CN102709052A - Method for manufacturing nano capacitor - Google Patents
Method for manufacturing nano capacitor Download PDFInfo
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- CN102709052A CN102709052A CN2012102057607A CN201210205760A CN102709052A CN 102709052 A CN102709052 A CN 102709052A CN 2012102057607 A CN2012102057607 A CN 2012102057607A CN 201210205760 A CN201210205760 A CN 201210205760A CN 102709052 A CN102709052 A CN 102709052A
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Abstract
The embodiment of the invention discloses a method for manufacturing a nano capacitor, which comprises the steps of: forming at least one metal nano particle layer on a substrate; forming a dielectric material layer on the surface of metal nano particles in the at least one metal nano particle layer; and depositing a polymer composite material on the dielectric material layer to form a polymer composite material layer. In the embodiment of the invention, the metal nano particle layer is formed on the substrate, then the dielectric material layer is formed on the surface of the metal nano particles on the substrate, then the polymer composite material layer is formed on the surface of the dielectric material layer, therefore, a nano capacitor with a metal nano particle-dielectric material layer-polymer composite material structure is formed. The metal nano particles of the formed metal nano particle layer are high in density and large in specific surface area, therefore the formed nano capacitor is high in energy density; and a large-area nano capacitor array can be realized.
Description
Technical field
The present invention relates to a kind of method of making capacitor, especially relate to a kind of method of making nano capacitor.
Background technology
Capacitor is as using energy storage device the most widely, also received stern challenge with the development of energy resource system demand.Traditional electrostatic condenser, its working mechanism is based on positive and negative electrode stored charge and electric charge release fast, so electrostatic condenser has higher power density.But, for electrostatic condenser, owing to have only surface charge to be used in its charge stored, so the energy density density of electrostatic condenser is not high.
In recent ten years, the development of ultracapacitor (also being electrochemical capacitor) is swift and violent, and electric chemical super capacitor makes to have bigger energy density on the electrode interface through electric double layer (or Faraday effect) stored charge.But, compare traditional electrostatic condenser and yet have a certain distance because the migration (or oxidation-reduction process of electrode interface) of the need of work ion of capacitor makes that the power density of electrochemical capacitor is lower.Therefore, exploitation has the emphasis direction that the energy storage capacitor of high power density and high-energy-density characteristics is energy-storage system development of future generation concurrently.
Compare with electrochemical capacitor, the present energy density of electrostatic condenser is lower, is that working mechanism has limited its energy density and further improves on the one hand, is owing to lack the capacitor arrangement that effective assembling means are difficult to obtain height ratio capacity on the other hand.At present; High power density is the intrinsic advantage of electrostatic condenser; But the lower big limitations of energy density the development and the scope of application of conventional electrostatic capacitor; The Gonna breakthrough electrostatic condenser scope of application also obtains better development, must improve the energy density of capacitor, satisfies various energy resource systems to the requirement of high-performance energy storage device through the raising of energy density.
Development with nanometer technology; Present energy-storage system of future generation is more and more urgent to the demand of micro-/ nano yardstick energy storage device; The development of this inevitable requirement can provide the nano cell or the nano capacitor of the energy for MEMS (MEMS) and nanoelectronic circuit, and present nanometer energy storage capacitor reaches requirement far away on size and energy storage density.And the research that at present relevant nano structural material is applied to nano capacitor concentrates on the electrochemical capacitor aspect mostly, and less aspect traditional electrostatic condenser.
The method of existing manufacturing nano capacitor can not realize large tracts of land capacitor arrangement array, and capacitor energy density is less, and the operation more complicated.
Summary of the invention
One of the object of the invention provides a kind of nano capacitor manufacturing approach that can make the nano capacitor with high-energy-density.
One of the object of the invention provides a kind of nano capacitor manufacturing approach that can realize large-area nano capacitor arrangement array.
The disclosed technical scheme of the embodiment of the invention comprises:
A kind of method of making nano capacitor is characterized in that, comprising: on substrate, form layer of metal nanoparticle layers at least; Surfaces of metal nanoparticles in the said metal nanoparticle layer of one deck at least forms dielectric materials layer; The deposited polymer composite material is to form polymer composite layer on said dielectric materials layer.
