CN102701207A - Method for preparing Al-doped silicon carbide nanowires - Google Patents
Method for preparing Al-doped silicon carbide nanowires Download PDFInfo
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Abstract
The invention relates to a method for preparing Al-doped silicon carbide nanowires. The method is technically characterized by comprising the step of synthesizing a great quantity of Al-doped SiC nanowires on the surface of silicon-based ceramics by taking reaction-sintered silicon-based ceramics and graphite powder as precursors under the condition of no catalyst. With the method, a great quantity of high-purity Al-doped SiC nanowires is prepared at low cost and high efficiency. In addition, the shape and the dimension of the synthesized Al-doped SiC nanowires can be effectively controlled by regulating the preparation temperature. The synthesized nanowires mainly comprise a great quantity of diameter-variable 6H-SIC nanowires. The diameters of centerlines or center rods of the nanowires are distributed within the range of 50-100 nm, the diameters of node structures on the centerlines or center rods are distributed within the range of 150-300 nm, and the nanowires are all constituted by four elements including Si, C, Al and O. The lengths of the nanowires are controllable, and the longest nanowire can reach the magnitude order of millimeter.
Description
Technical field
The present invention relates to the method for the adulterated silicon carbide nanometer line of a kind of Al of preparation.
Background technology
The SiC of broad stopband (E>2.3eV) is a kind of semiconductor material with wide forbidden band of indirect band gap; Have remarkable advantages such as energy gap is big, thermal conductivity is high, critical breakdown electric field is big, the electronics saturation drift velocity is fast, specific inductivity is little, capability of resistance to radiation is strong, chemicalstability is good, huge using value is arranged in the photoelectron material field.Along with the rise of nanosecond science and technology, character Yin Weidu such as the optics of low-dimensional materials, electricity, mechanics and magnetics show the character different with block materials with dimensional effect.The SiC nano wire has huge using value as a kind of one dimension semiconductor nano material in the photoelectron material field, has caused domestic and international researcher's extensive concern.Doping is a kind of important means that improves indirect band gap carrying semiconductor material luminous efficiency.But at present domestic and international investigator reports less about the preparation method of adulterated SiC nano wire.
Document 1: " Controlled Al-Doped Single-Crystalline 6H-SiC Nanowires.Crysral Growth and Design, 5 (2008): 1461～1464 " have been introduced a kind of polyureas silane and aluminum isopropylate of utilizing and have been raw material, with FeCl
2Be catalyzer, adopt the polymkeric substance pyrogenic silica to prepare the adulterated SiC nano wire of Al.This method can realize the control of Al doping content in the SiC nano wire through the content of control aluminum isopropylate.But the used polymeric preceramic body (polyureas silane and aluminum isopropylate) of this method costs an arm and a leg and the introducing of catalyzer makes the product of preparation impure, to a great extent limit the widespread use of this material.
Summary of the invention
The technical problem that solves
For fear of the weak point of prior art, the present invention proposes the method for the adulterated silicon carbide nanometer line of a kind of Al of preparation, solves problems such as the preparation cost product high and preparation of Al doped SIC nano wire in the present technology is impure.
Technical scheme
A kind of method for preparing the adulterated silicon carbide nanometer line of Al is characterized in that step is following:
Step 1: with mass percent is 70～85% Si powder, 5～15% SiC powder, 7～15% C powder and 3～10% Al
2O
3Powder places the rosin ball grinder, carries out ball mill mixing and handles 2～4h, obtains blended embedding powder;
Step 2: the semi-homogeneous of embedding powder of preparation is paved with the plumbago crucible bottom, puts into the C/C matrix material again, put into 1/4 embedding powder again the C/C matrix material is covered; After need passing through sanding and polishing, cleans in said C/C matrix material, and oven dry;
Step 3: plumbago crucible is put into the vertical vacuum furnace that graphite is heating element, vacuum oven is carried out vacuum-treat after, logical Ar gas rises to 2000～2200 ° Cs with furnace temperature from room temperature with 5～10 ° of C/min heat-up rates to normal pressure, insulation 1～3h; Powered-down naturally cools to room temperature subsequently, the C/C matrix material that has the silicon based ceramic coating that obtains; Logical argon shield in the whole process;
Step 4: in the plumbago crucible bottom, a branch of 3k thomel binding of the C/C composite material by adopting that has the silicon based ceramic coating that again step 3 is obtained is suspended on the Graphite Powder 99 top in the crucible then with the even bedding of Graphite Powder 99;
Step 5: plumbago crucible is put into the vertical vacuum furnace that graphite is heating element, vacuum oven is carried out vacuum-treat after, logical Ar rises to 1600～1800 ° Cs with furnace temperature from room temperature with 5～10 ° of C/min heat-up rates to normal pressure, insulation 1～3h; Powered-down naturally cools to room temperature subsequently; Logical Ar protection in the whole process;
Step 6: take out plumbago crucible subsequently, clear up the surface and contain the thomel on the C/C matrix material of silicon based ceramic coating, obtain the Al doped SIC nano wire on surface.
