CN102708797A - Drive circuit and organic light emitting display - Google Patents

Drive circuit and organic light emitting display Download PDF

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Publication number
CN102708797A
CN102708797A CN2012100936046A CN201210093604A CN102708797A CN 102708797 A CN102708797 A CN 102708797A CN 2012100936046 A CN2012100936046 A CN 2012100936046A CN 201210093604 A CN201210093604 A CN 201210093604A CN 102708797 A CN102708797 A CN 102708797A
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China
Prior art keywords
thin film
film transistor
tft
grid
film transistors
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CN2012100936046A
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Chinese (zh)
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CN102708797B (en
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李天马
祁小敬
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to CN201210093604.6A priority Critical patent/CN102708797B/en
Publication of CN102708797A publication Critical patent/CN102708797A/en
Priority to PCT/CN2012/087181 priority patent/WO2013143332A1/en
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243—Details of the generation of driving signals
    • G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

The invention provides a drive circuit and an organic light emitting display. The drive circuit comprises a drive thin-film transistor, a first switch element, a storage capacitor and a drive control circuit. A grid electrode of the drive thin-film transistor is connected with a first end of the storage capacitor and is further connected with a drain electrode of the drive thin-film transistor through the drive control unit. A source electrode of the drive thin-film transistor is connected with a data line through the drive control unit, a second end of the storage capacitor is connected with the drain electrode of the drive thin-film transistor through the drive control unit, the first switch element is serially connected between a positive electrode of the OLED (organic light emitting display) and a high-level output end of a drive power supply. The drive control unit controls the drive thin-film transistor to work in a saturated area by controlling charging and discharging of the storage capacitor and compensates threshold voltage of the drive thin-film transistor to grid source voltage of the drive thin-film transistor through the storage capacitor. The drive circuit can solve the problems of uniform luminance and luminance attenuation of the organic light emitting display.

Description

Driving circuit and OLED
Technical field
The present invention relates to a kind of organic light emitting display field, relate in particular to a kind of driving circuit and OLED.
Background technology
Existing pixel cell driving circuit is as shown in Figure 1; This driving circuit comprises two transistors and an electric capacity, and one of them transistor is a switch transistor T 1, and the sweep signal Vscan that is exported by sweep trace controls; Purpose is the input for the data-signal Vdata on the control data line Data; Another transistor is driving tube T2, and control OLED (Organic Light Emitting Diode, Organic Light-Emitting Diode) is luminous; Cs is a MM CAP, is used for keeping the voltage that driving tube T2 is applied in non-scan period, and foregoing circuit is called as 2T1C pixel cell driving circuit.
AMOLED is driven by the electric current that driving transistors produces when the state of saturation, because when importing identical gray scale voltage, the different threshold voltage of said driving transistors can cause producing different drive currents, causes the inconsistency of electric current.And the non-constant of homogeneity of LTPS (Low Temperature Poly-silicon, low temperature polycrystalline silicon technology) processing procedure upper threshold voltage Vth, Vth also has drift simultaneously, and therefore the brightness uniformity of traditional 2T1C pixel cell driving circuit is very poor always.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of driving circuit and OLED, to improve the luminance uniformity of OLED.
In order to achieve the above object, the invention provides a kind of driving circuit, comprise drive thin film transistors, first on-off element, MM CAP and driving control unit;
The grid of said drive thin film transistors is connected with first end of said MM CAP, also is connected with the drain electrode of said drive thin film transistors through said driving control unit;
The source electrode of said drive thin film transistors is connected with the low level output terminal of data line and said driving power respectively through said driving control unit;
The drain electrode of said drive thin film transistors is connected with the negative electrode of OLED;
Second end of said MM CAP also is connected with the drain electrode of said drive thin film transistors and the low level output terminal of driving power respectively through said driving control unit;
Said first on-off element is series between the high level output terminal of anode and driving power of said OLED;
Said drive thin film transistors is a n type thin film transistor (TFT);
Said driving control unit; Be used for discharging and recharging through controlling said MM CAP; Work in the saturation region and give the gate source voltage compensation Vth of said drive thin film transistors through MM CAP to control said drive thin film transistors, wherein, Vth is the threshold voltage of said drive thin film transistors.
During enforcement, said driving control unit comprises second switch element, the 3rd on-off element, the 4th on-off element, the 5th on-off element and the 6th on-off element;
Be connected with the second switch element between second end of said MM CAP and the drain electrode of said drive thin film transistors;
Be connected with the 3rd on-off element between the grid of said drive thin film transistors and the drain electrode;
Be connected with the 4th on-off element between second end of said MM CAP and the low level output terminal of said driving power;
Be connected with the 5th on-off element between the source electrode of said drive thin film transistors and the said data line;
Be connected with the 6th on-off element between the low level output terminal of the source electrode of said drive thin film transistors and said driving power.
During enforcement; Said first on-off element is the first film transistor; Said second switch element is second thin film transistor (TFT), and said the 3rd on-off element is the 3rd thin film transistor (TFT), and said the 4th on-off element is the 4th thin film transistor (TFT); Said the 5th on-off element is the 5th thin film transistor (TFT), and said the 6th on-off element is the 6th thin film transistor (TFT);
Said drive thin film transistors, source electrode is connected with the drain electrode of said the 6th thin film transistor (TFT);
Said the first film transistor, grid is connected with the first grid control line, and source electrode is connected with the anode of said OLED, and drain electrode is connected with the high level output terminal of driving power;
Said second thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with the source electrode of said the 4th thin film transistor (TFT) and second end of said MM CAP respectively, and drain electrode is connected with the source electrode of said the 3rd thin film transistor (TFT);
Said the 3rd thin film transistor (TFT), grid is connected with the second grid control line, and drain electrode is connected with the grid of said drive thin film transistors;
Said the 4th thin film transistor (TFT), grid is connected grounded drain with the second grid control line;
Said the 5th thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with data line, and drain electrode is connected with the source electrode of said drive thin film transistors;
Said the 6th thin film transistor (TFT), grid is connected source ground with the second grid control line;
Said the first film transistor, said second thin film transistor (TFT) and said the 6th thin film transistor (TFT) are n type thin film transistor (TFT), and said the 3rd thin film transistor (TFT), said the 4th thin film transistor (TFT) and said the 5th thin film transistor (TFT) are p type thin film transistor (TFT).