Further, saidly form on substrate at least that the layer of metal nanoparticle layers comprises: metal nanoparticle is disperseed to be dissolved in the solvent, form metal nanoparticle solution; Said metal nanoparticle drips of solution is added to parfacies liquid surface, makes said metal nanoparticle disperse to sprawl in said parfacies liquid surface; Compression is sprawled in the said metal nanoparticle on said parfacies liquid surface, forms the metal nanoparticle film; Said metal nanoparticle film is transferred on the said substrate, on said substrate, formed layer of metal nanoparticle layers at least.
Further, wherein said metal nanoparticle film is transferred on the said substrate and comprised: use vertical czochralski method, horizontal attachment method or parfacies liquid to reduce method said metal nanoparticle film is transferred on the said substrate.
Further, wherein said metal nanoparticle is aluminium nano particle or tantalum nano particle.
Further, wherein said substrate is tin indium oxide substrate, stainless steel substrate, platinum substrate or auri sheet.
Further, wherein the surfaces of metal nanoparticles deposition of dielectric materials in the said metal nanoparticle layer of one deck at least comprises to form dielectric materials layer: will form at least the said substrate of one deck metal nanoparticle layer and insert in the acidic aqueous solution; Use electrochemical method to form metal oxide layer on the surface of said on-chip said metal nanoparticle, said metal oxide layer is dielectric materials layer.
Further, said acidic aqueous solution is phosphate aqueous solution or aqueous sulfuric acid.
Further, wherein comprise to form polymer composite layer: will insert the very first time in the cationic polymer electrolyte solution at the said substrate that surfaces of metal nanoparticles has formed dielectric materials layer at deposited polymer composite material on the said dielectric materials layer; To have been inserted the said substrate of the very first time in the cationic polymer electrolyte solution and inserted second time in the anionic polymer electrolyte solution; Perhaps: will insert second time in the anionic polymer electrolyte solution at the said substrate that surfaces of metal nanoparticles has formed dielectric materials layer; To have been inserted the said substrate of second time in the anionic polymer electrolyte solution and inserted the very first time in the cationic polymer electrolyte solution.
Further, wherein said cationic polymer electrolyte is for can ionization being cationic polymer in water, and said anionic polymer electrolyte is can ionization be anionic polymer in water.
Further; Wherein said cationic polymer electrolyte is PDDA, PDDA or polyacrylamide; Said anionic polymer electrolyte is for gathering-3,4-enedioxy thiophene-kayexalate.
In the embodiment of the invention; On substrate, form metal nanoparticle layer; Form dielectric materials layer on the surface of on-chip metal nanoparticle then; And then, formed the nanometer electric capacity of metal nanoparticle-dielectric materials layer-polymer composite layer structure like this in the surface of this dielectric materials layer formation polymer composite layer.The metal nanoparticle layer metal nanoparticle density that forms like this is high, and specific area is big, and the nano capacitor energy density that therefore forms is high, and can realize the large-area nano array of capacitors.
Description of drawings
Fig. 1 is the sketch map of flow process of the manufacturing nano capacitor of one embodiment of the invention;
Fig. 2 is the sketch map that on substrate, forms the flow process of metal nanoparticle layer of one embodiment of the invention;
Fig. 3 is the use LB film device of one embodiment of the invention forms metal nanoparticle layer on substrate a sketch map;
Fig. 4 is the sketch map of the formation nano capacitor of one embodiment of the invention.
Embodiment
As shown in Figure 1, in the one embodiment of the invention, a kind of method of making nano capacitor comprises step 10, step 12 and step 14.
Step 10: on substrate, form metal nanoparticle layer;
The particle of Nano grade has very big specific area.In the embodiment of the invention, serve as that the basis forms capacitor with the metal nanoparticle of Nano grade, metal nanoparticle is as the anode of capacitor.Such capacitor can have very high energy density.
In the embodiment of the invention, at first the metal nanoparticle with Nano grade is attached on the substrate on substrate, to form layer of metal nanoparticle layers at least.In the embodiment of the invention; Metal nanoparticle can be the metal nanoparticle that in solvent (such as volatile organic solution), has good dispersive property; Such as aluminium (Al) nano particle or tantalum (Ta) nano particle; Wherein " metal nanoparticle " can be metallic atom group, such as aluminium atomic group or tantalum atom group or the like.Certainly, one of ordinary skill in the art will readily recognize that it also can is other the metal nanoparticle of metal that is suitable for being used for making nano capacitor.