Vacuum-treat in said step 3 and the step 5 is: vacuumize and make vacuum tightness reach-0.09MPa, more than the empty 30min of fidelity, proof system seals intact end when the vacuum tightness no change then.
The purity of said Si powder is 99.5%, granularity is 300 orders.
The purity of said C powder is 99%, granularity is 320 orders.
The purity of said SiC powder is 98.5%, granularity is 300 orders.
Said Al
2O
3The purity of powder is that analytical pure, granularity are 100～200 orders.
The purity of said Graphite Powder 99 is 98%, granularity is 400 orders.
Beneficial effect
A kind of method for preparing the adulterated silicon carbide nanometer line of Al that the present invention proposes, silicon based ceramic and Graphite Powder 99 with reaction sintering under the condition of catalyst-free are that presoma is at the surperficial a large amount of synthetic Al doped SIC nano wires of silicon based ceramic.This method can prepare the adulterated SiC nano wire of a large amount of high-purity Al low-cost, efficiently.
Beneficial effect of the present invention: this method production cost is low, preparation cycle short, and the productive rate of the synthetic adulterated SiC nano wire of Al and purity are high; In addition, can effectively control the pattern and the size of the synthetic adulterated SiC nano wire of Al through the adjustment preparation temperature.The synthetic nano wire mainly is made up of the 6H-SiC nano wire of a large amount of vary in diameter.The medullary ray of nano wire or the diameter Distribution of centibar are in 50～100nm scope, and the diameter Distribution of node structure and all is elementary composition by four kinds of Si, C, Al, O etc. in 150～300nm scope on medullary ray or the centibar.Their length controlled, length can reach the millimeter magnitude.
Description of drawings
Fig. 1 is the XRD figure spectrum of the prepared Al doped silicon carbide nano SiC of inventive embodiments 2;
Fig. 2 is the SEM photo of the prepared Al doped silicon carbide nano belt of inventive embodiments 2;
Fig. 3 is the TEM photo of the prepared Al doped silicon carbide nano belt of inventive embodiments 2;
Fig. 4 and Fig. 3 inventive embodiments 2 corresponding EDX collection of illustrative plates.
Embodiment
Combine embodiment, accompanying drawing that the present invention is further described at present:
Embodiment 1:
The sand paper that the C/C matrix material is used No. 400, No. 800 and No. 1000 respectively is clean with absolute ethanol washing behind the sanding and polishing successively, dry for standby in baking oven.
Take by weighing the Si powder of 75g respectively, the SiC powder of 15g, the C powder of 15g, the Al of 10g
2O
3Powder.Place the rosin ball grinder, get the agate ball of different quantities different diameter and put into ball grinder, on planetary ball mill, carry out ball mill mixing and handle 2h, obtain the embedding powder.
Half of embedding powder put into plumbago crucible; Put into the C/C matrix material for preparing, put into half the embedding powder again, the slight crucible that rocks; Make powder embedding C/C matrix material equably, then plumbago crucible is put into the vertical vacuum furnace of graphite as heating element.After vacuumizing 30min vacuum tightness is reached-0.09MPa, the empty 30min of fidelity observes vacuum meter and indicates whether to change, and like no change, the illustrative system sealing is intact.Logical Ar gas is to normal pressure.This process triplicate.Afterwards furnace temperature is risen to 2200 ° of C, temperature rise rate is 10 ° of C/min, is incubated 1h then.Powered-down naturally cools to room temperature subsequently, logical Ar protection in the whole process.Take out crucible subsequently, the cleaning powder obtains the C/C matrix material that the silicon based ceramic coating is contained on the surface.
