CN102707584B - Double-light-beam exposure system and method for manufacturing photonic crystal mask layer - Google Patents
Double-light-beam exposure system and method for manufacturing photonic crystal mask layer Download PDFInfo
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- CN102707584B CN102707584B CN201210202600.7A CN201210202600A CN102707584B CN 102707584 B CN102707584 B CN 102707584B CN 201210202600 A CN201210202600 A CN 201210202600A CN 102707584 B CN102707584 B CN 102707584B
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Abstract
The invention discloses a double-light-beam exposure system for manufacturing a photonic crystal mask layer. The double-light-beam exposure system comprises a laser light source, a beam expansion collimation system, a beam splitting and light gathering device and two rotary wafer clamps, wherein the beam splitting and light gathering device comprises a first beam splitting and light gathering prism, a second beam splitting and light gathering prism and two reflectors; the laser light source, the beam expansion collimation system and the first beam splitting and light gathering prism are sequentially arranged from front to back; the two reflectors are respectively positioned on the back and the side face of the first beam splitting and light gathering prism; positions where the first beam splitting and light gathering prism, the second beam splitting and light gathering prism and the two reflectors are positioned form a parallelogram; the two rotary wafer clamps are respectively positioned on the back and the side face of the second beam splitting and light gathering prism; and an electric shutter is arranged between the laser light source and the beam expansion collimation system or between the beam expansion collimation system and the first beam splitting and light gathering prism. The invention also discloses a double-light-beam exposure method for manufacturing the photonic crystal mask layer. The double-light-beam exposure system is simple in structure, low in cost and easy to implement.
Description
Technical field
The invention belongs to semiconductor and manufacture field of lithography, relate in particular to a kind of twin-beam exposure system and method that can be used for making photon crystal mask layer.
Background technology
Along with the raising of people's living standard, the enhancing of environmental consciousness, what domestic environment, leisure and comfort level were pursued improves constantly.Light fixture lamp decoration also turns to the situation of decorating and throwing light on and coexisting by simple illumination functions gradually, and the LED replacement conventional light source with illumination and decoration double dominant enters daily life becomes natural trend.
At present LED replaces conventional light source completely to enter the biggest problem that lighting field runs into is exactly brightness problem and heat dissipation problem, and these two problems are same problems in fact, and brightness has improved, and heat dissipation problem has just solved naturally.Under the prerequisite of the limited space that can improve at internal quantum efficiency (having approached 100%), the researcher of LED industry has turned to external quantum efficiency sight, multiple technologies scheme and the method for light extraction efficiency have been proposed to improve, such as patterned substrate technology, sidewall coarsening technique, DBR technology, optimize electrode structure, make 2 D photon crystal etc. on substrate or nesa coating.Wherein, the tool effect of patterned substrate, but be used to LED field as one of most important achievement in research in modern photonics field-photonic crystal, improving its brightness may tool development potentiality, because it can control crystalline network and the grating constant of photonic crystal, makes the crystalline network of itself and epitaxial crystal similar with grating constant, even identical, reduce Lattice Matching dislocation, reduce dislocation desity, reduce epitaxy defect; Moreover photonic crystal can also more effectively be controlled the behavior of light, and the direction of propagation and the spatial light intensity thereof that more on purpose change light distribute.So utilize in recent years and make the technical method that two dimensional crystal structure improves LED luminosity make oneself too remarkable on substrate or nesa coating, enjoy favor, emerge a large amount of patent documentations.
But, ripe not enough for method, device or the system of making photon crystal mask layer, otherwise production efficiency is low, production cost is higher, be difficult to realize and produce in enormous quantities; Function singleness, can only make one or two kind of photon crystal structure, if desired changes photon crystal structure, must update the equipment; It is exactly complicated structure.Seek for making simple in structure, cheap, the multi-functional exposure system of photon crystal mask layer, to promote that the work of LED industrialization process is imperative.
