CN102703988A - Method for opening band gap of graphene based on ion implantation technology - Google Patents
Method for opening band gap of graphene based on ion implantation technology Download PDFInfo
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- CN102703988A CN102703988A CN2012101747338A CN201210174733A CN102703988A CN 102703988 A CN102703988 A CN 102703988A CN 2012101747338 A CN2012101747338 A CN 2012101747338A CN 201210174733 A CN201210174733 A CN 201210174733A CN 102703988 A CN102703988 A CN 102703988A
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- ion beam
- ion implantation
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Abstract
The invention provides a method for opening a band gap of graphene based on an ion implantation technology. The method comprises the following steps of: 1) placing graphene on a Si slice, then placing in an ion implanter, and bombarding the graphene on the Si slice by using an ion beam to ensure that the defects are formed on the graphene; and 2) annealing the graphene which is bombarded by the ion beam to have the defects in the step 1) in an appropriate atmosphere. According to the method, the surface of the graphene is bombarded by the ion implantation technology to ensure that the defects (vacancies) are formed on the surface of the graphene, and then the graphene is annealed in the selected appropriate air atmosphere to finish N-type or P-type doping so as to open the band gap. The doping of the graphene is realized, and the switch characteristics are improved.
Description
Technical field
The present invention relates to a kind of method of opening the Graphene band gap, particularly relate to a kind of method of opening the Graphene band gap based on ion implantation technique.
Background technology
2004; Physics professor An Deliegaimu of Univ Manchester UK (Andre Geim) and Constantine Nuo Woxiaoluofu (Kostya Novoselov) successfully peel off graphite linings with the method (Micromechanical Cleavage) that a kind of very simple micromechanics is peeled off; And having observed the single crystalline layer graphite flake of freedom and stable existence, this sequential 2 D carbon material that can exist singly is called Graphene by scientists.Two people are also because obtain Nobel Prize in physics in 2010 in the pioneering research in Graphene field.Carrier mobility is up to 2x10 in the Graphene
5Cm
2V
-1, its mobility is higher than the silicon materials of large-scale application in the semicon industry far away, is considered to the replacer of silicon in the following nano electron device.Graphene is very extensive in the application in fields such as microelectronics, new forms of energy, infotech.
Yet, different with semiconductor silicon, there is not band gap between the valence band of Graphene itself and the conduction band, be zero band gap material, and band gap is the key of electrical application, because it can make material realize the Push And Release of stream of electrons.Therefore, if directly construct field-effect transistor (FET) device with Graphene, the gate effect is extremely limited, is difficult to realize switching characteristic.So need open the band gap of Graphene, make it be presented as semiconducting behavior.
One of method of opening band gap is Graphene to be processed into the faciola shape of " graphene nanobelt (GNR) " by name.Band gap can be opened or closure according to the shape of GNR section (edge).So far, the making of Graphene band all is through top-down method, goes out band shape or " cuing open " opened carbon nanotube as " cutting " from large stretch of graphene layer with laser.The Graphene band that these methods obtain is all than broad (surpassing 10nm), and edge roughness.For the high-level efficiency electron device, require the Graphene bandwidth much smaller than 10nm, and importantly the edge want level and smooth, with the deviation of ideal " prionodont ", all can seriously reduce the electric property of Graphene with the fraction of " chair form " edge shape.Also there are a lot of researchists and technician all paying close attention to the band gap that when double-layer graphite alkene applies voltage, forms.But the size of this band gap is merely more than the 100meV, and is little with thermal excitation energy difference.Therefore, discuss what state under utmost point low temperature environment for the present, at room temperature then can cause leakage current to increase, the current ratio during switch has only about 100.
Doping is considered to one of effective means of adjusting the Graphene electrical properties, but the intrinsic Graphene has perfect polynuclear plane, and thickness is too thin, is difficult to directly foreign atom stayed in the matrix as the injection of semi-conductor Si through impurity atoms.