In the embodiment of the invention; Substrate can be any conductive substrate that can form metal nanoparticle layer (metal nanoparticle film) above that; Such as tin indium oxide (ITO) substrate, can certainly be the substrate of other type, such as stainless steel substrate, platinum substrate or auri sheet or the like.
Metal nanoparticle is attached on the substrate to form at least the method for layer of metal nanoparticle layers can uses LB (Langmuir-Blodgett) film method.The metal nanoparticle film that uses the LB film method can on substrate, form high density, arrange in order.
In the one embodiment of the invention, as shown in Figure 2, on substrate, forming at least, the method for layer of metal nanoparticle layers comprises step 22, step 24, step 26 and step 28.
Step 22: metal nanoparticle is disperseed to be dissolved in the solvent, form metal nanoparticle solution;
At first, metal nanoparticle is disperseed to be dissolved in the solvent, form metal nanoparticle solution.In the embodiment of the invention, this solvent is volatile organic solvent, such as chloroform, n-hexane, benzene, toluene, N, and dinethylformamide or methyl-sulfoxide or the like.
For example, in the one embodiment of the invention, can aluminium (Al) nano particle disperseed to be dissolved in N, in the dinethylformamide solvent, the concentration of aluminium nano particle can be 0.3-0.5 mg/ml (mg/ml), thereby forms metal nanoparticle solution.
Step 24: the metal nanoparticle drips of solution is added to parfacies liquid surface;
Obtain a certain amount of metal nanoparticle drips of solution to be added to the surface of parfacies liquid after the metal nanoparticle solution.After the metal nanoparticle drips of solution was added to parfacies liquid surface, solvent can be with metal nanoparticle to disperse drawout on parfacies liquid surface.Through after the certain hour, solvent evaporates, like this, the metal nanoparticle that stays wherein disperses to sprawl on the surface of parfacies liquid.
In the embodiment of the invention, parfacies liquid can be ultra-pure water.
For example; In the one embodiment of the invention; Adopt microsyringe to extract 200-250 microlitre (μ l) aluminium nano particle in step 22 and disperse to be dissolved in N, in the dinethylformamide solvent and the metal nanoparticle drips of solution that obtains is added on the ultra-pure water surface in the LB film groove, treat N; Dinethylformamide volatilization 30 minutes, this moment, the aluminium nano particle disperseed to spread on the gas/liquid interface of ultra-pure water.
Step 26: the metal nanoparticle on compression parfacies liquid surface forms the metal nanoparticle film;
After the solvent evaporates, in the LB film device, use the surperficial metal nanoparticle of sliding barrier compression parfacies liquid to the film forming mould, thereby form the metal nanoparticle film on parfacies liquid surface.
In the embodiment of the invention, can use common LB film device to carry out metal nanoparticle is attached to each step that forms metal nanoparticle layer (metal nanoparticle film) on the substrate, so the LB film device is not described in detail at this.
For example; In the one embodiment of the invention; After in step 24, spreading into the dispersion of aluminium nano particle on the ultra-pure water parfacies liquid surface; In this step, the sliding barrier of control LB film device arrives film forming mould 30-35 milli newton/meter (mN/m) with the speed compression aluminium nano particle of 2-3 mm/min (mm/min).Like this, on ultra-pure water parfacies liquid level, formed the aluminium film of nanoparticles.
Step 28: the metal nanoparticle film is transferred on the substrate;
On the parfacies liquid level, formed after the metal nanoparticle film, can this metal nanoparticle film have been transferred on the substrate, like this, promptly on substrate, formed metal nanoparticle layer.One of ordinary skill in the art will readily recognize that the metal nanoparticle layer that on substrate, forms can be one deck, also can be multilayer, can set flexibly, such as 3 layers, 5 layers or 10 layers or the like according to the needs of reality.The size of metal nanoparticle also can be provided with according to the needs of actual conditions flexibly.Through the number of plies of adjustment metal nanoparticle and/or the size of metal nanoparticle, can adjust the capacitance of the nano capacitor of formation.
In the embodiment of the invention, can adopt the transfer method in any LB film method that the lip-deep metal nanoparticle film of parfacies liquid is transferred on the substrate, such as vertical czochralski method, horizontal attachment method or parfacies liquid reduction method or the like.These methods are the common methods in the LB film method, repeat no more at this.