Therefore, how providing a kind of exposure system and method simple in structure, cheap, that can be used for of being easy to realize made photon crystal mask layer is those skilled in the art's technical matterss urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of the twin-beam exposure system and the method that can be used for making photon crystal mask layer simple in structure, cheap, that be easy to realization, by controlling the switch of electronic shutter and the angle of rotatable wafer holder, can realize the cycling of two wafer that are fixed in the rotatable wafer holder of correspondence being implemented exposure, being rotated, expose simultaneously, until complete the making of required photon crystal mask layer structure, there is the efficient advantage of production capacity.
To achieve the above object, the present invention adopts following technical scheme:
A kind of twin-beam exposure system that can be used for making photon crystal mask layer, comprise LASER Light Source, beam-expanding collimation system, beam splitting Multiplexing apparatus and two rotatable wafer holder, described beam splitting Multiplexing apparatus comprises the first beam splitting light-combining prism, the second beam splitting light-combining prism and two catoptrons, described LASER Light Source, beam-expanding collimation system and the first beam splitting light-combining prism set gradually from front to back, described two catoptrons lay respectively at described the first beam splitting light-combining prism below and side, first, the position at the second beam splitting light-combining prism and two catoptron places forms parallelogram, described two rotatable wafer holder lay respectively at the second beam splitting light-combining prism below and side, the laser that LASER Light Source is sent is after beam-expanding collimation system beam-expanding collimation, through the first beam splitting light-combining prism, be divided into two-beam, two-beam propagates into second beam splitting light-combining prism place respectively after corresponding catoptron reflection, after second beam splitting light-combining prism closes light, overlaps in two rotatable wafer holder.
Further, described the first beam splitting light-combining prism and the second beam splitting light-combining prism adopt respectively and by the beam splitting of two right-angle prism therebetween one decks, close block prism that light film is bonded or one and be coated with beam splitting and close any one in two kinds of forms of sheet glass of light film.
Further, described beam splitting is closed light film and can be realized reflection and transmission to light beam and carry out light splitting in the ratio of 1:1.
Further, the described twin-beam exposure system that can be used for making photon crystal mask layer also comprises two catoptron reclining apparatus that are respectively used to support and regulate corresponding catoptron, by accommodation reflex mirror reclining apparatus, can realize the 180 degree angle modulation up and down of corresponding catoptron.
Further, the described twin-beam exposure system that can be used for making photon crystal mask layer also comprises electronic shutter, described electronic shutter be arranged between described LASER Light Source and beam-expanding collimation system or be arranged at described beam-expanding collimation system and the first beam splitting light-combining prism between.
Further, the described twin-beam exposure system that can be used for making photon crystal mask layer also comprises variable optical attenuator, described variable optical attenuator is arranged between LASER Light Source and electronic shutter, or be arranged between electronic shutter and beam-expanding collimation system, or be arranged between beam-expanding collimation system and the first beam splitting light-combining prism.
Further, described variable optical attenuator can continuously change light intensity.
Further, described LASER Light Source is light source or visible laser or the invisible light laser instrument that solid state laser or gas laser or semiconductor laser or single laser instrument or the combination of a plurality of laser instrument form.
Further, described beam-expanding collimation system comprises and sets gradually from front to back beam expanding lens and collimating mirror.
Further, described beam expanding lens is aplanasia biconcave lens, and described collimating mirror is convex lens, and wherein, the front focus of the front focus of described convex lens and described aplanasia biconcave lens overlaps.
Further, described convex lens are lenticular or plano-convex lens.
Further, described catoptron is broadband deielectric-coating high reflection mirror, and visible ray and ultraviolet light are had to highly reflective.
Further, described rotatable wafer holder can be fixed wafer, and it is arbitrarily angled to carry wafer rotation.
The present invention also provides a kind of twin-beam exposure method that can be used for making photon crystal mask layer, comprises the steps:
LASER Light Source is sent light beam, and the light beam by this light beam after beam-expanding collimation carries out light splitting, forms two divided beams;
Two divided beams are merged to one or two overlapping region, and each overlapping region is respectively used to dress
The wafer being loaded in rotatable wafer holder exposes.