Summary of the invention
The shortcoming of prior art in view of the above the object of the present invention is to provide a kind of method of can be under coldcondition opening the Graphene band gap based on ion implantation technique, realizes that the doping of N type and P type Graphene also improves its switching characteristic.
For realizing above-mentioned purpose and other relevant purposes, the present invention provides a kind of method of opening the Graphene band gap, and the basic ideas of this method are: with ion beam bombardment Graphene surface, some carbon atoms are fallen in bombardment, make the Graphene surface produce defective.Then at PH
3Perhaps B
2H
6Anneal etc. in the atmosphere, make P or B replace being banged the room of the carbon atom that falls, reach correction of the defect, adulterated purpose, thus the Graphene band gap is opened.
A kind of method of opening the Graphene band gap comprises the steps:
1) Graphene is placed on the Si sheet, puts into ion implanter then,, make it produce defective with the Graphene on the said Si sheet of ion beam bombardment;
2) with in suitable atmosphere, carrying out anneal through the defective Graphene behind the ion beam bombardment in the step 1).
Preferably, in the step 1), said ionic fluid is P
+
Preferably, in the step 1), the dosage of said ionic fluid is 2x10
14Ions/cm
2~ 2x10
16Ions/cm
2, energy is 80kev～120Kev.
Preferably, step 2) in, said suitable atmosphere is selected from PH
3Or B
2H
6
More preferably, said PH
3Or B
2H
6Flow be 100 ~ 300sccm.
Preferably, step 2) in, the temperature of said anneal is 800 ℃ ~ 1000 ℃.
As stated; A kind of method of opening the Graphene band gap based on ion implantation technique provided by the present invention; At first, make its surface produce defective (room), be chosen in then in the suitable gas atmosphere and anneal with ion implantation technique bombardment Graphene surface; Accomplish N type or P type and mix, thereby open band gap.Method of the present invention has realized the N type or the doping of P type of (800 ℃ ~ 1000 ℃) Graphene under coldcondition and has improved its switching characteristic, has expanded the range of application of Graphene in semiconducter device.
Description of drawings
Fig. 1 is shown as the process flow diagram of opening the method for Graphene band gap of the present invention.
The element numbers explanation
S1 utilizes ion implantation technique to carry out ion bombardment
S2 anneals in suitable gas atmosphere
The Graphene of A structural integrity
The defective Graphene of B
C realizes adulterated Graphene
1 is banged the room of the carbon atom generation of falling
2 foreign atoms
Embodiment
Below through specific specific examples embodiment of the present invention is described, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification sheets disclosed.The present invention can also implement or use through other different embodiment, and each item details in this specification sheets also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
Present embodiment provides a kind of method of opening the Graphene band gap and obtaining the atom doped Graphene of P, and this method is at first adopting P with ion implantation technique
+The ion beam bombardment Graphene bangs some carbon atoms, makes the Graphene surface produce vacancy defect; Then, again at PH
3Carry out The high temperature anneal in the atmosphere, make the P atom replace being banged the room of the carbon atom that falls, reach correction of the defect, realize adulterated purpose.Concrete steps are following:
Step 1: peel off the Graphene of individual layer with the mechanically peel method, it is positioned on the Si sheet, put into ion implanter then, use dosage to be 2x10
15Ions/cm
2, energy is the P of 100Kev
+Graphene on the said Si sheet of ion beam bombardment makes the Graphene surface produce vacancy defect;
Step 2: the defective Graphene that will pass through behind the ion beam bombardment is put into the tube furnace anneal, and concrete steps are: extract the air in the tube furnace with mechanical pump, and then feed PH
3Gas, the amount of feeding are 200sccm.Rise to 850 ℃ from room temperature, behind the insulation 10min, be cooled to room temperature.
Adopt XPS and AES to detect at PH
3Annealed Graphene sample behind ion beam bombardment in the atmosphere.The result shows, at PH
3The P signal is arranged in the annealed sample.Presentation of results behind ion beam bombardment Graphene through at PH
3Middle annealing has realized that the N type mixes.