The present invention also provides a kind of OLED, comprises OLED and above-mentioned driving circuit.
The present invention also provides a kind of driving circuit, comprises drive thin film transistors, first on-off element, MM CAP and driving control unit;
The grid of said drive thin film transistors is connected with first end of said MM CAP, also is connected with the drain electrode of said drive thin film transistors through said driving control unit;
The source electrode of said drive thin film transistors is connected with the high level output terminal of data line and said driving power respectively through said driving control unit;
The drain electrode of said drive thin film transistors is connected with the anode of OLED through said first on-off element;
Second end of said MM CAP is connected with the high level output terminal of said driving power and the low level output terminal of said driving power respectively through said driving control unit;
The negative electrode of said OLED is connected with the low level output terminal of driving power.
Said driving control unit; Be used for discharging and recharging through controlling said MM CAP; Work in the saturation region and give the gate source voltage compensation Vth of said drive thin film transistors through MM CAP to control said drive thin film transistors, wherein, Vth is the threshold voltage of said drive thin film transistors;
Said drive thin film transistors is a p type thin film transistor (TFT).
During enforcement, said driving control unit comprises second switch element, the 3rd on-off element, the 4th on-off element, the 5th on-off element and the 6th on-off element, wherein,
Be connected with the second switch element between second end of said MM CAP and the ground wire;
Be connected with the 3rd on-off element between the grid of said drive thin film transistors and the drain electrode of said drive thin film transistors;
Be connected with the 4th on-off element between second end of said MM CAP and the high level output terminal of said driving power;
Be connected with the 5th on-off element between the source electrode of said drive thin film transistors and the said data line;
Be connected with the 6th on-off element between the high level output terminal of the source electrode of said drive thin film transistors and said driving power.
During enforcement; Said first on-off element is the first film transistor; Said second switch element is second thin film transistor (TFT), and said the 3rd on-off element is the 3rd thin film transistor (TFT), and said the 4th on-off element is the 4th thin film transistor (TFT); Said the 5th on-off element is the 5th thin film transistor (TFT), and said the 6th on-off element is the 6th thin film transistor (TFT);
The source electrode of said drive thin film transistors is connected with the drain electrode of said the 5th thin film transistor (TFT) and the source electrode of said the 6th thin film transistor (TFT) respectively, and drain electrode is connected with said the first film transistor drain;
Said the first film transistor, grid is connected with the first grid control line, and source electrode is connected with the anode of said OLED, and drain electrode is connected with the drain electrode of said the 3rd thin film transistor (TFT);
Said second thin film transistor (TFT), grid is connected with the second grid control line, source ground, drain electrode is connected with second end of said MM CAP;
Said the 3rd thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with the grid of said drive thin film transistors;
Said the 4th thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with the high level output terminal of driving power, and drain electrode is connected with second end of said MM CAP;
Said the 5th thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with data line;
Said the 6th thin film transistor (TFT), grid is connected with the second grid control line, and drain electrode is connected with the high level output terminal of driving power;
Said the first film transistor, said second thin film transistor (TFT) and said the 6th thin film transistor (TFT) are n type thin film transistor (TFT), and said the 3rd thin film transistor (TFT), said the 4th thin film transistor (TFT) and said the 5th thin film transistor (TFT) are p type thin film transistor (TFT).
The present invention also provides a kind of OLED, comprises OLED and above-mentioned driving circuit;
The negative electrode of said OLED is connected with the low level output terminal of driving power.
Compared with prior art; Driving circuit of the present invention and OLED; The threshold voltage of the drive thin film transistors of the gate source voltage compensation driving OLED through driving control unit controlling and driving thin film transistor (TFT), thus the inhomogeneous problem with brightness decay of AMOLED panel luminance solved.
Description of drawings
Fig. 1 is the circuit diagram of existing pixel cell driving circuit;
Fig. 2 is the circuit diagram of the described driving circuit of first embodiment of the invention;
Fig. 3 is the circuit diagram of the described driving circuit of second embodiment of the invention;
Fig. 4 is the circuit diagram of the described driving circuit of third embodiment of the invention;
Fig. 4 A is the equivalent circuit diagram of the described driving circuit of third embodiment of the invention in pre-charging stage;
Fig. 4 B is the equivalent circuit diagram of the described driving circuit of third embodiment of the invention at discharge regime;
Fig. 4 C is that the described driving circuit of third embodiment of the invention is at the driving OLED equivalent circuit diagram in generating demonstration stage;
Fig. 5 is the signal of the first grid control line G1 output in the described driving circuit of third embodiment of the invention, the signal of second grid control line G2 output and the sequential chart of the data voltage Vdata that data line Data exports;
Fig. 6 is the circuit diagram of the described driving circuit of fourth embodiment of the invention;
Fig. 7 is the circuit diagram of the described driving circuit of fifth embodiment of the invention;
Fig. 8 is the circuit diagram of the described driving circuit of sixth embodiment of the invention;
Fig. 9 A is the equivalent circuit diagram of the described driving circuit of sixth embodiment of the invention in pre-charging stage;
Fig. 9 B is the equivalent circuit diagram of the described driving circuit of sixth embodiment of the invention at discharge regime;
Fig. 9 C is that the described driving circuit of sixth embodiment of the invention is at the driving OLED equivalent circuit diagram in generating demonstration stage;
Figure 10 is the signal of the first grid control line G1 output in the described driving circuit of sixth embodiment of the invention, the signal of second grid control line G2 output and the sequential chart of the data voltage Vdata that data line Data exports.