Further, in the light path before light splitting, be provided with for controlling the electronic shutter of light path opening and closing.
Further, the angle of each divided beams can be carried out 180 degree adjustment up and down.
Further, in the light path before light splitting, be also provided with for changing the variable optical attenuator of light beam light intensity.
Further, described variable optical attenuator can continuously change light intensity.
Provided by the invention for making twin-beam exposure system and the method for photon crystal mask layer, simple in structure, with low cost, be easy to realize, by controlling the angle of rotatable wafer holder, can realize simultaneously to being fixed on two wafer enforcement exposures, rotation, the cycling of exposure again in corresponding rotatable wafer holder, until complete the making of required photon crystal mask layer structure, there is the efficient feature of production capacity.In addition, by controlling the angle of two catoptrons, can make multiple photon crystal structure, have multi-functional advantage, the present invention, applicable to the LED chip manufacture of any size, meets the Sustainable Development Road of LED industry.
Generally speaking, a kind of twin-beam exposure system and method that can be used for making photon crystal mask layer provided by the invention has following beneficial effect:
One, simple in structure, cheap, be easy to realize;
Two, utilize the exposure of beam interference principle, without mask plate, there is higher cost advantage;
Three, by the switch of computer control electronic shutter, can realize two wafer are exposed simultaneously, there is the efficient advantage of production capacity;
Four, by controlling the angle of two catoptrons, can make multiple photon crystal mask layer, there is a kind of feature of equipment several functions, can be used for making various photon crystal structures;
Five, two catoptrons are broadband deielectric-coating high reflection mirror, can have high reflection to various wavelength, are convenient to selection and the replacing of LASER Light Source.
Six, production run environment friendly and pollution-free, meet energy-conservation demand of encircling of present stage, be convenient to commercially produce in enormous quantities.
Accompanying drawing explanation
Twin-beam exposure system and the method that can be used for making photon crystal mask layer of the present invention provided by following embodiment and accompanying drawing.
Fig. 1 is that one embodiment of the invention is for making the one-piece construction schematic diagram of the twin-beam exposure system of photon crystal mask layer.
Fig. 2 is the structural representation of the rotatable wafer holder in one embodiment of the invention.
Fig. 3 is the structural representation of the beam-expanding collimation system in one embodiment of the invention.
Fig. 4 is the structural representation of the beam splitting light-combining prism structure in one embodiment of the invention.
In figure: 1-LASER Light Source, 2-electronic shutter, 3-beam-expanding collimation system, 31-beam expanding lens, 32-collimating mirror, 4-beam splitting Multiplexing apparatus, 41-the first beam splitting light-combining prism, 42-the second beam splitting light-combining prism, 43-catoptron, the rotatable wafer holder of 5-, 6-variable optical attenuator, 7-right-angle prism, light film is closed in 8-beam splitting.
Embodiment
To twin-beam exposure system and the method that can be used for making photon crystal mask layer of the present invention be described in further detail below.
Below with reference to accompanying drawings the present invention is described in more detail, has wherein represented the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
For object of the present invention, feature are become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.It should be noted that, accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the object of the aid illustration embodiment of the present invention lucidly.