The Graphite Powder 99 that takes by weighing 10g is put into plumbago crucible; Make it evenly be laid in crucible bottom; To obtain the surface again and contain the top that is suspended on the powder surface after the C/C matrix material of silicon based ceramic coating bundlees with a branch of 3K thomel, then plumbago crucible put into the vacuum reaction stove.After vacuumizing 30min vacuum tightness is reached-0.09MPa, the empty 30min of fidelity observes vacuum meter and indicates whether to change, and like no change, the illustrative system sealing is intact.Logical argon gas is to normal pressure.This process triplicate.Afterwards furnace temperature is risen to 1600 ° of C, temperature rise rate is 5 ° of C/min, is incubated 3h then.Powered-down naturally cools to room temperature subsequently, logical argon shield in the whole process.Take out plumbago crucible subsequently, clear up the surface and contain the thomel on the C/C matrix material of silicon based ceramic coating, obtain a large amount of Al doped SIC nano wire in surface.
Embodiment 2:
The sand paper that the C/C matrix material is used No. 400, No. 800 and No. 1000 respectively is clean with absolute ethanol washing behind the sanding and polishing successively, dry for standby in baking oven.
Take by weighing the Si powder of 78g respectively, the SiC powder of 10g, the C powder of 11g, the Al of 6g
2O
3Powder.Place the rosin ball grinder, get the agate ball of different quantities different diameter and put into ball grinder, on planetary ball mill, carry out ball mill mixing and handle 3h, obtain the embedding powder.
Half of embedding powder put into plumbago crucible; Put into the C/C matrix material for preparing, put into half the embedding powder again, the slight crucible that rocks; Make powder embedding C/C matrix material equably, then plumbago crucible is put into the vertical vacuum furnace of graphite as heating element.After vacuumizing 30min vacuum tightness is reached-0.09MPa, the empty 30min of fidelity observes vacuum meter and indicates whether to change, and like no change, the illustrative system sealing is intact.Logical Ar gas is to normal pressure.This process triplicate.Afterwards furnace temperature is risen to 2100 ° of C, temperature rise rate is 7 ° of C/min, is incubated 2h then.Powered-down naturally cools to room temperature subsequently, logical Ar protection in the whole process.Take out crucible subsequently, the cleaning powder obtains the C/C matrix material that the silicon based ceramic coating is contained on the surface.
The Graphite Powder 99 that takes by weighing 15g is put into plumbago crucible; Make it evenly be laid in crucible bottom; To obtain the surface again and contain the top that is suspended on the powder surface after the C/C matrix material of silicon based ceramic coating bundlees with a branch of 3K thomel, then plumbago crucible put into the vacuum reaction stove.After vacuumizing 30min vacuum tightness is reached-0.09MPa, the empty 30min of fidelity observes vacuum meter and indicates whether to change, and like no change, the illustrative system sealing is intact.Logical argon gas is to normal pressure.This process triplicate.Afterwards furnace temperature is risen to 1700 ° of C, temperature rise rate is 7 ° of C/min, is incubated 2h then.Powered-down naturally cools to room temperature subsequently, logical argon shield in the whole process.Take out plumbago crucible subsequently, clear up the surface and contain the thomel on the C/C matrix material of silicon based ceramic coating, obtain a large amount of Al doped SIC nano wire in surface.Visible by Fig. 1, the synthetic nano wire mainly is made up of the 6H-SiC nano wire.Visible by Fig. 2, synthetic SiC nano wire is that the nano wire by a large amount of vary in diameter constitutes.The medullary ray of nano wire or the diameter Distribution of centibar are in 50～100nm scope, and the diameter Distribution of node structure is in 150～300nm scope on medullary ray or the centibar.Visible by Fig. 3, the nano wire of preparation is a solid construction, and its medullary ray or centibar and top node structure thereof all are elementary composition by four kinds of Si, C, Al, O etc.
Embodiment 3:
The sand paper that the C/C matrix material is used No. 400, No. 800 and No. 1000 respectively is clean with absolute ethanol washing behind the sanding and polishing successively, dry for standby in baking oven.
Take by weighing the Si powder of 85g respectively, the SiC powder of 5g, the C powder of 7g, the Al of 3g
2O
3Powder.。Place the rosin ball grinder, get the agate ball of different quantities different diameter and put into ball grinder, on planetary ball mill, carry out ball mill mixing and handle 4h, obtain the embedding powder.
Half of embedding powder put into plumbago crucible; Put into the C/C matrix material for preparing, put into half the embedding powder again, the slight crucible that rocks; Make powder embedding C/C matrix material equably, then plumbago crucible is put into the vertical vacuum furnace of graphite as heating element.After vacuumizing 30min vacuum tightness is reached-0.09MPa, the empty 30min of fidelity observes vacuum meter and indicates whether to change, and like no change, the illustrative system sealing is intact.Logical Ar gas is to normal pressure.This process triplicate.Afterwards furnace temperature is risen to 2000 ° of C, temperature rise rate is 5 ° of C/min, is incubated 3h then.Powered-down naturally cools to room temperature subsequently, logical Ar protection in the whole process.Take out crucible subsequently, the cleaning powder obtains the C/C matrix material that the silicon based ceramic coating is contained on the surface.