Embodiment
For making the object of the invention, technical scheme and advantage express clearlyer, the present invention is done further detailed explanation again below in conjunction with accompanying drawing and specific embodiment.
The invention provides a kind of driving circuit and OLED; Utilize diode (Diode Connection) and through the control store capacitor discharge so that the gate source voltage of drive thin film transistors compensation drives the threshold voltage of the drive thin film transistors of AMOLED, thereby the problem of the even brightness decay of solution OLED brightness disproportionation.
Introduce driving circuit of the present invention according to specific embodiment below.
Need to prove that in accompanying drawing of the present invention, if there is not specified otherwise, G represents grid, S represents source electrode, and D represents drain electrode.
As shown in Figure 2, the described driving circuit of first embodiment of the invention is used for driving OLED, and this driving circuit comprises drive thin film transistors DTFT, first on-off element 11, MM CAP Cs and driving control unit 21;
The grid of said drive thin film transistors DTFT is connected with first end of said MM CAP Cs, also is connected with the drain electrode of said drive thin film transistors through said driving control unit;
The source electrode of said drive thin film transistors DTFT is connected with the low level output terminal of data line Data and said driving power respectively through said driving control unit 21;
The drain electrode of said drive thin film transistors DTFT is connected with the negative electrode of OLED;
Second end of said MM CAP Cs also is connected with the drain electrode of said drive thin film transistors DTFT and the low level output terminal of driving power respectively through said driving control unit 21;
Said first on-off element 11 is series between the high level output terminal of anode and driving power of said OLED;
Said drive thin film transistors DTFT is a n type thin film transistor (TFT);
Said driving control unit 21; Be used for discharging and recharging through controlling said MM CAP Cs; Work in the saturation region and compensate Vth for the gate source voltage of said drive thin film transistors DTFT to control said drive thin film transistors DTFT through MM CAP; Wherein, Vth is the threshold voltage of said drive thin film transistors DTFT;
The output voltage of the high level output terminal of said driving power is VDD, and the output voltage of the low level output terminal of said driving power is VSS.
The described driving circuit of first embodiment of the invention is in when work,
In very first time section; It is pre-charging stage; Being connected between the anode of the said OLED of said first on-off element, 11 conductings and the high level output terminal of driving power; Being connected between the grid of the said drive thin film transistors DTFT of said driving control unit 21 conductings and the drain electrode, being connected between second end of the said MM CAP Cs of conducting and the low level output terminal of driving power, and being connected between the source electrode of the said drive thin film transistors DTFT of conducting and the data line Data; The data voltage Vdata input of data line Data output; Said MM CAP Cs is recharged, and the grid voltage of DTFT and drain voltage all are VDD, and DTFT is that a diode gets into state of saturation in fact;
In second time period; Be discharge regime, the data voltage Vdata of data line Data output is a high level, being connected between the anode that said first on-off element 11 breaks off said OLED and the high level output terminal of driving power; The drain electrode of said driving control unit 21 control disconnection drive thin film transistors DTFT is connected with the high level output terminal of said driving power; MM CAP Cs begins discharge through driving control unit 21, DTFT, is Vth up to the gate source voltage of DTFT, and Vth is the threshold voltage of said drive thin film transistors DTFT; At this moment, first end of said MM CAP Cs and the voltage difference between second end are Vdata+Vth;
In the 3rd time period; It is the driving OLED generating demonstration stage; The grid that said drive thin film transistors DTFT is broken off in 21 controls of said driving control unit with drain between be connected; Second end that breaks off said MM CAP Cs is connected with the low level output terminal of driving power; And being connected between the source electrode that breaks off said drive thin film transistors DTFT and the data line Data, being connected between the drain electrode of the said drive thin film transistors DTFT of control conducting and second end of said MM CAP Cs, and being connected between the low level output terminal of the source electrode of the said drive thin film transistors DTFT of conducting and driving power; At this moment; Second terminal voltage of MM CAP Cs is VDD; First terminal voltage of MM CAP Cs like this is that the grid voltage of drive thin film transistors DTFT will be undergone mutation; So that the voltage difference of MM CAP Cs is constant, first terminal voltage of MM CAP Cs becomes VDD+Vth+Vdata-Vth_oled, and the gate source voltage Vgs of said drive thin film transistors also is VDD+Vth+Vdata-Vth_oled.Wherein, Vth_oled is meant the threshold voltage of OLED.The electric current I that flow through drive thin film transistors DTFT this moment is:
I＝K(Vgs-Vth) 2
＝K(VDD+Vth+Vdata-Vth_oled-Vth) 2
＝K(VDD+Vdata-Vth_oled) 2
Wherein, K is the current coefficient of DTFT;
K = C ox · μ · W L ;
μ, C OX, W, L be respectively the field-effect mobility of DTFT, gate insulation layer unit-area capacitance, channel width, length;
So eliminate the influence of the Vth of drive thin film transistors DTFT, so just can improve the homogeneity of electric capacity, reached the even of brightness.
As shown in Figure 3, the circuit diagram of the described driving circuit of second embodiment of the invention.