For example, in the one embodiment of the invention, in step 26, obtain in this step, to adopt vertical czochralski method that the aluminium film of nanoparticles is transferred on the ITO substrate after the aluminium film of nanoparticles, rate of film build is 0.2 mm/min (mm/min).Like this, on substrate, formed the aluminium nanoparticle layers, this aluminium nanoparticle layers can be used as the anode of nano capacitor.
Fig. 3 is the use LB film device of one embodiment of the invention forms metal nanoparticle layer on substrate a sketch map.In Fig. 3, used vertical czochralski method that metal nanoparticle is transferred on the substrate.As shown in Figure 3, parfacies liquid 1 is contained in the LB film groove 2, and metal nanoparticle 4 disperses to spread on the surface of parfacies liquid 1, and sliding barrier 3 compressed metal nano particles 4 make metal nanoparticle 4 on the surface of parfacies liquid 1, form the metal nanoparticle film to the film forming mould.Substrate 5 stretches into the LB film groove 2 from the zone of metal nanoparticle film, after metal nanoparticle 4 is compressed to the film forming mould by sliding barrier 3, upwards lifts substrate 5 with certain speed, lifts in the process at this, and the metal nanoparticle film is transferred on the substrate 5.Thisly lift operation and can carry out repeatedly repeatedly, thereby on substrate, form the multiple layer metal nanoparticle layers.
Step 12: form dielectric materials layer in surfaces of metal nanoparticles;
In the embodiment of the invention, on substrate, form after the metal nanoparticle layer, coat in on-chip surfaces of metal nanoparticles and form one deck dielectric materials layer, this dielectric materials layer is as the dielectric material of nano capacitor.In the embodiment of the invention, dielectric material can be a metal oxide, such as aluminium oxide (Al
2O
3), tantalum oxide (Ta
2O
5).In fact, in the embodiments of the invention, dielectric materials layer can be the metal oxide layer with the metal of metal nanoparticle same type.
In the embodiment of the invention, can adopt electrochemical method to form dielectric materials layer in on-chip surfaces of metal nanoparticles.For example; In the one embodiment of the invention; Insert in the acidic aqueous solution having formed at least the substrate of one deck metal nanoparticle layer, use electrochemical method on the surface of on-chip metal nanoparticle, to form metal oxide layer then, this metal oxide layer is dielectric materials layer.
The electrochemical method that uses in the embodiment of the invention can be the electrochemical method of using always; Substrate through having formed metal nanoparticle layer places acidic aqueous solution; After applying certain voltage and current; Oxidation reaction takes place in the surface at metal nanoparticle, thereby forms certain thickness metal oxide layer on the surface of metal nanoparticle.The thickness of metal oxide layer can be through applying the voltage swing regulation and control, and the time that forms oxide skin(coating) can be controlled through the size that applies electric current.The control mode of the concrete steps of this electrochemical method and voltage, electric current can be used electrochemical method step and mode commonly used, is not described in detail at this.
In the embodiment of the invention, wherein acidic aqueous solution can be phosphate aqueous solution or aqueous sulfuric acid.Acid can be (5-7) % with the volume ratio of water in the acidic aqueous solution.
For example; In the one embodiment of the invention; In step 28, the aluminium film of nanoparticles transferred on the ITO substrate and form after the aluminium nanoparticle layers; In this step, the volume ratio that the ITO substrate that has deposited the aluminium nanoparticle layers is put into phosphoric acid and water is 5% phosphate aqueous solution, adopts electrochemical method at the dielectric materials layer of aluminium nanoparticle surface aluminum oxide layer as nano capacitor.
Step 14: on dielectric materials layer, form polymer composite layer;
After on-chip surfaces of metal nanoparticles has formed dielectric materials layer, on the dielectric materials layer of this metal nanoparticle, form polymer composite layer again, this polymer composite layer is as the negative electrode of nano capacitor.Like this, can obtain the nano capacitor of metal-metallic oxide-polymer composites structure.
In the embodiment of the invention, adopt the surface deposition polymer composite layer of the method for chemical static self assembly at dielectric materials layer.
For example, in the one embodiment of the invention, the substrate that at first will be have formed dielectric materials layer on its surface of metal nanoparticle of metal nanoparticle layer is inserted the very first time in the cationic polymer electrolyte solution.Here " very first time " refers to the time period of a predetermined length.
Then, will pass through that the cationic polymer electrolyte solution handles, and promptly inserted in the cationic polymer electrolyte solution substrate after the very first time and inserted second time in the anionic polymer electrolyte solution.Here " second time " refers to the time period of a predetermined length.