Refer to Fig. 1, Figure 1 shows that one embodiment of the invention is for making the one-piece construction schematic diagram of the twin-beam exposure system of photon crystal mask layer.The twin-beam exposure system that can be used for making photon crystal mask layer that the present embodiment provides, comprise LASER Light Source 1, electronic shutter 2, beam-expanding collimation system 3, beam splitting Multiplexing apparatus 4 and two rotatable wafer holder 5, described rotatable wafer holder 5 as shown in Figure 2, it can be fixed wafer, and it is arbitrarily angled to carry wafer rotation, described beam splitting Multiplexing apparatus 4 comprises the first beam splitting light-combining prism 41, the second beam splitting light-combining prism 42 and two catoptrons 43, described LASER Light Source 1, electronic shutter 2, beam-expanding collimation system 3 and the first beam splitting light-combining prism 41 set gradually from front to back, described two catoptrons lay respectively at described the first beam splitting light-combining prism 41 below and side, first, the second beam splitting light-combining prism 41, the position at 42 and two catoptron 43 places forms parallelogram, described two rotatable wafer holder 5 lay respectively at the second beam splitting light-combining prism 42 below and side, described electronic shutter 2 be arranged between described LASER Light Source 1 and beam-expanding collimation system 3 or be arranged at described beam-expanding collimation system 3 and the first beam splitting light-combining prism 41 between, in this enforcement, described electronic shutter 2 is arranged between described LASER Light Source 1 and beam-expanding collimation system 3, the laser that LASER Light Source 1 is sent is after beam-expanding collimation system 3 beam-expanding collimations, through the first beam splitting light-combining prism 41, be divided into two-beam, two-beam propagates into second beam splitting respectively and closes light rib 42 Jing Chu after 43 reflections of corresponding catoptron, overlaps in two rotatable wafer holder 5 after second beam splitting light-combining prism 42 closes light.By controlling the switch of electronic shutter 2 and the angle of rotatable wafer holder 5, can realize the cycling of two wafer that are fixed in the rotatable wafer holder 5 of correspondence being implemented exposure, being rotated, expose simultaneously, until complete the making of required photon crystal mask layer structure, there is the efficient feature of production capacity.
Preferably, the present embodiment can be used for making in the twin-beam exposure system of photon crystal mask layer, described LASER Light Source 1 can be light source or visible laser or the invisible light laser instrument that solid state laser or gas laser or semiconductor laser or single laser instrument or the combination of a plurality of laser instrument form.Visible, the Application Range of LASER Light Source 1 is quite extensive, goes for the making of various photon crystal mask layers.
Refer to Fig. 3, and incorporated by reference to Fig. 1, wherein, Fig. 3 is the structural representation of the beam-expanding collimation system 3 in one embodiment of the invention, as seen from Figure 3, described beam-expanding collimation system 3 comprises and sets gradually from front to back beam expanding lens 31 and collimating mirror 32.Preferably, described beam expanding lens 31 is aplanasia biconcave lenss, and described collimating mirror 32 is convex lens, and wherein, the front focus of the front focus of described convex lens and described aplanasia biconcave lens overlaps.Preferably, described convex lens can be biconvex lens or plano-convex lens.As shown in Figure 2, the laser beam that the beam-expanding collimation system 3 being comprised of beam expanding lens 31 and collimating mirror 32 can send LASER Light Source as shown in Figure 11 is amplified in proportion, and is transformed into the parallel beam that is applicable to follow-up each optical device size.
Please continue to refer to Fig. 1, preferably, the present embodiment can be used for make in the twin-beam exposure system of photon crystal mask layer, also comprise variable optical attenuator 6, described variable optical attenuator 6 is arranged between LASER Light Source 1 and electronic shutter 2.Certainly, described variable optical attenuator 6 also can be arranged between electronic shutter 2 and beam-expanding collimation system 3, or is arranged between beam-expanding collimation system 3 and the first beam splitting light-combining prism 41.The present embodiment can be used for making in the twin-beam exposure system of photon crystal mask layer, described variable optical attenuator 6 can continuously change light intensity.