The described driving circuit of second embodiment of the invention is based on the described driving circuit of first embodiment of the invention.In the described driving circuit of second embodiment of the invention, said driving control unit comprises second switch element 12, the 3rd on-off element 13, the 4th on-off element 14, the 5th on-off element 15 and the 6th on-off element 16;
Be connected with second switch element 12 between second end of said MM CAP Cs and the drain electrode of said drive thin film transistors DTFT;
Be connected with the 3rd on-off element 13 between the grid of said drive thin film transistors DTFT and the drain electrode;
Be connected with the 4th on-off element 14 between second end of said MM CAP Cs and the low level output terminal of said driving power;
Be connected with the 5th on-off element 15 between the source electrode of said drive thin film transistors DTFT and the said data line Data;
Be connected with the 6th on-off element 16 between the low level output terminal of the source electrode of said drive thin film transistors DTFT and said driving power.
As shown in Figure 4, the circuit diagram of the described driving circuit of third embodiment of the invention.
The described driving circuit of third embodiment of the invention is based on the described driving circuit of second embodiment of the invention.In the described driving circuit of third embodiment of the invention; Said first on-off element 11 is that label is the first film transistor of T1; Said second switch element 12 is that label is second thin film transistor (TFT) of T2; Said the 3rd on-off element 13 is that label is the 3rd thin film transistor (TFT) of T3; Said the 4th on-off element 14 is that label is the 4th thin film transistor (TFT) of T4, and said the 5th on-off element 15 is that label is the 5th thin film transistor (TFT) of T5, and said the 6th on-off element 16 is that label is the 6th thin film transistor (TFT) of T6;
Said drive thin film transistors DTFT, grid is connected with first end of said MM CAP Cs, and source electrode is connected with the drain electrode of said the 6th thin film transistor (TFT) T6, and drain electrode is connected with the negative electrode of said OLED;
Said the first film transistor T 1, grid is connected with first grid control line G1, and source electrode is connected with the anode of said OLED, and drain electrode is connected with the high level output terminal of driving power;
The said second thin film transistor (TFT) T2, grid is connected with second grid control line G2, and source electrode is connected with the source electrode of said the 4th thin film transistor (TFT) T4, and drain electrode is connected with the source electrode of said the 3rd thin film transistor (TFT) T3;
Said the 3rd thin film transistor (TFT) T3, grid is connected with second grid control line G2, and drain electrode is connected with the grid of said drive thin film transistors DTFT;
Said the 4th thin film transistor (TFT) T4, grid is connected grounded drain with second grid control line G2;
Said the 5th thin film transistor (TFT) T5, grid is connected with second grid control line G2, and source electrode is connected with data line Data, and drain electrode is connected with the source electrode of said drive thin film transistors DTFT;
Said the 6th thin film transistor (TFT) T6, grid is connected source ground with second grid control line G2;
Second end of said MM CAP Cs is connected with the source electrode of the said second thin film transistor (TFT) T2;
Said the first film transistor T 1, the said second thin film transistor (TFT) T2, said the 6th thin film transistor (TFT) T6 and said drive thin film transistors DTFT are n type thin film transistor (TFT), and said the 3rd thin film transistor (TFT) T3, said the 4th thin film transistor (TFT) T4 and said the 5th thin film transistor (TFT) T5 are p type thin film transistor (TFT);
The low level output terminal of said driving power is ground wire GND.
Shown in Fig. 4 A, during the described drive circuit works of third embodiment of the invention, in very first time section; Be pre-charging stage, said first grid control line G1 output high level, said second grid control line G2 output low level; The data voltage Vdata of data line Data output is a high level; At this moment, T2, T6 close, and T1, T3, T4, T5 all open; The anode of said OLED is connected with the high level output terminal of driving power, the grid of drive thin film transistors DTFT and drain electrode conducting, and the source electrode of drive thin film transistors DTFT is connected with data line Data, the second end ground connection of MM CAP Cs; The data voltage Vdata input of data line Data output, MM CAP Cs is recharged, and the grid voltage of DTFT and drain voltage all are VDD, and DTFT is that a diode gets into state of saturation in fact.
Shown in Fig. 4 B, during the described drive circuit works of third embodiment of the invention, in second time period; Be discharge regime, said first grid control line G1 output low level, said second grid control line G2 output low level; The data voltage Vdata of data line Data output is a high level, and T1 closes, and the anode disconnection of said OLED is connected with the high level output terminal of said driving power; MM CAP Cs begins discharge through T3, DTFT, is Vth up to the gate source voltage of DTFT, and Vth is the threshold voltage of said drive thin film transistors DTFT; At this moment, first end of said MM CAP Cs and the voltage difference between second end are Vdata+Vth.
Shown in Fig. 4 C; During the described drive circuit works of third embodiment of the invention, in the 3rd time period, i.e. driving OLED generating demonstration stage; Said first grid control line G1 output low level; Said second grid control line G2 output high level, T3, T4, T5 close, and T1, T2, T6 open; The anode of said OLED is connected with the high level output terminal of driving power; Second end of said MM CAP Cs breaks off with being connected of ground wire GND and the drain electrode conducting of said drive thin film transistors DTFT, and the drain electrode disconnection of drive thin film transistors DTFT is passed through OLED and is connected with the high level output terminal of said driving power with being connected of grid of drive thin film transistors DTFT, and the source electrode disconnection of drive thin film transistors DTFT was connected with ground wire GND with being connected of data line Data; At this moment; Second terminal voltage of MM CAP Cs is VDD; This moment, first terminal voltage of MM CAP Cs was that the grid voltage of drive thin film transistors DTFT will be undergone mutation; So that the voltage difference of MM CAP Cs is constant, first terminal voltage of MM CAP Cs becomes VDD+Vth+Vdata-Vth_oled, and the gate source voltage Vgs of said drive thin film transistors also is VDD+Vth+Vdata-Vth_oled.Wherein, Vth_oled is meant the threshold voltage of OLED.The electric current I that flow through drive thin film transistors DTFT this moment is:
I＝K(Vgs-Vth) 2
＝K(VDD+Vth+Vdata-Vth_oled-Vth) 2
＝K(VDD+Vdata-Vth_oled) 2
Wherein, K is the current coefficient of DTFT;
K = C ox · μ · W L ;
μ, C OX, W, L be respectively the field-effect mobility of DTFT, gate insulation layer unit-area capacitance, channel width, length;
So eliminate the influence of the Vth of drive thin film transistors DTFT, so just can improve the homogeneity of electric capacity, reached the even of brightness.