Inserted in the time in cationic polymer electrolyte solution and the anionic polymer electrolyte solution at substrate; Under chemical electrostatic interaction; Polymer cation in the solution and anion are deposited on the surface of the dielectric materials layer of on-chip surfaces of metal nanoparticles, thereby form polymer composite layer on the surface of this dielectric materials layer.Like this, through the processing of cationic polymer electrolyte solution and anionic polymer electrolyte solution, can be in the surface formation polymer composite layer of the dielectric materials layer of on-chip surfaces of metal nanoparticles.
In the embodiment of the invention; To the not restriction of substrate being handled with positive particulate polymer electrolyte solution and anionic polymer electrolyte solution of priority step; Promptly also can be earlier the substrate that has formed dielectric materials layer in surfaces of metal nanoparticles be inserted second time in the anionic polymer electrolyte solution, and then will have been inserted the substrate of second time in the anionic polymer electrolyte solution and insert the very first time in the cationic polymer electrolyte solution
In the embodiment of the invention, this process cationic polymer electrolyte solution is handled and can be carried out repeatedly repeatedly with the surface at the dielectric materials layer of on-chip surfaces of metal nanoparticles through anionic polymer electrolyte solution processed steps and forms polymer composite layer.
In the embodiment of the invention, after substrate takes out from cationic polymer electrolyte solution or anionic polymer electrolyte solution, can also comprise drying steps, make substrate dry.
In the embodiment of the invention; The cationic polymer electrolyte is can ionization be cationic polymer in water; For example can be PDDA, PDDA or polyacrylamide or the like, wherein the volume ratio of PDDA, PDDA or polyacrylamide and water all can be (5-7) % in this cationic polymer electrolyte solution.
In the embodiment of the invention; The anionic polymer electrolyte is can ionization be anionic polymer in water; For example can be for gathering-3; 4-enedioxy thiophene-kayexalate or the like wherein gathers-3 in this anionic polymer electrolyte solution, the volume ratio of 4-enedioxy thiophene-kayexalate and water can be (3-5) %.
In the embodiment of the invention, the very first time can be 5 minutes, and second time can be 5 minutes.One of ordinary skill in the art will readily recognize that this very first time and second time is not limited to 5 minutes, also can be other any suitable time span, can decide according to the actual conditions needs.
For example; In the one embodiment of the invention; 5% (volume ratio) PDDA (PDDA) aqueous solution is immersed after 5 minutes, drying at room temperature 20 minutes in the ITO substrate elder generation having deposited the aluminium oxide dielectric materials layer on the surface of aluminium nano particle in the step 12; And then immerse 5% (volume ratio) and gather-3,4-enedioxy thiophene-kayexalate (PEDOT-PSS) aqueous solution 5 minutes, drying at room temperature 20 minutes; Repeat above step repeatedly.Like this, can be on the surface of the aluminium oxide dielectric materials layer of the aluminium nanoparticle surface of substrate deposition PDDA/PEDOT-PSS polymer composite layer, this polymer composite layer is as another electrode of nano capacitor.Like this, promptly obtained Al-Al
2O
3The nano capacitor of-PDDA/PEDOT-PSS structure.
Fig. 4 is the sketch map of the formation nano capacitor of one embodiment of the invention.One of ordinary skill in the art will readily recognize that among Fig. 4 to be that example is illustrated with a metal nanoparticle only, other metal nanoparticle forms similar among process and Fig. 4 of nano capacitor.
As shown in Figure 4, in step 10, metal nanoparticle 4 is attached on substrate 5; In step 12, the surface of this metal nanoparticle 4 forms dielectric materials layer 6 then; In step 14, the surface of the dielectric materials layer 6 of this metal nanoparticle 4 forms polymer composite layer 7 then.Like this, this metal nanoparticle 4 has promptly constituted nano capacitor.On substrate, form the metal nanoparticle film of one deck at least that high density arranges in order and wherein each metal nanoparticle all formed such nano capacitor, like this, promptly obtained the nano capacitor of high-energy-density.When the metal nanoparticle film forms multilayer and/or large tracts of land array, can realize the large-area nano array of capacitors.