Refer to Fig. 4, and incorporated by reference to Fig. 1, wherein, shown in Fig. 4, be the structural representation of the beam splitting light-combining prism structure 41 in one embodiment of the invention.The present embodiment can be used for making in the twin-beam exposure system of photon crystal mask layer, the first beam splitting light-combining prism 41 and the second beam splitting light-combining prism 42 adopt and by the 7 therebetween one deck beam splitting of two right-angle prisms, close block prism that light film 8 is bonded or one and be coated with beam splitting and close any one in two kinds of forms of sheet glass of light film.The present embodiment, first, second beam splitting light-combining prism 41,42 all adopts by the 7 therebetween one deck beam splitting of two right-angle prisms and closes cube beam splitting light-combining prism that light film 8 is bonded.Certainly, described first, second beam splitting light-combining prism 41,42 also can all adopt one to be coated with beam splitting and to close the sheet glass of light film (not shown).Or described the first beam splitting light-combining prism 41 adopts and closes by the 7 therebetween one deck beam splitting of two right-angle prisms cube beam splitting light-combining prism that light film 8 is bonded, and the second beam splitting light-combining prism 42 one of employing are coated with the sheet glass that light film is closed in beam splitting.Or described the second beam splitting light-combining prism 42 adopts and closes by the 7 therebetween one deck beam splitting of two right-angle prisms cube beam splitting light-combining prism that light film 8 is bonded, and the first beam splitting light-combining prism 41 one of employing are coated with the sheet glass that light film is closed in beam splitting.
Preferably, the present embodiment can be used for making in the twin-beam exposure system of photon crystal mask layer, described beam splitting is closed light film 8 and can be realized reflection and transmission to light beam and carry out light splitting in the ratio of 1:1.
Preferably, the present embodiment can be used for making in the twin-beam exposure system of photon crystal mask layer, described catoptron 43 is broadband deielectric-coating high reflection mirror, and visible ray and ultraviolet light are had to highly reflective, thereby is convenient to selection and the replacing of LASER Light Source 1.
Preferably, at the present embodiment, can be used for making in the twin-beam exposure system of photon crystal mask layer, also comprise two the catoptron reclining apparatus (not shown) that are respectively used to support and regulate corresponding catoptron 43, by accommodation reflex mirror reclining apparatus, can realize corresponding catoptron 43 180 degree angle modulation up and down.By controlling the angle of two catoptrons 43, can make multiple photon crystal mask layer, the wafer after overexposure, more just can form the mask layer of various photon crystal structures through developing process; The follow-up inductively coupled plasma etching (ICP etching, full name Inductively Coupled Plasma) of passing through again just can be transferred to photon crystal structure on substrate or nesa coating.Visible, the present invention has a kind of feature of equipment several functions, can be used for making various photon crystal structures.
Please continue to refer to Fig. 1, a kind of twin-beam exposure method that can be used for making photon crystal mask layer that the present embodiment provides, can adopt the above to can be used for making the twin-beam exposure system of photon crystal mask layer, also can adopt the exposure system of other versions, this twin-beam exposure method that can be used for making photon crystal mask layer comprises the steps:
LASER Light Source 1 is sent light beam, and the light beam by this light beam after beam-expanding collimation carries out light splitting, forms two divided beams;
Two divided beams are merged to one or two overlapping region, and the wafer that each overlapping region is respectively used to being loaded in rotatable wafer holder 5 exposes.
Preferably, in the present embodiment, in the light path before light splitting, be provided with for controlling the electronic shutter 2 of light path opening and closing.
Preferably, in the present embodiment, the angle of each divided beams can be carried out 180 degree up and down and be adjusted.By adjusting the angle of each divided beams, can make multiple photon crystal mask layer, the wafer after overexposure, more just can form the mask layer of various photon crystal structures through developing process; The follow-up inductively coupled plasma of process again etching just can be transferred to photon crystal structure on substrate or nesa coating.Visible, the present invention has a kind of feature of equipment several functions, can be used for making various photon crystal structures.
In the present embodiment, in the light path before light splitting, be also provided with for changing the variable optical attenuator 6 of light beam light intensity.Preferably, in the present embodiment, described variable optical attenuator 6 can continuously change light intensity.