Fig. 5 is the signal of the first grid control line G1 output in the described driving circuit of third embodiment of the invention, the signal of said second grid control line G2 output and the sequential chart of the data voltage Vdata that data line Data exports.
As the embodiment that third embodiment of the invention can substitute, the first film transistor can also be the P type, the signal of its corresponding first grid control line G1 output also become with Fig. 5 now in G1 signal level signal inverting each other; The 5th thin film transistor (TFT) can also be the N type, and the 6th thin film transistor (TFT) can also be the P type, the signal of its corresponding second grid control line G2 output also become with Fig. 5 now in G2 signal level signal inverting each other, also can realize same function.
Among the embodiment that the present invention can substitute, thin film transistor (TFT) can also be by triode, and metal-oxide-semiconductor (MOSFET, Metal-Oxide-Semiconductor Field-Effect-Transistor) waits and replaces, and can realize identical functions.
The present invention also provides a kind of OLED, comprises OLED and like first embodiment of the invention, second embodiment or the described driving circuit of the 3rd embodiment;
First on-off element that said driving circuit comprises is connected with the anode of said OLED;
The drain electrode of the drive thin film transistors that said driving circuit comprises is connected with the negative electrode of said OLED;
Said OLED comprises the viewing area that a plurality of pixel cells are formed, and the corresponding pixel cell of each driving circuit is used for driving OLED.
As shown in Figure 6, the described driving circuit of fourth embodiment of the invention comprises drive thin film transistors DTFT, first on-off element 61, MM CAP Cs and driving control unit 62;
The grid of said drive thin film transistors DTFT is connected with first end of said MM CAP Cs, also is connected with the drain electrode of said drive thin film transistors DTFT through said driving control unit 62;
The source electrode of said drive thin film transistors DTFT is connected with the high level output terminal of data line Data and said driving power respectively through said driving control unit 62;
The drain electrode of said drive thin film transistors DTFT is connected with the anode of OLED through said first on-off element 61;
Second end of said MM CAP Cs is connected with the high level output terminal of said driving power and the low level output terminal of said driving power respectively through said driving control unit 62;
The negative electrode of said OLED is connected with the low level output terminal of driving power;
Said drive thin film transistors DTFT is a p type thin film transistor (TFT);
The output voltage of the high level output terminal of said driving power is VDD, and the output voltage of the low level output terminal of said driving power is VSS.
The described driving circuit of fourth embodiment of the invention is in when work,
In very first time section; Be pre-charging stage, said first grid control line G1 output high level, said second grid control line G2 output low level; The data voltage Vdata of data line Data output is a high level; At this moment, being connected between the drain electrode of the said drive thin film transistors DTFT of said first on-off element, 61 conductings and the anode of said OLED, the grid of the said drive thin film transistors DTFT of said driving control unit 62 control conductings with drain between be connected; Being connected between second end of the said MM CAP Cs of conducting and the high level output terminal of driving power, and being connected between the source electrode of the said drive thin film transistors DTFT of conducting and the data line Data; The data voltage Vdata input of data line Data output, MM CAP Cs is recharged, and the grid voltage of DTFT all is connected with ground wire GND with drain voltage, and DTFT is that a diode gets into state of saturation in fact;
In second time period, i.e. discharge regime, said first grid control line G1 output low level; Said second grid control line G2 output low level; The data voltage Vdata of data line Data output is a high level, and said first on-off element 61 breaks off the drain electrode of said drive thin film transistors DTFT and being connected of ground wire GND, and MM CAP Cs begins discharge through driving control unit 62, DTFT; Gate source voltage up to DTFT is Vth; Vth is the threshold voltage of said drive thin film transistors DTFT, and at this moment, second end and the voltage difference between first end of said MM CAP Cs are VDD-Vdata+Vth;
In the 3rd time period, promptly driving OLED is generated electricity the demonstration stage, said first grid control line G1 output low level, said second grid control line G2 output high level; The drain electrode of the said drive thin film transistors DTFT of said first on-off element, 61 conductings is connected with ground wire GND's; The grid that said drive thin film transistors DTFT is broken off in 62 controls of said driving control unit with drain between be connected; Being connected between second end that breaks off said MM CAP Cs and the high level output terminal of driving power; And being connected between the source electrode that breaks off said drive thin film transistors DTFT and the data line Data; Being connected between second end of control conducting said MM CAP Cs and the ground wire GND, and being connected between the high level output terminal of the source electrode of the said drive thin film transistors DTFT of conducting and driving power; At this moment; Second end of MM CAP Cs is the plus earth line GND of OLED; First terminal voltage of MM CAP Cs like this is that the grid voltage of drive thin film transistors DTFT will be undergone mutation; So that the voltage difference of MM CAP Cs is constant, first terminal voltage of MM CAP Cs becomes Vdata-Vth-VDD, and the gate source voltage Vgs of said drive thin film transistors is Vdata-VDD-Vth-Vth_oled.Wherein, Vth_oled is meant the threshold voltage of OLED.The electric current I that flow through drive thin film transistors DTFT this moment is:
I＝K(Vgs+Vth) 2
＝K(Vdata-VDD-Vth-Vth_oled+Vth) 2
＝K(Vdata-VDD-Vth_oled) 2
Wherein, K is the current coefficient of DTFT;
K = C ox · μ · W L ;
μ, C OX, W, L be respectively the field-effect mobility of DTFT, gate insulation layer unit-area capacitance, channel width, length;
So eliminate the influence of the Vth of drive thin film transistors DTFT, so just can improve the homogeneity of electric capacity, reached the even of brightness.