In the embodiment of the invention; On substrate, form metal nanoparticle layer; Form dielectric materials layer in on-chip surfaces of metal nanoparticles then; And then form polymer composite layer on the surface of the dielectric materials layer of on-chip surfaces of metal nanoparticles, form the nanometer electric capacity of metal nanoparticle-dielectric materials layer-polymer composite layer structure like this.The metal nanoparticle layer metal nanoparticle density that forms is high, and specific area is big, and the nano capacitor energy density that therefore forms is high, and can realize the large-area nano array of capacitors.
In the embodiment of the invention; The basis material of nano capacitor is the LB membrane structure that metal nanoparticle forms; Have big surface, and can realize large-area nano capacitor arrangement array through LB film deposit multilayer and single-layer metal nano particle structure to obtain the nano capacitor array structure.This nano capacitor based on metal nanoparticle and high density ordered structure can have the advantage of high-energy-density and high power density concurrently, can satisfy the many-sided different needs of energy-storage system.And the preparation method is rationally simple, easy operating.
More than describe the present invention through concrete embodiment, but the present invention is not limited to these concrete embodiment.It will be understood by those skilled in the art that and to make various modifications to the present invention, be equal to replacement, change or the like that these conversion all should be within protection scope of the present invention as long as do not deviate from spirit of the present invention.In addition, above many places described " embodiment " representes various embodiment, can certainly be with its all or part of being combined among the embodiment.
Claims (10)
1. a method of making nano capacitor is characterized in that, comprising:
On substrate, form layer of metal nanoparticle layers at least;
Surfaces of metal nanoparticles in the said metal nanoparticle layer of one deck at least forms dielectric materials layer;
The deposited polymer composite material is to form polymer composite layer on said dielectric materials layer.
2. the method for claim 1 is characterized in that, wherein saidly forms on substrate at least that the layer of metal nanoparticle layers comprises:
Metal nanoparticle is disperseed to be dissolved in the solvent, form metal nanoparticle solution;
Said metal nanoparticle drips of solution is added to parfacies liquid surface, makes said metal nanoparticle disperse to sprawl in said parfacies liquid surface;
Compression is sprawled in the said metal nanoparticle on said parfacies liquid surface, forms the metal nanoparticle film;
Said metal nanoparticle film is transferred on the said substrate, on said substrate, formed layer of metal nanoparticle layers at least.
3. method as claimed in claim 2; It is characterized in that, wherein said metal nanoparticle film is transferred on the said substrate and comprised: use vertical czochralski method, horizontal attachment method or parfacies liquid to reduce method said metal nanoparticle film is transferred on the said substrate.
4. method as claimed in claim 2 is characterized in that, wherein said metal nanoparticle is aluminium nano particle or tantalum nano particle.
5. method as claimed in claim 2 is characterized in that, wherein said substrate tin indium oxide substrate, stainless steel substrate, platinum substrate or auri sheet.
6. the method for claim 1 is characterized in that, wherein the formation of the surfaces of metal nanoparticles in the said metal nanoparticle layer of one deck at least dielectric materials layer comprises:
Insert in the acidic aqueous solution having formed at least the said substrate of one deck metal nanoparticle layer;
Use electrochemical method to form metal oxide layer on the surface of said on-chip said metal nanoparticle, said metal oxide layer is dielectric materials layer.
7. method as claimed in claim 6 is characterized in that, said acidic aqueous solution is phosphate aqueous solution or aqueous sulfuric acid.
8. the method for claim 1 is characterized in that, wherein the deposited polymer composite material comprises to form polymer composite layer on said dielectric materials layer:
To insert the very first time in the cationic polymer electrolyte solution at the said substrate that surfaces of metal nanoparticles has formed dielectric materials layer;
To have been inserted the said substrate of the very first time in the cationic polymer electrolyte solution and inserted second time in the anionic polymer electrolyte solution;
Perhaps:
To insert second time in the anionic polymer electrolyte solution at the said substrate that surfaces of metal nanoparticles has formed dielectric materials layer;
To have been inserted the said substrate of second time in the anionic polymer electrolyte solution and inserted the very first time in the cationic polymer electrolyte solution.
9. method as claimed in claim 8 is characterized in that, wherein said cationic polymer electrolyte is for can ionization being cationic polymer in water, and said anionic polymer electrolyte is can ionization be anionic polymer in water.
10. method as claimed in claim 9; It is characterized in that; Wherein said cationic polymer electrolyte is PDDA, PDDA or polyacrylamide; Said anionic polymer electrolyte is for gathering-3,4-enedioxy thiophene-kayexalate.
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