In sum, provided by the invention for making twin-beam exposure system and the method for photon crystal mask layer, simple in structure, with low cost, be easy to realize, by controlling electronic shutter, can expose simultaneously and rotate exposure being carried on respectively two wafer of two rotatable wafer holder, there is the efficient feature of production capacity.In addition, by controlling the angle of two catoptrons, can make multiple photon crystal structure, have multi-functional advantage, this system, applicable to the LED chip manufacture of any size, meets the Sustainable Development Road of LED industry.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (18)
1. a twin-beam exposure system that can be used for making photon crystal mask layer, it is characterized in that, comprise LASER Light Source, beam-expanding collimation system, beam splitting Multiplexing apparatus and two rotatable wafer holder, described beam splitting Multiplexing apparatus comprises the first beam splitting light-combining prism, the second beam splitting light-combining prism and two catoptrons, described LASER Light Source, beam-expanding collimation system and the first beam splitting light-combining prism set gradually from front to back, described two catoptrons lay respectively at described the first beam splitting light-combining prism below and side, first, the position at the second beam splitting light-combining prism and two catoptron places forms parallelogram, described two rotatable wafer holder lay respectively at the second beam splitting light-combining prism below and side, the laser that LASER Light Source is sent is after beam-expanding collimation system beam-expanding collimation, through the first beam splitting light-combining prism, be divided into two-beam, two-beam propagates into second beam splitting light-combining prism place respectively after corresponding catoptron reflection, after second beam splitting light-combining prism closes light, overlaps in two rotatable wafer holder.
2. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 1, it is characterized in that, the first beam splitting light-combining prism and the second beam splitting light-combining prism adopt respectively and by the beam splitting of two right-angle prism therebetween one decks, close block prism that light film is bonded or one and be coated with beam splitting and close any one in two kinds of forms of sheet glass of light film.
3. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 2, is characterized in that, described beam splitting is closed light film and can be realized reflection and transmission to light beam and carry out light splitting in the ratio of 1:1.
4. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 1, it is characterized in that, also comprise two catoptron reclining apparatus that are respectively used to support and regulate corresponding catoptron, by accommodation reflex mirror reclining apparatus, can realize the 180 degree angle modulation up and down of corresponding catoptron.
5. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 1, it is characterized in that, comprise electronic shutter, described electronic shutter be arranged between described LASER Light Source and beam-expanding collimation system or be arranged at described beam-expanding collimation system and the first beam splitting light-combining prism between.
6. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 5, it is characterized in that, also comprise variable optical attenuator, described variable optical attenuator is arranged between LASER Light Source and electronic shutter, or be arranged between electronic shutter and beam-expanding collimation system, or be arranged between beam-expanding collimation system and the first beam splitting light-combining prism.
7. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 6, is characterized in that, described variable optical attenuator can continuously change light intensity.
8. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 1, it is characterized in that, described LASER Light Source is light source or visible laser or the invisible light laser instrument that solid state laser or gas laser or semiconductor laser or single laser instrument or the combination of a plurality of laser instrument form.
9. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 1, is characterized in that, described beam-expanding collimation system comprises and sets gradually from front to back beam expanding lens and collimating mirror.
10. the twin-beam exposure system that can be used for making photon crystal mask layer according to claim 9, it is characterized in that, described beam expanding lens is aplanasia biconcave lens, and described collimating mirror is convex lens, wherein, the front focus of the front focus of described convex lens and described aplanasia biconcave lens overlaps.
The 11. twin-beam exposure systems that can be used for making photon crystal mask layer according to claim 10, is characterized in that, described convex lens are lenticular or plano-convex lens.
The 12. twin-beam exposure systems that can be used for making photon crystal mask layer according to claim 1, is characterized in that, described catoptron is broadband deielectric-coating high reflection mirror, and visible ray and ultraviolet light are had to highly reflective.
The 13. twin-beam exposure systems that can be used for making photon crystal mask layer according to claim 1, is characterized in that, described rotatable wafer holder can be fixed wafer, and it is arbitrarily angled to carry wafer rotation.