As shown in Figure 7, the circuit diagram of the described driving circuit of fifth embodiment of the invention.The described driving circuit of fifth embodiment of the invention is based on the described driving circuit of fourth embodiment of the invention.
In the described driving circuit of fifth embodiment of the invention, said driving control unit comprises second switch element 72, the 3rd on-off element 73, the 4th on-off element 74, the 5th on-off element 75 and the 6th on-off element 76, wherein,
Be connected with second switch element 72 between second end of said MM CAP Cs and the low level output terminal of driving power;
Be connected with the 3rd on-off element 73 between the grid of said drive thin film transistors DTFT and the drain electrode of said drive thin film transistors DTFT;
Be connected with the 4th on-off element 74 between second end of said MM CAP Cs and the high level output terminal of driving power;
Be connected with the 5th on-off element 75 between the source electrode of said drive thin film transistors DTFT and the said data line Data;
Be connected with the 6th on-off element 76 between the source electrode of said drive thin film transistors DTFT and the said power lead VDD.
As shown in Figure 8, the circuit diagram of the described driving circuit of sixth embodiment of the invention.The described driving circuit of sixth embodiment of the invention is based on the described driving circuit of fifth embodiment of the invention.
In the described driving circuit of sixth embodiment of the invention,
Said first on-off element 61 is that label is the first film transistor of T1; Said second switch element 72 is that label is second thin film transistor (TFT) of T2; Said the 3rd on-off element 73 is that label is the 3rd thin film transistor (TFT) of T3; Said the 4th on-off element 74 is that label is the 4th thin film transistor (TFT) of T4, and said the 5th on-off element 75 is that label is the 5th thin film transistor (TFT) of T5, and said the 6th on-off element 76 is that label is the 6th thin film transistor (TFT) of T6;
Said drive thin film transistors DTFT; Grid is connected with first end of said MM CAP Cs; Source electrode is connected with the drain electrode of said the 5th thin film transistor (TFT) T5 and the source electrode of said the 6th thin film transistor (TFT) T6 respectively, and drain electrode is connected with the drain electrode of said the first film transistor T 1;
Said the first film transistor T 1, grid is connected with first grid control line G1, and source electrode is connected with the anode of said OLED, and drain electrode is connected with the drain electrode of said the 3rd thin film transistor (TFT) T3;
The said second thin film transistor (TFT) T2, grid is connected with second grid control line G2, source ground, drain electrode is connected with second end of said MM CAP Cs;
Said the 3rd thin film transistor (TFT) T3, grid is connected with second grid control line G2, and source electrode is connected with the grid of said drive thin film transistors DTFT;
Said the 4th thin film transistor (TFT) T4, grid is connected with second grid control line G2, and source electrode is connected with the high level output terminal of driving power, and drain electrode is connected with second end of said MM CAP Cs;
Said the 5th thin film transistor (TFT) T5, grid is connected with second grid control line G2, and source electrode is connected with data line Data;
Said the 6th thin film transistor (TFT) T6, grid is connected with second grid control line G2, and drain electrode is connected with the high level output terminal of driving power;
Said the first film transistor T 1, the said second thin film transistor (TFT) T2 and said the 6th thin film transistor (TFT) T6 are n type thin film transistor (TFT), and said drive thin film transistors DTFT, said the 3rd thin film transistor (TFT) T3, said the 4th thin film transistor (TFT) T4 and said the 5th thin film transistor (TFT) T5 are p type thin film transistor (TFT);
The low level output terminal of said driving power is ground wire GND.
Shown in Fig. 9 A, during the described drive circuit works of sixth embodiment of the invention, in very first time section; Be pre-charging stage, said first grid control line G1 output high level, said second grid control line G2 output low level; The data voltage Vdata of data line Data output is a high level; At this moment, T2, T6 close, and T1, T3, T4, T5 all open; The drain electrode of said drive thin film transistors DTFT is connected with the anode of said OLED; The grid of drive thin film transistors DTFT and drain electrode conducting; Second end of said MM CAP Cs is connected with the high level output terminal of driving power, and the source electrode of drive thin film transistors DTFT is connected with data line Data; The data voltage Vdata input of data line Data output, MM CAP Cs is recharged, and the grid voltage of DTFT all is connected with ground wire GND with drain voltage, and DTFT is that a diode gets into state of saturation in fact.
Shown in Fig. 9 B, during the described drive circuit works of sixth embodiment of the invention, in second time period; Be discharge regime, said first grid control line G1 output low level, said second grid control line G2 output low level; The data voltage Vdata of data line Data output is a high level, and T1 closes, and the drain electrode disconnection of said drive thin film transistors DTFT is connected with the anode of said OLED; MM CAP Cs begins discharge through T3, DTFT, is Vth up to the gate source voltage of DTFT, and Vth is the threshold voltage of said drive thin film transistors DTFT; At this moment, second end of said MM CAP Cs and the voltage difference between first end are VDD-Vdata+Vth.