The Graphite Powder 99 that takes by weighing 20g is put into plumbago crucible; Make it evenly be laid in crucible bottom; To obtain the surface again and contain the top that is suspended on the powder surface after the C/C matrix material of silicon based ceramic coating bundlees with a branch of 3K thomel, then plumbago crucible put into the vacuum reaction stove.After vacuumizing 30min vacuum tightness is reached-0.09MPa, the empty 30min of fidelity observes vacuum meter and indicates whether to change, and like no change, the illustrative system sealing is intact.Logical argon gas is to normal pressure.This process triplicate.Afterwards furnace temperature is risen to 1800 ° of C, temperature rise rate is 10 ° of C/min, is incubated 1h then.Powered-down naturally cools to room temperature subsequently, logical argon shield in the whole process.Take out plumbago crucible subsequently, clear up the surface and contain the thomel on the C/C matrix material of silicon based ceramic coating, obtain a large amount of Al doped SIC nano wire in surface.
Among all embodiment, the purity of Si powder is 99.5%, granularity is 300 orders, and the purity of C powder is 99%, granularity is 320 orders, Al
2O
3The purity of powder is that analytical pure, granularity are 100～200 orders, and the purity of Graphite Powder 99 is 98%, granularity is 400 orders.
Claims (7)
1. method for preparing the adulterated silicon carbide nanometer line of Al is characterized in that step is following:
Step 1: with mass percent is 70～85% Si powder, 5～15% SiC powder, 7～15% C powder and 3～10% Al
2O
3Powder places the rosin ball grinder, carries out ball mill mixing and handles 2～4h, obtains blended embedding powder;
Step 2: the semi-homogeneous of embedding powder of preparation is paved with the plumbago crucible bottom, puts into the C/C matrix material again, put into 1/4 embedding powder again the C/C matrix material is covered; After need passing through sanding and polishing, cleans in said C/C matrix material, and oven dry;
Step 3: plumbago crucible is put into the vertical vacuum furnace that graphite is heating element, vacuum oven is carried out vacuum-treat after, logical Ar gas rises to 2000～2200 ° Cs with furnace temperature from room temperature with 5～10 ° of C/min heat-up rates to normal pressure, insulation 1～3h; Powered-down naturally cools to room temperature subsequently, the C/C matrix material that has the silicon based ceramic coating that obtains; Logical argon shield in the whole process;
Step 4: in the plumbago crucible bottom, a branch of 3k thomel binding of the C/C composite material by adopting that has the silicon based ceramic coating that again step 3 is obtained is suspended on the Graphite Powder 99 top in the crucible then with the even bedding of Graphite Powder 99;
Step 5: plumbago crucible is put into the vertical vacuum furnace that graphite is heating element, vacuum oven is carried out vacuum-treat after, logical Ar rises to 1600～1800 ° Cs with furnace temperature from room temperature with 5～10 ° of C/min heat-up rates to normal pressure, insulation 1～3h; Powered-down naturally cools to room temperature subsequently; Logical Ar protection in the whole process;
Step 6: take out plumbago crucible subsequently, clear up the surface and contain the thomel on the C/C matrix material of silicon based ceramic coating, obtain the Al doped SIC nano wire on surface.
2. according to the said method for preparing the adulterated silicon carbide nanometer line of Al of claim 1; It is characterized in that: the vacuum-treat in said step 3 and the step 5 is: vacuumize and make vacuum tightness reach-0.09MPa; More than the empty 30min of fidelity, proof system seals intact end when the vacuum tightness no change then.
3. according to the said method for preparing the adulterated silicon carbide nanometer line of Al of claim 1, it is characterized in that: the purity of said Si powder is 99.5%, granularity is 300 orders.
4. according to the said method for preparing the adulterated silicon carbide nanometer line of Al of claim 1, it is characterized in that: the purity of said C powder is 99%, granularity is 320 orders.
5. according to the said method for preparing the adulterated silicon carbide nanometer line of Al of claim 1, it is characterized in that: the purity of said SiC powder is 98.5%, granularity is 300 orders.
6. according to the said method for preparing the adulterated silicon carbide nanometer line of Al of claim 1, it is characterized in that: said Al
2O
3The purity of powder is that analytical pure, granularity are 100～200 orders.