Present embodiment provides a kind of method of opening the Graphene band gap and obtaining the atom doped Graphene of B, and this method is at first adopting P with ion implantation technique
+The ion beam bombardment Graphene bangs some carbon atoms, makes the Graphene surface produce vacancy defect; Then, again at B
2H
6Carry out The high temperature anneal in the atmosphere, make the B atom replace being banged the room of the carbon atom that falls, reach correction of the defect, realize adulterated purpose.Concrete steps are following:
Step 1: peel off the Graphene of individual layer with the mechanically peel method, it is positioned on the Si sheet, put into ion implanter then, use dosage to be 2x10
15Ions/cm
2, energy is the P of 100Kev
+Graphene on the said Si sheet of ion beam bombardment makes the Graphene surface produce vacancy defect;
Step 2: the defective Graphene that will pass through behind the ion beam bombardment is put into the tube furnace anneal, and concrete steps are: extract the air in the tube furnace with mechanical pump, and then feed B
2H
6Gas, the amount of feeding are 200sccm.Rise to 800 ℃ from room temperature, behind the insulation 10min, be cooled to room temperature.
Adopt XPS and AES to detect at B
2H
6Annealed Graphene sample behind ion beam bombardment in the atmosphere.The result shows, at B
2H
6The B signal is arranged in the annealed sample.Presentation of results behind ion beam bombardment Graphene through at B
2H
6Middle annealing has realized that the P type mixes.
Embodiment 3
Present embodiment provides a kind of method of opening the Graphene band gap and obtaining the atom doped Graphene of P, and this method is at first adopting P with ion implantation technique
+The ion beam bombardment Graphene bangs some carbon atoms, makes the Graphene surface produce vacancy defect; Then, again at PH
3Carry out The high temperature anneal in the atmosphere, make the P atom replace being banged the room of the carbon atom that falls, reach correction of the defect, realize adulterated purpose.Concrete steps are following:
Step 1: peel off the Graphene of individual layer with the mechanically peel method, it is positioned on the Si sheet, put into ion implanter then, use dosage to be 2x10
14Ions/cm
2, energy is the P of 120Kev
+Graphene on the said Si sheet of ion beam bombardment makes the Graphene surface produce vacancy defect;
Step 2: the defective Graphene that will pass through behind the ion beam bombardment is put into the tube furnace anneal, and concrete steps are: extract the air in the tube furnace with mechanical pump, and then feed PH
3Gas, the amount of feeding are 100sccm.Rise to 800 ℃ from room temperature, behind the insulation 10min, be cooled to room temperature.
Adopt XPS and AES to detect at PH
3Annealed Graphene sample behind ion beam bombardment in the atmosphere.The result shows, at PH
3The P signal is arranged in the annealed sample.Presentation of results behind ion beam bombardment Graphene through at PH
3Middle annealing has realized that the N type mixes.
Embodiment 4
Present embodiment provides a kind of method of opening the Graphene band gap and obtaining the atom doped Graphene of B, and this method is at first adopting P with ion implantation technique
+The ion beam bombardment Graphene bangs some carbon atoms, makes the Graphene surface produce vacancy defect; Then, again at B
2H
6Carry out The high temperature anneal in the atmosphere, make the B atom replace being banged the room of the carbon atom that falls, reach correction of the defect, realize adulterated purpose.Concrete steps are following:
Step 1: peel off the Graphene of individual layer with the mechanically peel method, it is positioned on the Si sheet, put into ion implanter then, use dosage to be 2x10
16Ions/cm
2, energy is the P of 80Kev
+Graphene on the said Si sheet of ion beam bombardment makes the Graphene surface produce vacancy defect;
Step 2: the defective Graphene that will pass through behind the ion beam bombardment is put into the tube furnace anneal, and concrete steps are: extract the air in the tube furnace with mechanical pump, and then feed B
2H
6Gas, the amount of feeding are 300sccm.Rise to 1000 ℃ from room temperature, behind the insulation 10min, be cooled to room temperature.