Shown in Fig. 9 C, during the described drive circuit works of sixth embodiment of the invention, in the 3rd time period; It is the driving OLED generating demonstration stage; Said first grid control line G1 output low level, said second grid control line G2 output high level, T3, T4, T5 close; T1, T2, T6 open; Second end of said MM CAP Cs breaks off with being connected of high level output terminal of said driving power and ground wire GND conducting, and the drain electrode disconnection of drive thin film transistors DTFT was connected with the anode of OLED with being connected of grid of drive thin film transistors DTFT, and the source electrode disconnection of drive thin film transistors DTFT was connected with power lead VDD with being connected of data line Data; At this moment; Second end of MM CAP Cs is the plus earth line GND of OLED; This moment, first terminal voltage of MM CAP Cs was that the grid voltage of drive thin film transistors DTFT will be undergone mutation; So that the voltage difference of MM CAP Cs is constant, first terminal voltage of MM CAP Cs becomes Vdata-Vth-VDD, and the gate source voltage Vgs of said drive thin film transistors is Vdata-VDD-Vth-Vth_oled.Wherein, Vth_oled is meant the threshold voltage of OLED.The electric current I that flow through drive thin film transistors DTFT this moment is:
I＝K(Vgs+Vth) 2
＝K(Vdata-VDD-Vth-Vth_oled+Vth) 2
＝K(Vdata-VDD-Vth_oled) 2
Wherein, K is the current coefficient of DTFT;
K = C ox · μ · W L ;
μ, C OX, W, L be respectively the field-effect mobility of DTFT, gate insulation layer unit-area capacitance, channel width, length;
So eliminate the influence of the Vth of drive thin film transistors DTFT, so just can improve the homogeneity of electric capacity, reached the even of brightness.
Figure 10 is the signal of the first grid control line G1 output in the described driving circuit of sixth embodiment of the invention, the signal of said second grid control line G2 output and the sequential chart of the signal Vdata that data line Data exports.
As the embodiment that sixth embodiment of the invention can substitute, the first film transistor can also be the P type, the signal of its corresponding first grid control line G1 output also become with Figure 10 now in G1 signal level signal inverting each other; Second thin film transistor (TFT) can also be the P type, and the 3rd thin film transistor (TFT) can also be the N type, the signal of its corresponding second grid control line G2 output also become with Figure 10 now in G2 signal level signal inverting each other, also can realize same function.
Among the embodiment that the present invention can substitute, thin film transistor (TFT) can also be by triode, and metal-oxide-semiconductor (MOSFET, Metal-Oxide-Semiconductor Field-Effect-Transistor) waits and replaces, and can realize identical functions.
The present invention also provides a kind of OLED, comprises OLED and fourth embodiment of the invention, the 5th embodiment or the described driving circuit of the 6th embodiment;
First on-off element that said driving circuit comprises is connected with the anode of said OLED;
The negative electrode of said OLED is connected with the low level output terminal of driving power;
Said OLED comprises the viewing area that a plurality of pixel cells are formed, and the corresponding pixel cell of each driving circuit is used for driving OLED.
Described driving circuit of first embodiment of the invention and the described driving circuit of fourth embodiment of the invention are based on an inventive concept; Its driving control unit; All be to be used for discharging and recharging, work in the saturation region and compensate Vth for the gate source voltage of said drive thin film transistors through MM CAP to control said drive thin film transistors through controlling said MM CAP.Difference is that the drive thin film transistors that the described driving circuit of this first embodiment comprises is a n type thin film transistor (TFT), and the drive thin film transistors that the described driving circuit of the 4th embodiment comprises is a p type thin film transistor (TFT).
Driving circuit of the present invention adopts the Vth of 7T1C circuit through compensation DTFT, so that the drive current I=K of DTFT * (Vgs-Vth) 2Or I=K (Vgs+Vth) 2Irrelevant with Vth, reach the electric current unanimity, improve homogeneity.
And driving circuit of the present invention has been owing to adopted OLED to go up luminous mode, compares that illumination mode has higher aperture opening ratio under the OLED, and the direct ground connection of source electrode of drive thin film transistors DTFT is that constant-current type connects method simultaneously.
More than explanation is just illustrative for the purpose of the present invention; And nonrestrictive, those of ordinary skills understand, under the situation of spirit that does not break away from accompanying claims and limited and scope; Can make many modifications, variation or equivalence, but all will fall in protection scope of the present invention.

Claims (8)

1. a driving circuit is characterized in that, comprises drive thin film transistors, first on-off element, MM CAP and driving control unit;
The grid of said drive thin film transistors is connected with first end of said MM CAP, also is connected with the drain electrode of said drive thin film transistors through said driving control unit;
The source electrode of said drive thin film transistors is connected with the low level output terminal of data line and said driving power respectively through said driving control unit;
The drain electrode of said drive thin film transistors is connected with the negative electrode of OLED;
Second end of said MM CAP also is connected with the drain electrode of said drive thin film transistors and the low level output terminal of driving power respectively through said driving control unit;
Said first on-off element is series between the high level output terminal of anode and driving power of said OLED;
Said drive thin film transistors is a n type thin film transistor (TFT);
Said driving control unit; Be used for discharging and recharging through controlling said MM CAP; Work in the saturation region and give the gate source voltage compensation Vth of said drive thin film transistors through MM CAP to control said drive thin film transistors, wherein, Vth is the threshold voltage of said drive thin film transistors.
2. driving circuit as claimed in claim 1 is characterized in that, said driving control unit comprises second switch element, the 3rd on-off element, the 4th on-off element, the 5th on-off element and the 6th on-off element;
Be connected with the second switch element between second end of said MM CAP and the drain electrode of said drive thin film transistors;
Be connected with the 3rd on-off element between the grid of said drive thin film transistors and the drain electrode;
Be connected with the 4th on-off element between second end of said MM CAP and the low level output terminal of said driving power;
Be connected with the 5th on-off element between the source electrode of said drive thin film transistors and the said data line;
Be connected with the 6th on-off element between the low level output terminal of the source electrode of said drive thin film transistors and said driving power.