7. according to the said method for preparing the adulterated silicon carbide nanometer line of Al of claim 1, it is characterized in that: the purity of said Graphite Powder 99 is 98%, granularity is 400 orders.
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Cited By (6)
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| CN103073334A (en) * | 2013-01-21 | 2013-05-01 | 西北工业大学 | Preparation method for ultralong nanowire toughed ceramic coating |
| CN103214268A (en) * | 2013-03-28 | 2013-07-24 | 西北工业大学 | Preparation method of nano-wire reinforced SiC wear-resistant coating |
| CN103553044A (en) * | 2013-10-12 | 2014-02-05 | 台州市一能科技有限公司 | Preparation method of high-purity silicon carbide |
| CN104445202A (en) * | 2014-11-25 | 2015-03-25 | 德清州晶新材料科技有限公司 | High-purity aluminum-doped silicon carbide powder and synthetic method thereof |
| CN105088346A (en) * | 2015-08-19 | 2015-11-25 | 宁波工程学院 | P-doped SiC nanowire with ultrahigh length-diameter ratio and preparation method thereof |
| CN110606747A (en) * | 2019-10-16 | 2019-12-24 | 西北工业大学 | Preparation method of isotropic ceramic nanowire preform |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445554A (en) * | 1966-03-11 | 1969-05-20 | Dow Corning | Manufacture of silicon carbide ribbons |
| CN102126859A (en) * | 2011-03-03 | 2011-07-20 | 西北工业大学 | Method for preparing bamboo-shaped SiC nanowire-toughened HfC ceramic |
| CN102491332A (en) * | 2011-11-15 | 2012-06-13 | 西北工业大学 | Method for preparing SiC nanobelts on SiC ceramic surface |
| CN102491331A (en) * | 2011-11-15 | 2012-06-13 | 西北工业大学 | Method for preparing SiC nanometre wires and nanometre belts |
-
2012
- 2012-06-21 CN CN2012102063415A patent/CN102701207B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445554A (en) * | 1966-03-11 | 1969-05-20 | Dow Corning | Manufacture of silicon carbide ribbons |
| CN102126859A (en) * | 2011-03-03 | 2011-07-20 | 西北工业大学 | Method for preparing bamboo-shaped SiC nanowire-toughened HfC ceramic |
| CN102491332A (en) * | 2011-11-15 | 2012-06-13 | 西北工业大学 | Method for preparing SiC nanobelts on SiC ceramic surface |
| CN102491331A (en) * | 2011-11-15 | 2012-06-13 | 西北工业大学 | Method for preparing SiC nanometre wires and nanometre belts |
Non-Patent Citations (2)
| Title |
|---|
| 《Journal of Alloys and Compounds》 20100924 Yanhui Chu et al. "Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD" 第L36－L39页 1-7 第508卷, * |
| YANHUI CHU ET AL.: ""Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD"", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
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| CN103073334A (en) * | 2013-01-21 | 2013-05-01 | 西北工业大学 | Preparation method for ultralong nanowire toughed ceramic coating |
| CN103214268A (en) * | 2013-03-28 | 2013-07-24 | 西北工业大学 | Preparation method of nano-wire reinforced SiC wear-resistant coating |
| CN103214268B (en) * | 2013-03-28 | 2014-10-29 | 西北工业大学 | Preparation method of nano-wire reinforced SiC wear-resistant coating |
| CN103553044A (en) * | 2013-10-12 | 2014-02-05 | 台州市一能科技有限公司 | Preparation method of high-purity silicon carbide |
| CN103553044B (en) * | 2013-10-12 | 2015-07-08 | 台州市一能科技有限公司 | Preparation method of high-purity silicon carbide |
| CN104445202A (en) * | 2014-11-25 | 2015-03-25 | 德清州晶新材料科技有限公司 | High-purity aluminum-doped silicon carbide powder and synthetic method thereof |
| CN105088346A (en) * | 2015-08-19 | 2015-11-25 | 宁波工程学院 | P-doped SiC nanowire with ultrahigh length-diameter ratio and preparation method thereof |
| CN110606747A (en) * | 2019-10-16 | 2019-12-24 | 西北工业大学 | Preparation method of isotropic ceramic nanowire preform |
| CN110606747B (en) * | 2019-10-16 | 2021-09-07 | 西北工业大学 | Preparation method of isotropic ceramic nanowire preform |
| US12006265B2 (en) | 2019-10-16 | 2024-06-11 | Northwestern Polytechnical University | Process for the preparation of a ceramic nanowire preform |
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