The twin-beam exposure method that can be used for making photon crystal mask layer of 14. 1 kinds of employings twin-beam exposure system as described in claim 1-13 any one, is characterized in that, comprises the steps:
LASER Light Source is sent light beam, and the light beam by this light beam after beam-expanding collimation carries out light splitting, forms two divided beams;
Two divided beams are merged to one or two overlapping region, and the wafer that each overlapping region is respectively used to being loaded in rotatable wafer holder exposes.
The 15. twin-beam exposure methods that can be used for making photon crystal mask layer according to claim 14, is characterized in that, are provided with for controlling the electronic shutter of light path opening and closing in the light path before light splitting.
The 16. twin-beam exposure methods that can be used for making photon crystal mask layer according to claim 14, is characterized in that, the angle of each divided beams can be carried out 180 degree up and down and be adjusted.
The 17. twin-beam exposure methods that can be used for making photon crystal mask layer according to claim 14, is characterized in that, are also provided with for changing the variable optical attenuator of light beam light intensity in the light path before light splitting.
The 18. twin-beam exposure methods that can be used for making photon crystal mask layer according to claim 17, is characterized in that, described variable optical attenuator can continuously change light intensity.
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| CN107748444B (en) * | 2017-12-01 | 2020-07-24 | 中国科学院长春光学精密机械与物理研究所 | Polarized light wide-field transmission type convergent illumination device and method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6122037A (en) * | 1998-07-21 | 2000-09-19 | International Business Machines Corporation | Reflective phaseshift lithography system |
| CN1342269A (en) * | 1998-07-01 | 2002-03-27 | 康宁股份有限公司 | Apodization of optical filters formed in photosensitive media |
| JP2004103858A (en) * | 2002-09-10 | 2004-04-02 | Sony Corp | Aligner |
| CN1607463A (en) * | 2003-10-15 | 2005-04-20 | 中国科学院光电技术研究所 | Acoustooptic frequency modulation single exposure imaging interference photo-etching method and system thereof |
| CN1737612A (en) * | 2005-09-08 | 2006-02-22 | 上海交通大学 | Method for making grating strain floriation |
| CN101487978A (en) * | 2008-01-18 | 2009-07-22 | 中芯国际集成电路制造(上海)有限公司 | Exposure device and exposure method |
| CN101566793A (en) * | 2008-04-23 | 2009-10-28 | 中国科学院半导体研究所 | Double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystal |
| CN202771155U (en) * | 2012-06-15 | 2013-03-06 | 杭州士兰明芯科技有限公司 | Double-beam exposure system capable of being used for manufacturing photonic crystal mask layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1036048A1 (en) * | 2007-10-15 | 2009-04-16 | Asml Holding Nv | Pulse to pulse energy equalization or light beam intensity. |
-
2012
- 2012-06-15 CN CN201210202600.7A patent/CN102707584B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1342269A (en) * | 1998-07-01 | 2002-03-27 | 康宁股份有限公司 | Apodization of optical filters formed in photosensitive media |
| US6122037A (en) * | 1998-07-21 | 2000-09-19 | International Business Machines Corporation | Reflective phaseshift lithography system |
| JP2004103858A (en) * | 2002-09-10 | 2004-04-02 | Sony Corp | Aligner |
| CN1607463A (en) * | 2003-10-15 | 2005-04-20 | 中国科学院光电技术研究所 | Acoustooptic frequency modulation single exposure imaging interference photo-etching method and system thereof |
| CN1737612A (en) * | 2005-09-08 | 2006-02-22 | 上海交通大学 | Method for making grating strain floriation |
| CN101487978A (en) * | 2008-01-18 | 2009-07-22 | 中芯国际集成电路制造(上海)有限公司 | Exposure device and exposure method |
| CN101566793A (en) * | 2008-04-23 | 2009-10-28 | 中国科学院半导体研究所 | Double-beam holographic interference multiple exposure method for preparing two-dimensional photonic crystal |
| CN202771155U (en) * | 2012-06-15 | 2013-03-06 | 杭州士兰明芯科技有限公司 | Double-beam exposure system capable of being used for manufacturing photonic crystal mask layer |
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