Adopt XPS and AES to detect at B
2H
6Annealed Graphene sample behind ion beam bombardment in the atmosphere.The result shows, at B
2H
6The B signal is arranged in the annealed sample.Presentation of results behind ion beam bombardment Graphene through at B
2H
6Middle annealing has realized that the P type mixes.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (6)
1. a method of opening the Graphene band gap comprises the steps:
1) Graphene is placed on the Si sheet, puts into ion implanter then,, make it produce defective with the Graphene on the said Si sheet of ion beam bombardment;
2) with in suitable atmosphere, carrying out anneal through the defective Graphene behind the ion beam bombardment in the step 1).
2. the method for opening the Graphene band gap according to claim 1 is characterized in that: in the step 1), said ionic fluid is P
+
3. the method for opening the Graphene band gap according to claim 1 is characterized in that: the dosage of said ionic fluid is 2x10
14Ions/cm
2~ 2x10
16Ions/cm
2, energy is 80kev～120Kev.
4. the method for opening the Graphene band gap according to claim 1 is characterized in that: step 2) in, said suitable atmosphere is selected from PH
3Or B
2H
6
5. the method for opening the Graphene band gap according to claim 4 is characterized in that: said PH
3Or B
2H
6Flow be 100 ~ 300sccm.
6. according to arbitrary described method of opening the Graphene band gap among the claim 1-5, it is characterized in that: step 2) in, the temperature of said anneal is 800 ℃ ~ 1000 ℃.
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|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088350A (en) * | 2015-08-17 | 2015-11-25 | 山东建筑大学 | Method for regulating electronic band gap in SiC-based epitaxial graphene |
| CN106276873A (en) * | 2016-08-08 | 2017-01-04 | 中国科学院上海微系统与信息技术研究所 | A kind of method preparing germanio grapheme nano-pore |
| CN103996616B (en) * | 2014-05-04 | 2017-09-26 | 江苏大学 | It is a kind of to pass through method of the Ga Ions Bombardments to graphene doping vario-property |
| CN108364856A (en) * | 2018-02-27 | 2018-08-03 | 北京大学 | A kind of method that ion implanting prepares nitrogen-doped graphene |
| CN115568261A (en) * | 2022-12-02 | 2023-01-03 | 中国科学技术大学 | Method for opening band gap of double-layer graphene and prepared double-layer graphene device |
-
2012
- 2012-05-31 CN CN2012101747338A patent/CN102703988A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| BEIDOU GUO 等: "Controllable N-Doping of Graphene", 《NANO LETT.》 * |
| 郭北斗: "N 掺杂石墨烯及其场效应晶体管研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996616B (en) * | 2014-05-04 | 2017-09-26 | 江苏大学 | It is a kind of to pass through method of the Ga Ions Bombardments to graphene doping vario-property |
| CN105088350A (en) * | 2015-08-17 | 2015-11-25 | 山东建筑大学 | Method for regulating electronic band gap in SiC-based epitaxial graphene |
| CN106276873A (en) * | 2016-08-08 | 2017-01-04 | 中国科学院上海微系统与信息技术研究所 | A kind of method preparing germanio grapheme nano-pore |
| CN106276873B (en) * | 2016-08-08 | 2019-01-25 | 中国科学院上海微系统与信息技术研究所 | A method of preparing germanium base grapheme nano-pore |
| CN108364856A (en) * | 2018-02-27 | 2018-08-03 | 北京大学 | A kind of method that ion implanting prepares nitrogen-doped graphene |
| CN115568261A (en) * | 2022-12-02 | 2023-01-03 | 中国科学技术大学 | Method for opening band gap of double-layer graphene and prepared double-layer graphene device |
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Application publication date: 20121003 |