3. driving circuit as claimed in claim 2 is characterized in that,
Said first on-off element is the first film transistor; Said second switch element is second thin film transistor (TFT); Said the 3rd on-off element is the 3rd thin film transistor (TFT); Said the 4th on-off element is the 4th thin film transistor (TFT), and said the 5th on-off element is the 5th thin film transistor (TFT), and said the 6th on-off element is the 6th thin film transistor (TFT);
Said drive thin film transistors, source electrode is connected with the drain electrode of said the 6th thin film transistor (TFT);
Said the first film transistor, grid is connected with the first grid control line, and source electrode is connected with the anode of said OLED, and drain electrode is connected with the high level output terminal of driving power;
Said second thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with the source electrode of said the 4th thin film transistor (TFT) and second end of said MM CAP respectively, and drain electrode is connected with the source electrode of said the 3rd thin film transistor (TFT);
Said the 3rd thin film transistor (TFT), grid is connected with the second grid control line, and drain electrode is connected with the grid of said drive thin film transistors;
Said the 4th thin film transistor (TFT), grid is connected grounded drain with the second grid control line;
Said the 5th thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with data line, and drain electrode is connected with the source electrode of said drive thin film transistors;
Said the 6th thin film transistor (TFT), grid is connected source ground with the second grid control line;
Said the first film transistor, said second thin film transistor (TFT) and said the 6th thin film transistor (TFT) are n type thin film transistor (TFT), and said the 3rd thin film transistor (TFT), said the 4th thin film transistor (TFT) and said the 5th thin film transistor (TFT) are p type thin film transistor (TFT).
4. OLED comprises OLED and like the described driving circuit of arbitrary claim in the claim 1 to 3.
5. a driving circuit is characterized in that, comprises drive thin film transistors, first on-off element, MM CAP and driving control unit;
The grid of said drive thin film transistors is connected with first end of said MM CAP, also is connected with the drain electrode of said drive thin film transistors through said driving control unit;
The source electrode of said drive thin film transistors is connected with the high level output terminal of data line and said driving power respectively through said driving control unit;
The drain electrode of said drive thin film transistors is connected with the anode of OLED through said first on-off element;
Second end of said MM CAP is connected with the high level output terminal of said driving power and the low level output terminal of said driving power respectively through said driving control unit;
The negative electrode of said OLED is connected with the low level output terminal of driving power;
Said driving control unit; Be used for discharging and recharging through controlling said MM CAP; Work in the saturation region and give the gate source voltage compensation Vth of said drive thin film transistors through MM CAP to control said drive thin film transistors, wherein, Vth is the threshold voltage of said drive thin film transistors;
Said drive thin film transistors is a p type thin film transistor (TFT).
6. driving circuit as claimed in claim 5 is characterized in that, said driving control unit comprises second switch element, the 3rd on-off element, the 4th on-off element, the 5th on-off element and the 6th on-off element, wherein,
Be connected with the second switch element between second end of said MM CAP and the ground wire;
Be connected with the 3rd on-off element between the grid of said drive thin film transistors and the drain electrode of said drive thin film transistors;
Be connected with the 4th on-off element between second end of said MM CAP and the high level output terminal of said driving power;
Be connected with the 5th on-off element between the source electrode of said drive thin film transistors and the said data line;
Be connected with the 6th on-off element between the high level output terminal of the source electrode of said drive thin film transistors and said driving power.
7. driving circuit as claimed in claim 6; It is characterized in that said first on-off element is the first film transistor, said second switch element is second thin film transistor (TFT); Said the 3rd on-off element is the 3rd thin film transistor (TFT); Said the 4th on-off element is the 4th thin film transistor (TFT), and said the 5th on-off element is the 5th thin film transistor (TFT), and said the 6th on-off element is the 6th thin film transistor (TFT);
The source electrode of said drive thin film transistors is connected with the drain electrode of said the 5th thin film transistor (TFT) and the source electrode of said the 6th thin film transistor (TFT) respectively, and drain electrode is connected with said the first film transistor drain;
Said the first film transistor, grid is connected with the first grid control line, and source electrode is connected with the anode of said OLED, and drain electrode is connected with the drain electrode of said the 3rd thin film transistor (TFT);
Said second thin film transistor (TFT), grid is connected with the second grid control line, source ground, drain electrode is connected with second end of said MM CAP;
Said the 3rd thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with the grid of said drive thin film transistors;
Said the 4th thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with the high level output terminal of driving power, and drain electrode is connected with second end of said MM CAP;
Said the 5th thin film transistor (TFT), grid is connected with the second grid control line, and source electrode is connected with data line;
Said the 6th thin film transistor (TFT), grid is connected with the second grid control line, and drain electrode is connected with the high level output terminal of driving power;
Said the first film transistor, said second thin film transistor (TFT) and said the 6th thin film transistor (TFT) are n type thin film transistor (TFT), and said the 3rd thin film transistor (TFT), said the 4th thin film transistor (TFT) and said the 5th thin film transistor (TFT) are p type thin film transistor (TFT).
8. an OLED is characterized in that, comprises OLED and like the described driving circuit of arbitrary claim in the claim 5 to 7.
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CN102368379A (en) * 2011-11-22 2012-03-07 深圳莱宝高科技股份有限公司 Pixel driving circuit of active matrix organic luminescent device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013143332A1 (en) * 2012-03-31 2013-10-03 京东方科技集团股份有限公司 Drive circuit and organic light-emitting display
WO2015149398A1 (en) * 2014-04-03 2015-10-08 深圳市华星光电技术有限公司 Array substrate of oled display
CN110544455A (en) * 2019-02-27 2019-12-06 友达光电股份有限公司 pixel circuit and driving method thereof

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