the above-mentioned structure determination trap provided, comprise the following steps: first, with brightness in sem observation first contact hole and the second contact hole, described first contact hole bottom-exposed goes out active area, and described second contact hole arranges bottom-exposed and goes out metallic nickel silicon compound above ion trap.Secondly, metallic nickel silicon compound is allowed to grow along level orientation, and the brightness change of monitoring in the first contact hole and the second contact hole, stop the growth of metallic nickel silicon compound when brightness changes, record growth time and the distance between the first contact hole and the second contact hole.Finally, the growth rate of metallic nickel silicon compound is calculated according to the data recorded.
The invention provides in a preferred embodiment, ion trap is N-type or P type.
The invention provides in a preferred embodiment, active area is N-type or P type.
The present invention is by the bright dark intensity of electron microscope observation contact hole, metallic nickel silicide growth length planar on the trap of direct reading different ions concentration, the speed of reaction is calculated again by the process time, and obtained the nickel metal suicide growth rate distribution figure of quantized values by the observation of diverse location on whole wafer, thus better control the quality of this technique.
Accompanying drawing explanation
Fig. 1 is for measuring the profile on trap before the structured testing of metallic nickel silicon compound lateral growth rate in the embodiment of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is for measuring the profile on trap after the structured testing of metallic nickel silicon compound lateral growth rate in the embodiment of the present invention.
Fig. 4 is the vertical view of Fig. 3.
Embodiment
The invention provides a kind of structure for measuring metallic nickel silicon compound lateral growth rate on trap, and utilize such structure to carry out surveying the method measuring metallic nickel silicon compound lateral growth rate on trap.
Be described in further detail structure provided by the invention and method by the following examples, better to understand the invention content, but the content of embodiment does not limit the protection range of the invention.
As shown in Figure 1, the present invention is selected in the ion trap (N or P type) forming a type in same active area and exists, layer of metal nickel silicide is grown above this ion trap, the first contact hole is formed again on metallic nickel silicide, simultaneously on its limit certain distance active area on connect the second contact hole, measure the distance L between the first contact hole and the second contact hole.
Because this tungsten contact hole of difference of ion trap polarity can be shown as different bright dark intensity under a scanning electron microscope, the tungsten contact hole connecting P type ion trap under electric field is bright, and the tungsten contact hole above N-type is dark.Fig. 2 display be situation when brightness is different in the contact hole on metallic nickel silicide and the contact hole on active area.
Device is processed, metallic nickel silicon compound is grown along level orientation, and monitor the brightness change in the first contact hole and the second contact hole.When there being the contact hole on metallic nickel silicide the same with the brightness in the contact hole on active area as shown in Figures 3 and 4, just indicate that metallic nickel silicide has grown into the position of the contact hole of adjacency, record the growth length on metallic nickel silicide on trap, then by the process time just can calculate metallic nickel silicide trap on the growth rate of metallic nickel silicide.
By adjusting the ion concentration of metallic nickel silicide on the distance L of the opinion of the first contact hole and the second contact hole and trap, nickel metal silicide planar growth rate in variable concentrations ion trap can be measured.In experimentation, will have the ion trap structure of variable concentrations, and place it on the segmentation road of wafer, on the wafer shown in observing with electron microscope observation, contact hole is secretly bright.The growth rate of this position is calculated according to the reaction time of the Distance geometry technique between bright secretly identical contact hole, and obtained the distribution map of the nickel metal suicide growth speed of quantized values by the observation of diverse location on whole wafer, thus better control the quality of this technique.
Be described in detail specific embodiments of the invention above, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and substituting also all among category of the present invention.Therefore, equalization conversion done without departing from the spirit and scope of the invention and amendment, all should contain within the scope of the invention.
Claims (6)
1. one for measuring the structure of metallic nickel silicon compound lateral growth rate on trap, comprises an active area, it is characterized in that, described active area is provided with ion trap, described ion trap is provided with metallic nickel silicon compound, is provided with the first contact hole above described metallic nickel silicon compound
Described active area is provided with the second contact hole, there is not metallic nickel silicon compound in described second contact hole.
2. structure according to claim 1, is characterized in that, described ion trap is N-type or P type.
3. structure according to claim 1, is characterized in that, described active area is N-type or P type.
4. utilize a method for metallic nickel silicon compound lateral growth rate on structure determination trap described in claim 1, it is characterized in that, comprise the following steps:
First, with brightness in sem observation first contact hole and the second contact hole, described first contact hole bottom-exposed goes out active area, and described second contact hole arranges bottom-exposed and goes out metallic nickel silicon compound above ion trap;
Secondly, metallic nickel silicon compound is allowed to grow along level orientation, and the brightness change of monitoring in the first contact hole and the second contact hole, stop the growth of metallic nickel silicon compound when brightness changes, record growth time and the distance between the first contact hole and the second contact hole;
Finally, the growth rate of metallic nickel silicon compound is calculated according to the data recorded.
5. method according to claim 4, is characterized in that, described ion trap is N-type or P type.
6. method according to claim 4, is characterized in that, described active area is N-type or P type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210204477.2A CN102723323B (en) | 2012-06-20 | 2012-06-20 | Structure for assaying plane growth rate of metal nickel silicon compound on hydrazinium and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210204477.2A CN102723323B (en) | 2012-06-20 | 2012-06-20 | Structure for assaying plane growth rate of metal nickel silicon compound on hydrazinium and method thereof |
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| Publication Number | Publication Date |
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| CN102723323A CN102723323A (en) | 2012-10-10 |
| CN102723323B true CN102723323B (en) | 2015-05-06 |
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| CN201210204477.2A Active CN102723323B (en) | 2012-06-20 | 2012-06-20 | Structure for assaying plane growth rate of metal nickel silicon compound on hydrazinium and method thereof |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102443787A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for selectively growing nickel |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102443787A (en) * | 2011-10-12 | 2012-05-09 | 上海华力微电子有限公司 | Method for selectively growing nickel |
Non-Patent Citations (1)
| Title |
|---|
| NiSi/Si界面的剖面透射电镜研究(英文);蒋玉龙等;《半导体学报》;20060208(第02期);全文 * |
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| CN102723323A (en) | 2012-10-10 |
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